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Foto | Bezeichnung | Hersteller | Beschreibung |
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DN-25C (09670250425-Harting) Produktcode: 57353 |
HARTING |
Steckverbinder, Reihenklemmen > Steckverbindungen Interface (außer USB, SATA) Beschreibung: Gehause fur Kabel 25-x Kontakt. komp.- Steckverbindung, metall- Stecker oder Steckdose: Teile Steckverbinder, Gehause Anzahl, Kontakte: 25 |
verfügbar: 12 Stück
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DN2530N3-G | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 0.2A; 1.6W; TO92 Mounting: THT Kind of channel: depleted Gate-source voltage: ±20V Pulsed drain current: 0.2A Case: TO92 Drain-source voltage: 300V On-state resistance: 12Ω Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Kind of package: bulk |
auf Bestellung 648 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N3-G | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 0.2A; 1.6W; TO92 Mounting: THT Kind of channel: depleted Gate-source voltage: ±20V Pulsed drain current: 0.2A Case: TO92 Drain-source voltage: 300V On-state resistance: 12Ω Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Kind of package: bulk Anzahl je Verpackung: 1 Stücke |
auf Bestellung 648 Stücke: Lieferzeit 7-14 Tag (e) |
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DN2530N3-G | Microchip Technology |
Description: MOSFET N-CH 300V 175MA TO92 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175mA (Tj) Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 740mW (Ta) Supplier Device Package: TO-92 (TO-226) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 16003 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2530N3-G | Microchip Technology | MOSFET 300V 12Ohm |
auf Bestellung 1543 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2530N3-G | Microchip Technology | Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag |
auf Bestellung 3982 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N3-G | MICROCHIP |
Description: MICROCHIP - DN2530N3-G - Leistungs-MOSFET, n-Kanal, 300 V, 175 mA, 12 ohm, TO-92, Durchsteckmontage tariffCode: 85412100 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 300V rohsCompliant: YES Dauer-Drainstrom Id: 175mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: - euEccn: NLR Verlustleistung: 740mW Bauform - Transistor: TO-92 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 0V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 12ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 639 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N3-G | Microchip Technology | Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag |
auf Bestellung 648 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N3-G | Microchip Technology | Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N3-G | Microchip Technology | Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N3-G | Microchip Technology | Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N3-G | Microchip Technology | Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag |
auf Bestellung 828 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N3-G | Microchip Technology | Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag |
auf Bestellung 828 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N8-G | MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 0.2A; 740mW; SOT89-3 Mounting: SMD Kind of channel: depleted Gate-source voltage: ±20V Pulsed drain current: 0.2A Case: SOT89-3 Drain-source voltage: 300V On-state resistance: 12Ω Type of transistor: N-MOSFET Power dissipation: 0.74W Polarisation: unipolar Kind of package: reel; tape |
auf Bestellung 375 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N8-G | MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 0.2A; 740mW; SOT89-3 Mounting: SMD Kind of channel: depleted Gate-source voltage: ±20V Pulsed drain current: 0.2A Case: SOT89-3 Drain-source voltage: 300V On-state resistance: 12Ω Type of transistor: N-MOSFET Power dissipation: 0.74W Polarisation: unipolar Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 375 Stücke: Lieferzeit 7-14 Tag (e) |
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DN2530N8-G | Microchip Technology |
Description: MOSFET N-CH 300V 200MA TO243AA Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 5180 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2530N8-G | Microchip Technology |
Description: MOSFET N-CH 300V 200MA TO243AA Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2530N8-G | Microchip Technology | MOSFET 300V 12Ohm |
