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SFR03EZPF5103 SFR03EZPF5103 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 510 kOhms
auf Bestellung 5000 Stücke:
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5000+0.029 EUR
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SFR03EZPF5103 SFR03EZPF5103 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 510 kOhms
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84+0.21 EUR
167+0.11 EUR
250+0.07 EUR
293+0.06 EUR
500+0.043 EUR
1000+0.038 EUR
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SFR03EZPF9103 SFR03EZPF9103 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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SFR03EZPF9103 SFR03EZPF9103 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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80+0.22 EUR
207+0.085 EUR
1000+0.037 EUR
2500+0.032 EUR
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ML610Q172-112GAZWAX Rohm Semiconductor ML610Q172-73_12-7-17.pdf Description: IC
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ML610Q174-475GAZWAX Rohm Semiconductor datasheet?p=ML610Q174&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Number of I/O: 49
DigiKey Programmable: Not Verified
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UT6KC5TCR UT6KC5TCR Rohm Semiconductor datasheet?p=UT6KC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 3.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8D
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UT6KC5TCR UT6KC5TCR Rohm Semiconductor datasheet?p=UT6KC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 3.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8D
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100+1.72 EUR
500+1.38 EUR
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SH8KE6TB1 SH8KE6TB1 Rohm Semiconductor datasheet?p=SH8KE6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 100V 4.5A DUAL NCH+NCH, SOP8, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
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SH8KE6TB1 SH8KE6TB1 Rohm Semiconductor datasheet?p=SH8KE6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 100V 4.5A DUAL NCH+NCH, SOP8, PO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 1567 Stücke:
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10+2.72 EUR
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500+1.8 EUR
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BZX84C3V9LYFHT116 BZX84C3V9LYFHT116 Rohm Semiconductor datasheet?p=BZX84C3V9LYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 3.9V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5.13%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C3V9LYFHT116 BZX84C3V9LYFHT116 Rohm Semiconductor datasheet?p=BZX84C3V9LYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 3.9V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5.13%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
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BZX84C3V9LYT116 BZX84C3V9LYT116 Rohm Semiconductor datasheet?p=BZX84C3V9LY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 3.9V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5.13%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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3000+0.097 EUR
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BZX84C3V9LYT116 BZX84C3V9LYT116 Rohm Semiconductor datasheet?p=BZX84C3V9LY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 3.9V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5.13%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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35+0.51 EUR
46+0.39 EUR
100+0.22 EUR
500+0.15 EUR
1000+0.11 EUR
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BD10IA5MEFJ-LBH2 BD10IA5MEFJ-LBH2 Rohm Semiconductor bdxxia5mefj-lb-e.pdf Description: 500MA 1V, FIXED OUTPUT, HIGH-ACC
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BD10IA5MEFJ-LBH2 BD10IA5MEFJ-LBH2 Rohm Semiconductor bdxxia5mefj-lb-e.pdf Description: 500MA 1V, FIXED OUTPUT, HIGH-ACC
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BRCB016GWL-3UE2 BRCB016GWL-3UE2 Rohm Semiconductor datasheet?p=BRCB016GWL-3U&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 16KBIT I2C 5UCSP50L1
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, CSPBGA
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 5-UCSP50L1 (1.1x1.15)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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BRCB016GWL-3UE2 BRCB016GWL-3UE2 Rohm Semiconductor datasheet?p=BRCB016GWL-3U&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 16KBIT I2C 5UCSP50L1
Packaging: Cut Tape (CT)
Package / Case: 5-UFBGA, CSPBGA
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 5-UCSP50L1 (1.1x1.15)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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25+0.73 EUR
50+0.71 EUR
100+0.7 EUR
250+0.68 EUR
500+0.66 EUR
1000+0.64 EUR
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HP8MA2TB1 HP8MA2TB1 Rohm Semiconductor datasheet?p=HP8MA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 30V 18A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
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HP8MA2TB1 HP8MA2TB1 Rohm Semiconductor datasheet?p=HP8MA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 30V 18A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
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100+1.71 EUR
500+1.44 EUR
