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AOTF7N65 AOTF7N65
Produktcode: 153855
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A&O aot7n65-datasheet.pdf Transistoren > MOSFET N-CH
Uds,V: 650 V
Idd,A: 7 А
Rds(on), Ohm: 1,56 Ohm
Ciss, pF/Qg, nC: 887/19
JHGF: THT
auf Bestellung 53 Stück:
Lieferzeit 21-28 Tag (e)
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7N65F 7N65F EVVO 7N65F_P.pdf Description: MOSFET N-CH 650V 7A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 129 Stücke:
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100+1.09 EUR
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7N65F 7N65F UMW f03ca9eb9afe0cac12f0c823bf0e29ed.pdf Description: MOSFET N-CH 650V 7A TO220F
Packaging: Tube
auf Bestellung 993 Stücke:
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12+1.50 EUR
100+1.00 EUR
500+0.78 EUR
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7N65L 7N65L UMW f03ca9eb9afe0cac12f0c823bf0e29ed.pdf Description: MOSFET N-CH 650V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 2498 Stücke:
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15+1.19 EUR
100+0.78 EUR
500+0.61 EUR
1000+0.55 EUR
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AOD7N65 AOD7N65 Alpha & Omega Semiconductor Inc. AOD7N65.pdf Description: MOSFET N-CH 650V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
auf Bestellung 6796 Stücke:
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10+1.77 EUR
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AOD7N65 AOD7N65 Alpha & Omega Semiconductor Inc. AOD7N65.pdf Description: MOSFET N-CH 650V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
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AOT7N65 AOT7N65 ALPHA & OMEGA SEMICONDUCTOR TO220.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.5A
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.56Ω
Mounting: THT
Gate charge: 19nC
Kind of channel: enhancement
auf Bestellung 362 Stücke:
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AOT7N65 AOT7N65 ALPHA & OMEGA SEMICONDUCTOR TO220.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.5A
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.56Ω
Mounting: THT
Gate charge: 19nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 362 Stücke:
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94+0.76 EUR
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AOT7N65 ALPHA&OMEGA TO220.pdf Transistor N-Channel MOSFET; 650V; 30V; 1,56Ohm; 7A; 192W; -55°C ~ 150°C; AOT7N65 TAOT7n65
Anzahl je Verpackung: 10 Stücke
auf Bestellung 12 Stücke:
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20+2.20 EUR
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AOTF7N65 ALPHA&OMEGA TO220F.pdf Transistor N-Channel MOSFET; 650V; 30V; 1,56Ohm; 7A; 38,5W; -55°C ~ 150°C; AOTF7N65 TAOTF7n65
Anzahl je Verpackung: 10 Stücke
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AOTF7N65 ALPHA&OMEGA TO220F.pdf Transistor N-Channel MOSFET; 650V; 30V; 1,56Ohm; 7A; 38,5W; -55°C ~ 150°C; AOTF7N65 TAOTF7n65
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
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10+3.10 EUR
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BXP7N65CF BXP7N65CF BRIDGELUX BXP7N65.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.10 EUR
84+0.85 EUR
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180+0.40 EUR
191+0.38 EUR
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BXP7N65CF BXP7N65CF BRIDGELUX BXP7N65.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 841 Stücke:
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84+0.85 EUR
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BXP7N65D BXP7N65D BRIDGELUX BXP7N65.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2466 Stücke:
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98+0.74 EUR
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203+0.35 EUR
214+0.33 EUR
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BXP7N65D BXP7N65D BRIDGELUX BXP7N65.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2466 Stücke:
Lieferzeit 7-14 Tag (e)
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98+0.74 EUR
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214+0.33 EUR
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BXP7N65P BXP7N65P BRIDGELUX BXP7N65.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 712 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
89+0.81 EUR
100+0.72 EUR
155+0.46 EUR
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BXP7N65P BXP7N65P BRIDGELUX BXP7N65.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 712 Stücke:
