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Foto | Bezeichnung | Hersteller | Beschreibung |
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AON7506 Produktcode: 163661
zu Favoriten hinzufügen
Lieblingsprodukt
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Alpha & Omega |
![]() Uds,V: 30 V Idd,A: 12 А Rds(on), Ohm: 15,8 mOhm Ciss, pF/Qg, nC: 542/9 JHGF: SMD |
Produkt ist nicht verfügbar
erwartet:
100 Stück
100 Stück - erwartet 20.02.2025
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Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AON7140 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 18.5W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 18.5W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 42nC Kind of channel: enhancement |
auf Bestellung 1075 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7140 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 18.5W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 18.5W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 42nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1075 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7230 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 21W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Power dissipation: 21W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 13nC Kind of channel: enhancement |
auf Bestellung 704 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7230 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 21W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Power dissipation: 21W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 13nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 704 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7246 | ALPHA |
![]() Anzahl je Verpackung: 25 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7246E | Alpha & Omega Semiconductor |
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auf Bestellung 4725 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7246E | Alpha & Omega Semiconductor |
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auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7246E | Alpha & Omega Semiconductor |
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auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7246E | Alpha & Omega Semiconductor |
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auf Bestellung 4725 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7254 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 11A; 15.6W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 11A Power dissipation: 15.6W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 54mΩ Mounting: SMD Gate charge: 5.6nC Kind of channel: enhancement |
auf Bestellung 3281 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7254 | ALPHA&OMEGA |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7254 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 11A; 15.6W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 11A Power dissipation: 15.6W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 54mΩ Mounting: SMD Gate charge: 5.6nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3281 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7254 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V Power Dissipation (Max): 4.1W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V |
auf Bestellung 32394 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7254 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V Power Dissipation (Max): 4.1W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7254 | Alpha & Omega Semiconductor |
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auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7254 | Alpha & Omega Semiconductor |
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auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7262E | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 34A; 17W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 34A Power dissipation: 17W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhancement |
auf Bestellung 4804 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7262E | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 34A; 17W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 34A Power dissipation: 17W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4804 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7262E | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 30 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7262E | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 30 V |
auf Bestellung 12448 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7264E | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 11W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Power dissipation: 11W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 15.5mΩ Mounting: SMD Gate charge: 25nC Kind of channel: enhancement |
auf Bestellung 175 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7264E | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 11W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Power dissipation: 11W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 15.5mΩ Mounting: SMD Gate charge: 25nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 175 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7280 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 39A; 33W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 39A Power dissipation: 33W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 26.5nC Kind of channel: enhancement |
auf Bestellung 1636 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7280 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 39A; 33W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 39A Power dissipation: 33W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 26.5nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1636 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7280 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Power Dissipation (Max): 6.3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7280 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Power Dissipation (Max): 6.3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V |
