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SIHG20N50C SIHG20N50C
Produktcode: 44837
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Vishay Transistoren > MOSFET N-CH
Gehäuse: TO-247AC
Uds,V: 500
Idd,A: 20
Rds(on), Ohm: 02.07.2015
Ciss, pF/Qg, nC: 2400
JHGF: THT
auf Bestellung 19 Stück:
Lieferzeit 21-28 Tag (e)
1+1.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BD60120N50100AHF BD60120N50100AHF TTM Technologies, Inc. BD60120N50100AHF.pdf Description: BALUN 5.9GHZ-11.7GHZ 50/100 0404
Packaging: Cut Tape (CT)
Package / Case: 0404 (1010 Metric)
Mounting Type: Surface Mount
Frequency Range: 5.9GHz ~ 11.7GHz
Impedance - Unbalanced/Balanced: 50 / 100Ohm
Insertion Loss (Max): 0.8dB
Return Loss (Min): 15dB
Phase Difference:
Part Status: Active
auf Bestellung 2605 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.69 EUR
10+1.86 EUR
25+1.63 EUR
50+1.49 EUR
100+1.37 EUR
250+1.24 EUR
500+1.16 EUR
1000+1.09 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
C20N50Z4 TTM Technologies, Inc. C20N50Z4.pdf Description: RF ATTENUATOR 50OHM
Packaging: Cut Tape (CT)
Power (Watts): 20W
Package / Case: Nonstandard SMD
Impedance: 50 Ohms
Frequency Range: 0 Hz ~ 2.3 GHz
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.22 EUR
10+6.28 EUR
25+5.69 EUR
100+4.98 EUR
250+4.61 EUR
500+4.36 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
C20N50Z4 TTM Technologies, Inc. C20N50Z4.pdf Description: RF ATTENUATOR 50OHM
Packaging: Tape & Reel (TR)
Power (Watts): 20W
Package / Case: Nonstandard SMD
Part Status: Active
Impedance: 50 Ohms
Frequency Range: 0 Hz ~ 2.3 GHz
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.54 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
CHV2220N500102FCT CHV2220N500102FCT Cal-Chip Electronics, Inc. chv_series-1.pdf Description: HVCAP2220 COG 1000PF 1% 500V
Tolerance: ±1%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 1000 pF
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.68 EUR
10+6.58 EUR
50+5.32 EUR
100+4.92 EUR
500+4.25 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CHV2220N500102JCT CHV2220N500102JCT Cal-Chip Electronics, Inc. chv_series-1.pdf Description: HVCAP2220 COG 1000PF 5% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 1000 pF
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.08 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
CHV2220N500104KXT CHV2220N500104KXT Cal-Chip Electronics, Inc. chv_series-1.pdf Description: HVCAP2220 X7R .1UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.1 µF
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
500+1.76 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
CHV2220N500105KXT CHV2220N500105KXT Cal-Chip Electronics, Inc. chv_series-1.pdf Description: HVCAP2220 X7R 1UF 10% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.087" (2.20mm)
Capacitance: 1 µF
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
500+1.97 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
CHV2220N500105KXT CHV2220N500105KXT Cal-Chip Electronics, Inc. chv_series-1.pdf Description: HVCAP2220 X7R 1UF 10% 500V
Packaging: Cut Tape (CT)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.087" (2.20mm)
Capacitance: 1 µF
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.61 EUR
10+3.00 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
CHV2220N500393KXT CHV2220N500393KXT Cal-Chip Electronics, Inc. chv_series-1.pdf Description: HVCAP2220 X7R .039UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.039 µF
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.89 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
CHV2220N500474KXT CHV2220N500474KXT Cal-Chip Electronics, Inc. chv_series-1.pdf Description: HVCAP2220 X7R .47UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.47 µF
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.97 EUR
2000+0.91 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
CHV2220N500684KXT CHV2220N500684KXT Cal-Chip Electronics, Inc. chv_series-1.pdf Description: HVCAP2220 X7R .68UF 10% 500V
Packaging: Cut Tape (CT)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.68 µF
auf Bestellung 468 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.80 EUR
10+3.13 EUR
50+2.46 EUR
100+2.25 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDA20N50 FDA20N50 Fairchild Semiconductor FAIRS31552-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 500V 22A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 78050 Stücke:
Lieferzeit 10-14 Tag (e)
94+5.37 EUR
Mindestbestellmenge: 94