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61+1.19 EUR
89+0.81 EUR
100+0.72 EUR
155+0.46 EUR
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DI5A7N65D1K-AQ DI5A7N65D1K-AQ Diotec Semiconductor di5a7n65d1k.pdf MOSFETs MOSFET, DPAK, 650V, 5.7A, 150C, N, AEC-Q101
auf Bestellung 2427 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.96 EUR
10+2.55 EUR
100+1.74 EUR
500+1.39 EUR
2500+1.16 EUR
5000+1.11 EUR
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DI5A7N65D1K-AQ DI5A7N65D1K-AQ Diotec Semiconductor di5a7n65d1k.pdf Description: MOSFET, DPAK, 650V, 5.7A, 150C,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 325 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2480 Stücke:
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5+4.00 EUR
10+2.57 EUR
100+1.75 EUR
500+1.40 EUR
1000+1.29 EUR
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FCH067N65S3-F155 FCH067N65S3-F155 onsemi fch067n65s3-d.pdf Description: MOSFET N-CH 650V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 22A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
auf Bestellung 44 Stücke:
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2+9.15 EUR
30+5.54 EUR
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FCH067N65S3-F155 FCH067N65S3-F155 onsemi / Fairchild fch067n65s3-d.pdf MOSFETs SuperFET3 650V 67 mOhm
auf Bestellung 654 Stücke:
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1+9.08 EUR
30+8.10 EUR
1020+5.72 EUR
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FCH077N65F-F085 FCH077N65F-F085 onsemi fch077n65f_f085-d.pdf Description: MOSFET N-CH 650V 54A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7162 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3104 Stücke:
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1+19.34 EUR
30+11.61 EUR
120+9.92 EUR
510+9.67 EUR
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FCH077N65F-F085 FCH077N65F-F085 onsemi / Fairchild fch077n65f_f085-d.pdf FAIR-S-A0000209824-1.pdf?t.download=true&u=5oefqw MOSFETs 650V N-Channel SuperFET II MOSFET
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10+13.31 EUR
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FCH077N65F-F085 FCH077N65F-F085 Fairchild Semiconductor FAIR-S-A0000209824-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 650V 54A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7162 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 148 Stücke:
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FCH077N65F-F155 FCH077N65F-F155 onsemi / Fairchild fch077n65f-d.pdf FAIR-S-A0000571263-1.pdf?t.download=true&u=5oefqw MOSFETs SuperFET2 650V, 77 mOhm, FRFET
auf Bestellung 1332 Stücke:
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30+9.96 EUR
120+9.10 EUR
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FCP067N65S3 FCP067N65S3 onsemi fcp067n65s3-d.pdf Description: MOSFET N-CH 650V 44A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 22A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
auf Bestellung 1215 Stücke:
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50+6.74 EUR
100+6.19 EUR
500+5.43 EUR
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FCP067N65S3 FCP067N65S3 onsemi / Fairchild fcp067n65s3-d.pdf MOSFETs 650V 44A N-Channel SuperFET MOSFET
auf Bestellung 876 Stücke:
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10+10.17 EUR
25+6.25 EUR
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500+5.61 EUR
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FCPF067N65S3 FCPF067N65S3 onsemi / Fairchild fcpf067n65s3-d.pdf MOSFETs SuperFET3 650V 67 mOhm
auf Bestellung 5143 Stücke:
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25+6.11 EUR
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FCPF067N65S3 FCPF067N65S3 onsemi fcpf067n65s3-d.pdf Description: MOSFET N-CH 650V 44A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 22A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
auf Bestellung 1165 Stücke:
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2+13.09 EUR
50+7.11 EUR
100+6.53 EUR
500+5.79 EUR
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FQB7N65CTM FQB7N65CTM Fairchild Semiconductor FAIRS27372-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 650V 7A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 173W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V
auf Bestellung 7686 Stücke:
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FQP7N65C FQP7N65C Fairchild Semiconductor FAIRS34459-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 650V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V
