Suchergebnisse für "F3808" : 43
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Mindestbestellmenge: 159
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Mindestbestellmenge: 31
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 31
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 20
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 20
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 20
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 4
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 18
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 18
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 4
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
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IRF3808PBF Produktcode: 33009
zu Favoriten hinzufügen
Lieblingsprodukt
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IR |
![]() ![]() Gehäuse: TO-220 Uds,V: 75 Idd,A: 140 Rds(on), Ohm: 01.07.2000 Ciss, pF/Qg, nC: 5310/150 JHGF: THT |
auf Bestellung 74 Stück: Lieferzeit 21-28 Tag (e) |
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AUIRF3808 | International Rectifier |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1792 Stücke: Lieferzeit 10-14 Tag (e) |
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DF38086RLP10V | Renesas |
![]() Packaging: Bulk Package / Case: 85-TFLGA Mounting Type: Surface Mount Speed: 10MHz Program Memory Size: 52KB (52K x 8) RAM Size: 2K x 8 Operating Temperature: -20°C ~ 75°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: H8/300H Data Converters: A/D 3x10b, 2x14bSAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I2C, IrDA, SCI Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 85-TFLGA (7x7) Part Status: Obsolete Number of I/O: 55 DigiKey Programmable: Not Verified |
auf Bestellung 368 Stücke: Lieferzeit 10-14 Tag (e) |
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DF38086RLP10WV | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 85-TFLGA Mounting Type: Surface Mount Speed: 10MHz Program Memory Size: 52KB (52K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: H8/300H Data Converters: A/D 3x10b, 2x14b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I2C, IrDA, SCI Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 85-TFLGA (7x7) Part Status: Obsolete Number of I/O: 55 DigiKey Programmable: Not Verified |
auf Bestellung 832 Stücke: Lieferzeit 10-14 Tag (e) |
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DF38086RW10WV | Renesas |
![]() Packaging: Bulk Package / Case: 80-TQFP Mounting Type: Surface Mount Speed: 10MHz Program Memory Size: 52KB (52K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: H8/300H Data Converters: A/D 3x10b, 2x14bSAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I2C, IrDA, SCI Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-TQFP (12x12) Part Status: Obsolete Number of I/O: 55 DigiKey Programmable: Not Verified |
auf Bestellung 379 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF3808-ML | MOSLEADER |
Transistor N-Channel MOSFET; 80V; 20V; 4.5mOhm; 130A; 192W; -55°C ~ 150°C; Equivalent: IRF3808; SP001563250; IRF3808-ML MOSLEADER TIRF3808 MOS Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF3808PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 140A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube Gate charge: 150nC |
auf Bestellung 626 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3808PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 140A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube Gate charge: 150nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 626 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF3808PBF | Infineon Technologies |
![]() ![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 1233 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF3808PBF | Infineon Technologies |
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auf Bestellung 321 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF3808SPBF | IR |
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auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3808STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 75A Pulsed drain current: 550A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 497 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3808STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 75A Pulsed drain current: 550A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 497 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF3808STRLPBF | Infineon Technologies |
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auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF3808STRLPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 91 Stücke: Lieferzeit 10-14 Tag (e) |
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ATF-38086-TR1 | HP | 02+; |
auf Bestellung 1100 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRF3808/PBF | IR |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRF3808L | IR | TO-262 |
auf Bestellung 1349 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRF3808STRLPBF | International Rectifier Corporation |