Im Einkaufswagen  Stück im Wert von  UAH
FDA20N50-F109 FDA20N50-F109 onsemi fda20n50_f109-d.pdf Description: MOSFET N-CH 500V 22A TO3PN
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
auf Bestellung 16600 Stücke:
Lieferzeit 10-14 Tag (e)
142+3.57 EUR
Mindestbestellmenge: 142
Im Einkaufswagen  Stück im Wert von  UAH
FDB20N50F FDB20N50F onsemi fdb20n50f-d.pdf Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
auf Bestellung 7290 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.90 EUR
10+4.67 EUR
100+3.35 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FDB20N50F FDB20N50F onsemi fdb20n50f-d.pdf Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.92 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
FDP20N50F FDP20N50F ONSEMI ONSM-S-A0003584205-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDP20N50F FDP20N50F onsemi ONSM-S-A0003584205-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 500V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
auf Bestellung 1116 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.69 EUR
50+3.41 EUR
100+3.10 EUR
500+2.54 EUR
1000+2.36 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FDPF20N50FT FDPF20N50FT ONSEMI FDPF20N50FT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDPF20N50FT Fairchild ONSM-S-A0003584205-1.pdf?t.download=true&u=5oefqw Transistor N-Channel MOSFET; 500V; 30V; 260mOhm; 20A; 38,5W; -55°C ~ 150°C; FDPF20N50FT TFDPF20n50ft
Anzahl je Verpackung: 5 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)
5+6.31 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
FDPF20N50FT FDPF20N50FT onsemi ONSM-S-A0003584205-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
auf Bestellung 653 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.22 EUR
50+3.71 EUR
100+3.37 EUR
500+2.77 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FDPF20N50T FDPF20N50T onsemi fdpf20n50t-d.pdf Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.99 EUR
50+4.14 EUR
100+3.77 EUR
500+3.12 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
HGTG20N50C1D HGTG20N50C1D Harris Corporation HRISD027-3-71.pdf?t.download=true&u=5oefqw Description: IGBT 500V 26A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
Supplier Device Package: TO-247
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector Pulsed (Icm): 35 A
Power - Max: 75 W
auf Bestellung 1732 Stücke:
Lieferzeit 10-14 Tag (e)
40+12.91 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
HGTH20N50C1 Harris Corporation HRISD027-3-61.pdf?t.download=true&u=5oefqw Description: IGBT 500V 20A TO-218 ISOLATED
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
Supplier Device Package: TO-218 Isolated
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector Pulsed (Icm): 35 A
Power - Max: 100 W
auf Bestellung 4984 Stücke:
Lieferzeit 10-14 Tag (e)
45+11.47 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
HGTH20N50E1 Harris Corporation HRISD027-3-61.pdf?t.download=true&u=5oefqw Description: IGBT 500V 20A TO-218 ISOLATED
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
Supplier Device Package: TO-218 Isolated
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector Pulsed (Icm): 35 A
Power - Max: 100 W
auf Bestellung 287 Stücke:
Lieferzeit 10-14 Tag (e)
89+5.73 EUR
Mindestbestellmenge: 89
Im Einkaufswagen  Stück im Wert von  UAH
HGTH20N50E1D Harris Corporation HRISD027-3-76.pdf?t.download=true&u=5oefqw Description: IGBT 500V 20A TO-218 ISOLATED
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
Supplier Device Package: TO-218 Isolated
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector Pulsed (Icm): 35 A
Power - Max: 100 W
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
90+5.73 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
HGTH20N50EID Harris Corporation Description: 20A, 500V, N CHANNEL IGBT WITH A
Packaging: Bulk
Part Status: Active
auf Bestellung 1433 Stücke:
Lieferzeit 10-14 Tag (e)
89+5.73 EUR
Mindestbestellmenge: 89
Im Einkaufswagen  Stück im Wert von  UAH
IGTH20N50 IGTH20N50 Harris Corporation TOCSS00194-1.pdf?t.download=true&u=5oefqw Description: IGBT 500V 20A TO-218 ISOLATED
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-218 Isolated
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
auf Bestellung 269 Stücke:
Lieferzeit 10-14 Tag (e)
110+4.63 EUR
Mindestbestellmenge: 110
Im Einkaufswagen  Stück im Wert von  UAH
IRFB20N50KPBF IRFB20N50KPBF VISHAY IRFB20N50K.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 514 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.73 EUR
