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R6511KNJTL R6511KNJTL Rohm Semiconductor datasheet?p=R6511KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 11A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
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R6511KNJTL R6511KNJTL Rohm Semiconductor datasheet?p=R6511KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 11A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
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R6511END3TL1 R6511END3TL1 Rohm Semiconductor datasheet?p=R6511END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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R6511END3TL1 R6511END3TL1 Rohm Semiconductor datasheet?p=R6511END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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BZX84C33VLYFHT116 BZX84C33VLYFHT116 Rohm Semiconductor datasheet?p=BZX84C33VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 33V 250MW SOT23
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
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BZX84C33VLYFHT116 BZX84C33VLYFHT116 Rohm Semiconductor datasheet?p=BZX84C33VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 33V 250MW SOT23
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
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RQ5H025TNTL RQ5H025TNTL Rohm Semiconductor datasheet?p=RQ5H025TN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
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RQ5H025TNTL RQ5H025TNTL Rohm Semiconductor datasheet?p=RQ5H025TN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
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2SAR512RHZGTL 2SAR512RHZGTL Rohm Semiconductor 2sar512rhzgtl-e.pdf Description: TRANS PNP 30V 2A TSMT3
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2SAR512RHZGTL 2SAR512RHZGTL Rohm Semiconductor 2sar512rhzgtl-e.pdf Description: TRANS PNP 30V 2A TSMT3
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RB061QS-20T18R RB061QS-20T18R Rohm Semiconductor datasheet?p=RB061QS-20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 20V 2A SMD1006
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMD1006
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 10 V
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RB061QS-20T18R RB061QS-20T18R Rohm Semiconductor datasheet?p=RB061QS-20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 20V 2A SMD1006
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMD1006
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 10 V
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ML610Q172-101GAZWAX Rohm Semiconductor ML610Q172-73_12-7-17.pdf Description: IC
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BD5423MUV-E2 BD5423MUV-E2 Rohm Semiconductor Description: IC AMP D STEREO 17W VQFN048V7070
Features: Depop, Mute, Short-Circuit and Thermal Protection
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 10V ~ 16.5V
Max Output Power x Channels @ Load: 17W x 2 @ 4Ohm
Supplier Device Package: VQFN048V7070
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BDE1204G-TR BDE1204G-TR Rohm Semiconductor BDE1204G.pdf Description: THERMOSTAT 120DEGC ACT LOW 5SSOP
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BDE1250G-TR BDE1250G-TR Rohm Semiconductor Description: THERMOSTAT 125DEGC ACT LOW 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Open Drain
Mounting Type: Surface Mount
Output: Active Low
Accuracy: ±4°C
Operating Temperature: -30°C ~ 130°C
Current - Supply: 16µA
Switching Temperature: 125°C
Current - Output (Max): 5mA
Supplier Device Package: 5-SSOP
Output Function: /OverTemp, VTemp
Trip Temperature Threshold: Hot
Selectable Hysteresis: No
Part Status: Obsolete
Voltage - Supply: 2.9 V ~ 5.5 V
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BDE1000G-TR BDE1000G-TR Rohm Semiconductor Description: THERMOSTAT 100DEGC ACT LOW 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Open Drain
Mounting Type: Surface Mount
Output: Active Low
Accuracy: ±4°C
Operating Temperature: -30°C ~ 130°C
Current - Supply: 16µA
Switching Temperature: 100°C
Current - Output (Max): 5mA
Supplier Device Package: 5-SSOP
Output Function: /OverTemp, VTemp
Trip Temperature Threshold: Hot
Selectable Hysteresis: No
Voltage - Supply: 2.9 V ~ 5.5 V
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SMF17VTFTR SMF17VTFTR Rohm Semiconductor datasheet?p=SMF17VTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANSIENT VOLTAGE SUPPRESSOR (AE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
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SMF17VTFTR SMF17VTFTR Rohm Semiconductor datasheet?p=SMF17VTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANSIENT VOLTAGE SUPPRESSOR (AE
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
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500+0.53 EUR
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RB098BM100FHTL RB098BM100FHTL Rohm Semiconductor datasheet?p=RB098BM100FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOT 100V 6A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11.4 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Qualification: AEC-Q101
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RB098BM100FHTL RB098BM100FHTL Rohm Semiconductor datasheet?p=RB098BM100FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOT 100V 6A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11.4 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Qualification: AEC-Q101
