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SDR03EZPD30R0 SDR03EZPD30R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 30 Ohms
auf Bestellung 9380 Stücke:
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56+0.32 EUR
102+0.17 EUR
149+0.12 EUR
173+0.1 EUR
500+0.075 EUR
1000+0.066 EUR
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SDR03EZPD3003 SDR03EZPD3003 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 300 kOhms
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5000+0.052 EUR
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SDR03EZPD3003 SDR03EZPD3003 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 300 kOhms
auf Bestellung 8620 Stücke:
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56+0.32 EUR
102+0.17 EUR
149+0.12 EUR
173+0.1 EUR
500+0.075 EUR
1000+0.066 EUR
Mindestbestellmenge: 56
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LM2903EYFJ-CE2 LM2903EYFJ-CE2 Rohm Semiconductor datasheet?p=LM2903EYFJ-C&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: IC COMPARATOR 2 GEN PUR 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Collector, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-SOP-J
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
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LM2903EYFJ-CE2 LM2903EYFJ-CE2 Rohm Semiconductor datasheet?p=LM2903EYFJ-C&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: IC COMPARATOR 2 GEN PUR 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Collector, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-SOP-J
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
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10+2.15 EUR
25+2.04 EUR
100+1.68 EUR
250+1.57 EUR
500+1.39 EUR
1000+1.1 EUR
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LM2903EYFVM-CTR LM2903EYFVM-CTR Rohm Semiconductor datasheet?p=LM2903EYFVM-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Produkt ist nicht verfügbar
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LM2903EYFVM-CTR LM2903EYFVM-CTR Rohm Semiconductor datasheet?p=LM2903EYFVM-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
auf Bestellung 2990 Stücke:
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7+2.57 EUR
10+2.3 EUR
25+2.18 EUR
100+1.79 EUR
250+1.67 EUR
500+1.48 EUR
1000+1.17 EUR
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LTR100JZPF2202 Rohm Semiconductor ltr-e.pdf Description: HIGH POWER CHIP RESISTOR: HIGH-P
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LTR100JZPF2202 Rohm Semiconductor ltr-e.pdf Description: HIGH POWER CHIP RESISTOR: HIGH-P
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ML620Q134B-NNNTD07GL Rohm Semiconductor ML620Q131B-36B_9-28-21.pdf Description: IC
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ML620Q136B-NNNTD07FL Rohm Semiconductor ML620Q131B-36B_9-28-21.pdf Description: IC
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ML620Q135B-NNNTD07GL Rohm Semiconductor ML620Q131B-36B_9-28-21.pdf Description: IC
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ML620Q135B-NNNTD07FL Rohm Semiconductor ML620Q131B-36B_9-28-21.pdf Description: IC
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ML620Q134B-NNNTD07FL Rohm Semiconductor ML620Q131B-36B_9-28-21.pdf Description: IC
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R6504KNJTL R6504KNJTL Rohm Semiconductor datasheet?p=R6504KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 4A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 130µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
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R6504KNJTL R6504KNJTL Rohm Semiconductor datasheet?p=R6504KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 4A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 130µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 72 Stücke:
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10+3.06 EUR
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R6504ENJTL R6504ENJTL Rohm Semiconductor datasheet?p=R6504ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 4A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
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R6504ENJTL R6504ENJTL Rohm Semiconductor datasheet?p=R6504ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 4A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
auf Bestellung 92 Stücke:
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10+3.06 EUR
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R6515KNJTL R6515KNJTL Rohm Semiconductor datasheet?p=R6515KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 15A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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R6515KNJTL R6515KNJTL Rohm Semiconductor datasheet?p=R6515KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 15A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
auf Bestellung 80 Stücke:
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R6507KNJTL R6507KNJTL Rohm Semiconductor datasheet?p=R6507KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 7A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 200µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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R6507KNJTL R6507KNJTL Rohm Semiconductor datasheet?p=R6507KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 7A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 200µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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R6509ENJTL R6509ENJTL Rohm Semiconductor datasheet?p=R6509ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 9A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
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R6509ENJTL R6509ENJTL Rohm Semiconductor datasheet?p=R6509ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 9A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
auf Bestellung 88 Stücke:
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SFR01MZPJ150 SFR01MZPJ150 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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SFR01MZPJ150 SFR01MZPJ150 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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1000+0.027 EUR
