Hersteller: IR
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Kollektor-Emitter-Spannung Vces, V: 600 V
Sättigungsspannung Vce, V: 2,3 V
Kollektorstrom Ic bei 25°C, A: 55 A
Kollektorstrom Ic bei 100°C, A: 27 A
Verlustleistung Pd bei 25°C, W: 200 W

Hersteller: CHIPNOBO
Transistor IGBT ; 900V; 20V; 60A; 120A; 5,0V~6,0V; 315nC; -40°C~175°C; Equivalent: IRG4PF50W; SP001533582; IRG4PF50W-CN CHIPNOBO TIRG4pf50w CNB
Anzahl je Verpackung: 5 Stücke

Hersteller: IR
TO-247

Transistoren > Transistoren IGBT, Leistungsmodule

Hersteller: China
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Kollektor-Emitter-Spannung Vces, V: 900 V
Sättigungsspannung Vce, V: 2,25 V
Kollektorstrom Ic bei 25°C, A: 51 A
Kollektorstrom Ic bei 100°C, A: 28 A
Verlustleistung Pd bei 25°C, W: 200 W

Hersteller: Infineon Technologies
Description: IGBT 900V 51A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 50ns/110ns
Switching Energy: 2.63mJ (on), 1.34mJ (off)
Test Condition: 720V, 28A, 5Ohm, 15V
Gate Charge: 160 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 204 A
Power - Max: 200 W

Hersteller: Infineon Technologies
Description: IGBT 900V 51A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 71ns/150ns
Switching Energy: 2.63mJ (on), 1.34mJ (off)
Test Condition: 720V, 28A, 5Ohm, 15V
Gate Charge: 160 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 204 A
Power - Max: 200 W

Hersteller: Infineon Technologies
Description: IGBT 900V 51A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 29ns/110ns
Switching Energy: 190µJ (on), 1.06mJ (off)
Test Condition: 720V, 28A, 5Ohm, 15V
Gate Charge: 160 nC
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 204 A
Power - Max: 200 W

Hersteller: International Rectifier
(IGBT,N-CH,900V,51A,200W,TO-247AC) Транзистори

Hersteller: International Rectifier
(IGBT,N-CH,900V,28A,TO-247AC) Транзистори

Hersteller: Infineon
(IGBT, N-CH, 900V,51A,TO-247AC) Транзистори

Hersteller: International Rectifier/Infineon
Транзистор... Транзистори Корпус: xxx Од. вим: шт
Anzahl je Verpackung: 25 Stücke

Hersteller: International Rectifier
IGBT,N-CH,900V,51A,200W,TO-247AC,Pb Free Транзистори

Hersteller: Infineon
Транз. IGBT WARP TO247AC Uces=900V; Ic=51A; Ic=28A(100°C); Pdmax=200W IRG4PF50WPBF.pdf Транзистори IGBT