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IRFB20N50KPBF IRFB20N50KPBF VISHAY IRFB20N50K.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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IRFB20N50KPBF Vishay irfb20n50k.pdf description Транзистор польовий TO220AB N-Ch MOSFET; Uds = 500V; Ids =12A; 280W
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IXFA20N50P3 IXFA20N50P3 IXYS IXFA(H,P,Q)20N50P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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IXFA20N50P3 IXFA20N50P3 IXYS IXFA(H,P,Q)20N50P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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50+3.22 EUR
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IXFH20N50P3 IXFH20N50P3 IXYS IXFA(H,P,Q)20N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 143 Stücke:
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IXFH20N50P3 IXFH20N50P3 IXYS IXFA(H,P,Q)20N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 143 Stücke:
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16+4.65 EUR
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IXFH20N50P3 IXFH20N50P3 Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_20n50p3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 303 Stücke:
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30+7.46 EUR
120+6.52 EUR
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IXFQ20N50P3 IXFQ20N50P3 IXYS IXFA(H,P,Q)20N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO3P
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 296 Stücke:
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11+7.14 EUR
17+4.38 EUR
18+4.13 EUR
270+3.98 EUR
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IXFQ20N50P3 IXFQ20N50P3 IXYS IXFA(H,P,Q)20N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO3P
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 296 Stücke:
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17+4.38 EUR
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IXFQ20N50P3 IXFQ20N50P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_20n50p3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 20A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 1170 Stücke:
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2+11.53 EUR
30+6.61 EUR
120+5.52 EUR
510+4.73 EUR
1020+4.69 EUR
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NB20N50104JBA NB20N50104JBA KYOCERA AVX nb21-nb12-nb20.pdf Description: THERM NTC 100KOHM 4160K 1206
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
B25/85: 4160K
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 100k
Resistance Tolerance: ±5%
Part Status: Active
Power - Max: 240 mW
Grade: Automotive
Qualification: AEC-Q200
auf Bestellung 6724 Stücke:
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23+0.77 EUR
27+0.67 EUR
28+0.63 EUR
30+0.59 EUR
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NB20N50104JBA NB20N50104JBA KYOCERA AVX nb21-nb12-nb20.pdf Description: THERM NTC 100KOHM 4160K 1206
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
B25/85: 4160K
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 100k
Resistance Tolerance: ±5%
Part Status: Active
Power - Max: 240 mW
Grade: Automotive
Qualification: AEC-Q200
auf Bestellung 3000 Stücke:
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3000+0.43 EUR
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NB20N50104KBA NB20N50104KBA KYOCERA AVX nb21-nb12-nb20.pdf Description: THERM NTC 100KOHM 4160K 1206
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
B25/85: 4160K
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 100k
Resistance Tolerance: ±10%
Part Status: Active
Power - Max: 240 mW
Grade: Automotive
Qualification: AEC-Q200
auf Bestellung 2024 Stücke:
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42+0.42 EUR
49+0.37 EUR
52+0.34 EUR
55+0.32 EUR
58+0.30 EUR
100+0.29 EUR
500+0.26 EUR
1000+0.24 EUR
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SIHA20N50E-GE3 SIHA20N50E-GE3 Vishay Siliconix siha20n50e.pdf Description: N-CHANNEL 500V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 1046 Stücke:
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100+2.81 EUR
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SIHA20N50E-GE3 SIHA20N50E-GE3 Vishay Siliconix siha20n50e.pdf Description: N-CHANNEL 500V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 1000 Stücke:
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1000+2.12 EUR
