Suchergebnisse für "20n50" : > 180
Art der Ansicht :
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 520N50010CTR | CTS-Frequency Controls |
 Description: 2.5mm x 2.0mm Surface Mount ClipPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: Clipped Sine Wave Type: TCXO Operating Temperature: -20°C ~ 70°C Frequency Stability: ±1ppm Voltage - Supply: 2.5V Current - Supply (Max): 2.5mA Height - Seated (Max): 0.039" (1.00mm) Part Status: Active Frequency: 50 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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| 520N50010CTR | CTS Electronic Components |
TCXO Oscillators 2.5mm x 2.0mm Surface Mount Clipped Sine TCXO, 50.000000MHz, +2.5V, 1.0ppm Stability, -20/+70 C, 3k/reel |
Produkt ist nicht verfügbar |
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| 520N50010DTR | CTS-Frequency Controls |
Description: 2.5mm x 2.0mm Surface Mount Clip Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: Clipped Sine Wave Type: TCXO Operating Temperature: -30°C ~ 85°C Frequency Stability: ±1ppm Voltage - Supply: 2.5V Current - Supply (Max): 2.5mA Height - Seated (Max): 0.039" (1.00mm) Part Status: Active Frequency: 50 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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| 520N50010DTR | CTS Electronic Components |
TCXO Oscillators 2.5mm x 2.0mm Surface Mount Clipped Sine TCXO, 50.000000MHz, +2.5V, 1.0ppm Stability, -30/+85 C, 3k/reel |
Produkt ist nicht verfügbar |
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| 520N50015DTR | CTS-Frequency Controls |
Description: 2.5mm x 2.0mm Surface Mount Clip Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: Clipped Sine Wave Type: TCXO Operating Temperature: -30°C ~ 85°C Frequency Stability: ±1.5ppm Voltage - Supply: 2.5V Current - Supply (Max): 2.5mA Height - Seated (Max): 0.039" (1.00mm) Part Status: Active Frequency: 50 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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| 520N50015ITR | CTS-Frequency Controls |
Description: 2.5mm x 2.0mm Surface Mount Clip Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: Clipped Sine Wave Type: TCXO Operating Temperature: -40°C ~ 85°C Frequency Stability: ±1.5ppm Voltage - Supply: 2.5V Current - Supply (Max): 2.5mA Height - Seated (Max): 0.039" (1.00mm) Part Status: Active Frequency: 50 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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| 520N50020CTR | CTS-Frequency Controls |
Description: 2.5mm x 2.0mm Surface Mount Clip Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: Clipped Sine Wave Type: TCXO Operating Temperature: -20°C ~ 70°C Frequency Stability: ±2ppm Voltage - Supply: 2.5V Current - Supply (Max): 2.5mA Height - Seated (Max): 0.039" (1.00mm) Part Status: Active Frequency: 50 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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| 520N50020DTR | CTS-Frequency Controls |
Description: 2.5mm x 2.0mm Surface Mount Clip Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: Clipped Sine Wave Type: TCXO Operating Temperature: -30°C ~ 85°C Frequency Stability: ±2ppm Voltage - Supply: 2.5V Current - Supply (Max): 2.5mA Height - Seated (Max): 0.039" (1.00mm) Part Status: Active Frequency: 50 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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| 520N50020DTR | CTS Electronic Components |
TCXO Oscillators 2.5mm x 2.0mm Surface Mount Clipped Sine TCXO, 50.000000MHz, +2.5V, 2.0ppm Stability, -30/+85 C, 3k/reel |
Produkt ist nicht verfügbar |
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| 520N50020ITR | CTS-Frequency Controls |
Description: 2.5mm x 2.0mm Surface Mount Clip Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: Clipped Sine Wave Type: TCXO Operating Temperature: -40°C ~ 85°C Frequency Stability: ±2ppm Voltage - Supply: 2.5V Current - Supply (Max): 2.5mA Height - Seated (Max): 0.039" (1.00mm) Part Status: Active Frequency: 50 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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| 520N50025CTR | CTS-Frequency Controls |
Description: 2.5mm x 2.0mm Surface Mount Clip Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: Clipped Sine Wave Type: TCXO Operating Temperature: -20°C ~ 70°C Frequency Stability: ±2.5ppm Voltage - Supply: 2.5V Current - Supply (Max): 2.5mA Height - Seated (Max): 0.039" (1.00mm) Part Status: Active Frequency: 50 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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| 520N50025DTR | CTS-Frequency Controls |
