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BD63801EFV-E2 BD63801EFV-E2 Rohm Semiconductor datasheet?p=BD63801EFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC MTR DRV BIPLR 19-28V 24HTSSOP
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Step Resolution: 1, 1/2
Motor Type - Stepper: Bipolar
Supplier Device Package: 24-HTSSOP-B
Voltage - Load: 19V ~ 28V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 19V ~ 28V
Output Configuration: Half Bridge (4)
Operating Temperature: -25°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 500mA
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RXL035N03TCR RXL035N03TCR Rohm Semiconductor datasheet?p=RXL035N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 30V 3..5A SMALL SIGNAL MOSFE
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 910mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
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RTM002P02T2L RTM002P02T2L Rohm Semiconductor RTM002P02.pdf Description: MOSFET P-CH 20V 200MA VMT3
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: VMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 150mW (Ta)
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VT6Z1T2R VT6Z1T2R Rohm Semiconductor vt6z1t2r-e.pdf Description: TRANS NPN/PNP 20V 0.2A 6VMT
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VT6Z1T2R VT6Z1T2R Rohm Semiconductor vt6z1t2r-e.pdf Description: TRANS NPN/PNP 20V 0.2A 6VMT
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QH8KA3TCR QH8KA3TCR Rohm Semiconductor datasheet?p=QH8KA3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 9A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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QH8KA3TCR QH8KA3TCR Rohm Semiconductor datasheet?p=QH8KA3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 9A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
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QH8KB6TCR QH8KB6TCR Rohm Semiconductor datasheet?p=QH8KB6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 40V 8A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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QH8KB6TCR QH8KB6TCR Rohm Semiconductor datasheet?p=QH8KB6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 40V 8A TSMT8
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 40V
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QH8JC5TCR QH8JC5TCR Rohm Semiconductor datasheet?p=QH8JC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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QH8JC5TCR QH8JC5TCR Rohm Semiconductor datasheet?p=QH8JC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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CSL0902DT1C CSL0902DT1C Rohm Semiconductor datasheet?p=CSL0902DT(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED ORANGE CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 710mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Grade: Automotive
Qualification: AEC-Q102
Produkt ist nicht verfügbar
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CSL0902DT1C CSL0902DT1C Rohm Semiconductor datasheet?p=CSL0902DT(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 710mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Grade: Automotive
Qualification: AEC-Q102
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CSL0902DT1 CSL0902DT1 Rohm Semiconductor datasheet?p=CSL0902DT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED ORANGE CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 560mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Produkt ist nicht verfügbar
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CSL0902DT1 CSL0902DT1 Rohm Semiconductor datasheet?p=CSL0902DT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 560mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
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RB068VWM100TR RB068VWM100TR Rohm Semiconductor datasheet?p=RB068VWM100&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 100V 2A PMDE
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RB068VWM-60TFTR RB068VWM-60TFTR Rohm Semiconductor datasheet?p=RB068VWM-60TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 2A PMDE
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
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RB068VWM-30TFTR RB068VWM-30TFTR Rohm Semiconductor datasheet?p=RB068VWM-30TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 2A PMDE
Current - Reverse Leakage @ Vr: 600 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RB068VWM150TFTR RB068VWM150TFTR Rohm Semiconductor datasheet?p=RB068VWM150TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 150V 2A PMDE
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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RB068VWM100TFTR RB068VWM100TFTR Rohm Semiconductor datasheet?p=RB068VWM100TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 100V 2A PMDE
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RB068VWM150TR RB068VWM150TR Rohm Semiconductor datasheet?p=RB068VWM150&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 150V 2A PMDE
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RB068VWM-40TFTR RB068VWM-40TFTR Rohm Semiconductor datasheet?p=RB068VWM-40TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 2A PMDE
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RB068VWM-60TR RB068VWM-60TR Rohm Semiconductor datasheet?p=RB068VWM-60&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 2A PMDE
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RB068VWM-40TR RB068VWM-40TR Rohm Semiconductor datasheet?p=RB068VWM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 2A PMDE