auf Bestellung 11880 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7292 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 11W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 11W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 8nC Kind of channel: enhancement |
auf Bestellung 2980 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7292 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V Power Dissipation (Max): 4.1W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V |
auf Bestellung 195000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7292 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V Power Dissipation (Max): 4.1W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V |
auf Bestellung 197977 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7296 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 8A; 8.3W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 8A Power dissipation: 8.3W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 66mΩ Mounting: SMD Gate charge: 3nC Kind of channel: enhancement |
auf Bestellung 1029 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7296 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 8A; 8.3W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 8A Power dissipation: 8.3W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 66mΩ Mounting: SMD Gate charge: 3nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1029 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7296 | ALPHA&OMEGA |
![]() Anzahl je Verpackung: 50 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7296 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7296 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V |
auf Bestellung 24988 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7296 | Alpha & Omega Semiconductor |
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auf Bestellung 1775 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7296 | Alpha & Omega Semiconductor |
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auf Bestellung 1775 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7318 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 15.5W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Power dissipation: 15.5W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 1.95mΩ Mounting: SMD Gate charge: 37nC Kind of channel: enhancement |
auf Bestellung 206 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7318 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 15.5W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Power dissipation: 15.5W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 1.95mΩ Mounting: SMD Gate charge: 37nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 206 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7318 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36.5A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 20A, 10V Power Dissipation (Max): 4.1W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7318 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36.5A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 20A, 10V Power Dissipation (Max): 4.1W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V |
auf Bestellung 11351 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7380 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 9.5W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Power dissipation: 9.5W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 6.2nC Kind of channel: enhancement |
auf Bestellung 3777 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7400A | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 10W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 28A Power dissipation: 10W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 9.5nC Kind of channel: enhancement |
auf Bestellung 2148 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7400A | ALPHA&OMEGA |
![]() Anzahl je Verpackung: 25 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7400A | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 10W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 28A Power dissipation: 10W Case: DFN3x3 EP Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 9.5nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2148 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7400A | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V |
auf Bestellung 25000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7400A | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V |
auf Bestellung 27295 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7400A_2C1 | Alpha & Omega Semiconductor | AON7400A_2C1 |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7401 | ALPHA&OMEGA |
![]() Anzahl je Verpackung: 5 Stücke |
auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7403 | ALPHA&OMEGA |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 126 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7404 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 4.5V Power Dissipation (Max): 3.1W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7404 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 4.5V Power Dissipation (Max): 3.1W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V |
auf Bestellung 8815 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7404 | Alpha & Omega Semiconductor |
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auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7404 | Alpha & Omega Semiconductor |
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auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7404G | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 4.5V Power Dissipation (Max): 5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V |
auf Bestellung 1784 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7406 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 6W; DFN3x3A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 15A Power dissipation: 6W Case: DFN3x3A Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 7.5nC Kind of channel: enhancement |
auf Bestellung 5426 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7406 | Allegro |
