Suchergebnisse für "2sc35" : > 60
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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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2SC3535 Produktcode: 82685 |
NEC |
Transistoren > Bipolar-Transistoren NPN Gehäuse: MP-80 fT: 12 MHz Uceo,V: 450 Ucbo,V: 1000 Ic,A: 5 h21: 10 |
auf Bestellung 1 Stück: Lieferzeit 21-28 Tag (e) |
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2SC3585 Produktcode: 84826 |
Sanyo |
![]() Gehäuse: TO-236 Ucbo,V: 20 Ic,A: 0,035 h21: 60 |
auf Bestellung 3 Stück: Lieferzeit 21-28 Tag (e) |
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2SC3503E | onsemi |
![]() Packaging: Bulk Part Status: Active Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 150MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 7 W |
auf Bestellung 55546 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3503E | ONSEMI |
![]() tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 100mA usEccn: EAR99 euEccn: NLR Verlustleistung: 7W Bauform - Transistor: TO-126 Anzahl der Pins: 3Pin(s) Produktpalette: 2SC3503 Series Kollektor-Emitter-Spannung, max.: 300V productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Übergangsfrequenz: 150MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 55546 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC3518-Z-AZ | Renesas |
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auf Bestellung 487 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC3519 | Sanken |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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2SC3519 | PMC-Sierra |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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2SC3519 | Sanken Electric USA Inc. |
![]() Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V Frequency - Transition: 50MHz Supplier Device Package: TO-3P Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 130 W |
auf Bestellung 1445 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3519A | Sanken Electric USA Inc. |
![]() Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V Frequency - Transition: 50MHz Supplier Device Package: TO-3P Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 180 V Power - Max: 130 W |
auf Bestellung 3719 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3519A | Sanken Electric Company, Ltd. |
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auf Bestellung 249 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC3568(1)-S6-AZ | Renesas Electronics Corporation |
![]() Packaging: Bulk Part Status: Active |
auf Bestellung 771 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3568(2)-S6-AZ | Renesas Electronics Corporation |
![]() Packaging: Bulk Part Status: Active |
auf Bestellung 652 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3568(8)-AZ | Renesas Electronics Corporation |
![]() Packaging: Bulk Part Status: Active |
auf Bestellung 9976 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3568-AZ | Renesas Electronics Corporation |
![]() Packaging: Bulk Part Status: Active Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 3A, 5V Supplier Device Package: TO-220F Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 30 W |
auf Bestellung 5270 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3571-AZ | Renesas Electronics Corporation |
![]() Packaging: Bulk Part Status: Active Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Supplier Device Package: TO-220F Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 30 W |
auf Bestellung 19025 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3576 | onsemi |
![]() Packaging: Bulk Part Status: Active Package / Case: 3-SSIP Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Frequency - Transition: 250MHz Supplier Device Package: 3-SPA Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW |
auf Bestellung 35650 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3576 | ONSEMI |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 35650 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC3576-AC | onsemi |
![]() Packaging: Bulk Part Status: Active Package / Case: 3-SSIP Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V Frequency - Transition: 250MHz Supplier Device Package: 3-SPA Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 300 mW |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3576-AC | ONSEMI |
![]() tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC3576-JVC-AC | onsemi |
![]() Packaging: Bulk Part Status: Active Package / Case: 3-SSIP Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V Frequency - Transition: 250MHz Supplier Device Package: 3-SPA Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 300 mW |
auf Bestellung 29359 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3576-JVC-AC | ONSEMI |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 29359 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC3576-MTK-AC | onsemi |
![]() Packaging: Bulk Part Status: Active Package / Case: 3-SSIP Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V Frequency - Transition: 250MHz Supplier Device Package: 3-SPA Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 300 mW |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3576-MTK-AC | ONSEMI |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC3583-T1B-A | Renesas Electronics Corporation |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13dB Power - Max: 200mW Current - Collector (Ic) (Max): 65mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Supplier Device Package: SOT23-3 (TO-236) Part Status: Obsolete |
auf Bestellung 108160 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3585-T1B-A | Renesas Electronics Corporation |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 9dB Power - Max: 200mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Supplier Device Package: SOT23-3 (TO-236) Part Status: Obsolete |
auf Bestellung 417384 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3591 | Sanyo |
![]() Packaging: Bulk Part Status: Active Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 500mA, 5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 1V Frequency - Transition: 40MHz Supplier Device Package: TO-220AB Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 50 W |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3595D | Sanyo |
![]() Packaging: Bulk Part Status: Active Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Frequency - Transition: 2GHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.2 W |
auf Bestellung 7513 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3596E | onsemi |
![]() Packaging: Bulk Part Status: Active Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Frequency - Transition: 700MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.2 W |
auf Bestellung 17014 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3596E | ONSEMI |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 17014 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC3597D | onsemi |
