Suchergebnisse für "12N50" : > 120
Art der Ansicht :
Mindestbestellmenge: 268
Mindestbestellmenge: 268
Mindestbestellmenge: 13
Mindestbestellmenge: 7
Mindestbestellmenge: 15
Mindestbestellmenge: 2500
Mindestbestellmenge: 8
Mindestbestellmenge: 6
Mindestbestellmenge: 11
Mindestbestellmenge: 14
Mindestbestellmenge: 7
Mindestbestellmenge: 14
Mindestbestellmenge: 7
Mindestbestellmenge: 15
Mindestbestellmenge: 1000
Mindestbestellmenge: 8
Mindestbestellmenge: 500
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SPI12N50C3XKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 560V 11.6A TO262-3Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 500µA Supplier Device Package: PG-TO262-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 560 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 950 Stücke: Lieferzeit 21-28 Tag (e) |
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SPP12N50C3XKSA1 | Infineon Technologies |
Description: LOW POWER_LEGACY Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 500µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 10979 Stücke: Lieferzeit 21-28 Tag (e) |
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STD12N50DM2 | STMicroelectronics |
MOSFET N-channel 500 V, 0.299 Ohm typ 11 A MDmesh DM2 Power MOSFET |
auf Bestellung 1527 Stücke: Lieferzeit 14-28 Tag (e) |
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STD12N50DM2 | STMicroelectronics |
Description: MOSFET N-CH 500V 11A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V |
auf Bestellung 2490 Stücke: Lieferzeit 21-28 Tag (e) |
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STD12N50M2 | STMicroelectronics |
MOSFET N-channel 500 V, 0.325 Ohm typ 10 A MDmesh M2 Power MOSFET |
auf Bestellung 910 Stücke: Lieferzeit 14-28 Tag (e) |
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STD12N50M2 | STMicroelectronics |
Description: MOSFET N-CH 500V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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STD12N50M2 | STMicroelectronics |
Description: MOSFET N-CH 500V 10A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V |
auf Bestellung 3439 Stücke: Lieferzeit 21-28 Tag (e) |
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STF12N50DM2 | STMicroelectronics |
Description: MOSFET N-CH 500V 11A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V |
auf Bestellung 990 Stücke: Lieferzeit 21-28 Tag (e) |
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STF12N50DM2 | STMicroelectronics |
MOSFET N-channel 500 V, 0.299 Ohm typ 11 A MDmesh DM2 Power MOSFET |
auf Bestellung 1000 Stücke: Lieferzeit 126-140 Tag (e) |
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STF12N50M2 | STMicroelectronics |
MOSFET N-channel 500 V, 0.325 Ohm typ 10 A MDmesh M2 Power MOSFET |
auf Bestellung 305 Stücke: Lieferzeit 14-28 Tag (e) |
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STF12N50M2 | STMicroelectronics |
Description: MOSFET N-CH 500V 10A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 100 V |
auf Bestellung 472 Stücke: Lieferzeit 21-28 Tag (e) |
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STP12N50M2 | STMicroelectronics |
MOSFET N-channel 500 V, 0.325 Ohm typ 10 A MDmesh M2 Power MOSFET in TO-220 package |
auf Bestellung 223 Stücke: Lieferzeit 14-28 Tag (e) |
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STP12N50M2 | STMicroelectronics |
Description: MOSFET N-CH 500V 10A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 100 V |
auf Bestellung 844 Stücke: Lieferzeit 21-28 Tag (e) |
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ZXT12N50DXTA | Diodes Incorporated |
Bipolar Transistors - BJT Dual 50V NPN |
auf Bestellung 971 Stücke: Lieferzeit 14-28 Tag (e) |
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ZXT12N50DXTA | Diodes Incorporated |
Description: TRANS 2NPN 50V 3A 8MSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.04W Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Frequency - Transition: 132MHz Supplier Device Package: 8-MSOP Part Status: Active |