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BD7683FJ-LBE2 BD7683FJ-LBE2 Rohm Semiconductor datasheet?p=BD7683FJ-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OFFLINE SWITCH FLYBACK 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 120kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting, Over Load, Over Voltage
Voltage - Start Up: 19.5 V
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BD7683FJ-LBE2 BD7683FJ-LBE2 Rohm Semiconductor datasheet?p=BD7683FJ-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OFFLINE SWITCH FLYBACK 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 120kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting, Over Load, Over Voltage
Voltage - Start Up: 19.5 V
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BD7683FJ-LBE2 BD7683FJ-LBE2 Rohm Semiconductor datasheet?p=BD7683FJ-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OFFLINE SWITCH FLYBACK 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 120kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting, Over Load, Over Voltage
Voltage - Start Up: 19.5 V
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BD7685FJ-LBE2 BD7685FJ-LBE2 Rohm Semiconductor datasheet?p=BD7685FJ-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OFFLINE SWITCH QUASI RES CTRL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz ~ 120kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: 8-SOP-J
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 19.5 V
Control Features: Frequency Control, Soft Start
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BD7685FJ-LBE2 BD7685FJ-LBE2 Rohm Semiconductor datasheet?p=BD7685FJ-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OFFLINE SWITCH QUASI RES CTRL
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz ~ 120kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: 8-SOP-J
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 19.5 V
Control Features: Frequency Control, Soft Start
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RB500SM-30T2R RB500SM-30T2R Rohm Semiconductor datasheet?p=RB500SM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 100MA EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
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RB500SM-30T2R RB500SM-30T2R Rohm Semiconductor datasheet?p=RB500SM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 100MA EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
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BR93G66NUX-3BTTR BR93G66NUX-3BTTR Rohm Semiconductor datasheet?p=BR93G66NUX-3B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 4KBIT VSON008X2030
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: VSON008X2030
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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BR93G66NUX-3BTTR BR93G66NUX-3BTTR Rohm Semiconductor datasheet?p=BR93G66NUX-3B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 4KBIT VSON008X2030
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: VSON008X2030
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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BR93G46NUX-3TTR BR93G46NUX-3TTR Rohm Semiconductor datasheet?p=BR93G46NUX-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 1KBIT VSON008X2030
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: VSON008X2030
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 64 x 16
DigiKey Programmable: Not Verified
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BR93G46NUX-3TTR BR93G46NUX-3TTR Rohm Semiconductor datasheet?p=BR93G46NUX-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 1KBIT VSON008X2030
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: VSON008X2030
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 64 x 16
DigiKey Programmable: Not Verified
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ML610Q112-013TCZ07GL Rohm Semiconductor Description: IC
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UCR01MVPFSR075 UCR01MVPFSR075 Rohm Semiconductor ucr-e.pdf Description: RES 0.075 OHM 1% 1/8W 0402
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.039" L x 0.022" W (1.00mm x 0.55mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.017" (0.42mm)
Part Status: Active
Resistance: 75 mOhms
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UCR01MVPFSR075 UCR01MVPFSR075 Rohm Semiconductor ucr-e.pdf Description: RES 0.075 OHM 1% 1/8W 0402
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.039" L x 0.022" W (1.00mm x 0.55mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.017" (0.42mm)
Part Status: Active
Resistance: 75 mOhms
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UCR01MVPFLR240 UCR01MVPFLR240 Rohm Semiconductor ucr-e.pdf Description: RES 0.24 OHM 1% 1/8W 0402
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.039" L x 0.022" W (1.00mm x 0.55mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.017" (0.42mm)
Part Status: Active
Resistance: 240 mOhms
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UCR01MVPFLR240 UCR01MVPFLR240 Rohm Semiconductor ucr-e.pdf Description: RES 0.24 OHM 1% 1/8W 0402
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.039" L x 0.022" W (1.00mm x 0.55mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.017" (0.42mm)
