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RD3L080SNFRATL RD3L080SNFRATL Rohm Semiconductor Description: MOSFET N-CH 60V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
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500+1.37 EUR
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BD2222G-GTR BD2222G-GTR Rohm Semiconductor datasheet?p=BD2222G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1CH ADJUSTABLE CURRENT LIMIT HIG
Features: Load Discharge
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 89mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-SSOP
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, Short Circuit, UVLO
Part Status: Active
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BD2222G-GTR BD2222G-GTR Rohm Semiconductor datasheet?p=BD2222G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1CH ADJUSTABLE CURRENT LIMIT HIG
Features: Load Discharge
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 89mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-SSOP
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, Short Circuit, UVLO
Part Status: Active
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RB550VM-30TE-17 RB550VM-30TE-17 Rohm Semiconductor datasheet?p=RB550VM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 500MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Current - Reverse Leakage @ Vr: 35 µA @ 30 V
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RB550VM-30TE-17 RB550VM-30TE-17 Rohm Semiconductor datasheet?p=RB550VM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 500MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Current - Reverse Leakage @ Vr: 35 µA @ 30 V
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RB550VM-30FHTE-17 RB550VM-30FHTE-17 Rohm Semiconductor datasheet?p=RB550VM-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 500MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Current - Reverse Leakage @ Vr: 35 µA @ 30 V
Qualification: AEC-Q101
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RB550VM-30FHTE-17 RB550VM-30FHTE-17 Rohm Semiconductor datasheet?p=RB550VM-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 500MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Current - Reverse Leakage @ Vr: 35 µA @ 30 V
Qualification: AEC-Q101
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RB550VM-40TE-17 RB550VM-40TE-17 Rohm Semiconductor datasheet?p=RB550VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
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RB550VM-40TE-17 RB550VM-40TE-17 Rohm Semiconductor datasheet?p=RB550VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Produkt ist nicht verfügbar
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RBR30T60ANZC9 RBR30T60ANZC9 Rohm Semiconductor datasheet?p=RBR30T60ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 60V 15A TO220FN
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Produkt ist nicht verfügbar
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BD3539NUX-TR BD3539NUX-TR Rohm Semiconductor datasheet?p=BD3539NUX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG CONV DDR SDRAM 1OUT 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Voltage - Output: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 2.7V ~ 5.5V
Operating Temperature: -30°C ~ 100°C
Applications: Converter, DDR SDRAM
Supplier Device Package: VSON008X2030
Part Status: Active
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BD2206G-TR BD2206G-TR Rohm Semiconductor datasheet?p=BD2206G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC LOAD SWITCH 0.5A SSOP5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 5-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
Part Status: Not For New Designs
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DTA144WCAT116 DTA144WCAT116 Rohm Semiconductor datasheet?p=DTA144WCA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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RB540VM-40TE-17 RB540VM-40TE-17 Rohm Semiconductor datasheet?p=RB540VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 40 V
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RB540VM-40TE-17 RB540VM-40TE-17 Rohm Semiconductor datasheet?p=RB540VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 40 V
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RB510VM-40TE-17 RB510VM-40TE-17 Rohm Semiconductor rb510vm-40te-17-e.pdf Description: 40V, 100MA, SOD-323FL, SCHOTTKY
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RB510VM-40TE-17 RB510VM-40TE-17 Rohm Semiconductor rb510vm-40te-17-e.pdf Description: 40V, 100MA, SOD-323FL, SCHOTTKY
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RS1P600BHTB1 RS1P600BHTB1 Rohm Semiconductor rs1p600bhtb1-e.pdf Description: NCH 100V 60A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 50 V
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SCT2080KEGC11 SCT2080KEGC11 Rohm Semiconductor datasheet?p=SCT2080KE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 1200V 40A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V
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FMW2T148 Rohm Semiconductor Description: TRANS GP NPN 50V 5 PIN
Produkt ist nicht verfügbar
