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RGWX5TS65DGC11 RGWX5TS65DGC11 Rohm Semiconductor datasheet?p=RGWX5TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 650V 132A TO247N
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 132 A
Gate Charge: 213 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 2.39mJ (on), 1.68mJ (off)
Td (on/off) @ 25°C: 64ns/229ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Reverse Recovery Time (trr): 101 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 348 W
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RGT80TS65DGC13 RGT80TS65DGC13 Rohm Semiconductor datasheet?p=RGT80TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 70A TO-247G
Power - Max: 234 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Part Status: Active
Gate Charge: 79 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Td (on/off) @ 25°C: 34ns/119ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 236 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RGT00TS65DGC13 RGT00TS65DGC13 Rohm Semiconductor rgt00ts65dgc13-e.pdf Description: IGBT TRNCH FIELD 650V 85A TO247G
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RGTH50TS65DGC13 RGTH50TS65DGC13 Rohm Semiconductor datasheet?p=RGTH50TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 50A TO247G
Power - Max: 174 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
Gate Charge: 49 nC
Test Condition: 400V, 25A, 10Ohm, 15V
Td (on/off) @ 25°C: 27ns/94ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RGT40TS65DGC13 RGT40TS65DGC13 Rohm Semiconductor datasheet?p=RGT40TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 40A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 144 W
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RGWX5TS65DHRC11 RGWX5TS65DHRC11 Rohm Semiconductor datasheet?p=RGWX5TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/237ns
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 213 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
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RGW00TS65DHRC11 RGW00TS65DHRC11 Rohm Semiconductor datasheet?p=RGW00TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/186ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
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RGW80TS65DHRC11 RGW80TS65DHRC11 Rohm Semiconductor datasheet?p=RGW80TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
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RGT50TS65DGC11 RGT50TS65DGC11 Rohm Semiconductor rgt50ts65d-e.pdf Description: IGBT TRENCH FS 650V 48A TO-247N
Power - Max: 174 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 48 A
Part Status: Not For New Designs
Gate Charge: 49 nC
Test Condition: 400V, 25A, 10Ohm, 15V
Td (on/off) @ 25°C: 27ns/88ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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SFR18EZPF1503 SFR18EZPF1503 Rohm Semiconductor sfr-e.pdf Description: RES 150K OHM 1% 1/4W 1206
Resistance: 150 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Packaging: Tape & Reel (TR)
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SFR18EZPF1503 SFR18EZPF1503 Rohm Semiconductor sfr-e.pdf Description: RES 150K OHM 1% 1/4W 1206
Resistance: 150 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Packaging: Cut Tape (CT)
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BD7281YG-CTR BD7281YG-CTR Rohm Semiconductor datasheet?p=BD7281YG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NANO CAP, LOW NOISE & INPUT/OUTP
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 1
Part Status: Active
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Slew Rate: 10V/µs
Current - Supply: 1.7mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Supplier Device Package: 5-SSOP
Voltage - Input Offset: 10 µV
Current - Input Bias: 0.5 pA
Gain Bandwidth Product: 7 MHz
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BD7281YG-CTR BD7281YG-CTR Rohm Semiconductor datasheet?p=BD7281YG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NANO CAP, LOW NOISE & INPUT/OUTP
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Input Offset: 10 µV
Current - Input Bias: 0.5 pA
Gain Bandwidth Product: 7 MHz
Slew Rate: 10V/µs
Current - Supply: 1.7mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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RS6R035BHTB1 RS6R035BHTB1 Rohm Semiconductor rs6r035bhtb1-e.pdf Description: NCH 150V 35A, HSOP8, POWER MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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RS6R035BHTB1 RS6R035BHTB1 Rohm Semiconductor rs6r035bhtb1-e.pdf Description: NCH 150V 35A, HSOP8, POWER MOSFE
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 3W (Ta), 73W (Tc)
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BD82A26MUF-ME2 BD82A26MUF-ME2 Rohm Semiconductor datasheet?p=BD82A26MUF-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NANO CAP, WHITE LED DRIVER FOR A
