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Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHG20N50C Produktcode: 44837
zu Favoriten hinzufügen
Lieblingsprodukt
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Vishay |
Transistoren > MOSFET N-CH Gehäuse: TO-247AC Uds,V: 500 Idd,A: 20 Rds(on), Ohm: 02.07.2015 Ciss, pF/Qg, nC: 2400 JHGF: THT |
auf Bestellung 19 Stück: Lieferzeit 21-28 Tag (e) |
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BD60120N50100AHF | TTM Technologies, Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 0404 (1010 Metric) Mounting Type: Surface Mount Frequency Range: 5.9GHz ~ 11.7GHz Impedance - Unbalanced/Balanced: 50 / 100Ohm Insertion Loss (Max): 0.8dB Return Loss (Min): 15dB Phase Difference: 7° Part Status: Active |
auf Bestellung 2605 Stücke: Lieferzeit 10-14 Tag (e) |
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C20N50Z4 | TTM Technologies, Inc. |
![]() Packaging: Cut Tape (CT) Power (Watts): 20W Package / Case: Nonstandard SMD Impedance: 50 Ohms Frequency Range: 0 Hz ~ 2.3 GHz |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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C20N50Z4 | TTM Technologies, Inc. |
![]() Packaging: Tape & Reel (TR) Power (Watts): 20W Package / Case: Nonstandard SMD Part Status: Active Impedance: 50 Ohms Frequency Range: 0 Hz ~ 2.3 GHz |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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CHV2220N500102FCT | Cal-Chip Electronics, Inc. |
![]() Tolerance: ±1% Features: High Voltage Packaging: Cut Tape (CT) Voltage - Rated: 500V Package / Case: 2220 (5750 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.071" (1.80mm) Capacitance: 1000 pF |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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CHV2220N500102JCT | Cal-Chip Electronics, Inc. |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5% Features: High Voltage Voltage - Rated: 500V Package / Case: 2220 (5750 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 1000 pF |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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CHV2220N500104KXT | Cal-Chip Electronics, Inc. |
![]() Tolerance: ±10% Features: High Voltage Packaging: Tape & Reel (TR) Voltage - Rated: 500V Package / Case: 2220 (5750 Metric) Temperature Coefficient: X7R Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.1 µF |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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CHV2220N500105KXT | Cal-Chip Electronics, Inc. |
![]() Packaging: Tape & Reel (TR) Tolerance: ±10% Features: High Voltage Voltage - Rated: 500V Package / Case: 2220 (5750 Metric) Temperature Coefficient: X7R Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.087" (2.20mm) Capacitance: 1 µF |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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CHV2220N500105KXT | Cal-Chip Electronics, Inc. |
![]() Packaging: Cut Tape (CT) Tolerance: ±10% Features: High Voltage Voltage - Rated: 500V Package / Case: 2220 (5750 Metric) Temperature Coefficient: X7R Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.087" (2.20mm) Capacitance: 1 µF |
auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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CHV2220N500393KXT | Cal-Chip Electronics, Inc. |
![]() Tolerance: ±10% Features: High Voltage Packaging: Tape & Reel (TR) Voltage - Rated: 500V Package / Case: 2220 (5750 Metric) Temperature Coefficient: X7R Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.039 µF |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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CHV2220N500474KXT | Cal-Chip Electronics, Inc. |
![]() Tolerance: ±10% Features: High Voltage Packaging: Tape & Reel (TR) Voltage - Rated: 500V Package / Case: 2220 (5750 Metric) Temperature Coefficient: X7R Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.47 µF |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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CHV2220N500684KXT | Cal-Chip Electronics, Inc. |
![]() Packaging: Cut Tape (CT) Tolerance: ±10% Features: High Voltage Voltage - Rated: 500V Package / Case: 2220 (5750 Metric) Temperature Coefficient: X7R Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.68 µF |
auf Bestellung 468 Stücke: Lieferzeit 10-14 Tag (e) |
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FDA20N50 | Fairchild Semiconductor |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 78050 Stücke: Lieferzeit 10-14 Tag (e) |
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FDA20N50-F109 | onsemi |
![]() Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V |
auf Bestellung 16600 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB20N50F | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V |
auf Bestellung 7290 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB20N50F | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V |
