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BD18IA5MEFJ-LBH2 BD18IA5MEFJ-LBH2 Rohm Semiconductor datasheet?p=BD18IA5MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 1.8V 500MA 8HTSOP
Current - Supply (Max): 700 µA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.9V @ 500mA
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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BD18IA5MEFJ-LBH2 BD18IA5MEFJ-LBH2 Rohm Semiconductor datasheet?p=BD18IA5MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 1.8V 500MA 8HTSOP
Current - Supply (Max): 700 µA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.9V @ 500mA
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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BD18GC0MEFJ-LBH2 BD18GC0MEFJ-LBH2 Rohm Semiconductor datasheet?p=BD18GC0MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 1.8V 1A 8HTSOP
Current - Supply (Max): 1.2 mA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 1.2V @ 1A
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 14V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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BD18GC0MEFJ-LBH2 BD18GC0MEFJ-LBH2 Rohm Semiconductor datasheet?p=BD18GC0MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 1.8V 1A 8HTSOP
Current - Supply (Max): 1.2 mA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 1.2V @ 1A
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 14V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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BD18FD0WHFP-TR BD18FD0WHFP-TR Rohm Semiconductor datasheet?p=BD18FD0WHFP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 2A 1.8V, FIXED OUTPUT, HIGH-ACCU
Protection Features: Over Current, Over Temperature, Short Circuit
PSRR: 55dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: HRP-5
Number of Regulators: 1
Voltage - Input (Max): 32V
Current - Quiescent (Iq): 1 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 2A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: HRP-5 (5 Leads + Tab)
Packaging: Tape & Reel (TR)
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BD18FD0WHFP-TR BD18FD0WHFP-TR Rohm Semiconductor datasheet?p=BD18FD0WHFP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 2A 1.8V, FIXED OUTPUT, HIGH-ACCU
Protection Features: Over Current, Over Temperature, Short Circuit
PSRR: 55dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: HRP-5
Number of Regulators: 1
Voltage - Input (Max): 32V
Current - Quiescent (Iq): 1 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 2A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: HRP-5 (5 Leads + Tab)
Packaging: Cut Tape (CT)
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BD18HC5MEFJ-ME2 BD18HC5MEFJ-ME2 Rohm Semiconductor bdxxhc5mefj-m-e.pdf Description: IC REG LINEAR 1.8V 1.5A 8HTSOP-J
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BD18HC5MEFJ-ME2 BD18HC5MEFJ-ME2 Rohm Semiconductor bdxxhc5mefj-m-e.pdf Description: IC REG LINEAR 1.8V 1.5A 8HTSOP-J
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BD18HA3MEFJ-ME2 BD18HA3MEFJ-ME2 Rohm Semiconductor bdxxha3mefj-m-e.pdf Description: IC REG LIN 1.8V 300MA 8HTSOP-J
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RB520S-40FHTE61 Rohm Semiconductor datasheet?p=RB520S-40FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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RB520S-403TTE61 Rohm Semiconductor rb520s-40[1].pdf Description: DIODE SCHOTTKY SMD
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RJ1L12CGNTLL RJ1L12CGNTLL Rohm Semiconductor rj1l12cgntll-e.pdf Description: NCH 60V 120A POWER MOSFET: RJ1L1
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RJ1L12CGNTLL RJ1L12CGNTLL Rohm Semiconductor rj1l12cgntll-e.pdf Description: NCH 60V 120A POWER MOSFET: RJ1L1
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RBQ30NS100AFHTL RBQ30NS100AFHTL Rohm Semiconductor datasheet?p=RBQ30NS100AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 100V 30A LPDS
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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RBQ30NS100AFHTL RBQ30NS100AFHTL Rohm Semiconductor datasheet?p=RBQ30NS100AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 100V 30A LPDS
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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RBQ30T45ANZC9 RBQ30T45ANZC9 Rohm Semiconductor datasheet?p=RBQ30T45ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 45V 15A TO220FN
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Cut Tape (CT)
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RBQ30T45ANZC9 RBQ30T45ANZC9 Rohm Semiconductor datasheet?p=RBQ30T45ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 45V 15A TO220FN
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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SCT3120AW7TL SCT3120AW7TL Rohm Semiconductor datasheet?p=SCT3120AW7&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 650V 21A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Power Dissipation (Max): 100W
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
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TLR2377YFVM-CTR TLR2377YFVM-CTR Rohm Semiconductor datasheet?p=TLR2377YFVM-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
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TLR2377YFVM-CTR TLR2377YFVM-CTR Rohm Semiconductor datasheet?p=TLR2377YFVM-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