auf Bestellung 24690 Stücke:
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FQPF7N65C FQPF7N65C onsemi fqpf7n65c-d.pdf Description: MOSFET N-CH 650V 7A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V
auf Bestellung 22965 Stücke:
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FQPF7N65CYDTU FQPF7N65CYDTU onsemi fqpf7n65c-d.pdf Description: MOSFET N-CH 650V 7A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V
auf Bestellung 52651 Stücke:
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MCPF07N65-BP MCPF07N65-BP Micro Commercial Co MCPF05N80(TO-220F).pdf Description: MOSFET N-CH 650V 7A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 3713 Stücke:
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9+1.97 EUR
15+1.24 EUR
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500+0.63 EUR
1000+0.57 EUR
2000+0.52 EUR
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MSJU07N65A-TP MSJU07N65A-TP Micro Commercial Co MSJU07N65A(DPAK).pdf Description: N-CHANNEL MOSFET, DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
auf Bestellung 2455 Stücke:
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100+1.57 EUR
500+1.25 EUR
1000+1.14 EUR
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NTH027N65S3F-F155 NTH027N65S3F-F155 onsemi nth027n65s3f-d.pdf MOSFETs SF3 FRFET 650V 27MOHM
auf Bestellung 1226 Stücke:
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10+30.55 EUR
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NTH027N65S3F-F155 NTH027N65S3F-F155 onsemi nth027n65s3f-d.pdf Description: MOSFET N-CH 650V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 7.5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 400 V
auf Bestellung 472 Stücke:
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1+38.91 EUR
30+24.83 EUR
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NTH4L027N65S3F NTH4L027N65S3F onsemi nth4l027n65s3f-d.pdf MOSFETs FRFET 650V 75A 27.4 mOhm
auf Bestellung 42 Stücke:
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1+37.24 EUR
10+27.19 EUR
30+27.16 EUR
60+27.14 EUR
270+24.46 EUR
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NTH4L027N65S3F NTH4L027N65S3F onsemi nth4l027n65s3f-d.pdf Description: MOSFET N-CH 650V 75A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-4L
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 400 V
auf Bestellung 429 Stücke:
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10+28.09 EUR
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NTH4LN067N65S3H NTH4LN067N65S3H onsemi nth4ln067n65s3h-d.pdf MOSFETs Power MOSFET, N-Channel, SUPERFET III, FAST, 650 V, 40 A, 67 mohm, TO-247 narrow 4lead
auf Bestellung 377 Stücke:
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1+11.55 EUR
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NTH4LN067N65S3H NTH4LN067N65S3H onsemi nth4ln067n65s3h-d.pdf Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Supplier Device Package: TO-247-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
auf Bestellung 218 Stücke:
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NTHL027N65S3HF NTHL027N65S3HF onsemi nthl027n65s3hf-d.pdf Description: MOSFET N-CH 650V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 400 V
auf Bestellung 8353 Stücke:
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NTHL027N65S3HF NTHL027N65S3HF onsemi nthl027n65s3hf-d.pdf MOSFETs FRFET 650V 75A 27.4mOhm
auf Bestellung 1299 Stücke:
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NTHL067N65S3H NTHL067N65S3H onsemi nthl067n65s3h-d.pdf MOSFETs Power MOSFET, N-Channel, SUPERFET III, FAST, 650 V, 40 A, 67 mohm, TO-247
auf Bestellung 82 Stücke:
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1+10.77 EUR
10+9.59 EUR
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NTHL067N65S3H NTHL067N65S3H onsemi nthl067n65s3h-d.pdf Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
auf Bestellung 450 Stücke:
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30+7.98 EUR
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NTP067N65S3H NTP067N65S3H onsemi ntp067n65s3h-d.pdf Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
auf Bestellung 3672 Stücke:
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100+7.21 EUR
500+6.50 EUR
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NTP067N65S3H NTP067N65S3H onsemi ntp067n65s3h-d.pdf MOSFETs Power MOSFET, N-Channel, SUPERFET III, FAST, 650 V, 40 A, 67 mohm, TO-220
auf Bestellung 1424 Stücke:
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1+8.31 EUR
