Suchergebnisse für "dn25" : > 120
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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DN2540N8-G | MICROCHIP |
Description: MICROCHIP - DN2540N8-G - Leistungs-MOSFET, Verarmungstyp, n-Kanal, 400 V, 170 mA, 17 ohm, SOT-89, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 400V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: -V euEccn: NLR Verlustleistung: 1.6W Bauform - Transistor: SOT-89 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 0V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 17ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 5793 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2540N8-G | Microchip Technology | MOSFET 400V 25Ohm |
auf Bestellung 33927 Stücke: Lieferzeit 14-28 Tag (e) |
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DN2540N8-G | Microchip Technology | Trans MOSFET N-CH Si 400V 0.17A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2540N8-G | Microchip Technology | Trans MOSFET N-CH Si 400V 0.17A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 408 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2540N8-G | Microchip Technology | Trans MOSFET N-CH Si 400V 0.17A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 1454 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2540N8-G | MICROCHIP |
Description: MICROCHIP - DN2540N8-G - Leistungs-MOSFET, Verarmungstyp, n-Kanal, 400 V, 170 mA, 17 ohm, SOT-89, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 400V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: -V euEccn: NLR Verlustleistung: 1.6W Bauform - Transistor: SOT-89 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 0V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 17ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 5793 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2540N8-G | Microchip Technology | Trans MOSFET N-CH Si 400V 0.17A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2540N8-G | Microchip Technology |
Description: MOSFET N-CH 400V 170MA TO243AA Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Tj) Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Tc) Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 14000 Stücke: Lieferzeit 21-28 Tag (e) |
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DN2540N8-G | Microchip Technology |
Description: MOSFET N-CH 400V 170MA TO243AA Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Tj) Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Tc) Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 14194 Stücke: Lieferzeit 21-28 Tag (e) |
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DN2535 | SI |
auf Bestellung 580 Stücke: Lieferzeit 21-28 Tag (e) |
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DN2540N5 | SUPERTEX | 96+ QFN |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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AT25DN256-MAHF-T | Renesas Electronics Corporation |
Description: IC FLASH 256KBIT SPI 8UDFN Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 2.3V ~ 3.6V Technology: FLASH Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-UDFN (2x3) Part Status: Active Write Cycle Time - Word, Page: 8µs, 1.75ms Memory Interface: SPI Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 2557 Stücke: Lieferzeit 21-28 Tag (e) |
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AT25DN256-SSHF-T | Renesas / Dialog | NOR Flash 256 Kbit, 3.0V (2.3V to 3.6V), -40C to 85C, SOIC-N 150mil (Tape & Reel), Single, Dual SPI NOR flash |
auf Bestellung 7223 Stücke: Lieferzeit 14-28 Tag (e) |
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AT25DN256-XMHF-B | RENESAS |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256kbFLASH; Dual-Output Read,SPI; 104MHz; tube Mounting: SMD Manufacturer series: Fusion Operating voltage: 2.3...3.6V Information: Product is not designed for and should not be used in connection with any applications where the failure of such product would reasonably be expected to result in significant personal injury or death. It is not allowed to use any commercial or industrial Kind of interface: serial Memory: 256kb FLASH Case: TSSOP8 Type of integrated circuit: FLASH memory Interface: Dual-Output Read; SPI Clock frequency: 104MHz Kind of package: tube |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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AT25DN256-XMHF-B | ADESTO | AT25DN256-XMHFB Serial FLASH memories - integrated circ. |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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AT25DN256-XMHF-B | Renesas / Dialog | NOR Flash 256 Kbit, 3.0V (2.3V to 3.6V), -40C to 85C, TSSOP (Tube), Single, Dual SPI NOR flash |