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SFR03EZPJ150 SFR03EZPJ150 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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SFR03EZPJ150 SFR03EZPJ150 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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MNR04MRAPJ150 MNR04MRAPJ150 Rohm Semiconductor MNR04_dim1.jpg Description: RES ARRAY 4 RES 15 OHM 0804
Packaging: Cut Tape (CT)
Resistance (Ohms): 15
Tolerance: ±5%
Power Per Element: 62.5mW
Circuit Type: Isolated
Number of Pins: 8
Package / Case: 0804, Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.039" W (2.00mm x 1.00mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C
Height - Seated (Max): 0.020" (0.50mm)
Number of Resistors: 4
Produkt ist nicht verfügbar
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RB168VAM-30TR RB168VAM-30TR Rohm Semiconductor rb168vam-30tr-e.pdf Description: DIODE SCHOTTKY 30V 1A TUMD2M
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RB168VAM-30TR RB168VAM-30TR Rohm Semiconductor rb168vam-30tr-e.pdf Description: DIODE SCHOTTKY 30V 1A TUMD2M
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SDR10EZPJ2R4 SDR10EZPJ2R4 Rohm Semiconductor sdr-e.pdf Description: RES 2.4 OHM 5% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 2.4 Ohms
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SDR10EZPJ2R4 SDR10EZPJ2R4 Rohm Semiconductor sdr-e.pdf Description: RES 2.4 OHM 5% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 2.4 Ohms
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46+0.39 EUR
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SDR03EZPJ2R4 SDR03EZPJ2R4 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPJ2R4 SDR03EZPJ2R4 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SFR03EZPJ2R4 SFR03EZPJ2R4 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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SFR03EZPJ2R4 SFR03EZPJ2R4 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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RBR20T60ANZC9 RBR20T60ANZC9 Rohm Semiconductor datasheet?p=RBR20T60ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 60V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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RBQ10RSM65BTL1 RBQ10RSM65BTL1 Rohm Semiconductor datasheet?p=RBQ10RSM65B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Produkt ist nicht verfügbar
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RBQ10RSM65BTL1 RBQ10RSM65BTL1 Rohm Semiconductor datasheet?p=RBQ10RSM65B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
auf Bestellung 1476 Stücke:
Lieferzeit 10-14 Tag (e)
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500+0.92 EUR
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RBQ10RSM65BTFTL1 RBQ10RSM65BTFTL1 Rohm Semiconductor datasheet?p=RBQ10RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RBQ10RSM65BTFTL1 RBQ10RSM65BTFTL1 Rohm Semiconductor datasheet?p=RBQ10RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Qualification: AEC-Q101
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10+1.89 EUR
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500+1.01 EUR
1000+0.92 EUR
2000+0.85 EUR
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RBQ5RSM65BTL1 RBQ5RSM65BTL1 Rohm Semiconductor datasheet?p=RBQ5RSM65B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RBQ5RSM65BTL1 RBQ5RSM65BTL1 Rohm Semiconductor datasheet?p=RBQ5RSM65B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
auf Bestellung 3967 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.41 EUR
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RBQ3RSM65BTFTL1 RBQ3RSM65BTFTL1 Rohm Semiconductor datasheet?p=RBQ3RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.71 EUR
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RBQ3RSM65BTFTL1 RBQ3RSM65BTFTL1 Rohm Semiconductor datasheet?p=RBQ3RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
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500+0.92 EUR
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RBQ5RSM65BTFTL1 RBQ5RSM65BTFTL1 Rohm Semiconductor datasheet?p=RBQ5RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.71 EUR
Mindestbestellmenge: 4000
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RBQ5RSM65BTFTL1 RBQ5RSM65BTFTL1 Rohm Semiconductor datasheet?p=RBQ5RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
11+1.71 EUR
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Mindestbestellmenge: 11
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RBQ3RSM65BTL1 RBQ3RSM65BTL1 Rohm Semiconductor datasheet?p=RBQ3RSM65B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RBQ3RSM65BTL1 RBQ3RSM65BTL1 Rohm Semiconductor datasheet?p=RBQ3RSM65B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
auf Bestellung 3990 Stücke:
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13+1.41 EUR
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500+0.77 EUR
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2000+0.59 EUR
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DTC143EE3HZGTL DTC143EE3HZGTL Rohm Semiconductor datasheet?p=DTC143EE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTC143EE3HZGTL DTC143EE3HZGTL Rohm Semiconductor datasheet?p=DTC143EE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 2180 Stücke:
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36+0.49 EUR
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500+0.14 EUR
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RB706F-40T106 RB706F-40T106 Rohm Semiconductor rb706f-40t106-e.pdf Description: DIODE ARR SCHOTT 40V 30MA UMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30mA
Supplier Device Package: UMD3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
auf Bestellung 15000 Stücke:
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3000+0.22 EUR
6000+0.21 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000
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UMZ30NT106 UMZ30NT106 Rohm Semiconductor umz30n.pdf Description: ZENER ARRAYS FOR TERMINAL PROTEC
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UMZ30NT106 UMZ30NT106 Rohm Semiconductor umz30n.pdf Description: ZENER ARRAYS FOR TERMINAL PROTEC
auf Bestellung 2995 Stücke:
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19+0.93 EUR
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100+0.52 EUR
500+0.39 EUR
1000+0.29 EUR
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DA228UMTL DA228UMTL Rohm Semiconductor datasheet?p=DA228UM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
Produkt ist nicht verfügbar
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DA228UMTL DA228UMTL Rohm Semiconductor datasheet?p=DA228UM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
auf Bestellung 2575 Stücke:
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30+0.6 EUR
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500+0.26 EUR
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DA204UMTL DA204UMTL Rohm Semiconductor datasheet?p=DA204UM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 20V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
auf Bestellung 72 Stücke:
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33+0.55 EUR
60+0.3 EUR
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RB715UMTL RB715UMTL Rohm Semiconductor datasheet?p=RB715UM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 40V 30MA UMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
auf Bestellung 3000 Stücke:
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3000+0.074 EUR
Mindestbestellmenge: 3000
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RB715UMTL RB715UMTL Rohm Semiconductor datasheet?p=RB715UM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 40V 30MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
auf Bestellung 3988 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
59+0.3 EUR
119+0.15 EUR
500+0.12 EUR
1000+0.086 EUR
Mindestbestellmenge: 39
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SDR03EZPD30R0 sdr-e.pdf
SDR03EZPD30R0
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 30 Ohms
auf Bestellung 9380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
102+0.17 EUR
149+0.12 EUR
173+0.1 EUR
500+0.075 EUR
1000+0.066 EUR
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SDR03EZPD3003 sdr-e.pdf
SDR03EZPD3003
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 300 kOhms
auf Bestellung 5000 Stücke:
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Anzahl Preis
5000+0.052 EUR
Mindestbestellmenge: 5000
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SDR03EZPD3003 sdr-e.pdf
SDR03EZPD3003
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 300 kOhms
auf Bestellung 8620 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
102+0.17 EUR
149+0.12 EUR
173+0.1 EUR
500+0.075 EUR
1000+0.066 EUR
Mindestbestellmenge: 56
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LM2903EYFJ-CE2 datasheet?p=LM2903EYFJ-C&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
LM2903EYFJ-CE2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2 GEN PUR 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Collector, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-SOP-J
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+1.02 EUR
Mindestbestellmenge: 2500
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LM2903EYFJ-CE2 datasheet?p=LM2903EYFJ-C&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
LM2903EYFJ-CE2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2 GEN PUR 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Collector, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-SOP-J
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
10+2.15 EUR
25+2.04 EUR
100+1.68 EUR
250+1.57 EUR
500+1.39 EUR
1000+1.1 EUR
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LM2903EYFVM-CTR datasheet?p=LM2903EYFVM-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM2903EYFVM-CTR
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Produkt ist nicht verfügbar
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LM2903EYFVM-CTR datasheet?p=LM2903EYFVM-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM2903EYFVM-CTR
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.57 EUR
10+2.3 EUR
25+2.18 EUR
100+1.79 EUR
250+1.67 EUR
500+1.48 EUR
1000+1.17 EUR
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LTR100JZPF2202 ltr-e.pdf
Hersteller: Rohm Semiconductor
Description: HIGH POWER CHIP RESISTOR: HIGH-P
Produkt ist nicht verfügbar
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LTR100JZPF2202 ltr-e.pdf
Hersteller: Rohm Semiconductor
Description: HIGH POWER CHIP RESISTOR: HIGH-P
Produkt ist nicht verfügbar
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ML620Q134B-NNNTD07GL ML620Q131B-36B_9-28-21.pdf
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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ML620Q136B-NNNTD07FL ML620Q131B-36B_9-28-21.pdf
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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ML620Q135B-NNNTD07GL ML620Q131B-36B_9-28-21.pdf
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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ML620Q135B-NNNTD07FL ML620Q131B-36B_9-28-21.pdf
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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ML620Q134B-NNNTD07FL ML620Q131B-36B_9-28-21.pdf
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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R6504KNJTL datasheet?p=R6504KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6504KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 4A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 130µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Produkt ist nicht verfügbar
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R6504KNJTL datasheet?p=R6504KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6504KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 4A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 130µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.68 EUR
10+3.06 EUR
Mindestbestellmenge: 5
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R6504ENJTL datasheet?p=R6504ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6504ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 4A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Produkt ist nicht verfügbar
