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BU2630FV BU2630FV Rohm Semiconductor BU2630F.pdf Description: IC FREQ SYNTH 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 80MHz
Type: Frequency Synthesizer
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 16-SSOP-B
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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BU2630F BU2630F Rohm Semiconductor BU2630F.pdf Description: IC DUAL PLL FREQ SYNTH SOP16
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SML-H12D8TT86C SML-H12D8TT86C Rohm Semiconductor datasheet?p=SML-H12D8T(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED ORANGE CLEAR 2012 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Color: Orange
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 63mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 605nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Grade: Automotive
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Qualification: AEC-Q101
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SML-H12D8TT86C SML-H12D8TT86C Rohm Semiconductor datasheet?p=SML-H12D8T(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED ORANGE CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Orange
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 63mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 605nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Grade: Automotive
Qualification: AEC-Q101
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UMP1NFHTR UMP1NFHTR Rohm Semiconductor umn10nfhtr-e.pdf Description: DIODE ARRAY GP 80V 25MA UMD5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 25mA
Supplier Device Package: UMD5
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Qualification: AEC-Q101
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RB051LAM-40TR RB051LAM-40TR Rohm Semiconductor datasheet?p=RB051LAM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 20V 3A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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RB051LAM-40TR RB051LAM-40TR Rohm Semiconductor datasheet?p=RB051LAM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 20V 3A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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RB051MS-2YTR Rohm Semiconductor Description: DIODE SCHOTTKY PMDU
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RB168L-40TFTE25 RB168L-40TFTE25 Rohm Semiconductor datasheet?p=RB168L-40TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 1A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Current - Reverse Leakage @ Vr: 550 nA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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RB168L-40TFTE25 RB168L-40TFTE25 Rohm Semiconductor datasheet?p=RB168L-40TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Current - Reverse Leakage @ Vr: 550 nA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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RBR1L30ADDTE25 RBR1L30ADDTE25 Rohm Semiconductor Description: LOW VF TYPE AUTOMOTIVE SCHOTTKY
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RBR1L30ADDTE25 RBR1L30ADDTE25 Rohm Semiconductor Description: LOW VF TYPE AUTOMOTIVE SCHOTTKY
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RBR1L60ADDTE25 RBR1L60ADDTE25 Rohm Semiconductor datasheet?p=RBR1L60ADD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 1A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 75 µA @ 60 V
Qualification: AEC-Q101
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RBR1L60ADDTE25 RBR1L60ADDTE25 Rohm Semiconductor datasheet?p=RBR1L60ADD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 75 µA @ 60 V
Qualification: AEC-Q101
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RBR3L40CDDTE25 RBR3L40CDDTE25 Rohm Semiconductor rbr3l40cddte25-e.pdf Description: LOW VF TYPE AUTOMOTIVE SCHOTTKY
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RBR3L40CDDTE25 RBR3L40CDDTE25 Rohm Semiconductor rbr3l40cddte25-e.pdf Description: LOW VF TYPE AUTOMOTIVE SCHOTTKY
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RB056L-40TE25 RB056L-40TE25 Rohm Semiconductor Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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RB056L-40TE25 RB056L-40TE25 Rohm Semiconductor Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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RBR5L30BDDTE25 RBR5L30BDDTE25 Rohm Semiconductor datasheet?p=RBR5L30BDD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 5A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Qualification: AEC-Q101
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RBR5L30BDDTE25 RBR5L30BDDTE25 Rohm Semiconductor datasheet?p=RBR5L30BDD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 5A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Qualification: AEC-Q101
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BM2SCQ123T-EVK-001 BM2SCQ123T-EVK-001 Rohm Semiconductor bm2scq123t-evk-001_ug-e.pdf Description: EVAL BOARD FOR BM2SCQ123
Packaging: Bulk
Voltage - Output: 24V
Voltage - Input: 210 ~ 480VAC, 300V ~ 900V
Current - Output: 2A
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: BM2SCQ123
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Power - Output: 48 W
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RB551VM-40FHTE-17 RB551VM-40FHTE-17 Rohm Semiconductor datasheet?p=RB551VM-40FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 200 mA
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Qualification: AEC-Q101
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RB551VM-40TE-17 RB551VM-40TE-17 Rohm Semiconductor datasheet?p=RB551VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 200 mA
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