Description: 2.5mm x 2.0mm Surface Mount Clip Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: Clipped Sine Wave Type: TCXO Operating Temperature: -30°C ~ 85°C Frequency Stability: ±2.5ppm Voltage - Supply: 2.5V Current - Supply (Max): 2.5mA Height - Seated (Max): 0.039" (1.00mm) Part Status: Active Frequency: 50 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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| 520N50025DTR | CTS Electronic Components |
TCXO Oscillators 2.5mm x 2.0mm Surface Mount Clipped Sine TCXO, 50.000000MHz, +2.5V, 2.5ppm Stability, -30/+85 C, 3k/reel |
Produkt ist nicht verfügbar |
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5920_N-50-025/19-_NE | HUBER+SUHNER |
Attenuators - Interconnects N plug(m) to N jack(f), 20dB, 25W |
Produkt ist nicht verfügbar |
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5920_N-50-050/19-_NE | HUBER+SUHNER |
Attenuators - Interconnects N plug(m) to N jack(f), 20dB, 50W |
Produkt ist nicht verfügbar |
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6820_N-50-1/1--_NE | HUBER+SUHNER |
Attenuators - Interconnects N plug(m) to N jack(f), 20dB, 2W |
Produkt ist nicht verfügbar |
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C20N50Z4B | Anaren |
High Frequency/RF Resistors |
Produkt ist nicht verfügbar |
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| C20N50Z4B | TTM Technologies, Inc. |
Description: SMD TERM 20W 50 OHM 6GHZ 1210 Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Function: Termination Frequency: 6GHz RF Type: 5G, AMPS, Cellular, DCS, GSM, LTE, PCS, PHS, UMTS Secondary Attributes: 20W Part Status: Active |
Produkt ist nicht verfügbar |
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CHV2220N500102FCT | Cal-Chip Electronics, Inc. |
Description: HVCAP2220 COG 1000PF 1% 500V Packaging: Cut Tape (CT) Tolerance: ±1% Features: High Voltage Voltage - Rated: 500V Package / Case: 2220 (5750 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.071" (1.80mm) Capacitance: 1000 pF |
Produkt ist nicht verfügbar |
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CHV2220N500102JCT | Cal-Chip Electronics, Inc. |
Description: HVCAP2220 COG 1000PF 5% 500V Packaging: Cut Tape (CT) Tolerance: ±5% Features: High Voltage Voltage - Rated: 500V Package / Case: 2220 (5750 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 1000 pF |
Produkt ist nicht verfügbar |
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CHV2220N500104KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP2220 X7R .1UF 10% 500V Tolerance: ±10% Features: High Voltage Packaging: Cut Tape (CT) Voltage - Rated: 500V Package / Case: 2220 (5750 Metric) Temperature Coefficient: X7R Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.1 µF |
Produkt ist nicht verfügbar |
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CHV2220N500105KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP2220 X7R 1UF 10% 500V Packaging: Tape & Reel (TR) Tolerance: ±10% Features: High Voltage Voltage - Rated: 500V Package / Case: 2220 (5750 Metric) Temperature Coefficient: X7R Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.087" (2.20mm) Capacitance: 1 µF |
Produkt ist nicht verfügbar |
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CHV2220N500393KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP2220 X7R .039UF 10% 500V Packaging: Cut Tape (CT) Tolerance: ±10% Features: High Voltage Voltage - Rated: 500V Package / Case: 2220 (5750 Metric) Temperature Coefficient: X7R Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.039 µF |
Produkt ist nicht verfügbar |
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CHV2220N500474KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP2220 X7R .47UF 10% 500V Tolerance: ±10% Features: High Voltage Packaging: Tape & Reel (TR) Voltage - Rated: 500V Package / Case: 2220 (5750 Metric) Temperature Coefficient: X7R Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.47 µF |
Produkt ist nicht verfügbar |
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CHV2220N500684KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP2220 X7R .68UF 10% 500V Packaging: Tape & Reel (TR) Tolerance: ±10% Features: High Voltage Voltage - Rated: 500V Package / Case: 2220 (5750 Metric) Temperature Coefficient: X7R Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.68 µF |
Produkt ist nicht verfügbar |
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FDA20N50-F109 | onsemi |
Description: MOSFET N-CH 500V 22A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |
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FDA20N50-F109 | ON Semiconductor |
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FDA20N50F | onsemi |
Description: MOSFET N-CH 500V 22A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V Power Dissipation (Max): 388W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDA20N50F | ON Semiconductor |