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SDR03EZPD43R2 SDR03EZPD43R2 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPD43R2 SDR03EZPD43R2 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPD4303 SDR03EZPD4303 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 kOhms
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SDR03EZPD4303 SDR03EZPD4303 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 kOhms
auf Bestellung 9897 Stücke:
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50+0.35 EUR
128+0.14 EUR
1000+0.058 EUR
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BD9528AMUV-E2 BD9528AMUV-E2 Rohm Semiconductor vqfn032v5050_1-e.pdf Description: IC REG QD BUCK/LNR VQFN032V5050
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 100°C
Voltage - Supply: 5.5V ~ 28V
Frequency - Switching: 200kHz ~ 500kHz
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Supplier Device Package: VQFN032V5050
Voltage/Current - Output 1: Adj to 5.5V
Voltage/Current - Output 2: Adj to 5.5V
Voltage/Current - Output 3: 3.3V, 100mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 4
Produkt ist nicht verfügbar
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BD9528AMUV-E2 BD9528AMUV-E2 Rohm Semiconductor vqfn032v5050_1-e.pdf Description: IC REG QD BUCK/LNR VQFN032V5050
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 100°C
Voltage - Supply: 5.5V ~ 28V
Frequency - Switching: 200kHz ~ 500kHz
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Supplier Device Package: VQFN032V5050
Voltage/Current - Output 1: Adj to 5.5V
Voltage/Current - Output 2: Adj to 5.5V
Voltage/Current - Output 3: 3.3V, 100mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 4
Produkt ist nicht verfügbar
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SFR18EZPJ111 SFR18EZPJ111 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
auf Bestellung 10000 Stücke:
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5000+0.038 EUR
10000+0.035 EUR
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SFR18EZPJ111 SFR18EZPJ111 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
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64+0.28 EUR
162+0.11 EUR
1000+0.045 EUR
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SDR10EZPJ111 SDR10EZPJ111 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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Lieferzeit 10-14 Tag (e)
5000+0.05 EUR
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SDR10EZPJ111 SDR10EZPJ111 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SFR01MZPJ111 SFR01MZPJ111 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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SFR01MZPJ111 SFR01MZPJ111 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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BU4246F-TR BU4246F-TR Rohm Semiconductor bu42xxg-e.pdf Description: IC SUPERVISOR 1 CHANNEL 4SOP
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BU4246F-TR BU4246F-TR Rohm Semiconductor bu42xxg-e.pdf Description: IC SUPERVISOR 1 CHANNEL 4SOP
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R6507KNXC7G R6507KNXC7G Rohm Semiconductor r6507knx-e.pdf Description: 650V 7A TO-220FM, HIGH-SPEED SWI
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R6507KNXC7G R6507KNXC7G Rohm Semiconductor r6507knx-e.pdf Description: 650V 7A TO-220FM, HIGH-SPEED SWI
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R6509KNXC7G R6509KNXC7G Rohm Semiconductor datasheet?p=R6509KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 9A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 230µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
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R6511KNXC7G R6511KNXC7G Rohm Semiconductor datasheet?p=R6511KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 11A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
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R6524KNXC7G R6524KNXC7G Rohm Semiconductor datasheet?p=R6524KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 24A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
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RF202LAM2STR RF202LAM2STR Rohm Semiconductor datasheet?p=RF202LAM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 200V 2A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RF202LAM2STR RF202LAM2STR Rohm Semiconductor datasheet?p=RF202LAM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 200V 2A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RF302LAM2STR RF302LAM2STR Rohm Semiconductor datasheet?p=RF302LAM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 200V 3A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RF302LAM2STR RF302LAM2STR Rohm Semiconductor datasheet?p=RF302LAM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 200V 3A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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BU33JA3DG-CTR BU33JA3DG-CTR Rohm Semiconductor datasheet?p=BU33JA3DG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 300MA 3.3V, CMOS LDO REGULATORSF
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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BU33JA3DG-CTR BU33JA3DG-CTR Rohm Semiconductor datasheet?p=BU33JA3DG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 300MA 3.3V, CMOS LDO REGULATORSF
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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BD16852EFV-CE2 BD16852EFV-CE2 Rohm Semiconductor datasheet?p=BD16852EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: THREE-PHASE BRUSHLESS MOTOR DRIV
Packaging: Tape & Reel (TR)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 18V
Technology: DMOS