auf Bestellung 2579 Stücke: Lieferzeit 14-28 Tag (e) |
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AT25DN256-XMHF-T | Renesas Electronics Corporation |
Description: IC FLASH 256KBIT SPI 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 2.3V ~ 3.6V Technology: FLASH Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-TSSOP Part Status: Active Write Cycle Time - Word, Page: 8µs, 1.75ms Memory Interface: SPI Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1474 Stücke: Lieferzeit 21-28 Tag (e) |
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BSC16DN25NS3 G | Infineon Technologies | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 |
auf Bestellung 17785 Stücke: Lieferzeit 14-28 Tag (e) |
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BSC16DN25NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 250V 10.9A TDSON-8-5 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 32µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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BSC16DN25NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 250V 10.9A TDSON-8-5 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 32µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V |
auf Bestellung 5679 Stücke: Lieferzeit 21-28 Tag (e) |
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BSZ16DN25NS3 G | Infineon Technologies | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 |
auf Bestellung 9928 Stücke: Lieferzeit 140-154 Tag (e) |
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BSZ16DN25NS3GATMA1 | Infineon Technologies | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 |
auf Bestellung 4990 Stücke: Lieferzeit 14-28 Tag (e) |
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BSZ16DN25NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 250V 10.9A 8TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 32µA Supplier Device Package: PG-TSDSON-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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BSZ16DN25NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 250V 10.9A 8TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 32µA Supplier Device Package: PG-TSDSON-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V |
auf Bestellung 6078 Stücke: Lieferzeit 21-28 Tag (e) |
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BSZ42DN25NS3 G | Infineon Technologies | MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3 |
auf Bestellung 10874 Stücke: Lieferzeit 14-28 Tag (e) |
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BSZ42DN25NS3GATMA1 | Infineon Technologies | N-канальний ПТ; Udss, В = 250; Id = 5 А; Ciss, пФ @ Uds, В = 430 @ 100; Qg, нКл = 5,5 @ 10 В; Rds = 425 мОм @ 2,5 A, 10 В; Ugs(th) = 4 В @ 13 мкА; Р, Вт = 33,8; Тексп, °C = -55...+150; Тип монт. = smd; PG-TSDSON-8 |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ42DN25NS3GATMA1 | Infineon Technologies | MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3 |
auf Bestellung 27381 Stücke: Lieferzeit 14-28 Tag (e) |
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BSZ42DN25NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 250V 5A TSDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 425mOhm @ 2.5A, 10V Power Dissipation (Max): 33.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 13µA Supplier Device Package: PG-TSDSON-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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BSZ42DN25NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 250V 5A TSDSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 425mOhm @ 2.5A, 10V Power Dissipation (Max): 33.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 13µA Supplier Device Package: PG-TSDSON-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V |
auf Bestellung 22581 Stücke: Lieferzeit 21-28 Tag (e) |
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MK51DN256CMD10 | NXP USA Inc. |
Description: IC MCU 32B 256KB FLASH 144MAPBGA Packaging: Tray Package / Case: 144-LBGA Mounting Type: Surface Mount Speed: 100MHz Program Memory Size: 256KB (256K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 41x16b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V Connectivity: EBI/EMI, I2C, IrDA, SD, SPI, UART/USART, USB, USB OTG Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT Supplier Device Package: 144-MAPBGA (13x13) Part Status: Active Number of I/O: 94 DigiKey Programmable: Not Verified |
auf Bestellung 730 Stücke: Lieferzeit 21-28 Tag (e) |
