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RD3H160SPTL1 RD3H160SPTL1 Rohm Semiconductor datasheet?p=RD3H160SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 45V 16A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
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R6030KNZ4C13 R6030KNZ4C13 Rohm Semiconductor datasheet?p=R6030KNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 305W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
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R6035KNZ4C13 Rohm Semiconductor datasheet?p=R6035KNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
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RB095T-40NZC9 RB095T-40NZC9 Rohm Semiconductor datasheet?p=RB095T-40NZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 40V 6A TO220FN
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 6A
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RB095T-90 RB095T-90 Rohm Semiconductor datasheet?p=RB095T-90&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 90V 3A TO220FN
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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SDR10EZPF1003 Rohm Semiconductor sdr-e.pdf Description: RES 100K OHM 1% 1/2W 0805
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SDR10EZPF1003 Rohm Semiconductor sdr-e.pdf Description: RES 100K OHM 1% 1/2W 0805
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RB085BGE-30TL RB085BGE-30TL Rohm Semiconductor datasheet?p=RB085BGE-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 30V 10A TO252
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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RB085BGE-30TL RB085BGE-30TL Rohm Semiconductor datasheet?p=RB085BGE-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 30V 10A TO252
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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BD4958G-TR BD4958G-TR Rohm Semiconductor bd48xxg-e.pdf Description: IC RESET CMOS 5.8V 5SSOP
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BD4958G-TR BD4958G-TR Rohm Semiconductor bd48xxg-e.pdf Description: IC RESET CMOS 5.8V 5SSOP
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RBQ10BM65AFHTL RBQ10BM65AFHTL Rohm Semiconductor datasheet?p=RBQ10BM65AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
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RBQ10BM65AFHTL RBQ10BM65AFHTL Rohm Semiconductor datasheet?p=RBQ10BM65AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
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RBQ10T45ANZC9 RBQ10T45ANZC9 Rohm Semiconductor datasheet?p=RBQ10T45ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: RBQ10T45ANZ IS LOW IR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 45 V
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RBQ10T65ANZC9 RBQ10T65ANZC9 Rohm Semiconductor datasheet?p=RBQ10T65ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 65V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
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RBQ10NS45ATL RBQ10NS45ATL Rohm Semiconductor rbq10ns45atl-e.pdf Description: SCHOTTKY BARRIER DIODE
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RBQ10NS45ATL RBQ10NS45ATL Rohm Semiconductor rbq10ns45atl-e.pdf Description: SCHOTTKY BARRIER DIODE
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RBQ10NS65AFHTL RBQ10NS65AFHTL Rohm Semiconductor datasheet?p=RBQ10NS65AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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RBQ10NS65AFHTL RBQ10NS65AFHTL Rohm Semiconductor datasheet?p=RBQ10NS65AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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RBQ10NS65ATL RBQ10NS65ATL Rohm Semiconductor datasheet?p=RBQ10NS65A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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RBQ10NS65ATL RBQ10NS65ATL Rohm Semiconductor datasheet?p=RBQ10NS65A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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RBQ10NS45AFHTL RBQ10NS45AFHTL Rohm Semiconductor rbq10ns45afhtl-e.pdf Description: DIODE (RECTIFIER FRD) 45V-VRM 45
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RBQ10NS45AFHTL RBQ10NS45AFHTL Rohm Semiconductor rbq10ns45afhtl-e.pdf Description: DIODE (RECTIFIER FRD) 45V-VRM 45
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R6015FNJTL R6015FNJTL Rohm Semiconductor datasheet?p=R6015FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 15A LPT
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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R6015FNX R6015FNX Rohm Semiconductor datasheet?p=R6015FNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 15A TO-220FM
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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BSM300C12P3E201 BSM300C12P3E201 Rohm Semiconductor datasheet?p=BSM300C12P3E201&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 1200V 300A MODULE
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -4V
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 5.6V @ 80mA
Power Dissipation (Max): 1360W (Tc)
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
FET Type: N-Channel
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RB521VM-30TE-17 RB521VM-30TE-17 Rohm Semiconductor datasheet?p=RB521VM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 200MA UMD2
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
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RB521VM-30TE-17 RB521VM-30TE-17 Rohm Semiconductor datasheet?p=RB521VM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 200MA UMD2
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
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500+0.14 EUR
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RB521CM-40T2R RB521CM-40T2R Rohm Semiconductor datasheet?p=RB521CM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 100MAVMN2M
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: VMN2M (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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RB521CM-40T2R RB521CM-40T2R Rohm Semiconductor datasheet?p=RB521CM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 100MAVMN2M
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: VMN2M (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RB521CS-30FHT2RA RB521CS-30FHT2RA Rohm Semiconductor datasheet?p=RB521CS-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 100MAVMN2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMN2 (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Grade: Automotive