![]() Anzahl je Verpackung: 50 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7406 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 6W; DFN3x3A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 15A Power dissipation: 6W Case: DFN3x3A Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 7.5nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5426 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7406 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 3.1W (Ta), 15.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 15 V |
auf Bestellung 8674 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7407 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -29A; 12W; DFN3x3 EP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -29A Power dissipation: 12W Case: DFN3x3 EP Gate-source voltage: ±8V On-state resistance: 18mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhancement |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7506 Produktcode: 163661
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Lieblingsprodukt
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Hersteller: Alpha & Omega
Transistoren > MOSFET N-CH
Uds,V: 30 V
Idd,A: 12 А
Rds(on), Ohm: 15,8 mOhm
Ciss, pF/Qg, nC: 542/9
JHGF: SMD
Transistoren > MOSFET N-CH
Uds,V: 30 V
Idd,A: 12 А
Rds(on), Ohm: 15,8 mOhm
Ciss, pF/Qg, nC: 542/9
JHGF: SMD
Produkt ist nicht verfügbar
erwartet:
100 Stück
100 Stück - erwartet 20.02.2025
AON7140 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 18.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 18.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 18.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 18.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
auf Bestellung 1075 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
91+ | 0.79 EUR |
100+ | 0.72 EUR |
112+ | 0.64 EUR |
120+ | 0.60 EUR |
129+ | 0.56 EUR |
500+ | 0.54 EUR |
AON7140 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 18.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 18.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 18.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 18.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1075 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
91+ | 0.79 EUR |
100+ | 0.72 EUR |
112+ | 0.64 EUR |
120+ | 0.60 EUR |
129+ | 0.56 EUR |
500+ | 0.54 EUR |
AON7230 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 21W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 21W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 21W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 21W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
auf Bestellung 704 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.12 EUR |
68+ | 1.06 EUR |
87+ | 0.82 EUR |
92+ | 0.78 EUR |
500+ | 0.75 EUR |
AON7230 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 21W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 21W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 21W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 21W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 704 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.12 EUR |
68+ | 1.06 EUR |
87+ | 0.82 EUR |
92+ | 0.78 EUR |
500+ | 0.75 EUR |
AON7246 |
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Hersteller: ALPHA
Transistor N-Channel MOSFET; 60V; 20V; 26mOhm; 34,5A; 34,7W; -55°C ~ 150°C; AON7246 TAON7246
Anzahl je Verpackung: 25 Stücke
Transistor N-Channel MOSFET; 60V; 20V; 26mOhm; 34,5A; 34,7W; -55°C ~ 150°C; AON7246 TAON7246
Anzahl je Verpackung: 25 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.18 EUR |
AON7246E |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 60V 13A 8-Pin DFN-A EP T/R
Trans MOSFET N-CH 60V 13A 8-Pin DFN-A EP T/R
auf Bestellung 4725 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
254+ | 0.64 EUR |
307+ | 0.51 EUR |
318+ | 0.47 EUR |
500+ | 0.41 EUR |
1000+ | 0.33 EUR |
3000+ | 0.30 EUR |
AON7246E |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 60V 13A 8-Pin DFN-A EP T/R
Trans MOSFET N-CH 60V 13A 8-Pin DFN-A EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.38 EUR |
AON7246E |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 60V 13A 8-Pin DFN-A EP T/R
Trans MOSFET N-CH 60V 13A 8-Pin DFN-A EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.30 EUR |
AON7246E |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 60V 13A 8-Pin DFN-A EP T/R
Trans MOSFET N-CH 60V 13A 8-Pin DFN-A EP T/R
auf Bestellung 4725 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.90 EUR |
242+ | 0.64 EUR |
254+ | 0.59 EUR |
307+ | 0.47 EUR |
318+ | 0.44 EUR |
500+ | 0.38 EUR |
1000+ | 0.31 EUR |
3000+ | 0.28 EUR |
AON7254 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 11A; 15.6W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 11A
Power dissipation: 15.6W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 11A; 15.6W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 11A
Power dissipation: 15.6W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of channel: enhancement
auf Bestellung 3281 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
113+ | 0.64 EUR |
126+ | 0.57 EUR |
146+ | 0.49 EUR |
154+ | 0.46 EUR |
AON7254 |
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Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 150V; 20V; 107mOhm; 17A; 39W; -55°C ~ 150°C; AON7254 TAON7254
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 150V; 20V; 107mOhm; 17A; 39W; -55°C ~ 150°C; AON7254 TAON7254
Anzahl je Verpackung: 10 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 2.17 EUR |
AON7254 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 11A; 15.6W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 11A
Power dissipation: 15.6W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 11A; 15.6W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 11A
Power dissipation: 15.6W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3281 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
113+ | 0.64 EUR |
126+ | 0.57 EUR |
146+ | 0.49 EUR |
154+ | 0.46 EUR |
AON7254 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 5.5A/17A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Power Dissipation (Max): 4.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V
Description: MOSFET N-CH 150V 5.5A/17A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Power Dissipation (Max): 4.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V
auf Bestellung 32394 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.13 EUR |