Part Status: Active
Voltage - Supply (Max): 48V
Voltage - Supply (Min): 3V
Dimming: Analog, PWM
Supplier Device Package: VQFN32FBV050
Topology: Step-Up (Boost)
Internal Switch(s): No
Current - Output / Channel: 150mA
Applications: Backlight
Operating Temperature: -40°C ~ 125°C (TA)
Type: DC DC Regulator
Frequency: 270kHz ~ 2.42MHz
Number of Outputs: 6
Mounting Type: Surface Mount, Wettable Flank
Voltage - Output: 50V
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
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BD82A26MUF-ME2 BD82A26MUF-ME2 Rohm Semiconductor datasheet?p=BD82A26MUF-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NANO CAP, WHITE LED DRIVER FOR A
Part Status: Active
Voltage - Supply (Max): 48V
Voltage - Supply (Min): 3V
Dimming: Analog, PWM
Supplier Device Package: VQFN32FBV050
Topology: Step-Up (Boost)
Internal Switch(s): No
Current - Output / Channel: 150mA
Applications: Backlight
Operating Temperature: -40°C ~ 125°C (TA)
Type: DC DC Regulator
Frequency: 270kHz ~ 2.42MHz
Number of Outputs: 6
Mounting Type: Surface Mount, Wettable Flank
Voltage - Output: 50V
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
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RCJ160N20TL RCJ160N20TL Rohm Semiconductor datasheet?p=RCJ160N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 16A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
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RCJ160N20TL RCJ160N20TL Rohm Semiconductor datasheet?p=RCJ160N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 16A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
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RR264MM-400TFTR RR264MM-400TFTR Rohm Semiconductor datasheet?p=RR264MM-400TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 400V 700MA PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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BD69740FV-GE2 BD69740FV-GE2 Rohm Semiconductor bd69740fv-e.pdf Description: IC MOTOR DRIVER 16SSOPB
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BD69740FV-GE2 BD69740FV-GE2 Rohm Semiconductor bd69740fv-e.pdf Description: IC MOTOR DRIVER 16SSOPB
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BD6971FS-E2 BD6971FS-E2 Rohm Semiconductor bd6971fs-e.pdf Description: IC MOTOR DRIVER 0V-7V 16SSOPA
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BD6973FV-E2 BD6973FV-E2 Rohm Semiconductor BD6973FV.pdf Description: IC MOTOR DRIVER 4.3V-17V 16SSOPB
Technology: NMOS, PMOS
Applications: Fan Controller
Voltage - Supply: 4.3V ~ 17V
Output Configuration: Pre-Driver - Half Bridge (2)
Operating Temperature: -40°C ~ 100°C
Interface: PWM
Current - Output: 12mA
Function: Controller - Speed
Mounting Type: Surface Mount
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-SSOP-B
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BD6974FV-E2 BD6974FV-E2 Rohm Semiconductor BD6974FV Description: IC MOTOR DRIVER 4.3V-17V 16SSOPB
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BD63800MUF-EVK-002 BD63800MUF-EVK-002 Rohm Semiconductor bd63800muf-evk-002_ug-e.pdf Description: EVAL BOARD FOR BD63800
Embedded: Yes
Secondary Attributes: On-Board Test Points
Primary Attributes: 6V ~ 28V Supply
Utilized IC / Part: BD63800
Contents: Board(s), Cable(s)
Type: Power Management
Function: Motor Controller/Driver, Stepper
Packaging: Bulk
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VS54VLNVWMTR VS54VLNVWMTR Rohm Semiconductor datasheet?p=VS54VLNVWM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 54V 200W, COMPACT AND HIGHLY REL
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
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VS54VLNVWMTR VS54VLNVWMTR Rohm Semiconductor datasheet?p=VS54VLNVWM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 54V 200W, COMPACT AND HIGHLY REL
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
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VS54VLNVWMTFTR VS54VLNVWMTFTR Rohm Semiconductor datasheet?p=VS54VLNVWMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 54VWM 87.1VC PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
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VS54VLNVWMTFTR VS54VLNVWMTFTR Rohm Semiconductor datasheet?p=VS54VLNVWMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 54VWM 87.1VC PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
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SDR03EZPD68R0 SDR03EZPD68R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPD68R0 SDR03EZPD68R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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BH1900NUX-EVK-001 BH1900NUX-EVK-001 Rohm Semiconductor bh1900nux-evk-001_ug-e.pdf Description: TEMPERATURE SENSOR EVALUATION BO
Packaging: Bulk
Sensitivity: ±3°C
Interface: 2-Wire Serial
Contents: Board(s)
Voltage - Supply: 2.7V ~ 3.6V
Sensor Type: Temperature
Utilized IC / Part: BH1900
Embedded: No