![]() Packaging: Bulk Part Status: Active Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V Frequency - Transition: 800MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.2 W |
auf Bestellung 7800 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3597D | ONSEMI |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 890 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC3598E | onsemi |
![]() Packaging: Bulk Part Status: Active Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 500MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1.2 W |
auf Bestellung 6800 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3598E | ONSEMI |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1043 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC3599E | Sanyo |
![]() Packaging: Bulk Part Status: Active Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 7mA, 70mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Frequency - Transition: 500MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1.2 W |
auf Bestellung 4405 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC35 |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC350 | NEC | CAN |
auf Bestellung 495 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3500 | NEC | TO-55 |
auf Bestellung 212 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3500 | NEC |
auf Bestellung 212 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3501 |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3502 |
auf Bestellung 40000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3502-E |
auf Bestellung 1052 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3502E | SANYO | 99 TO-126 |
auf Bestellung 630 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3503 |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3505 | FUJI | MODULE |
auf Bestellung 454 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3505 | FUJI | 00+ SC-65 |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3506 |
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auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3507 | PAN |
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auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3508 |
auf Bestellung 17400 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3509 |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC351 |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC351 | CAN |
auf Bestellung 1030 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3510 |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3511 |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3512 |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3513 |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3513IS | HITACHI | 97+ SOT-23 |
auf Bestellung 31999 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3513IS | HITACHI | SOT23 |
auf Bestellung 3600 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3513ISTL |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3513S-TR | HITACHI | 99+ SOT23 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3514 |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
2SC3535 Produktcode: 82685 |
Hersteller: NEC
Transistoren > Bipolar-Transistoren NPN
Gehäuse: MP-80
fT: 12 MHz
Uceo,V: 450
Ucbo,V: 1000
Ic,A: 5
h21: 10
Transistoren > Bipolar-Transistoren NPN
Gehäuse: MP-80
fT: 12 MHz
Uceo,V: 450
Ucbo,V: 1000
Ic,A: 5
h21: 10
auf Bestellung 1 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
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1+ | 3.64 EUR |
2SC3503E |
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Hersteller: onsemi
Description: TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
Description: TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
auf Bestellung 55546 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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1025+ | 0.47 EUR |
2SC3503E |
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Hersteller: ONSEMI
Description: ONSEMI - 2SC3503E - Bipolarer Einzeltransistor (BJT), Einfach NPN, 300 V, 100 mA, 7 W, TO-126, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 100hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 100mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 7W
Bauform - Transistor: TO-126
Anzahl der Pins: 3Pin(s)
Produktpalette: 2SC3503 Series
Kollektor-Emitter-Spannung, max.: 300V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: Einfach NPN
Übergangsfrequenz: 150MHz
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SC3503E - Bipolarer Einzeltransistor (BJT), Einfach NPN, 300 V, 100 mA, 7 W, TO-126, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 100hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 100mA
usEccn: EAR99
euEccn: NLR
Verlustleistung: 7W
Bauform - Transistor: TO-126
Anzahl der Pins: 3Pin(s)
Produktpalette: 2SC3503 Series
Kollektor-Emitter-Spannung, max.: 300V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: Einfach NPN
Übergangsfrequenz: 150MHz
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 55546 Stücke:
Lieferzeit 14-21 Tag (e)2SC3518-Z-AZ |
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Hersteller: Renesas
Trans GP BJT NPN 60V 5A 2000mW Automotive 3-Pin(2+Tab) TO-252
Trans GP BJT NPN 60V 5A 2000mW Automotive 3-Pin(2+Tab) TO-252
auf Bestellung 487 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
216+ | 0.73 EUR |
221+ | 0.68 EUR |
2SC3519 |
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auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
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10+ | 3.05 EUR |
2SC3519 |
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auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
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10+ | 3.05 EUR |
2SC3519 |
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Hersteller: Sanken Electric USA Inc.
Description: TRANS NPN 160V 15A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V
Frequency - Transition: 50MHz
Supplier Device Package: TO-3P
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 130 W
Description: TRANS NPN 160V 15A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V
Frequency - Transition: 50MHz
Supplier Device Package: TO-3P
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 130 W
auf Bestellung 1445 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.57 EUR |
10+ | 6.35 EUR |
100+ | 5.14 EUR |
1000+ | 3.91 EUR |
2SC3519A |
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Hersteller: Sanken Electric USA Inc.
Description: TRANS NPN 180V 15A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V
Frequency - Transition: 50MHz
Supplier Device Package: TO-3P
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 130 W
Description: TRANS NPN 180V 15A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V
Frequency - Transition: 50MHz
Supplier Device Package: TO-3P
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 130 W
auf Bestellung 3719 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.14 EUR |
10+ | 4.31 EUR |
100+ | 3.49 EUR |
500+ | 3.41 EUR |
2SC3519A |
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Hersteller: Sanken Electric Company, Ltd.
