Suchergebnisse für "60n100" : 37
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Mindestbestellmenge: 3
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Mindestbestellmenge: 2
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Mindestbestellmenge: 800
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Mindestbestellmenge: 2000
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Mindestbestellmenge: 2
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Stück im Wert von UAH
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Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
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Foto | Bezeichnung | Hersteller | Beschreibung |
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DAMI160N100 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 120A; SOT227B; screw; Idm: 640A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 120A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 4mΩ Pulsed drain current: 640A Power dissipation: 380W Gate-source voltage: -20...20V Mechanical mounting: screw |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB0260N1007L | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V |
auf Bestellung 1894 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB0260N1007L | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0260N100 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Power Dissipation (Max): 3.5W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9265 pF @ 50 V |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0260N100 | onsemi / Fairchild |
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auf Bestellung 1082 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0260N100 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Power Dissipation (Max): 3.5W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9265 pF @ 50 V |
auf Bestellung 17815 Stücke: Lieferzeit 10-14 Tag (e) |
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RE60N1000C02 | Vishay / Dale |
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auf Bestellung 51 Stücke: Lieferzeit 10-14 Tag (e) |
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RE60N1001C02 | Vishay / Dale | Wirewound Resistors - Chassis Mount 5watts 1Kohms 1% Non Inductive |
auf Bestellung 102 Stücke: Lieferzeit 10-14 Tag (e) |
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DDB6U160N100K | EUPEC | O348 J4-1 |
auf Bestellung 19 Stücke: Lieferzeit 21-28 Tag (e) |
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DDB6U60N100 | EUPEC |
auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |
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FGL60N100BNTD; NPT Trench IGBT+диод; 60A 1000V 180W; Корпус: TO-264-3L; ON Semi. |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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FGL60N100D | fsc | 8 |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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G60N100BNTD | FAIRCHIL | 09+ QFP |
auf Bestellung 900 Stücke: Lieferzeit 21-28 Tag (e) |
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TT60N1000KOF | AEG | 05+ |
auf Bestellung 470 Stücke: Lieferzeit 21-28 Tag (e) |
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FGL60N100BNTD Produktcode: 54348
zu Favoriten hinzufügen
Lieblingsprodukt
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FAIR |
![]() Gehäuse: TO-264 Vces: 1000 Vce: 2,5 Ic 25: 60 Ic 100: 42 Pd 25: 180 td(on)/td(off) 100-150 Grad: 140/630 |
Produkt ist nicht verfügbar
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G60N100BNTD Produktcode: 101158
zu Favoriten hinzufügen
Lieblingsprodukt
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Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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10018960-N1000AULF | Amphenol ICC (FCI) |
![]() Packaging: Bulk Connector Type: Plug to Plug Gender: Male to Male Color: Black Length: 32.81' (10.00m) Shielding: Shielded Number of Positions: 16 Cable Type: Round Usage: External Fastening Type: Thumbscrews Cable Connectors: Infiniband 4x Part Status: Active |
Produkt ist nicht verfügbar |
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DAMH560N100 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 460A; HB9434; screw; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 460A Case: HB9434 Electrical mounting: screw Polarisation: unipolar Mechanical mounting: screw Topology: MOSFET half-bridge |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DAMH560N100 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 460A; HB9434; screw; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 460A Case: HB9434 Electrical mounting: screw Polarisation: unipolar Mechanical mounting: screw Topology: MOSFET half-bridge Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DAMI160N100 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 120A; SOT227B; screw; Idm: 640A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 120A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 4mΩ Pulsed drain current: 640A Power dissipation: 380W Gate-source voltage: -20...20V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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DAMI560N100 | DACO Semiconductor |
![]() Description: Module; single transistor; 100V; 445A; SOT227B; screw; Idm: 1.6kA Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 445A Case: SOT227B Electrical mounting: screw Polarisation: unipolar Mechanical mounting: screw Power dissipation: 890W On-state resistance: 1.1mΩ Gate-source voltage: -20...20V Pulsed drain current: 1.6kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DAMI560N100 | DACO Semiconductor |