auf Bestellung 6400 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP20N50F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 250W; TO220-3 Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.9A Pulsed drain current: 80A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDP20N50F | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V |
auf Bestellung 1116 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPF20N50FT | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.9A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
FDPF20N50FT | Fairchild |
![]() Anzahl je Verpackung: 5 Stücke |
auf Bestellung 34 Stücke: Lieferzeit 7-14 Tag (e) |
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FDPF20N50FT | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V Power Dissipation (Max): 38.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V |
auf Bestellung 653 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPF20N50T | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V Power Dissipation (Max): 38.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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HGTG20N50C1D | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A Supplier Device Package: TO-247 Gate Charge: 33 nC Part Status: Active Current - Collector (Ic) (Max): 26 A Voltage - Collector Emitter Breakdown (Max): 500 V Current - Collector Pulsed (Icm): 35 A Power - Max: 75 W |
auf Bestellung 1732 Stücke: Lieferzeit 10-14 Tag (e) |
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HGTH20N50C1 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-218-3 Isolated Tab, TO-218AC Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A Supplier Device Package: TO-218 Isolated Gate Charge: 33 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 500 V Current - Collector Pulsed (Icm): 35 A Power - Max: 100 W |
auf Bestellung 4984 Stücke: Lieferzeit 10-14 Tag (e) |
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HGTH20N50E1 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-218-3 Isolated Tab, TO-218AC Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A Supplier Device Package: TO-218 Isolated Gate Charge: 33 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 500 V Current - Collector Pulsed (Icm): 35 A Power - Max: 100 W |
auf Bestellung 287 Stücke: Lieferzeit 10-14 Tag (e) |
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HGTH20N50E1D | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-218-3 Isolated Tab, TO-218AC Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A Supplier Device Package: TO-218 Isolated Gate Charge: 33 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 500 V Current - Collector Pulsed (Icm): 35 A Power - Max: 100 W |
auf Bestellung 90 Stücke: Lieferzeit 10-14 Tag (e) |
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HGTH20N50EID | Harris Corporation |
Description: 20A, 500V, N CHANNEL IGBT WITH A Packaging: Bulk Part Status: Active |
auf Bestellung 1433 Stücke: Lieferzeit 10-14 Tag (e) |
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IGTH20N50 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-218-3 Isolated Tab, TO-218AC Mounting Type: Through Hole Input Type: Standard Supplier Device Package: TO-218 Isolated Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 500 V |
auf Bestellung 269 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFB20N50KPBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 280W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 514 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB20N50KPBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 280W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 514 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB20N50KPBF | Vishay |
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auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA20N50P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 380W Case: TO263 On-state resistance: 0.3Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA20N50P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 380W Case: TO263 On-state resistance: 0.3Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH20N50P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 380W Case: TO247-3 On-state resistance: 0.3Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 143 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH20N50P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 380W Case: TO247-3 On-state resistance: 0.3Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 143 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH20N50P3 | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
auf Bestellung 303 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFQ20N50P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 380W Case: TO3P On-state resistance: 0.3Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 296 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFQ20N50P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 380W Case: TO3P On-state resistance: 0.3Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 296 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFQ20N50P3 | IXYS |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