Sensing Range: -30°C ~ 95°C
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DSK9J01Q0L Rohm Semiconductor Description: TRANS JFET N-CH 30MA SMD
Produkt ist nicht verfügbar
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RBR5L60ADDTE25 RBR5L60ADDTE25 Rohm Semiconductor datasheet?p=RBR5L60ADD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 5A PMDS
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C
Supplier Device Package: PMDS
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
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RBR5L60ADDTE25 RBR5L60ADDTE25 Rohm Semiconductor datasheet?p=RBR5L60ADD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 5A PMDS
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C
Supplier Device Package: PMDS
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
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RBR20NS40ATL RBR20NS40ATL Rohm Semiconductor datasheet?p=RBR20NS40A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 40V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
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RBR20NS40ATL RBR20NS40ATL Rohm Semiconductor datasheet?p=RBR20NS40A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 40V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
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RBR20NS40AFHTL RBR20NS40AFHTL Rohm Semiconductor datasheet?p=RBR20NS40AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 40V 20A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
Qualification: AEC-Q101
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RBR20NS40AFHTL RBR20NS40AFHTL Rohm Semiconductor datasheet?p=RBR20NS40AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 40V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
Qualification: AEC-Q101
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BD65B60GWL-E2 BD65B60GWL-E2 Rohm Semiconductor datasheet?p=BD65B60GWL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC LED DVR REG 25MA 12UCSP50L1
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 2.7V
Dimming: PWM
Supplier Device Package: 12-UCSP50L1 (1.4x1.8)
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Current - Output / Channel: 25mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Type: DC DC Regulator
Frequency: 600kHz, 1.1MHz
Number of Outputs: 2
Mounting Type: Surface Mount
Voltage - Output: 28.5V
Package / Case: 12-UFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SH8K26GZ0TB1 SH8K26GZ0TB1 Rohm Semiconductor datasheet?p=SH8K26&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 40V NCH+NCH POWER MOSFET : MIDDL
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SH8K26GZ0TB1 SH8K26GZ0TB1 Rohm Semiconductor datasheet?p=SH8K26&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 40V NCH+NCH POWER MOSFET : MIDDL
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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RGS00TS65EHRC11 RGS00TS65EHRC11 Rohm Semiconductor datasheet?p=RGS00TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 88A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 113 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/115ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 58 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
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RGW80TS65EHRC11 RGW80TS65EHRC11 Rohm Semiconductor datasheet?p=RGW80TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 80A TO247N
Power - Max: 214 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 110 nC
Test Condition: 400V, 20A, 10Ohm, 15V
Td (on/off) @ 25°C: 43ns/148ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Reverse Recovery Time (trr): 86 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RGWX5TS65EHRC11 RGWX5TS65EHRC11 Rohm Semiconductor datasheet?p=RGWX5TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 650V 132A TO247N
Power - Max: 348 W
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 132 A
Gate Charge: 213 nC
Test Condition: 400V, 37.5A, 10Ohm, 15V
Td (on/off) @ 25°C: 59ns/243ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Reverse Recovery Time (trr): 100 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RGW00TS65EHRC11 RGW00TS65EHRC11 Rohm Semiconductor datasheet?p=RGW00TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 96A TO247N
Power - Max: 254 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 96 A
Gate Charge: 141 nC
Test Condition: 400V, 25A, 10Ohm, 15V
Td (on/off) @ 25°C: 50ns/183ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Reverse Recovery Time (trr): 90 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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LTR50UZPFSR012 LTR50UZPFSR012 Rohm Semiconductor ltr-low-e.pdf Description: HIGH POWER LOW OHMIC CHIP RESIST
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 12 mOhms
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LTR50UZPFSR012 LTR50UZPFSR012 Rohm Semiconductor ltr-low-e.pdf Description: HIGH POWER LOW OHMIC CHIP RESIST