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RB521CS-30FHT2RA RB521CS-30FHT2RA Rohm Semiconductor datasheet?p=RB521CS-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 100MAVMN2
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMN2 (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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500+0.19 EUR
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RB521VM-40TE-17 RB521VM-40TE-17 Rohm Semiconductor datasheet?p=RB521VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 200MA UMD2
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
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RB521VM-40TE-17 RB521VM-40TE-17 Rohm Semiconductor datasheet?p=RB521VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 200MA UMD2
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
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RB078RSM10STFTL1 RB078RSM10STFTL1 Rohm Semiconductor datasheet?p=RB078RSM10STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 100V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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RB078RSM10STFTL1 RB078RSM10STFTL1 Rohm Semiconductor datasheet?p=RB078RSM10STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 100V 5A TO277A
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
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RB048RSM10STL1 RB048RSM10STL1 Rohm Semiconductor datasheet?p=RB048RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 100V 8A, TO-277GE, ULTRA LOW IR
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3.4 µA @ 100 V
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RB048RSM10STL1 RB048RSM10STL1 Rohm Semiconductor datasheet?p=RB048RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 100V 8A, TO-277GE, ULTRA LOW IR
Current - Reverse Leakage @ Vr: 3.4 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
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RB088RSM10STL1 RB088RSM10STL1 Rohm Semiconductor datasheet?p=RB088RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 100V 10A TO277A
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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RB088RSM10STL1 RB088RSM10STL1 Rohm Semiconductor datasheet?p=RB088RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 100V 10A TO277A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
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RB078RSM10STL1 RB078RSM10STL1 Rohm Semiconductor datasheet?p=RB078RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 100V 5A TO277A
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB078RSM10STL1 RB078RSM10STL1 Rohm Semiconductor datasheet?p=RB078RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 100V 5A TO277A
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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RB088RSM10STFTL1 RB088RSM10STFTL1 Rohm Semiconductor datasheet?p=RB088RSM10STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 100V 10A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB088RSM10STFTL1 RB088RSM10STFTL1 Rohm Semiconductor datasheet?p=RB088RSM10STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 100V 10A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
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UT6J3TCR UT6J3TCR Rohm Semiconductor ut6j3tcr-e.pdf Description: MOSFET 2P-CH 20V 3A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
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SFR10EZPF1001 SFR10EZPF1001 Rohm Semiconductor sfr-e.pdf Description: RES 1 KOHM 1% 1/8W 0805
Resistance: 1 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Anti-Sulfur
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Tape & Reel (TR)
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SFR10EZPF1001 SFR10EZPF1001 Rohm Semiconductor sfr-e.pdf Description: RES 1 KOHM 1% 1/8W 0805
Resistance: 1 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Anti-Sulfur
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Cut Tape (CT)
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RD3P130SPTL1 RD3P130SPTL1 Rohm Semiconductor datasheet?p=RD3P130SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 100V 13A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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RD3P130SPTL1 RD3P130SPTL1 Rohm Semiconductor datasheet?p=RD3P130SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 100V 13A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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RB161SS-207HFT2R Rohm Semiconductor Description: DIODE SCHOTTKY 20V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
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BU7233SF-E2 BU7233SF-E2 Rohm Semiconductor datasheet?p=BU7233SF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 2 CMOS 8SOP
Part Status: Active
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Current - Output (Typ): 6mA @ 3V
Current - Input Bias (Max): 1pA @ 3V
Voltage - Input Offset (Max): 11mV @ 3V
Current - Quiescent (Max): 25µA
Propagation Delay (Max): 1.8µs
Supplier Device Package: 8-SOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Operating Temperature: -40°C ~ 105°C
Type: CMOS
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: CMOS, Open-Drain
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BU7233SF-E2 BU7233SF-E2 Rohm Semiconductor datasheet?p=BU7233SF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 2 CMOS 8SOP
Part Status: Active
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Current - Output (Typ): 6mA @ 3V
Current - Input Bias (Max): 1pA @ 3V
Voltage - Input Offset (Max): 11mV @ 3V
Current - Quiescent (Max): 25µA
Propagation Delay (Max): 1.8µs
Supplier Device Package: 8-SOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Operating Temperature: -40°C ~ 105°C
Type: CMOS
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: CMOS, Open-Drain
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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DTC114TE3HZGTL DTC114TE3HZGTL Rohm Semiconductor datasheet?p=DTC114TE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 Only
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DTC114TE3HZGTL DTC114TE3HZGTL Rohm Semiconductor datasheet?p=DTC114TE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
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RGTH80TS65DGC13 RGTH80TS65DGC13 Rohm Semiconductor datasheet?p=RGTH80TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 70A TO247G