Part Status: Active
Resistance: 240 mOhms
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RA1C030LDT5CL RA1C030LDT5CL Rohm Semiconductor datasheet?p=RA1C030LD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 20V 3.0A, SMM1006, SMM1006:
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: DSN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +7V, -0.2V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
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RA1C030LDT5CL RA1C030LDT5CL Rohm Semiconductor datasheet?p=RA1C030LD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 20V 3.0A, SMM1006, SMM1006:
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: DSN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +7V, -0.2V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
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SIR-481ST3HM Rohm Semiconductor Description: INFRARED EMITTER
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SIR-481ST3HL Rohm Semiconductor Description: INFRARED EMITTER
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BU10JA2MNVX-CTL BU10JA2MNVX-CTL Rohm Semiconductor buxxja2mnvx-c-e.pdf Description: IC REG LIN 1V 200MA SSON004R1010
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BU10JA2MNVX-CTL BU10JA2MNVX-CTL Rohm Semiconductor buxxja2mnvx-c-e.pdf Description: IC REG LIN 1V 200MA SSON004R1010
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BU25JA2MNVX-CTL BU25JA2MNVX-CTL Rohm Semiconductor datasheet?p=BU25JA2MNVX-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 2.5V SSON004R1010
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004R1010
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.62V @ 200mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
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BU2JJA2MNVX-CTL BU2JJA2MNVX-CTL Rohm Semiconductor buxxja2mnvx-c-e.pdf Description: IC REG LINEAR 2.85V SSON004R1010
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BU2JJA2MNVX-CTL BU2JJA2MNVX-CTL Rohm Semiconductor buxxja2mnvx-c-e.pdf Description: IC REG LINEAR 2.85V SSON004R1010
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BU28JA2MNVX-CTL BU28JA2MNVX-CTL Rohm Semiconductor datasheet?p=BU28JA2MNVX-C&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: IC REG LINEAR 2.8V SSON004R1010
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004R1010
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.58V @ 200mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Produkt ist nicht verfügbar
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RB168M150DDTR RB168M150DDTR Rohm Semiconductor RB168M150.pdf Description: DIODE SCHOTTKY 150V 1A PMDU
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RB168M150DDTR RB168M150DDTR Rohm Semiconductor RB168M150.pdf Description: DIODE SCHOTTKY 150V 1A PMDU
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PDZVTR20B PDZVTR20B Rohm Semiconductor datasheet?p=PDZV20B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 21.2V 1W PMDTM
Tolerance: ±5.66%
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 21.2 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 15 V
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PDZVTR20B PDZVTR20B Rohm Semiconductor datasheet?p=PDZV20B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 21.2V 1W PMDTM
Tolerance: ±5.66%
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 21.2 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 15 V
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R6007KNJTL R6007KNJTL Rohm Semiconductor r6007knjtl-e.pdf Description: MOSFET N-CH 600V 7A LPTS
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R6007KNJTL R6007KNJTL Rohm Semiconductor r6007knjtl-e.pdf Description: MOSFET N-CH 600V 7A LPTS
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SDR03EZPD4020 SDR03EZPD4020 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPD4020 SDR03EZPD4020 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPF3320 SDR03EZPF3320 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 332 Ohms
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SDR03EZPF3320 SDR03EZPF3320 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 332 Ohms
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RSS070N05HZGTB RSS070N05HZGTB Rohm Semiconductor rss070n05hzgtb-e.pdf Description: AUTOMOTIVE NCH 45V 7A POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Qualification: AEC-Q101
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RSS060P05HZGTB RSS060P05HZGTB Rohm Semiconductor datasheet?p=RSS060P05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PCH -45V -6A POWER MOSFET: RSS06
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 32.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
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RSS060P05HZGTB RSS060P05HZGTB Rohm Semiconductor datasheet?p=RSS060P05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PCH -45V -6A POWER MOSFET: RSS06
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 32.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
auf Bestellung 2285 Stücke:
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5+3.96 EUR
10+3.55 EUR
100+2.85 EUR
500+2.34 EUR
1000+1.94 EUR
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R6511KNJTL datasheet?p=R6511KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6511KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Produkt ist nicht verfügbar