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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| FDB20N50F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.9A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FDB20N50F | onsemi |
Description: MOSFET N-CH 500V 20A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDB20N50F | ON Semiconductor |
Trans MOSFET N-CH 500V 20A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FDP20N50 | ON Semiconductor |
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FDP20N50F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 250W; TO220-3 Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.9A Pulsed drain current: 80A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FDP20N50F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 250W; TO220-3 Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.9A Pulsed drain current: 80A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDP20N50F | ON Semiconductor |
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FDPF20N50 | ON Semiconductor |
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FDPF20N50FT | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.9A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FDPF20N50FT | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.9A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDPF20N50FT | onsemi |
Description: MOSFET N-CH 500V 20A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V Power Dissipation (Max): 38.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDPF20N50FT | ON Semiconductor |
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FDPF20N50T | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 38.5W Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.9A Pulsed drain current: 80A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 59.5nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FDPF20N50T | onsemi |
Description: MOSFET N-CH 500V 20A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V Power Dissipation (Max): 38.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDPF20N50T | ON Semiconductor |
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IRFB20N50K | Vishay / Siliconix | MOSFET RECOMMENDED ALT IRFB20N50KPBF |
Produkt ist nicht verfügbar |
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IRFB20N50K | Vishay |
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IRFB20N50KPBF | Vishay |
 Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXFA20N50P3 | IXYS |
MOSFET Polar3 HiPerFET Power MOSFET |
Produkt ist nicht verfügbar |
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IXFB120N50P2 | Littelfuse |
Trans MOSFET N-CH 500V 120A 3-Pin(3+Tab) PLUS 264 |
Produkt ist nicht verfügbar |
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IXFH20N50P3 | Littelfuse |
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXFH20N50P3 | IXYS |
MOSFET Polar3 HiPerFET Power MOSFET |
Produkt ist nicht verfügbar |
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IXFP20N50P3 | Littelfuse Inc. |
Description: MOSFET N-CH 500V 8A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
Produkt ist nicht verfügbar |
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| IXFP20N50P3 | Littelfuse |
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXFP20N50P3M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8A; 58W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Power dissipation: 58W Case: TO220FP On-state resistance: 0.3Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IXFP20N50P3M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8A; 58W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Power dissipation: 58W Case: TO220FP On-state resistance: 0.3Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFP20N50P3M | IXYS |
Description: MOSFET N-CH 500V 8A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFP20N50P3M | IXYS |
MOSFET Polar3 HiPerFET Power MOSFET |
Produkt ist nicht verfügbar |
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IXTH20N50D | IXYS |
MOSFET 20 Amps 500V 0.33 Rds |
Produkt ist nicht verfügbar |
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IXTT20N50D | Littelfuse |
Trans MOSFET N-CH 500V 20A 3-Pin(2+Tab) D3PAK |
Produkt ist nicht verfügbar |
|
 |
IXTT20N50D | IXYS |
MOSFET 20 Amps 500V 0.33 Rds |
Produkt ist nicht verfügbar |
| 520N50010CTR |
|
Hersteller: CTS-Frequency Controls
Description: 2.5mm x 2.0mm Surface Mount Clip
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±1ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Description: 2.5mm x 2.0mm Surface Mount Clip
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±1ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
| 520N50010CTR |
|
Hersteller: CTS Electronic Components
TCXO Oscillators 2.5mm x 2.0mm Surface Mount Clipped Sine TCXO, 50.000000MHz, +2.5V, 1.0ppm Stability, -20/+70 C, 3k/reel