50+7.06 EUR
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250+6.81 EUR
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NVH4L027N65S3F NVH4L027N65S3F onsemi nvh4l027n65s3f-d.pdf Description: SF3 FRFET AUTO 27MOHM TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7780 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8899 Stücke:
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1+28.32 EUR
30+20.27 EUR
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NVHL027N65S3F NVHL027N65S3F onsemi nvhl027n65s3f-d.pdf Description: MOSFET N-CH 650V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7780 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 477 Stücke:
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NVHL027N65S3F NVHL027N65S3F onsemi nvhl027n65s3f-d.pdf MOSFETs Single N-Channel Power MOSFET SUPERFET III, FRFET, 650 V , 75 A, 27.4 mohm, TO-247
auf Bestellung 440 Stücke:
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SIHG47N65E-GE3 SIHG47N65E-GE3 Vishay Siliconix sihg47n65e.pdf Description: MOSFET N-CH 650V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 24A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5682 pF @ 100 V
auf Bestellung 484 Stücke:
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2+15.28 EUR
10+10.45 EUR
100+7.73 EUR
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SIHG47N65E-GE3 SIHG47N65E-GE3 Vishay / Siliconix sihg47n65e.pdf MOSFETs 650V Vds 30V Vgs TO-247AC
auf Bestellung 648 Stücke:
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1+13.16 EUR
10+10.38 EUR
25+9.20 EUR
100+7.67 EUR
250+7.50 EUR
500+7.02 EUR
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SIHJ7N65E-T1-GE3 SIHJ7N65E-T1-GE3 Vishay / Siliconix sihj7n65e.pdf MOSFETs 650V Vds 30V Vgs PowerPAK SO-8L
auf Bestellung 2502 Stücke:
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1+4.49 EUR
10+3.43 EUR
100+2.75 EUR
500+2.29 EUR
1000+1.97 EUR
3000+1.87 EUR
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SPI07N65C3XKSA1 SPI07N65C3XKSA1 Infineon Technologies INFNS17080-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
auf Bestellung 23000 Stücke:
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335+1.52 EUR
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SPW47N65C3 SPW47N65C3 Infineon Technologies Infineon_SPW47N65C3_DS_v01_02_en-3360035.pdf MOSFETs N-Ch 650V 47A TO247-3 CoolMOS C3
auf Bestellung 159 Stücke:
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1+24.09 EUR
10+22.84 EUR
25+22.33 EUR
50+20.63 EUR
100+19.71 EUR
240+12.81 EUR
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STB57N65M5 STB57N65M5 STMicroelectronics stb57n65m5-1850283.pdf MOSFETs N-Ch 650V 0.056 Ohm 42 A MDmesh M5
auf Bestellung 2041 Stücke:
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1+18.73 EUR
10+13.02 EUR
25+13.01 EUR
100+9.80 EUR
500+9.47 EUR
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STB57N65M5 STB57N65M5 STMicroelectronics en.DM00049152.pdf Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 9686 Stücke:
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1+19.17 EUR
10+13.30 EUR
100+9.97 EUR
500+9.19 EUR
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STB57N65M5 STB57N65M5 STMicroelectronics en.DM00049152.pdf Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+9.19 EUR
Mindestbestellmenge: 1000
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STD7N65M2 STD7N65M2 STMicroelectronics std7n65m2-1850610.pdf MOSFETs N-channel 650 V, 0.98 Ohm typ 5 A MDmesh M2 Power MOSFET
auf Bestellung 1016 Stücke:
Lieferzeit 10-14 Tag (e)
1+2.87 EUR
10+1.94 EUR
100+1.48 EUR
500+1.25 EUR
1000+1.15 EUR
2500+1.02 EUR
5000+1.00 EUR
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STD7N65M6 STD7N65M6 STMicroelectronics std7n65m6-1850735.pdf MOSFETs N-channel 650 V, 0.91 Ohm typ 5 A MDmesh M6 Power MOSFET
auf Bestellung 395 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.62 EUR
100+2.59 EUR
500+1.62 EUR
1000+1.39 EUR
2500+1.15 EUR
5000+1.11 EUR
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AOTF7N65
Produktcode: 153855
zu Favoriten hinzufügen Lieblingsprodukt

aot7n65-datasheet.pdf
AOTF7N65
Hersteller: A&O
Transistoren > MOSFET N-CH
Uds,V: 650 V
Idd,A: 7 А
Rds(on), Ohm: 1,56 Ohm
Ciss, pF/Qg, nC: 887/19
JHGF: THT
auf Bestellung 53 Stück:
Lieferzeit 21-28 Tag (e)
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7N65F 7N65F_P.pdf
7N65F
Hersteller: EVVO
Description: MOSFET N-CH 650V 7A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 129 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