Power - Max: 234 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 79 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Td (on/off) @ 25°C: 34ns/120ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 236 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RGWS80TS65DGC13 RGWS80TS65DGC13 Rohm Semiconductor datasheet?p=RGWS80TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 71A TO247G
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Switching Energy: 700µJ (on), 660µJ (off)
Td (on/off) @ 25°C: 40ns/114ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Reverse Recovery Time (trr): 88 ns
Input Type: Standard
Power - Max: 202 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 71 A
Gate Charge: 83 nC
Test Condition: 400V, 40A, 10Ohm, 15V
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RGS80TS65DHRC11 RGS80TS65DHRC11 Rohm Semiconductor datasheet?p=RGS80TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 73A TO-247N
Power - Max: 272 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 73 A
Gate Charge: 48 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.05mJ (on), 1.03mJ (off)
Td (on/off) @ 25°C: 37ns/112ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 103 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RGSX5TS65DHRC11 RGSX5TS65DHRC11 Rohm Semiconductor datasheet?p=RGSX5TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 650V 114A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Reverse Recovery Time (trr): 114 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RGWS00TS65DGC13 RGWS00TS65DGC13 Rohm Semiconductor datasheet?p=RGWS00TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 88A TO-247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 46ns/145ns
Switching Energy: 980µJ (on), 910µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 108 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 245 W
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RGTH00TS65DGC13 RGTH00TS65DGC13 Rohm Semiconductor datasheet?p=RGTH00TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 85A TO247G
Power - Max: 277 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 85 A
Gate Charge: 94 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Td (on/off) @ 25°C: 39ns/143ns
IGBT Type: Trench Field Stop
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Reverse Recovery Time (trr): 54 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
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RD3H160SPTL1 datasheet?p=RD3H160SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3H160SPTL1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 16A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
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R6030KNZ4C13 datasheet?p=R6030KNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6030KNZ4C13
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 305W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
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R6035KNZ4C13 datasheet?p=R6035KNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
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RB095T-40NZC9 datasheet?p=RB095T-40NZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB095T-40NZC9
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 6A TO220FN
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 6A
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RB095T-90 datasheet?p=RB095T-90&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB095T-90
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 90V 3A TO220FN
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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SDR10EZPF1003 sdr-e.pdf
Hersteller: Rohm Semiconductor
Description: RES 100K OHM 1% 1/2W 0805
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SDR10EZPF1003 sdr-e.pdf
Hersteller: Rohm Semiconductor
Description: RES 100K OHM 1% 1/2W 0805
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RB085BGE-30TL datasheet?p=RB085BGE-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB085BGE-30TL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 10A TO252
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB085BGE-30TL datasheet?p=RB085BGE-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB085BGE-30TL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 10A TO252
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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BD4958G-TR bd48xxg-e.pdf
BD4958G-TR
Hersteller: Rohm Semiconductor
Description: IC RESET CMOS 5.8V 5SSOP
Produkt ist nicht verfügbar
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BD4958G-TR bd48xxg-e.pdf
BD4958G-TR
Hersteller: Rohm Semiconductor
Description: IC RESET CMOS 5.8V 5SSOP
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RBQ10BM65AFHTL datasheet?p=RBQ10BM65AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10BM65AFHTL
Hersteller: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
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RBQ10BM65AFHTL datasheet?p=RBQ10BM65AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10BM65AFHTL
Hersteller: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
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RBQ10T45ANZC9 datasheet?p=RBQ10T45ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10T45ANZC9
Hersteller: Rohm Semiconductor
Description: RBQ10T45ANZ IS LOW IR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 45 V
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RBQ10T65ANZC9 datasheet?p=RBQ10T65ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10T65ANZC9
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 65V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
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RBQ10NS45ATL rbq10ns45atl-e.pdf
RBQ10NS45ATL
Hersteller: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE
Produkt ist nicht verfügbar
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RBQ10NS45ATL rbq10ns45atl-e.pdf
RBQ10NS45ATL
Hersteller: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE
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RBQ10NS65AFHTL datasheet?p=RBQ10NS65AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10NS65AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RBQ10NS65AFHTL datasheet?p=RBQ10NS65AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10NS65AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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RBQ10NS65ATL datasheet?p=RBQ10NS65A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10NS65ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RBQ10NS65ATL datasheet?p=RBQ10NS65A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10NS65ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RBQ10NS45AFHTL rbq10ns45afhtl-e.pdf
