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RBQ20T65ANZC9 RBQ20T65ANZC9 Rohm Semiconductor datasheet?p=RBQ20T65ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 65V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 10 A
Current - Reverse Leakage @ Vr: 140 µA @ 65 V
Produkt ist nicht verfügbar
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ESR01MZPF3303 ESR01MZPF3303 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS
Resistance: 330 kOhms
Part Status: Active
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.2W, 1/5W
Packaging: Tape & Reel (TR)
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ESR01MZPF3303 ESR01MZPF3303 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS
Resistance: 330 kOhms
Part Status: Active
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.2W, 1/5W
Packaging: Cut Tape (CT)
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SFR03EZPF3303 SFR03EZPF3303 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 330 kOhms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Tape & Reel (TR)
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SFR03EZPF3303 SFR03EZPF3303 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 330 kOhms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Cut Tape (CT)
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BM60059FV-CE2 BM60059FV-CE2 Rohm Semiconductor datasheet?p=BM60059FV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DGTL ISO 2.5KV 1CH GT DVR 28SSOP
Part Status: Active
Pulse Width Distortion (Max): 400ns
Propagation Delay tpLH / tpHL (Max): 450ns, 450ns
Common Mode Transient Immunity (Min): 100kV/µs
Supplier Device Package: 28-SSOP-BW
Approval Agency: UL
Voltage - Isolation: 2500Vrms
Current - Output High, Low: 40µA, 160µA
Technology: Magnetic Coupling
Current - Peak Output: 1A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.315", 8.00mm Width)
Packaging: Tape & Reel (TR)
Voltage - Output Supply: 4.5V ~ 24V
Number of Channels: 1
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BM60059FV-CE2 BM60059FV-CE2 Rohm Semiconductor datasheet?p=BM60059FV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DGTL ISO 2.5KV 1CH GT DVR 28SSOP
Propagation Delay tpLH / tpHL (Max): 450ns, 450ns
Common Mode Transient Immunity (Min): 100kV/µs
Supplier Device Package: 28-SSOP-BW
Approval Agency: UL
Voltage - Isolation: 2500Vrms
Current - Output High, Low: 40µA, 160µA
Technology: Magnetic Coupling
Current - Peak Output: 1A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.315", 8.00mm Width)
Packaging: Cut Tape (CT)
Voltage - Output Supply: 4.5V ~ 24V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 400ns
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SML-D12W8WT86A SML-D12W8WT86A Rohm Semiconductor datasheet?p=SML-D12W8W(A)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED YELLOW CLEAR 1608 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 7.1mcd
Voltage - Forward (Vf) (Typ): 2V
Lens Color: Colorless
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 588nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
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SML-D12W8WT86A SML-D12W8WT86A Rohm Semiconductor datasheet?p=SML-D12W8W(A)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED YELLOW CLEAR 1608 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 7.1mcd
Voltage - Forward (Vf) (Typ): 2V
Lens Color: Colorless
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 588nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
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R6013VND3TL1 R6013VND3TL1 Rohm Semiconductor datasheet?p=R6013VND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 13A TO-252, PRESTOMOS WITH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 500µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
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R6013VND3TL1 R6013VND3TL1 Rohm Semiconductor datasheet?p=R6013VND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 13A TO-252, PRESTOMOS WITH
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 500µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
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2SAR583D3FRATL 2SAR583D3FRATL Rohm Semiconductor 2sar583d3fratl-e.pdf Description: PNP, TO-252 (DPAK), -50V -7A, PO
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2SAR583D3FRATL 2SAR583D3FRATL Rohm Semiconductor 2sar583d3fratl-e.pdf Description: PNP, TO-252 (DPAK), -50V -7A, PO
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BD81849MUV-CE2 BD81849MUV-CE2 Rohm Semiconductor datasheet?p=BD81849MUV-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: GAMMA VOLTAGE GENERATED IC WITH
Part Status: Active
Supplier Device Package: VQFN32SV5050
Current - Supply: 6mA
Applications: TFT-LCD Panels: Gamma Buffer, VCOM Driver
Voltage - Supply: 2.1V ~ 18V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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BD81849MUV-CE2 BD81849MUV-CE2 Rohm Semiconductor datasheet?p=BD81849MUV-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: GAMMA VOLTAGE GENERATED IC WITH
Part Status: Active
Supplier Device Package: VQFN32SV5050
Current - Supply: 6mA
Applications: TFT-LCD Panels: Gamma Buffer, VCOM Driver
Voltage - Supply: 2.1V ~ 18V
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 105°C (TA)
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MMBZ27VALFHT116 MMBZ27VALFHT116 Rohm Semiconductor datasheet?p=MMBZ27VALFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 22VWM 40VC SSD3
Qualification: AEC-Q101
Grade: Automotive
Part Status: Not For New Designs
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 40V
Voltage - Breakdown (Min): 25.65V
Unidirectional Channels: 1
Supplier Device Package: SSD3
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 1A