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SDR03EZPF4021 SDR03EZPF4021 Rohm Semiconductor sdr-e.pdf Description: RES SMD 4.02 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 4.02 kOhms
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SDR03EZPF4021 SDR03EZPF4021 Rohm Semiconductor sdr-e.pdf Description: RES SMD 4.02 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 4.02 kOhms
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SH8K51GZETB SH8K51GZETB Rohm Semiconductor sh8k51gzetb-e Description: 4V DRIVE NCH+NCH MOSFET. SH8K51
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SH8K51GZETB SH8K51GZETB Rohm Semiconductor sh8k51gzetb-e Description: 4V DRIVE NCH+NCH MOSFET. SH8K51
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SH8M51GZETB SH8M51GZETB Rohm Semiconductor sh8m51gzetb-e.pdf Description: 4V DRIVE NCH+PCH MOSFET. SH8M51
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SH8M51GZETB SH8M51GZETB Rohm Semiconductor sh8m51gzetb-e.pdf Description: 4V DRIVE NCH+PCH MOSFET. SH8M51
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R6050JNZ4C13 R6050JNZ4C13 Rohm Semiconductor datasheet?p=R6050JNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 50A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 25A, 15V
Power Dissipation (Max): 615W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5mA
Supplier Device Package: TO-247G
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 100 V
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US6J12TCR US6J12TCR Rohm Semiconductor datasheet?p=US6J12&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 12V 2A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 910mW (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 6V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
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SH8K25GZ0TB SH8K25GZ0TB Rohm Semiconductor sh8k25gz0tb-e Description: 4V DRIVE NCH+NCH MOSFET. A POWER
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SH8K25GZ0TB SH8K25GZ0TB Rohm Semiconductor sh8k25gz0tb-e Description: 4V DRIVE NCH+NCH MOSFET. A POWER
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SH8K26GZ0TB SH8K26GZ0TB Rohm Semiconductor sh8k26gz0tb-e.pdf Description: MOSFET 2N-CH 40V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SH8K26GZ0TB SH8K26GZ0TB Rohm Semiconductor sh8k26gz0tb-e.pdf Description: MOSFET 2N-CH 40V 6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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22+0.80 EUR
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500+0.46 EUR
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SH8K52GZETB SH8K52GZETB Rohm Semiconductor datasheet?p=SH8K52&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 100V 3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
auf Bestellung 7500 Stücke:
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SH8K52GZETB SH8K52GZETB Rohm Semiconductor datasheet?p=SH8K52&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 100V 3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
auf Bestellung 9895 Stücke:
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SH8M24GZETB SH8M24GZETB Rohm Semiconductor sh8m24-e.pdf Description: MOSFET N/P-CH 45V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SH8M24GZETB SH8M24GZETB Rohm Semiconductor sh8m24-e.pdf Description: MOSFET N/P-CH 45V 6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 9108 Stücke:
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SH8K32GZETB SH8K32GZETB Rohm Semiconductor sh8k32-e.pdf Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SH8K32GZETB SH8K32GZETB Rohm Semiconductor sh8k32-e.pdf Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 17490 Stücke:
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SH8K37GZETB SH8K37GZETB Rohm Semiconductor datasheet?p=SH8K37&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 5.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V
Rds On (Max) @ Id, Vgs: 46mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 100µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
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SH8K37GZETB SH8K37GZETB Rohm Semiconductor datasheet?p=SH8K37&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 5.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V
Rds On (Max) @ Id, Vgs: 46mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 100µA
Supplier Device Package: 8-SOP
auf Bestellung 2356 Stücke:
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7+2.59 EUR
10+2.14 EUR
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500+1.44 EUR
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2SD1664T100Q 2SD1664T100Q Rohm Semiconductor 2sd1664%2C1858.pdf Description: TRANS NPN 32V 1A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 150MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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2SD1664T100Q 2SD1664T100Q Rohm Semiconductor 2sd1664%2C1858.pdf Description: TRANS NPN 32V 1A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 150MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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2SD1664T100P 2SD1664T100P Rohm Semiconductor 2sd1664,1858.pdf Description: TRANS NPN 32V 1A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V
Frequency - Transition: 150MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 2 W
auf Bestellung 1000 Stücke:
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2SD1664T100P 2SD1664T100P Rohm Semiconductor 2sd1664,1858.pdf Description: TRANS NPN 32V 1A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V
Frequency - Transition: 150MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 2 W
auf Bestellung 1860 Stücke:
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2SC4102T106S 2SC4102T106S Rohm Semiconductor 2sc3906k-e.pdf Description: TRANS NPN 120V 0.05A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