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MCR03EZPFX1021 MCR03EZPFX1021 Rohm Semiconductor mcr-e.pdf Description: RES SMD 1.02K OHM 1% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 1.02 kOhms
Produkt ist nicht verfügbar
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SML-822MV8WT86 SML-822MV8WT86 Rohm Semiconductor datasheet?p=SML-822MV8W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED RED/YLW-GRN 1305 SMD
Packaging: Cut Tape (CT)
Package / Case: 1305 (3412 Metric)
Color: Red, Yellow-Green
Size / Dimension: 3.40mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 30mcd Red, 25mcd Yellow-Green
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.2V Red, 2.2V Yellow-Green
Current - Test: 20mA Red, 20mA Yellow-Green
Height (Max): 1.20mm
Wavelength - Dominant: 630nm Red, 572nm Yellow-Green
Supplier Device Package: 1305
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.25mm x 1.20mm
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RPR-220W1 Rohm Semiconductor Description: RPR-220W1
Packaging: Bulk
Part Status: Last Time Buy
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RPR-220S013 Rohm Semiconductor Description: RPR-220S013
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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RPR-220UC30NF Rohm Semiconductor Description: RPR-220UC30NF
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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RB706D-40FHT146 RB706D-40FHT146 Rohm Semiconductor rb706d-40fht146-e Description: DIODE ARRAY SCHOTT 40V 30MA SMD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30mA
Supplier Device Package: SMD3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Produkt ist nicht verfügbar
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RB706D-40FHT146 RB706D-40FHT146 Rohm Semiconductor rb706d-40fht146-e Description: DIODE ARRAY SCHOTT 40V 30MA SMD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30mA
Supplier Device Package: SMD3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
auf Bestellung 375 Stücke:
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BU33UV7NUX-EVK-101 BU33UV7NUX-EVK-101 Rohm Semiconductor datasheet?p=BU33UV7NUX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: EVAL BOARD FOR BU33UV7
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 0.6V ~ 4.5V
Current - Output: 500mA
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: BU33UV7
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up
Outputs and Type: 1, Non-Isolated
Part Status: Active
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BR24G02FJ-3GTE2 BR24G02FJ-3GTE2 Rohm Semiconductor br24g02-3-e.pdf Description: IC EEPROM 2KBIT I2C 400KHZ 8SOPJ
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BR24G02FJ-3GTE2 BR24G02FJ-3GTE2 Rohm Semiconductor br24g02-3-e.pdf Description: IC EEPROM 2KBIT I2C 400KHZ 8SOPJ
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BSS84WT106 BSS84WT106 Rohm Semiconductor datasheet?p=BSS84W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PCH -60V -0.21A, SOT-323, SMALL
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 210mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
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BSS84WT106 BSS84WT106 Rohm Semiconductor datasheet?p=BSS84W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PCH -60V -0.21A, SOT-323, SMALL
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 210mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
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SFR18EZPJ200 SFR18EZPJ200 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 20 Ohms
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SFR18EZPJ200 SFR18EZPJ200 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 20 Ohms
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BSS138WT106 BSS138WT106 Rohm Semiconductor datasheet?p=BSS138W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 60V 310MA, SOT-323, SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 310mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 30 V
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BSS138WT106 BSS138WT106 Rohm Semiconductor datasheet?p=BSS138W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 60V 310MA, SOT-323, SMALL SI
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 310mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 30 V
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2SC5658FHAT2LR 2SC5658FHAT2LR Rohm Semiconductor 2sc5658fha-e.pdf Description: TRANS NPN 50V 0.15A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
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CSL1901UW1 CSL1901UW1 Rohm Semiconductor datasheet?p=CSL1901UW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED RED DIFFUSED 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 6mcd
Voltage - Forward (Vf) (Typ): 1.8V
Lens Color: White
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.10mm x 0.80mm
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CSL1901UW1 CSL1901UW1 Rohm Semiconductor datasheet?p=CSL1901UW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED RED DIFFUSED 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 6mcd
Voltage - Forward (Vf) (Typ): 1.8V
Lens Color: White