auf Bestellung 1574 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2530N8-G | Microchip Technology | Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N8-G | Microchip Technology | Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N8-G | Microchip Technology | Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 375 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N8-G | Microchip Technology | Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2535N3-G | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.15A; 1W; TO92 Mounting: THT Kind of channel: depleted Gate-source voltage: ±20V Pulsed drain current: 0.15A Case: TO92 Drain-source voltage: 350V On-state resistance: 25Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: bulk |
auf Bestellung 391 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2535N3-G | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.15A; 1W; TO92 Mounting: THT Kind of channel: depleted Gate-source voltage: ±20V Pulsed drain current: 0.15A Case: TO92 Drain-source voltage: 350V On-state resistance: 25Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: bulk Anzahl je Verpackung: 1 Stücke |
auf Bestellung 391 Stücke: Lieferzeit 7-14 Tag (e) |
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DN2535N3-G | Microchip Technology |
Description: MOSFET N-CH 350V 120MA TO92 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Tj) Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 1W (Tc) Supplier Device Package: TO-92 (TO-226) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 1786 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2535N3-G | Microchip Technology | MOSFET 350V 25Ohm |
auf Bestellung 996 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2535N3-G | Microchip Technology | Trans MOSFET N-CH Si 350V 0.12A 3-Pin TO-92 Bag |
auf Bestellung 391 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2535N3-G | Microchip Technology | Trans MOSFET N-CH Si 350V 0.12A 3-Pin TO-92 Bag |
auf Bestellung 433 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2535N3-G | Microchip Technology | Trans MOSFET N-CH Si 350V 0.12A 3-Pin TO-92 Bag |
auf Bestellung 993 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2535N3-G | Microchip Technology | Trans MOSFET N-CH Si 350V 0.12A 3-Pin TO-92 Bag |
auf Bestellung 433 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2535N3-G-P003 | Microchip Technology | MOSFET N-Channel MOSFET 350V 0.12A 3P TO-92 |
auf Bestellung 1914 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2535N5-G | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.15A; 15W; TO220 Mounting: THT Kind of channel: depleted Gate-source voltage: ±20V Pulsed drain current: 0.15A Case: TO220 Drain-source voltage: 350V On-state resistance: 25Ω Type of transistor: N-MOSFET Power dissipation: 15W Polarisation: unipolar Kind of package: tube |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2535N5-G | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.15A; 15W; TO220 Mounting: THT Kind of channel: depleted Gate-source voltage: ±20V Pulsed drain current: 0.15A Case: TO220 Drain-source voltage: 350V On-state resistance: 25Ω Type of transistor: N-MOSFET Power dissipation: 15W Polarisation: unipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 48 Stücke: Lieferzeit 7-14 Tag (e) |
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DN2535N5-G | Microchip Technology |
Description: MOSFET N-CH 350V 500MA TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Tj) Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 15W (Tc) Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 145 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2535N5-G | Microchip Technology | MOSFET 350V 25Ohm |
auf Bestellung 538 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2535N5-G | Microchip Technology | Trans MOSFET N-CH Si 350V 0.5A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 550 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2535N5-G | Microchip Technology | Trans MOSFET N-CH Si 350V 0.5A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2540N3-G | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 120mA; Idm: 0.5A; 1W; TO92 Mounting: THT Kind of channel: depleted Gate-source voltage: ±20V Pulsed drain current: 0.5A Case: TO92 Drain-source voltage: 400V Drain current: 0.12A On-state resistance: 25Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: bulk |
auf Bestellung 246 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2540N3-G | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 120mA; Idm: 0.5A; 1W; TO92 Mounting: THT Kind of channel: depleted Gate-source voltage: ±20V Pulsed drain current: 0.5A Case: TO92 Drain-source voltage: 400V Drain current: 0.12A On-state resistance: 25Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: bulk Anzahl je Verpackung: 1 Stücke |
auf Bestellung 246 Stücke: Lieferzeit 7-14 Tag (e) |
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DN2540N3-G | Microchip Technology | MOSFET 400V 25Ohm |
auf Bestellung 3110 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2540N3-G | Microchip Technology | Trans MOSFET N-CH Si 400V 0.12A 3-Pin TO-92 Bag |
auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2540N3-G | Microchip Technology | Trans MOSFET N-CH Si 400V 0.12A 3-Pin TO-92 Bag |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2540N3-G | MICROCHIP |
Description: MICROCHIP - DN2540N3-G - Leistungs-MOSFET, n-Kanal, 400 V, 120 mA, 17 ohm, TO-92, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 400V rohsCompliant: YES Dauer-Drainstrom Id: 120mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: - euEccn: NLR Verlustleistung: 1W Bauform - Transistor: TO-92 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 0V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 17ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 4247 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2540N3-G | Microchip Technology | Trans MOSFET N-CH Si 400V 0.12A 3-Pin TO-92 Bag |
auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2540N3-G | Microchip Technology | Trans MOSFET N-CH Si 400V 0.12A 3-Pin TO-92 Bag |
auf Bestellung 246 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2540N3-G-P003 | Microchip Technology |
Description: MOSFET N-CH 400V 120MA TO92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Tj) Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 1W (Tc) Supplier Device Package: TO-92 (TO-226) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 5856 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2540N3-G-P003 | Microchip Technology | MOSFET N-Channel MOSFET 400V 0.12A 3P TO-92 |
auf Bestellung 2644 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2540N3-G-P003 | Microchip Technology |
Description: MOSFET N-CH 400V 120MA TO92 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Tj) Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 1W (Tc) Supplier Device Package: TO-92 (TO-226) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2540N5-G | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 500mA; Idm: 0.5A; 15W; TO220 Mounting: THT Kind of channel: depleted Gate-source voltage: ±20V Pulsed drain current: 0.5A Case: TO220 Drain-source voltage: 400V Drain current: 0.5A On-state resistance: 25Ω Type of transistor: N-MOSFET Power dissipation: 15W Polarisation: unipolar Kind of package: tube |
auf Bestellung 196 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2540N5-G | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 500mA; Idm: 0.5A; 15W; TO220 Mounting: THT Kind of channel: depleted Gate-source voltage: ±20V Pulsed drain current: 0.5A Case: TO220 Drain-source voltage: 400V Drain current: 0.5A On-state resistance: 25Ω Type of transistor: N-MOSFET Power dissipation: 15W Polarisation: unipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 196 Stücke: Lieferzeit 7-14 Tag (e) |
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DN2540N5-G | Microchip Technology | MOSFET 400V 25Ohm |
auf Bestellung 3124 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2540N5-G | Microchip Technology |
Description: MOSFET N-CH 400V 500MA TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Tj) Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 15W (Tc) Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 417 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2540N5-G | Microchip Technology | Trans MOSFET N-CH Si 400V 0.5A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 247 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2540N5-G | Microchip Technology | Trans MOSFET N-CH Si 400V 0.5A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 2246 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2540N5-G | MICROCHIP |
Description: MICROCHIP - DN2540N5-G - Leistungs-MOSFET, n-Kanal, 400 V, 500 mA, 17 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 400V rohsCompliant: YES Dauer-Drainstrom Id: 500mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: - euEccn: NLR Verlustleistung: 15W Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 0V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 17ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 4114 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2540N5-G | Microchip Technology | Trans MOSFET N-CH Si 400V 0.5A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 196 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2540N5-G | Microchip Technology | Trans MOSFET N-CH Si 400V 0.5A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 247 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2540N5-G | Microchip Technology | Trans MOSFET N-CH Si 400V 0.5A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2540N8-G | MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 170mA; Idm: 0.5A; 1.6W Mounting: SMD Kind of channel: depleted Gate-source voltage: ±20V Pulsed drain current: 0.5A Case: SOT89-3 Drain-source voltage: 400V Drain current: 0.17A On-state resistance: 25Ω Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Kind of package: reel; tape |