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2SC4102T106S 2SC4102T106S Rohm Semiconductor 2sc3906k-e.pdf Description: TRANS NPN 120V 0.05A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
auf Bestellung 4054 Stücke:
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BD8388FV-ME2 BD8388FV-ME2 Rohm Semiconductor datasheet?p=BD8388FV-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC LED DRVR LIN PWM 50MA 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 8
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 50mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 16-SSOP-B
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BD8388FV-ME2 BD8388FV-ME2 Rohm Semiconductor datasheet?p=BD8388FV-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC LED DRVR LIN PWM 50MA 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 8
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 50mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 16-SSOP-B
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2344 Stücke:
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BD8389FV-ME2 BD8389FV-ME2 Rohm Semiconductor datasheet?p=BD8389FV-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC LED DRVR LIN PWM 50MA 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 12
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 50mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 20-SSOP-B
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BD8389FV-ME2 BD8389FV-ME2 Rohm Semiconductor datasheet?p=BD8389FV-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC LED DRVR LIN PWM 50MA 20SSOP
Packaging: Cut Tape (CT)
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 12
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 50mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 20-SSOP-B
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 143 Stücke:
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BD8381AEFV-ME2 BD8381AEFV-ME2 Rohm Semiconductor datasheet?p=BD8381AEFV-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC LED DRIVER CTRLR PWM 28HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 300kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 28-HTSSOP-B
Dimming: PWM
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 30V
Grade: Automotive
Produkt ist nicht verfügbar
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BD8381AEFV-ME2 BD8381AEFV-ME2 Rohm Semiconductor datasheet?p=BD8381AEFV-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC LED DRIVER CTRLR PWM 28HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 300kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 28-HTSSOP-B
Dimming: PWM
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 30V
Grade: Automotive
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DA227YFHT2R DA227YFHT2R Rohm Semiconductor datasheet?p=DA227YFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SWITCHING 80V SOT-543 EMD4
Packaging: Tape & Reel (TR)
Package / Case: SC-75-4, SOT-543
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD4
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Produkt ist nicht verfügbar
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CDZFHT2RA30B CDZFHT2RA30B Rohm Semiconductor CDZFH30B.pdf Description: DIODE ZENER 30V 100MW VMN2
Packaging: Tape & Reel (TR)
Tolerance: ±2.5%
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: VMN2 (SOD-923)
Grade: Automotive
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CDZFHT2RA30B CDZFHT2RA30B Rohm Semiconductor CDZFH30B.pdf Description: DIODE ZENER 30V 100MW VMN2
Packaging: Cut Tape (CT)
Tolerance: ±2.5%
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: VMN2 (SOD-923)
Grade: Automotive
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
auf Bestellung 7750 Stücke:
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24+0.76 EUR
33+0.55 EUR
100+0.28 EUR
500+0.24 EUR
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2000+0.17 EUR
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IMN11T110 IMN11T110 Rohm Semiconductor datasheet?p=IMN11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 80V 100MA SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SMT6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.30 EUR
Mindestbestellmenge: 3000
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IMN11T110 IMN11T110 Rohm Semiconductor datasheet?p=IMN11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 80V 100MA SMT6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SMT6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
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BU2630FV BU2630F.pdf
BU2630FV
Hersteller: Rohm Semiconductor
Description: IC FREQ SYNTH 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 80MHz
Type: Frequency Synthesizer
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 16-SSOP-B
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BU2630F BU2630F.pdf
BU2630F
Hersteller: Rohm Semiconductor
Description: IC DUAL PLL FREQ SYNTH SOP16
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SML-H12D8TT86C datasheet?p=SML-H12D8T(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML-H12D8TT86C
Hersteller: Rohm Semiconductor
Description: LED ORANGE CLEAR 2012 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Color: Orange
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 63mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 605nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Grade: Automotive
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Qualification: AEC-Q101
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SML-H12D8TT86C datasheet?p=SML-H12D8T(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML-H12D8TT86C
Hersteller: Rohm Semiconductor
Description: LED ORANGE CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Orange
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 63mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 605nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Grade: Automotive