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RGSX5TS65HRC11 RGSX5TS65HRC11 Rohm Semiconductor datasheet?p=RGSX5TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 650V 114A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Part Status: Not For New Designs
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RGSX5TS65EHRC11 RGSX5TS65EHRC11 Rohm Semiconductor datasheet?p=RGSX5TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 650V 114A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Reverse Recovery Time (trr): 116 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RGSX5TS65EGC11 RGSX5TS65EGC11 Rohm Semiconductor datasheet?p=RGSX5TS65E&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 114A TO-247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Reverse Recovery Time (trr): 116 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RB480Y-90FHT2R RB480Y-90FHT2R Rohm Semiconductor datasheet?p=RB480Y-90FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOT 90V 100MA EMD4
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 90 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD4
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-75-4, SOT-543
Packaging: Tape & Reel (TR)
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RB480KTL RB480KTL Rohm Semiconductor rb480ktl-e Description: DIODE ARRAY SCHOTTKY 40V UMD4
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SML-D22YVWT86 SML-D22YVWT86 Rohm Semiconductor sml-d22-e.pdf Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
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SML-D22YVWT86 SML-D22YVWT86 Rohm Semiconductor sml-d22-e.pdf Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
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RV5A040APTCR1 RV5A040APTCR1 Rohm Semiconductor datasheet?p=RV5A040AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 4A DFN1616-6
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V, 0V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1616-8S
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWFDFN
Packaging: Tape & Reel (TR)
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RV5A040APTCR1 RV5A040APTCR1 Rohm Semiconductor datasheet?p=RV5A040AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 4A DFN1616-6
Mounting Type: Surface Mount
Package / Case: 6-PowerWFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V, 0V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1616-8S
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
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YFZVFHTR8.2B YFZVFHTR8.2B Rohm Semiconductor datasheet?p=YFZVFH8.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 7.99V 500MW TUMD2M
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: TUMD2M
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 7.99 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Tolerance: ±2.57%
Packaging: Tape & Reel (TR)
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YFZVFHTR8.2B YFZVFHTR8.2B Rohm Semiconductor datasheet?p=YFZVFH8.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 7.99V 500MW TUMD2M
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: TUMD2M
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 7.99 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Tolerance: ±2.57%
Packaging: Cut Tape (CT)
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RPI-574 Rohm Semiconductor RPI-574.PDF Description: SENSOR OPT SLOT PHOTOTRAN PCB MT
Current - DC Forward (If) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 30 mA
Response Time: 10µs, 10µs
Output Configuration: Phototransistor
Operating Temperature: -25°C ~ 85°C
Mounting Type: Through Hole
Sensing Method: Through-Beam
Sensing Distance: 0.197" (5mm)
Package / Case: PCB Mount
Packaging: Bulk
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RS3E075ATTB1 RS3E075ATTB1 Rohm Semiconductor rs3e075attb1-e.pdf Description: PCH -30V -7.5A MIDDLE POWER MOSF
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RS3E075ATTB1 RS3E075ATTB1 Rohm Semiconductor rs3e075attb1-e.pdf Description: PCH -30V -7.5A MIDDLE POWER MOSF
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RH6P040BHTB1 RH6P040BHTB1 Rohm Semiconductor rh6p040bhtb1-e.pdf Description: NCH 100V 40A, HSMT8, POWER MOSFE
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RH6P040BHTB1 RH6P040BHTB1 Rohm Semiconductor rh6p040bhtb1-e.pdf Description: NCH 100V 40A, HSMT8, POWER MOSFE
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RD3L07BBGTL1 RD3L07BBGTL1 Rohm Semiconductor datasheet?p=RD3L07BBG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 60V 115A, TO-252, POWER MOSF
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RD3L07BBGTL1 RD3L07BBGTL1 Rohm Semiconductor datasheet?p=RD3L07BBG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 60V 115A, TO-252, POWER MOSF
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
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SDR10EZPF5103 SDR10EZPF5103 Rohm Semiconductor sdr-e.pdf Description: RES 510K OHM 1% 1/2W 0805
Resistance: 510 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
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SDR10EZPF5103 SDR10EZPF5103 Rohm Semiconductor sdr-e.pdf Description: RES 510K OHM 1% 1/2W 0805
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Resistance: 510 kOhms
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R6507ENXC7G R6507ENXC7G Rohm Semiconductor datasheet?p=R6507ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 7A TO-220FM, LOW-NOISE POWE
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 46W (Tc)
Packaging: Tube
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
auf Bestellung 998 Stücke:
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RV5C040APTCR1 RV5C040APTCR1 Rohm Semiconductor datasheet?p=RV5C040AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 4A DFN1616-6
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -8V, 0V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1616-8S
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RV5C040APTCR1 RV5C040APTCR1 Rohm Semiconductor datasheet?p=RV5C040AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 4A DFN1616-6
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -8V, 0V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1616-8S
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
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RSB6.8JS2T2R RSB6.8JS2T2R Rohm Semiconductor datasheet?p=RSB6.8JS2&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TVS DIODE 3.5VWM EMD6
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 2
Supplier Device Package: EMD6
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Capacitance @ Frequency: 1pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RSB6.8JS2T2R RSB6.8JS2T2R Rohm Semiconductor datasheet?p=RSB6.8JS2&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TVS DIODE 3.5VWM EMD6
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 2
Supplier Device Package: EMD6
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Capacitance @ Frequency: 1pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 7935 Stücke:
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RSB6.8CST2R RSB6.8CST2R Rohm Semiconductor RSB6.8CS_DS.pdf Description: TVS DIODE 3.5VWM VMN2
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RSB6.8CST2R RSB6.8CST2R Rohm Semiconductor RSB6.8CS_DS.pdf Description: TVS DIODE 3.5VWM VMN2
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RSB6.8JS2FHT2R RSB6.8JS2FHT2R Rohm Semiconductor RSB6.8JS2FH.pdf Description: TVS DIODE 3.5VWM EMD6
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 2
Supplier Device Package: EMD6
Voltage - Reverse Standoff (Typ): 3.5V
Capacitance @ Frequency: 1pF @ 1MHz
Applications: Automotive
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
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RSB6.8JS2FHT2R RSB6.8JS2FHT2R Rohm Semiconductor RSB6.8JS2FH.pdf Description: TVS DIODE 3.5VWM EMD6
Applications: Automotive
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 2
Supplier Device Package: EMD6
Voltage - Reverse Standoff (Typ): 3.5V
Capacitance @ Frequency: 1pF @ 1MHz
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RSB6.8ZSNXT2N RSB6.8ZSNXT2N Rohm Semiconductor Description: TVS DIODE 3.5VWM GMD2
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RSB6.8SFHTE61 Rohm Semiconductor Description: DIODE ZENER SMD
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BU90T82-ZE2 BU90T82-ZE2 Rohm Semiconductor datasheet?p=BU90T82&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC DRIVER 8/0 27BIT LVDS DUAL
Part Status: Active
Protocol: LVDS
Data Rate: 1.218Gbps
Number of Drivers/Receivers: 8/0
Voltage - Supply: 1.62V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: Driver
Mounting Type: Surface Mount
Package / Case: 72-TFBGA
Packaging: Tape & Reel (TR)
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BU90T82-ZE2 BU90T82-ZE2 Rohm Semiconductor datasheet?p=BU90T82&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC DRIVER 8/0 27BIT LVDS DUAL
Part Status: Active
Protocol: LVDS
Data Rate: 1.218Gbps
Number of Drivers/Receivers: 8/0
Voltage - Supply: 1.62V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: Driver
Mounting Type: Surface Mount
Package / Case: 72-TFBGA
Packaging: Cut Tape (CT)
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BD9757MWV-E2 BD9757MWV-E2 Rohm Semiconductor Description: IC REG DGTL CAM 8OUT 44UQFN
Supplier Device Package: UQFN044V6060
Applications: Converter, Digital Camera
Operating Temperature: -25°C ~ 85°C
Voltage - Input: 24V
Number of Outputs: 8
Mounting Type: Surface Mount
Voltage - Output: Multiple
Package / Case: 44-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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MCR01MRTJ101 MCR01MRTJ101 Rohm Semiconductor MCR01MRT_SeriesSpec.pdf Description: RES SMD 100 OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Discontinued at Digi-Key
Resistance: 100 Ohms
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BD63521EFV-EVK-001 BD63521EFV-EVK-001 Rohm Semiconductor bd63xxxefv-evk-001_ug-e.pdf Description: THIS EVALUATION BOARD IS A BOARD
Part Status: Active
Embedded: No
Primary Attributes: 8V ~ 28V Supply
Supplied Contents: Board(s)
Utilized IC / Part: BD63521
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
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BD63801EFV-E2 datasheet?p=BD63801EFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD63801EFV-E2
Hersteller: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 24HTSSOP
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Step Resolution: 1, 1/2
Motor Type - Stepper: Bipolar
Supplier Device Package: 24-HTSSOP-B
Voltage - Load: 19V ~ 28V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 19V ~ 28V
Output Configuration: Half Bridge (4)
Operating Temperature: -25°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 500mA
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RXL035N03TCR datasheet?p=RXL035N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RXL035N03TCR
Hersteller: Rohm Semiconductor
Description: NCH 30V 3..5A SMALL SIGNAL MOSFE
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 910mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
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RTM002P02T2L RTM002P02.pdf
RTM002P02T2L
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 200MA VMT3