auf Bestellung 408 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2540N8-G | MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 170mA; Idm: 0.5A; 1.6W Mounting: SMD Kind of channel: depleted Gate-source voltage: ±20V Pulsed drain current: 0.5A Case: SOT89-3 Drain-source voltage: 400V Drain current: 0.17A On-state resistance: 25Ω Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 408 Stücke: Lieferzeit 7-14 Tag (e) |
|
DN-25C (09670250425-Harting) Produktcode: 57353 |
Hersteller: HARTING
Steckverbinder, Reihenklemmen > Steckverbindungen Interface (außer USB, SATA)
Beschreibung: Gehause fur Kabel 25-x Kontakt. komp.- Steckverbindung, metall-
Stecker oder Steckdose: Teile Steckverbinder, Gehause
Anzahl, Kontakte: 25
Steckverbinder, Reihenklemmen > Steckverbindungen Interface (außer USB, SATA)
Beschreibung: Gehause fur Kabel 25-x Kontakt. komp.- Steckverbindung, metall-
Stecker oder Steckdose: Teile Steckverbinder, Gehause
Anzahl, Kontakte: 25
verfügbar: 12 Stück
Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.08 EUR |
10+ | 2.8 EUR |
DN2530N3-G |
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 0.2A; 1.6W; TO92
Mounting: THT
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.2A
Case: TO92
Drain-source voltage: 300V
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: bulk
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 0.2A; 1.6W; TO92
Mounting: THT
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.2A
Case: TO92
Drain-source voltage: 300V
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: bulk
auf Bestellung 648 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 1 EUR |
75+ | 0.96 EUR |
79+ | 0.92 EUR |
82+ | 0.87 EUR |
88+ | 0.82 EUR |
250+ | 0.79 EUR |
DN2530N3-G |
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 0.2A; 1.6W; TO92
Mounting: THT
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.2A
Case: TO92
Drain-source voltage: 300V
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: bulk
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 0.2A; 1.6W; TO92
Mounting: THT
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.2A
Case: TO92
Drain-source voltage: 300V
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: bulk
Anzahl je Verpackung: 1 Stücke
auf Bestellung 648 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 1 EUR |
75+ | 0.96 EUR |
79+ | 0.92 EUR |
82+ | 0.87 EUR |
88+ | 0.82 EUR |
250+ | 0.79 EUR |
DN2530N3-G |
Hersteller: Microchip Technology
Description: MOSFET N-CH 300V 175MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Description: MOSFET N-CH 300V 175MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 16003 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.3 EUR |
25+ | 1.07 EUR |
100+ | 0.99 EUR |
DN2530N3-G |
Hersteller: Microchip Technology
MOSFET 300V 12Ohm
MOSFET 300V 12Ohm
auf Bestellung 1543 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 1.29 EUR |
25+ | 1.06 EUR |
100+ | 0.98 EUR |
DN2530N3-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag
auf Bestellung 3982 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
154+ | 1.02 EUR |
157+ | 0.96 EUR |
163+ | 0.89 EUR |
DN2530N3-G |
Hersteller: MICROCHIP
Description: MICROCHIP - DN2530N3-G - Leistungs-MOSFET, n-Kanal, 300 V, 175 mA, 12 ohm, TO-92, Durchsteckmontage
tariffCode: 85412100
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 300V
rohsCompliant: YES
Dauer-Drainstrom Id: 175mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: -
euEccn: NLR
Verlustleistung: 740mW
Bauform - Transistor: TO-92
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 0V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 12ohm
SVHC: No SVHC (23-Jan-2024)
Description: MICROCHIP - DN2530N3-G - Leistungs-MOSFET, n-Kanal, 300 V, 175 mA, 12 ohm, TO-92, Durchsteckmontage
tariffCode: 85412100
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 300V
rohsCompliant: YES
Dauer-Drainstrom Id: 175mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: -
euEccn: NLR
Verlustleistung: 740mW
Bauform - Transistor: TO-92
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 0V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 12ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 639 Stücke:
Lieferzeit 14-21 Tag (e)DN2530N3-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag
auf Bestellung 648 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
94+ | 1.67 EUR |
104+ | 1.46 EUR |
250+ | 1.36 EUR |
500+ | 1.27 EUR |
DN2530N3-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
129+ | 1.21 EUR |
156+ | 0.97 EUR |
161+ | 0.9 EUR |
DN2530N3-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
115+ | 1.37 EUR |
250+ | 1.19 EUR |
500+ | 1.11 EUR |
1000+ | 1.03 EUR |
3000+ | 0.93 EUR |
DN2530N3-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
127+ | 1.23 EUR |
139+ | 1.09 EUR |
DN2530N3-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag
auf Bestellung 828 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
137+ | 1.15 EUR |
144+ | 1.05 EUR |
DN2530N3-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag
auf Bestellung 828 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
137+ | 1.15 EUR |
144+ | 1.05 EUR |
DN2530N8-G |
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 0.2A; 740mW; SOT89-3
Mounting: SMD
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.2A
Case: SOT89-3
Drain-source voltage: 300V
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 0.74W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 0.2A; 740mW; SOT89-3
Mounting: SMD
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.2A
Case: SOT89-3
Drain-source voltage: 300V
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 0.74W
Polarisation: unipolar
Kind of package: reel; tape
auf Bestellung 375 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
62+ | 1.16 EUR |
65+ | 1.12 EUR |
75+ | 0.96 EUR |
79+ | 0.92 EUR |
100+ | 0.87 EUR |
DN2530N8-G |
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 0.2A; 740mW; SOT89-3
Mounting: SMD
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.2A
Case: SOT89-3
Drain-source voltage: 300V
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 0.74W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 0.2A; 740mW; SOT89-3
Mounting: SMD
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.2A
Case: SOT89-3
Drain-source voltage: 300V
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 0.74W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 375 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
62+ | 1.16 EUR |
65+ | 1.12 EUR |
75+ | 0.96 EUR |
79+ | 0.92 EUR |
100+ | 0.87 EUR |
DN2530N8-G |
Hersteller: Microchip Technology
Description: MOSFET N-CH 300V 200MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Description: MOSFET N-CH 300V 200MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 5180 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.44 EUR |
25+ | 1.2 EUR |
100+ | 1.07 EUR |
DN2530N8-G |
Hersteller: Microchip Technology
Description: MOSFET N-CH 300V 200MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Description: MOSFET N-CH 300V 200MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 1.07 EUR |
DN2530N8-G |
Hersteller: Microchip Technology
MOSFET 300V 12Ohm
MOSFET 300V 12Ohm
auf Bestellung 1574 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.44 EUR |
25+ | 1.2 EUR |
100+ | 1.06 EUR |
DN2530N8-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R
Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
115+ | 1.37 EUR |
116+ | 1.31 EUR |
120+ | 1.22 EUR |
124+ | 1.13 EUR |
250+ | 1.04 EUR |
500+ | 0.96 EUR |
1000+ | 0.88 EUR |
DN2530N8-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R
Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
115+ | 1.37 EUR |
116+ | 1.31 EUR |
120+ | 1.22 EUR |
124+ | 1.13 EUR |
250+ | 1.04 EUR |
500+ | 0.96 EUR |
1000+ | 0.88 EUR |
DN2530N8-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R
Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R
auf Bestellung 375 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
91+ | 1.72 EUR |
100+ | 1.6 EUR |
250+ | 1.5 EUR |
DN2530N8-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R
Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 1.3 EUR |
DN2535N3-G |
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.15A; 1W; TO92
Mounting: THT
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.15A
Case: TO92
Drain-source voltage: 350V
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: bulk
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.15A; 1W; TO92
Mounting: THT
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.15A
Case: TO92
Drain-source voltage: 350V
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: bulk
auf Bestellung 391 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
59+ | 1.23 EUR |
64+ | 1.13 EUR |
71+ | 1.02 EUR |
73+ | 0.99 EUR |
100+ | 0.94 EUR |
DN2535N3-G |
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.15A; 1W; TO92
Mounting: THT
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.15A
Case: TO92
Drain-source voltage: 350V
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: bulk
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.15A; 1W; TO92
Mounting: THT
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.15A
Case: TO92
Drain-source voltage: 350V
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: bulk
Anzahl je Verpackung: 1 Stücke
auf Bestellung 391 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
59+ | 1.23 EUR |
64+ | 1.13 EUR |
71+ | 1.02 EUR |
73+ | 0.99 EUR |
100+ | 0.94 EUR |
DN2535N3-G |
Hersteller: Microchip Technology
Description: MOSFET N-CH 350V 120MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1W (Tc)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Description: MOSFET N-CH 350V 120MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1W (Tc)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 1786 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.5 EUR |
