Hersteller: IR
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: SOT-23
Drain-Source-Spannung Uds, V: 20 V
Drain-Strom Id, A: 3,7 A
Durchlasswiderstand Rds(on), Ohm: 0,065 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 633/8
Anmerkung: Logic-Level-Ansteuerung
Montage: SMD
ZCODE: 8541 21 00 90

Hersteller: KEXIN
Transistor P-Channel MOSFET; 20V; 12V; 75mOhm; 3,2A; 1,7W; -55°C~150°C; IRLML6402 SOT23 KEXIN TIRLML6402 KEX
Anzahl je Verpackung: 500 Stücke

Hersteller: HUASHUO
Transistor P-Channel MOSFET; -20V; -/+12V; 45mOhm; -3,9A; 1,31W; -55°C~150°C; Substitute: IRLML6402; SKML6402; IRLML6402TR; IRLML6402 TIRLML6402 HUA
Anzahl je Verpackung: 100 Stücke

Hersteller: SLKOR
Transistor P-Channel MOSFET; 20V; 12V; 135mOhm; 3,7A; 1,3W; -55°C ~ 150°C; Equivalent: IRLML6402TR; IRLML6402GTR; SP001552740; SP001578888; IRLML6402 SLKOR TIRLML6402 SLK
Anzahl je Verpackung: 250 Stücke

Hersteller: HUASHUO
Transistor P-Channel MOSFET; -20V; -/+12V; 45mOhm; -3,9A; 1,31W; -55°C~150°C; Substitute: IRLML6402; SKML6402; IRLML6402TR; IRLML6402 TIRLML6402 HUA
Anzahl je Verpackung: 100 Stücke

Hersteller: HXY MOSFET
Transistor P-Channel MOSFET; 20V; 12V; 95mOhm; 3,6A; 1,7W; -55°C ~ 150°C; Equivalent: IRLML6402TR; IRLML6402GTR; SP001552740; SP001578888; IRLML6402 HXY MOSFET TIRLML6402 HXY
Anzahl je Verpackung: 100 Stücke

Hersteller: MLCCBASE
Transistor P-Channel MOSFET; 20V; 12V; 135mOhm; 3,7A; 1,3W; -55°C ~ 150°C; Equivalent: IRLML6402TR; IRLML6402GTR; SP001552740; SP001578888; IRLML6402 MLCCBASE TIRLML6402 MLC
Anzahl je Verpackung: 100 Stücke

Hersteller: GOODWORK
Description: 20V3.7A80m@2.5VSOT-23

Hersteller: KLS
IRLML6402-(SOT-23) IRLML6402TRPBF Micro 3 packa/SOT-23, -20V Single P-Channel HEXFET Power MOSFET Транзистори

Hersteller: VBsemi
Transistor P-Channel MOSFET; 20V; 12V; 80mOhm; 4A; 2,5W; -55°C ~ 150°C; Substitute: IRLML6402 , SKML6402, IRLML6402TR IRLML6402 VBS TIRLML6402 VBS
Anzahl je Verpackung: 500 Stücke

Hersteller: UMW
Transistor P-Channel MOSFET; 20V; 12V; 135mOhm; 3,7A; 1,3W; -55°C ~ 150°C; Equivalent: IRLML6402TR; IRLML6402GTR; SP001552740; SP001578888; IRLML6402 UMW TIRLML6402 UMW
Anzahl je Verpackung: 100 Stücke

Hersteller: UMW
Transistor P-Channel MOSFET; 20V; 12V; 135mOhm; 3,7A; 1,3W; -55°C ~ 150°C; Equivalent: IRLML6402TR; IRLML6402GTR; SP001552740; SP001578888; IRLML6402 UMW TIRLML6402 UMW
Anzahl je Verpackung: 100 Stücke

Hersteller: JSMicro Semiconductor
Transistor P-Channel MOSFET; 30V; 20V; 17mOhm; 13A; 2W; -55°C ~ 150°C; Equivalent: IRLML6402TR; IRLML6402GTR; SP001552740; SP001578888; IRLML6402TR JSMICRO TIRLML6402 JSM
Anzahl je Verpackung: 250 Stücke

Hersteller: INTERNATIONAL RECTIFIER
P-Channel HEXFET, -20V, -3.7A, Micro 3 (SOT-23)

Hersteller: Infineon
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 packa/SOT-23 Транзистори