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: VMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 150mW (Ta)
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VT6Z1T2R vt6z1t2r-e.pdf
VT6Z1T2R
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP 20V 0.2A 6VMT
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VT6Z1T2R vt6z1t2r-e.pdf
VT6Z1T2R
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP 20V 0.2A 6VMT
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QH8KA3TCR datasheet?p=QH8KA3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KA3TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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QH8KA3TCR datasheet?p=QH8KA3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KA3TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
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QH8KB6TCR datasheet?p=QH8KB6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KB6TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 8A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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QH8KB6TCR datasheet?p=QH8KB6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8KB6TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 8A TSMT8
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 40V
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QH8JC5TCR datasheet?p=QH8JC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8JC5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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QH8JC5TCR datasheet?p=QH8JC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8JC5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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CSL0902DT1C datasheet?p=CSL0902DT(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CSL0902DT1C
Hersteller: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 710mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Grade: Automotive
Qualification: AEC-Q102
Produkt ist nicht verfügbar
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CSL0902DT1C datasheet?p=CSL0902DT(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CSL0902DT1C
Hersteller: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 710mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Grade: Automotive
Qualification: AEC-Q102
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CSL0902DT1 datasheet?p=CSL0902DT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CSL0902DT1
Hersteller: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 560mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Produkt ist nicht verfügbar
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CSL0902DT1 datasheet?p=CSL0902DT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CSL0902DT1
Hersteller: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 560mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
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RB068VWM100TR datasheet?p=RB068VWM100&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM100TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 2A PMDE
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RB068VWM-60TFTR datasheet?p=RB068VWM-60TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM-60TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 2A PMDE
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
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RB068VWM-30TFTR datasheet?p=RB068VWM-30TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM-30TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 2A PMDE
Current - Reverse Leakage @ Vr: 600 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RB068VWM150TFTR datasheet?p=RB068VWM150TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM150TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 2A PMDE
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 2938 Stücke:
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RB068VWM100TFTR datasheet?p=RB068VWM100TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM100TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 2A PMDE
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RB068VWM150TR datasheet?p=RB068VWM150&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM150TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 2A PMDE
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RB068VWM-40TFTR datasheet?p=RB068VWM-40TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM-40TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDE
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RB068VWM-60TR datasheet?p=RB068VWM-60&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM-60TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 2A PMDE
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RB068VWM-40TR datasheet?p=RB068VWM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM-40TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDE
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 175°C
Supplier Device Package: PMDE
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RGSX5TS65HRC11 datasheet?p=RGSX5TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGSX5TS65HRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 114A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Part Status: Not For New Designs
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RGSX5TS65EHRC11 datasheet?p=RGSX5TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGSX5TS65EHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 114A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Reverse Recovery Time (trr): 116 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RGSX5TS65EGC11 datasheet?p=RGSX5TS65E&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGSX5TS65EGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 114A TO-247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 114 A