Capacitance @ Frequency: 42pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BR24S08FVM-WTR BR24S08FVM-WTR Rohm Semiconductor br24sxxx-w-e.pdf Description: IC EEPROM 8KBIT I2C 400KHZ 8MSOP
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BR24S08F-WE2 BR24S08F-WE2 Rohm Semiconductor br24sxxx-w-e.pdf Description: IC EEPROM 8KBIT I2C 400KHZ 8SOP
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SFR01MZPF2323 SFR01MZPF2323 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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SFR01MZPF2323 SFR01MZPF2323 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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BD63801EFV-E2 BD63801EFV-E2 Rohm Semiconductor datasheet?p=BD63801EFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC MTR DRV BIPLR 19-28V 24HTSSOP
Step Resolution: 1, 1/2
Motor Type - Stepper: Bipolar
Supplier Device Package: 24-HTSSOP-B
Voltage - Load: 19V ~ 28V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 19V ~ 28V
Output Configuration: Half Bridge (4)
Operating Temperature: -25°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 500mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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BD63801EFV-E2 BD63801EFV-E2 Rohm Semiconductor datasheet?p=BD63801EFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC MTR DRV BIPLR 19-28V 24HTSSOP
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Step Resolution: 1, 1/2
Motor Type - Stepper: Bipolar
Supplier Device Package: 24-HTSSOP-B
Voltage - Load: 19V ~ 28V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 19V ~ 28V
Output Configuration: Half Bridge (4)
Operating Temperature: -25°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 500mA
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RXL035N03TCR RXL035N03TCR Rohm Semiconductor datasheet?p=RXL035N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 30V 3..5A SMALL SIGNAL MOSFE
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 910mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
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RTM002P02T2L RTM002P02T2L Rohm Semiconductor RTM002P02.pdf Description: MOSFET P-CH 20V 200MA VMT3
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: VMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 150mW (Ta)
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VT6Z1T2R VT6Z1T2R Rohm Semiconductor vt6z1t2r-e.pdf Description: TRANS NPN/PNP 20V 0.2A 6VMT
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VT6Z1T2R VT6Z1T2R Rohm Semiconductor vt6z1t2r-e.pdf Description: TRANS NPN/PNP 20V 0.2A 6VMT
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QH8KA3TCR QH8KA3TCR Rohm Semiconductor datasheet?p=QH8KA3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 9A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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QH8KA3TCR QH8KA3TCR Rohm Semiconductor datasheet?p=QH8KA3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 9A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
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QH8KB6TCR QH8KB6TCR Rohm Semiconductor datasheet?p=QH8KB6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 40V 8A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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QH8KB6TCR QH8KB6TCR Rohm Semiconductor datasheet?p=QH8KB6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 40V 8A TSMT8
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 40V
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QH8JC5TCR QH8JC5TCR Rohm Semiconductor datasheet?p=QH8JC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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QH8JC5TCR QH8JC5TCR Rohm Semiconductor datasheet?p=QH8JC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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CSL0902DT1C CSL0902DT1C Rohm Semiconductor datasheet?p=CSL0902DT(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED ORANGE CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 710mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Grade: Automotive
Qualification: AEC-Q102
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CSL0902DT1C CSL0902DT1C Rohm Semiconductor datasheet?p=CSL0902DT(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 710mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Grade: Automotive
Qualification: AEC-Q102
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CSL0902DT1 CSL0902DT1 Rohm Semiconductor datasheet?p=CSL0902DT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED ORANGE CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 560mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
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CSL0902DT1 CSL0902DT1 Rohm Semiconductor datasheet?p=CSL0902DT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 560mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
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RB068VWM100TR RB068VWM100TR Rohm Semiconductor datasheet?p=RB068VWM100&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 100V 2A PMDE
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RB068VWM-60TFTR RB068VWM-60TFTR Rohm Semiconductor datasheet?p=RB068VWM-60TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 2A PMDE
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
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RB068VWM-30TFTR RB068VWM-30TFTR Rohm Semiconductor datasheet?p=RB068VWM-30TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 2A PMDE
Current - Reverse Leakage @ Vr: 600 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RB068VWM150TFTR RB068VWM150TFTR Rohm Semiconductor datasheet?p=RB068VWM150TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 150V 2A PMDE