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RBE2EA20ATR RBE2EA20ATR Rohm Semiconductor rbe2ea20atr-e.pdf Description: HIGH EFFICIENCY TYPE, 20V, 2A, S
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RBE2EA20ATR RBE2EA20ATR Rohm Semiconductor rbe2ea20atr-e.pdf Description: HIGH EFFICIENCY TYPE, 20V, 2A, S
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RB551VM-40TE-17 RB551VM-40TE-17 Rohm Semiconductor datasheet?p=RB551VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 200MA UMD2
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
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BR25G320FVM-3GTR BR25G320FVM-3GTR Rohm Semiconductor datasheet?p=BR25G320FVM-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Tape & Reel (TR)
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BR25G320FVM-3GTR BR25G320FVM-3GTR Rohm Semiconductor datasheet?p=BR25G320FVM-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
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R6020KNZC17 R6020KNZC17 Rohm Semiconductor datasheet?p=R6020KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 20A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Power Dissipation (Max): 68W (Tc)
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
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R6020ENZ4C13 R6020ENZ4C13 Rohm Semiconductor datasheet?p=R6020ENZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 20A TO247
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
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R6020JNZC17 R6020JNZC17 Rohm Semiconductor datasheet?p=R6020JNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 20A TO3PF
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bag
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 3.5mA
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R6020ENZC17 R6020ENZC17 Rohm Semiconductor datasheet?p=R6020ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 20A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
auf Bestellung 296 Stücke:
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R6020FNJTL R6020FNJTL Rohm Semiconductor datasheet?p=R6020FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 20A LPT
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 304W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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R6020KNZ1C9 R6020KNZ1C9 Rohm Semiconductor TO247_Inner_Structure.pdf Description: MOSFET N-CH 600V 20A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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R6020JNZC8 R6020JNZC8 Rohm Semiconductor Description: MOSFET N-CH 600V 20A TO3PF
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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R6020ANZFL1C8 R6020ANZFL1C8 Rohm Semiconductor R6020ANZ.pdf Description: MOSFET N-CH 600V 20A TO3
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
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R6020ANZ8U7C8 R6020ANZ8U7C8 Rohm Semiconductor R6020ANZ.pdf Description: MOSFET N-CH 600V 20A TO3
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
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R6020ENZM12C8 Rohm Semiconductor r6020enzc17-e.pdf Description: MOSFET N-CH 600V 20A TO3
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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RB095T-90NZC9 RB095T-90NZC9 Rohm Semiconductor datasheet?p=RB095T-90NZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 90V 6A TO220FN
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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50+2.66 EUR
100+2.19 EUR
500+1.85 EUR
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BD6346FV-E2 BD6346FV-E2 Rohm Semiconductor bd6346fv-e.pdf Description: IC MOTOR DRIVER 20SSOP
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BD6346FV-E2 BD6346FV-E2 Rohm Semiconductor bd6346fv-e.pdf Description: IC MOTOR DRIVER 20SSOP
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BD63441AFU-E2 BD63441AFU-E2 Rohm Semiconductor bd63441afu-e Description: IC MOTOR DRIVER 5.5V-16V 20SSOP
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BD63441AFU-E2 BD63441AFU-E2 Rohm Semiconductor bd63441afu-e Description: IC MOTOR DRIVER 5.5V-16V 20SSOP
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BD6345FV-E2 BD6345FV-E2 Rohm Semiconductor BD6345FV.pdf Description: IC MOTOR DRIVER 5.5V-17V 20SSOP
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BD8621EFV-E2 BD8621EFV-E2 Rohm Semiconductor BD8621EFV.pdf Description: IC REG CTRLR TV 1OUT HTSSOP-B20
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BD868D0MUF-CE2 BD868D0MUF-CE2 Rohm Semiconductor datasheet?p=BD868D0MUF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PMIC FOR AUTOMOTIVE CAMERA. THE
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4V ~ 18V
Applications: Camera
Supplier Device Package: VQFN20FV3535
Grade: Automotive
Qualification: AEC-Q100
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BD868D0MUF-CE2 BD868D0MUF-CE2 Rohm Semiconductor datasheet?p=BD868D0MUF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PMIC FOR AUTOMOTIVE CAMERA. THE
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4V ~ 18V
Applications: Camera
Supplier Device Package: VQFN20FV3535
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1950 Stücke:
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4+5.83 EUR
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BD86123AEFJ-E2 BD86123AEFJ-E2 Rohm Semiconductor BD86123AEFJ.pdf Description: IC REG BUCK ADJ 3A 8HTSOP-J
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 14.4V
Synchronous Rectifier: Yes
Supplier Device Package: 8-HTSOP-J
Topology: Buck
Voltage - Input (Max): 18V
Frequency - Switching: 550kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD8649EFV-E2 BD8649EFV-E2 Rohm Semiconductor BD8649EFV.pdf Description: IC REG BUCK ADJ 3A 20HTSSOP-B
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BD8668GW-E2 BD8668GW-E2 Rohm Semiconductor datasheet?p=BD8668GW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC BATT CHG LI-ION UCSP75M2
Current - Charging: Constant - Programmable
Battery Pack Voltage: 8.4V
Voltage - Supply (Max): 5.5V
Fault Protection: Over Current, Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Programmable Features: Current, Voltage
Supplier Device Package: 20-UCSP75M2 (2.2x2.2)
Battery Chemistry: Lithium Ion
Operating Temperature: -30°C ~ 85°C (TA)
Interface: USB
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 20-VFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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R6511ENJTL R6511ENJTL Rohm Semiconductor datasheet?p=R6511ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 11A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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R6511ENJTL R6511ENJTL Rohm Semiconductor datasheet?p=R6511ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 11A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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R6511KNJTL R6511KNJTL Rohm Semiconductor datasheet?p=R6511KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 11A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Produkt ist nicht verfügbar
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R6511KNJTL R6511KNJTL Rohm Semiconductor datasheet?p=R6511KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 11A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
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10+5.4 EUR
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R6511END3TL1 R6511END3TL1 Rohm Semiconductor datasheet?p=R6511END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 2500 Stücke:
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R6511END3TL1 R6511END3TL1 Rohm Semiconductor datasheet?p=R6511END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 3267 Stücke:
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BZX84C33VLYFHT116 BZX84C33VLYFHT116 Rohm Semiconductor datasheet?p=BZX84C33VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 33V 250MW SOT23
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.1 EUR
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BZX84C33VLYFHT116 BZX84C33VLYFHT116 Rohm Semiconductor datasheet?p=BZX84C33VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 33V 250MW SOT23
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
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RQ5H025TNTL RQ5H025TNTL Rohm Semiconductor datasheet?p=RQ5H025TN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
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RQ5H025TNTL RQ5H025TNTL Rohm Semiconductor datasheet?p=RQ5H025TN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
auf Bestellung 7577 Stücke:
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22+0.81 EUR
100+0.52 EUR
500+0.4 EUR
1000+0.36 EUR
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2SAR512RHZGTL 2SAR512RHZGTL Rohm Semiconductor 2sar512rhzgtl-e.pdf Description: TRANS PNP 30V 2A TSMT3
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2SAR512RHZGTL 2SAR512RHZGTL Rohm Semiconductor 2sar512rhzgtl-e.pdf Description: TRANS PNP 30V 2A TSMT3
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RB061QS-20T18R RB061QS-20T18R Rohm Semiconductor datasheet?p=RB061QS-20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 20V 2A SMD1006
Current - Reverse Leakage @ Vr: 200 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: SMD1006
Current - Average Rectified (Io): 2A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
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BD18IA5MEFJ-LBH2 datasheet?p=BD18IA5MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD18IA5MEFJ-LBH2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 500MA 8HTSOP
Current - Supply (Max): 700 µA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.9V @ 500mA
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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BD18IA5MEFJ-LBH2 datasheet?p=BD18IA5MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD18IA5MEFJ-LBH2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 500MA 8HTSOP
Current - Supply (Max): 700 µA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.9V @ 500mA
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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BD18GC0MEFJ-LBH2 datasheet?p=BD18GC0MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD18GC0MEFJ-LBH2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 1A 8HTSOP
Current - Supply (Max): 1.2 mA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 1.2V @ 1A