11+1.64 EUR
100+1.09 EUR
Mindestbestellmenge: 7
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7N65F f03ca9eb9afe0cac12f0c823bf0e29ed.pdf
7N65F
Hersteller: UMW
Description: MOSFET N-CH 650V 7A TO220F
Packaging: Tube
auf Bestellung 993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.38 EUR
12+1.50 EUR
100+1.00 EUR
500+0.78 EUR
Mindestbestellmenge: 8
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7N65L f03ca9eb9afe0cac12f0c823bf0e29ed.pdf
7N65L
Hersteller: UMW
Description: MOSFET N-CH 650V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 2498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.90 EUR
15+1.19 EUR
100+0.78 EUR
500+0.61 EUR
1000+0.55 EUR
Mindestbestellmenge: 10
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AOD7N65 AOD7N65.pdf
AOD7N65
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
auf Bestellung 6796 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.80 EUR
10+1.77 EUR
100+1.18 EUR
500+0.93 EUR
1000+0.85 EUR
Mindestbestellmenge: 7
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AOD7N65 AOD7N65.pdf
AOD7N65
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.76 EUR
5000+0.71 EUR
Mindestbestellmenge: 2500
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AOT7N65 TO220.pdf
AOT7N65
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.5A
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.56Ω
Mounting: THT
Gate charge: 19nC
Kind of channel: enhancement
auf Bestellung 362 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
69+1.05 EUR
89+0.81 EUR
94+0.76 EUR
Mindestbestellmenge: 61
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AOT7N65 TO220.pdf
AOT7N65
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.5A
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.56Ω
Mounting: THT
Gate charge: 19nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 362 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
61+1.17 EUR
69+1.05 EUR
89+0.81 EUR
94+0.76 EUR
1000+0.75 EUR
Mindestbestellmenge: 61
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AOT7N65 TO220.pdf
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 650V; 30V; 1,56Ohm; 7A; 192W; -55°C ~ 150°C; AOT7N65 TAOT7n65
Anzahl je Verpackung: 10 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+2.20 EUR
Mindestbestellmenge: 20
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AOTF7N65 TO220F.pdf
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 650V; 30V; 1,56Ohm; 7A; 38,5W; -55°C ~ 150°C; AOTF7N65 TAOTF7n65
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+2.40 EUR
Mindestbestellmenge: 20
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AOTF7N65 TO220F.pdf
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 650V; 30V; 1,56Ohm; 7A; 38,5W; -55°C ~ 150°C; AOTF7N65 TAOTF7n65
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+3.10 EUR
Mindestbestellmenge: 10
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BXP7N65CF BXP7N65.pdf
BXP7N65CF
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.10 EUR
84+0.85 EUR
104+0.69 EUR
180+0.40 EUR
191+0.38 EUR
Mindestbestellmenge: 65
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BXP7N65CF BXP7N65.pdf
BXP7N65CF
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 841 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
65+1.10 EUR
84+0.85 EUR
104+0.69 EUR
180+0.40 EUR
191+0.38 EUR
Mindestbestellmenge: 65
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BXP7N65D BXP7N65.pdf
BXP7N65D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2466 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
98+0.74 EUR
121+0.59 EUR
203+0.35 EUR
214+0.33 EUR
Mindestbestellmenge: 67
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BXP7N65D BXP7N65.pdf
BXP7N65D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2466 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
67+1.07 EUR
98+0.74 EUR
121+0.59 EUR
203+0.35 EUR
214+0.33 EUR
Mindestbestellmenge: 67
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BXP7N65P BXP7N65.pdf
BXP7N65P
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 712 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
89+0.81 EUR
100+0.72 EUR
155+0.46 EUR
164+0.44 EUR
Mindestbestellmenge: 61
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BXP7N65P BXP7N65.pdf
BXP7N65P
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 712 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
61+1.19 EUR
89+0.81 EUR
100+0.72 EUR
155+0.46 EUR
164+0.44 EUR
1000+0.43 EUR
Mindestbestellmenge: 61
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DI5A7N65D1K-AQ di5a7n65d1k.pdf
DI5A7N65D1K-AQ
