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SMLA12BNTT86 Rohm Semiconductor Description: LED INDICATION SMD
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BD25HC0MEFJ-LBH2 BD25HC0MEFJ-LBH2 Rohm Semiconductor datasheet?p=BD25HC0MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 2.5V 1A 8HTSOP
Current - Supply (Max): 1.2 mA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 1.2V @ 1A
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 8V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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BD25HC0MEFJ-LBH2 BD25HC0MEFJ-LBH2 Rohm Semiconductor datasheet?p=BD25HC0MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 2.5V 1A 8HTSOP
Current - Supply (Max): 1.2 mA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 1.2V @ 1A
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 8V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
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BD25HA3MEFJ-LBH2 BD25HA3MEFJ-LBH2 Rohm Semiconductor datasheet?p=BD25HA3MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 2.5V 300MA 8HTSOP
Current - Supply (Max): 1.2 mA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 1.2V @ 300mA
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 8V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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BD25HA3MEFJ-LBH2 BD25HA3MEFJ-LBH2 Rohm Semiconductor datasheet?p=BD25HA3MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 2.5V 300MA 8HTSOP
Current - Supply (Max): 1.2 mA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 1.2V @ 300mA
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 8V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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PSR400ITQFC0L20 PSR400ITQFC0L20 Rohm Semiconductor psr-e.pdf Description: RES 200 UOHM 1% 12W 3920
Resistance: 200 µOhms
Part Status: Active
Height - Seated (Max): 0.081" (2.05mm)
Supplier Device Package: 3920
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -65°C ~ 175°C
Composition: Metal Element
Size / Dimension: 0.394" L x 0.205" W (10.00mm x 5.20mm)
Temperature Coefficient: 75/ +175ppm/°C
Package / Case: 3920 (1052 Metric)
Features: Automotive AEC-Q200, Current Sense
Tolerance: ±1%
Power (Watts): 12W
Packaging: Tape & Reel (TR)
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PSR400ITQFC0L20 PSR400ITQFC0L20 Rohm Semiconductor psr-e.pdf Description: RES 200 UOHM 1% 12W 3920
Resistance: 200 µOhms
Part Status: Active
Height - Seated (Max): 0.081" (2.05mm)
Supplier Device Package: 3920
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -65°C ~ 175°C
Composition: Metal Element
Size / Dimension: 0.394" L x 0.205" W (10.00mm x 5.20mm)
Temperature Coefficient: 75/ +175ppm/°C
Package / Case: 3920 (1052 Metric)
Features: Automotive AEC-Q200, Current Sense
Tolerance: ±1%
Power (Watts): 12W
Packaging: Cut Tape (CT)
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SDR03EZPF1470 SDR03EZPF1470 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPF1470 SDR03EZPF1470 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPJ243 SDR03EZPJ243 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 24 kOhms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.3W
Packaging: Tape & Reel (TR)
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SDR03EZPJ243 SDR03EZPJ243 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 24 kOhms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.3W
Packaging: Cut Tape (CT)
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SDR03EZPF13R0 SDR03EZPF13R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPF13R0 SDR03EZPF13R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPD4701 SDR03EZPD4701 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPD4701 SDR03EZPD4701 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPD2741 SDR03EZPD2741 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPD2741 SDR03EZPD2741 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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BAV70HMFHT116 BAV70HMFHT116 Rohm Semiconductor bav70hmfht116-e.pdf Description: DIODE ARRAY GP 80V 215MA SSD3
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SSD3
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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RB411VAM-50TR RB411VAM-50TR Rohm Semiconductor rb411vam-50tr-e.pdf Description: DIODE SCHOTTKY 20V 500MA TUMD2M
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RB411VAM-50TR RB411VAM-50TR Rohm Semiconductor rb411vam-50tr-e.pdf Description: DIODE SCHOTTKY 20V 500MA TUMD2M
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SML-D13UWT86A SML-D13UWT86A Rohm Semiconductor sml-d13x-e.pdf Description: MINI-MOLD CHIP LED: ROHM'S CHIP
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SML-D13UWT86A SML-D13UWT86A Rohm Semiconductor sml-d13x-e.pdf Description: MINI-MOLD CHIP LED: ROHM'S CHIP
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RD3H160SPTL1 RD3H160SPTL1 Rohm Semiconductor datasheet?p=RD3H160SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 45V 16A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
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RD3H160SPTL1 RD3H160SPTL1 Rohm Semiconductor datasheet?p=RD3H160SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 45V 16A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
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R6030KNZ4C13 R6030KNZ4C13 Rohm Semiconductor datasheet?p=R6030KNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 305W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