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MK60DN256VLL10 | NXP Semiconductors | ARM Microcontrollers - MCU Kinetis 256K |
auf Bestellung 270 Stücke: Lieferzeit 14-28 Tag (e) |
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MK60DN256VLL10 | NXP USA Inc. |
Description: IC MCU 32BIT 256KB FLASH 100LQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 100MHz Program Memory Size: 256KB (256K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 33x16b; D/A 1x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, SD, SPI, UART/USART, USB, USB OTG Peripherals: DMA, I2S, LVD, POR, PWM, WDT Supplier Device Package: 100-LQFP (14x14) Part Status: Active Number of I/O: 66 DigiKey Programmable: Not Verified |
auf Bestellung 277 Stücke: Lieferzeit 21-28 Tag (e) |
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MK60DN256VMD10 | NXP Semiconductors | ARM Microcontrollers - MCU Kinetis 256K |
auf Bestellung 800 Stücke: Lieferzeit 14-28 Tag (e) |
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MK60DN256VMD10 | NXP USA Inc. |
Description: IC MCU 32B 256KB FLASH 144MAPBGA Packaging: Tray Package / Case: 144-LBGA Mounting Type: Surface Mount Speed: 100MHz Program Memory Size: 256KB (256K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 42x16b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, SD, SPI, UART/USART, USB, USB OTG Peripherals: DMA, I2S, LVD, POR, PWM, WDT Supplier Device Package: 144-MAPBGA (13x13) Part Status: Active Number of I/O: 100 DigiKey Programmable: Not Verified |
auf Bestellung 1570 Stücke: Lieferzeit 21-28 Tag (e) |
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SMDN-25G | Chip Quik Inc. |
Description: DISPENSING NEEDLES / SYRINGE TIP Packaging: Bulk Type: Dispenser Needle, Tip Tip Type: Needle Tip Gauge: 25 Number of Pieces: 100 Part Status: Active |
auf Bestellung 118 Stücke: Lieferzeit 21-28 Tag (e) |
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14DN258A | FEVTI | DIP64 |
auf Bestellung 48 Stücke: Lieferzeit 21-28 Tag (e) |
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ADN2525ACPZ |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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ADN2525ACPZ-R7 | ADI |
auf Bestellung 580 Stücke: Lieferzeit 21-28 Tag (e) |
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ADN2526ACPZ | LFCSP | 2011+ |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
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ADN2526XCPZ | AD | 0837+ |
auf Bestellung 5 Stücke: Lieferzeit 21-28 Tag (e) |
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ADN2530Y |
auf Bestellung 1200 Stücke: Lieferzeit 21-28 Tag (e) |
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ADN2530YCPZ | ADI |
auf Bestellung 1200 Stücke: Lieferzeit 21-28 Tag (e) |
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NDN256W3A2BN6 | ST | 06+ |
auf Bestellung 16 Stücke: Lieferzeit 21-28 Tag (e) |
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NDN256W3A2BN6 | ST | 06+ |
auf Bestellung 16 Stücke: Lieferzeit 21-28 Tag (e) |
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NDN256W3A2BN6 | ST | TSOP |
auf Bestellung 16 Stücke: Lieferzeit 21-28 Tag (e) |
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UDN2540 |
auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) |
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UDN2540B | ALLEGRO |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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UDN2540B | ALLEGRO | DIP |
auf Bestellung 1432 Stücke: Lieferzeit 21-28 Tag (e) |
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UDN2541B |
auf Bestellung 3200 Stücke: Lieferzeit 21-28 Tag (e) |
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UDN2543 |
auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |
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UDN2543A | ALLEGRO | DIP |
auf Bestellung 870 Stücke: Lieferzeit 21-28 Tag (e) |
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UDN2543B | ALLEGRO | 01+ DIP16 |
auf Bestellung 145 Stücke: Lieferzeit 21-28 Tag (e) |
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UDN2543B | ALLEGRO | 09+ |
auf Bestellung 798 Stücke: Lieferzeit 21-28 Tag (e) |
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UDN2543B | ALL | 8727+ |
auf Bestellung 6 Stücke: Lieferzeit 21-28 Tag (e) |
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UDN2543B | ALLEGRO | DIP |
auf Bestellung 1200 Stücke: Lieferzeit 21-28 Tag (e) |
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UDN2543B | ALLEGRO |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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UDN2543BT |