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R6511KNJTL datasheet?p=R6511KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6511KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
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3+6.42 EUR
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R6511END3TL1 datasheet?p=R6511END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6511END3TL1
Hersteller: Rohm Semiconductor
Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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R6511END3TL1 datasheet?p=R6511END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6511END3TL1
Hersteller: Rohm Semiconductor
Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 3267 Stücke:
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4+5.21 EUR
10+3.72 EUR
100+2.59 EUR
500+2.11 EUR
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BZX84C33VLYFHT116 datasheet?p=BZX84C33VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C33VLYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 33V 250MW SOT23
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
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Anzahl Preis
3000+0.11 EUR
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BZX84C33VLYFHT116 datasheet?p=BZX84C33VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C33VLYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 33V 250MW SOT23
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
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RQ5H025TNTL datasheet?p=RQ5H025TN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5H025TNTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
auf Bestellung 6000 Stücke:
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3000+0.31 EUR
6000+0.29 EUR
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RQ5H025TNTL datasheet?p=RQ5H025TN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5H025TNTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
auf Bestellung 7577 Stücke:
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Anzahl Preis
14+1.3 EUR
22+0.81 EUR
100+0.52 EUR
500+0.4 EUR
1000+0.36 EUR
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2SAR512RHZGTL 2sar512rhzgtl-e.pdf
2SAR512RHZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 2A TSMT3
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Anzahl Preis
3000+0.57 EUR
Mindestbestellmenge: 3000
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2SAR512RHZGTL 2sar512rhzgtl-e.pdf
2SAR512RHZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 2A TSMT3
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Anzahl Preis
12+1.48 EUR
14+1.3 EUR
100+0.99 EUR
500+0.78 EUR
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RB061QS-20T18R datasheet?p=RB061QS-20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB061QS-20T18R
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 20V 2A SMD1006
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMD1006
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 10 V
Produkt ist nicht verfügbar
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RB061QS-20T18R datasheet?p=RB061QS-20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB061QS-20T18R
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 20V 2A SMD1006
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMD1006
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 10 V
auf Bestellung 10333 Stücke:
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Anzahl Preis
17+1.04 EUR
28+0.64 EUR
100+0.41 EUR
500+0.31 EUR
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2000+0.25 EUR
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ML610Q172-101GAZWAX ML610Q172-73_12-7-17.pdf
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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BD5423MUV-E2
BD5423MUV-E2
Hersteller: Rohm Semiconductor
Description: IC AMP D STEREO 17W VQFN048V7070
Features: Depop, Mute, Short-Circuit and Thermal Protection
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 10V ~ 16.5V
Max Output Power x Channels @ Load: 17W x 2 @ 4Ohm
Supplier Device Package: VQFN048V7070
Produkt ist nicht verfügbar
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BDE1204G-TR BDE1204G.pdf
BDE1204G-TR
Hersteller: Rohm Semiconductor
Description: THERMOSTAT 120DEGC ACT LOW 5SSOP
Produkt ist nicht verfügbar
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BDE1250G-TR
BDE1250G-TR
Hersteller: Rohm Semiconductor
Description: THERMOSTAT 125DEGC ACT LOW 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Open Drain
Mounting Type: Surface Mount
Output: Active Low
Accuracy: ±4°C
Operating Temperature: -30°C ~ 130°C
Current - Supply: 16µA
Switching Temperature: 125°C
Current - Output (Max): 5mA
Supplier Device Package: 5-SSOP
Output Function: /OverTemp, VTemp
Trip Temperature Threshold: Hot
Selectable Hysteresis: No
Part Status: Obsolete
Voltage - Supply: 2.9 V ~ 5.5 V
Produkt ist nicht verfügbar
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BDE1000G-TR
BDE1000G-TR
Hersteller: Rohm Semiconductor
Description: THERMOSTAT 100DEGC ACT LOW 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Open Drain
Mounting Type: Surface Mount
Output: Active Low
Accuracy: ±4°C
Operating Temperature: -30°C ~ 130°C
Current - Supply: 16µA