Gate Charge: 79 nC
Test Condition: 400V, 75A, 10Ohm, 15V
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 43ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Reverse Recovery Time (trr): 116 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 419 Stücke:
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RB480Y-90FHT2R datasheet?p=RB480Y-90FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB480Y-90FHT2R
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 90V 100MA EMD4
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 90 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD4
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-75-4, SOT-543
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB480KTL rb480ktl-e
RB480KTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 40V UMD4
Produkt ist nicht verfügbar
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SML-D22YVWT86 sml-d22-e.pdf
SML-D22YVWT86
Hersteller: Rohm Semiconductor
Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
Produkt ist nicht verfügbar
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SML-D22YVWT86 sml-d22-e.pdf
SML-D22YVWT86
Hersteller: Rohm Semiconductor
Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
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RV5A040APTCR1 datasheet?p=RV5A040AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RV5A040APTCR1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 4A DFN1616-6
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V, 0V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1616-8S
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWFDFN
Packaging: Tape & Reel (TR)
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3000+0.62 EUR
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RV5A040APTCR1 datasheet?p=RV5A040AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RV5A040APTCR1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 4A DFN1616-6
Mounting Type: Surface Mount
Package / Case: 6-PowerWFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V, 0V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1616-8S
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
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YFZVFHTR8.2B datasheet?p=YFZVFH8.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
YFZVFHTR8.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 7.99V 500MW TUMD2M
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: TUMD2M
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 7.99 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Tolerance: ±2.57%
Packaging: Tape & Reel (TR)
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YFZVFHTR8.2B datasheet?p=YFZVFH8.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
YFZVFHTR8.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 7.99V 500MW TUMD2M
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: TUMD2M
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 7.99 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Tolerance: ±2.57%
Packaging: Cut Tape (CT)
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RPI-574 RPI-574.PDF
Hersteller: Rohm Semiconductor
Description: SENSOR OPT SLOT PHOTOTRAN PCB MT
Current - DC Forward (If) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 30 mA
Response Time: 10µs, 10µs
Output Configuration: Phototransistor
Operating Temperature: -25°C ~ 85°C
Mounting Type: Through Hole
Sensing Method: Through-Beam
Sensing Distance: 0.197" (5mm)
Package / Case: PCB Mount
Packaging: Bulk
Produkt ist nicht verfügbar
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RS3E075ATTB1 rs3e075attb1-e.pdf
RS3E075ATTB1
Hersteller: Rohm Semiconductor
Description: PCH -30V -7.5A MIDDLE POWER MOSF
Produkt ist nicht verfügbar
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RS3E075ATTB1 rs3e075attb1-e.pdf
RS3E075ATTB1
Hersteller: Rohm Semiconductor
Description: PCH -30V -7.5A MIDDLE POWER MOSF
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RH6P040BHTB1 rh6p040bhtb1-e.pdf
RH6P040BHTB1
Hersteller: Rohm Semiconductor
Description: NCH 100V 40A, HSMT8, POWER MOSFE
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RH6P040BHTB1 rh6p040bhtb1-e.pdf
RH6P040BHTB1
Hersteller: Rohm Semiconductor
Description: NCH 100V 40A, HSMT8, POWER MOSFE
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RD3L07BBGTL1 datasheet?p=RD3L07BBG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3L07BBGTL1
Hersteller: Rohm Semiconductor
Description: NCH 60V 115A, TO-252, POWER MOSF
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RD3L07BBGTL1 datasheet?p=RD3L07BBG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3L07BBGTL1
Hersteller: Rohm Semiconductor
Description: NCH 60V 115A, TO-252, POWER MOSF
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
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SDR10EZPF5103 sdr-e.pdf
SDR10EZPF5103
Hersteller: Rohm Semiconductor
Description: RES 510K OHM 1% 1/2W 0805
Resistance: 510 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SDR10EZPF5103 sdr-e.pdf
SDR10EZPF5103
Hersteller: Rohm Semiconductor
Description: RES 510K OHM 1% 1/2W 0805
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Resistance: 510 kOhms
auf Bestellung 4997 Stücke:
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44+0.48 EUR
84+0.25 EUR
122+0.18 EUR
141+0.14 EUR
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R6507ENXC7G datasheet?p=R6507ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6507ENXC7G
Hersteller: Rohm Semiconductor
Description: 650V 7A TO-220FM, LOW-NOISE POWE