auf Bestellung 1170 Stücke: Lieferzeit 10-14 Tag (e) |
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NB20N50104JBA | KYOCERA AVX |
![]() Packaging: Cut Tape (CT) Package / Case: 1206 (3216 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C B25/85: 4160K B Value Tolerance: ±3% Resistance in Ohms @ 25°C: 100k Resistance Tolerance: ±5% Part Status: Active Power - Max: 240 mW Grade: Automotive Qualification: AEC-Q200 |
auf Bestellung 6724 Stücke: Lieferzeit 10-14 Tag (e) |
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NB20N50104JBA | KYOCERA AVX |
![]() Packaging: Tape & Reel (TR) Package / Case: 1206 (3216 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C B25/85: 4160K B Value Tolerance: ±3% Resistance in Ohms @ 25°C: 100k Resistance Tolerance: ±5% Part Status: Active Power - Max: 240 mW Grade: Automotive Qualification: AEC-Q200 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NB20N50104KBA | KYOCERA AVX |
![]() Packaging: Cut Tape (CT) Package / Case: 1206 (3216 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C B25/85: 4160K B Value Tolerance: ±3% Resistance in Ohms @ 25°C: 100k Resistance Tolerance: ±10% Part Status: Active Power - Max: 240 mW Grade: Automotive Qualification: AEC-Q200 |
auf Bestellung 2024 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHA20N50E-GE3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V |
auf Bestellung 1046 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHA20N50E-GE3 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHB20N50E-GE3 | Vishay Siliconix |
![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V |
auf Bestellung 2402 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG20N50C-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 250W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 289 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHG20N50C-E3 | Siliconix |
![]() Anzahl je Verpackung: 5 Stücke |
auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHG20N50C-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 250W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 289 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHG20N50C-E3 | Vishay |
![]() Anzahl je Verpackung: 5 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHG20N50E-GE3 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V |
auf Bestellung 473 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP20N50E-GE3 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V |
auf Bestellung 848 Stücke: Lieferzeit 10-14 Tag (e) |
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TSA20N50M | Truesemi | MOSFET силовой транзистор, TO-3P or TO247; 20.0A, 500V, RDS(on) = 0.26Ohm@VGS = 10 V |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF20N50 | ON Semiconductor |
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auf Bestellung 9990 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FDPF20N50T | ON Semiconductor |
![]() |
auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MTH20N50 |
auf Bestellung 9597 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MTM20N50 |
auf Bestellung 6878 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MTV20N50E | MOTO |
auf Bestellung 3 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
MTV20N50E/D |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MTW20N50E | ON |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
MTY20N50E/D |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
SIHG20N50C Produktcode: 44837
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Lieblingsprodukt
|
Hersteller: Vishay
Transistoren > MOSFET N-CH
Gehäuse: TO-247AC
Uds,V: 500
Idd,A: 20
Rds(on), Ohm: 02.07.2015
Ciss, pF/Qg, nC: 2400
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-247AC
Uds,V: 500
Idd,A: 20
Rds(on), Ohm: 02.07.2015
Ciss, pF/Qg, nC: 2400
JHGF: THT
auf Bestellung 19 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis |
---|---|
1+ | 1.50 EUR |
BD60120N50100AHF |
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Hersteller: TTM Technologies, Inc.
Description: BALUN 5.9GHZ-11.7GHZ 50/100 0404
Packaging: Cut Tape (CT)
Package / Case: 0404 (1010 Metric)
Mounting Type: Surface Mount
Frequency Range: 5.9GHz ~ 11.7GHz
Impedance - Unbalanced/Balanced: 50 / 100Ohm
Insertion Loss (Max): 0.8dB
Return Loss (Min): 15dB
Phase Difference: 7°
Part Status: Active
Description: BALUN 5.9GHZ-11.7GHZ 50/100 0404
Packaging: Cut Tape (CT)
Package / Case: 0404 (1010 Metric)
Mounting Type: Surface Mount
Frequency Range: 5.9GHz ~ 11.7GHz
Impedance - Unbalanced/Balanced: 50 / 100Ohm
Insertion Loss (Max): 0.8dB
Return Loss (Min): 15dB
Phase Difference: 7°
Part Status: Active
auf Bestellung 2605 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.69 EUR |
10+ | 1.86 EUR |
25+ | 1.63 EUR |
50+ | 1.49 EUR |
100+ | 1.37 EUR |
250+ | 1.24 EUR |
500+ | 1.16 EUR |
1000+ | 1.09 EUR |
C20N50Z4 |
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Hersteller: TTM Technologies, Inc.