25+ | 1.27 EUR |
100+ | 1.17 EUR |
DN2535N3-G |
Hersteller: Microchip Technology
MOSFET 350V 25Ohm
MOSFET 350V 25Ohm
auf Bestellung 996 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 1.33 EUR |
10+ | 1.28 EUR |
25+ | 1.09 EUR |
100+ | 1.08 EUR |
DN2535N3-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 350V 0.12A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 350V 0.12A 3-Pin TO-92 Bag
auf Bestellung 391 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
84+ | 1.87 EUR |
100+ | 1.75 EUR |
250+ | 1.63 EUR |
DN2535N3-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 350V 0.12A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 350V 0.12A 3-Pin TO-92 Bag
auf Bestellung 433 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
127+ | 1.24 EUR |
DN2535N3-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 350V 0.12A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 350V 0.12A 3-Pin TO-92 Bag
auf Bestellung 993 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
131+ | 1.2 EUR |
134+ | 1.13 EUR |
139+ | 1.05 EUR |
DN2535N3-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 350V 0.12A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 350V 0.12A 3-Pin TO-92 Bag
auf Bestellung 433 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
127+ | 1.24 EUR |
DN2535N3-G-P003 |
Hersteller: Microchip Technology
MOSFET N-Channel MOSFET 350V 0.12A 3P TO-92
MOSFET N-Channel MOSFET 350V 0.12A 3P TO-92
auf Bestellung 1914 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.62 EUR |
25+ | 1.33 EUR |
100+ | 1.23 EUR |
DN2535N5-G |
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.15A; 15W; TO220
Mounting: THT
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.15A
Case: TO220
Drain-source voltage: 350V
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 15W
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.15A; 15W; TO220
Mounting: THT
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.15A
Case: TO220
Drain-source voltage: 350V
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 15W
Polarisation: unipolar
Kind of package: tube
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 2.47 EUR |
31+ | 2.33 EUR |
DN2535N5-G |
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.15A; 15W; TO220
Mounting: THT
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.15A
Case: TO220
Drain-source voltage: 350V
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 15W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.15A; 15W; TO220
Mounting: THT
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.15A
Case: TO220
Drain-source voltage: 350V
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 15W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 2.47 EUR |
31+ | 2.33 EUR |
100+ | 2.26 EUR |
DN2535N5-G |
Hersteller: Microchip Technology
Description: MOSFET N-CH 350V 500MA TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 15W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Description: MOSFET N-CH 350V 500MA TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 15W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 145 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.78 EUR |
25+ | 2.31 EUR |
100+ | 2.11 EUR |
DN2535N5-G |
Hersteller: Microchip Technology
MOSFET 350V 25Ohm
MOSFET 350V 25Ohm
auf Bestellung 538 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.76 EUR |
25+ | 2.29 EUR |
100+ | 2.09 EUR |
DN2535N5-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 350V 0.5A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH Si 350V 0.5A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 550 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
54+ | 2.9 EUR |
250+ | 2.51 EUR |
500+ | 2.33 EUR |
DN2535N5-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 350V 0.5A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH Si 350V 0.5A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
39+ | 4.09 EUR |
DN2540N3-G |
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 120mA; Idm: 0.5A; 1W; TO92
Mounting: THT
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.5A
Case: TO92
Drain-source voltage: 400V
Drain current: 0.12A
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: bulk
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 120mA; Idm: 0.5A; 1W; TO92
Mounting: THT
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.5A
Case: TO92
Drain-source voltage: 400V
Drain current: 0.12A
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: bulk
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 1.43 EUR |
53+ | 1.36 EUR |
64+ | 1.13 EUR |
65+ | 1.12 EUR |
68+ | 1.06 EUR |
100+ | 1.03 EUR |
DN2540N3-G |
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 120mA; Idm: 0.5A; 1W; TO92
Mounting: THT