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R6504ENJTL datasheet?p=R6504ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6504ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 4A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
auf Bestellung 92 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.68 EUR
10+3.06 EUR
Mindestbestellmenge: 5
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R6515KNJTL datasheet?p=R6515KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6515KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 15A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
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R6515KNJTL datasheet?p=R6515KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6515KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 15A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.49 EUR
10+7.04 EUR
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R6507KNJTL datasheet?p=R6507KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6507KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 7A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 200µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Produkt ist nicht verfügbar
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R6507KNJTL datasheet?p=R6507KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6507KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 7A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 200µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.95 EUR
10+4.57 EUR
Mindestbestellmenge: 3
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R6509ENJTL datasheet?p=R6509ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6509ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 9A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Produkt ist nicht verfügbar
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R6509ENJTL datasheet?p=R6509ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6509ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 9A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.28 EUR
10+4.43 EUR
Mindestbestellmenge: 4
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SFR01MZPJ150 sfr-e.pdf
SFR01MZPJ150
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
auf Bestellung 10000 Stücke:
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Anzahl Preis
10000+0.019 EUR
Mindestbestellmenge: 10000
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SFR01MZPJ150 sfr-e.pdf
SFR01MZPJ150
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
110+0.16 EUR
289+0.061 EUR
1000+0.027 EUR
2500+0.023 EUR
5000+0.021 EUR
Mindestbestellmenge: 100
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SFR03EZPJ150 sfr-e.pdf
SFR03EZPJ150
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.021 EUR
Mindestbestellmenge: 5000
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SFR03EZPJ150 sfr-e.pdf
SFR03EZPJ150
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
auf Bestellung 9790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
110+0.16 EUR
289+0.061 EUR
1000+0.027 EUR
2500+0.023 EUR
Mindestbestellmenge: 100
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MNR04MRAPJ150 MNR04_dim1.jpg
MNR04MRAPJ150
Hersteller: Rohm Semiconductor
Description: RES ARRAY 4 RES 15 OHM 0804
Packaging: Cut Tape (CT)
Resistance (Ohms): 15
Tolerance: ±5%
Power Per Element: 62.5mW
Circuit Type: Isolated
Number of Pins: 8
Package / Case: 0804, Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.039" W (2.00mm x 1.00mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C
Height - Seated (Max): 0.020" (0.50mm)
Number of Resistors: 4
Produkt ist nicht verfügbar
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RB168VAM-30TR rb168vam-30tr-e.pdf
RB168VAM-30TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Produkt ist nicht verfügbar
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RB168VAM-30TR rb168vam-30tr-e.pdf
RB168VAM-30TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
auf Bestellung 695 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
34+0.52 EUR
100+0.35 EUR
500+0.27 EUR
Mindestbestellmenge: 28
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SDR10EZPJ2R4 sdr-e.pdf
SDR10EZPJ2R4
Hersteller: Rohm Semiconductor
Description: RES 2.4 OHM 5% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 2.4 Ohms
auf Bestellung 5000 Stücke:
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Anzahl Preis
5000+0.045 EUR
Mindestbestellmenge: 5000
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SDR10EZPJ2R4 sdr-e.pdf
SDR10EZPJ2R4
Hersteller: Rohm Semiconductor
Description: RES 2.4 OHM 5% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 2.4 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
53+0.33 EUR
136+0.13 EUR
1000+0.054 EUR
2500+0.05 EUR
Mindestbestellmenge: 46
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SDR03EZPJ2R4 sdr-e.pdf
SDR03EZPJ2R4
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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Anzahl Preis
5000+0.021 EUR
Mindestbestellmenge: 5000
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SDR03EZPJ2R4 sdr-e.pdf
SDR03EZPJ2R4
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
110+0.16 EUR
289+0.061 EUR
1000+0.027 EUR
2500+0.023 EUR
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SFR03EZPJ2R4 sfr-e.pdf
SFR03EZPJ2R4
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
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Anzahl Preis
5000+0.02 EUR
Mindestbestellmenge: 5000
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SFR03EZPJ2R4 sfr-e.pdf
SFR03EZPJ2R4
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
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Anzahl Preis
112+0.16 EUR
295+0.06 EUR
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RBR20T60ANZC9 datasheet?p=RBR20T60ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20T60ANZC9
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 60V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
auf Bestellung 3 Stücke:
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RBQ10RSM65BTL1 datasheet?p=RBQ10RSM65B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10RSM65BTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Produkt ist nicht verfügbar