auf Bestellung 2191 Stücke: Lieferzeit 21-28 Tag (e) |
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UDN2544 | ALLEGRO | N/A DIP16 |
auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) |
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UDN2544A |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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UDN2544B | ALLEGRO | DIP |
auf Bestellung 350 Stücke: Lieferzeit 21-28 Tag (e) |
DN2540N8-G |
Hersteller: MICROCHIP
Description: MICROCHIP - DN2540N8-G - Leistungs-MOSFET, Verarmungstyp, n-Kanal, 400 V, 170 mA, 17 ohm, SOT-89, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 400V
rohsCompliant: YES
Dauer-Drainstrom Id: 170mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: -V
euEccn: NLR
Verlustleistung: 1.6W
Bauform - Transistor: SOT-89
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 0V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 17ohm
SVHC: No SVHC (23-Jan-2024)
Description: MICROCHIP - DN2540N8-G - Leistungs-MOSFET, Verarmungstyp, n-Kanal, 400 V, 170 mA, 17 ohm, SOT-89, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 400V
rohsCompliant: YES
Dauer-Drainstrom Id: 170mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: -V
euEccn: NLR
Verlustleistung: 1.6W
Bauform - Transistor: SOT-89
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 0V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 17ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 5793 Stücke:
Lieferzeit 14-21 Tag (e)DN2540N8-G |
Hersteller: Microchip Technology
MOSFET 400V 25Ohm
MOSFET 400V 25Ohm
auf Bestellung 33927 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 2.56 EUR |
25+ | 2.15 EUR |
100+ | 1.93 EUR |
DN2540N8-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 400V 0.17A 4-Pin(3+Tab) SOT-89 T/R
Trans MOSFET N-CH Si 400V 0.17A 4-Pin(3+Tab) SOT-89 T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
105+ | 1.51 EUR |
DN2540N8-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 400V 0.17A 4-Pin(3+Tab) SOT-89 T/R
Trans MOSFET N-CH Si 400V 0.17A 4-Pin(3+Tab) SOT-89 T/R
auf Bestellung 408 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
54+ | 2.96 EUR |
55+ | 2.79 EUR |
100+ | 2.56 EUR |
250+ | 2.39 EUR |
DN2540N8-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 400V 0.17A 4-Pin(3+Tab) SOT-89 T/R
Trans MOSFET N-CH Si 400V 0.17A 4-Pin(3+Tab) SOT-89 T/R
auf Bestellung 1454 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
95+ | 1.67 EUR |
96+ | 1.59 EUR |
98+ | 1.5 EUR |
101+ | 1.41 EUR |
250+ | 1.32 EUR |
500+ | 1.23 EUR |
1000+ | 1.15 EUR |
DN2540N8-G |
Hersteller: MICROCHIP
Description: MICROCHIP - DN2540N8-G - Leistungs-MOSFET, Verarmungstyp, n-Kanal, 400 V, 170 mA, 17 ohm, SOT-89, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 400V
rohsCompliant: YES
Dauer-Drainstrom Id: 170mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: -V
euEccn: NLR
Verlustleistung: 1.6W
Bauform - Transistor: SOT-89
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 0V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 17ohm
SVHC: No SVHC (23-Jan-2024)
Description: MICROCHIP - DN2540N8-G - Leistungs-MOSFET, Verarmungstyp, n-Kanal, 400 V, 170 mA, 17 ohm, SOT-89, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 400V
rohsCompliant: YES
Dauer-Drainstrom Id: 170mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: -V
euEccn: NLR
Verlustleistung: 1.6W
Bauform - Transistor: SOT-89
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 0V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 17ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 5793 Stücke:
Lieferzeit 14-21 Tag (e)DN2540N8-G |
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 400V 0.17A 4-Pin(3+Tab) SOT-89 T/R
Trans MOSFET N-CH Si 400V 0.17A 4-Pin(3+Tab) SOT-89 T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
500+ | 1.63 EUR |
DN2540N8-G |
Hersteller: Microchip Technology
Description: MOSFET N-CH 400V 170MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.6W (Tc)
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Description: MOSFET N-CH 400V 170MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.6W (Tc)
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 14000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 1.95 EUR |
DN2540N8-G |
Hersteller: Microchip Technology
Description: MOSFET N-CH 400V 170MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.6W (Tc)
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Description: MOSFET N-CH 400V 170MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.6W (Tc)