TCXO Oscillators 2.5mm x 2.0mm Surface Mount Clipped Sine TCXO, 50.000000MHz, +2.5V, 1.0ppm Stability, -20/+70 C, 3k/reel
Produkt ist nicht verfügbar
| 520N50010DTR |
|
Hersteller: CTS-Frequency Controls
Description: 2.5mm x 2.0mm Surface Mount Clip
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±1ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Description: 2.5mm x 2.0mm Surface Mount Clip
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±1ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
| 520N50010DTR |
|
Hersteller: CTS Electronic Components
TCXO Oscillators 2.5mm x 2.0mm Surface Mount Clipped Sine TCXO, 50.000000MHz, +2.5V, 1.0ppm Stability, -30/+85 C, 3k/reel
TCXO Oscillators 2.5mm x 2.0mm Surface Mount Clipped Sine TCXO, 50.000000MHz, +2.5V, 1.0ppm Stability, -30/+85 C, 3k/reel
Produkt ist nicht verfügbar
| 520N50015DTR |
|
Hersteller: CTS-Frequency Controls
Description: 2.5mm x 2.0mm Surface Mount Clip
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±1.5ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Description: 2.5mm x 2.0mm Surface Mount Clip
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±1.5ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
| 520N50015ITR |
|
Hersteller: CTS-Frequency Controls
Description: 2.5mm x 2.0mm Surface Mount Clip
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±1.5ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Description: 2.5mm x 2.0mm Surface Mount Clip
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±1.5ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
| 520N50020CTR |
|
Hersteller: CTS-Frequency Controls
Description: 2.5mm x 2.0mm Surface Mount Clip
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±2ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Description: 2.5mm x 2.0mm Surface Mount Clip
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±2ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
| 520N50020DTR |
|
Hersteller: CTS-Frequency Controls
Description: 2.5mm x 2.0mm Surface Mount Clip
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±2ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Description: 2.5mm x 2.0mm Surface Mount Clip
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±2ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
| 520N50020DTR |
|
Hersteller: CTS Electronic Components
TCXO Oscillators 2.5mm x 2.0mm Surface Mount Clipped Sine TCXO, 50.000000MHz, +2.5V, 2.0ppm Stability, -30/+85 C, 3k/reel
TCXO Oscillators 2.5mm x 2.0mm Surface Mount Clipped Sine TCXO, 50.000000MHz, +2.5V, 2.0ppm Stability, -30/+85 C, 3k/reel
Produkt ist nicht verfügbar
| 520N50020ITR |
|
Hersteller: CTS-Frequency Controls
Description: 2.5mm x 2.0mm Surface Mount Clip
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±2ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Description: 2.5mm x 2.0mm Surface Mount Clip
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±2ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
| 520N50025CTR |
|
Hersteller: CTS-Frequency Controls
Description: 2.5mm x 2.0mm Surface Mount Clip
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±2.5ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Description: 2.5mm x 2.0mm Surface Mount Clip
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±2.5ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
| 520N50025DTR |
|
Hersteller: CTS-Frequency Controls
Description: 2.5mm x 2.0mm Surface Mount Clip
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±2.5ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Description: 2.5mm x 2.0mm Surface Mount Clip
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±2.5ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 2.5mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
| 520N50025DTR |
|
Hersteller: CTS Electronic Components
TCXO Oscillators 2.5mm x 2.0mm Surface Mount Clipped Sine TCXO, 50.000000MHz, +2.5V, 2.5ppm Stability, -30/+85 C, 3k/reel
TCXO Oscillators 2.5mm x 2.0mm Surface Mount Clipped Sine TCXO, 50.000000MHz, +2.5V, 2.5ppm Stability, -30/+85 C, 3k/reel
Produkt ist nicht verfügbar
| 5920_N-50-025/19-_NE |
|
Hersteller: HUBER+SUHNER
Attenuators - Interconnects N plug(m) to N jack(f), 20dB, 25W
Attenuators - Interconnects N plug(m) to N jack(f), 20dB, 25W
Produkt ist nicht verfügbar
| 5920_N-50-050/19-_NE |
|
Hersteller: HUBER+SUHNER
Attenuators - Interconnects N plug(m) to N jack(f), 20dB, 50W
Attenuators - Interconnects N plug(m) to N jack(f), 20dB, 50W
Produkt ist nicht verfügbar
| 6820_N-50-1/1--_NE |
|
Hersteller: HUBER+SUHNER
Attenuators - Interconnects N plug(m) to N jack(f), 20dB, 2W
Attenuators - Interconnects N plug(m) to N jack(f), 20dB, 2W
Produkt ist nicht verfügbar
| C20N50Z4B |
|
Hersteller: TTM Technologies, Inc.