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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RB068VWM100TFTR RB068VWM100TFTR Rohm Semiconductor datasheet?p=RB068VWM100TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 100V 2A PMDE
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RB068VWM150TR RB068VWM150TR Rohm Semiconductor datasheet?p=RB068VWM150&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 150V 2A PMDE
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 2564 Stücke:
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RB068VWM-40TFTR RB068VWM-40TFTR Rohm Semiconductor datasheet?p=RB068VWM-40TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 2A PMDE
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RB068VWM-60TR RB068VWM-60TR Rohm Semiconductor datasheet?p=RB068VWM-60&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 2A PMDE
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RB068VWM-40TR RB068VWM-40TR Rohm Semiconductor datasheet?p=RB068VWM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 2A PMDE
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RGSX5TS65HRC11 RGSX5TS65HRC11 Rohm Semiconductor datasheet?p=RGSX5TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 650V 114A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Part Status: Not For New Designs
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RGSX5TS65EHRC11 RGSX5TS65EHRC11 Rohm Semiconductor datasheet?p=RGSX5TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 650V 114A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Reverse Recovery Time (trr): 116 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RGSX5TS65EGC11 RGSX5TS65EGC11 Rohm Semiconductor datasheet?p=RGSX5TS65E&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 114A TO-247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Reverse Recovery Time (trr): 116 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 419 Stücke:
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RB480Y-90FHT2R RB480Y-90FHT2R Rohm Semiconductor datasheet?p=RB480Y-90FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOT 90V 100MA EMD4
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 90 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD4
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-75-4, SOT-543
Packaging: Tape & Reel (TR)
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RB480KTL RB480KTL Rohm Semiconductor rb480ktl-e Description: DIODE ARRAY SCHOTTKY 40V UMD4
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SML-D22YVWT86 SML-D22YVWT86 Rohm Semiconductor sml-d22-e.pdf Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
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SML-D22YVWT86 SML-D22YVWT86 Rohm Semiconductor sml-d22-e.pdf Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
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RV5A040APTCR1 RV5A040APTCR1 Rohm Semiconductor datasheet?p=RV5A040AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 4A DFN1616-6
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V, 0V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1616-8S
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWFDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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RV5A040APTCR1 RV5A040APTCR1 Rohm Semiconductor datasheet?p=RV5A040AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 4A DFN1616-6
Mounting Type: Surface Mount
Package / Case: 6-PowerWFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V, 0V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1616-8S
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
auf Bestellung 5995 Stücke:
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100+0.83 EUR
500+0.66 EUR
1000+0.58 EUR
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YFZVFHTR8.2B YFZVFHTR8.2B Rohm Semiconductor datasheet?p=YFZVFH8.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 7.99V 500MW TUMD2M
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: TUMD2M
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 7.99 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Tolerance: ±2.57%
Packaging: Tape & Reel (TR)
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YFZVFHTR8.2B YFZVFHTR8.2B Rohm Semiconductor datasheet?p=YFZVFH8.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 7.99V 500MW TUMD2M
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: TUMD2M
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 7.99 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Tolerance: ±2.57%
Packaging: Cut Tape (CT)
auf Bestellung 5574 Stücke:
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RPI-574 Rohm Semiconductor RPI-574.PDF Description: SENSOR OPT SLOT PHOTOTRAN PCB MT
Current - DC Forward (If) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 30 mA
Response Time: 10µs, 10µs
Output Configuration: Phototransistor
Operating Temperature: -25°C ~ 85°C
Mounting Type: Through Hole
Sensing Method: Through-Beam
Sensing Distance: 0.197" (5mm)
Package / Case: PCB Mount
Packaging: Bulk
Produkt ist nicht verfügbar
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RS3E075ATTB1 RS3E075ATTB1 Rohm Semiconductor rs3e075attb1-e.pdf Description: PCH -30V -7.5A MIDDLE POWER MOSF
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RS3E075ATTB1 RS3E075ATTB1 Rohm Semiconductor rs3e075attb1-e.pdf Description: PCH -30V -7.5A MIDDLE POWER MOSF
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RH6P040BHTB1 RH6P040BHTB1 Rohm Semiconductor rh6p040bhtb1-e.pdf Description: NCH 100V 40A, HSMT8, POWER MOSFE
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RBQ20T65ANZC9 datasheet?p=RBQ20T65ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ20T65ANZC9
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 65V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 10 A