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auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
Транзистор польовий IRF3808PBF 140A 75V N-ch TO-220 |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF3808S Produktcode: 48224
zu Favoriten hinzufügen
Lieblingsprodukt
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Transistoren > MOSFET N-CH ZCODE: 8541290090 |
Produkt ist nicht verfügbar
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Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRF3808SPBF Produktcode: 129658
zu Favoriten hinzufügen
Lieblingsprodukt
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Produkt ist nicht verfügbar
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Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRF3808STRLPBF Produktcode: 148871
zu Favoriten hinzufügen
Lieblingsprodukt
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Produkt ist nicht verfügbar
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Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
59112-F38-08-120LF | Amphenol ICC (FCI) |
![]() Packaging: Bag Color: Black Mounting Type: Through Hole Pitch: 0.079" (2.00mm) Row Spacing: 0.079" (2.00mm) Termination: Solder Contact Finish - Post (Mating): Gold Contact Finish Thickness - Post (Mating): 8.00µin (0.203µm) Part Status: Active Number of Rows: 2 Number of Positions: 16 Length - Overall Pin: 0.752" (19.100mm) Length - Post (Mating): 0.181" (4.597mm) Length - Stack Height: 0.472" (11.989mm) Length - Tail: 0.098" (2.500mm) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
59202-F38-08-120LF | Amphenol ICC (FCI) |
![]() Packaging: Bag Color: Black Mounting Type: Surface Mount Pitch: 0.079" (2.00mm) Row Spacing: 0.079" (2.00mm) Termination: Solder Contact Finish - Post (Mating): Gold Contact Finish Thickness - Post (Mating): 8.00µin (0.203µm) Part Status: Active Number of Rows: 2 Number of Positions: 16 Length - Overall Pin: 0.685" (17.400mm) Length - Post (Mating): 0.213" (5.400mm) Length - Stack Height: 0.472" (11.989mm) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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AUIRF3808S | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DF38086RH10V | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 80-BQFP Mounting Type: Surface Mount Speed: 10MHz Program Memory Size: 52KB (52K x 8) RAM Size: 2K x 8 Operating Temperature: -20°C ~ 75°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: H8/300H Data Converters: A/D 3x10b, 2x14b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Connectivity: I2C, IrDA, SCI Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-QFP (14x14) Part Status: Obsolete Number of I/O: 55 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DF38086RH4V | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 80-BQFP Mounting Type: Surface Mount Speed: 4MHz Program Memory Size: 52KB (52K x 8) RAM Size: 2K x 8 Operating Temperature: -20°C ~ 75°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: H8/300H Data Converters: A/D 3x10b, 2x14b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I2C, IrDA, SCI Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-QFP (14x14) Part Status: Obsolete Number of I/O: 55 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DF38086RLP4V | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 85-TFLGA Mounting Type: Surface Mount Speed: 4MHz Program Memory Size: 52KB (52K x 8) RAM Size: 2K x 8 Operating Temperature: -20°C ~ 75°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: H8/300H Data Converters: A/D 3x10b, 2x14b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I2C, IrDA, SCI Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 85-TFLGA (7x7) Part Status: Obsolete Number of I/O: 55 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DF38086RW10V | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 80-TQFP Mounting Type: Surface Mount Speed: 10MHz Program Memory Size: 52KB (52K x 8) RAM Size: 2K x 8 Operating Temperature: -20°C ~ 75°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: H8/300H Data Converters: A/D 3x10b, 2x14b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Connectivity: I2C, IrDA, SCI Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-TQFP (12x12) Part Status: Obsolete Number of I/O: 55 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DF38086RW10WV | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 80-TQFP Mounting Type: Surface Mount Speed: 10MHz Program Memory Size: 52KB (52K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: H8/300H Data Converters: A/D 3x10b, 2x14b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Connectivity: I2C, IrDA, SCI Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-TQFP (12x12) Number of I/O: 55 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DF38086RW4V | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 80-TQFP Mounting Type: Surface Mount Speed: 4MHz Program Memory Size: 52KB (52K x 8) RAM Size: 2K x 8 Operating Temperature: -20°C ~ 75°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: H8/300H Data Converters: A/D 3x10b, 2x14b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I2C, IrDA, SCI Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-TQFP (12x12) Part Status: Obsolete Number of I/O: 55 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF3808LPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF3808SPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF3808STRLPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IRF3808STRRPBF | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IRF3808STRRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