Switching Temperature: 100°C
Current - Output (Max): 5mA
Supplier Device Package: 5-SSOP
Output Function: /OverTemp, VTemp
Trip Temperature Threshold: Hot
Selectable Hysteresis: No
Voltage - Supply: 2.9 V ~ 5.5 V
Produkt ist nicht verfügbar
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SMF17VTFTR datasheet?p=SMF17VTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMF17VTFTR
Hersteller: Rohm Semiconductor
Description: TRANSIENT VOLTAGE SUPPRESSOR (AE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
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SMF17VTFTR datasheet?p=SMF17VTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMF17VTFTR
Hersteller: Rohm Semiconductor
Description: TRANSIENT VOLTAGE SUPPRESSOR (AE
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
auf Bestellung 2950 Stücke:
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Anzahl Preis
17+1.06 EUR
20+0.9 EUR
100+0.67 EUR
500+0.53 EUR
1000+0.41 EUR
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RB098BM100FHTL datasheet?p=RB098BM100FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB098BM100FHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 100V 6A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11.4 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+0.66 EUR
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RB098BM100FHTL datasheet?p=RB098BM100FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB098BM100FHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 100V 6A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11.4 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 3656 Stücke:
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Anzahl Preis
10+1.76 EUR
14+1.35 EUR
100+1.04 EUR
500+0.82 EUR
1000+0.74 EUR
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BD7683FJ-LBE2 datasheet?p=BD7683FJ-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7683FJ-LBE2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SWITCH FLYBACK 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 120kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting, Over Load, Over Voltage
Voltage - Start Up: 19.5 V
Produkt ist nicht verfügbar
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BD7683FJ-LBE2 datasheet?p=BD7683FJ-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7683FJ-LBE2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SWITCH FLYBACK 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 120kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting, Over Load, Over Voltage
Voltage - Start Up: 19.5 V
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+1.65 EUR
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BD7683FJ-LBE2 datasheet?p=BD7683FJ-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7683FJ-LBE2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SWITCH FLYBACK 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 120kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting, Over Load, Over Voltage
Voltage - Start Up: 19.5 V
Produkt ist nicht verfügbar
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BD7685FJ-LBE2 datasheet?p=BD7685FJ-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7685FJ-LBE2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SWITCH QUASI RES CTRL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz ~ 120kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: 8-SOP-J
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 19.5 V
Control Features: Frequency Control, Soft Start
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.82 EUR
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BD7685FJ-LBE2 datasheet?p=BD7685FJ-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7685FJ-LBE2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SWITCH QUASI RES CTRL
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz ~ 120kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: 8-SOP-J
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 19.5 V
Control Features: Frequency Control, Soft Start
auf Bestellung 2492 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.17 EUR
10+3.29 EUR
25+2.79 EUR
100+2.23 EUR
250+1.96 EUR
500+1.79 EUR
1000+1.65 EUR
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RB500SM-30T2R datasheet?p=RB500SM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB500SM-30T2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
auf Bestellung 8000 Stücke:
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Anzahl Preis
8000+0.082 EUR
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RB500SM-30T2R datasheet?p=RB500SM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB500SM-30T2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
auf Bestellung 11038 Stücke:
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Anzahl Preis
35+0.51 EUR
58+0.3 EUR
105+0.17 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
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BR93G66NUX-3BTTR datasheet?p=BR93G66NUX-3B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR93G66NUX-3BTTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 4KBIT VSON008X2030
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: VSON008X2030
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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Anzahl Preis
4000+0.25 EUR