auf Bestellung 64000 Stücke: Lieferzeit 21-28 Tag (e) |
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ZXT12N50DXTA | Diodes Incorporated |
Description: TRANS 2NPN 50V 3A 8MSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.04W Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Frequency - Transition: 132MHz Supplier Device Package: 8-MSOP Part Status: Active |
auf Bestellung 64516 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOTF12N50 | Alpha & Omega Semiconductor |
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auf Bestellung 995 Stücke: Lieferzeit 21-28 Tag (e) |
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| CHV1812N500104KXT | CAL |
SMD |
auf Bestellung 86200 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQB12N50 | FAIRCHILD | TO-263 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQB12N50 | fairchild | to-263/d2-pak |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQB12N50 | FAIRCHILD | 07+ SOT-263 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQB12N50 | FAIRCHILD | SOT-263 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQPF12N50C |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| MDF12N50FTH |
auf Bestellung 11497 Stücke: Lieferzeit 21-28 Tag (e) |
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| MDF12N50TH |
auf Bestellung 3723 Stücke: Lieferzeit 21-28 Tag (e) |
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| MDP12N50TH |
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTB12N50 |
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auf Bestellung 8646 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTB12N50T4 |
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auf Bestellung 5589 Stücke: Lieferzeit 21-28 Tag (e) |
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| R1112N501B | RICOH | 06+ |
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SPA12N50C3 | INF | 08+ |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SPA12N50C3 | INFINEON | 09+ SOT-23 |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SPA12N50C3XK |
auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) |
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| SPB12N50C3 | INFINEON | TO-263/D2-PAK |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SPB12N50C3 | Infineon technologies |
auf Bestellung 975 Stücke: Lieferzeit 21-28 Tag (e) |
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| SPB12N50C3 | INFINEON |
auf Bestellung 1200 Stücke: Lieferzeit 21-28 Tag (e) |
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| SPB12N50C3 | INFINEON | 07+ TO-263/D2-PAK |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SPI12N50C3 |
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auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SPP12N50C3 | Infineon technologies |
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auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
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| SPP12N50C3 | INF |
07+; |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SPW12N50C3 | INF |
07+; |
auf Bestellung 140 Stücke: Lieferzeit 21-28 Tag (e) |
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| T12N50DX |
auf Bestellung 6480 Stücke: Lieferzeit 21-28 Tag (e) |
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| ZXT12N50DX | ZETEX | 07+ MSOP8 |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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| ZXT12N50DX | ZETEX | MSOP8 |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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| ZXT12N50DXTA |
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auf Bestellung 1050 Stücke: Lieferzeit 21-28 Tag (e) |
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| ZXT12N50DXTC |
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auf Bestellung 6100 Stücke: Lieferzeit 21-28 Tag (e) |
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76512.18.08 | Prysmian Group |