Description: RF ATTENUATOR 50OHM
Packaging: Cut Tape (CT)
Power (Watts): 20W
Package / Case: Nonstandard SMD
Impedance: 50 Ohms
Frequency Range: 0 Hz ~ 2.3 GHz
Description: RF ATTENUATOR 50OHM
Packaging: Cut Tape (CT)
Power (Watts): 20W
Package / Case: Nonstandard SMD
Impedance: 50 Ohms
Frequency Range: 0 Hz ~ 2.3 GHz
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.22 EUR |
10+ | 6.28 EUR |
25+ | 5.69 EUR |
100+ | 4.98 EUR |
250+ | 4.61 EUR |
500+ | 4.36 EUR |
C20N50Z4 |
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Hersteller: TTM Technologies, Inc.
Description: RF ATTENUATOR 50OHM
Packaging: Tape & Reel (TR)
Power (Watts): 20W
Package / Case: Nonstandard SMD
Part Status: Active
Impedance: 50 Ohms
Frequency Range: 0 Hz ~ 2.3 GHz
Description: RF ATTENUATOR 50OHM
Packaging: Tape & Reel (TR)
Power (Watts): 20W
Package / Case: Nonstandard SMD
Part Status: Active
Impedance: 50 Ohms
Frequency Range: 0 Hz ~ 2.3 GHz
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 3.54 EUR |
CHV2220N500102FCT |
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Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 COG 1000PF 1% 500V
Tolerance: ±1%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 1000 pF
Description: HVCAP2220 COG 1000PF 1% 500V
Tolerance: ±1%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 1000 pF
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.68 EUR |
10+ | 6.58 EUR |
50+ | 5.32 EUR |
100+ | 4.92 EUR |
500+ | 4.25 EUR |
CHV2220N500102JCT |
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Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 COG 1000PF 5% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 1000 pF
Description: HVCAP2220 COG 1000PF 5% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 1000 pF
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 3.08 EUR |
CHV2220N500104KXT |
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Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 X7R .1UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.1 µF
Description: HVCAP2220 X7R .1UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.1 µF
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
500+ | 1.76 EUR |
CHV2220N500105KXT |
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Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 X7R 1UF 10% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.087" (2.20mm)
Capacitance: 1 µF
Description: HVCAP2220 X7R 1UF 10% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.087" (2.20mm)
Capacitance: 1 µF
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
500+ | 1.97 EUR |
CHV2220N500105KXT |
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Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 X7R 1UF 10% 500V
Packaging: Cut Tape (CT)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.087" (2.20mm)
Capacitance: 1 µF
Description: HVCAP2220 X7R 1UF 10% 500V
Packaging: Cut Tape (CT)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.087" (2.20mm)
Capacitance: 1 µF
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.61 EUR |
10+ | 3.00 EUR |
CHV2220N500393KXT |
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Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 X7R .039UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.039 µF
Description: HVCAP2220 X7R .039UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.039 µF
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 1.89 EUR |
CHV2220N500474KXT |
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Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 X7R .47UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.47 µF
Description: HVCAP2220 X7R .47UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.47 µF
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.97 EUR |
2000+ | 0.91 EUR |
CHV2220N500684KXT |
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Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP2220 X7R .68UF 10% 500V
Packaging: Cut Tape (CT)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.68 µF
Description: HVCAP2220 X7R .68UF 10% 500V
Packaging: Cut Tape (CT)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 2220 (5750 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.224" L x 0.197" W (5.70mm x 5.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.68 µF
auf Bestellung 468 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.80 EUR |
10+ | 3.13 EUR |
50+ | 2.46 EUR |
100+ | 2.25 EUR |
FDA20N50 |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 22A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 500V 22A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 78050 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