UPD70F3808GB-GAH-AX | Renesas |
UPD70F3808GB-GAH-AX NECHIEMCUBRC Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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V0603MHS03H | Littelfuse Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Mounting Type: Surface Mount, MLCV Operating Temperature: -55°C ~ 125°C (TA) Energy: 0.005J Part Status: Obsolete Number of Circuits: 1 Maximum AC Volts: 30 V Maximum DC Volts: 42 V Capacitance @ Frequency: 3 pF @ 1 MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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V0603MHS03H | Littelfuse Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Mounting Type: Surface Mount, MLCV Operating Temperature: -55°C ~ 125°C (TA) Energy: 0.005J Part Status: Obsolete Number of Circuits: 1 Maximum AC Volts: 30 V Maximum DC Volts: 42 V Capacitance @ Frequency: 3 pF @ 1 MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IRF3808PBF Produktcode: 33009
zu Favoriten hinzufügen
Lieblingsprodukt
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Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 75
Idd,A: 140
Rds(on), Ohm: 01.07.2000
Ciss, pF/Qg, nC: 5310/150
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 75
Idd,A: 140
Rds(on), Ohm: 01.07.2000
Ciss, pF/Qg, nC: 5310/150
JHGF: THT
auf Bestellung 74 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis |
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1+ | 1.68 EUR |
AUIRF3808 |
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Hersteller: International Rectifier
Description: AUTOMOTIVE HEXFET N CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Grade: Automotive
Qualification: AEC-Q101
Description: AUTOMOTIVE HEXFET N CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1792 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
159+ | 2.86 EUR |
DF38086RLP10V |
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Hersteller: Renesas
Description: IC MCU 16BIT 52KB FLASH 85TFLGA
Packaging: Bulk
Package / Case: 85-TFLGA
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14bSAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 85-TFLGA (7x7)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 52KB FLASH 85TFLGA
Packaging: Bulk
Package / Case: 85-TFLGA
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14bSAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 85-TFLGA (7x7)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
auf Bestellung 368 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
31+ | 15.11 EUR |
DF38086RLP10WV |
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Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 52KB FLASH 85TFLGA
Packaging: Tray
Package / Case: 85-TFLGA
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 85-TFLGA (7x7)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 52KB FLASH 85TFLGA
Packaging: Tray
Package / Case: 85-TFLGA
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 85-TFLGA (7x7)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
auf Bestellung 832 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 18.74 EUR |
10+ | 17.22 EUR |
25+ | 16.5 EUR |
80+ | 14.54 EUR |
230+ | 13.83 EUR |
440+ | 12.93 EUR |
DF38086RW10WV |
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Hersteller: Renesas
Description: IC MCU 16BIT 52KB FLASH 80TQFP
Packaging: Bulk
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14bSAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 52KB FLASH 80TQFP
Packaging: Bulk
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14bSAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
auf Bestellung 379 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
31+ | 15.11 EUR |
IRF3808-ML |
Hersteller: MOSLEADER
Transistor N-Channel MOSFET; 80V; 20V; 4.5mOhm; 130A; 192W; -55°C ~ 150°C; Equivalent: IRF3808; SP001563250; IRF3808-ML MOSLEADER TIRF3808 MOS
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 80V; 20V; 4.5mOhm; 130A; 192W; -55°C ~ 150°C; Equivalent: IRF3808; SP001563250; IRF3808-ML MOSLEADER TIRF3808 MOS
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 2.45 EUR |
IRF3808PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 150nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 150nC
auf Bestellung 626 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.66 EUR |
51+ | 1.42 EUR |
54+ | 1.34 EUR |
IRF3808PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 150nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 150nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 626 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.66 EUR |