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 14V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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BD18GC0MEFJ-LBH2 datasheet?p=BD18GC0MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD18GC0MEFJ-LBH2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 1A 8HTSOP
Current - Supply (Max): 1.2 mA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 1.2V @ 1A
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 14V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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BD18FD0WHFP-TR datasheet?p=BD18FD0WHFP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD18FD0WHFP-TR
Hersteller: Rohm Semiconductor
Description: 2A 1.8V, FIXED OUTPUT, HIGH-ACCU
Protection Features: Over Current, Over Temperature, Short Circuit
PSRR: 55dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: HRP-5
Number of Regulators: 1
Voltage - Input (Max): 32V
Current - Quiescent (Iq): 1 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 2A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: HRP-5 (5 Leads + Tab)
Packaging: Tape & Reel (TR)
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BD18FD0WHFP-TR datasheet?p=BD18FD0WHFP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD18FD0WHFP-TR
Hersteller: Rohm Semiconductor
Description: 2A 1.8V, FIXED OUTPUT, HIGH-ACCU
Protection Features: Over Current, Over Temperature, Short Circuit
PSRR: 55dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: HRP-5
Number of Regulators: 1
Voltage - Input (Max): 32V
Current - Quiescent (Iq): 1 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 2A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: HRP-5 (5 Leads + Tab)
Packaging: Cut Tape (CT)
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BD18HC5MEFJ-ME2 bdxxhc5mefj-m-e.pdf
BD18HC5MEFJ-ME2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 1.5A 8HTSOP-J
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BD18HC5MEFJ-ME2 bdxxhc5mefj-m-e.pdf
BD18HC5MEFJ-ME2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 1.5A 8HTSOP-J
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BD18HA3MEFJ-ME2 bdxxha3mefj-m-e.pdf
BD18HA3MEFJ-ME2
Hersteller: Rohm Semiconductor
Description: IC REG LIN 1.8V 300MA 8HTSOP-J
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RB520S-40FHTE61 datasheet?p=RB520S-40FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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RB520S-403TTE61 rb520s-40[1].pdf
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY SMD
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RJ1L12CGNTLL rj1l12cgntll-e.pdf
RJ1L12CGNTLL
Hersteller: Rohm Semiconductor
Description: NCH 60V 120A POWER MOSFET: RJ1L1
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RJ1L12CGNTLL rj1l12cgntll-e.pdf
RJ1L12CGNTLL
Hersteller: Rohm Semiconductor
Description: NCH 60V 120A POWER MOSFET: RJ1L1
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RBQ30NS100AFHTL datasheet?p=RBQ30NS100AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ30NS100AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 30A LPDS
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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RBQ30NS100AFHTL datasheet?p=RBQ30NS100AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ30NS100AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 30A LPDS
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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RBQ30T45ANZC9 datasheet?p=RBQ30T45ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ30T45ANZC9
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 15A TO220FN
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Cut Tape (CT)
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RBQ30T45ANZC9 datasheet?p=RBQ30T45ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ30T45ANZC9
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 15A TO220FN
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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SCT3120AW7TL datasheet?p=SCT3120AW7&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3120AW7TL
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 21A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Power Dissipation (Max): 100W
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
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TLR2377YFVM-CTR datasheet?p=TLR2377YFVM-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
TLR2377YFVM-CTR
Hersteller: Rohm Semiconductor
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
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TLR2377YFVM-CTR datasheet?p=TLR2377YFVM-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
TLR2377YFVM-CTR
Hersteller: Rohm Semiconductor
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
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5+4.36 EUR
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RBE2EA20ATR rbe2ea20atr-e.pdf
RBE2EA20ATR
Hersteller: Rohm Semiconductor
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S
Produkt ist nicht verfügbar
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RBE2EA20ATR rbe2ea20atr-e.pdf
RBE2EA20ATR
Hersteller: Rohm Semiconductor
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S
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17+1.09 EUR
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RB551VM-40TE-17 datasheet?p=RB551VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB551VM-40TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA UMD2