94+ | 5.37 EUR |
FDA20N50-F109 |
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Hersteller: onsemi
Description: MOSFET N-CH 500V 22A TO3PN
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Description: MOSFET N-CH 500V 22A TO3PN
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
auf Bestellung 16600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
142+ | 3.57 EUR |
FDB20N50F |
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Hersteller: onsemi
Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
auf Bestellung 7290 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 6.90 EUR |
10+ | 4.67 EUR |
100+ | 3.35 EUR |
FDB20N50F |
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Hersteller: onsemi
Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
800+ | 2.92 EUR |
FDP20N50F |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDP20N50F |
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Hersteller: onsemi
Description: MOSFET N-CH 500V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
auf Bestellung 1116 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 6.69 EUR |
50+ | 3.41 EUR |
100+ | 3.10 EUR |
500+ | 2.54 EUR |
1000+ | 2.36 EUR |
FDPF20N50FT |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDPF20N50FT |
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Hersteller: Fairchild
Transistor N-Channel MOSFET; 500V; 30V; 260mOhm; 20A; 38,5W; -55°C ~ 150°C; FDPF20N50FT TFDPF20n50ft
Anzahl je Verpackung: 5 Stücke
Transistor N-Channel MOSFET; 500V; 30V; 260mOhm; 20A; 38,5W; -55°C ~ 150°C; FDPF20N50FT TFDPF20n50ft
Anzahl je Verpackung: 5 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 6.31 EUR |
FDPF20N50FT |
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Hersteller: onsemi
Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
auf Bestellung 653 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.22 EUR |
50+ | 3.71 EUR |
100+ | 3.37 EUR |
500+ | 2.77 EUR |
FDPF20N50T |
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Hersteller: onsemi
Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.99 EUR |
50+ | 4.14 EUR |
100+ | 3.77 EUR |
500+ | 3.12 EUR |
HGTG20N50C1D |
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Hersteller: Harris Corporation
Description: IGBT 500V 26A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
Supplier Device Package: TO-247
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector Pulsed (Icm): 35 A
Power - Max: 75 W
Description: IGBT 500V 26A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
Supplier Device Package: TO-247
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector Pulsed (Icm): 35 A
Power - Max: 75 W
auf Bestellung 1732 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
40+ | 12.91 EUR |
HGTH20N50C1 |
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Hersteller: Harris Corporation
Description: IGBT 500V 20A TO-218 ISOLATED
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
Supplier Device Package: TO-218 Isolated
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector Pulsed (Icm): 35 A
Power - Max: 100 W
Description: IGBT 500V 20A TO-218 ISOLATED
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
Supplier Device Package: TO-218 Isolated
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector Pulsed (Icm): 35 A
Power - Max: 100 W
auf Bestellung 4984 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
45+ | 11.47 EUR |
HGTH20N50E1 |
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Hersteller: Harris Corporation
Description: IGBT 500V 20A TO-218 ISOLATED
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
Supplier Device Package: TO-218 Isolated
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector Pulsed (Icm): 35 A
Power - Max: 100 W
Description: IGBT 500V 20A TO-218 ISOLATED
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
Supplier Device Package: TO-218 Isolated
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector Pulsed (Icm): 35 A
Power - Max: 100 W
auf Bestellung 287 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
89+ | 5.73 EUR |
HGTH20N50E1D |
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Hersteller: Harris Corporation
Description: IGBT 500V 20A TO-218 ISOLATED
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
Supplier Device Package: TO-218 Isolated
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector Pulsed (Icm): 35 A
Power - Max: 100 W
Description: IGBT 500V 20A TO-218 ISOLATED
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
Supplier Device Package: TO-218 Isolated
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector Pulsed (Icm): 35 A
Power - Max: 100 W