Description: HOOK-UP STRND 16AWG BROWN 500' Packaging: Bulk Voltage: 600V Length: 500.0' (152.4m) Wire Gauge: 16 AWG Jacket (Insulation) Material: Poly-Vinyl Chloride (PVC) Conductor Strand: 26/30 Operating Temperature: -20°C ~ 105°C Cable Type: Hook-Up Jacket (Insulation) Diameter: 0.123" (3.12mm) Ratings: UL Style 1015/1335, ASTM B-8 Jacket (Insulation) Thickness: 0.031" (0.80mm) Conductor Material: Copper, Annealed Bare Jacket Color: Brown |
auf Bestellung 4 Stücke: Lieferzeit 21-28 Tag (e) |
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76812.R8.08 | Prysmian Group |
Description: HOOK-UP STRND 14AWG BROWN Packaging: Bulk Voltage: 600V Length: 500.0' (152.4m) Wire Gauge: 14 AWG Jacket (Insulation) Material: Poly-Vinyl Chloride (PVC) Conductor Strand: 19/0.0147" Operating Temperature: -20°C ~ 105°C Cable Type: Hook-Up Jacket (Insulation) Diameter: 0.136" (3.45mm) Ratings: UL Style 1015/1335, ASTM B-8 Jacket (Insulation) Thickness: 0.031" (0.80mm) Conductor Material: Copper, Annealed Bare Jacket Color: Brown |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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A98150-512 | Omnetics |
Description: CABLE ASSY D-MIC-D 51P 457.2MM Packaging: Bag Contact Finish: Gold Color: Multiple, Individual Length: 1.50' (457.20mm) Shielding: Unshielded Number of Positions: 51 Type: D-Type, Micro-D 1st Connector: Plug, Male Pins 2nd Connector: Individual Wire Leads Contact Finish Thickness: 50.0µin (1.27µm) Part Status: Active |
auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) |
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MDF12N50FTH Produktcode: 158661 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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SPP12N50C3 Produktcode: 47987 |
Verschiedene Bauteile > Verschiedene Bauteile 2 |
Produkt ist nicht verfügbar
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STF12N50DM2 Produktcode: 181822 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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| ACB-12-N-50A | OPTIFUSE |
Category: Other Car Fuses Description: Fuse: fuse; 50A; 12VDC; automotive; 31.8x20.51x17.27mm Manufacturer series: Automotive Type I Type of fuse: fuse Current rating: 50A Fuse size: 31.8x20.51x17.27mm Rated voltage: 12V DC Kind of fuse: automotive Anzahl je Verpackung: 100 Stücke |
Produkt ist nicht verfügbar |
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| ACBP-12-N-50A | OPTIFUSE |
Category: Other Car Fuses Description: Fuse: fuse; 50A; 12VDC; automotive; 31x21x16.6mm Manufacturer series: Automotive Type I Type of fuse: fuse Current rating: 50A Fuse size: 31x21x16.6mm Rated voltage: 12V DC Kind of fuse: automotive Anzahl je Verpackung: 100 Stücke |
Produkt ist nicht verfügbar |
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AOB12N50L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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AOT12N50 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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AOT12N50 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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AOW12N50 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |
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AOWF12N50 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-262F Tube |
Produkt ist nicht verfügbar |
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| C12N50Z4 | TTM Technologies Trading (Asia) Company Limited |
Description: SMD TERM 12W 50 OHM 6GHZ 1206 Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Function: Termination Frequency: 6GHz RF Type: AMPS, Cellular, DCS, GSM, PCS, PHS, UMTS Secondary Attributes: 12W |
Produkt ist nicht verfügbar |
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CHV1812N500100JCT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 NPO 10PF 5% 500V Tolerance: ±5% Features: General Purpose Packaging: Cut Tape (CT) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Applications: General Purpose Thickness (Max): 0.071" (1.80mm) Capacitance: 10 pF |