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.5A
Case: TO92
Drain-source voltage: 400V
Drain current: 0.12A
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: bulk
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 120mA; Idm: 0.5A; 1W; TO92
Mounting: THT
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.5A
Case: TO92
Drain-source voltage: 400V
Drain current: 0.12A
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: bulk
Anzahl je Verpackung: 1 Stücke
auf Bestellung 246 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 1.43 EUR |
53+ | 1.36 EUR |
64+ | 1.13 EUR |
65+ | 1.12 EUR |
68+ | 1.06 EUR |
100+ | 1.03 EUR |
DN2540N3-G |
Hersteller: Microchip Technology
MOSFET 400V 25Ohm
MOSFET 400V 25Ohm
auf Bestellung 3110 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.54 EUR |
10+ | 1.52 EUR |
25+ | 1.31 EUR |
100+ | 1.2 EUR |
1000+ | 1.19 EUR |
DN2540N3-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 400V 0.12A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 400V 0.12A 3-Pin TO-92 Bag
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
122+ | 1.29 EUR |
123+ | 1.19 EUR |
DN2540N3-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 400V 0.12A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 400V 0.12A 3-Pin TO-92 Bag
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
84+ | 1.86 EUR |
250+ | 1.49 EUR |
500+ | 1.39 EUR |
1000+ | 1.3 EUR |
3000+ | 1.22 EUR |
DN2540N3-G |
Hersteller: MICROCHIP
Description: MICROCHIP - DN2540N3-G - Leistungs-MOSFET, n-Kanal, 400 V, 120 mA, 17 ohm, TO-92, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 400V
rohsCompliant: YES
Dauer-Drainstrom Id: 120mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: -
euEccn: NLR
Verlustleistung: 1W
Bauform - Transistor: TO-92
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 0V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 17ohm
SVHC: No SVHC (23-Jan-2024)
Description: MICROCHIP - DN2540N3-G - Leistungs-MOSFET, n-Kanal, 400 V, 120 mA, 17 ohm, TO-92, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 400V
rohsCompliant: YES
Dauer-Drainstrom Id: 120mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: -
euEccn: NLR
Verlustleistung: 1W
Bauform - Transistor: TO-92
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 0V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 17ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 4247 Stücke:
Lieferzeit 14-21 Tag (e)DN2540N3-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 400V 0.12A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 400V 0.12A 3-Pin TO-92 Bag
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
122+ | 1.29 EUR |
123+ | 1.19 EUR |
DN2540N3-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 400V 0.12A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 400V 0.12A 3-Pin TO-92 Bag
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 2.06 EUR |
100+ | 1.87 EUR |
DN2540N3-G-P003 |
Hersteller: Microchip Technology
Description: MOSFET N-CH 400V 120MA TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1W (Tc)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Description: MOSFET N-CH 400V 120MA TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1W (Tc)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 5856 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.69 EUR |
25+ | 1.42 EUR |
100+ | 1.29 EUR |
DN2540N3-G-P003 |
Hersteller: Microchip Technology
MOSFET N-Channel MOSFET 400V 0.12A 3P TO-92
MOSFET N-Channel MOSFET 400V 0.12A 3P TO-92
auf Bestellung 2644 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.67 EUR |
25+ | 1.41 EUR |
100+ | 1.28 EUR |
DN2540N3-G-P003 |
Hersteller: Microchip Technology
Description: MOSFET N-CH 400V 120MA TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1W (Tc)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Description: MOSFET N-CH 400V 120MA TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1W (Tc)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 1.29 EUR |
DN2540N5-G |
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 500mA; Idm: 0.5A; 15W; TO220
Mounting: THT
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.5A
Case: TO220
Drain-source voltage: 400V
Drain current: 0.5A
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 15W
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 500mA; Idm: 0.5A; 15W; TO220
Mounting: THT
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.5A
Case: TO220
Drain-source voltage: 400V
Drain current: 0.5A
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 15W
Polarisation: unipolar
Kind of package: tube
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 2.43 EUR |
32+ | 2.3 EUR |
34+ | 2.13 EUR |
36+ | 2 EUR |
100+ | 1.93 EUR |
DN2540N5-G |
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 500mA; Idm: 0.5A; 15W; TO220
Mounting: THT
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.5A