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
90+ | 5.73 EUR |
HGTH20N50EID |
Hersteller: Harris Corporation
Description: 20A, 500V, N CHANNEL IGBT WITH A
Packaging: Bulk
Part Status: Active
Description: 20A, 500V, N CHANNEL IGBT WITH A
Packaging: Bulk
Part Status: Active
auf Bestellung 1433 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
89+ | 5.73 EUR |
IGTH20N50 |
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Hersteller: Harris Corporation
Description: IGBT 500V 20A TO-218 ISOLATED
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-218 Isolated
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Description: IGBT 500V 20A TO-218 ISOLATED
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-218 Isolated
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
auf Bestellung 269 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
110+ | 4.63 EUR |
IRFB20N50KPBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 514 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.73 EUR |
23+ | 3.13 EUR |
34+ | 2.16 EUR |
35+ | 2.04 EUR |
IRFB20N50KPBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 514 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.73 EUR |
23+ | 3.13 EUR |
34+ | 2.16 EUR |
35+ | 2.04 EUR |
IRFB20N50KPBF | ![]() |
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Hersteller: Vishay
Транзистор польовий TO220AB N-Ch MOSFET; Uds = 500V; Ids =12A; 280W
Транзистор польовий TO220AB N-Ch MOSFET; Uds = 500V; Ids =12A; 280W
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 13.82 EUR |
10+ | 12.29 EUR |
IXFA20N50P3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.76 EUR |
IXFA20N50P3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.76 EUR |
50+ | 3.22 EUR |
IXFH20N50P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.91 EUR |
16+ | 4.65 EUR |
17+ | 4.39 EUR |
IXFH20N50P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 143 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.91 EUR |
16+ | 4.65 EUR |
17+ | 4.39 EUR |
2010+ | 4.22 EUR |
IXFH20N50P3 |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 500V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 303 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 10.96 EUR |
30+ | 7.46 EUR |
120+ | 6.52 EUR |
IXFQ20N50P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO3P
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO3P
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 7.14 EUR |
17+ | 4.38 EUR |
18+ | 4.13 EUR |
270+ | 3.98 EUR |
IXFQ20N50P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO3P
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO3P
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 296 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 7.14 EUR |
17+ | 4.38 EUR |
18+ | 4.13 EUR |
270+ | 3.98 EUR |
IXFQ20N50P3 |
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Hersteller: IXYS
Description: MOSFET N-CH 500V 20A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 1170 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 11.53 EUR |
30+ | 6.61 EUR |
120+ | 5.52 EUR |
510+ | 4.73 EUR |
1020+ | 4.69 EUR |
NB20N50104JBA |
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Hersteller: KYOCERA AVX
Description: THERM NTC 100KOHM 4160K 1206
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
B25/85: 4160K
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 100k
Resistance Tolerance: ±5%
Part Status: Active
Power - Max: 240 mW
Grade: Automotive
Qualification: AEC-Q200
Description: THERM NTC 100KOHM 4160K 1206
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
B25/85: 4160K
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 100k
Resistance Tolerance: ±5%
Part Status: Active
Power - Max: 240 mW
Grade: Automotive
Qualification: AEC-Q200
auf Bestellung 6724 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 0.77 EUR |
27+ | 0.67 EUR |
28+ | 0.63 EUR |
30+ | 0.59 EUR |
50+ | 0.56 EUR |
100+ | 0.53 EUR |
500+ | 0.48 EUR |
1000+ | 0.46 EUR |
NB20N50104JBA |
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Hersteller: KYOCERA AVX
Description: THERM NTC 100KOHM 4160K 1206
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
B25/85: 4160K
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 100k
Resistance Tolerance: ±5%
Part Status: Active
Power - Max: 240 mW
Grade: Automotive
Qualification: AEC-Q200
Description: THERM NTC 100KOHM 4160K 1206
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
B25/85: 4160K
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 100k
Resistance Tolerance: ±5%
Part Status: Active
Power - Max: 240 mW
Grade: Automotive
Qualification: AEC-Q200
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.43 EUR |
