Hersteller: DACO Semiconductor
Category: Transistor modules
Description: Module; single transistor; 100V; 120A; SOT227B; screw; Idm: 640A
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 4mΩ
Pulsed drain current: 640A
Type of semiconductor module: MOSFET transistor
Power dissipation: 380W
Polarisation: unipolar
Drain current: 120A
Drain-source voltage: 100V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: -20...20V

Hersteller: ETEK MICROELECTRONICS
Description: 60V N-Channel Trench Power MOSFE
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A
Supplier Device Package: 8-SOP
Vgs (Max): ±20V

Hersteller: onsemi
MOSFETs 100V TO263 7L JEDEC GREEN EMC

Hersteller: onsemi
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V

Hersteller: onsemi
Description: MOSFET N-CH 100V 200A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9265 pF @ 50 V

Hersteller: onsemi
MOSFETs N-Channel Power Trench MOSFET

Hersteller: onsemi
Description: MOSFET N-CH 100V 200A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9265 pF @ 50 V

Hersteller: Vishay / Dale
Wirewound Resistors - Chassis Mount 5watts 100ohms 1% Non Inductive

Hersteller: Vishay Dale
Description: CAP
Packaging: Bulk
Power (Watts): 5W
Tolerance: ±1%
Lead Style: Solder Lugs
Features: Non-Inductive
Package / Case: Axial, Box
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.600" L x 0.646" W (15.24mm x 16.41mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum
Height - Seated (Max): 0.335" (8.51mm)
Grade: Military
Resistance: 100 Ohms
Qualification: MIL-PRF-18546

Hersteller: Vishay / Dale
Wirewound Resistors - Chassis Mount 5watts 1Kohms 1% Non Inductive

Hersteller: Vishay Dale
Description: NH-5 1K 1% RE60N1001 C02
Power (Watts): 5W
Tolerance: ±1%
Lead Style: Solder Lugs
Features: Non-Inductive
Packaging: Bulk
Package / Case: Axial, Box
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.600" L x 0.646" W (15.24mm x 16.41mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Mounting Feature: Flanges
Coating, Housing Type: Aluminum
Height - Seated (Max): 0.335" (8.51mm)
Grade: Military
Resistance: 1 kOhms
Qualification: MIL-PRF-18546

Hersteller: EUPEC
O348 J4-1

Hersteller: EUPEC

Hersteller: fsc
8

Hersteller: FAIRCHIL
09+ QFP

Hersteller: AEG
05+

Hersteller: Fairchild
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-264
Kollektor-Emitter-Spannung Vces, V: 1000 V
Sättigungsspannung Vce, V: 2,5 V
Kollektorstrom Ic bei 25°C, A: 60 A
Kollektorstrom Ic bei 100°C, A: 42 A
Verlustleistung Pd bei 25°C, W: 180 W
Ein-/Ausschaltzeit td(on)/td(off) bei 100-150°C, ns: 140/630

Transistoren > Transistoren IGBT, Leistungsmodule

Hersteller: DACO Semiconductor
Category: Transistor modules
Description: Module; transistor/transistor; 100V; 460A; HB9434; screw; screw
Semiconductor structure: transistor/transistor
Case: HB9434
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Polarisation: unipolar
Drain current: 460A
Drain-source voltage: 100V
Mechanical mounting: screw
Electrical mounting: screw

Hersteller: DACO Semiconductor
Category: Transistor modules
Description: Module; single transistor; 100V; 445A; SOT227B; screw; Idm: 1.6kA
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 1.1mΩ
Pulsed drain current: 1.6kA
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
Polarisation: unipolar
Drain current: 445A
Drain-source voltage: 100V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: -20...20V

Hersteller: DACO Semiconductor
Category: Transistor modules
Description: Module; single transistor; 100V; 720A; SOT227H; screw; screw
Semiconductor structure: single transistor
Case: SOT227H
Type of semiconductor module: MOSFET transistor
Polarisation: unipolar
Drain current: 720A
Drain-source voltage: 100V
Mechanical mounting: screw
Electrical mounting: screw

Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1100A; 250W
Mounting: SMD
Case: D2PAK-7
On-state resistance: 2.6mΩ
Pulsed drain current: 1100A
Power dissipation: 250W
Gate charge: 84nC
Polarisation: unipolar
Drain current: 200A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape

Hersteller: onsemi
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V

Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1000A; 250W
Mounting: SMD
Case: H-PSOF8L
On-state resistance: 2.6mΩ
Pulsed drain current: 1kA
Power dissipation: 250W
Gate charge: 83nC
Polarisation: unipolar
Drain current: 200A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V

Hersteller: onsemi
Description: IGBT NPT/TRENCH 1000V 60A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.2 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 140ns/630ns
Test Condition: 600V, 60A, 51Ohm, 15V
Gate Charge: 275 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W

Hersteller: onsemi
Description: IGBT NPT/TRENCH 1000V 60A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.2 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 140ns/630ns
Test Condition: 600V, 60A, 51Ohm, 15V
Gate Charge: 275 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W

Hersteller: onsemi
Description: IGBT TRENCH 1000V 60A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: Trench
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 176 W

Hersteller: TE Connectivity / Schaffner
Power Line Filters 3ph 2STG EMC FLTR Normal CRNT 100A SCR

Hersteller: INGUN
Category: Contact Probes
Description: Test needle; Spring compression: 4mm; 5.3mm; 5A; steel; Ø: 2.6mm
Type of test accessories: test needle
Operational spring compression: 4mm
Maksimum spring compression: 5.3mm
Current rating: 5A
Contact material: steel
Contact plating: nickel plated
Tip diameter: 2.6mm
Blade tip shape: pyramid hexagonal
Manufacturer series: GKS-113
Max. contact resistance:: 30mΩ
Operating temperature: -40...80°C
Mounting: push-in
Test accessories features: magnetic
Length: 27.3mm
Spring compression force: 1N

Hersteller: INGUN
Category: Contact Probes
Description: Test needle; Spring compression: 4mm; 5.3mm; 5A; steel; Ø: 2.6mm
Type of test accessories: test needle
Operational spring compression: 4mm
Maksimum spring compression: 5.3mm
Current rating: 5A
Contact material: steel
Contact plating: nickel plated
Tip diameter: 2.6mm
Blade tip shape: pyramid hexagonal
Manufacturer series: GKS-113
Max. contact resistance:: 30mΩ
Operating temperature: -40...80°C
Mounting: screw-in
Test accessories features: magnetic
Length: 28.3mm
Spring compression force: 1N

Hersteller: ONS/FAI
IGBT, 1000 V, 60 A, NPT Trench IGBT Транзистори

Hersteller: ONS/FAI
IGBT, 1000 V, 60 A, NPT Trench IGBT Транзистори

Hersteller: TE Connectivity Schaffner
Description: FN3060N-100-99