Produkt ist nicht verfügbar |
| SPI12N50C3XKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 11.6A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 560V 11.6A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 950 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 268+ | 2.73 EUR |
| SPP12N50C3XKSA1 |
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Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 10979 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 268+ | 2.73 EUR |
| STD12N50DM2 |
|
Hersteller: STMicroelectronics
MOSFET N-channel 500 V, 0.299 Ohm typ 11 A MDmesh DM2 Power MOSFET
MOSFET N-channel 500 V, 0.299 Ohm typ 11 A MDmesh DM2 Power MOSFET
auf Bestellung 1527 Stücke:
Lieferzeit 14-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 4.29 EUR |
| 15+ | 3.59 EUR |
| 100+ | 2.86 EUR |
| 500+ | 2.4 EUR |
| 1000+ | 2.04 EUR |
| 2500+ | 1.93 EUR |
| 5000+ | 1.87 EUR |
| STD12N50DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V
Description: MOSFET N-CH 500V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V
auf Bestellung 2490 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 4.32 EUR |
| 10+ | 3.58 EUR |
| 100+ | 2.85 EUR |
| 500+ | 2.41 EUR |
| 1000+ | 2.05 EUR |
| STD12N50M2 |
|
Hersteller: STMicroelectronics
MOSFET N-channel 500 V, 0.325 Ohm typ 10 A MDmesh M2 Power MOSFET
MOSFET N-channel 500 V, 0.325 Ohm typ 10 A MDmesh M2 Power MOSFET
auf Bestellung 910 Stücke:
Lieferzeit 14-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 3.67 EUR |
| 18+ | 3.02 EUR |
| 100+ | 2.34 EUR |
| 500+ | 1.98 EUR |
| 1000+ | 1.61 EUR |
| 2500+ | 1.52 EUR |
| 5000+ | 1.45 EUR |
| STD12N50M2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
Description: MOSFET N-CH 500V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.53 EUR |
| STD12N50M2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
Description: MOSFET N-CH 500V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
auf Bestellung 3439 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 3.69 EUR |
| 10+ | 3.03 EUR |
| 100+ | 2.36 EUR |
| 500+ | 2 EUR |
| 1000+ | 1.63 EUR |
| STF12N50DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V
Description: MOSFET N-CH 500V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V
auf Bestellung 990 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 5.04 EUR |
| 50+ | 4.04 EUR |
| 100+ | 3.33 EUR |
| 500+ | 2.82 EUR |
| STF12N50DM2 |
|
Hersteller: STMicroelectronics
MOSFET N-channel 500 V, 0.299 Ohm typ 11 A MDmesh DM2 Power MOSFET
MOSFET N-channel 500 V, 0.299 Ohm typ 11 A MDmesh DM2 Power MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 126-140 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 5.02 EUR |
| 13+ | 4.03 EUR |
| 100+ | 3.3 EUR |
| 250+ | 3.25 EUR |
| 500+ | 2.81 EUR |
| 1000+ | 2.37 EUR |
| 2000+ | 2.25 EUR |
| STF12N50M2 |
|
Hersteller: STMicroelectronics
MOSFET N-channel 500 V, 0.325 Ohm typ 10 A MDmesh M2 Power MOSFET
MOSFET N-channel 500 V, 0.325 Ohm typ 10 A MDmesh M2 Power MOSFET
auf Bestellung 305 Stücke:
Lieferzeit 14-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 3.85 EUR |
| 17+ | 3.07 EUR |
| 100+ | 2.54 EUR |
| 250+ | 2.51 EUR |
| 500+ | 2.09 EUR |
| 1000+ | 1.8 EUR |
| 2000+ | 1.71 EUR |
| STF12N50M2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 100 V
Description: MOSFET N-CH 500V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 100 V
auf Bestellung 472 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 3.87 EUR |
| 50+ | 3.12 EUR |
| 100+ | 2.57 EUR |
| STP12N50M2 |
|
Hersteller: STMicroelectronics
MOSFET N-channel 500 V, 0.325 Ohm typ 10 A MDmesh M2 Power MOSFET in TO-220 package
MOSFET N-channel 500 V, 0.325 Ohm typ 10 A MDmesh M2 Power MOSFET in TO-220 package
auf Bestellung 223 Stücke:
Lieferzeit 14-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 3.9 EUR |