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 12 mOhms
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LTR50UZPFSR016 LTR50UZPFSR016 Rohm Semiconductor ltr-low-e.pdf Description: HIGH POWER LOW OHMIC CHIP RESIST
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Temperature Coefficient: 0/ +300ppm/°C
Package / Case: Wide 2010 (5025 Metric), 1020
Features: Automotive AEC-Q200, Current Sense
Tolerance: ±1%
Power (Watts): 2W
Packaging: Tape & Reel (TR)
Resistance: 16 mOhms
Part Status: Active
Height - Seated (Max): 0.029" (0.73mm)
Supplier Device Package: 1020
Number of Terminations: 2
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LTR50UZPFSR016 LTR50UZPFSR016 Rohm Semiconductor ltr-low-e.pdf Description: HIGH POWER LOW OHMIC CHIP RESIST
Height - Seated (Max): 0.029" (0.73mm)
Supplier Device Package: 1020
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Temperature Coefficient: 0/ +300ppm/°C
Package / Case: Wide 2010 (5025 Metric), 1020
Features: Automotive AEC-Q200, Current Sense
Tolerance: ±1%
Power (Watts): 2W
Packaging: Cut Tape (CT)
Resistance: 16 mOhms
Part Status: Active
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LTR50UZPFSR024 LTR50UZPFSR024 Rohm Semiconductor ltr-low-e.pdf Description: HIGH POWER LOW OHMIC CHIP RESIST
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 24 mOhms
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LTR50UZPFSR024 LTR50UZPFSR024 Rohm Semiconductor ltr-low-e.pdf Description: HIGH POWER LOW OHMIC CHIP RESIST
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 24 mOhms
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DTC143XE3HZGTL DTC143XE3HZGTL Rohm Semiconductor datasheet?p=DTC143XE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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DTC143XE3HZGTL DTC143XE3HZGTL Rohm Semiconductor datasheet?p=DTC143XE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: EMT3
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Qualification: AEC-Q101
Grade: Automotive
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DTC143TE3HZGTL DTC143TE3HZGTL Rohm Semiconductor datasheet?p=DTC143TE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Resistors Included: R1 Only
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DTC143TE3HZGTL DTC143TE3HZGTL Rohm Semiconductor datasheet?p=DTC143TE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Qualification: AEC-Q101
Grade: Automotive
Resistors Included: R1 Only
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BM6244FS-E2 BM6244FS-E2 Rohm Semiconductor datasheet?p=BM6244FS&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC FAN MOTOR DVR 3PH SSOP-A54_36
Packaging: Cut Tape (CT)
Package / Case: 54-SOP (0.449", 11.40mm Width), 36 Leads
Mounting Type: Surface Mount
Function: Driver
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 200V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 250V
Supplier Device Package: SSOP-A54_36
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
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BM6205FS-E2 BM6205FS-E2 Rohm Semiconductor SFC2015_E_A17_Package.pdf Description: IC HALF BRIDGE DRVR 2.5A 54SSOP
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 54-SOP (0.449", 11.40mm Width), 36 Leads
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.7Ohm
Applications: AC Motors
Current - Output / Channel: 2.5A
Current - Peak Output: 4A
Technology: Power MOSFET
Voltage - Load: 400V (Max)
Supplier Device Package: SSOP-A54_36
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive
Part Status: Not For New Designs
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BM6209FS-E2 BM6209FS-E2 Rohm Semiconductor SFC2015_E_A17_Package.pdf Description: IC MOTOR DVR 3PH BRUSHLSS 54SSOP
Packaging: Tape & Reel (TR)
Package / Case: 54-SOP (0.449", 11.40mm Width), 36 Leads
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: Logic
Operating Temperature: -20°C ~ 100°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 400V
Applications: Fan Motor Driver
Technology: NMOS
Voltage - Load: 600V
Supplier Device Package: SSOP-A54_36
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Not For New Designs
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RGWX5TS65DGC11 datasheet?p=RGWX5TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGWX5TS65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 132A TO247N
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 132 A
Gate Charge: 213 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 2.39mJ (on), 1.68mJ (off)
Td (on/off) @ 25°C: 64ns/229ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Reverse Recovery Time (trr): 101 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 348 W
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RGT80TS65DGC13 datasheet?p=RGT80TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT80TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 70A TO-247G