Voltage - Load: 5.5V ~ 18V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BD16852EFV-CE2 BD16852EFV-CE2 Rohm Semiconductor datasheet?p=BD16852EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: THREE-PHASE BRUSHLESS MOTOR DRIV
Packaging: Cut Tape (CT)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 18V
Technology: DMOS
Voltage - Load: 5.5V ~ 18V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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SDR10EZPF24R0 SDR10EZPF24R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
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SDR10EZPF24R0 SDR10EZPF24R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
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ML610Q174-448GAZWAAL Rohm Semiconductor ML610Q174_8-31-18.pdf Description: IC
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BSS670T116 BSS670T116 Rohm Semiconductor datasheet?p=BSS670&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 60V 650MA, SOT-23, SMALL SIG
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
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BSS670T116 BSS670T116 Rohm Semiconductor datasheet?p=BSS670&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 60V 650MA, SOT-23, SMALL SIG
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
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CSL1901VW1 CSL1901VW1 Rohm Semiconductor datasheet?p=CSL1901VW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED RED DIFFUSED 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 4.8mcd
Voltage - Forward (Vf) (Typ): 1.8V
Lens Color: White
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 630nm
Supplier Device Package: 0603
Lens Transparency: Diffused
Lens Style: Rectangle with Flat Top
Lens Size: 1.10mm x 0.80mm
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CSL1901VW1 CSL1901VW1 Rohm Semiconductor datasheet?p=CSL1901VW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED RED DIFFUSED 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 4.8mcd
Voltage - Forward (Vf) (Typ): 1.8V
Lens Color: White
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 630nm
Supplier Device Package: 0603
Lens Transparency: Diffused
Lens Style: Rectangle with Flat Top
Lens Size: 1.10mm x 0.80mm
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EDZCVFHT2R6.8B EDZCVFHT2R6.8B Rohm Semiconductor edzcvfht2r6.8b-e Description: TVS DIODE 5VWM EMD2
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EDZCVFHT2R6.8B EDZCVFHT2R6.8B Rohm Semiconductor edzcvfht2r6.8b-e Description: TVS DIODE 5VWM EMD2
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RQ3E180BNTB1 RQ3E180BNTB1 Rohm Semiconductor datasheet?p=RQ3E180BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 30V 39A MIDDLE POWER MOSFET:
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
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RQ3E180BNTB1 RQ3E180BNTB1 Rohm Semiconductor datasheet?p=RQ3E180BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 30V 39A MIDDLE POWER MOSFET:
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
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DTA124XETL DTA124XETL Rohm Semiconductor datasheet?p=DTA124XE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 150MW EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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DTA124XEBTL DTA124XEBTL Rohm Semiconductor datasheet?p=DTA124XEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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SFR03EZPF5103 sfr-e.pdf
SFR03EZPF5103
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 510 kOhms
auf Bestellung 5000 Stücke:
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Anzahl Preis
5000+0.029 EUR
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SFR03EZPF5103 sfr-e.pdf
SFR03EZPF5103
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 510 kOhms
auf Bestellung 9970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
167+0.11 EUR
250+0.07 EUR
293+0.06 EUR
500+0.043 EUR
1000+0.038 EUR
Mindestbestellmenge: 84
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SFR03EZPF9103 sfr-e.pdf
SFR03EZPF9103
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
auf Bestellung 5000 Stücke:
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Anzahl Preis
5000+0.03 EUR
Mindestbestellmenge: 5000
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SFR03EZPF9103 sfr-e.pdf
SFR03EZPF9103
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
80+0.22 EUR
207+0.085 EUR
1000+0.037 EUR
2500+0.032 EUR
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ML610Q172-112GAZWAX ML610Q172-73_12-7-17.pdf
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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ML610Q174-475GAZWAX datasheet?p=ML610Q174&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
Hersteller: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Number of I/O: 49
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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UT6KC5TCR datasheet?p=UT6KC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UT6KC5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8D
Produkt ist nicht verfügbar
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UT6KC5TCR datasheet?p=UT6KC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UT6KC5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8D
auf Bestellung 1191 Stücke:
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Anzahl Preis
5+3.94 EUR
10+2.53 EUR
100+1.72 EUR
500+1.38 EUR
1000+1.27 EUR
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SH8KE6TB1 datasheet?p=SH8KE6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8KE6TB1
