Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 75
Idd,A: 140
Rds(on), Ohm: 01.07.2000
Ciss, pF/Qg, nC: 5310/150
JHGF: THT

Hersteller: International Rectifier
Description: AUTOMOTIVE HEXFET N CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Active
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Qualification: AEC-Q101

Hersteller: Renesas
Description: IC MCU 16BIT 52KB FLASH 85TFLGA
Packaging: Bulk
Package / Case: 85-TFLGA
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14bSAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 85-TFLGA (7x7)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified

Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 52KB FLASH 85TFLGA
Packaging: Tray
Package / Case: 85-TFLGA
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 85-TFLGA (7x7)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified

Hersteller: Renesas
Description: IC MCU 16BIT 52KB FLASH 80TQFP
Packaging: Bulk
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14bSAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified

Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Gate-source voltage: ±20V
On-state resistance: 7mΩ

Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Anzahl je Verpackung: 1 Stücke

Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25

Hersteller: Infineon Technologies
MOSFETs MOSFT 75V 140A 7mOhm 150nC

Hersteller: IR
Транз. Пол. БМ N-HEXFET D2PAK Udss=75V; Id=140A; Pdmax=330W; Rds=0,007 Ohm

Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 550A
Gate-source voltage: ±20V
On-state resistance: 7mΩ

Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 550A
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Anzahl je Verpackung: 1 Stücke

Hersteller: Infineon Technologies
MOSFETs MOSFT 75V 105A 7mOhm 150nC

Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25

Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25

Hersteller: HP
02+;

Hersteller: IR

Hersteller: IR
TO-262

Transistoren > MOSFET N-CH
ZCODE: 8541290090

Transistoren > MOSFET N-CH

Transistoren > MOSFET N-CH

Hersteller: Amphenol ICC (FCI)
Description: CONN HDR STACK
Packaging: Bag
Color: Black
Mounting Type: Through Hole
Pitch: 0.079" (2.00mm)
Row Spacing: 0.079" (2.000mm)
Termination: Solder
Contact Finish - Post (Mating): Gold
Contact Finish Thickness - Post (Mating): 8.00µin (0.203µm)
Part Status: Active
Number of Rows: 2
Number of Positions: 16
Length - Overall Pin: 0.752" (19.100mm)
Length - Post (Mating): 0.181" (4.597mm)
Length - Stack Height: 0.472" (11.989mm)
Length - Tail: 0.098" (2.50mm)

Hersteller: Amphenol ICC (FCI)
Description: CONN HDR STACK SMD
Packaging: Bag
Color: Black
Mounting Type: Surface Mount
Pitch: 0.079" (2.00mm)
Row Spacing: 0.079" (2.000mm)
Termination: Solder
Contact Finish - Post (Mating): Gold
Contact Finish Thickness - Post (Mating): 8.00µin (0.203µm)
Part Status: Active
Number of Rows: 2
Number of Positions: 16
Length - Overall Pin: 0.685" (17.400mm)
Length - Post (Mating): 0.213" (5.400mm)
Length - Stack Height: 0.472" (11.989mm)

Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Qualification: AEC-Q101

Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 52KB FLASH 80QFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x14)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified

Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 52KB FLASH 80QFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 4MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x14)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified

Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 52KB FLASH 85TFLGA
Packaging: Tray
Package / Case: 85-TFLGA
Mounting Type: Surface Mount
Speed: 4MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 85-TFLGA (7x7)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified

Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 52KB FLASH 80TQFP
Packaging: Tray
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified

Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 52KB FLASH 80TQFP
Packaging: Tray
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Number of I/O: 55
DigiKey Programmable: Not Verified

Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 52KB FLASH 80TQFP
Packaging: Tray
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 4MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: H8/300H
Data Converters: A/D 3x10b, 2x14b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, SCI
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Obsolete
Number of I/O: 55
DigiKey Programmable: Not Verified

Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 106A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25

Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V

Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 106A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 106A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement

Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 106A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 106A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke

Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25

Hersteller: Renesas
UPD70F3808GB-GAH-AX NECHIEMCUBRC
Anzahl je Verpackung: 300 Stücke

Hersteller: Littelfuse Inc.
Description: VARISTOR 135V 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount, MLCV
Operating Temperature: -55°C ~ 125°C (TA)
Energy: 0.005J
Part Status: Obsolete
Number of Circuits: 1
Maximum AC Volts: 30 V
Maximum DC Volts: 42 V
Capacitance @ Frequency: 3 pF @ 1 MHz

Hersteller: Littelfuse Inc.
Description: VARISTOR 135V 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount, MLCV
Operating Temperature: -55°C ~ 125°C (TA)
Energy: 0.005J
Part Status: Obsolete
Number of Circuits: 1
Maximum AC Volts: 30 V
Maximum DC Volts: 42 V
Capacitance @ Frequency: 3 pF @ 1 MHz