Current - Reverse Leakage @ Vr: 140 µA @ 65 V
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ESR01MZPF3303 esr-e.pdf
ESR01MZPF3303
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Resistance: 330 kOhms
Part Status: Active
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.2W, 1/5W
Packaging: Tape & Reel (TR)
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ESR01MZPF3303 esr-e.pdf
ESR01MZPF3303
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Resistance: 330 kOhms
Part Status: Active
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.2W, 1/5W
Packaging: Cut Tape (CT)
auf Bestellung 10000 Stücke:
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28+0.65 EUR
32+0.55 EUR
100+0.22 EUR
1000+0.091 EUR
2500+0.083 EUR
5000+0.076 EUR
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SFR03EZPF3303 sfr-e.pdf
SFR03EZPF3303
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 330 kOhms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Tape & Reel (TR)
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5000+0.029 EUR
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SFR03EZPF3303 sfr-e.pdf
SFR03EZPF3303
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 330 kOhms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Cut Tape (CT)
auf Bestellung 7115 Stücke:
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Anzahl Preis
72+0.25 EUR
81+0.22 EUR
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1000+0.037 EUR
2500+0.032 EUR
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BM60059FV-CE2 datasheet?p=BM60059FV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM60059FV-CE2
Hersteller: Rohm Semiconductor
Description: DGTL ISO 2.5KV 1CH GT DVR 28SSOP
Part Status: Active
Pulse Width Distortion (Max): 400ns
Propagation Delay tpLH / tpHL (Max): 450ns, 450ns
Common Mode Transient Immunity (Min): 100kV/µs
Supplier Device Package: 28-SSOP-BW
Approval Agency: UL
Voltage - Isolation: 2500Vrms
Current - Output High, Low: 40µA, 160µA
Technology: Magnetic Coupling
Current - Peak Output: 1A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.315", 8.00mm Width)
Packaging: Tape & Reel (TR)
Voltage - Output Supply: 4.5V ~ 24V
Number of Channels: 1
Produkt ist nicht verfügbar
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BM60059FV-CE2 datasheet?p=BM60059FV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM60059FV-CE2
Hersteller: Rohm Semiconductor
Description: DGTL ISO 2.5KV 1CH GT DVR 28SSOP
Propagation Delay tpLH / tpHL (Max): 450ns, 450ns
Common Mode Transient Immunity (Min): 100kV/µs
Supplier Device Package: 28-SSOP-BW
Approval Agency: UL
Voltage - Isolation: 2500Vrms
Current - Output High, Low: 40µA, 160µA
Technology: Magnetic Coupling
Current - Peak Output: 1A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.315", 8.00mm Width)
Packaging: Cut Tape (CT)
Voltage - Output Supply: 4.5V ~ 24V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 400ns
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2+16.17 EUR
10+11.27 EUR
25+10.01 EUR
100+8.59 EUR
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500+7.49 EUR
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SML-D12W8WT86A datasheet?p=SML-D12W8W(A)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML-D12W8WT86A
Hersteller: Rohm Semiconductor
Description: LED YELLOW CLEAR 1608 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 7.1mcd
Voltage - Forward (Vf) (Typ): 2V
Lens Color: Colorless
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 588nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
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SML-D12W8WT86A datasheet?p=SML-D12W8W(A)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML-D12W8WT86A
Hersteller: Rohm Semiconductor
Description: LED YELLOW CLEAR 1608 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 7.1mcd
Voltage - Forward (Vf) (Typ): 2V
Lens Color: Colorless
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 588nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
auf Bestellung 2756 Stücke:
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33+0.55 EUR
49+0.37 EUR
100+0.26 EUR
500+0.21 EUR
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R6013VND3TL1 datasheet?p=R6013VND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6013VND3TL1
Hersteller: Rohm Semiconductor
Description: 600V 13A TO-252, PRESTOMOS WITH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 500µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
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R6013VND3TL1 datasheet?p=R6013VND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6013VND3TL1
Hersteller: Rohm Semiconductor
Description: 600V 13A TO-252, PRESTOMOS WITH
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 500µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
auf Bestellung 2145 Stücke:
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5+3.8 EUR
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25+2.59 EUR
100+2.32 EUR
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500+2.12 EUR
1000+2.05 EUR
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2SAR583D3FRATL 2sar583d3fratl-e.pdf
2SAR583D3FRATL
Hersteller: Rohm Semiconductor
Description: PNP, TO-252 (DPAK), -50V -7A, PO
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2SAR583D3FRATL 2sar583d3fratl-e.pdf
2SAR583D3FRATL
Hersteller: Rohm Semiconductor
Description: PNP, TO-252 (DPAK), -50V -7A, PO
auf Bestellung 2495 Stücke:
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5+4.35 EUR
10+3.9 EUR
100+3.14 EUR
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BD81849MUV-CE2 datasheet?p=BD81849MUV-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD81849MUV-CE2
Hersteller: Rohm Semiconductor
Description: GAMMA VOLTAGE GENERATED IC WITH
Part Status: Active