Qualification: AEC-Q101
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UMP1NFHTR umn10nfhtr-e.pdf
UMP1NFHTR
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 25MA UMD5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 25mA
Supplier Device Package: UMD5
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RB051LAM-40TR datasheet?p=RB051LAM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB051LAM-40TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 3A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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6000+0.17 EUR
9000+0.16 EUR
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RB051LAM-40TR datasheet?p=RB051LAM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB051LAM-40TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 3A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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RB051MS-2YTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY PMDU
Produkt ist nicht verfügbar
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RB168L-40TFTE25 datasheet?p=RB168L-40TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168L-40TFTE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 1A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Current - Reverse Leakage @ Vr: 550 nA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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RB168L-40TFTE25 datasheet?p=RB168L-40TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168L-40TFTE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Current - Reverse Leakage @ Vr: 550 nA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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16+1.14 EUR
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RBR1L30ADDTE25
RBR1L30ADDTE25
Hersteller: Rohm Semiconductor
Description: LOW VF TYPE AUTOMOTIVE SCHOTTKY
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RBR1L30ADDTE25
RBR1L30ADDTE25
Hersteller: Rohm Semiconductor
Description: LOW VF TYPE AUTOMOTIVE SCHOTTKY
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RBR1L60ADDTE25 datasheet?p=RBR1L60ADD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR1L60ADDTE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 1A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 75 µA @ 60 V
Qualification: AEC-Q101
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RBR1L60ADDTE25 datasheet?p=RBR1L60ADD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR1L60ADDTE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 75 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 1111 Stücke:
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17+1.04 EUR
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RBR3L40CDDTE25 rbr3l40cddte25-e.pdf
RBR3L40CDDTE25
Hersteller: Rohm Semiconductor
Description: LOW VF TYPE AUTOMOTIVE SCHOTTKY
Produkt ist nicht verfügbar
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RBR3L40CDDTE25 rbr3l40cddte25-e.pdf
RBR3L40CDDTE25
Hersteller: Rohm Semiconductor
Description: LOW VF TYPE AUTOMOTIVE SCHOTTKY
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RB056L-40TE25
RB056L-40TE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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1500+0.21 EUR
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RB056L-40TE25
RB056L-40TE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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25+0.72 EUR
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RBR5L30BDDTE25 datasheet?p=RBR5L30BDD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR5L30BDDTE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 5A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Qualification: AEC-Q101
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1500+0.41 EUR
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RBR5L30BDDTE25 datasheet?p=RBR5L30BDD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR5L30BDDTE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 5A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Qualification: AEC-Q101
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20+0.88 EUR
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BM2SCQ123T-EVK-001 bm2scq123t-evk-001_ug-e.pdf
BM2SCQ123T-EVK-001
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BM2SCQ123
Packaging: Bulk
Voltage - Output: 24V
Voltage - Input: 210 ~ 480VAC, 300V ~ 900V
Current - Output: 2A
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: BM2SCQ123
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Power - Output: 48 W
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RB551VM-40FHTE-17 datasheet?p=RB551VM-40FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB551VM-40FHTE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 200 mA
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RB551VM-40TE-17 datasheet?p=RB551VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB551VM-40TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 200 mA
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Produkt ist nicht verfügbar
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SDR03EZPF4021 sdr-e.pdf
SDR03EZPF4021
Hersteller: Rohm Semiconductor
Description: RES SMD 4.02 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 4.02 kOhms
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SDR03EZPF4021 sdr-e.pdf
SDR03EZPF4021
Hersteller: Rohm Semiconductor
Description: RES SMD 4.02 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 4.02 kOhms
auf Bestellung 7909 Stücke:
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63+0.28 EUR
75+0.24 EUR
192+0.09 EUR
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SH8K51GZETB sh8k51gzetb-e
SH8K51GZETB
Hersteller: Rohm Semiconductor