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R6035KNZ4C13 Rohm Semiconductor datasheet?p=R6035KNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
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RB095T-40NZC9 RB095T-40NZC9 Rohm Semiconductor datasheet?p=RB095T-40NZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 40V 6A TO220FN
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 6A
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RB095T-90 RB095T-90 Rohm Semiconductor datasheet?p=RB095T-90&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 90V 3A TO220FN
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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SDR10EZPF1003 Rohm Semiconductor sdr-e.pdf Description: RES 100K OHM 1% 1/2W 0805
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SDR10EZPF1003 Rohm Semiconductor sdr-e.pdf Description: RES 100K OHM 1% 1/2W 0805
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1000+0.069 EUR
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RB085BGE-30TL RB085BGE-30TL Rohm Semiconductor datasheet?p=RB085BGE-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 30V 10A TO252
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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RB085BGE-30TL RB085BGE-30TL Rohm Semiconductor datasheet?p=RB085BGE-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 30V 10A TO252
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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BD4958G-TR BD4958G-TR Rohm Semiconductor bd48xxg-e.pdf Description: IC RESET CMOS 5.8V 5SSOP
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BD4958G-TR BD4958G-TR Rohm Semiconductor bd48xxg-e.pdf Description: IC RESET CMOS 5.8V 5SSOP
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1000+0.3 EUR
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RBQ10BM65AFHTL RBQ10BM65AFHTL Rohm Semiconductor datasheet?p=RBQ10BM65AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
Produkt ist nicht verfügbar
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RBQ10BM65AFHTL RBQ10BM65AFHTL Rohm Semiconductor datasheet?p=RBQ10BM65AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
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100+1.05 EUR
500+0.86 EUR
1000+0.68 EUR
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RBQ10T45ANZC9 RBQ10T45ANZC9 Rohm Semiconductor datasheet?p=RBQ10T45ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: RBQ10T45ANZ IS LOW IR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 45 V
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500+1.1 EUR
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RBQ10T65ANZC9 RBQ10T65ANZC9 Rohm Semiconductor datasheet?p=RBQ10T65ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 65V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Produkt ist nicht verfügbar
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RBQ10NS45ATL RBQ10NS45ATL Rohm Semiconductor rbq10ns45atl-e.pdf Description: SCHOTTKY BARRIER DIODE
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RBQ10NS45ATL RBQ10NS45ATL Rohm Semiconductor rbq10ns45atl-e.pdf Description: SCHOTTKY BARRIER DIODE
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RBQ10NS65AFHTL RBQ10NS65AFHTL Rohm Semiconductor datasheet?p=RBQ10NS65AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RBQ10NS65AFHTL RBQ10NS65AFHTL Rohm Semiconductor datasheet?p=RBQ10NS65AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RBQ10NS65ATL RBQ10NS65ATL Rohm Semiconductor datasheet?p=RBQ10NS65A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RBQ10NS65ATL RBQ10NS65ATL Rohm Semiconductor datasheet?p=RBQ10NS65A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RBQ10NS45AFHTL RBQ10NS45AFHTL Rohm Semiconductor rbq10ns45afhtl-e.pdf Description: DIODE (RECTIFIER FRD) 45V-VRM 45
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RBQ10NS45AFHTL RBQ10NS45AFHTL Rohm Semiconductor rbq10ns45afhtl-e.pdf Description: DIODE (RECTIFIER FRD) 45V-VRM 45
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R6015FNJTL R6015FNJTL Rohm Semiconductor datasheet?p=R6015FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 15A LPT
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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R6015FNX R6015FNX Rohm Semiconductor datasheet?p=R6015FNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 15A TO-220FM
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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BSM300C12P3E201 BSM300C12P3E201 Rohm Semiconductor datasheet?p=BSM300C12P3E201&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 1200V 300A MODULE
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -4V
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 5.6V @ 80mA
Power Dissipation (Max): 1360W (Tc)
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
FET Type: N-Channel
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RB521VM-30TE-17 RB521VM-30TE-17 Rohm Semiconductor datasheet?p=RB521VM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 200MA UMD2
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
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6000+0.067 EUR
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RB521VM-30TE-17 RB521VM-30TE-17 Rohm Semiconductor datasheet?p=RB521VM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 200MA UMD2
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
