Hersteller: International Rectifier Corporation
MOSFET N-CH 55V, 110A, TO-220

Hersteller: IR
08+;

Hersteller: IR
08+;

Hersteller: IR
09+

Hersteller: IR
TO-263

Hersteller: Amphenol RF
Description: ADAPTER, SMA JACK TO HD-EFI PLUG
Packaging: Bulk
Impedance: 50 Ohms
Mounting Type: Free Hanging (In-Line)
Style: Straight
Convert From (Adapter End): SMA Jack, Female Socket
Convert To (Adapter End): EFI, HD Plug, Female Socket
Fastening Type: Snap-In, Threaded
Adapter Series: SMA to EFI, HD
Adapter Type: Plug to Jack
Center Gender: Female to Male
Conversion Type: Between Series
Center Contact Plating: Gold
Part Status: Active
Frequency - Max: 6 GHz

Hersteller: WXDH
Transistor N-Channel MOSFET; 60V; 25V; 7mOhm; 120A; 204W; -55°C ~ 175°C; Equivalent: IRF3205; D3205 DONGHAI TIRF3205 DH
Anzahl je Verpackung: 25 Stücke

Hersteller: HUAYI
Transistor N-Channel MOSFET; 70V; 20V; 100A; 6,5Ohm; 125W; -55°C ~ 175°C; Similar to: IRF3205; HYG065N07NS1P HUAYI THYG065n07ns1p
Anzahl je Verpackung: 20 Stücke

Verschiedene Bauteile > Other components 3

Verschiedene Bauteile > Other components 3

IC > IC andere

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8542 39 90 00

Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: D2Pak (TO-263-3)
Uds,V: 55
Idd,A: 75
Rds(on), Ohm: 6.5 mOhm
Ciss, pF/Qg, nC: 3450/76
JHGF: SMD

Hersteller: Glenair
Circular MIL Spec Backshells ACCESSORIES - BANDING/CRIMP ADAPTER

Hersteller: Glenair
Circular MIL Spec Backshells 11+ start 3 wks AOC

Hersteller: Amphenol ICC (FCI)
Description: CONN HDR 10P 0.079" STACK SMD
Packaging: Bulk
Color: Black
Mounting Type: Surface Mount
Pitch: 0.079" (2.00mm)
Row Spacing: 0.079" (2.00mm)
Termination: Solder
Contact Finish - Post (Mating): Gold
Contact Finish Thickness - Post (Mating): 8.00µin (0.203µm)
Part Status: Obsolete
Number of Rows: 2
Number of Positions: 10
Length - Overall Pin: 0.488" (12.400mm)
Length - Post (Mating): 0.098" (2.500mm)
Length - Stack Height: 0.331" (8.400mm)

Hersteller: Amphenol FCI
Board to Board & Mezzanine Connectors MTK R/R SMT HDR

Hersteller: Amphenol ICC (FCI)
Description: CONN HDR 10P 0.079" STACK SMD
Packaging: Bag
Color: Black
Mounting Type: Surface Mount
Pitch: 0.079" (2.00mm)
Row Spacing: 0.079" (2.00mm)
Termination: Solder
Contact Finish - Post (Mating): Gold
Contact Finish Thickness - Post (Mating): 8.00µin (0.203µm)
Part Status: Active
Number of Rows: 2
Number of Positions: 10
Length - Overall Pin: 0.488" (12.400mm)
Length - Post (Mating): 0.098" (2.500mm)
Length - Stack Height: 0.331" (8.400mm)

Hersteller: Amphenol FCI
Board to Board & Mezzanine Connectors Minitek 2.00mm, Board To Board, Unshrouded Vertical Header, Surface Mount, Double Row, 10 Positions.

Hersteller: Amphenol ICC (FCI)
Description: CONN HDR STACK SMD
Packaging: Bag
Part Status: Active
Color: Black
Mounting Type: Surface Mount
Pitch: 0.079" (2.00mm)
Row Spacing: 0.079" (2.000mm)
Termination: Solder
Contact Finish - Post (Mating): Gold
Contact Finish Thickness - Post (Mating): 8.00µin (0.203µm)
Number of Rows: 2
Number of Positions: 10
Length - Overall Pin: 0.488" (12.395mm)
Length - Post (Mating): 0.146" (3.700mm)
Length - Stack Height: 0.343" (8.700mm)

Hersteller: Amphenol FCI
Board to Board & Mezzanine Connectors Minitek 2.00mm, Board to Board Connector, Unshrouded Stacking Header - Surface Mount - Double row - 10 Positions - 2mm (0.079inch) - Vertical.

Hersteller: Amphenol ICC (FCI)
Description: CONN HDR STACK SMD
Packaging: Tape & Reel (TR)
Part Status: Active
Color: Black
Mounting Type: Surface Mount
Pitch: 0.079" (2.00mm)
Row Spacing: 0.079" (2.000mm)
Termination: Solder
Contact Finish - Post (Mating): Gold
Contact Finish Thickness - Post (Mating): 8.00µin (0.203µm)
Number of Rows: 2
Number of Positions: 10
Length - Overall Pin: 0.488" (12.395mm)
Length - Post (Mating): 0.146" (3.700mm)
Length - Stack Height: 0.343" (8.700mm)

Hersteller: Glenair
Circular MIL Spec Tools, Hardware & Accessories 11+ start 3 wks AOC

Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 110A Automotive 3-Pin(3+Tab) TO-220AB Tube

Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 170W; TO220AB
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Drain-source voltage: 55V
Drain current: 110A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 76nC
Technology: HEXFET®

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 110A Automotive 3-Pin(3+Tab) TO-220AB Tube

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 110A Automotive 3-Pin(2+Tab) D2PAK Tube

Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 110A Automotive 3-Pin(2+Tab) D2PAK T/R

Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V

Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V

Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 55V 100A 3-Pin(3+Tab) TO-220AB

Hersteller: onsemi
Description: MOSFET N-CH 55V 100A TO220-3
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 59A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-220AB Tube

Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 110A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V

Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 110A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V

Hersteller: IR - ASA only Supplier
Trans MOSFET N-CH Si 55V 110A 3-Pin(2+Tab) D2PAK T/R

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 110A 3-Pin(2+Tab) D2PAK T/R

Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 110A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 110A 3-Pin(2+Tab) D2PAK T/R

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 110A 3-Pin(2+Tab) D2PAK T/R

Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V

Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Kind of channel: enhanced
Mounting: SMD
Case: D2PAK
Drain-source voltage: 55V
Drain current: 110A
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 110A 3-Pin(2+Tab) D2PAK T/R

Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V

Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V

Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V

Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V

Hersteller: Infineon Technologies
IRF3205ZPBFAKSA1

Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V

Hersteller: Infineon Technologies
MOSFET TRENCH 40<-<100V

Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 110A 3-Pin(2+Tab) D2PAK

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V