Description: 4V DRIVE NCH+NCH MOSFET. SH8K51
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SH8K51GZETB sh8k51gzetb-e
SH8K51GZETB
Hersteller: Rohm Semiconductor
Description: 4V DRIVE NCH+NCH MOSFET. SH8K51
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SH8M51GZETB sh8m51gzetb-e.pdf
SH8M51GZETB
Hersteller: Rohm Semiconductor
Description: 4V DRIVE NCH+PCH MOSFET. SH8M51
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SH8M51GZETB sh8m51gzetb-e.pdf
SH8M51GZETB
Hersteller: Rohm Semiconductor
Description: 4V DRIVE NCH+PCH MOSFET. SH8M51
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R6050JNZ4C13 datasheet?p=R6050JNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6050JNZ4C13
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 50A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 25A, 15V
Power Dissipation (Max): 615W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5mA
Supplier Device Package: TO-247G
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 100 V
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1+25.34 EUR
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US6J12TCR datasheet?p=US6J12&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
US6J12TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 12V 2A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 910mW (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 6V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
auf Bestellung 2738 Stücke:
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Anzahl Preis
11+1.65 EUR
18+1.03 EUR
100+0.67 EUR
500+0.52 EUR
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SH8K25GZ0TB sh8k25gz0tb-e
SH8K25GZ0TB
Hersteller: Rohm Semiconductor
Description: 4V DRIVE NCH+NCH MOSFET. A POWER
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SH8K25GZ0TB sh8k25gz0tb-e
SH8K25GZ0TB
Hersteller: Rohm Semiconductor
Description: 4V DRIVE NCH+NCH MOSFET. A POWER
auf Bestellung 2431 Stücke:
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SH8K26GZ0TB sh8k26gz0tb-e.pdf
SH8K26GZ0TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
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SH8K26GZ0TB sh8k26gz0tb-e.pdf
SH8K26GZ0TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 1651 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
22+0.80 EUR
100+0.56 EUR
500+0.46 EUR
1000+0.43 EUR
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SH8K52GZETB datasheet?p=SH8K52&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8K52GZETB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 100V 3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
auf Bestellung 7500 Stücke:
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Anzahl Preis
2500+0.81 EUR
5000+0.77 EUR
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SH8K52GZETB datasheet?p=SH8K52&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8K52GZETB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 100V 3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
auf Bestellung 9895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.95 EUR
12+1.60 EUR
100+1.24 EUR
500+1.05 EUR
1000+0.86 EUR
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SH8M24GZETB sh8m24-e.pdf
SH8M24GZETB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 5000 Stücke:
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Anzahl Preis
2500+0.85 EUR
5000+0.81 EUR
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SH8M24GZETB sh8m24-e.pdf
SH8M24GZETB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 9108 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
11+1.69 EUR
100+1.31 EUR
500+1.11 EUR
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SH8K32GZETB sh8k32-e.pdf
SH8K32GZETB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 15000 Stücke:
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Anzahl Preis
2500+1.13 EUR
5000+1.09 EUR
12500+1.06 EUR
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SH8K32GZETB sh8k32-e.pdf
SH8K32GZETB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 17490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
10+2.09 EUR
100+1.66 EUR
500+1.41 EUR
1000+1.19 EUR
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SH8K37GZETB datasheet?p=SH8K37&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8K37GZETB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 5.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V
Rds On (Max) @ Id, Vgs: 46mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 100µA
Supplier Device Package: 8-SOP
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SH8K37GZETB datasheet?p=SH8K37&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8K37GZETB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 5.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V
Rds On (Max) @ Id, Vgs: 46mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 100µA
Supplier Device Package: 8-SOP
auf Bestellung 2356 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
10+2.14 EUR
100+1.71 EUR
500+1.44 EUR
1000+1.23 EUR
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2SD1664T100Q 2sd1664%2C1858.pdf
2SD1664T100Q
Hersteller: Rohm Semiconductor
Description: TRANS NPN 32V 1A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 150MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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2SD1664T100Q 2sd1664%2C1858.pdf
2SD1664T100Q
Hersteller: Rohm Semiconductor
Description: TRANS NPN 32V 1A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 150MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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2SD1664T100P 2sd1664,1858.pdf
2SD1664T100P
Hersteller: Rohm Semiconductor
Description: TRANS NPN 32V 1A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V
Frequency - Transition: 150MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 2 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.31 EUR