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SIHB20N50E-GE3 SIHB20N50E-GE3 Vishay Siliconix sihb20n50e.pdf Description: MOSFET N-CH 500V 19A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 2402 Stücke:
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4+5.12 EUR
10+3.78 EUR
100+2.67 EUR
500+2.49 EUR
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SIHG20N50C-E3 SIHG20N50C-E3 VISHAY SIHG20N50C-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 289 Stücke:
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23+3.23 EUR
28+2.57 EUR
29+2.52 EUR
30+2.43 EUR
31+2.35 EUR
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SIHG20N50C-E3 Siliconix sihg20n5.pdf Transistor: N-MOSFET unipolar 560V 11A 250W TO247AC VISHAY SIHG20N50C-E3 Transistor N-Channel THT SIHG20N50C-E3 TSIHG20n50c
Anzahl je Verpackung: 5 Stücke
auf Bestellung 12 Stücke:
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5+6.35 EUR
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SIHG20N50C-E3 SIHG20N50C-E3 VISHAY SIHG20N50C-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 289 Stücke:
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23+3.23 EUR
28+2.57 EUR
29+2.52 EUR
30+2.43 EUR
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SIHG20N50C-E3 Vishay sihg20n5.pdf Transistor: N-MOSFET unipolar 560V 11A 250W TO247AC VISHAY SIHG20N50C-E3 Transistor N-Channel THT SIHG20N50C-E3 TSIHG20n50c
Anzahl je Verpackung: 5 Stücke
auf Bestellung 100 Stücke:
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5+6.35 EUR
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SIHG20N50E-GE3 SIHG20N50E-GE3 Vishay Siliconix sihg20n50e.pdf Description: MOSFET N-CH 500V 19A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 473 Stücke:
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10+3.87 EUR
100+2.72 EUR
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SIHP20N50E-GE3 SIHP20N50E-GE3 Vishay Siliconix sihp20n50e.pdf Description: MOSFET N-CH 500V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 848 Stücke:
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10+3.90 EUR
100+2.79 EUR
500+2.28 EUR
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TSA20N50M Truesemi MOSFET силовой транзистор, TO-3P or TO247; 20.0A, 500V, RDS(on) = 0.26Ohm@VGS = 10 V
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1+7.87 EUR
10+7.22 EUR
100+6.53 EUR
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FDPF20N50 ON Semiconductor fdpf20n50-d.pdf
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FDPF20N50T ON Semiconductor fdpf20n50t-d.pdf
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MTH20N50
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MTM20N50
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MTV20N50E MOTO
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MTV20N50E/D
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MTW20N50E ON
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Lieferzeit 21-28 Tag (e)
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MTY20N50E/D
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SIHG20N50C
Produktcode: 44837
zu Favoriten hinzufügen Lieblingsprodukt

SIHG20N50C
Hersteller: Vishay
Transistoren > MOSFET N-CH
Gehäuse: TO-247AC
Uds,V: 500
Idd,A: 20
Rds(on), Ohm: 02.07.2015
Ciss, pF/Qg, nC: 2400
JHGF: THT
auf Bestellung 19 Stück:
Lieferzeit 21-28 Tag (e)
Anzahl Preis
1+1.50 EUR
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BD60120N50100AHF BD60120N50100AHF.pdf
BD60120N50100AHF
Hersteller: TTM Technologies, Inc.
Description: BALUN 5.9GHZ-11.7GHZ 50/100 0404
Packaging: Cut Tape (CT)
Package / Case: 0404 (1010 Metric)
Mounting Type: Surface Mount
Frequency Range: 5.9GHz ~ 11.7GHz
Impedance - Unbalanced/Balanced: 50 / 100Ohm
Insertion Loss (Max): 0.8dB
Return Loss (Min): 15dB
Phase Difference:
Part Status: Active
auf Bestellung 2605 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
10+1.86 EUR
25+1.63 EUR
50+1.49 EUR
100+1.37 EUR
250+1.24 EUR
500+1.16 EUR
1000+1.09 EUR
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C20N50Z4 C20N50Z4.pdf
Hersteller: TTM Technologies, Inc.
Description: RF ATTENUATOR 50OHM
Packaging: Cut Tape (CT)
Power (Watts): 20W
Package / Case: Nonstandard SMD
Impedance: 50 Ohms
Frequency Range: 0 Hz ~ 2.3 GHz
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.22 EUR
10+6.28 EUR
25+5.69 EUR
100+4.98 EUR
250+4.61 EUR
500+4.36 EUR
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C20N50Z4 C20N50Z4.pdf
Hersteller: TTM Technologies, Inc.