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
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27+0.67 EUR
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BR25G320FVM-3GTR datasheet?p=BR25G320FVM-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR25G320FVM-3GTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Tape & Reel (TR)
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BR25G320FVM-3GTR datasheet?p=BR25G320FVM-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR25G320FVM-3GTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2707 Stücke:
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20+0.9 EUR
21+0.86 EUR
25+0.83 EUR
50+0.82 EUR
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R6020KNZC17 datasheet?p=R6020KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6020KNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Power Dissipation (Max): 68W (Tc)
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
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3+5.93 EUR
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R6020ENZ4C13 datasheet?p=R6020ENZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6020ENZ4C13
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO247
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 600 Stücke:
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Anzahl Preis
2+10.95 EUR
30+6.25 EUR
120+5.22 EUR
510+4.46 EUR
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R6020JNZC17 datasheet?p=R6020JNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6020JNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bag
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 3.5mA
auf Bestellung 296 Stücke:
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Anzahl Preis
3+5.98 EUR
10+4.82 EUR
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R6020ENZC17 datasheet?p=R6020ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6020ENZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
auf Bestellung 296 Stücke:
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Anzahl Preis
2+9.49 EUR
30+5.15 EUR
120+4.79 EUR
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R6020FNJTL datasheet?p=R6020FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6020FNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A LPT
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 304W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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R6020KNZ1C9 TO247_Inner_Structure.pdf
R6020KNZ1C9
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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R6020JNZC8
R6020JNZC8
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.2 EUR
10+9.69 EUR
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R6020ANZFL1C8 R6020ANZ.pdf
R6020ANZFL1C8
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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R6020ANZ8U7C8 R6020ANZ.pdf
R6020ANZ8U7C8
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Produkt ist nicht verfügbar
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R6020ENZM12C8 r6020enzc17-e.pdf
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
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RB095T-90NZC9 datasheet?p=RB095T-90NZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB095T-90NZC9
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 90V 6A TO220FN
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.31 EUR
50+2.66 EUR
100+2.19 EUR
500+1.85 EUR
1000+1.57 EUR
Mindestbestellmenge: 6
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BD6346FV-E2 bd6346fv-e.pdf
BD6346FV-E2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 20SSOP
Produkt ist nicht verfügbar
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BD6346FV-E2 bd6346fv-e.pdf
BD6346FV-E2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 20SSOP
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.58 EUR
10+5.91 EUR
25+5.59 EUR
100+4.84 EUR
250+4.59 EUR
500+4.12 EUR
1000+3.48 EUR
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BD63441AFU-E2 bd63441afu-e
BD63441AFU-E2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 5.5V-16V 20SSOP
Produkt ist nicht verfügbar
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BD63441AFU-E2 bd63441afu-e
BD63441AFU-E2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 5.5V-16V 20SSOP
auf Bestellung 4812 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.95 EUR
10+5.33 EUR
25+5.04 EUR
100+4.37 EUR
250+4.15 EUR
500+3.72 EUR
1000+3.14 EUR
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BD6345FV-E2 BD6345FV.pdf
BD6345FV-E2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 5.5V-17V 20SSOP
Produkt ist nicht verfügbar
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BD8621EFV-E2 BD8621EFV.pdf
BD8621EFV-E2
Hersteller: Rohm Semiconductor
Description: IC REG CTRLR TV 1OUT HTSSOP-B20
Produkt ist nicht verfügbar
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BD868D0MUF-CE2 datasheet?p=BD868D0MUF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD868D0MUF-CE2
Hersteller: Rohm Semiconductor
Description: PMIC FOR AUTOMOTIVE CAMERA. THE
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4V ~ 18V
Applications: Camera
Supplier Device Package: VQFN20FV3535