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 14194 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 2.57 EUR |
25+ | 2.17 EUR |
100+ | 1.95 EUR |
AT25DN256-MAHF-T |
Hersteller: Renesas Electronics Corporation
Description: IC FLASH 256KBIT SPI 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.3V ~ 3.6V
Technology: FLASH
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-UDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 8µs, 1.75ms
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256KBIT SPI 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.3V ~ 3.6V
Technology: FLASH
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-UDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 8µs, 1.75ms
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2557 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 1.38 EUR |
20+ | 1.34 EUR |
25+ | 1.24 EUR |
100+ | 1.1 EUR |
250+ | 1.09 EUR |
500+ | 1.07 EUR |
1000+ | 1.04 EUR |
AT25DN256-SSHF-T |
Hersteller: Renesas / Dialog
NOR Flash 256 Kbit, 3.0V (2.3V to 3.6V), -40C to 85C, SOIC-N 150mil (Tape & Reel), Single, Dual SPI NOR flash
NOR Flash 256 Kbit, 3.0V (2.3V to 3.6V), -40C to 85C, SOIC-N 150mil (Tape & Reel), Single, Dual SPI NOR flash
auf Bestellung 7223 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 0.99 EUR |
57+ | 0.92 EUR |
100+ | 0.78 EUR |
500+ | 0.77 EUR |
1000+ | 0.75 EUR |
4000+ | 0.69 EUR |
8000+ | 0.63 EUR |
AT25DN256-XMHF-B |
Hersteller: RENESAS
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256kbFLASH; Dual-Output Read,SPI; 104MHz; tube
Mounting: SMD
Manufacturer series: Fusion
Operating voltage: 2.3...3.6V
Information: Product is not designed for and should not be used in connection with any applications where the failure of such product would reasonably be expected to result in significant personal injury or death. It is not allowed to use any commercial or industrial
Kind of interface: serial
Memory: 256kb FLASH
Case: TSSOP8
Type of integrated circuit: FLASH memory
Interface: Dual-Output Read; SPI
Clock frequency: 104MHz
Kind of package: tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256kbFLASH; Dual-Output Read,SPI; 104MHz; tube
Mounting: SMD
Manufacturer series: Fusion
Operating voltage: 2.3...3.6V
Information: Product is not designed for and should not be used in connection with any applications where the failure of such product would reasonably be expected to result in significant personal injury or death. It is not allowed to use any commercial or industrial
Kind of interface: serial
Memory: 256kb FLASH
Case: TSSOP8
Type of integrated circuit: FLASH memory
Interface: Dual-Output Read; SPI
Clock frequency: 104MHz
Kind of package: tube
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
75+ | 0.96 EUR |
77+ | 0.93 EUR |
80+ | 0.9 EUR |
84+ | 0.86 EUR |
AT25DN256-XMHF-B |
Hersteller: ADESTO
AT25DN256-XMHFB Serial FLASH memories - integrated circ.
AT25DN256-XMHFB Serial FLASH memories - integrated circ.
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 1 EUR |
77+ | 0.93 EUR |
82+ | 0.87 EUR |
84+ | 0.86 EUR |
AT25DN256-XMHF-B |
Hersteller: Renesas / Dialog
NOR Flash 256 Kbit, 3.0V (2.3V to 3.6V), -40C to 85C, TSSOP (Tube), Single, Dual SPI NOR flash
NOR Flash 256 Kbit, 3.0V (2.3V to 3.6V), -40C to 85C, TSSOP (Tube), Single, Dual SPI NOR flash
auf Bestellung 2579 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
47+ | 1.11 EUR |
48+ | 1.1 EUR |
100+ | 0.9 EUR |
500+ | 0.81 EUR |
10000+ | 0.77 EUR |
AT25DN256-XMHF-T |
Hersteller: Renesas Electronics Corporation
Description: IC FLASH 256KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.3V ~ 3.6V
Technology: FLASH
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 8µs, 1.75ms
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.3V ~ 3.6V
Technology: FLASH
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 8µs, 1.75ms
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1474 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 1.14 EUR |
25+ | 1.06 EUR |
50+ | 1.05 EUR |
100+ | 0.93 EUR |
250+ | 0.92 EUR |
500+ | 0.91 EUR |
1000+ | 0.88 EUR |
BSC16DN25NS3 G |
Hersteller: Infineon Technologies
MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
auf Bestellung 17785 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 5.17 EUR |
13+ | 4.13 EUR |
100+ | 3.41 EUR |
250+ | 3.35 EUR |
500+ | 2.91 EUR |
1000+ | 2.33 EUR |
2500+ | 2.32 EUR |
BSC16DN25NS3GATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 10.9A TDSON-8-5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 32µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