Description: RF ATTENUATOR 50OHM
Packaging: Tape & Reel (TR)
Power (Watts): 20W
Package / Case: Nonstandard SMD
Part Status: Active
Impedance: 50 Ohms
Frequency Range: 0 Hz ~ 2.3 GHz
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.54 EUR
Mindestbestellmenge: 1000
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CHV2220N500102FCT chv_series-1.pdf
CHV2220N500102FCT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 COG 1000PF 1% 500V
Tolerance: ±1%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 1000 pF
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.68 EUR
10+6.58 EUR
50+5.32 EUR
100+4.92 EUR
500+4.25 EUR
Mindestbestellmenge: 2
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CHV2220N500102JCT chv_series-1.pdf
CHV2220N500102JCT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 COG 1000PF 5% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 1000 pF
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.08 EUR
Mindestbestellmenge: 1000
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CHV2220N500104KXT chv_series-1.pdf
CHV2220N500104KXT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 X7R .1UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.1 µF
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+1.76 EUR
Mindestbestellmenge: 500
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CHV2220N500105KXT chv_series-1.pdf
CHV2220N500105KXT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 X7R 1UF 10% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.087" (2.20mm)
Capacitance: 1 µF
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+1.97 EUR
Mindestbestellmenge: 500
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CHV2220N500105KXT chv_series-1.pdf
CHV2220N500105KXT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 X7R 1UF 10% 500V
Packaging: Cut Tape (CT)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.087" (2.20mm)
Capacitance: 1 µF
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.61 EUR
10+3.00 EUR
Mindestbestellmenge: 4
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CHV2220N500393KXT chv_series-1.pdf
CHV2220N500393KXT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 X7R .039UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.039 µF
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.89 EUR
Mindestbestellmenge: 1000
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CHV2220N500474KXT chv_series-1.pdf
CHV2220N500474KXT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 X7R .47UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.47 µF
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.97 EUR
2000+0.91 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
CHV2220N500684KXT chv_series-1.pdf
CHV2220N500684KXT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 X7R .68UF 10% 500V
Packaging: Cut Tape (CT)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.68 µF
auf Bestellung 468 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.80 EUR
10+3.13 EUR
50+2.46 EUR
100+2.25 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDA20N50 FAIRS31552-1.pdf?t.download=true&u=5oefqw
FDA20N50
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 22A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 78050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
94+5.37 EUR
Mindestbestellmenge: 94
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FDA20N50-F109 fda20n50_f109-d.pdf
FDA20N50-F109
Hersteller: onsemi
Description: MOSFET N-CH 500V 22A TO3PN
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
auf Bestellung 16600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
142+3.57 EUR
Mindestbestellmenge: 142
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FDB20N50F fdb20n50f-d.pdf
FDB20N50F
Hersteller: onsemi
Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
auf Bestellung 7290 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.90 EUR
10+4.67 EUR
100+3.35 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FDB20N50F fdb20n50f-d.pdf
FDB20N50F
Hersteller: onsemi
Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.92 EUR
Mindestbestellmenge: 800
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FDP20N50F ONSM-S-A0003584205-1.pdf?t.download=true&u=5oefqw
FDP20N50F
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FDP20N50F ONSM-S-A0003584205-1.pdf?t.download=true&u=5oefqw
FDP20N50F
Hersteller: onsemi
Description: MOSFET N-CH 500V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
auf Bestellung 1116 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.69 EUR
50+3.41 EUR
100+3.10 EUR
500+2.54 EUR
1000+2.36 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FDPF20N50FT FDPF20N50FT.pdf
FDPF20N50FT
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDPF20N50FT ONSM-S-A0003584205-1.pdf?t.download=true&u=5oefqw
Hersteller: Fairchild
Transistor N-Channel MOSFET; 500V; 30V; 260mOhm; 20A; 38,5W; -55°C ~ 150°C; FDPF20N50FT TFDPF20n50ft
Anzahl je Verpackung: 5 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+6.31 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
FDPF20N50FT ONSM-S-A0003584205-1.pdf?t.download=true&u=5oefqw
FDPF20N50FT
Hersteller: onsemi
Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
auf Bestellung 653 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.22 EUR
50+3.71 EUR
100+3.37 EUR
500+2.77 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FDPF20N50T fdpf20n50t-d.pdf
FDPF20N50T
Hersteller: onsemi
Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.99 EUR