Hersteller: Rohm Semiconductor
Description: 100V 4.5A DUAL NCH+NCH, SOP8, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
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SH8KE6TB1 datasheet?p=SH8KE6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8KE6TB1
Hersteller: Rohm Semiconductor
Description: 100V 4.5A DUAL NCH+NCH, SOP8, PO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 1567 Stücke:
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Anzahl Preis
6+3.03 EUR
10+2.72 EUR
100+2.19 EUR
500+1.8 EUR
1000+1.49 EUR
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BZX84C3V9LYFHT116 datasheet?p=BZX84C3V9LYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C3V9LYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 3.9V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5.13%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C3V9LYFHT116 datasheet?p=BZX84C3V9LYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C3V9LYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 3.9V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5.13%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2415 Stücke:
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Anzahl Preis
38+0.48 EUR
73+0.24 EUR
118+0.15 EUR
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BZX84C3V9LYT116 datasheet?p=BZX84C3V9LY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C3V9LYT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 3.9V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5.13%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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Anzahl Preis
3000+0.097 EUR
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BZX84C3V9LYT116 datasheet?p=BZX84C3V9LY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C3V9LYT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 3.9V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5.13%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
auf Bestellung 5980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
46+0.39 EUR
100+0.22 EUR
500+0.15 EUR
1000+0.11 EUR
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BD10IA5MEFJ-LBH2 bdxxia5mefj-lb-e.pdf
BD10IA5MEFJ-LBH2
Hersteller: Rohm Semiconductor
Description: 500MA 1V, FIXED OUTPUT, HIGH-ACC
auf Bestellung 250 Stücke:
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Anzahl Preis
250+2.31 EUR
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BD10IA5MEFJ-LBH2 bdxxia5mefj-lb-e.pdf
BD10IA5MEFJ-LBH2
Hersteller: Rohm Semiconductor
Description: 500MA 1V, FIXED OUTPUT, HIGH-ACC
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.41 EUR
10+3.06 EUR
25+2.89 EUR
100+2.46 EUR
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BRCB016GWL-3UE2 datasheet?p=BRCB016GWL-3U&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BRCB016GWL-3UE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 5UCSP50L1
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, CSPBGA
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 5-UCSP50L1 (1.1x1.15)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.62 EUR
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BRCB016GWL-3UE2 datasheet?p=BRCB016GWL-3U&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BRCB016GWL-3UE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 5UCSP50L1
Packaging: Cut Tape (CT)
Package / Case: 5-UFBGA, CSPBGA
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 5-UCSP50L1 (1.1x1.15)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
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Anzahl Preis
23+0.79 EUR
24+0.75 EUR
25+0.73 EUR
50+0.71 EUR
100+0.7 EUR
250+0.68 EUR
500+0.66 EUR
1000+0.64 EUR
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HP8MA2TB1 datasheet?p=HP8MA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
HP8MA2TB1
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 18A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
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HP8MA2TB1 datasheet?p=HP8MA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
HP8MA2TB1
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 18A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 1674 Stücke:
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Anzahl Preis
6+2.94 EUR
10+2.22 EUR
100+1.71 EUR
500+1.44 EUR
1000+1.33 EUR
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SDR03EZPD43R2 sdr-e.pdf
SDR03EZPD43R2
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.053 EUR
10000+0.049 EUR
Mindestbestellmenge: 5000
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SDR03EZPD43R2 sdr-e.pdf
SDR03EZPD43R2
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
46+0.39 EUR
117+0.15 EUR
1000+0.063 EUR
2500+0.058 EUR
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SDR03EZPD4303 sdr-e.pdf
SDR03EZPD4303
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 kOhms
auf Bestellung 5000 Stücke:
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Anzahl Preis
5000+0.048 EUR
Mindestbestellmenge: 5000
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SDR03EZPD4303 sdr-e.pdf
SDR03EZPD4303
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 kOhms
auf Bestellung 9897 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
50+0.35 EUR
128+0.14 EUR
1000+0.058 EUR
2500+0.053 EUR
Mindestbestellmenge: 44
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BD9528AMUV-E2 vqfn032v5050_1-e.pdf
BD9528AMUV-E2
Hersteller: Rohm Semiconductor
Description: IC REG QD BUCK/LNR VQFN032V5050
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 100°C
Voltage - Supply: 5.5V ~ 28V
Frequency - Switching: 200kHz ~ 500kHz