Power - Max: 234 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Part Status: Active
Gate Charge: 79 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Td (on/off) @ 25°C: 34ns/119ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 236 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RGT00TS65DGC13 rgt00ts65dgc13-e.pdf
RGT00TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 85A TO247G
Produkt ist nicht verfügbar
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RGTH50TS65DGC13 datasheet?p=RGTH50TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTH50TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 50A TO247G
Power - Max: 174 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
Gate Charge: 49 nC
Test Condition: 400V, 25A, 10Ohm, 15V
Td (on/off) @ 25°C: 27ns/94ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RGT40TS65DGC13 datasheet?p=RGT40TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT40TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 40A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 144 W
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RGWX5TS65DHRC11 datasheet?p=RGWX5TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGWX5TS65DHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/237ns
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 213 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
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RGW00TS65DHRC11 datasheet?p=RGW00TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW00TS65DHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/186ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
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RGW80TS65DHRC11 datasheet?p=RGW80TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW80TS65DHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
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RGT50TS65DGC11 rgt50ts65d-e.pdf
RGT50TS65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 48A TO-247N
Power - Max: 174 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 48 A
Part Status: Not For New Designs
Gate Charge: 49 nC
Test Condition: 400V, 25A, 10Ohm, 15V
Td (on/off) @ 25°C: 27ns/88ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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SFR18EZPF1503 sfr-e.pdf
SFR18EZPF1503
Hersteller: Rohm Semiconductor
Description: RES 150K OHM 1% 1/4W 1206
Resistance: 150 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Packaging: Tape & Reel (TR)
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SFR18EZPF1503 sfr-e.pdf
SFR18EZPF1503
Hersteller: Rohm Semiconductor
Description: RES 150K OHM 1% 1/4W 1206
Resistance: 150 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Packaging: Cut Tape (CT)
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BD7281YG-CTR datasheet?p=BD7281YG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7281YG-CTR
Hersteller: Rohm Semiconductor
Description: NANO CAP, LOW NOISE & INPUT/OUTP
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 1
Part Status: Active
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Slew Rate: 10V/µs
Current - Supply: 1.7mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Supplier Device Package: 5-SSOP
Voltage - Input Offset: 10 µV
Current - Input Bias: 0.5 pA
Gain Bandwidth Product: 7 MHz
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BD7281YG-CTR datasheet?p=BD7281YG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7281YG-CTR
Hersteller: Rohm Semiconductor
Description: NANO CAP, LOW NOISE & INPUT/OUTP
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 50 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Input Offset: 10 µV
Current - Input Bias: 0.5 pA
Gain Bandwidth Product: 7 MHz
Slew Rate: 10V/µs
Current - Supply: 1.7mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Push-Pull, Rail-to-Rail
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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RS6R035BHTB1 rs6r035bhtb1-e.pdf
RS6R035BHTB1
Hersteller: Rohm Semiconductor
Description: NCH 150V 35A, HSOP8, POWER MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS6R035BHTB1 rs6r035bhtb1-e.pdf
RS6R035BHTB1
Hersteller: Rohm Semiconductor
Description: NCH 150V 35A, HSOP8, POWER MOSFE
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 3W (Ta), 73W (Tc)
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BD82A26MUF-ME2 datasheet?p=BD82A26MUF-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD82A26MUF-ME2
Hersteller: Rohm Semiconductor
Description: NANO CAP, WHITE LED DRIVER FOR A
Part Status: Active
Voltage - Supply (Max): 48V
Voltage - Supply (Min): 3V
Dimming: Analog, PWM
Supplier Device Package: VQFN32FBV050
Topology: Step-Up (Boost)
Internal Switch(s): No
Current - Output / Channel: 150mA
Applications: Backlight
Operating Temperature: -40°C ~ 125°C (TA)
Type: DC DC Regulator