Description: SMD TERM 20W 50 OHM 6GHZ 1210
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Function: Termination
Frequency: 6GHz
RF Type: 5G, AMPS, Cellular, DCS, GSM, LTE, PCS, PHS, UMTS
Secondary Attributes: 20W
Part Status: Active
Description: SMD TERM 20W 50 OHM 6GHZ 1210
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Function: Termination
Frequency: 6GHz
RF Type: 5G, AMPS, Cellular, DCS, GSM, LTE, PCS, PHS, UMTS
Secondary Attributes: 20W
Part Status: Active
Produkt ist nicht verfügbar
| CHV2220N500102FCT |
|
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 COG 1000PF 1% 500V
Packaging: Cut Tape (CT)
Tolerance: ±1%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 1000 pF
Description: HVCAP2220 COG 1000PF 1% 500V
Packaging: Cut Tape (CT)
Tolerance: ±1%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 1000 pF
Produkt ist nicht verfügbar
| CHV2220N500102JCT |
|
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 COG 1000PF 5% 500V
Packaging: Cut Tape (CT)
Tolerance: ±5%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 1000 pF
Description: HVCAP2220 COG 1000PF 5% 500V
Packaging: Cut Tape (CT)
Tolerance: ±5%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 1000 pF
Produkt ist nicht verfügbar
| CHV2220N500104KXT |
|
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 X7R .1UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.1 µF
Description: HVCAP2220 X7R .1UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.1 µF
Produkt ist nicht verfügbar
| CHV2220N500105KXT |
|
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 X7R 1UF 10% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.087" (2.20mm)
Capacitance: 1 µF
Description: HVCAP2220 X7R 1UF 10% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.087" (2.20mm)
Capacitance: 1 µF
Produkt ist nicht verfügbar
| CHV2220N500393KXT |
|
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 X7R .039UF 10% 500V
Packaging: Cut Tape (CT)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.039 µF
Description: HVCAP2220 X7R .039UF 10% 500V
Packaging: Cut Tape (CT)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.039 µF
Produkt ist nicht verfügbar
| CHV2220N500474KXT |
|
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 X7R .47UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.47 µF
Description: HVCAP2220 X7R .47UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.47 µF
Produkt ist nicht verfügbar
| CHV2220N500684KXT |
|
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 X7R .68UF 10% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.68 µF
Description: HVCAP2220 X7R .68UF 10% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.68 µF
Produkt ist nicht verfügbar
| FDA20N50-F109 |
|
Hersteller: onsemi
Description: MOSFET N-CH 500V 22A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 500V 22A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
| FDA20N50-F109 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-3P Tube
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
| FDA20N50F |
|
Hersteller: onsemi
Description: MOSFET N-CH 500V 22A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V
Power Dissipation (Max): 388W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
Description: MOSFET N-CH 500V 22A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V
Power Dissipation (Max): 388W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
Produkt ist nicht verfügbar
| FDA20N50F |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-3P Tube
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
| FDB20N50F |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDB20N50F |
|
Hersteller: onsemi
Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
Produkt ist nicht verfügbar
| FDB20N50F |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 500V 20A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 500V 20A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
| FDP20N50 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
| FDP20N50F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDP20N50F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FDP20N50F |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
| FDPF20N50 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220FP Tube
Produkt ist nicht verfügbar
| FDPF20N50FT |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDPF20N50FT |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FDPF20N50FT |
|
Hersteller: onsemi
Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
Produkt ist nicht verfügbar
| FDPF20N50FT |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220FP Tube
Produkt ist nicht verfügbar
| FDPF20N50T |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 38.5W
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Pulsed drain current: 80A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 59.5nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 38.5W
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Pulsed drain current: 80A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 59.5nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDPF20N50T |
|
Hersteller: onsemi
Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Produkt ist nicht verfügbar
| FDPF20N50T |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220FP Tube
Produkt ist nicht verfügbar
| IRFB20N50K |
Hersteller: Vishay / Siliconix
MOSFET RECOMMENDED ALT IRFB20N50KPBF
MOSFET RECOMMENDED ALT IRFB20N50KPBF
Produkt ist nicht verfügbar
| IRFB20N50K |
|
Hersteller: Vishay
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
| IRFB20N50KPBF | |
|
Hersteller: Vishay
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
| IXFB120N50P2 |
|
Hersteller: Littelfuse
Trans MOSFET N-CH 500V 120A 3-Pin(3+Tab) PLUS 264
Trans MOSFET N-CH 500V 120A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
| IXFH20N50P3 |
|
Hersteller: Littelfuse
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AD
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
| IXFP20N50P3 |
|
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
| IXFP20N50P3 |
|
Hersteller: Littelfuse
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
| IXFP20N50P3M |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; 58W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 58W
Case: TO220FP
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; 58W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 58W
Case: TO220FP
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IXFP20N50P3M |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; 58W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 58W
Case: TO220FP
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; 58W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 58W
Case: TO220FP
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| IXFP20N50P3M |
|
Hersteller: IXYS
Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
| IXTT20N50D |
|
Hersteller: Littelfuse
Trans MOSFET N-CH 500V 20A 3-Pin(2+Tab) D3PAK
Trans MOSFET N-CH 500V 20A 3-Pin(2+Tab) D3PAK
Produkt ist nicht verfügbar