Description: MOSFET N-CH 250V 10.9A TDSON-8-5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 32µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 2.26 EUR |
BSC16DN25NS3GATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 10.9A TDSON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 32µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
Description: MOSFET N-CH 250V 10.9A TDSON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 32µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
auf Bestellung 5679 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.2 EUR |
10+ | 4.33 EUR |
100+ | 3.44 EUR |
500+ | 2.91 EUR |
1000+ | 2.47 EUR |
2000+ | 2.35 EUR |
BSZ16DN25NS3 G |
Hersteller: Infineon Technologies
MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
auf Bestellung 9928 Stücke:
Lieferzeit 140-154 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 5.12 EUR |
13+ | 4.29 EUR |
100+ | 3.38 EUR |
250+ | 3.15 EUR |
500+ | 2.86 EUR |
1000+ | 2.44 EUR |
2500+ | 2.32 EUR |
BSZ16DN25NS3GATMA1 |
Hersteller: Infineon Technologies
MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
auf Bestellung 4990 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 5.15 EUR |
13+ | 4.29 EUR |
100+ | 3.41 EUR |
250+ | 3.3 EUR |
500+ | 2.91 EUR |
1000+ | 2.32 EUR |
5000+ | 2.25 EUR |
BSZ16DN25NS3GATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 10.9A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 32µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
Description: MOSFET N-CH 250V 10.9A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 32µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 2.25 EUR |
BSZ16DN25NS3GATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 10.9A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 32µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
Description: MOSFET N-CH 250V 10.9A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 32µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
auf Bestellung 6078 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 5.17 EUR |
10+ | 4.31 EUR |
100+ | 3.43 EUR |
500+ | 2.9 EUR |
1000+ | 2.46 EUR |
2000+ | 2.34 EUR |
BSZ42DN25NS3 G |
Hersteller: Infineon Technologies
MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3
MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3
auf Bestellung 10874 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 3.41 EUR |
19+ | 2.81 EUR |
100+ | 2.18 EUR |
500+ | 1.84 EUR |
1000+ | 1.5 EUR |
2500+ | 1.41 EUR |
5000+ | 1.34 EUR |
BSZ42DN25NS3GATMA1 |
Hersteller: Infineon Technologies
N-канальний ПТ; Udss, В = 250; Id = 5 А; Ciss, пФ @ Uds, В = 430 @ 100; Qg, нКл = 5,5 @ 10 В; Rds = 425 мОм @ 2,5 A, 10 В; Ugs(th) = 4 В @ 13 мкА; Р, Вт = 33,8; Тексп, °C = -55...+150; Тип монт. = smd; PG-TSDSON-8
N-канальний ПТ; Udss, В = 250; Id = 5 А; Ciss, пФ @ Uds, В = 430 @ 100; Qg, нКл = 5,5 @ 10 В; Rds = 425 мОм @ 2,5 A, 10 В; Ugs(th) = 4 В @ 13 мкА; Р, Вт = 33,8; Тексп, °C = -55...+150; Тип монт. = smd; PG-TSDSON-8
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 5.06 EUR |
10+ | 4.36 EUR |
100+ | 3.83 EUR |
BSZ42DN25NS3GATMA1 |
Hersteller: Infineon Technologies
MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3
MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3
auf Bestellung 27381 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 3.41 EUR |
20+ | 2.65 EUR |
100+ | 2.11 EUR |
500+ | 1.78 EUR |
1000+ | 1.41 EUR |
2500+ | 1.39 EUR |
5000+ | 1.34 EUR |
BSZ42DN25NS3GATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 5A TSDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 425mOhm @ 2.5A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TSDSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
Description: MOSFET N-CH 250V 5A TSDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 425mOhm @ 2.5A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TSDSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 1.35 EUR |
10000+ | 1.29 EUR |
BSZ42DN25NS3GATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 5A TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 425mOhm @ 2.5A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TSDSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
Description: MOSFET N-CH 250V 5A TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 425mOhm @ 2.5A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TSDSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
auf Bestellung 22581 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.43 EUR |
10+ | 2.81 EUR |
100+ | 2.19 EUR |
500+ | 1.86 EUR |
1000+ | 1.51 EUR |
2000+ | 1.42 EUR |
MK51DN256CMD10 |
Hersteller: NXP USA Inc.