RBQ10NS45AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE (RECTIFIER FRD) 45V-VRM 45
Produkt ist nicht verfügbar
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RBQ10NS45AFHTL rbq10ns45afhtl-e.pdf
RBQ10NS45AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE (RECTIFIER FRD) 45V-VRM 45
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R6015FNJTL datasheet?p=R6015FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6015FNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A LPT
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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R6015FNX datasheet?p=R6015FNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6015FNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A TO-220FM
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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BSM300C12P3E201 datasheet?p=BSM300C12P3E201&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSM300C12P3E201
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 300A MODULE
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -4V
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 5.6V @ 80mA
Power Dissipation (Max): 1360W (Tc)
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
FET Type: N-Channel
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RB521VM-30TE-17 datasheet?p=RB521VM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521VM-30TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA UMD2
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
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3000+0.083 EUR
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RB521VM-30TE-17 datasheet?p=RB521VM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521VM-30TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA UMD2
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
auf Bestellung 14746 Stücke:
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53+0.39 EUR
76+0.27 EUR
116+0.18 EUR
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RB521CM-40T2R datasheet?p=RB521CM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521CM-40T2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MAVMN2M
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: VMN2M (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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8000+0.05 EUR
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RB521CM-40T2R datasheet?p=RB521CM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521CM-40T2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MAVMN2M
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: VMN2M (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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56+0.38 EUR
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144+0.14 EUR
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RB521CS-30FHT2RA datasheet?p=RB521CS-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521CS-30FHT2RA
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MAVMN2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMN2 (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Grade: Automotive
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8000+0.1 EUR
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RB521CS-30FHT2RA datasheet?p=RB521CS-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521CS-30FHT2RA
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MAVMN2
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMN2 (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 16783 Stücke:
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33+0.65 EUR
53+0.4 EUR
100+0.24 EUR
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RB521VM-40TE-17 datasheet?p=RB521VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521VM-40TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA UMD2
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
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3000+0.083 EUR
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RB521VM-40TE-17 datasheet?p=RB521VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521VM-40TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA UMD2
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
auf Bestellung 9399 Stücke:
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44+0.48 EUR
74+0.29 EUR
120+0.18 EUR
500+0.14 EUR
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RB078RSM10STFTL1 datasheet?p=RB078RSM10STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB078RSM10STFTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB078RSM10STFTL1 datasheet?p=RB078RSM10STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB078RSM10STFTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 5A TO277A
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
auf Bestellung 1635 Stücke:
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RB048RSM10STL1 datasheet?p=RB048RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB048RSM10STL1
Hersteller: Rohm Semiconductor
Description: 100V 8A, TO-277GE, ULTRA LOW IR
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3.4 µA @ 100 V
Produkt ist nicht verfügbar
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RB048RSM10STL1 datasheet?p=RB048RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB048RSM10STL1
Hersteller: Rohm Semiconductor
Description: 100V 8A, TO-277GE, ULTRA LOW IR
Current - Reverse Leakage @ Vr: 3.4 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 3912 Stücke:
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10+2.26 EUR
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RB088RSM10STL1 datasheet?p=RB088RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB088RSM10STL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 10A TO277A
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB088RSM10STL1 datasheet?p=RB088RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB088RSM10STL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 10A TO277A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
auf Bestellung 3798 Stücke:
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8+2.64 EUR
10+2.15 EUR
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RB078RSM10STL1 datasheet?p=RB078RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB078RSM10STL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 5A TO277A
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB078RSM10STL1 datasheet?p=RB078RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB078RSM10STL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 5A TO277A
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 3820 Stücke:
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9+2.51 EUR