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Supplier Device Package: VQFN032V5050
Voltage/Current - Output 1: Adj to 5.5V
Voltage/Current - Output 2: Adj to 5.5V
Voltage/Current - Output 3: 3.3V, 100mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 4
Produkt ist nicht verfügbar
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BD9528AMUV-E2 vqfn032v5050_1-e.pdf
BD9528AMUV-E2
Hersteller: Rohm Semiconductor
Description: IC REG QD BUCK/LNR VQFN032V5050
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 100°C
Voltage - Supply: 5.5V ~ 28V
Frequency - Switching: 200kHz ~ 500kHz
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Supplier Device Package: VQFN032V5050
Voltage/Current - Output 1: Adj to 5.5V
Voltage/Current - Output 2: Adj to 5.5V
Voltage/Current - Output 3: 3.3V, 100mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 4
Produkt ist nicht verfügbar
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SFR18EZPJ111 sfr-e.pdf
SFR18EZPJ111
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.038 EUR
10000+0.035 EUR
Mindestbestellmenge: 5000
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SFR18EZPJ111 sfr-e.pdf
SFR18EZPJ111
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
64+0.28 EUR
162+0.11 EUR
1000+0.045 EUR
2500+0.042 EUR
Mindestbestellmenge: 53
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SDR10EZPJ111 sdr-e.pdf
SDR10EZPJ111
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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Anzahl Preis
5000+0.05 EUR
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SDR10EZPJ111 sdr-e.pdf
SDR10EZPJ111
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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Anzahl Preis
42+0.42 EUR
49+0.36 EUR
124+0.14 EUR
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SFR01MZPJ111 sfr-e.pdf
SFR01MZPJ111
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
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SFR01MZPJ111 sfr-e.pdf
SFR01MZPJ111
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
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Anzahl Preis
91+0.19 EUR
100+0.18 EUR
259+0.068 EUR
1000+0.03 EUR
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BU4246F-TR bu42xxg-e.pdf
BU4246F-TR
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 4SOP
Produkt ist nicht verfügbar
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BU4246F-TR bu42xxg-e.pdf
BU4246F-TR
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 4SOP
auf Bestellung 1965 Stücke:
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Anzahl Preis
14+1.28 EUR
16+1.13 EUR
25+1.06 EUR
100+0.87 EUR
250+0.8 EUR
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R6507KNXC7G r6507knx-e.pdf
R6507KNXC7G
Hersteller: Rohm Semiconductor
Description: 650V 7A TO-220FM, HIGH-SPEED SWI
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R6507KNXC7G r6507knx-e.pdf
R6507KNXC7G
Hersteller: Rohm Semiconductor
Description: 650V 7A TO-220FM, HIGH-SPEED SWI
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Anzahl Preis
4+4.51 EUR
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R6509KNXC7G datasheet?p=R6509KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6509KNXC7G
Hersteller: Rohm Semiconductor
Description: 650V 9A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 230µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 3838 Stücke:
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R6511KNXC7G datasheet?p=R6511KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6511KNXC7G
Hersteller: Rohm Semiconductor
Description: 650V 11A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
auf Bestellung 3984 Stücke:
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4+5.21 EUR
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R6524KNXC7G datasheet?p=R6524KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6524KNXC7G
Hersteller: Rohm Semiconductor
Description: 650V 24A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
auf Bestellung 990 Stücke:
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3+8.73 EUR
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RF202LAM2STR datasheet?p=RF202LAM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF202LAM2STR
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 200V 2A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RF202LAM2STR datasheet?p=RF202LAM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF202LAM2STR
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 200V 2A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1854 Stücke:
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15+1.21 EUR
22+0.81 EUR
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RF302LAM2STR datasheet?p=RF302LAM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF302LAM2STR
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 200V 3A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RF302LAM2STR datasheet?p=RF302LAM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF302LAM2STR
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 200V 3A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 2541 Stücke:
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Anzahl Preis
11+1.62 EUR
17+1.07 EUR
100+0.75 EUR
500+0.58 EUR
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BU33JA3DG-CTR datasheet?p=BU33JA3DG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU33JA3DG-CTR
Hersteller: Rohm Semiconductor
Description: 300MA 3.3V, CMOS LDO REGULATORSF
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
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BU33JA3DG-CTR datasheet?p=BU33JA3DG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU33JA3DG-CTR