![]() Description: Module; single transistor; 100V; 445A; SOT227B; screw; Idm: 1.6kA Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 445A Case: SOT227B Electrical mounting: screw Polarisation: unipolar Mechanical mounting: screw Power dissipation: 890W On-state resistance: 1.1mΩ Gate-source voltage: -20...20V Pulsed drain current: 1.6kA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DAMIA960N100 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 720A; SOT227H; screw; screw Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 720A Case: SOT227H Electrical mounting: screw Polarisation: unipolar Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
DAMIA960N100 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 720A; SOT227H; screw; screw Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 720A Case: SOT227H Electrical mounting: screw Polarisation: unipolar Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDB0260N1007L | onsemi / Fairchild |
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Produkt ist nicht verfügbar |
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FGL60N100BNTD | onsemi |
![]() Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.2 µs Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-264-3 IGBT Type: NPT and Trench Td (on/off) @ 25°C: 140ns/630ns Test Condition: 600V, 60A, 51Ohm, 15V Gate Charge: 275 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 120 A Power - Max: 180 W |
Produkt ist nicht verfügbar |
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FGL60N100BNTDTU | onsemi |
![]() Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.2 µs Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-264-3 IGBT Type: NPT and Trench Td (on/off) @ 25°C: 140ns/630ns Test Condition: 600V, 60A, 51Ohm, 15V Gate Charge: 275 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 120 A Power - Max: 180 W |
Produkt ist nicht verfügbar |
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FGL60N100DTU | onsemi |
![]() Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.5 µs Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-264-3 IGBT Type: Trench Gate Charge: 230 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 120 A Power - Max: 176 W |
Produkt ist nicht verfügbar |
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GKS-113 287 260 N 1002 | INGUN | GKS-113-0929 Contact Probes |
Produkt ist nicht verfügbar |
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GKS-113 287 260 N 1002 M | INGUN | GKS-113-0525 Contact Probes |
Produkt ist nicht verfügbar |
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RE60N1000C02 | Vishay Dale |
![]() Power (Watts): 5W Tolerance: ±1% Lead Style: Solder Lugs Features: Non-Inductive Packaging: Bulk Package / Case: Axial, Box Temperature Coefficient: ±20ppm/°C Size / Dimension: 0.600" L x 0.646" W (15.24mm x 16.41mm) Composition: Wirewound Operating Temperature: -55°C ~ 250°C Mounting Feature: Flanges Coating, Housing Type: Aluminum Height - Seated (Max): 0.335" (8.51mm) Grade: Military Resistance: 100 Ohms Qualification: MIL-PRF-18546 |
Produkt ist nicht verfügbar |
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FDB0260N1007L | ONSEMI |
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Produkt ist nicht verfügbar |
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FDBL0260N100 | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
DAMI160N100 |
Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 120A; SOT227B; screw; Idm: 640A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 120A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4mΩ
Pulsed drain current: 640A
Power dissipation: 380W
Gate-source voltage: -20...20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 120A; SOT227B; screw; Idm: 640A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 120A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4mΩ
Pulsed drain current: 640A
Power dissipation: 380W
Gate-source voltage: -20...20V
Mechanical mounting: screw
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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3+ | 29.67 EUR |
10+ | 29.23 EUR |
FDB0260N1007L |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V
auf Bestellung 1894 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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2+ | 17.55 EUR |
10+ | 12.12 EUR |
100+ | 9.06 EUR |
FDB0260N1007L |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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800+ | 8.50 EUR |
FDBL0260N100 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 200A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9265 pF @ 50 V
Description: MOSFET N-CH 100V 200A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9265 pF @ 50 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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2000+ | 4.66 EUR |
FDBL0260N100 |
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Hersteller: onsemi / Fairchild
MOSFETs N-Channel Power Trench MOSFET
MOSFETs N-Channel Power Trench MOSFET
auf Bestellung 1082 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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1+ | 9.50 EUR |
10+ | 6.64 EUR |
100+ | 4.98 EUR |
500+ | 4.80 EUR |
FDBL0260N100 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 200A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9265 pF @ 50 V