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BR93G66NUX-3BTTR datasheet?p=BR93G66NUX-3B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR93G66NUX-3BTTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 4KBIT VSON008X2030
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: VSON008X2030
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
auf Bestellung 4000 Stücke:
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Anzahl Preis
20+0.88 EUR
23+0.78 EUR
25+0.75 EUR
50+0.72 EUR
100+0.69 EUR
250+0.66 EUR
500+0.64 EUR
1000+0.62 EUR
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BR93G46NUX-3TTR datasheet?p=BR93G46NUX-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR93G46NUX-3TTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 1KBIT VSON008X2030
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: VSON008X2030
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 64 x 16
DigiKey Programmable: Not Verified
auf Bestellung 4000 Stücke:
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Anzahl Preis
4000+0.57 EUR
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BR93G46NUX-3TTR datasheet?p=BR93G46NUX-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR93G46NUX-3TTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 1KBIT VSON008X2030
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: VSON008X2030
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 64 x 16
DigiKey Programmable: Not Verified
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
23+0.8 EUR
25+0.74 EUR
100+0.65 EUR
500+0.64 EUR
1000+0.62 EUR
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ML610Q112-013TCZ07GL
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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UCR01MVPFSR075 ucr-e.pdf
UCR01MVPFSR075
Hersteller: Rohm Semiconductor
Description: RES 0.075 OHM 1% 1/8W 0402
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.039" L x 0.022" W (1.00mm x 0.55mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.017" (0.42mm)
Part Status: Active
Resistance: 75 mOhms
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10000+0.22 EUR
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UCR01MVPFSR075 ucr-e.pdf
UCR01MVPFSR075
Hersteller: Rohm Semiconductor
Description: RES 0.075 OHM 1% 1/8W 0402
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.039" L x 0.022" W (1.00mm x 0.55mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.017" (0.42mm)
Part Status: Active
Resistance: 75 mOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
25+0.71 EUR
29+0.61 EUR
50+0.53 EUR
100+0.42 EUR
250+0.38 EUR
500+0.31 EUR
1000+0.25 EUR
5000+0.23 EUR
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UCR01MVPFLR240 ucr-e.pdf
UCR01MVPFLR240
Hersteller: Rohm Semiconductor
Description: RES 0.24 OHM 1% 1/8W 0402
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.039" L x 0.022" W (1.00mm x 0.55mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.017" (0.42mm)
Part Status: Active
Resistance: 240 mOhms
auf Bestellung 10000 Stücke:
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Anzahl Preis
10000+0.23 EUR
Mindestbestellmenge: 10000
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UCR01MVPFLR240 ucr-e.pdf
UCR01MVPFLR240
Hersteller: Rohm Semiconductor
Description: RES 0.24 OHM 1% 1/8W 0402
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.039" L x 0.022" W (1.00mm x 0.55mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.017" (0.42mm)
Part Status: Active
Resistance: 240 mOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
23+0.78 EUR
28+0.63 EUR
50+0.55 EUR
100+0.45 EUR
250+0.39 EUR
500+0.32 EUR
1000+0.25 EUR
5000+0.24 EUR
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RA1C030LDT5CL datasheet?p=RA1C030LD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RA1C030LDT5CL
Hersteller: Rohm Semiconductor
Description: NCH 20V 3.0A, SMM1006, SMM1006:
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: DSN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +7V, -0.2V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Produkt ist nicht verfügbar
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RA1C030LDT5CL datasheet?p=RA1C030LD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RA1C030LDT5CL
Hersteller: Rohm Semiconductor
Description: NCH 20V 3.0A, SMM1006, SMM1006:
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: DSN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +7V, -0.2V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
auf Bestellung 13262 Stücke:
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Anzahl Preis
19+0.95 EUR
30+0.59 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
2000+0.23 EUR
5000+0.2 EUR
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SIR-481ST3HM
Hersteller: Rohm Semiconductor
Description: INFRARED EMITTER
Produkt ist nicht verfügbar
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SIR-481ST3HL
Hersteller: Rohm Semiconductor
Description: INFRARED EMITTER
Produkt ist nicht verfügbar
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BU10JA2MNVX-CTL buxxja2mnvx-c-e.pdf
BU10JA2MNVX-CTL
Hersteller: Rohm Semiconductor
Description: IC REG LIN 1V 200MA SSON004R1010
Produkt ist nicht verfügbar
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BU10JA2MNVX-CTL buxxja2mnvx-c-e.pdf
BU10JA2MNVX-CTL
Hersteller: Rohm Semiconductor
Description: IC REG LIN 1V 200MA SSON004R1010
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