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.10mm x 0.80mm
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UMH37NTN UMH37NTN Rohm Semiconductor datasheet?p=UMH37N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN+NPN, SOT-363, DUAL DIGITAL T
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V
Frequency - Transition: 35MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT6
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UMH33NTN UMH33NTN Rohm Semiconductor datasheet?p=UMH33N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN+NPN, SOT-363, DUAL DIGITAL T
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V
Frequency - Transition: 35MHz
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: UMT6
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CDZVT2R24B CDZVT2R24B Rohm Semiconductor cdzvt2r24b-e.pdf Description: DIODE ZENER 24V 100MW VMN2M
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CDZVT2R24B CDZVT2R24B Rohm Semiconductor cdzvt2r24b-e.pdf Description: DIODE ZENER 24V 100MW VMN2M
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500+0.13 EUR
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KDZLVTR75 KDZLVTR75 Rohm Semiconductor kdzlvtr75-e.pdf Description: DIODE ZENER 75V 1W PMDU
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KDZLVTR75 KDZLVTR75 Rohm Semiconductor kdzlvtr75-e.pdf Description: DIODE ZENER 75V 1W PMDU
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PDZVTR8.2B PDZVTR8.2B Rohm Semiconductor pdzvtr8.2b-e.pdf Description: DIODE ZENER 8.75V 1W PMDTM
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PDZVTR8.2B PDZVTR8.2B Rohm Semiconductor pdzvtr8.2b-e.pdf Description: DIODE ZENER 8.75V 1W PMDTM
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KDZLVTR68 KDZLVTR68 Rohm Semiconductor datasheet?p=KDZLV68&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 68V 1W PMDU
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 52 V
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KDZLVTR68 KDZLVTR68 Rohm Semiconductor datasheet?p=KDZLV68&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 68V 1W PMDU
Tolerance: ±5.88%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 52 V
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RD3U080AAFRATL RD3U080AAFRATL Rohm Semiconductor datasheet?p=RD3U080AAFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 250V 8A TO-252, AUTOMOTIVE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
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RD3U080AAFRATL RD3U080AAFRATL Rohm Semiconductor datasheet?p=RD3U080AAFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 250V 8A TO-252, AUTOMOTIVE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
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R6504END3TL1 R6504END3TL1 Rohm Semiconductor datasheet?p=R6504END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 4A TO-252, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
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R6504END3TL1 R6504END3TL1 Rohm Semiconductor datasheet?p=R6504END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 4A TO-252, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
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R5205PND3FRATL R5205PND3FRATL Rohm Semiconductor datasheet?p=R5205PND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 525V 5A TO-252, AUTOMOTIVE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
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R5205PND3FRATL R5205PND3FRATL Rohm Semiconductor datasheet?p=R5205PND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 525V 5A TO-252, AUTOMOTIVE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
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5+4.01 EUR
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2SC4617E3HZGTLQ 2SC4617E3HZGTLQ Rohm Semiconductor 2sc4617e3hzgtlr-e.pdf Description: TRANS NPN 50V 0.15A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
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2SC4617E3HZGTLQ 2SC4617E3HZGTLQ Rohm Semiconductor 2sc4617e3hzgtlr-e.pdf Description: TRANS NPN 50V 0.15A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 2709 Stücke:
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40+0.44 EUR
65+0.27 EUR
104+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
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DTC114EE3HZGTL DTC114EE3HZGTL Rohm Semiconductor datasheet?p=DTC114EE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DTC114EE3HZGTL DTC114EE3HZGTL Rohm Semiconductor datasheet?p=DTC114EE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
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BD4269UEFJ-CE2 BD4269UEFJ-CE2 Rohm Semiconductor datasheet?p=BD4269UEFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 300MA OUTPUT LDO REGULATOR WITH
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 150 µA
auf Bestellung 2264 Stücke:
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RD3L080SNFRATL
RD3L080SNFRATL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
auf Bestellung 4848 Stücke:
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7+2.53 EUR
10+2.08 EUR
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500+1.37 EUR