| 17+ | 3.15 EUR |
| 100+ | 2.59 EUR |
| 250+ | 2.51 EUR |
| 500+ | 2.16 EUR |
| 1000+ | 1.85 EUR |
| 2000+ | 1.75 EUR |
| STP12N50M2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 100 V
Description: MOSFET N-CH 500V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 100 V
auf Bestellung 844 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 3.93 EUR |
| 50+ | 3.15 EUR |
| 100+ | 2.59 EUR |
| 500+ | 2.19 EUR |
| ZXT12N50DXTA |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT Dual 50V NPN
Bipolar Transistors - BJT Dual 50V NPN
auf Bestellung 971 Stücke:
Lieferzeit 14-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 3.64 EUR |
| 18+ | 2.96 EUR |
| 100+ | 2.31 EUR |
| 500+ | 1.96 EUR |
| 1000+ | 1.59 EUR |
| 2000+ | 1.5 EUR |
| 5000+ | 1.43 EUR |
| ZXT12N50DXTA |
|
Hersteller: Diodes Incorporated
Description: TRANS 2NPN 50V 3A 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.04W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Frequency - Transition: 132MHz
Supplier Device Package: 8-MSOP
Part Status: Active
Description: TRANS 2NPN 50V 3A 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.04W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Frequency - Transition: 132MHz
Supplier Device Package: 8-MSOP
Part Status: Active
auf Bestellung 64000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 1.6 EUR |
| 2000+ | 1.51 EUR |
| 5000+ | 1.44 EUR |
| 10000+ | 1.37 EUR |
| ZXT12N50DXTA |
|
Hersteller: Diodes Incorporated
Description: TRANS 2NPN 50V 3A 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.04W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Frequency - Transition: 132MHz
Supplier Device Package: 8-MSOP
Part Status: Active
Description: TRANS 2NPN 50V 3A 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.04W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Frequency - Transition: 132MHz
Supplier Device Package: 8-MSOP
Part Status: Active
auf Bestellung 64516 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 3.64 EUR |
| 10+ | 2.99 EUR |
| 100+ | 2.32 EUR |
| 500+ | 1.97 EUR |
| AOTF12N50 |
|
Hersteller: Alpha & Omega Semiconductor
auf Bestellung 995 Stücke:
Lieferzeit 21-28 Tag (e)| SPB12N50C3 |
Hersteller: INFINEON
07+ TO-263/D2-PAK
07+ TO-263/D2-PAK
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)| 76512.18.08 |
|
Hersteller: Prysmian Group
Description: HOOK-UP STRND 16AWG BROWN 500'
Packaging: Bulk
Voltage: 600V
Length: 500.0' (152.4m)
Wire Gauge: 16 AWG
Jacket (Insulation) Material: Poly-Vinyl Chloride (PVC)
Conductor Strand: 26/30
Operating Temperature: -20°C ~ 105°C
Cable Type: Hook-Up
Jacket (Insulation) Diameter: 0.123" (3.12mm)
Ratings: UL Style 1015/1335, ASTM B-8
Jacket (Insulation) Thickness: 0.031" (0.80mm)
Conductor Material: Copper, Annealed Bare
Jacket Color: Brown
Description: HOOK-UP STRND 16AWG BROWN 500'
Packaging: Bulk
Voltage: 600V
Length: 500.0' (152.4m)
Wire Gauge: 16 AWG
Jacket (Insulation) Material: Poly-Vinyl Chloride (PVC)
Conductor Strand: 26/30
Operating Temperature: -20°C ~ 105°C
Cable Type: Hook-Up
Jacket (Insulation) Diameter: 0.123" (3.12mm)
Ratings: UL Style 1015/1335, ASTM B-8
Jacket (Insulation) Thickness: 0.031" (0.80mm)
Conductor Material: Copper, Annealed Bare
Jacket Color: Brown
auf Bestellung 4 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 224.64 EUR |
| 3+ | 207.83 EUR |
| 76812.R8.08 |
|
Hersteller: Prysmian Group
Description: HOOK-UP STRND 14AWG BROWN
Packaging: Bulk
Voltage: 600V
Length: 500.0' (152.4m)
Wire Gauge: 14 AWG
Jacket (Insulation) Material: Poly-Vinyl Chloride (PVC)
Conductor Strand: 19/0.0147"
Operating Temperature: -20°C ~ 105°C
Cable Type: Hook-Up
Jacket (Insulation) Diameter: 0.136" (3.45mm)
Ratings: UL Style 1015/1335, ASTM B-8
Jacket (Insulation) Thickness: 0.031" (0.80mm)
Conductor Material: Copper, Annealed Bare
Jacket Color: Brown
Description: HOOK-UP STRND 14AWG BROWN
Packaging: Bulk
Voltage: 600V
Length: 500.0' (152.4m)
Wire Gauge: 14 AWG
Jacket (Insulation) Material: Poly-Vinyl Chloride (PVC)