Frequency: 270kHz ~ 2.42MHz
Number of Outputs: 6
Mounting Type: Surface Mount, Wettable Flank
Voltage - Output: 50V
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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BD82A26MUF-ME2 datasheet?p=BD82A26MUF-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD82A26MUF-ME2
Hersteller: Rohm Semiconductor
Description: NANO CAP, WHITE LED DRIVER FOR A
Part Status: Active
Voltage - Supply (Max): 48V
Voltage - Supply (Min): 3V
Dimming: Analog, PWM
Supplier Device Package: VQFN32FBV050
Topology: Step-Up (Boost)
Internal Switch(s): No
Current - Output / Channel: 150mA
Applications: Backlight
Operating Temperature: -40°C ~ 125°C (TA)
Type: DC DC Regulator
Frequency: 270kHz ~ 2.42MHz
Number of Outputs: 6
Mounting Type: Surface Mount, Wettable Flank
Voltage - Output: 50V
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
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RCJ160N20TL datasheet?p=RCJ160N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCJ160N20TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 16A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
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RCJ160N20TL datasheet?p=RCJ160N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCJ160N20TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 16A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
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RR264MM-400TFTR datasheet?p=RR264MM-400TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RR264MM-400TFTR
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 400V 700MA PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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BD69740FV-GE2 bd69740fv-e.pdf
BD69740FV-GE2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 16SSOPB
Produkt ist nicht verfügbar
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BD69740FV-GE2 bd69740fv-e.pdf
BD69740FV-GE2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 16SSOPB
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BD6971FS-E2 bd6971fs-e.pdf
BD6971FS-E2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 0V-7V 16SSOPA
Produkt ist nicht verfügbar
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BD6973FV-E2 BD6973FV.pdf
BD6973FV-E2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 4.3V-17V 16SSOPB
Technology: NMOS, PMOS
Applications: Fan Controller
Voltage - Supply: 4.3V ~ 17V
Output Configuration: Pre-Driver - Half Bridge (2)
Operating Temperature: -40°C ~ 100°C
Interface: PWM
Current - Output: 12mA
Function: Controller - Speed
Mounting Type: Surface Mount
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-SSOP-B
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BD6974FV-E2 BD6974FV
BD6974FV-E2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 4.3V-17V 16SSOPB
Produkt ist nicht verfügbar
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BD63800MUF-EVK-002 bd63800muf-evk-002_ug-e.pdf
BD63800MUF-EVK-002
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BD63800
Embedded: Yes
Secondary Attributes: On-Board Test Points
Primary Attributes: 6V ~ 28V Supply
Utilized IC / Part: BD63800
Contents: Board(s), Cable(s)
Type: Power Management
Function: Motor Controller/Driver, Stepper
Packaging: Bulk
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VS54VLNVWMTR datasheet?p=VS54VLNVWM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VS54VLNVWMTR
Hersteller: Rohm Semiconductor
Description: 54V 200W, COMPACT AND HIGHLY REL
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
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VS54VLNVWMTR datasheet?p=VS54VLNVWM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VS54VLNVWMTR
Hersteller: Rohm Semiconductor
Description: 54V 200W, COMPACT AND HIGHLY REL
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
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VS54VLNVWMTFTR datasheet?p=VS54VLNVWMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VS54VLNVWMTFTR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 54VWM 87.1VC PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
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VS54VLNVWMTFTR datasheet?p=VS54VLNVWMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VS54VLNVWMTFTR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 54VWM 87.1VC PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
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SDR03EZPD68R0 sdr-e.pdf
SDR03EZPD68R0
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPD68R0 sdr-e.pdf
SDR03EZPD68R0
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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BH1900NUX-EVK-001 bh1900nux-evk-001_ug-e.pdf
BH1900NUX-EVK-001
Hersteller: Rohm Semiconductor
Description: TEMPERATURE SENSOR EVALUATION BO
Packaging: Bulk
Sensitivity: ±3°C
Interface: 2-Wire Serial
Contents: Board(s)
Voltage - Supply: 2.7V ~ 3.6V