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BD868D0MUF-CE2 datasheet?p=BD868D0MUF-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD868D0MUF-CE2
Hersteller: Rohm Semiconductor
Description: PMIC FOR AUTOMOTIVE CAMERA. THE
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4V ~ 18V
Applications: Camera
Supplier Device Package: VQFN20FV3535
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.83 EUR
10+4.41 EUR
25+4.05 EUR
100+3.66 EUR
250+3.47 EUR
500+3.36 EUR
1000+3.26 EUR
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BD86123AEFJ-E2 BD86123AEFJ.pdf
BD86123AEFJ-E2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 8HTSOP-J
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 14.4V
Synchronous Rectifier: Yes
Supplier Device Package: 8-HTSOP-J
Topology: Buck
Voltage - Input (Max): 18V
Frequency - Switching: 550kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD8649EFV-E2 BD8649EFV.pdf
BD8649EFV-E2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 20HTSSOP-B
Produkt ist nicht verfügbar
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BD8668GW-E2 datasheet?p=BD8668GW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD8668GW-E2
Hersteller: Rohm Semiconductor
Description: IC BATT CHG LI-ION UCSP75M2
Current - Charging: Constant - Programmable
Battery Pack Voltage: 8.4V
Voltage - Supply (Max): 5.5V
Fault Protection: Over Current, Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Programmable Features: Current, Voltage
Supplier Device Package: 20-UCSP75M2 (2.2x2.2)
Battery Chemistry: Lithium Ion
Operating Temperature: -30°C ~ 85°C (TA)
Interface: USB
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 20-VFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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R6511ENJTL datasheet?p=R6511ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6511ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Produkt ist nicht verfügbar
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R6511ENJTL datasheet?p=R6511ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6511ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.15 EUR
10+6.41 EUR
Mindestbestellmenge: 3
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R6511KNJTL datasheet?p=R6511KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6511KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Produkt ist nicht verfügbar
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R6511KNJTL datasheet?p=R6511KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6511KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.42 EUR
10+5.4 EUR
Mindestbestellmenge: 3
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R6511END3TL1 datasheet?p=R6511END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6511END3TL1
Hersteller: Rohm Semiconductor
Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.84 EUR
Mindestbestellmenge: 2500
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R6511END3TL1 datasheet?p=R6511END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6511END3TL1
Hersteller: Rohm Semiconductor
Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 3267 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.21 EUR
10+3.72 EUR
100+2.59 EUR
500+2.11 EUR
1000+1.96 EUR
Mindestbestellmenge: 4
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BZX84C33VLYFHT116 datasheet?p=BZX84C33VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C33VLYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 33V 250MW SOT23
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.1 EUR
Mindestbestellmenge: 3000
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BZX84C33VLYFHT116 datasheet?p=BZX84C33VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C33VLYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 33V 250MW SOT23
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
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RQ5H025TNTL datasheet?p=RQ5H025TN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5H025TNTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
auf Bestellung 6000 Stücke:
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Anzahl Preis
3000+0.31 EUR
6000+0.29 EUR
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RQ5H025TNTL datasheet?p=RQ5H025TN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5H025TNTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
auf Bestellung 7577 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.3 EUR
22+0.81 EUR
100+0.52 EUR
500+0.4 EUR
1000+0.36 EUR
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2SAR512RHZGTL 2sar512rhzgtl-e.pdf
2SAR512RHZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 2A TSMT3
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.57 EUR
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2SAR512RHZGTL 2sar512rhzgtl-e.pdf
2SAR512RHZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 2A TSMT3
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
14+1.3 EUR
100+0.99 EUR
500+0.78 EUR
1000+0.63 EUR
Mindestbestellmenge: 12
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RB061QS-20T18R datasheet?p=RB061QS-20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB061QS-20T18R
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 20V 2A SMD1006
Current - Reverse Leakage @ Vr: 200 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: SMD1006
Current - Average Rectified (Io): 2A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
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