Hersteller: Diotec Semiconductor
MOSFETs MOSFET, DPAK, 650V, 5.7A, 150C, N, AEC-Q101
auf Bestellung 2427 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.96 EUR
10+2.55 EUR
100+1.74 EUR
500+1.39 EUR
2500+1.16 EUR
5000+1.11 EUR
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DI5A7N65D1K-AQ di5a7n65d1k.pdf
DI5A7N65D1K-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET, DPAK, 650V, 5.7A, 150C,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 325 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.00 EUR
10+2.57 EUR
100+1.75 EUR
500+1.40 EUR
1000+1.29 EUR
Mindestbestellmenge: 5
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FCH067N65S3-F155 fch067n65s3-d.pdf
FCH067N65S3-F155
Hersteller: onsemi
Description: MOSFET N-CH 650V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 22A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.15 EUR
30+5.54 EUR
Mindestbestellmenge: 2
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FCH067N65S3-F155 fch067n65s3-d.pdf
FCH067N65S3-F155
Hersteller: onsemi / Fairchild
MOSFETs SuperFET3 650V 67 mOhm
auf Bestellung 654 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.08 EUR
30+8.10 EUR
1020+5.72 EUR
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FCH077N65F-F085 fch077n65f_f085-d.pdf
FCH077N65F-F085
Hersteller: onsemi
Description: MOSFET N-CH 650V 54A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7162 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3104 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.34 EUR
30+11.61 EUR
120+9.92 EUR
510+9.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCH077N65F-F085 fch077n65f_f085-d.pdf FAIR-S-A0000209824-1.pdf?t.download=true&u=5oefqw
FCH077N65F-F085
Hersteller: onsemi / Fairchild
MOSFETs 650V N-Channel SuperFET II MOSFET
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+13.69 EUR
10+13.31 EUR
30+9.98 EUR
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FCH077N65F-F085 FAIR-S-A0000209824-1.pdf?t.download=true&u=5oefqw
FCH077N65F-F085
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 650V 54A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7162 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 148 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+11.19 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
FCH077N65F-F155 fch077n65f-d.pdf FAIR-S-A0000571263-1.pdf?t.download=true&u=5oefqw
FCH077N65F-F155
Hersteller: onsemi / Fairchild
MOSFETs SuperFET2 650V, 77 mOhm, FRFET
auf Bestellung 1332 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+15.84 EUR
30+9.96 EUR
120+9.10 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCP067N65S3 fcp067n65s3-d.pdf
FCP067N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 44A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 22A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
auf Bestellung 1215 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.48 EUR
50+6.74 EUR
100+6.19 EUR
500+5.43 EUR
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FCP067N65S3 fcp067n65s3-d.pdf
FCP067N65S3
Hersteller: onsemi / Fairchild
MOSFETs 650V 44A N-Channel SuperFET MOSFET
auf Bestellung 876 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.21 EUR
10+10.17 EUR
25+6.25 EUR
100+5.76 EUR
500+5.61 EUR
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FCPF067N65S3 fcpf067n65s3-d.pdf
FCPF067N65S3
Hersteller: onsemi / Fairchild
MOSFETs SuperFET3 650V 67 mOhm
auf Bestellung 5143 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+11.16 EUR
25+6.11 EUR
100+5.97 EUR
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FCPF067N65S3 fcpf067n65s3-d.pdf
FCPF067N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 44A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 22A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
auf Bestellung 1165 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.09 EUR
50+7.11 EUR
100+6.53 EUR
500+5.79 EUR
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FQB7N65CTM FAIRS27372-1.pdf?t.download=true&u=5oefqw
FQB7N65CTM
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 650V 7A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 173W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V
auf Bestellung 7686 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
193+2.63 EUR
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FQP7N65C FAIRS34459-1.pdf?t.download=true&u=5oefqw
FQP7N65C
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 650V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V
auf Bestellung 24690 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