Sensor Type: Temperature
Utilized IC / Part: BH1900
Embedded: No
Sensing Range: -30°C ~ 95°C
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DSK9J01Q0L
Hersteller: Rohm Semiconductor
Description: TRANS JFET N-CH 30MA SMD
Produkt ist nicht verfügbar
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RBR5L60ADDTE25 datasheet?p=RBR5L60ADD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR5L60ADDTE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 5A PMDS
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C
Supplier Device Package: PMDS
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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RBR5L60ADDTE25 datasheet?p=RBR5L60ADD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR5L60ADDTE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 5A PMDS
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C
Supplier Device Package: PMDS
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
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RBR20NS40ATL datasheet?p=RBR20NS40A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20NS40ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
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RBR20NS40ATL datasheet?p=RBR20NS40A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20NS40ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
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RBR20NS40AFHTL datasheet?p=RBR20NS40AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20NS40AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 20A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
Qualification: AEC-Q101
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1000+1.19 EUR
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RBR20NS40AFHTL datasheet?p=RBR20NS40AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20NS40AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
Qualification: AEC-Q101
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BD65B60GWL-E2 datasheet?p=BD65B60GWL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD65B60GWL-E2
Hersteller: Rohm Semiconductor
Description: IC LED DVR REG 25MA 12UCSP50L1
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 2.7V
Dimming: PWM
Supplier Device Package: 12-UCSP50L1 (1.4x1.8)
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Current - Output / Channel: 25mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Type: DC DC Regulator
Frequency: 600kHz, 1.1MHz
Number of Outputs: 2
Mounting Type: Surface Mount
Voltage - Output: 28.5V
Package / Case: 12-UFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SH8K26GZ0TB1 datasheet?p=SH8K26&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8K26GZ0TB1
Hersteller: Rohm Semiconductor
Description: 40V NCH+NCH POWER MOSFET : MIDDL
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SH8K26GZ0TB1 datasheet?p=SH8K26&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8K26GZ0TB1
Hersteller: Rohm Semiconductor
Description: 40V NCH+NCH POWER MOSFET : MIDDL
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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RGS00TS65EHRC11 datasheet?p=RGS00TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGS00TS65EHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 88A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 113 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/115ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 58 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
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2+18.3 EUR
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RGW80TS65EHRC11 datasheet?p=RGW80TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW80TS65EHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 80A TO247N
Power - Max: 214 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 110 nC
Test Condition: 400V, 20A, 10Ohm, 15V
Td (on/off) @ 25°C: 43ns/148ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Reverse Recovery Time (trr): 86 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RGWX5TS65EHRC11 datasheet?p=RGWX5TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGWX5TS65EHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 132A TO247N
Power - Max: 348 W
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 132 A
Gate Charge: 213 nC
Test Condition: 400V, 37.5A, 10Ohm, 15V
Td (on/off) @ 25°C: 59ns/243ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Reverse Recovery Time (trr): 100 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RGW00TS65EHRC11 datasheet?p=RGW00TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW00TS65EHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
Power - Max: 254 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 96 A
Gate Charge: 141 nC
Test Condition: 400V, 25A, 10Ohm, 15V