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500+0.12 EUR
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RB521CM-40T2R RB521CM-40T2R Rohm Semiconductor datasheet?p=RB521CM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 100MAVMN2M
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: VMN2M (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 8000 Stücke:
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RB521CM-40T2R RB521CM-40T2R Rohm Semiconductor datasheet?p=RB521CM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 100MAVMN2M
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: VMN2M (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 23436 Stücke:
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RB521CS-30FHT2RA RB521CS-30FHT2RA Rohm Semiconductor datasheet?p=RB521CS-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 100MAVMN2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMN2 (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Grade: Automotive
auf Bestellung 16000 Stücke:
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16000+0.084 EUR
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RB521CS-30FHT2RA RB521CS-30FHT2RA Rohm Semiconductor datasheet?p=RB521CS-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 100MAVMN2
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMN2 (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 16783 Stücke:
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500+0.16 EUR
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RB521VM-40TE-17 RB521VM-40TE-17 Rohm Semiconductor datasheet?p=RB521VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 200MA UMD2
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
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6000+0.067 EUR
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Mindestbestellmenge: 3000
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RB521VM-40TE-17 RB521VM-40TE-17 Rohm Semiconductor datasheet?p=RB521VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 200MA UMD2
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
auf Bestellung 9399 Stücke:
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500+0.12 EUR
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RB078RSM10STFTL1 RB078RSM10STFTL1 Rohm Semiconductor datasheet?p=RB078RSM10STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 100V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB078RSM10STFTL1 RB078RSM10STFTL1 Rohm Semiconductor datasheet?p=RB078RSM10STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 100V 5A TO277A
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
auf Bestellung 1635 Stücke:
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100+1.15 EUR
500+0.91 EUR
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RB048RSM10STL1 RB048RSM10STL1 Rohm Semiconductor datasheet?p=RB048RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 100V 8A, TO-277GE, ULTRA LOW IR
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3.4 µA @ 100 V
Produkt ist nicht verfügbar
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SMLA12BNTT86
Hersteller: Rohm Semiconductor
Description: LED INDICATION SMD
Produkt ist nicht verfügbar
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BD25HC0MEFJ-LBH2 datasheet?p=BD25HC0MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD25HC0MEFJ-LBH2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 2.5V 1A 8HTSOP
Current - Supply (Max): 1.2 mA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 1.2V @ 1A
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 8V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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BD25HC0MEFJ-LBH2 datasheet?p=BD25HC0MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD25HC0MEFJ-LBH2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 2.5V 1A 8HTSOP
Current - Supply (Max): 1.2 mA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 1.2V @ 1A
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 8V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 104 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.66 EUR
10+3.29 EUR
25+3.1 EUR
100+2.64 EUR
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BD25HA3MEFJ-LBH2 datasheet?p=BD25HA3MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD25HA3MEFJ-LBH2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 2.5V 300MA 8HTSOP
Current - Supply (Max): 1.2 mA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 1.2V @ 300mA
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 8V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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BD25HA3MEFJ-LBH2 datasheet?p=BD25HA3MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD25HA3MEFJ-LBH2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 2.5V 300MA 8HTSOP
Current - Supply (Max): 1.2 mA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 1.2V @ 300mA
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 8V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 239 Stücke:
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Anzahl Preis
6+2.97 EUR
10+2.66 EUR
25+2.51 EUR
100+2.14 EUR
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PSR400ITQFC0L20 psr-e.pdf
PSR400ITQFC0L20
Hersteller: Rohm Semiconductor
Description: RES 200 UOHM 1% 12W 3920
Resistance: 200 µOhms
Part Status: Active
Height - Seated (Max): 0.081" (2.05mm)
Supplier Device Package: 3920
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -65°C ~ 175°C
Composition: Metal Element
Size / Dimension: 0.394" L x 0.205" W (10.00mm x 5.20mm)