Hersteller: Rohm Semiconductor
Description: 300MA 3.3V, CMOS LDO REGULATORSF
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.2V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 1318 Stücke:
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8+2.29 EUR
13+1.41 EUR
25+1.17 EUR
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500+0.7 EUR
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BD16852EFV-CE2 datasheet?p=BD16852EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD16852EFV-CE2
Hersteller: Rohm Semiconductor
Description: THREE-PHASE BRUSHLESS MOTOR DRIV
Packaging: Tape & Reel (TR)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 18V
Technology: DMOS
Voltage - Load: 5.5V ~ 18V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BD16852EFV-CE2 datasheet?p=BD16852EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD16852EFV-CE2
Hersteller: Rohm Semiconductor
Description: THREE-PHASE BRUSHLESS MOTOR DRIV
Packaging: Cut Tape (CT)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 18V
Technology: DMOS
Voltage - Load: 5.5V ~ 18V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
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Anzahl Preis
2+11.25 EUR
10+7.45 EUR
25+6.46 EUR
100+5.35 EUR
250+4.8 EUR
500+4.47 EUR
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SDR10EZPF24R0 sdr-e.pdf
SDR10EZPF24R0
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
auf Bestellung 5000 Stücke:
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5000+0.064 EUR
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SDR10EZPF24R0 sdr-e.pdf
SDR10EZPF24R0
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
auf Bestellung 9445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
84+0.21 EUR
122+0.15 EUR
141+0.12 EUR
500+0.092 EUR
1000+0.081 EUR
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ML610Q174-448GAZWAAL ML610Q174_8-31-18.pdf
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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BSS670T116 datasheet?p=BSS670&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSS670T116
Hersteller: Rohm Semiconductor
Description: NCH 60V 650MA, SOT-23, SMALL SIG
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Produkt ist nicht verfügbar
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BSS670T116 datasheet?p=BSS670&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSS670T116
Hersteller: Rohm Semiconductor
Description: NCH 60V 650MA, SOT-23, SMALL SIG
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
auf Bestellung 287 Stücke:
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Anzahl Preis
22+0.83 EUR
35+0.51 EUR
100+0.32 EUR
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CSL1901VW1 datasheet?p=CSL1901VW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CSL1901VW1
Hersteller: Rohm Semiconductor
Description: LED RED DIFFUSED 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 4.8mcd
Voltage - Forward (Vf) (Typ): 1.8V
Lens Color: White
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 630nm
Supplier Device Package: 0603
Lens Transparency: Diffused
Lens Style: Rectangle with Flat Top
Lens Size: 1.10mm x 0.80mm
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CSL1901VW1 datasheet?p=CSL1901VW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CSL1901VW1
Hersteller: Rohm Semiconductor
Description: LED RED DIFFUSED 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 4.8mcd
Voltage - Forward (Vf) (Typ): 1.8V
Lens Color: White
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 630nm
Supplier Device Package: 0603
Lens Transparency: Diffused
Lens Style: Rectangle with Flat Top
Lens Size: 1.10mm x 0.80mm
auf Bestellung 2497 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
37+0.48 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.22 EUR
2000+0.2 EUR
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EDZCVFHT2R6.8B edzcvfht2r6.8b-e
EDZCVFHT2R6.8B
Hersteller: Rohm Semiconductor
Description: TVS DIODE 5VWM EMD2
Produkt ist nicht verfügbar
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EDZCVFHT2R6.8B edzcvfht2r6.8b-e
EDZCVFHT2R6.8B
Hersteller: Rohm Semiconductor
Description: TVS DIODE 5VWM EMD2
Produkt ist nicht verfügbar
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RQ3E180BNTB1 datasheet?p=RQ3E180BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ3E180BNTB1
Hersteller: Rohm Semiconductor
Description: NCH 30V 39A MIDDLE POWER MOSFET:
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
Produkt ist nicht verfügbar
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RQ3E180BNTB1 datasheet?p=RQ3E180BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ3E180BNTB1
Hersteller: Rohm Semiconductor
Description: NCH 30V 39A MIDDLE POWER MOSFET:
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
auf Bestellung 2820 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.2 EUR
10+2.02 EUR
100+1.5 EUR
500+1.38 EUR
1000+1.13 EUR
Mindestbestellmenge: 6
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DTA124XETL datasheet?p=DTA124XE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124XETL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 150MW EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 757 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
36+0.49 EUR
100+0.28 EUR
500+0.18 EUR
Mindestbestellmenge: 27
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DTA124XEBTL datasheet?p=DTA124XEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124XEBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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