50+4.14 EUR
100+3.77 EUR
500+3.12 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
HGTG20N50C1D HRISD027-3-71.pdf?t.download=true&u=5oefqw
HGTG20N50C1D
Hersteller: Harris Corporation
Description: IGBT 500V 26A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
Supplier Device Package: TO-247
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector Pulsed (Icm): 35 A
Power - Max: 75 W
auf Bestellung 1732 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+12.91 EUR
Mindestbestellmenge: 40
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HGTH20N50C1 HRISD027-3-61.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: IGBT 500V 20A TO-218 ISOLATED
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
Supplier Device Package: TO-218 Isolated
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector Pulsed (Icm): 35 A
Power - Max: 100 W
auf Bestellung 4984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
45+11.47 EUR
Mindestbestellmenge: 45
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HGTH20N50E1 HRISD027-3-61.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: IGBT 500V 20A TO-218 ISOLATED
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
Supplier Device Package: TO-218 Isolated
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector Pulsed (Icm): 35 A
Power - Max: 100 W
auf Bestellung 287 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
89+5.73 EUR
Mindestbestellmenge: 89
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HGTH20N50E1D HRISD027-3-76.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: IGBT 500V 20A TO-218 ISOLATED
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
Supplier Device Package: TO-218 Isolated
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector Pulsed (Icm): 35 A
Power - Max: 100 W
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
90+5.73 EUR
Mindestbestellmenge: 90
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HGTH20N50EID
Hersteller: Harris Corporation
Description: 20A, 500V, N CHANNEL IGBT WITH A
Packaging: Bulk
Part Status: Active
auf Bestellung 1433 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
89+5.73 EUR
Mindestbestellmenge: 89
Im Einkaufswagen  Stück im Wert von  UAH
IGTH20N50 TOCSS00194-1.pdf?t.download=true&u=5oefqw
IGTH20N50
Hersteller: Harris Corporation
Description: IGBT 500V 20A TO-218 ISOLATED
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-218 Isolated
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
auf Bestellung 269 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
110+4.63 EUR
Mindestbestellmenge: 110
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IRFB20N50KPBF description IRFB20N50K.pdf
IRFB20N50KPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 514 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.73 EUR
23+3.13 EUR
34+2.16 EUR
35+2.04 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRFB20N50KPBF description IRFB20N50K.pdf
IRFB20N50KPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 514 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.73 EUR
23+3.13 EUR
34+2.16 EUR
35+2.04 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRFB20N50KPBF description irfb20n50k.pdf
Hersteller: Vishay
Транзистор польовий TO220AB N-Ch MOSFET; Uds = 500V; Ids =12A; 280W
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+13.82 EUR
10+12.29 EUR
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IXFA20N50P3 IXFA(H,P,Q)20N50P3.pdf
IXFA20N50P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.76 EUR
Mindestbestellmenge: 19
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IXFA20N50P3 IXFA(H,P,Q)20N50P3.pdf
IXFA20N50P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
19+3.76 EUR
50+3.22 EUR
Mindestbestellmenge: 19
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IXFH20N50P3 IXFA(H,P,Q)20N50P3.pdf
IXFH20N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.91 EUR
16+4.65 EUR
17+4.39 EUR
Mindestbestellmenge: 10
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IXFH20N50P3 IXFA(H,P,Q)20N50P3.pdf
IXFH20N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 143 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.91 EUR
16+4.65 EUR
17+4.39 EUR
2010+4.22 EUR
Mindestbestellmenge: 10
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IXFH20N50P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_20n50p3_datasheet.pdf.pdf
IXFH20N50P3
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 500V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 303 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.96 EUR
30+7.46 EUR
120+6.52 EUR
Mindestbestellmenge: 2
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IXFQ20N50P3 IXFA(H,P,Q)20N50P3.pdf
IXFQ20N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO3P
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.14 EUR
17+4.38 EUR
18+4.13 EUR
270+3.98 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ20N50P3 IXFA(H,P,Q)20N50P3.pdf
IXFQ20N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO3P
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 296 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+7.14 EUR
17+4.38 EUR
18+4.13 EUR
270+3.98 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ20N50P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_20n50p3_datasheet.pdf.pdf
IXFQ20N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 20A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 1170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.53 EUR