Temperature Coefficient: 75/ +175ppm/°C
Package / Case: 3920 (1052 Metric)
Features: Automotive AEC-Q200, Current Sense
Tolerance: ±1%
Power (Watts): 12W
Packaging: Tape & Reel (TR)
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PSR400ITQFC0L20 psr-e.pdf
PSR400ITQFC0L20
Hersteller: Rohm Semiconductor
Description: RES 200 UOHM 1% 12W 3920
Resistance: 200 µOhms
Part Status: Active
Height - Seated (Max): 0.081" (2.05mm)
Supplier Device Package: 3920
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -65°C ~ 175°C
Composition: Metal Element
Size / Dimension: 0.394" L x 0.205" W (10.00mm x 5.20mm)
Temperature Coefficient: 75/ +175ppm/°C
Package / Case: 3920 (1052 Metric)
Features: Automotive AEC-Q200, Current Sense
Tolerance: ±1%
Power (Watts): 12W
Packaging: Cut Tape (CT)
auf Bestellung 2990 Stücke:
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Anzahl Preis
5+4.03 EUR
10+3.57 EUR
50+3.12 EUR
100+2.73 EUR
500+1.95 EUR
1000+1.69 EUR
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SDR03EZPF1470 sdr-e.pdf
SDR03EZPF1470
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 10000 Stücke:
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Anzahl Preis
5000+0.032 EUR
10000+0.03 EUR
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SDR03EZPF1470 sdr-e.pdf
SDR03EZPF1470
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
75+0.24 EUR
191+0.092 EUR
1000+0.039 EUR
2500+0.035 EUR
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SDR03EZPJ243 sdr-e.pdf
SDR03EZPJ243
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 24 kOhms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.3W
Packaging: Tape & Reel (TR)
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SDR03EZPJ243 sdr-e.pdf
SDR03EZPJ243
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 24 kOhms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.3W
Packaging: Cut Tape (CT)
auf Bestellung 9870 Stücke:
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Anzahl Preis
100+0.18 EUR
109+0.16 EUR
203+0.087 EUR
283+0.062 EUR
500+0.039 EUR
1000+0.027 EUR
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SDR03EZPF13R0 sdr-e.pdf
SDR03EZPF13R0
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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Anzahl Preis
5000+0.032 EUR
10000+0.03 EUR
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SDR03EZPF13R0 sdr-e.pdf
SDR03EZPF13R0
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
75+0.24 EUR
191+0.092 EUR
1000+0.039 EUR
2500+0.035 EUR
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SDR03EZPD4701 sdr-e.pdf
SDR03EZPD4701
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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Anzahl Preis
5000+0.048 EUR
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SDR03EZPD4701 sdr-e.pdf
SDR03EZPD4701
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 9388 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
50+0.36 EUR
127+0.14 EUR
1000+0.058 EUR
2500+0.053 EUR
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SDR03EZPD2741 sdr-e.pdf
SDR03EZPD2741
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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Anzahl Preis
5000+0.048 EUR
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SDR03EZPD2741 sdr-e.pdf
SDR03EZPD2741
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 9850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
50+0.36 EUR
127+0.14 EUR
1000+0.058 EUR
2500+0.053 EUR
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BAV70HMFHT116 bav70hmfht116-e.pdf
BAV70HMFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SSD3
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SSD3
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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RB411VAM-50TR rb411vam-50tr-e.pdf
RB411VAM-50TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 500MA TUMD2M
Produkt ist nicht verfügbar
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RB411VAM-50TR rb411vam-50tr-e.pdf
RB411VAM-50TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 500MA TUMD2M
auf Bestellung 2060 Stücke:
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Anzahl Preis
25+0.72 EUR
31+0.58 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.22 EUR
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SML-D13UWT86A sml-d13x-e.pdf
SML-D13UWT86A
Hersteller: Rohm Semiconductor
Description: MINI-MOLD CHIP LED: ROHM'S CHIP
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SML-D13UWT86A sml-d13x-e.pdf
SML-D13UWT86A
Hersteller: Rohm Semiconductor
Description: MINI-MOLD CHIP LED: ROHM'S CHIP
auf Bestellung 2985 Stücke:
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Anzahl Preis
21+0.86 EUR
33+0.54 EUR
100+0.31 EUR
1000+0.24 EUR
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RD3H160SPTL1 datasheet?p=RD3H160SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3H160SPTL1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 16A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
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2500+1.28 EUR
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RD3H160SPTL1 datasheet?p=RD3H160SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3H160SPTL1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 16A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
auf Bestellung 4976 Stücke:
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Anzahl Preis
6+3.03 EUR
10+2.7 EUR
100+2.1 EUR
500+1.74 EUR
1000+1.37 EUR