370+1.36 EUR
Mindestbestellmenge: 370
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FQPF7N65C fqpf7n65c-d.pdf
FQPF7N65C
Hersteller: onsemi
Description: MOSFET N-CH 650V 7A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V
auf Bestellung 22965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
348+1.45 EUR
Mindestbestellmenge: 348
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FQPF7N65CYDTU fqpf7n65c-d.pdf
FQPF7N65CYDTU
Hersteller: onsemi
Description: MOSFET N-CH 650V 7A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V
auf Bestellung 52651 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.91 EUR
Mindestbestellmenge: 1000
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MCPF07N65-BP MCPF05N80(TO-220F).pdf
MCPF07N65-BP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 650V 7A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 3713 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
15+1.24 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.57 EUR
2000+0.52 EUR
Mindestbestellmenge: 9
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MSJU07N65A-TP MSJU07N65A(DPAK).pdf
MSJU07N65A-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
auf Bestellung 2455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.61 EUR
10+2.31 EUR
100+1.57 EUR
500+1.25 EUR
1000+1.14 EUR
Mindestbestellmenge: 5
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NTH027N65S3F-F155 nth027n65s3f-d.pdf
NTH027N65S3F-F155
Hersteller: onsemi
MOSFETs SF3 FRFET 650V 27MOHM
auf Bestellung 1226 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+30.61 EUR
10+30.55 EUR
30+24.53 EUR
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NTH027N65S3F-F155 nth027n65s3f-d.pdf
NTH027N65S3F-F155
Hersteller: onsemi
Description: MOSFET N-CH 650V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 7.5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 400 V
auf Bestellung 472 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.91 EUR
30+24.83 EUR
120+23.77 EUR
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NTH4L027N65S3F nth4l027n65s3f-d.pdf
NTH4L027N65S3F
Hersteller: onsemi
MOSFETs FRFET 650V 75A 27.4 mOhm
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+37.24 EUR
10+27.19 EUR
30+27.16 EUR
60+27.14 EUR
270+24.46 EUR
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NTH4L027N65S3F nth4l027n65s3f-d.pdf
NTH4L027N65S3F
Hersteller: onsemi
Description: MOSFET N-CH 650V 75A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-4L
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 400 V
auf Bestellung 429 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.84 EUR
10+28.09 EUR
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NTH4LN067N65S3H nth4ln067n65s3h-d.pdf
NTH4LN067N65S3H
Hersteller: onsemi
MOSFETs Power MOSFET, N-Channel, SUPERFET III, FAST, 650 V, 40 A, 67 mohm, TO-247 narrow 4lead
auf Bestellung 377 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+11.55 EUR
10+8.24 EUR
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NTH4LN067N65S3H nth4ln067n65s3h-d.pdf
NTH4LN067N65S3H
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Supplier Device Package: TO-247-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
auf Bestellung 218 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.70 EUR
30+9.90 EUR
120+8.40 EUR
Mindestbestellmenge: 2
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NTHL027N65S3HF nthl027n65s3hf-d.pdf
NTHL027N65S3HF
Hersteller: onsemi
Description: MOSFET N-CH 650V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 400 V
auf Bestellung 8353 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.89 EUR
30+23.42 EUR
120+22.20 EUR
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NTHL027N65S3HF nthl027n65s3hf-d.pdf
NTHL027N65S3HF
Hersteller: onsemi
MOSFETs FRFET 650V 75A 27.4mOhm
auf Bestellung 1299 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.54 EUR
10+30.69 EUR
30+22.93 EUR
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NTHL067N65S3H nthl067n65s3h-d.pdf
NTHL067N65S3H
Hersteller: onsemi
MOSFETs Power MOSFET, N-Channel, SUPERFET III, FAST, 650 V, 40 A, 67 mohm, TO-247
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.77 EUR
10+9.59 EUR
30+8.24 EUR
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NTHL067N65S3H nthl067n65s3h-d.pdf
NTHL067N65S3H
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.04 EUR
30+7.98 EUR
Mindestbestellmenge: 2
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NTP067N65S3H ntp067n65s3h-d.pdf
NTP067N65S3H
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