30+6.61 EUR
120+5.52 EUR
510+4.73 EUR
1020+4.69 EUR
Mindestbestellmenge: 2
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NB20N50104JBA nb21-nb12-nb20.pdf
NB20N50104JBA
Hersteller: KYOCERA AVX
Description: THERM NTC 100KOHM 4160K 1206
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
B25/85: 4160K
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 100k
Resistance Tolerance: ±5%
Part Status: Active
Power - Max: 240 mW
Grade: Automotive
Qualification: AEC-Q200
auf Bestellung 6724 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
27+0.67 EUR
28+0.63 EUR
30+0.59 EUR
50+0.56 EUR
100+0.53 EUR
500+0.48 EUR
1000+0.46 EUR
Mindestbestellmenge: 23
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NB20N50104JBA nb21-nb12-nb20.pdf
NB20N50104JBA
Hersteller: KYOCERA AVX
Description: THERM NTC 100KOHM 4160K 1206
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
B25/85: 4160K
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 100k
Resistance Tolerance: ±5%
Part Status: Active
Power - Max: 240 mW
Grade: Automotive
Qualification: AEC-Q200
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.43 EUR
Mindestbestellmenge: 3000
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NB20N50104KBA nb21-nb12-nb20.pdf
NB20N50104KBA
Hersteller: KYOCERA AVX
Description: THERM NTC 100KOHM 4160K 1206
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
B25/85: 4160K
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 100k
Resistance Tolerance: ±10%
Part Status: Active
Power - Max: 240 mW
Grade: Automotive
Qualification: AEC-Q200
auf Bestellung 2024 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
49+0.37 EUR
52+0.34 EUR
55+0.32 EUR
58+0.30 EUR
100+0.29 EUR
500+0.26 EUR
1000+0.24 EUR
Mindestbestellmenge: 42
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SIHA20N50E-GE3 siha20n50e.pdf
SIHA20N50E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 500V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 1046 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.12 EUR
10+4.01 EUR
100+2.81 EUR
500+2.29 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHA20N50E-GE3 siha20n50e.pdf
SIHA20N50E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 500V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.12 EUR
Mindestbestellmenge: 1000
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SIHB20N50E-GE3 sihb20n50e.pdf
SIHB20N50E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 19A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 2402 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.12 EUR
10+3.78 EUR
100+2.67 EUR
500+2.49 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SIHG20N50C-E3 SIHG20N50C-DTE.pdf
SIHG20N50C-E3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.23 EUR
28+2.57 EUR
29+2.52 EUR
30+2.43 EUR
31+2.35 EUR
Mindestbestellmenge: 23
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SIHG20N50C-E3 sihg20n5.pdf
Hersteller: Siliconix
Transistor: N-MOSFET unipolar 560V 11A 250W TO247AC VISHAY SIHG20N50C-E3 Transistor N-Channel THT SIHG20N50C-E3 TSIHG20n50c
Anzahl je Verpackung: 5 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+6.35 EUR
Mindestbestellmenge: 5
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SIHG20N50C-E3 SIHG20N50C-DTE.pdf
SIHG20N50C-E3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 289 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.23 EUR
28+2.57 EUR
29+2.52 EUR
30+2.43 EUR
31+2.35 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
SIHG20N50C-E3 sihg20n5.pdf
Hersteller: Vishay
Transistor: N-MOSFET unipolar 560V 11A 250W TO247AC VISHAY SIHG20N50C-E3 Transistor N-Channel THT SIHG20N50C-E3 TSIHG20n50c
Anzahl je Verpackung: 5 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+6.35 EUR
Mindestbestellmenge: 5
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SIHG20N50E-GE3 sihg20n50e.pdf
SIHG20N50E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 19A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 473 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.86 EUR
10+3.87 EUR
100+2.72 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SIHP20N50E-GE3 sihp20n50e.pdf
SIHP20N50E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 848 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.05 EUR
10+3.90 EUR
100+2.79 EUR
500+2.28 EUR
Mindestbestellmenge: 3
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TSA20N50M
Hersteller: Truesemi
MOSFET силовой транзистор, TO-3P or TO247; 20.0A, 500V, RDS(on) = 0.26Ohm@VGS = 10 V
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+7.87 EUR
10+7.22 EUR
100+6.53 EUR
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FDPF20N50 fdpf20n50-d.pdf
Hersteller: ON Semiconductor
auf Bestellung 9990 Stücke:
Lieferzeit 21-28 Tag (e)
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FDPF20N50T fdpf20n50t-d.pdf
Hersteller: ON Semiconductor
auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
MTH20N50
auf Bestellung 9597 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
MTM20N50
auf Bestellung 6878 Stücke:
Lieferzeit 21-28 Tag (e)
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MTV20N50E
Hersteller: MOTO
auf Bestellung 3 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
MTV20N50E/D
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
MTW20N50E
Hersteller: ON
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
MTY20N50E/D
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
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