Conductor Strand: 19/0.0147"
Operating Temperature: -20°C ~ 105°C
Cable Type: Hook-Up
Jacket (Insulation) Diameter: 0.136" (3.45mm)
Ratings: UL Style 1015/1335, ASTM B-8
Jacket (Insulation) Thickness: 0.031" (0.80mm)
Conductor Material: Copper, Annealed Bare
Jacket Color: Brown
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 500+ | 0.59 EUR |
| 1000+ | 0.56 EUR |
| A98150-512 |
|
Hersteller: Omnetics
Description: CABLE ASSY D-MIC-D 51P 457.2MM
Packaging: Bag
Contact Finish: Gold
Color: Multiple, Individual
Length: 1.50' (457.20mm)
Shielding: Unshielded
Number of Positions: 51
Type: D-Type, Micro-D
1st Connector: Plug, Male Pins
2nd Connector: Individual Wire Leads
Contact Finish Thickness: 50.0µin (1.27µm)
Part Status: Active
Description: CABLE ASSY D-MIC-D 51P 457.2MM
Packaging: Bag
Contact Finish: Gold
Color: Multiple, Individual
Length: 1.50' (457.20mm)
Shielding: Unshielded
Number of Positions: 51
Type: D-Type, Micro-D
1st Connector: Plug, Male Pins
2nd Connector: Individual Wire Leads
Contact Finish Thickness: 50.0µin (1.27µm)
Part Status: Active
auf Bestellung 25 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 996.81 EUR |
| 10+ | 923.71 EUR |
| SPP12N50C3 Produktcode: 47987 |
|
|
Produkt ist nicht verfügbar
| ACB-12-N-50A |
|
Hersteller: OPTIFUSE
Category: Other Car Fuses
Description: Fuse: fuse; 50A; 12VDC; automotive; 31.8x20.51x17.27mm
Manufacturer series: Automotive Type I
Type of fuse: fuse
Current rating: 50A
Fuse size: 31.8x20.51x17.27mm
Rated voltage: 12V DC
Kind of fuse: automotive
Anzahl je Verpackung: 100 Stücke
Category: Other Car Fuses
Description: Fuse: fuse; 50A; 12VDC; automotive; 31.8x20.51x17.27mm
Manufacturer series: Automotive Type I
Type of fuse: fuse
Current rating: 50A
Fuse size: 31.8x20.51x17.27mm
Rated voltage: 12V DC
Kind of fuse: automotive
Anzahl je Verpackung: 100 Stücke
Produkt ist nicht verfügbar
| ACBP-12-N-50A |
|
Hersteller: OPTIFUSE
Category: Other Car Fuses
Description: Fuse: fuse; 50A; 12VDC; automotive; 31x21x16.6mm
Manufacturer series: Automotive Type I
Type of fuse: fuse
Current rating: 50A
Fuse size: 31x21x16.6mm
Rated voltage: 12V DC
Kind of fuse: automotive
Anzahl je Verpackung: 100 Stücke
Category: Other Car Fuses
Description: Fuse: fuse; 50A; 12VDC; automotive; 31x21x16.6mm
Manufacturer series: Automotive Type I
Type of fuse: fuse
Current rating: 50A
Fuse size: 31x21x16.6mm
Rated voltage: 12V DC
Kind of fuse: automotive
Anzahl je Verpackung: 100 Stücke
Produkt ist nicht verfügbar
| AOB12N50L |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
| AOT12N50 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
| AOT12N50 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
| AOW12N50 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-262 Tube
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-262 Tube
Produkt ist nicht verfügbar
| AOWF12N50 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-262F Tube
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-262F Tube
Produkt ist nicht verfügbar
| C12N50Z4 |
|
Hersteller: TTM Technologies Trading (Asia) Company Limited
Description: SMD TERM 12W 50 OHM 6GHZ 1206
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Function: Termination
Frequency: 6GHz
RF Type: AMPS, Cellular, DCS, GSM, PCS, PHS, UMTS
Secondary Attributes: 12W
Description: SMD TERM 12W 50 OHM 6GHZ 1206
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Function: Termination
Frequency: 6GHz
RF Type: AMPS, Cellular, DCS, GSM, PCS, PHS, UMTS
Secondary Attributes: 12W
Produkt ist nicht verfügbar
| CHV1812N500100JCT |
|
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 NPO 10PF 5% 500V
Tolerance: ±5%
Features: General Purpose
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.071" (1.80mm)
Capacitance: 10 pF
Description: HVCAP1812 NPO 10PF 5% 500V
Tolerance: ±5%
Features: General Purpose
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.071" (1.80mm)
Capacitance: 10 pF
Produkt ist nicht verfügbar