Supplier Device Package: VQFN32SV5050
Current - Supply: 6mA
Applications: TFT-LCD Panels: Gamma Buffer, VCOM Driver
Voltage - Supply: 2.1V ~ 18V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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BD81849MUV-CE2 datasheet?p=BD81849MUV-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD81849MUV-CE2
Hersteller: Rohm Semiconductor
Description: GAMMA VOLTAGE GENERATED IC WITH
Part Status: Active
Supplier Device Package: VQFN32SV5050
Current - Supply: 6mA
Applications: TFT-LCD Panels: Gamma Buffer, VCOM Driver
Voltage - Supply: 2.1V ~ 18V
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 105°C (TA)
auf Bestellung 2475 Stücke:
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3+6.6 EUR
10+5 EUR
25+4.6 EUR
100+4.16 EUR
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MMBZ27VALFHT116 datasheet?p=MMBZ27VALFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ27VALFHT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 22VWM 40VC SSD3
Qualification: AEC-Q101
Grade: Automotive
Part Status: Not For New Designs
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 40V
Voltage - Breakdown (Min): 25.65V
Unidirectional Channels: 1
Supplier Device Package: SSD3
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 1A
Capacitance @ Frequency: 42pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BR24S08FVM-WTR br24sxxx-w-e.pdf
BR24S08FVM-WTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 8KBIT I2C 400KHZ 8MSOP
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BR24S08F-WE2 br24sxxx-w-e.pdf
BR24S08F-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOP
Produkt ist nicht verfügbar
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SFR01MZPF2323 sfr-e.pdf
SFR01MZPF2323
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
auf Bestellung 10000 Stücke:
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Anzahl Preis
10000+0.023 EUR
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SFR01MZPF2323 sfr-e.pdf
SFR01MZPF2323
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
88+0.2 EUR
229+0.077 EUR
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BD63801EFV-E2 datasheet?p=BD63801EFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD63801EFV-E2
Hersteller: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 24HTSSOP
Step Resolution: 1, 1/2
Motor Type - Stepper: Bipolar
Supplier Device Package: 24-HTSSOP-B
Voltage - Load: 19V ~ 28V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 19V ~ 28V
Output Configuration: Half Bridge (4)
Operating Temperature: -25°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 500mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
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2000+3.49 EUR
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BD63801EFV-E2 datasheet?p=BD63801EFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD63801EFV-E2
Hersteller: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 24HTSSOP
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Step Resolution: 1, 1/2
Motor Type - Stepper: Bipolar
Supplier Device Package: 24-HTSSOP-B
Voltage - Load: 19V ~ 28V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 19V ~ 28V
Output Configuration: Half Bridge (4)
Operating Temperature: -25°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 500mA
auf Bestellung 2000 Stücke:
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3+6.88 EUR
10+5.23 EUR
25+4.81 EUR
100+4.36 EUR
250+4.14 EUR
500+4.01 EUR
1000+3.9 EUR
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RXL035N03TCR datasheet?p=RXL035N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RXL035N03TCR
Hersteller: Rohm Semiconductor
Description: NCH 30V 3..5A SMALL SIGNAL MOSFE
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 910mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
auf Bestellung 2900 Stücke:
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Anzahl Preis
11+1.67 EUR
15+1.23 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.57 EUR
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RTM002P02T2L RTM002P02.pdf
RTM002P02T2L
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 200MA VMT3
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: VMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 150mW (Ta)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.2 EUR
Mindestbestellmenge: 8000
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VT6Z1T2R vt6z1t2r-e.pdf
VT6Z1T2R
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP 20V 0.2A 6VMT
auf Bestellung 8000 Stücke:
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8000+0.17 EUR
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VT6Z1T2R vt6z1t2r-e.pdf
VT6Z1T2R
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP 20V 0.2A 6VMT
auf Bestellung 15924 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
29+0.62 EUR
100+0.39 EUR
500+0.27 EUR
1000+0.2 EUR
2000+0.18 EUR
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QH8KA3TCR datasheet?p=QH8KA3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KA3TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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QH8KA3TCR datasheet?p=QH8KA3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KA3TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 2305 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.2 EUR
13+1.43 EUR
100+1.02 EUR
500+0.79 EUR
1000+0.69 EUR
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QH8KB6TCR datasheet?p=QH8KB6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KB6TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 8A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.73 EUR
Mindestbestellmenge: 3000
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QH8KB6TCR datasheet?p=QH8KB6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KB6TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 8A TSMT8