10+ | 1.99 EUR |
100+ | 1.34 EUR |
500+ | 1.06 EUR |
1000+ | 0.97 EUR |
AON7254 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 5.5A/17A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Power Dissipation (Max): 4.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V
Description: MOSFET N-CH 150V 5.5A/17A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Power Dissipation (Max): 4.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.86 EUR |
6000+ | 0.80 EUR |
AON7254 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 150V 17A 8-Pin DFN EP T/R
Trans MOSFET N-CH 150V 17A 8-Pin DFN EP T/R
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.80 EUR |
6000+ | 0.74 EUR |
9000+ | 0.68 EUR |
AON7254 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 150V 17A 8-Pin DFN EP T/R
Trans MOSFET N-CH 150V 17A 8-Pin DFN EP T/R
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.80 EUR |
6000+ | 0.74 EUR |
9000+ | 0.68 EUR |
AON7262E |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34A; 17W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34A
Power dissipation: 17W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34A; 17W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34A
Power dissipation: 17W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
auf Bestellung 4804 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
84+ | 0.86 EUR |
140+ | 0.51 EUR |
159+ | 0.45 EUR |
166+ | 0.43 EUR |
178+ | 0.40 EUR |
500+ | 0.39 EUR |
AON7262E |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34A; 17W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34A
Power dissipation: 17W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34A; 17W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34A
Power dissipation: 17W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4804 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
84+ | 0.86 EUR |
140+ | 0.51 EUR |
159+ | 0.45 EUR |
166+ | 0.43 EUR |
178+ | 0.40 EUR |
500+ | 0.39 EUR |
AON7262E |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 21A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 30 V
Description: MOSFET N-CH 60V 21A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.63 EUR |
10000+ | 0.60 EUR |
AON7262E |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 21A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 30 V
Description: MOSFET N-CH 60V 21A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 30 V
auf Bestellung 12448 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.55 EUR |
11+ | 1.60 EUR |
100+ | 1.07 EUR |
500+ | 0.84 EUR |
1000+ | 0.76 EUR |
2000+ | 0.70 EUR |
AON7264E |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 11W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Power dissipation: 11W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 15.5mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 11W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Power dissipation: 11W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 15.5mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
auf Bestellung 175 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
175+ | 0.41 EUR |
AON7264E |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 11W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Power dissipation: 11W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 15.5mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 11W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Power dissipation: 11W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 15.5mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 175 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
175+ | 0.41 EUR |
500+ | 0.31 EUR |
AON7280 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 39A; 33W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 39A
Power dissipation: 33W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 39A; 33W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 39A
Power dissipation: 33W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of channel: enhancement
auf Bestellung 1636 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.79 EUR |
49+ | 1.49 EUR |
61+ | 1.19 EUR |
65+ | 1.12 EUR |
500+ | 1.10 EUR |
AON7280 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 39A; 33W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 39A
Power dissipation: 33W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 39A; 33W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 39A
Power dissipation: 33W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1636 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.79 EUR |
49+ | 1.49 EUR |
61+ | 1.19 EUR |
65+ | 1.12 EUR |
500+ | 1.10 EUR |
AON7280 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 80V 20A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V
Description: MOSFET N-CH 80V 20A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.08 EUR |
6000+ | 1.04 EUR |
AON7280 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 80V 20A/50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V
Description: MOSFET N-CH 80V 20A/50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V
auf Bestellung 11880 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 3.80 EUR |
10+ | 2.44 EUR |
100+ | 1.66 EUR |
500+ | 1.32 EUR |
1000+ | 1.22 EUR |
AON7292 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 11W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 11W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 8nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 11W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 11W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 8nC
Kind of channel: enhancement
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
96+ | 0.75 EUR |
108+ | 0.67 EUR |
141+ | 0.51 EUR |
148+ | 0.48 EUR |
AON7292 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 9A/23A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Power Dissipation (Max): 4.1W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V
Description: MOSFET N-CH 100V 9A/23A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Power Dissipation (Max): 4.1W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V
auf Bestellung 195000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.77 EUR |