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BD2222G-GTR datasheet?p=BD2222G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD2222G-GTR
Hersteller: Rohm Semiconductor
Description: 1CH ADJUSTABLE CURRENT LIMIT HIG
Features: Load Discharge
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 89mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-SSOP
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, Short Circuit, UVLO
Part Status: Active
auf Bestellung 9000 Stücke:
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Anzahl Preis
3000+0.44 EUR
6000+0.41 EUR
9000+0.39 EUR
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BD2222G-GTR datasheet?p=BD2222G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD2222G-GTR
Hersteller: Rohm Semiconductor
Description: 1CH ADJUSTABLE CURRENT LIMIT HIG
Features: Load Discharge
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 89mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-SSOP
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, Short Circuit, UVLO
Part Status: Active
auf Bestellung 10026 Stücke:
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10+1.92 EUR
16+1.16 EUR
25+0.97 EUR
100+0.75 EUR
250+0.64 EUR
500+0.57 EUR
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RB550VM-30TE-17 datasheet?p=RB550VM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB550VM-30TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 500MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Current - Reverse Leakage @ Vr: 35 µA @ 30 V
auf Bestellung 69000 Stücke:
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3000+0.08 EUR
6000+0.07 EUR
9000+0.07 EUR
15000+0.07 EUR
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30000+0.06 EUR
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RB550VM-30TE-17 datasheet?p=RB550VM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB550VM-30TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 500MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Current - Reverse Leakage @ Vr: 35 µA @ 30 V
auf Bestellung 76947 Stücke:
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35+0.51 EUR
59+0.30 EUR
100+0.19 EUR
500+0.14 EUR
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RB550VM-30FHTE-17 datasheet?p=RB550VM-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB550VM-30FHTE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 500MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Current - Reverse Leakage @ Vr: 35 µA @ 30 V
Qualification: AEC-Q101
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3000+0.13 EUR
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RB550VM-30FHTE-17 datasheet?p=RB550VM-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB550VM-30FHTE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 500MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Current - Reverse Leakage @ Vr: 35 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 5686 Stücke:
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Anzahl Preis
29+0.62 EUR
47+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
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RB550VM-40TE-17 datasheet?p=RB550VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB550VM-40TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Produkt ist nicht verfügbar
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RB550VM-40TE-17 datasheet?p=RB550VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB550VM-40TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Produkt ist nicht verfügbar
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RBR30T60ANZC9 datasheet?p=RBR30T60ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR30T60ANZC9
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 60V 15A TO220FN
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Produkt ist nicht verfügbar
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BD3539NUX-TR datasheet?p=BD3539NUX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD3539NUX-TR
Hersteller: Rohm Semiconductor
Description: IC REG CONV DDR SDRAM 1OUT 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Voltage - Output: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 2.7V ~ 5.5V
Operating Temperature: -30°C ~ 100°C
Applications: Converter, DDR SDRAM
Supplier Device Package: VSON008X2030
Part Status: Active
auf Bestellung 28000 Stücke:
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Anzahl Preis
4000+0.99 EUR
8000+0.94 EUR
12000+0.90 EUR
Mindestbestellmenge: 4000
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BD2206G-TR datasheet?p=BD2206G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD2206G-TR
Hersteller: Rohm Semiconductor
Description: IC LOAD SWITCH 0.5A SSOP5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 5-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
Part Status: Not For New Designs
auf Bestellung 2365 Stücke:
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Anzahl Preis
8+2.29 EUR
11+1.66 EUR
25+1.51 EUR
100+1.34 EUR
250+1.26 EUR
500+1.21 EUR
1000+1.17 EUR
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DTA144WCAT116 datasheet?p=DTA144WCA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA144WCAT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 2398 Stücke:
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30+0.60 EUR
43+0.41 EUR
100+0.21 EUR
500+0.17 EUR
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RB540VM-40TE-17 datasheet?p=RB540VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB540VM-40TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 40 V
auf Bestellung 3000 Stücke:
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3000+0.09 EUR
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RB540VM-40TE-17 datasheet?p=RB540VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB540VM-40TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 40 V
auf Bestellung 3000 Stücke:
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Anzahl Preis
35+0.51 EUR
54+0.33 EUR
109+0.16 EUR
500+0.14 EUR
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RB510VM-40TE-17 rb510vm-40te-17-e.pdf
RB510VM-40TE-17
Hersteller: Rohm Semiconductor
Description: 40V, 100MA, SOD-323FL, SCHOTTKY
Produkt ist nicht verfügbar
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RB510VM-40TE-17 rb510vm-40te-17-e.pdf
RB510VM-40TE-17
Hersteller: Rohm Semiconductor
Description: 40V, 100MA, SOD-323FL, SCHOTTKY
auf Bestellung 2897 Stücke:
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28+0.65 EUR
37+0.49 EUR
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RS1P600BHTB1 rs1p600bhtb1-e.pdf
RS1P600BHTB1
Hersteller: Rohm Semiconductor
Description: NCH 100V 60A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 50 V
auf Bestellung 2412 Stücke:
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4+5.63 EUR
10+3.91 EUR
100+2.81 EUR
500+2.52 EUR
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SCT2080KEGC11 datasheet?p=SCT2080KE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT2080KEGC11
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 1200V 40A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V
auf Bestellung 1822 Stücke:
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1+44.44 EUR
10+32.40 EUR
450+27.09 EUR
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FMW2T148
Hersteller: Rohm Semiconductor
Description: TRANS GP NPN 50V 5 PIN
Produkt ist nicht verfügbar
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MCR03EZPFX1021 mcr-e.pdf
MCR03EZPFX1021
Hersteller: Rohm Semiconductor
Description: RES SMD 1.02K OHM 1% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 1.02 kOhms
Produkt ist nicht verfügbar
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SML-822MV8WT86 datasheet?p=SML-822MV8W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML-822MV8WT86
Hersteller: Rohm Semiconductor
Description: LED RED/YLW-GRN 1305 SMD
Packaging: Cut Tape (CT)
Package / Case: 1305 (3412 Metric)
Color: Red, Yellow-Green
Size / Dimension: 3.40mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 30mcd Red, 25mcd Yellow-Green
Configuration: Independent
Voltage - Forward (Vf) (Typ): 2.2V Red, 2.2V Yellow-Green
Current - Test: 20mA Red, 20mA Yellow-Green
Height (Max): 1.20mm
Wavelength - Dominant: 630nm Red, 572nm Yellow-Green
Supplier Device Package: 1305
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.25mm x 1.20mm
auf Bestellung 1594 Stücke:
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Anzahl Preis
13+1.44 EUR
21+0.86 EUR
100+0.58 EUR
500+0.46 EUR
1000+0.43 EUR
Mindestbestellmenge: 13
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RPR-220W1
Hersteller: Rohm Semiconductor
Description: RPR-220W1
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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RPR-220S013
Hersteller: Rohm Semiconductor
Description: RPR-220S013
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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RPR-220UC30NF
Hersteller: Rohm Semiconductor
Description: RPR-220UC30NF
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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RB706D-40FHT146 rb706d-40fht146-e
RB706D-40FHT146
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 30MA SMD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30mA
Supplier Device Package: SMD3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Produkt ist nicht verfügbar
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RB706D-40FHT146 rb706d-40fht146-e
RB706D-40FHT146
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 30MA SMD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30mA
Supplier Device Package: SMD3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
auf Bestellung 375 Stücke:
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12+1.53 EUR
19+0.95 EUR
100+0.66 EUR
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BU33UV7NUX-EVK-101 datasheet?p=BU33UV7NUX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU33UV7NUX-EVK-101
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BU33UV7
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 0.6V ~ 4.5V
Current - Output: 500mA
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: BU33UV7
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 1 Stücke:
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Anzahl Preis
1+90.20 EUR
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BR24G02FJ-3GTE2 br24g02-3-e.pdf
BR24G02FJ-3GTE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOPJ
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BR24G02FJ-3GTE2 br24g02-3-e.pdf
BR24G02FJ-3GTE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOPJ
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BSS84WT106 datasheet?p=BSS84W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSS84WT106
Hersteller: Rohm Semiconductor
Description: PCH -60V -0.21A, SOT-323, SMALL
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 210mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
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BSS84WT106 datasheet?p=BSS84W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSS84WT106
Hersteller: Rohm Semiconductor
Description: PCH -60V -0.21A, SOT-323, SMALL
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 210mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
auf Bestellung 265 Stücke:
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32+0.56 EUR
49+0.36 EUR
100+0.23 EUR
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SFR18EZPJ200 sfr-e.pdf
SFR18EZPJ200
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 20 Ohms
auf Bestellung 5000 Stücke:
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Anzahl Preis
5000+0.04 EUR
Mindestbestellmenge: 5000
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SFR18EZPJ200 sfr-e.pdf
SFR18EZPJ200
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 20 Ohms
auf Bestellung 9890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
70+0.25 EUR
132+0.13 EUR
177+0.10 EUR
500+0.06 EUR
1000+0.04 EUR
Mindestbestellmenge: 59
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BSS138WT106 datasheet?p=BSS138W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSS138WT106
Hersteller: Rohm Semiconductor
Description: NCH 60V 310MA, SOT-323, SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 310mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 30 V
auf Bestellung 3000 Stücke:
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3000+0.11 EUR
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BSS138WT106 datasheet?p=BSS138W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSS138WT106
Hersteller: Rohm Semiconductor
Description: NCH 60V 310MA, SOT-323, SMALL SI
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 310mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 30 V
auf Bestellung 3000 Stücke:
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Anzahl Preis
32+0.56 EUR
42+0.43 EUR
100+0.24 EUR
500+0.15 EUR
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2SC5658FHAT2LR 2sc5658fha-e.pdf
2SC5658FHAT2LR
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 0.15A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: VMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 5600 Stücke:
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28+0.63 EUR
40+0.44 EUR
100+0.22 EUR
500+0.20 EUR
1000+0.15 EUR
2000+0.14 EUR
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CSL1901UW1 datasheet?p=CSL1901UW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CSL1901UW1
Hersteller: Rohm Semiconductor
Description: LED RED DIFFUSED 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 6mcd
Voltage - Forward (Vf) (Typ): 1.8V
Lens Color: White
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.10mm x 0.80mm
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CSL1901UW1 datasheet?p=CSL1901UW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CSL1901UW1
Hersteller: Rohm Semiconductor
Description: LED RED DIFFUSED 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 6mcd
Voltage - Forward (Vf) (Typ): 1.8V
Lens Color: White
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.10mm x 0.80mm
auf Bestellung 2786 Stücke:
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Anzahl Preis
31+0.58 EUR
52+0.34 EUR
100+0.22 EUR
500+0.17 EUR
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UMH37NTN datasheet?p=UMH37N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMH37NTN
Hersteller: Rohm Semiconductor
Description: NPN+NPN, SOT-363, DUAL DIGITAL T
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V
Frequency - Transition: 35MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT6
auf Bestellung 2650 Stücke:
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Anzahl Preis
14+1.34 EUR
22+0.83 EUR
100+0.54 EUR
500+0.41 EUR
1000+0.37 EUR
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UMH33NTN datasheet?p=UMH33N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMH33NTN
Hersteller: Rohm Semiconductor
Description: NPN+NPN, SOT-363, DUAL DIGITAL T
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V
Frequency - Transition: 35MHz
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: UMT6
auf Bestellung 2655 Stücke:
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Anzahl Preis
14+1.34 EUR
22+0.83 EUR
100+0.54 EUR
500+0.41 EUR
1000+0.37 EUR
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CDZVT2R24B cdzvt2r24b-e.pdf
CDZVT2R24B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 24V 100MW VMN2M
Produkt ist nicht verfügbar
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CDZVT2R24B cdzvt2r24b-e.pdf
CDZVT2R24B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 24V 100MW VMN2M
auf Bestellung 7588 Stücke:
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Anzahl Preis
40+0.44 EUR
48+0.37 EUR
100+0.20 EUR
500+0.13 EUR
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KDZLVTR75 kdzlvtr75-e.pdf
KDZLVTR75
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 75V 1W PMDU
Produkt ist nicht verfügbar
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KDZLVTR75 kdzlvtr75-e.pdf
KDZLVTR75
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 75V 1W PMDU
auf Bestellung 2745 Stücke:
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Anzahl Preis
21+0.86 EUR
26+0.69 EUR
100+0.47 EUR
500+0.35 EUR
1000+0.26 EUR
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PDZVTR8.2B pdzvtr8.2b-e.pdf
PDZVTR8.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 8.75V 1W PMDTM
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PDZVTR8.2B pdzvtr8.2b-e.pdf
PDZVTR8.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 8.75V 1W PMDTM
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KDZLVTR68 datasheet?p=KDZLV68&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
KDZLVTR68
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 68V 1W PMDU
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 52 V
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KDZLVTR68 datasheet?p=KDZLV68&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
KDZLVTR68
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 68V 1W PMDU
Tolerance: ±5.88%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 52 V
auf Bestellung 2899 Stücke:
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Anzahl Preis
25+0.70 EUR
32+0.55 EUR
100+0.33 EUR
500+0.31 EUR
1000+0.21 EUR
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RD3U080AAFRATL datasheet?p=RD3U080AAFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3U080AAFRATL
Hersteller: Rohm Semiconductor
Description: 250V 8A TO-252, AUTOMOTIVE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
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RD3U080AAFRATL datasheet?p=RD3U080AAFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3U080AAFRATL
Hersteller: Rohm Semiconductor
Description: 250V 8A TO-252, AUTOMOTIVE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
auf Bestellung 1740 Stücke:
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Anzahl Preis
5+3.80 EUR
10+3.42 EUR
100+2.75 EUR
500+2.26 EUR
1000+1.88 EUR
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R6504END3TL1 datasheet?p=R6504END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6504END3TL1
Hersteller: Rohm Semiconductor
Description: 650V 4A TO-252, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Produkt ist nicht verfügbar
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R6504END3TL1 datasheet?p=R6504END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6504END3TL1
Hersteller: Rohm Semiconductor
Description: 650V 4A TO-252, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
auf Bestellung 1246 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.15 EUR
10+1.96 EUR
100+1.45 EUR
500+1.23 EUR
1000+1.13 EUR
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R5205PND3FRATL datasheet?p=R5205PND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R5205PND3FRATL
Hersteller: Rohm Semiconductor
Description: 525V 5A TO-252, AUTOMOTIVE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+1.84 EUR
Mindestbestellmenge: 2500
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R5205PND3FRATL datasheet?p=R5205PND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R5205PND3FRATL
Hersteller: Rohm Semiconductor
Description: 525V 5A TO-252, AUTOMOTIVE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.01 EUR
10+3.60 EUR
100+2.90 EUR
500+2.38 EUR
1000+1.97 EUR
Mindestbestellmenge: 5
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2SC4617E3HZGTLQ 2sc4617e3hzgtlr-e.pdf
2SC4617E3HZGTLQ
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 0.15A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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2SC4617E3HZGTLQ 2sc4617e3hzgtlr-e.pdf
2SC4617E3HZGTLQ
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 0.15A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 2709 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
65+0.27 EUR
104+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 40
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DTC114EE3HZGTL datasheet?p=DTC114EE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC114EE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DTC114EE3HZGTL datasheet?p=DTC114EE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC114EE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 823 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
49+0.36 EUR
100+0.23 EUR
500+0.17 EUR
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BD4269UEFJ-CE2 datasheet?p=BD4269UEFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD4269UEFJ-CE2
Hersteller: Rohm Semiconductor
Description: 300MA OUTPUT LDO REGULATOR WITH
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 150 µA
auf Bestellung 2264 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
10+2.33 EUR
25+2.20 EUR
100+1.87 EUR
250+1.76 EUR
500+1.54 EUR
1000+1.27 EUR
Mindestbestellmenge: 7
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