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 40V
auf Bestellung 5950 Stücke:
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Anzahl Preis
10+1.78 EUR
13+1.45 EUR
100+1.13 EUR
500+0.96 EUR
1000+0.78 EUR
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QH8JC5TCR datasheet?p=QH8JC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8JC5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 9000 Stücke:
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Anzahl Preis
3000+0.73 EUR
6000+0.68 EUR
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QH8JC5TCR datasheet?p=QH8JC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8JC5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 11750 Stücke:
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Anzahl Preis
7+2.69 EUR
11+1.71 EUR
100+1.15 EUR
500+0.91 EUR
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CSL0902DT1C datasheet?p=CSL0902DT(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CSL0902DT1C
Hersteller: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 710mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Grade: Automotive
Qualification: AEC-Q102
Produkt ist nicht verfügbar
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CSL0902DT1C datasheet?p=CSL0902DT(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CSL0902DT1C
Hersteller: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 710mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Grade: Automotive
Qualification: AEC-Q102
auf Bestellung 668 Stücke:
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Anzahl Preis
23+0.77 EUR
33+0.54 EUR
100+0.39 EUR
500+0.32 EUR
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CSL0902DT1 datasheet?p=CSL0902DT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CSL0902DT1
Hersteller: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 560mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Produkt ist nicht verfügbar
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CSL0902DT1 datasheet?p=CSL0902DT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CSL0902DT1
Hersteller: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 560mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
auf Bestellung 1807 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
36+0.49 EUR
100+0.35 EUR
500+0.29 EUR
1000+0.27 EUR
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RB068VWM100TR datasheet?p=RB068VWM100&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM100TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 2A PMDE
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 2994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
24+0.76 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.34 EUR
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RB068VWM-60TFTR datasheet?p=RB068VWM-60TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM-60TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 2A PMDE
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
auf Bestellung 2352 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
21+0.87 EUR
100+0.59 EUR
500+0.45 EUR
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RB068VWM-30TFTR datasheet?p=RB068VWM-30TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM-30TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 2A PMDE
Current - Reverse Leakage @ Vr: 600 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 2965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
23+0.8 EUR
100+0.57 EUR
500+0.44 EUR
1000+0.4 EUR
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RB068VWM150TFTR datasheet?p=RB068VWM150TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM150TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 2A PMDE
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 2938 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
21+0.88 EUR
100+0.58 EUR
500+0.44 EUR
1000+0.4 EUR
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RB068VWM100TFTR datasheet?p=RB068VWM100TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM100TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 2A PMDE
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 4398 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
23+0.8 EUR
100+0.57 EUR
500+0.44 EUR
1000+0.4 EUR
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RB068VWM150TR datasheet?p=RB068VWM150&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM150TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 2A PMDE
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 2564 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
23+0.77 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
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RB068VWM-40TFTR datasheet?p=RB068VWM-40TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM-40TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDE
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 1513 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
20+0.89 EUR
100+0.57 EUR
500+0.44 EUR
1000+0.4 EUR
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RB068VWM-60TR datasheet?p=RB068VWM-60&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM-60TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 2A PMDE
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 5402 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 14
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RB068VWM-40TR datasheet?p=RB068VWM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM-40TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDE
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 5744 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
24+0.76 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.34 EUR