18+1.02 EUR
25+0.96 EUR
100+0.78 EUR
250+0.73 EUR
500+0.62 EUR
1000+0.5 EUR
2500+0.45 EUR
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BU25JA2MNVX-CTL datasheet?p=BU25JA2MNVX-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU25JA2MNVX-CTL
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 2.5V SSON004R1010
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004R1010
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.62V @ 200mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BU2JJA2MNVX-CTL buxxja2mnvx-c-e.pdf
BU2JJA2MNVX-CTL
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 2.85V SSON004R1010
Produkt ist nicht verfügbar
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BU2JJA2MNVX-CTL buxxja2mnvx-c-e.pdf
BU2JJA2MNVX-CTL
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 2.85V SSON004R1010
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
18+1.02 EUR
25+0.96 EUR
100+0.78 EUR
250+0.73 EUR
500+0.62 EUR
1000+0.5 EUR
2500+0.45 EUR
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BU28JA2MNVX-CTL datasheet?p=BU28JA2MNVX-C&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
BU28JA2MNVX-CTL
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 2.8V SSON004R1010
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004R1010
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.58V @ 200mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Produkt ist nicht verfügbar
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RB168M150DDTR RB168M150.pdf
RB168M150DDTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDU
Produkt ist nicht verfügbar
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RB168M150DDTR RB168M150.pdf
RB168M150DDTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDU
Produkt ist nicht verfügbar
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PDZVTR20B datasheet?p=PDZV20B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
PDZVTR20B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 21.2V 1W PMDTM
Tolerance: ±5.66%
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 21.2 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 15 V
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.15 EUR
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PDZVTR20B datasheet?p=PDZV20B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
PDZVTR20B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 21.2V 1W PMDTM
Tolerance: ±5.66%
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 21.2 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 15 V
auf Bestellung 4505 Stücke:
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Anzahl Preis
35+0.51 EUR
46+0.39 EUR
100+0.23 EUR
500+0.22 EUR
1000+0.15 EUR
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R6007KNJTL r6007knjtl-e.pdf
R6007KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A LPTS
Produkt ist nicht verfügbar
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R6007KNJTL r6007knjtl-e.pdf
R6007KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A LPTS
auf Bestellung 592 Stücke:
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Anzahl Preis
6+3.33 EUR
10+2.99 EUR
100+2.4 EUR
500+1.97 EUR
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SDR03EZPD4020 sdr-e.pdf
SDR03EZPD4020
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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Anzahl Preis
5000+0.047 EUR
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SDR03EZPD4020 sdr-e.pdf
SDR03EZPD4020
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 9895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
51+0.35 EUR
131+0.14 EUR
1000+0.057 EUR
2500+0.052 EUR
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SDR03EZPF3320 sdr-e.pdf
SDR03EZPF3320
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 332 Ohms
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.032 EUR
10000+0.03 EUR
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SDR03EZPF3320 sdr-e.pdf
SDR03EZPF3320
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 332 Ohms
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
75+0.24 EUR
192+0.092 EUR
1000+0.039 EUR
2500+0.035 EUR
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RSS070N05HZGTB rss070n05hzgtb-e.pdf
RSS070N05HZGTB
Hersteller: Rohm Semiconductor
Description: AUTOMOTIVE NCH 45V 7A POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2098 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.52 EUR
10+2.26 EUR
100+1.54 EUR
500+1.23 EUR
1000+1.2 EUR
Mindestbestellmenge: 5
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RSS060P05HZGTB datasheet?p=RSS060P05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RSS060P05HZGTB
Hersteller: Rohm Semiconductor
Description: PCH -45V -6A POWER MOSFET: RSS06
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 32.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RSS060P05HZGTB datasheet?p=RSS060P05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RSS060P05HZGTB
Hersteller: Rohm Semiconductor
Description: PCH -45V -6A POWER MOSFET: RSS06
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 32.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
auf Bestellung 2285 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.96 EUR
10+3.55 EUR
100+2.85 EUR
500+2.34 EUR
1000+1.94 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
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