Description: IC MCU 32B 256KB FLASH 144MAPBGA
Packaging: Tray
Package / Case: 144-LBGA
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 41x16b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: EBI/EMI, I2C, IrDA, SD, SPI, UART/USART, USB, USB OTG
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 144-MAPBGA (13x13)
Part Status: Active
Number of I/O: 94
DigiKey Programmable: Not Verified
Description: IC MCU 32B 256KB FLASH 144MAPBGA
Packaging: Tray
Package / Case: 144-LBGA
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 41x16b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: EBI/EMI, I2C, IrDA, SD, SPI, UART/USART, USB, USB OTG
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 144-MAPBGA (13x13)
Part Status: Active
Number of I/O: 94
DigiKey Programmable: Not Verified
auf Bestellung 730 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 43.47 EUR |
10+ | 34.73 EUR |
160+ | 29.33 EUR |
480+ | 29.15 EUR |
MK60DN256VLL10 |
Hersteller: NXP Semiconductors
ARM Microcontrollers - MCU Kinetis 256K
ARM Microcontrollers - MCU Kinetis 256K
auf Bestellung 270 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 36.58 EUR |
10+ | 24.7 EUR |
250+ | 24.54 EUR |
450+ | 23.14 EUR |
2700+ | 22.05 EUR |
5400+ | 22.02 EUR |
10350+ | 21.94 EUR |
MK60DN256VLL10 |
Hersteller: NXP USA Inc.
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 33x16b; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, SD, SPI, UART/USART, USB, USB OTG
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 66
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 33x16b; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, SD, SPI, UART/USART, USB, USB OTG
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 66
DigiKey Programmable: Not Verified
auf Bestellung 277 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 36.84 EUR |
10+ | 29.43 EUR |
90+ | 24.85 EUR |
MK60DN256VMD10 |
Hersteller: NXP Semiconductors
ARM Microcontrollers - MCU Kinetis 256K
ARM Microcontrollers - MCU Kinetis 256K
auf Bestellung 800 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 40.38 EUR |
10+ | 30.21 EUR |
100+ | 27.09 EUR |
250+ | 26.75 EUR |
500+ | 26.73 EUR |
800+ | 26.47 EUR |
MK60DN256VMD10 |
Hersteller: NXP USA Inc.
Description: IC MCU 32B 256KB FLASH 144MAPBGA
Packaging: Tray
Package / Case: 144-LBGA
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 42x16b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, SD, SPI, UART/USART, USB, USB OTG
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-MAPBGA (13x13)
Part Status: Active
Number of I/O: 100
DigiKey Programmable: Not Verified
Description: IC MCU 32B 256KB FLASH 144MAPBGA
Packaging: Tray
Package / Case: 144-LBGA
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 42x16b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, SD, SPI, UART/USART, USB, USB OTG
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-MAPBGA (13x13)
Part Status: Active
Number of I/O: 100
DigiKey Programmable: Not Verified
auf Bestellung 1570 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 40.92 EUR |
10+ | 32.7 EUR |
160+ | 27.62 EUR |
480+ | 27.45 EUR |
SMDN-25G |
Hersteller: Chip Quik Inc.
Description: DISPENSING NEEDLES / SYRINGE TIP
Packaging: Bulk
Type: Dispenser Needle, Tip
Tip Type: Needle Tip
Gauge: 25
Number of Pieces: 100
Part Status: Active
Description: DISPENSING NEEDLES / SYRINGE TIP
Packaging: Bulk
Type: Dispenser Needle, Tip
Tip Type: Needle Tip
Gauge: 25
Number of Pieces: 100
Part Status: Active
auf Bestellung 118 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 48.57 EUR |