Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SOT-223
Drain-Source-Spannung Uds, V: 55 В
Drain-Strom Idd, A: 3 A
Durchlasswiderstand Rds(on), Ohm: 0,065 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 510/10,4
Bemerkung: Logikpegel-Ansteuerung
Montage: SMD

Hersteller: Infineon
Transistor N-Channel MOSFET; 55V; 16V; 100mOhm; 4,4A; 2,1W; -55°C ~ 150°C; Equivalent: IRLL024NTR; IRLL024N smd TIRLL024
Anzahl je Verpackung: 50 Stücke

Hersteller: Infineon
Transistor N-Channel MOSFET; 55V; 16V; 100mOhm; 4,4A; 2,1W; -55°C ~ 150°C; Equivalent: IRLL024NTR; IRLL024N smd TIRLL024
Anzahl je Verpackung: 50 Stücke

Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level

Hersteller: Infineon Technologies
MOSFETs MOSFT 55V 4.4A 65mOhm 10.4nC LogLvl

Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25

Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R

Hersteller: INFINEON
Description: INFINEON - IRLL024NTRPBF - Leistungs-MOSFET, n-Kanal, 55 V, 3.1 A, 0.065 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 55V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2V
Verlustleistung: 1W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-223
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.065ohm

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R

Hersteller: INFINEON
Description: INFINEON - IRLL024NTRPBF - Leistungs-MOSFET, n-Kanal, 55 V, 3.1 A, 0.065 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 55V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2V
Verlustleistung: 1W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-223
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.065ohm

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R

Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Qualification: AEC-Q101

Hersteller: International Rectifier
Description: AUTOMOTIVE POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Qualification: AEC-Q101

Hersteller: STMicroelectronics
MOSFETs N-Ch 60 Volt 4 AMP

Hersteller: Diodes Incorporated
MOSFETs 60V 3.8A N-Channel MOSFET

Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SOT-223
Bemerkung: Logikpegel-Ansteuerung
Montage: SMD

Transistoren > MOSFET N-CH

Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V

Hersteller: International Rectifier/Infineon
N-канальний ПТ, Udss, В = 55, Id = 3,1 А, Ptot, Вт = 1, Тип монт. = smd, Ciss, пФ @ Uds, В = 510 @ 25, Qg, нКл = 15,6 @ 5 В, Rds = 65 мОм @ 3,1 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 2 В @ 250 мкА,... Транзистори Корпус: SOT-223 Од. вим: шт
Anzahl je Verpackung: 80 Stücke

Hersteller: International Rectifier
SOT-223 Транзистори

Hersteller: International Rectifier
SOT223 Транзистори

Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 3.1A SOT-223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Qualification: AEC-Q101

Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Qualification: AEC-Q101

Hersteller: Infineon
Транз. Пол. ММ MOSFETs MOSFT 55V 4.4A 65mOhm 10.4nC LogLvl SOT-223-4 Транзистори польові

Hersteller: Infineon
MOSFET N-CH 55V 3.1A SOT-224 Діоди та діодні збірки