Hersteller: IR
10+ SOT-23

Hersteller: IR
09+

Hersteller: IR

Hersteller: IR

Hersteller: International Rectifier/Infineon
P-канальний ПТ, Udss, В = 20, Id = 3,7 А, Ptot, Вт = 1,3, Тип монт. = smd, Ciss, пФ @ Uds, В = 633 @ 10, Qg, нКл = 12 @ 250 мкА, Rds = 65 мОм @ 3,7 A, 4,5 В, Tексп, °C = -55...+150, Ugs(th) = 1,2 В @ 250 мкА,... Транзистори Корпус: SOT-23-3 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke

IRLML6402TRPBF Транзисторы HEXFET

Hersteller: IR
08+;

Hersteller: IR
09+ TO-92

Hersteller: kuu semiconductor
Transistor P-MOSFET; 20V; 12V; 135mOhm; 3,7A; 1,3W; -55°C ~ 150°C; Substitute: IRLML6402TR; IRLML6402; KIRLML6402TR; IRLML6402 TIRLML6402 KUU
Anzahl je Verpackung: 500 Stücke

Hersteller: kuu semiconductor
Transistor P-MOSFET; 20V; 12V; 135mOhm; 3,7A; 1,3W; -55°C ~ 150°C; Substitute: IRLML6402TR; IRLML6402; KIRLML6402TR; IRLML6402 TIRLML6402 KUU
Anzahl je Verpackung: 500 Stücke

Hersteller: UMW
Description: 20V 3.7A 1.3W 65MR@4.5V,3.7A 950
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V

Hersteller: UMW
Description: 20V 3.7A 1.3W 65MR@4.5V,3.7A 950
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V

Hersteller: BORN
Transistor P-Channel MOSFET; 20V; 12V; 135mOhm; 3,7A; 1,1W; -55°C ~ 150°C; Equivalent: IRLML6402TR; IRLML6402GTR; SP001552740; SP001578888; BML6402 BORN TIRLML6402 BORN
Anzahl je Verpackung: 100 Stücke

Hersteller: CDIL
MOSFET P-Channel 20V 3.7A SOT-23, аналог IRLML6402TRPBF Транзистори

Hersteller: FUXINSEMI
Transistor P-Channel MOSFET; 20V; 12V; 95mOhm; 3,6A; 1,7W; -55°C~150°C; Similar to: FS2301S; IRLML6402; FS2301S; IRLML2246; IRLML2246TR; FS2301S TFS2301S FUX
Anzahl je Verpackung: 3000 Stücke

Hersteller: MOT
Transistor P-Channel MOSFET; 20V; 12V; 55mOhm; 6A; 1,83W; -55°C ~ 150°C; Substitute: IRLML6402TR; IRLML2244TR; DMP2305U-7; SI2305; FDN304P; MOT2305B2 SOT23 MOT TIRLML6402 MOT
Anzahl je Verpackung: 3000 Stücke

Hersteller: SHIKUES
Transistor P-Channel MOSFET; 20V; 10V; 150mOhm; 3A; Equivalent: IRLML6402TR; IRLML6402GTR; SP001552740; SP001578888; IRLML6402 (SKML6402) SHIKUES TIRLML6402 SHK
Anzahl je Verpackung: 100 Stücke

Hersteller: YY
P-Channel MOSFET -3A -20V 120m? Similar to: IRLML6402; SKML6402; YJL2301C; YJL2301C-F2-0000HF; YJL2301C-YAN; FS2300; IRLML6402TR; AT4P5SP020MSA; IRLML6402 Yangjie TIRLML6402 c
Anzahl je Verpackung: 3000 Stücke

Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 3.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V

Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level

Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 3.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V

Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 3.7A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V

Hersteller: Infineon Technologies
Trans MOSFET P-CH Si 20V 3.7A 3-Pin SOT-23 T/R

Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 3.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V

Hersteller: SLKOR
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 packa/SOT-23 Транзистори

Hersteller: International Rectifier/Infineon
P-канальный ПТ (Vds=20V, Id=3.7A@T=25C, Id=2.2A@T=70C, Rds=0.065 R, P=1.3W, -55 to +150C), упр-е логич. уровнем... Транзистори Корпус: SOT-23 Од. вим: шт
Anzahl je Verpackung: 1000 Stücke

Hersteller: TYS
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 packa/SOT-23 Транзистори

Hersteller: International Rectifier
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 packa/SOT-23 Транзистори

Hersteller: Infineon
Транз. Пол. МП P-HEXFET SOT23 Udss=-20V; Id=-3,5A; Pdmax=1,1W; Rds=0,06 Ohm IRLML6402TRPBF.pdf Транзистори польові