Description: MOSFET N-CH 100V 200A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9265 pF @ 50 V
auf Bestellung 17815 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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2+ | 11.12 EUR |
10+ | 7.50 EUR |
100+ | 5.45 EUR |
500+ | 4.66 EUR |
RE60N1000C02 |
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Hersteller: Vishay / Dale
Wirewound Resistors - Chassis Mount 5watts 100ohms 1% Non Inductive
Wirewound Resistors - Chassis Mount 5watts 100ohms 1% Non Inductive
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 17.18 EUR |
10+ | 14.57 EUR |
20+ | 14.40 EUR |
50+ | 12.67 EUR |
100+ | 9.80 EUR |
200+ | 9.01 EUR |
500+ | 8.84 EUR |
RE60N1001C02 |
Hersteller: Vishay / Dale
Wirewound Resistors - Chassis Mount 5watts 1Kohms 1% Non Inductive
Wirewound Resistors - Chassis Mount 5watts 1Kohms 1% Non Inductive
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 17.18 EUR |
10+ | 14.57 EUR |
20+ | 14.40 EUR |
50+ | 12.67 EUR |
100+ | 10.96 EUR |
200+ | 9.93 EUR |
500+ | 9.24 EUR |
DDB6U160N100K |
Hersteller: EUPEC
O348 J4-1
O348 J4-1
auf Bestellung 19 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
DDB6U60N100 |
Hersteller: EUPEC
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FGL60N100BNTD; NPT Trench IGBT+диод; 60A 1000V 180W; Корпус: TO-264-3L; ON Semi. |
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FGL60N100D |
Hersteller: fsc
8
8
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
G60N100BNTD |
Hersteller: FAIRCHIL
09+ QFP
09+ QFP
auf Bestellung 900 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
TT60N1000KOF |
Hersteller: AEG
05+
05+
auf Bestellung 470 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FGL60N100BNTD Produktcode: 54348
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Lieblingsprodukt
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Hersteller: FAIR
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-264
Vces: 1000
Vce: 2,5
Ic 25: 60
Ic 100: 42
Pd 25: 180
td(on)/td(off) 100-150 Grad: 140/630
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-264
Vces: 1000
Vce: 2,5
Ic 25: 60
Ic 100: 42
Pd 25: 180
td(on)/td(off) 100-150 Grad: 140/630
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G60N100BNTD Produktcode: 101158
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Lieblingsprodukt
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Produkt ist nicht verfügbar
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10018960-N1000AULF |
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Hersteller: Amphenol ICC (FCI)
Description: CABLE ASSY EYEMAX
Packaging: Bulk
Connector Type: Plug to Plug
Gender: Male to Male
Color: Black
Length: 32.81' (10.00m)
Shielding: Shielded
Number of Positions: 16
Cable Type: Round
Usage: External
Fastening Type: Thumbscrews
Cable Connectors: Infiniband 4x
Part Status: Active
Description: CABLE ASSY EYEMAX
Packaging: Bulk
Connector Type: Plug to Plug
Gender: Male to Male
Color: Black
Length: 32.81' (10.00m)
Shielding: Shielded
Number of Positions: 16
Cable Type: Round
Usage: External
Fastening Type: Thumbscrews
Cable Connectors: Infiniband 4x
Part Status: Active
Produkt ist nicht verfügbar
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DAMH560N100 |
Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 460A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 460A
Case: HB9434
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
Topology: MOSFET half-bridge
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 460A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 460A
Case: HB9434
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
Topology: MOSFET half-bridge
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DAMH560N100 |
Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 460A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 460A
Case: HB9434
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
Topology: MOSFET half-bridge
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 460A; HB9434; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 460A
Case: HB9434
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
Topology: MOSFET half-bridge
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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DAMI160N100 |
Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 120A; SOT227B; screw; Idm: 640A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 120A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4mΩ
Pulsed drain current: 640A
Power dissipation: 380W
Gate-source voltage: -20...20V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 120A; SOT227B; screw; Idm: 640A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 120A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4mΩ
Pulsed drain current: 640A
Power dissipation: 380W
Gate-source voltage: -20...20V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 29.67 EUR |
10+ | 29.23 EUR |
DAMI560N100 |
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Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 445A; SOT227B; screw; Idm: 1.6kA
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 445A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
Power dissipation: 890W
On-state resistance: 1.1mΩ
Gate-source voltage: -20...20V
Pulsed drain current: 1.6kA
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 445A; SOT227B; screw; Idm: 1.6kA
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 445A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
Power dissipation: 890W