51+ | 1.42 EUR |
54+ | 1.34 EUR |
2000+ | 1.33 EUR |
IRF3808PBF | ![]() |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 75V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 1233 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.58 EUR |
50+ | 2.41 EUR |
100+ | 2.29 EUR |
500+ | 1.86 EUR |
1000+ | 1.72 EUR |
IRF3808PBF | ![]() |
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Hersteller: Infineon Technologies
MOSFETs MOSFT 75V 140A 7mOhm 150nC
MOSFETs MOSFT 75V 140A 7mOhm 150nC
auf Bestellung 321 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 4.68 EUR |
10+ | 4.58 EUR |
25+ | 2.55 EUR |
100+ | 2.41 EUR |
500+ | 1.95 EUR |
1000+ | 1.81 EUR |
IRF3808SPBF |
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Hersteller: IR
Транз. Пол. БМ N-HEXFET D2PAK Udss=75V; Id=140A; Pdmax=330W; Rds=0,007 Ohm
Транз. Пол. БМ N-HEXFET D2PAK Udss=75V; Id=140A; Pdmax=330W; Rds=0,007 Ohm
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 11 EUR |
IRF3808STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 550A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 550A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 497 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.2 EUR |
43+ | 1.69 EUR |
45+ | 1.6 EUR |
IRF3808STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 550A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 550A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 497 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.2 EUR |
43+ | 1.69 EUR |
45+ | 1.6 EUR |
800+ | 1.54 EUR |
IRF3808STRLPBF |
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Hersteller: Infineon Technologies
MOSFETs MOSFT 75V 105A 7mOhm 150nC
MOSFETs MOSFT 75V 105A 7mOhm 150nC
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 5.61 EUR |
10+ | 4.05 EUR |
100+ | 2.9 EUR |
250+ | 2.87 EUR |
500+ | 2.68 EUR |
800+ | 2.22 EUR |
IRF3808STRLPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.4 EUR |
10+ | 3.9 EUR |
ATF-38086-TR1 |
Hersteller: HP
02+;
02+;
auf Bestellung 1100 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IRF3808/PBF |
Hersteller: IR
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IRF3808L |
Hersteller: IR
TO-262
TO-262
auf Bestellung 1349 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IRF3808STRLPBF |
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Hersteller: International Rectifier Corporation
IRF3808SPBF MOSFET N-CH 75V 106A D2PAK
IRF3808SPBF MOSFET N-CH 75V 106A D2PAK
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
Транзистор польовий IRF3808PBF 140A 75V N-ch TO-220 |
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IRF3808S Produktcode: 48224
zu Favoriten hinzufügen
Lieblingsprodukt
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Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF3808SPBF Produktcode: 129658
zu Favoriten hinzufügen
Lieblingsprodukt
|
![]() |
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF3808STRLPBF Produktcode: 148871
zu Favoriten hinzufügen
Lieblingsprodukt
|
![]() |
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
59112-F38-08-120LF |
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Hersteller: Amphenol ICC (FCI)
Description: CONN HDR STACK
Packaging: Bag
Color: Black
Mounting Type: Through Hole
Pitch: 0.079" (2.00mm)
Row Spacing: 0.079" (2.00mm)
Termination: Solder
Contact Finish - Post (Mating): Gold
Contact Finish Thickness - Post (Mating): 8.00µin (0.203µm)
Part Status: Active
Number of Rows: 2
Number of Positions: 16
Length - Overall Pin: 0.752" (19.100mm)
Length - Post (Mating): 0.181" (4.597mm)
Length - Stack Height: 0.472" (11.989mm)
Length - Tail: 0.098" (2.500mm)
Description: CONN HDR STACK
Packaging: Bag
Color: Black
Mounting Type: Through Hole
Pitch: 0.079" (2.00mm)
Row Spacing: 0.079" (2.00mm)
Termination: Solder
Contact Finish - Post (Mating): Gold
Contact Finish Thickness - Post (Mating): 8.00µin (0.203µm)
Part Status: Active
Number of Rows: 2
Number of Positions: 16
Length - Overall Pin: 0.752" (19.100mm)
Length - Post (Mating): 0.181" (4.597mm)
Length - Stack Height: 0.472" (11.989mm)
Length - Tail: 0.098" (2.500mm)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
59202-F38-08-120LF |
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Hersteller: Amphenol ICC (FCI)
Description: CONN HDR STACK SMD
Packaging: Bag
Color: Black
Mounting Type: Surface Mount
Pitch: 0.079" (2.00mm)
Row Spacing: 0.079" (2.00mm)
Termination: Solder
Contact Finish - Post (Mating): Gold
Contact Finish Thickness - Post (Mating): 8.00µin (0.203µm)
Part Status: Active
Number of Rows: 2
Number of Positions: 16
Length - Overall Pin: 0.685" (17.400mm)
Length - Post (Mating): 0.213" (5.400mm)
Length - Stack Height: 0.472" (11.989mm)
Description: CONN HDR STACK SMD
Packaging: Bag
Color: Black
Mounting Type: Surface Mount
Pitch: 0.079" (2.00mm)
Row Spacing: 0.079" (2.00mm)
Termination: Solder
Contact Finish - Post (Mating): Gold
Contact Finish Thickness - Post (Mating): 8.00µin (0.203µm)
Part Status: Active
Number of Rows: 2
Number of Positions: 16