Mindestbestellmenge: 1000
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2SD1664T100P 2sd1664,1858.pdf
2SD1664T100P
Hersteller: Rohm Semiconductor
Description: TRANS NPN 32V 1A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V
Frequency - Transition: 150MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 2 W
auf Bestellung 1860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
25+0.71 EUR
100+0.45 EUR
500+0.35 EUR
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2SC4102T106S 2sc3906k-e.pdf
2SC4102T106S
Hersteller: Rohm Semiconductor
Description: TRANS NPN 120V 0.05A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.20 EUR
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2SC4102T106S 2sc3906k-e.pdf
2SC4102T106S
Hersteller: Rohm Semiconductor
Description: TRANS NPN 120V 0.05A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
auf Bestellung 4054 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.90 EUR
32+0.55 EUR
100+0.35 EUR
500+0.27 EUR
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BD8388FV-ME2 datasheet?p=BD8388FV-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD8388FV-ME2
Hersteller: Rohm Semiconductor
Description: IC LED DRVR LIN PWM 50MA 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 8
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 50mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 16-SSOP-B
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BD8388FV-ME2 datasheet?p=BD8388FV-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD8388FV-ME2
Hersteller: Rohm Semiconductor
Description: IC LED DRVR LIN PWM 50MA 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 8
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 50mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 16-SSOP-B
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2344 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.33 EUR
10+2.07 EUR
25+1.74 EUR
100+1.37 EUR
250+1.18 EUR
500+1.07 EUR
1000+0.98 EUR
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BD8389FV-ME2 datasheet?p=BD8389FV-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD8389FV-ME2
Hersteller: Rohm Semiconductor
Description: IC LED DRVR LIN PWM 50MA 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 12
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 50mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 20-SSOP-B
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BD8389FV-ME2 datasheet?p=BD8389FV-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD8389FV-ME2
Hersteller: Rohm Semiconductor
Description: IC LED DRVR LIN PWM 50MA 20SSOP
Packaging: Cut Tape (CT)
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 12
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 50mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 20-SSOP-B
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 143 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.76 EUR
10+2.48 EUR
25+2.34 EUR
100+1.99 EUR
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BD8381AEFV-ME2 datasheet?p=BD8381AEFV-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD8381AEFV-ME2
Hersteller: Rohm Semiconductor
Description: IC LED DRIVER CTRLR PWM 28HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 300kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 28-HTSSOP-B
Dimming: PWM
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 30V
Grade: Automotive
Produkt ist nicht verfügbar
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BD8381AEFV-ME2 datasheet?p=BD8381AEFV-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD8381AEFV-ME2
Hersteller: Rohm Semiconductor
Description: IC LED DRIVER CTRLR PWM 28HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 300kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 28-HTSSOP-B
Dimming: PWM
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 30V
Grade: Automotive
auf Bestellung 81 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.18 EUR
10+7.40 EUR
25+6.42 EUR
Mindestbestellmenge: 2
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DA227YFHT2R datasheet?p=DA227YFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DA227YFHT2R
Hersteller: Rohm Semiconductor
Description: DIODE SWITCHING 80V SOT-543 EMD4
Packaging: Tape & Reel (TR)
Package / Case: SC-75-4, SOT-543
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD4
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CDZFHT2RA30B CDZFH30B.pdf
CDZFHT2RA30B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 30V 100MW VMN2
Packaging: Tape & Reel (TR)
Tolerance: ±2.5%
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: VMN2 (SOD-923)
Grade: Automotive
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CDZFHT2RA30B CDZFH30B.pdf
CDZFHT2RA30B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 30V 100MW VMN2
Packaging: Cut Tape (CT)
Tolerance: ±2.5%
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: VMN2 (SOD-923)
Grade: Automotive
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
auf Bestellung 7750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
33+0.55 EUR
100+0.28 EUR
500+0.24 EUR
1000+0.19 EUR
2000+0.17 EUR
Mindestbestellmenge: 24
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IMN11T110 datasheet?p=IMN11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
IMN11T110
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SMT6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.30 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IMN11T110 datasheet?p=IMN11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
IMN11T110
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA SMT6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SMT6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
auf Bestellung 3850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
23+0.80 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
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