On-state resistance: 1.1mΩ
Gate-source voltage: -20...20V
Pulsed drain current: 1.6kA
Produkt ist nicht verfügbar
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DAMI560N100 |
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Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 445A; SOT227B; screw; Idm: 1.6kA
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 445A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
Power dissipation: 890W
On-state resistance: 1.1mΩ
Gate-source voltage: -20...20V
Pulsed drain current: 1.6kA
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 445A; SOT227B; screw; Idm: 1.6kA
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 445A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
Power dissipation: 890W
On-state resistance: 1.1mΩ
Gate-source voltage: -20...20V
Pulsed drain current: 1.6kA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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DAMIA960N100 |
Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 720A; SOT227H; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 720A
Case: SOT227H
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 720A; SOT227H; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 720A
Case: SOT227H
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DAMIA960N100 |
Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 720A; SOT227H; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 720A
Case: SOT227H
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 720A; SOT227H; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 720A
Case: SOT227H
Electrical mounting: screw
Polarisation: unipolar
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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FDB0260N1007L |
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Hersteller: onsemi / Fairchild
MOSFETs 100V TO263 7L JEDEC GREEN EMC
MOSFETs 100V TO263 7L JEDEC GREEN EMC
Produkt ist nicht verfügbar
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FGL60N100BNTD |
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Hersteller: onsemi
Description: IGBT NPT/TRENCH 1000V 60A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.2 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 140ns/630ns
Test Condition: 600V, 60A, 51Ohm, 15V
Gate Charge: 275 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
Description: IGBT NPT/TRENCH 1000V 60A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.2 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 140ns/630ns
Test Condition: 600V, 60A, 51Ohm, 15V
Gate Charge: 275 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
Produkt ist nicht verfügbar
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FGL60N100BNTDTU |
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Hersteller: onsemi
Description: IGBT NPT/TRENCH 1000V 60A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.2 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 140ns/630ns
Test Condition: 600V, 60A, 51Ohm, 15V
Gate Charge: 275 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
Description: IGBT NPT/TRENCH 1000V 60A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.2 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 140ns/630ns
Test Condition: 600V, 60A, 51Ohm, 15V
Gate Charge: 275 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
Produkt ist nicht verfügbar
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FGL60N100DTU |
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Hersteller: onsemi
Description: IGBT TRENCH 1000V 60A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: Trench
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 176 W
Description: IGBT TRENCH 1000V 60A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: Trench
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 176 W
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GKS-113 287 260 N 1002 |
Hersteller: INGUN
GKS-113-0929 Contact Probes
GKS-113-0929 Contact Probes
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GKS-113 287 260 N 1002 M |
Hersteller: INGUN
GKS-113-0525 Contact Probes
GKS-113-0525 Contact Probes
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RE60N1000C02 |
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Hersteller: Vishay Dale
Description: CAP
Power (Watts): 5W
Tolerance: ±1%
Lead Style: Solder Lugs
Features: Non-Inductive
Packaging: Bulk
Package / Case: Axial, Box
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.600" L x 0.646" W (15.24mm x 16.41mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum
Height - Seated (Max): 0.335" (8.51mm)
Grade: Military
Resistance: 100 Ohms
Qualification: MIL-PRF-18546
Description: CAP
Power (Watts): 5W
Tolerance: ±1%
Lead Style: Solder Lugs
Features: Non-Inductive
Packaging: Bulk
Package / Case: Axial, Box
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.600" L x 0.646" W (15.24mm x 16.41mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum
Height - Seated (Max): 0.335" (8.51mm)
Grade: Military
Resistance: 100 Ohms
Qualification: MIL-PRF-18546
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FDB0260N1007L |
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Hersteller: ONSEMI
FDB0260N1007L SMD N channel transistors
FDB0260N1007L SMD N channel transistors
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FDBL0260N100 |
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Hersteller: ONSEMI
FDBL0260N100 SMD N channel transistors
FDBL0260N100 SMD N channel transistors
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