Length - Overall Pin: 0.685" (17.400mm)
Length - Post (Mating): 0.213" (5.400mm)
Length - Stack Height: 0.472" (11.989mm)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRF3808S |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DF38086RH10V |
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Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 52KB FLASH 80QFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x14)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 52KB FLASH 80QFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x14)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
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DF38086RH4V |
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Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 52KB FLASH 80QFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 4MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x14)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 52KB FLASH 80QFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 4MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x14)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
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DF38086RLP4V |
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Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 52KB FLASH 85TFLGA
Packaging: Tray
Package / Case: 85-TFLGA
Mounting Type: Surface Mount
Speed: 4MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 85-TFLGA (7x7)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 52KB FLASH 85TFLGA
Packaging: Tray
Package / Case: 85-TFLGA
Mounting Type: Surface Mount
Speed: 4MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 85-TFLGA (7x7)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
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DF38086RW10V |
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Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 52KB FLASH 80TQFP
Packaging: Tray
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 52KB FLASH 80TQFP
Packaging: Tray
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
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DF38086RW10WV |
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Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 52KB FLASH 80TQFP
Packaging: Tray
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 52KB FLASH 80TQFP
Packaging: Tray
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Number of I/O: 55
DigiKey Programmable: Not Verified
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DF38086RW4V |
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Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 52KB FLASH 80TQFP
Packaging: Tray
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 4MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 52KB FLASH 80TQFP
Packaging: Tray
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 4MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified
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IRF3808LPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 106A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 75V 106A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRF3808SPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
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IRF3808STRLPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRF3808STRRPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRF3808STRRPBF SMD N channel transistors
IRF3808STRRPBF SMD N channel transistors
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IRF3808STRRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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V0603MHS03H |
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Hersteller: Littelfuse Inc.
Description: VARISTOR 135V 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount, MLCV
Operating Temperature: -55°C ~ 125°C (TA)
Energy: 0.005J
Part Status: Obsolete
Number of Circuits: 1
Maximum AC Volts: 30 V
Maximum DC Volts: 42 V
Capacitance @ Frequency: 3 pF @ 1 MHz
Description: VARISTOR 135V 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount, MLCV
Operating Temperature: -55°C ~ 125°C (TA)
Energy: 0.005J
Part Status: Obsolete
Number of Circuits: 1
Maximum AC Volts: 30 V
Maximum DC Volts: 42 V
Capacitance @ Frequency: 3 pF @ 1 MHz
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V0603MHS03H |
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Hersteller: Littelfuse Inc.
Description: VARISTOR 135V 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount, MLCV
Operating Temperature: -55°C ~ 125°C (TA)
Energy: 0.005J
Part Status: Obsolete
Number of Circuits: 1
Maximum AC Volts: 30 V
Maximum DC Volts: 42 V
Capacitance @ Frequency: 3 pF @ 1 MHz
Description: VARISTOR 135V 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount, MLCV
Operating Temperature: -55°C ~ 125°C (TA)
Energy: 0.005J
Part Status: Obsolete
Number of Circuits: 1
Maximum AC Volts: 30 V
Maximum DC Volts: 42 V
Capacitance @ Frequency: 3 pF @ 1 MHz
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