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R6030KNZ4C13 datasheet?p=R6030KNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6030KNZ4C13
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 305W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
auf Bestellung 580 Stücke:
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2+14.71 EUR
30+8.6 EUR
120+7.26 EUR
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R6035KNZ4C13 datasheet?p=R6035KNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 580 Stücke:
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2+16.51 EUR
10+14.92 EUR
100+12.35 EUR
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RB095T-40NZC9 datasheet?p=RB095T-40NZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB095T-40NZC9
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 6A TO220FN
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 6A
auf Bestellung 996 Stücke:
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Anzahl Preis
6+3.1 EUR
50+2.5 EUR
100+2.05 EUR
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RB095T-90 datasheet?p=RB095T-90&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB095T-90
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 90V 3A TO220FN
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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SDR10EZPF1003 sdr-e.pdf
Hersteller: Rohm Semiconductor
Description: RES 100K OHM 1% 1/2W 0805
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SDR10EZPF1003 sdr-e.pdf
Hersteller: Rohm Semiconductor
Description: RES 100K OHM 1% 1/2W 0805
auf Bestellung 4960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
42+0.42 EUR
108+0.16 EUR
1000+0.069 EUR
2500+0.063 EUR
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RB085BGE-30TL datasheet?p=RB085BGE-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB085BGE-30TL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 10A TO252
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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RB085BGE-30TL datasheet?p=RB085BGE-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB085BGE-30TL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 10A TO252
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.29 EUR
10+2.1 EUR
100+1.42 EUR
500+1.13 EUR
1000+1.04 EUR
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BD4958G-TR bd48xxg-e.pdf
BD4958G-TR
Hersteller: Rohm Semiconductor
Description: IC RESET CMOS 5.8V 5SSOP
Produkt ist nicht verfügbar
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BD4958G-TR bd48xxg-e.pdf
BD4958G-TR
Hersteller: Rohm Semiconductor
Description: IC RESET CMOS 5.8V 5SSOP
auf Bestellung 3852 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
27+0.67 EUR
29+0.62 EUR
100+0.5 EUR
250+0.46 EUR
500+0.39 EUR
1000+0.3 EUR
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RBQ10BM65AFHTL datasheet?p=RBQ10BM65AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10BM65AFHTL
Hersteller: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
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RBQ10BM65AFHTL datasheet?p=RBQ10BM65AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10BM65AFHTL
Hersteller: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 65 V
auf Bestellung 2474 Stücke:
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Anzahl Preis
12+1.5 EUR
14+1.34 EUR
100+1.05 EUR
500+0.86 EUR
1000+0.68 EUR
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RBQ10T45ANZC9 datasheet?p=RBQ10T45ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10T45ANZC9
Hersteller: Rohm Semiconductor
Description: RBQ10T45ANZ IS LOW IR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 45 V
auf Bestellung 1000 Stücke:
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Anzahl Preis
10+1.92 EUR
11+1.7 EUR
100+1.33 EUR
500+1.1 EUR
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RBQ10T65ANZC9 datasheet?p=RBQ10T65ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10T65ANZC9
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 65V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Produkt ist nicht verfügbar
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RBQ10NS45ATL rbq10ns45atl-e.pdf
RBQ10NS45ATL
Hersteller: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE
Produkt ist nicht verfügbar
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RBQ10NS45ATL rbq10ns45atl-e.pdf
RBQ10NS45ATL
Hersteller: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE
auf Bestellung 747 Stücke:
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Anzahl Preis
10+1.87 EUR
11+1.66 EUR
100+1.3 EUR
500+1.07 EUR
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RBQ10NS65AFHTL datasheet?p=RBQ10NS65AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10NS65AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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RBQ10NS65AFHTL datasheet?p=RBQ10NS65AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10NS65AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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RBQ10NS65ATL datasheet?p=RBQ10NS65A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10NS65ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RBQ10NS65ATL datasheet?p=RBQ10NS65A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10NS65ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RBQ10NS45AFHTL rbq10ns45afhtl-e.pdf
RBQ10NS45AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE (RECTIFIER FRD) 45V-VRM 45
Produkt ist nicht verfügbar
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RBQ10NS45AFHTL rbq10ns45afhtl-e.pdf