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RBQ10RSM65BTL1 datasheet?p=RBQ10RSM65B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10RSM65BTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
auf Bestellung 1476 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.75 EUR
11+1.75 EUR
100+1.17 EUR
500+0.92 EUR
1000+0.84 EUR
Mindestbestellmenge: 7
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RBQ10RSM65BTFTL1 datasheet?p=RBQ10RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10RSM65BTFTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RBQ10RSM65BTFTL1 datasheet?p=RBQ10RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10RSM65BTFTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Qualification: AEC-Q101
auf Bestellung 3839 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.97 EUR
10+1.89 EUR
100+1.28 EUR
500+1.01 EUR
1000+0.92 EUR
2000+0.85 EUR
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RBQ5RSM65BTL1 datasheet?p=RBQ5RSM65B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ5RSM65BTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Produkt ist nicht verfügbar
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RBQ5RSM65BTL1 datasheet?p=RBQ5RSM65B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ5RSM65BTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
auf Bestellung 3967 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
16+1.16 EUR
100+0.9 EUR
500+0.77 EUR
1000+0.62 EUR
2000+0.59 EUR
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RBQ3RSM65BTFTL1 datasheet?p=RBQ3RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ3RSM65BTFTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.71 EUR
Mindestbestellmenge: 4000
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RBQ3RSM65BTFTL1 datasheet?p=RBQ3RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ3RSM65BTFTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
13+1.39 EUR
100+1.09 EUR
500+0.92 EUR
1000+0.75 EUR
2000+0.71 EUR
Mindestbestellmenge: 11
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RBQ5RSM65BTFTL1 datasheet?p=RBQ5RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ5RSM65BTFTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.71 EUR
Mindestbestellmenge: 4000
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RBQ5RSM65BTFTL1 datasheet?p=RBQ5RSM65BTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ5RSM65BTFTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
13+1.39 EUR
100+1.09 EUR
500+0.92 EUR
1000+0.75 EUR
2000+0.71 EUR
Mindestbestellmenge: 11
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RBQ3RSM65BTL1 datasheet?p=RBQ3RSM65B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ3RSM65BTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Produkt ist nicht verfügbar
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RBQ3RSM65BTL1 datasheet?p=RBQ3RSM65B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ3RSM65BTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 65V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
auf Bestellung 3990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
16+1.16 EUR
100+0.9 EUR
500+0.77 EUR
1000+0.62 EUR
2000+0.59 EUR
Mindestbestellmenge: 13
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DTC143EE3HZGTL datasheet?p=DTC143EE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC143EE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTC143EE3HZGTL datasheet?p=DTC143EE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC143EE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 2180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
59+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 36
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RB706F-40T106 rb706f-40t106-e.pdf
RB706F-40T106
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 30MA UMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30mA
Supplier Device Package: UMD3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
6000+0.21 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000
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UMZ30NT106 umz30n.pdf
UMZ30NT106
Hersteller: Rohm Semiconductor
Description: ZENER ARRAYS FOR TERMINAL PROTEC
Produkt ist nicht verfügbar
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UMZ30NT106 umz30n.pdf
UMZ30NT106
Hersteller: Rohm Semiconductor
Description: ZENER ARRAYS FOR TERMINAL PROTEC
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
24+0.76 EUR
100+0.52 EUR
500+0.39 EUR
1000+0.29 EUR
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DA228UMTL datasheet?p=DA228UM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DA228UMTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
Produkt ist nicht verfügbar
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DA228UMTL datasheet?p=DA228UM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DA228UMTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
auf Bestellung 2575 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
38+0.47 EUR
100+0.28 EUR
500+0.26 EUR
1000+0.18 EUR
Mindestbestellmenge: 30
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DA204UMTL datasheet?p=DA204UM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DA204UMTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 20V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
auf Bestellung 72 Stücke:
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Anzahl Preis
33+0.55 EUR
60+0.3 EUR
Mindestbestellmenge: 33
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RB715UMTL datasheet?p=RB715UM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB715UMTL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 30MA UMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
auf Bestellung 3000 Stücke:
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Anzahl Preis
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RB715UMTL datasheet?p=RB715UM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB715UMTL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 30MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
auf Bestellung 3988 Stücke:
Lieferzeit 10-14 Tag (e)
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39+0.46 EUR
59+0.3 EUR
119+0.15 EUR
500+0.12 EUR
1000+0.086 EUR
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