Td (on/off) @ 25°C: 50ns/183ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Reverse Recovery Time (trr): 90 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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LTR50UZPFSR012 ltr-low-e.pdf
LTR50UZPFSR012
Hersteller: Rohm Semiconductor
Description: HIGH POWER LOW OHMIC CHIP RESIST
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 12 mOhms
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LTR50UZPFSR012 ltr-low-e.pdf
LTR50UZPFSR012
Hersteller: Rohm Semiconductor
Description: HIGH POWER LOW OHMIC CHIP RESIST
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +300ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 12 mOhms
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LTR50UZPFSR016 ltr-low-e.pdf
LTR50UZPFSR016
Hersteller: Rohm Semiconductor
Description: HIGH POWER LOW OHMIC CHIP RESIST
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Temperature Coefficient: 0/ +300ppm/°C
Package / Case: Wide 2010 (5025 Metric), 1020
Features: Automotive AEC-Q200, Current Sense
Tolerance: ±1%
Power (Watts): 2W
Packaging: Tape & Reel (TR)
Resistance: 16 mOhms
Part Status: Active
Height - Seated (Max): 0.029" (0.73mm)
Supplier Device Package: 1020
Number of Terminations: 2
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LTR50UZPFSR016 ltr-low-e.pdf
LTR50UZPFSR016
Hersteller: Rohm Semiconductor
Description: HIGH POWER LOW OHMIC CHIP RESIST
Height - Seated (Max): 0.029" (0.73mm)
Supplier Device Package: 1020
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Temperature Coefficient: 0/ +300ppm/°C
Package / Case: Wide 2010 (5025 Metric), 1020
Features: Automotive AEC-Q200, Current Sense
Tolerance: ±1%
Power (Watts): 2W
Packaging: Cut Tape (CT)
Resistance: 16 mOhms
Part Status: Active
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LTR50UZPFSR024 ltr-low-e.pdf
LTR50UZPFSR024
Hersteller: Rohm Semiconductor
Description: HIGH POWER LOW OHMIC CHIP RESIST
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 24 mOhms
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LTR50UZPFSR024 ltr-low-e.pdf
LTR50UZPFSR024
Hersteller: Rohm Semiconductor
Description: HIGH POWER LOW OHMIC CHIP RESIST
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 24 mOhms
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DTC143XE3HZGTL datasheet?p=DTC143XE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC143XE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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DTC143XE3HZGTL datasheet?p=DTC143XE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC143XE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: EMT3
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Qualification: AEC-Q101
Grade: Automotive
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DTC143TE3HZGTL datasheet?p=DTC143TE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC143TE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Resistors Included: R1 Only
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DTC143TE3HZGTL datasheet?p=DTC143TE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC143TE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Qualification: AEC-Q101
Grade: Automotive
Resistors Included: R1 Only
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BM6244FS-E2 datasheet?p=BM6244FS&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM6244FS-E2
Hersteller: Rohm Semiconductor
Description: IC FAN MOTOR DVR 3PH SSOP-A54_36
Packaging: Cut Tape (CT)
Package / Case: 54-SOP (0.449", 11.40mm Width), 36 Leads
Mounting Type: Surface Mount
Function: Driver
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 200V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 250V
Supplier Device Package: SSOP-A54_36
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
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BM6205FS-E2 SFC2015_E_A17_Package.pdf
BM6205FS-E2
Hersteller: Rohm Semiconductor
Description: IC HALF BRIDGE DRVR 2.5A 54SSOP
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 54-SOP (0.449", 11.40mm Width), 36 Leads
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.7Ohm
Applications: AC Motors
Current - Output / Channel: 2.5A
Current - Peak Output: 4A
Technology: Power MOSFET
Voltage - Load: 400V (Max)
Supplier Device Package: SSOP-A54_36
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive
Part Status: Not For New Designs
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BM6209FS-E2 SFC2015_E_A17_Package.pdf
BM6209FS-E2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DVR 3PH BRUSHLSS 54SSOP
Packaging: Tape & Reel (TR)
Package / Case: 54-SOP (0.449", 11.40mm Width), 36 Leads
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: Logic
Operating Temperature: -20°C ~ 100°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 400V
Applications: Fan Motor Driver
Technology: NMOS
Voltage - Load: 600V
Supplier Device Package: SSOP-A54_36
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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