RBQ10NS45AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE (RECTIFIER FRD) 45V-VRM 45
auf Bestellung 772 Stücke:
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11+1.67 EUR
12+1.49 EUR
100+1.16 EUR
500+0.96 EUR
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R6015FNJTL datasheet?p=R6015FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6015FNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A LPT
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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R6015FNX datasheet?p=R6015FNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6015FNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A TO-220FM
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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BSM300C12P3E201 datasheet?p=BSM300C12P3E201&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSM300C12P3E201
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 300A MODULE
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -4V
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 5.6V @ 80mA
Power Dissipation (Max): 1360W (Tc)
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
FET Type: N-Channel
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RB521VM-30TE-17 datasheet?p=RB521VM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521VM-30TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA UMD2
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
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Anzahl Preis
3000+0.07 EUR
6000+0.067 EUR
9000+0.066 EUR
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RB521VM-30TE-17 datasheet?p=RB521VM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521VM-30TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA UMD2
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
auf Bestellung 14746 Stücke:
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53+0.33 EUR
76+0.23 EUR
116+0.15 EUR
500+0.12 EUR
1000+0.11 EUR
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RB521CM-40T2R datasheet?p=RB521CM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521CM-40T2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MAVMN2M
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: VMN2M (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 8000 Stücke:
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Anzahl Preis
8000+0.042 EUR
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RB521CM-40T2R datasheet?p=RB521CM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521CM-40T2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MAVMN2M
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: VMN2M (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 23436 Stücke:
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Anzahl Preis
56+0.32 EUR
91+0.19 EUR
144+0.12 EUR
500+0.089 EUR
1000+0.079 EUR
2000+0.076 EUR
Mindestbestellmenge: 56
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RB521CS-30FHT2RA datasheet?p=RB521CS-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521CS-30FHT2RA
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MAVMN2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMN2 (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Grade: Automotive
auf Bestellung 16000 Stücke:
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Anzahl Preis
8000+0.086 EUR
16000+0.084 EUR
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RB521CS-30FHT2RA datasheet?p=RB521CS-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521CS-30FHT2RA
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MAVMN2
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMN2 (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 16783 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
53+0.34 EUR
100+0.2 EUR
500+0.16 EUR
1000+0.14 EUR
2000+0.12 EUR
Mindestbestellmenge: 33
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RB521VM-40TE-17 datasheet?p=RB521VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521VM-40TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA UMD2
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.07 EUR
6000+0.067 EUR
9000+0.066 EUR
Mindestbestellmenge: 3000
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RB521VM-40TE-17 datasheet?p=RB521VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521VM-40TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA UMD2
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
auf Bestellung 9399 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
74+0.24 EUR
120+0.15 EUR
500+0.12 EUR
1000+0.11 EUR
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RB078RSM10STFTL1 datasheet?p=RB078RSM10STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB078RSM10STFTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB078RSM10STFTL1 datasheet?p=RB078RSM10STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB078RSM10STFTL1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 5A TO277A
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
auf Bestellung 1635 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.25 EUR
12+1.56 EUR
100+1.15 EUR
500+0.91 EUR
1000+0.83 EUR
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RB048RSM10STL1 datasheet?p=RB048RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB048RSM10STL1
Hersteller: Rohm Semiconductor
Description: 100V 8A, TO-277GE, ULTRA LOW IR
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3.4 µA @ 100 V
Produkt ist nicht verfügbar
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