6000+ | 0.72 EUR |
9000+ | 0.71 EUR |
AON7292 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 9A/23A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Power Dissipation (Max): 4.1W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V
Description: MOSFET N-CH 100V 9A/23A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Power Dissipation (Max): 4.1W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V
auf Bestellung 197977 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.87 EUR |
10+ | 1.82 EUR |
100+ | 1.22 EUR |
500+ | 0.96 EUR |
1000+ | 0.88 EUR |
AON7296 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; 8.3W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8A
Power dissipation: 8.3W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 3nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; 8.3W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8A
Power dissipation: 8.3W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 3nC
Kind of channel: enhancement
auf Bestellung 1029 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
307+ | 0.23 EUR |
355+ | 0.20 EUR |
376+ | 0.19 EUR |
1000+ | 0.18 EUR |
AON7296 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; 8.3W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8A
Power dissipation: 8.3W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 3nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; 8.3W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8A
Power dissipation: 8.3W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 3nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1029 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
307+ | 0.23 EUR |
355+ | 0.20 EUR |
376+ | 0.19 EUR |
1000+ | 0.18 EUR |
AON7296 |
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Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 100V; 20V; 122mOhm; 12,5A; 20,8W; -55°C ~ 150°C; AON7296 TAON7296
Anzahl je Verpackung: 50 Stücke
Transistor N-Channel MOSFET; 100V; 20V; 122mOhm; 12,5A; 20,8W; -55°C ~ 150°C; AON7296 TAON7296
Anzahl je Verpackung: 50 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 0.80 EUR |
AON7296 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 5A/12.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Description: MOSFET N-CH 100V 5A/12.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.39 EUR |
10000+ | 0.36 EUR |
15000+ | 0.35 EUR |
AON7296 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 5A/12.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Description: MOSFET N-CH 100V 5A/12.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
auf Bestellung 24988 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 1.71 EUR |
17+ | 1.06 EUR |
100+ | 0.69 EUR |
500+ | 0.53 EUR |
1000+ | 0.48 EUR |
2000+ | 0.44 EUR |
AON7296 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 100V 12.5A 8-Pin DFN-A EP
Trans MOSFET N-CH 100V 12.5A 8-Pin DFN-A EP
auf Bestellung 1775 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
365+ | 0.44 EUR |
409+ | 0.38 EUR |
411+ | 0.37 EUR |
500+ | 0.32 EUR |
1000+ | 0.29 EUR |
AON7296 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 100V 12.5A 8-Pin DFN-A EP
Trans MOSFET N-CH 100V 12.5A 8-Pin DFN-A EP
auf Bestellung 1775 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
333+ | 0.48 EUR |
364+ | 0.43 EUR |
365+ | 0.41 EUR |
409+ | 0.35 EUR |
411+ | 0.34 EUR |
500+ | 0.29 EUR |
1000+ | 0.26 EUR |
AON7318 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 15.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 15.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 37nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 15.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 15.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 37nC
Kind of channel: enhancement
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
51+ | 1.42 EUR |
97+ | 0.74 EUR |
109+ | 0.66 EUR |
126+ | 0.57 EUR |
133+ | 0.54 EUR |
AON7318 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 15.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 15.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 37nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 15.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 15.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 37nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 206 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
51+ | 1.42 EUR |
97+ | 0.74 EUR |
109+ | 0.66 EUR |
126+ | 0.57 EUR |
133+ | 0.54 EUR |
AON7318 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 36.5A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 20A, 10V
Power Dissipation (Max): 4.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
Description: MOSFET N-CH 30V 36.5A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 20A, 10V
Power Dissipation (Max): 4.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.60 EUR |
6000+ | 0.55 EUR |
9000+ | 0.53 EUR |
AON7318 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 36.5A/50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 20A, 10V
Power Dissipation (Max): 4.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
Description: MOSFET N-CH 30V 36.5A/50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 20A, 10V
Power Dissipation (Max): 4.1W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
auf Bestellung 11351 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.31 EUR |
13+ | 1.45 EUR |
100+ | 0.96 EUR |
500+ | 0.75 EUR |
1000+ | 0.68 EUR |
AON7380 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 9.5W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 9.5W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 9.5W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 9.5W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhancement
auf Bestellung 3777 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
268+ | 0.27 EUR |
455+ | 0.16 EUR |
486+ | 0.15 EUR |
506+ | 0.14 EUR |
AON7400A |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 10W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Power dissipation: 10W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 10W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Power dissipation: 10W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
auf Bestellung 2148 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