Trans GP BJT NPN 180V 15A 3-Pin(3+Tab) TO-3P
Trans GP BJT NPN 180V 15A 3-Pin(3+Tab) TO-3P
auf Bestellung 249 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
49+ | 3.22 EUR |
55+ | 2.77 EUR |
100+ | 2.56 EUR |
200+ | 2.44 EUR |
2SC3568(1)-S6-AZ |
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Hersteller: Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
auf Bestellung 771 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
125+ | 3.9 EUR |
2SC3568(2)-S6-AZ |
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Hersteller: Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
auf Bestellung 652 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
125+ | 3.9 EUR |
2SC3568(8)-AZ |
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Hersteller: Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
auf Bestellung 9976 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
125+ | 3.9 EUR |
2SC3568-AZ |
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Hersteller: Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 3A, 5V
Supplier Device Package: TO-220F
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 30 W
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 3A, 5V
Supplier Device Package: TO-220F
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 30 W
auf Bestellung 5270 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
127+ | 3.85 EUR |
2SC3571-AZ |
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Hersteller: Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Supplier Device Package: TO-220F
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 30 W
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Supplier Device Package: TO-220F
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 30 W
auf Bestellung 19025 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
136+ | 3.61 EUR |
2SC3576 |
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Hersteller: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Frequency - Transition: 250MHz
Supplier Device Package: 3-SPA
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Frequency - Transition: 250MHz
Supplier Device Package: 3-SPA
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
auf Bestellung 35650 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3806+ | 0.13 EUR |
2SC3576 |
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Hersteller: ONSEMI
Description: ONSEMI - 2SC3576 - 2SC3576, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SC3576 - 2SC3576, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 35650 Stücke:
Lieferzeit 14-21 Tag (e)2SC3576-AC |
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Hersteller: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 3-SPA
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 3-SPA
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11539+ | 0.049 EUR |
2SC3576-AC |
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Hersteller: ONSEMI
Description: ONSEMI - 2SC3576-AC - 2SC3576-AC, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SC3576-AC - 2SC3576-AC, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)2SC3576-JVC-AC |
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Hersteller: onsemi
Description: BIP NPN 0.3A 25V
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 3-SPA
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Description: BIP NPN 0.3A 25V
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 3-SPA
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
auf Bestellung 29359 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2219+ | 0.23 EUR |
2SC3576-JVC-AC |
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Hersteller: ONSEMI
Description: ONSEMI - 2SC3576-JVC-AC - EACH
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SC3576-JVC-AC - EACH
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 29359 Stücke:
Lieferzeit 14-21 Tag (e)2SC3576-MTK-AC |
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Hersteller: onsemi
Description: BIP NPN 0.3A 25V
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 3-SPA
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Description: BIP NPN 0.3A 25V
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 3-SPA
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4438+ | 0.11 EUR |
2SC3576-MTK-AC |
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Hersteller: ONSEMI
Description: ONSEMI - 2SC3576-MTK-AC - EACH
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SC3576-MTK-AC - EACH
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)2SC3583-T1B-A |
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Hersteller: Renesas Electronics Corporation
Description: 2SC3583 - MD
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SOT23-3 (TO-236)
Part Status: Obsolete
Description: 2SC3583 - MD
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SOT23-3 (TO-236)
Part Status: Obsolete
auf Bestellung 108160 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
666+ | 0.73 EUR |
2SC3585-T1B-A |
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Hersteller: Renesas Electronics Corporation
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SOT23-3 (TO-236)
Part Status: Obsolete
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SOT23-3 (TO-236)
Part Status: Obsolete
auf Bestellung 417384 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
833+ | 0.58 EUR |
2SC3591 |
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Hersteller: Sanyo
Description: NPN SILICON TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 50 W
Description: NPN SILICON TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 50 W
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
365+ | 1.33 EUR |
2SC3595D |
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Hersteller: Sanyo
Description: NPN EPITAXIAL PLANAR SILICON
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 2GHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.2 W
Description: NPN EPITAXIAL PLANAR SILICON
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 2GHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.2 W
auf Bestellung 7513 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
452+ | 1.07 EUR |
2SC3596E |
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Hersteller: onsemi
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 700MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.2 W
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 700MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.2 W
auf Bestellung 17014 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
437+ | 1.12 EUR |
2SC3596E |
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Hersteller: ONSEMI
Description: ONSEMI - 2SC3596E - 2SC3596E, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SC3596E - 2SC3596E, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 17014 Stücke:
Lieferzeit 14-21 Tag (e)2SC3597D |
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Hersteller: onsemi
Description: NPN SILICON TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
Frequency - Transition: 800MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.2 W
Description: NPN SILICON TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
Frequency - Transition: 800MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.2 W
auf Bestellung 7800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1902+ | 0.26 EUR |
2SC3597D |
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Hersteller: ONSEMI
Description: ONSEMI - 2SC3597D - 2SC3597D, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SC3597D - 2SC3597D, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)2SC3598E |
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Hersteller: onsemi
Description: NPN SILICON TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 500MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.2 W
Description: NPN SILICON TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 500MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.2 W
auf Bestellung 6800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2219+ | 0.23 EUR |
2SC3598E |
![]() |
Hersteller: ONSEMI
Description: ONSEMI - 2SC3598E - 2SC3598E, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SC3598E - 2SC3598E, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1043 Stücke:
Lieferzeit 14-21 Tag (e)2SC3599E |
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Hersteller: Sanyo
Description: NPN EPITAXIAL PLANAR SILICON
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 7mA, 70mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 500MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.2 W
Description: NPN EPITAXIAL PLANAR SILICON
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 7mA, 70mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 500MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.2 W
auf Bestellung 4405 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
460+ | 1.06 EUR |
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