Case: TO220
Drain-source voltage: 400V
Drain current: 0.5A
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 15W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 500mA; Idm: 0.5A; 15W; TO220
Mounting: THT
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.5A
Case: TO220
Drain-source voltage: 400V
Drain current: 0.5A
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 15W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 196 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 2.43 EUR |
32+ | 2.3 EUR |
34+ | 2.13 EUR |
36+ | 2 EUR |
100+ | 1.93 EUR |
DN2540N5-G |
Hersteller: Microchip Technology
MOSFET 400V 25Ohm
MOSFET 400V 25Ohm
auf Bestellung 3124 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 2.89 EUR |
25+ | 2.41 EUR |
100+ | 2.2 EUR |
DN2540N5-G |
Hersteller: Microchip Technology
Description: MOSFET N-CH 400V 500MA TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 15W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Description: MOSFET N-CH 400V 500MA TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 15W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 417 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.9 EUR |
25+ | 2.42 EUR |
100+ | 2.21 EUR |
DN2540N5-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 400V 0.5A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH Si 400V 0.5A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 247 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
58+ | 2.74 EUR |
59+ | 2.59 EUR |
66+ | 2.2 EUR |
DN2540N5-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 400V 0.5A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH Si 400V 0.5A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 2246 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 2.19 EUR |
76+ | 2 EUR |
DN2540N5-G |
Hersteller: MICROCHIP
Description: MICROCHIP - DN2540N5-G - Leistungs-MOSFET, n-Kanal, 400 V, 500 mA, 17 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 400V
rohsCompliant: YES
Dauer-Drainstrom Id: 500mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: -
euEccn: NLR
Verlustleistung: 15W
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 0V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 17ohm
SVHC: No SVHC (23-Jan-2024)
Description: MICROCHIP - DN2540N5-G - Leistungs-MOSFET, n-Kanal, 400 V, 500 mA, 17 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 400V
rohsCompliant: YES
Dauer-Drainstrom Id: 500mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: -
euEccn: NLR
Verlustleistung: 15W
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 0V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 17ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 4114 Stücke:
Lieferzeit 14-21 Tag (e)DN2540N5-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 400V 0.5A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH Si 400V 0.5A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
41+ | 3.83 EUR |
50+ | 3.61 EUR |
100+ | 3.18 EUR |
DN2540N5-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 400V 0.5A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH Si 400V 0.5A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 247 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
58+ | 2.74 EUR |
59+ | 2.59 EUR |
66+ | 2.2 EUR |
DN2540N5-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 400V 0.5A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH Si 400V 0.5A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
54+ | 2.9 EUR |
250+ | 2.59 EUR |
500+ | 2.43 EUR |
DN2540N8-G |
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 170mA; Idm: 0.5A; 1.6W
Mounting: SMD
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.5A
Case: SOT89-3
Drain-source voltage: 400V
Drain current: 0.17A
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 170mA; Idm: 0.5A; 1.6W
Mounting: SMD
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.5A
Case: SOT89-3
Drain-source voltage: 400V
Drain current: 0.17A
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
auf Bestellung 408 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 2.02 EUR |
40+ | 1.83 EUR |
41+ | 1.74 EUR |
42+ | 1.72 EUR |
44+ | 1.64 EUR |
100+ | 1.59 EUR |
DN2540N8-G |
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 170mA; Idm: 0.5A; 1.6W
Mounting: SMD
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.5A
Case: SOT89-3
Drain-source voltage: 400V
Drain current: 0.17A
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 170mA; Idm: 0.5A; 1.6W
Mounting: SMD
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.5A
Case: SOT89-3
Drain-source voltage: 400V
Drain current: 0.17A
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 408 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 2.02 EUR |
40+ | 1.83 EUR |
41+ | 1.74 EUR |
42+ | 1.72 EUR |
44+ | 1.64 EUR |
100+ | 1.59 EUR |
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