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RGSX5TS65HRC11 datasheet?p=RGSX5TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGSX5TS65HRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 114A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Part Status: Not For New Designs
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 393 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.86 EUR
30+7 EUR
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RGSX5TS65EHRC11 datasheet?p=RGSX5TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGSX5TS65EHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 114A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Reverse Recovery Time (trr): 116 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 390 Stücke:
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Anzahl Preis
2+12.8 EUR
30+10.21 EUR
120+9.46 EUR
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RGSX5TS65EGC11 datasheet?p=RGSX5TS65E&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGSX5TS65EGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 114A TO-247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Reverse Recovery Time (trr): 116 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 419 Stücke:
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3+8.29 EUR
30+4.67 EUR
120+3.87 EUR
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RB480Y-90FHT2R datasheet?p=RB480Y-90FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB480Y-90FHT2R
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 90V 100MA EMD4
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 90 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD4
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-75-4, SOT-543
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB480KTL rb480ktl-e
RB480KTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 40V UMD4
Produkt ist nicht verfügbar
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SML-D22YVWT86 sml-d22-e.pdf
SML-D22YVWT86
Hersteller: Rohm Semiconductor
Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
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SML-D22YVWT86 sml-d22-e.pdf
SML-D22YVWT86
Hersteller: Rohm Semiconductor
Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
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16+1.16 EUR
23+0.77 EUR
100+0.51 EUR
1000+0.39 EUR
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RV5A040APTCR1 datasheet?p=RV5A040AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RV5A040APTCR1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 4A DFN1616-6
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V, 0V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1616-8S
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWFDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.52 EUR
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RV5A040APTCR1 datasheet?p=RV5A040AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RV5A040APTCR1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 4A DFN1616-6
Mounting Type: Surface Mount
Package / Case: 6-PowerWFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V, 0V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1616-8S
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
auf Bestellung 5995 Stücke:
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10+1.81 EUR
15+1.23 EUR
100+0.83 EUR
500+0.66 EUR
1000+0.58 EUR
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YFZVFHTR8.2B datasheet?p=YFZVFH8.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
YFZVFHTR8.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 7.99V 500MW TUMD2M
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: TUMD2M
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 7.99 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Tolerance: ±2.57%
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.15 EUR
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YFZVFHTR8.2B datasheet?p=YFZVFH8.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
YFZVFHTR8.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 7.99V 500MW TUMD2M
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: TUMD2M
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 7.99 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Tolerance: ±2.57%
Packaging: Cut Tape (CT)
auf Bestellung 5574 Stücke:
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24+0.76 EUR
39+0.46 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.19 EUR
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RPI-574 RPI-574.PDF
Hersteller: Rohm Semiconductor
Description: SENSOR OPT SLOT PHOTOTRAN PCB MT
Current - DC Forward (If) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 30 mA
Response Time: 10µs, 10µs
Output Configuration: Phototransistor
Operating Temperature: -25°C ~ 85°C
Mounting Type: Through Hole
Sensing Method: Through-Beam
Sensing Distance: 0.197" (5mm)
Package / Case: PCB Mount
Packaging: Bulk
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RS3E075ATTB1 rs3e075attb1-e.pdf
RS3E075ATTB1
Hersteller: Rohm Semiconductor
Description: PCH -30V -7.5A MIDDLE POWER MOSF
Produkt ist nicht verfügbar
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RS3E075ATTB1 rs3e075attb1-e.pdf
RS3E075ATTB1
Hersteller: Rohm Semiconductor
Description: PCH -30V -7.5A MIDDLE POWER MOSF
auf Bestellung 2485 Stücke:
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10+1.88 EUR
11+1.68 EUR
100+1.31 EUR
500+1.09 EUR
1000+0.86 EUR
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RH6P040BHTB1 rh6p040bhtb1-e.pdf
RH6P040BHTB1
Hersteller: Rohm Semiconductor
Description: NCH 100V 40A, HSMT8, POWER MOSFE
auf Bestellung 3000 Stücke:
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3000+1.35 EUR
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