auf Bestellung 3672 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.31 EUR
50+7.83 EUR
100+7.21 EUR
500+6.50 EUR
Mindestbestellmenge: 2
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NTP067N65S3H ntp067n65s3h-d.pdf
NTP067N65S3H
Hersteller: onsemi
MOSFETs Power MOSFET, N-Channel, SUPERFET III, FAST, 650 V, 40 A, 67 mohm, TO-220
auf Bestellung 1424 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.31 EUR
50+7.06 EUR
100+6.88 EUR
250+6.81 EUR
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NVH4L027N65S3F nvh4l027n65s3f-d.pdf
NVH4L027N65S3F
Hersteller: onsemi
Description: SF3 FRFET AUTO 27MOHM TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7780 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8899 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.32 EUR
30+20.27 EUR
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NVHL027N65S3F nvhl027n65s3f-d.pdf
NVHL027N65S3F
Hersteller: onsemi
Description: MOSFET N-CH 650V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7780 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 477 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.83 EUR
30+21.32 EUR
120+19.89 EUR
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NVHL027N65S3F nvhl027n65s3f-d.pdf
NVHL027N65S3F
Hersteller: onsemi
MOSFETs Single N-Channel Power MOSFET SUPERFET III, FRFET, 650 V , 75 A, 27.4 mohm, TO-247
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.17 EUR
10+25.38 EUR
30+20.52 EUR
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SIHG47N65E-GE3 sihg47n65e.pdf
SIHG47N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 24A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5682 pF @ 100 V
auf Bestellung 484 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.28 EUR
10+10.45 EUR
100+7.73 EUR
Mindestbestellmenge: 2
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SIHG47N65E-GE3 sihg47n65e.pdf
SIHG47N65E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 650V Vds 30V Vgs TO-247AC
auf Bestellung 648 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+13.16 EUR
10+10.38 EUR
25+9.20 EUR
100+7.67 EUR
250+7.50 EUR
500+7.02 EUR
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SIHJ7N65E-T1-GE3 sihj7n65e.pdf
SIHJ7N65E-T1-GE3
Hersteller: Vishay / Siliconix
MOSFETs 650V Vds 30V Vgs PowerPAK SO-8L
auf Bestellung 2502 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.49 EUR
10+3.43 EUR
100+2.75 EUR
500+2.29 EUR
1000+1.97 EUR
3000+1.87 EUR
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SPI07N65C3XKSA1 INFNS17080-1.pdf?t.download=true&u=5oefqw
SPI07N65C3XKSA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
auf Bestellung 23000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
335+1.52 EUR
Mindestbestellmenge: 335
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SPW47N65C3 Infineon_SPW47N65C3_DS_v01_02_en-3360035.pdf
SPW47N65C3
Hersteller: Infineon Technologies
MOSFETs N-Ch 650V 47A TO247-3 CoolMOS C3
auf Bestellung 159 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.09 EUR
10+22.84 EUR
25+22.33 EUR
50+20.63 EUR
100+19.71 EUR
240+12.81 EUR
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STB57N65M5 stb57n65m5-1850283.pdf
STB57N65M5
Hersteller: STMicroelectronics
MOSFETs N-Ch 650V 0.056 Ohm 42 A MDmesh M5
auf Bestellung 2041 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.73 EUR
10+13.02 EUR
25+13.01 EUR
100+9.80 EUR
500+9.47 EUR
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STB57N65M5 en.DM00049152.pdf
STB57N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 9686 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.17 EUR
10+13.30 EUR
100+9.97 EUR
500+9.19 EUR
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STB57N65M5 en.DM00049152.pdf
STB57N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+9.19 EUR
Mindestbestellmenge: 1000
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STD7N65M2 std7n65m2-1850610.pdf
STD7N65M2
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.98 Ohm typ 5 A MDmesh M2 Power MOSFET
auf Bestellung 1016 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.87 EUR
10+1.94 EUR
100+1.48 EUR
500+1.25 EUR
1000+1.15 EUR
2500+1.02 EUR
5000+1.00 EUR
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STD7N65M6 std7n65m6-1850735.pdf
STD7N65M6
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.91 Ohm typ 5 A MDmesh M6 Power MOSFET
auf Bestellung 395 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.62 EUR
100+2.59 EUR
500+1.62 EUR
1000+1.39 EUR
2500+1.15 EUR
5000+1.11 EUR
Mindestbestellmenge: 2
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