14+1.61 EUR
100+1.19 EUR
500+0.93 EUR
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RB088RSM10STFTL1 datasheet?p=RB088RSM10STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB088RSM10STFTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 10A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB088RSM10STFTL1 datasheet?p=RB088RSM10STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB088RSM10STFTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 10A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
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UT6J3TCR ut6j3tcr-e.pdf
UT6J3TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 3A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
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SFR10EZPF1001 sfr-e.pdf
SFR10EZPF1001
Hersteller: Rohm Semiconductor
Description: RES 1 KOHM 1% 1/8W 0805
Resistance: 1 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Anti-Sulfur
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Tape & Reel (TR)
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SFR10EZPF1001 sfr-e.pdf
SFR10EZPF1001
Hersteller: Rohm Semiconductor
Description: RES 1 KOHM 1% 1/8W 0805
Resistance: 1 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Anti-Sulfur
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Cut Tape (CT)
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RD3P130SPTL1 datasheet?p=RD3P130SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3P130SPTL1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 100V 13A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
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RD3P130SPTL1 datasheet?p=RD3P130SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3P130SPTL1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 100V 13A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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RB161SS-207HFT2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
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BU7233SF-E2 datasheet?p=BU7233SF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU7233SF-E2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2 CMOS 8SOP
Part Status: Active
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Current - Output (Typ): 6mA @ 3V
Current - Input Bias (Max): 1pA @ 3V
Voltage - Input Offset (Max): 11mV @ 3V
Current - Quiescent (Max): 25µA
Propagation Delay (Max): 1.8µs
Supplier Device Package: 8-SOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Operating Temperature: -40°C ~ 105°C
Type: CMOS
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: CMOS, Open-Drain
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BU7233SF-E2 datasheet?p=BU7233SF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU7233SF-E2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2 CMOS 8SOP
Part Status: Active
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Current - Output (Typ): 6mA @ 3V
Current - Input Bias (Max): 1pA @ 3V
Voltage - Input Offset (Max): 11mV @ 3V
Current - Quiescent (Max): 25µA
Propagation Delay (Max): 1.8µs
Supplier Device Package: 8-SOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Operating Temperature: -40°C ~ 105°C
Type: CMOS
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: CMOS, Open-Drain
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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DTC114TE3HZGTL datasheet?p=DTC114TE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC114TE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 Only
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DTC114TE3HZGTL datasheet?p=DTC114TE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC114TE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
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RGTH80TS65DGC13 datasheet?p=RGTH80TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTH80TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 70A TO247G
Power - Max: 234 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 79 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Td (on/off) @ 25°C: 34ns/120ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 236 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RGWS80TS65DGC13 datasheet?p=RGWS80TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGWS80TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 71A TO247G
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Switching Energy: 700µJ (on), 660µJ (off)
Td (on/off) @ 25°C: 40ns/114ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Reverse Recovery Time (trr): 88 ns
Input Type: Standard
Power - Max: 202 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 71 A
Gate Charge: 83 nC
Test Condition: 400V, 40A, 10Ohm, 15V
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RGS80TS65DHRC11 datasheet?p=RGS80TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGS80TS65DHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 73A TO-247N
Power - Max: 272 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 73 A
Gate Charge: 48 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.05mJ (on), 1.03mJ (off)
Td (on/off) @ 25°C: 37ns/112ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 103 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RGSX5TS65DHRC11 datasheet?p=RGSX5TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGSX5TS65DHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 114A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Reverse Recovery Time (trr): 114 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RGWS00TS65DGC13 datasheet?p=RGWS00TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGWS00TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 88A TO-247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 46ns/145ns
Switching Energy: 980µJ (on), 910µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 108 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 245 W
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RGTH00TS65DGC13 datasheet?p=RGTH00TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTH00TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 85A TO247G
Power - Max: 277 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 85 A
Gate Charge: 94 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Td (on/off) @ 25°C: 39ns/143ns
IGBT Type: Trench Field Stop
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Supplier Device Package: TO-247G
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Reverse Recovery Time (trr): 54 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
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