NB20N50104KBA |
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Hersteller: KYOCERA AVX
Description: THERM NTC 100KOHM 4160K 1206
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
B25/85: 4160K
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 100k
Resistance Tolerance: ±10%
Part Status: Active
Power - Max: 240 mW
Grade: Automotive
Qualification: AEC-Q200
Description: THERM NTC 100KOHM 4160K 1206
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
B25/85: 4160K
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 100k
Resistance Tolerance: ±10%
Part Status: Active
Power - Max: 240 mW
Grade: Automotive
Qualification: AEC-Q200
auf Bestellung 2024 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
42+ | 0.42 EUR |
49+ | 0.37 EUR |
52+ | 0.34 EUR |
55+ | 0.32 EUR |
58+ | 0.30 EUR |
100+ | 0.29 EUR |
500+ | 0.26 EUR |
1000+ | 0.24 EUR |
SIHA20N50E-GE3 |
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Hersteller: Vishay Siliconix
Description: N-CHANNEL 500V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Description: N-CHANNEL 500V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 1046 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 6.12 EUR |
10+ | 4.01 EUR |
100+ | 2.81 EUR |
500+ | 2.29 EUR |
SIHA20N50E-GE3 |
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Hersteller: Vishay Siliconix
Description: N-CHANNEL 500V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Description: N-CHANNEL 500V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 2.12 EUR |
SIHB20N50E-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 19A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Description: MOSFET N-CH 500V 19A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 2402 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.12 EUR |
10+ | 3.78 EUR |
100+ | 2.67 EUR |
500+ | 2.49 EUR |
SIHG20N50C-E3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.23 EUR |
28+ | 2.57 EUR |
29+ | 2.52 EUR |
30+ | 2.43 EUR |
31+ | 2.35 EUR |
SIHG20N50C-E3 |
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Hersteller: Siliconix
Transistor: N-MOSFET unipolar 560V 11A 250W TO247AC VISHAY SIHG20N50C-E3 Transistor N-Channel THT SIHG20N50C-E3 TSIHG20n50c
Anzahl je Verpackung: 5 Stücke
Transistor: N-MOSFET unipolar 560V 11A 250W TO247AC VISHAY SIHG20N50C-E3 Transistor N-Channel THT SIHG20N50C-E3 TSIHG20n50c
Anzahl je Verpackung: 5 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 6.35 EUR |
SIHG20N50C-E3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 289 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.23 EUR |
28+ | 2.57 EUR |
29+ | 2.52 EUR |
30+ | 2.43 EUR |
31+ | 2.35 EUR |
SIHG20N50C-E3 |
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Hersteller: Vishay
Transistor: N-MOSFET unipolar 560V 11A 250W TO247AC VISHAY SIHG20N50C-E3 Transistor N-Channel THT SIHG20N50C-E3 TSIHG20n50c
Anzahl je Verpackung: 5 Stücke
Transistor: N-MOSFET unipolar 560V 11A 250W TO247AC VISHAY SIHG20N50C-E3 Transistor N-Channel THT SIHG20N50C-E3 TSIHG20n50c
Anzahl je Verpackung: 5 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 6.35 EUR |
SIHG20N50E-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 19A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Description: MOSFET N-CH 500V 19A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 473 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.86 EUR |
10+ | 3.87 EUR |
100+ | 2.72 EUR |
SIHP20N50E-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Description: MOSFET N-CH 500V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 848 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 6.05 EUR |
10+ | 3.90 EUR |
100+ | 2.79 EUR |
500+ | 2.28 EUR |
TSA20N50M |
Hersteller: Truesemi
MOSFET силовой транзистор, TO-3P or TO247; 20.0A, 500V, RDS(on) = 0.26Ohm@VGS = 10 V
MOSFET силовой транзистор, TO-3P or TO247; 20.0A, 500V, RDS(on) = 0.26Ohm@VGS = 10 V
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 7.87 EUR |
10+ | 7.22 EUR |
100+ | 6.53 EUR |
FDPF20N50 |
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Hersteller: ON Semiconductor
auf Bestellung 9990 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FDPF20N50T |
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Hersteller: ON Semiconductor
auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
MTV20N50E |
Hersteller: MOTO
auf Bestellung 3 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
MTV20N50E/D |
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
MTW20N50E |
Hersteller: ON
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
MTY20N50E/D |
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
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