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 46W (Tc)
Packaging: Tube
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
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50+2.19 EUR
100+1.3 EUR
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RV5C040APTCR1 datasheet?p=RV5C040AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RV5C040APTCR1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 4A DFN1616-6
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -8V, 0V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1616-8S
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RV5C040APTCR1 datasheet?p=RV5C040AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RV5C040APTCR1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 4A DFN1616-6
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -8V, 0V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1616-8S
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
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100+1.04 EUR
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RSB6.8JS2T2R datasheet?p=RSB6.8JS2&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RSB6.8JS2T2R
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM EMD6
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 2
Supplier Device Package: EMD6
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Capacitance @ Frequency: 1pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RSB6.8JS2T2R datasheet?p=RSB6.8JS2&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RSB6.8JS2T2R
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM EMD6
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 2
Supplier Device Package: EMD6
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Capacitance @ Frequency: 1pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
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12+1.78 EUR
19+1.11 EUR
100+0.71 EUR
500+0.55 EUR
1000+0.5 EUR
2000+0.45 EUR
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RSB6.8CST2R RSB6.8CS_DS.pdf
RSB6.8CST2R
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM VMN2
Produkt ist nicht verfügbar
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RSB6.8CST2R RSB6.8CS_DS.pdf
RSB6.8CST2R
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM VMN2
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23+0.92 EUR
29+0.75 EUR
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RSB6.8JS2FHT2R RSB6.8JS2FH.pdf
RSB6.8JS2FHT2R
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM EMD6
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 2
Supplier Device Package: EMD6
Voltage - Reverse Standoff (Typ): 3.5V
Capacitance @ Frequency: 1pF @ 1MHz
Applications: Automotive
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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RSB6.8JS2FHT2R RSB6.8JS2FH.pdf
RSB6.8JS2FHT2R
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM EMD6
Applications: Automotive
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 2
Supplier Device Package: EMD6
Voltage - Reverse Standoff (Typ): 3.5V
Capacitance @ Frequency: 1pF @ 1MHz
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13+1.71 EUR
20+1.08 EUR
100+0.7 EUR
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RSB6.8ZSNXT2N
RSB6.8ZSNXT2N
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM GMD2
Produkt ist nicht verfügbar
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RSB6.8SFHTE61
Hersteller: Rohm Semiconductor
Description: DIODE ZENER SMD
Produkt ist nicht verfügbar
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BU90T82-ZE2 datasheet?p=BU90T82&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU90T82-ZE2
Hersteller: Rohm Semiconductor
Description: IC DRIVER 8/0 27BIT LVDS DUAL
Part Status: Active
Protocol: LVDS
Data Rate: 1.218Gbps
Number of Drivers/Receivers: 8/0
Voltage - Supply: 1.62V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: Driver
Mounting Type: Surface Mount
Package / Case: 72-TFBGA
Packaging: Tape & Reel (TR)
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BU90T82-ZE2 datasheet?p=BU90T82&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU90T82-ZE2
Hersteller: Rohm Semiconductor
Description: IC DRIVER 8/0 27BIT LVDS DUAL
Part Status: Active
Protocol: LVDS
Data Rate: 1.218Gbps
Number of Drivers/Receivers: 8/0
Voltage - Supply: 1.62V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: Driver
Mounting Type: Surface Mount
Package / Case: 72-TFBGA
Packaging: Cut Tape (CT)
auf Bestellung 6282 Stücke:
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2+16.46 EUR
10+12.77 EUR
25+11.85 EUR
100+10.84 EUR
250+10.35 EUR
500+10.07 EUR
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BD9757MWV-E2
BD9757MWV-E2
Hersteller: Rohm Semiconductor
Description: IC REG DGTL CAM 8OUT 44UQFN
Supplier Device Package: UQFN044V6060
Applications: Converter, Digital Camera
Operating Temperature: -25°C ~ 85°C
Voltage - Input: 24V
Number of Outputs: 8
Mounting Type: Surface Mount
Voltage - Output: Multiple
Package / Case: 44-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MCR01MRTJ101 MCR01MRT_SeriesSpec.pdf
MCR01MRTJ101
Hersteller: Rohm Semiconductor
Description: RES SMD 100 OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Discontinued at Digi-Key
Resistance: 100 Ohms
Produkt ist nicht verfügbar
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BD63521EFV-EVK-001 bd63xxxefv-evk-001_ug-e.pdf
BD63521EFV-EVK-001
Hersteller: Rohm Semiconductor
Description: THIS EVALUATION BOARD IS A BOARD
Part Status: Active
Embedded: No
Primary Attributes: 8V ~ 28V Supply
Supplied Contents: Board(s)
Utilized IC / Part: BD63521
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
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