181+ | 0.40 EUR |
260+ | 0.28 EUR |
334+ | 0.21 EUR |
353+ | 0.20 EUR |
AON7400A |
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Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 30V; 20V; 11,3mOhm; 40A; 25W; -55°C ~ 150°C; AON7400A TAON7400a
Anzahl je Verpackung: 25 Stücke
Transistor N-Channel MOSFET; 30V; 20V; 11,3mOhm; 40A; 25W; -55°C ~ 150°C; AON7400A TAON7400a
Anzahl je Verpackung: 25 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 0.73 EUR |
AON7400A |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 10W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Power dissipation: 10W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 10W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Power dissipation: 10W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2148 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
181+ | 0.40 EUR |
260+ | 0.28 EUR |
334+ | 0.21 EUR |
353+ | 0.20 EUR |
AON7400A |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
Description: MOSFET N-CH 30V 15A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.24 EUR |
10000+ | 0.22 EUR |
15000+ | 0.21 EUR |
25000+ | 0.20 EUR |
AON7400A |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
Description: MOSFET N-CH 30V 15A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
auf Bestellung 27295 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 1.13 EUR |
26+ | 0.70 EUR |
100+ | 0.45 EUR |
500+ | 0.34 EUR |
1000+ | 0.31 EUR |
2000+ | 0.28 EUR |
AON7400A_2C1 |
Hersteller: Alpha & Omega Semiconductor
AON7400A_2C1
AON7400A_2C1
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.20 EUR |
AON7401 |
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Hersteller: ALPHA&OMEGA
Transistor P-Channel MOSFET; 30V; 25V; 19mOhm; 35A; 29W; -55°C ~ 150°C; AON7401 TAON7401
Anzahl je Verpackung: 5 Stücke
Transistor P-Channel MOSFET; 30V; 25V; 19mOhm; 35A; 29W; -55°C ~ 150°C; AON7401 TAON7401
Anzahl je Verpackung: 5 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 2.41 EUR |
AON7403 |
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Hersteller: ALPHA&OMEGA
Transistor P-Channel MOSFET; 30V; 25V; 36mOhm; 29A; 25W; -55°C ~ 150°C; AON7403 TAON7403
Anzahl je Verpackung: 10 Stücke
Transistor P-Channel MOSFET; 30V; 25V; 36mOhm; 29A; 25W; -55°C ~ 150°C; AON7403 TAON7403
Anzahl je Verpackung: 10 Stücke
auf Bestellung 126 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 1.64 EUR |
AON7404 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 20A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V
Description: MOSFET N-CH 20V 20A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.52 EUR |
AON7404 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 20A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V
Description: MOSFET N-CH 20V 20A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V
auf Bestellung 8815 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 2.16 EUR |
13+ | 1.36 EUR |
100+ | 0.90 EUR |
500+ | 0.70 EUR |
1000+ | 0.64 EUR |
2000+ | 0.58 EUR |
AON7404 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 20V 40A 8-Pin DFN-A EP
Trans MOSFET N-CH 20V 40A 8-Pin DFN-A EP
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.43 EUR |
AON7404 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 20V 40A 8-Pin DFN-A EP
Trans MOSFET N-CH 20V 40A 8-Pin DFN-A EP
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.51 EUR |
AON7404G |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 20A/20A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 4.5V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
Description: MOSFET N-CH 20V 20A/20A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 4.5V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
auf Bestellung 1784 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 1.41 EUR |
21+ | 0.88 EUR |
100+ | 0.57 EUR |
500+ | 0.43 EUR |
1000+ | 0.39 EUR |
AON7406 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 6W; DFN3x3A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Power dissipation: 6W
Case: DFN3x3A
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 6W; DFN3x3A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Power dissipation: 6W
Case: DFN3x3A
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhancement
auf Bestellung 5426 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
311+ | 0.23 EUR |
394+ | 0.18 EUR |
417+ | 0.17 EUR |
5000+ | 0.16 EUR |
AON7406 |
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Hersteller: Allegro
Transistor N-Channel MOSFET; 30V; 20V; 24mOhm; 25A; 15,5W; -55°C ~ 150°C; AON7406 TAON7406
Anzahl je Verpackung: 50 Stücke
Transistor N-Channel MOSFET; 30V; 20V; 24mOhm; 25A; 15,5W; -55°C ~ 150°C; AON7406 TAON7406
Anzahl je Verpackung: 50 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 0.61 EUR |
AON7406 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 6W; DFN3x3A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Power dissipation: 6W
Case: DFN3x3A
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 6W; DFN3x3A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Power dissipation: 6W
Case: DFN3x3A
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5426 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
311+ | 0.23 EUR |
394+ | 0.18 EUR |
417+ | 0.17 EUR |
5000+ | 0.16 EUR |
AON7406 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 9A/25A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta), 15.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 15 V
Description: MOSFET N-CH 30V 9A/25A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta), 15.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 15 V
auf Bestellung 8674 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 0.99 EUR |
29+ | 0.61 EUR |
100+ | 0.39 EUR |
500+ | 0.29 EUR |
1000+ | 0.26 EUR |
2000+ | 0.24 EUR |
AON7407 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -29A; 12W; DFN3x3 EP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -29A
Power dissipation: 12W
Case: DFN3x3 EP
Gate-source voltage: ±8V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -29A; 12W; DFN3x3 EP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -29A
Power dissipation: 12W
Case: DFN3x3 EP
Gate-source voltage: ±8V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.11 EUR |
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