Suchergebnisse für "rf740" : > 120
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRF740PBF | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2847 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF740PBF | Vishay Siliconix |
Description: MOSFET N-CH 400V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 2872 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF740PBF | Vishay Semiconductors |
MOSFET 400V N-CH HEXFET |
auf Bestellung 14878 Stücke: Lieferzeit 14-28 Tag (e) |
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IRF740PBF-BE3 | Vishay Siliconix |
Description: MOSFET N-CH 400V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 5.3A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 4801 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF740PBF-BE3 | Vishay / Siliconix |
MOSFET 400V N-CH MOSFET |
auf Bestellung 17002 Stücke: Lieferzeit 14-28 Tag (e) |
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| IRF740S | Siliconix |
 Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK IRF740STR IRF740STRL IRF740STRR IRF740S IRF740S VISHAY TIRF740sAnzahl je Verpackung: 10 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF740S2515 | Harris Corporation |
Description: 10A, 400V, 0.55OHM, N-CHANNEL, P Packaging: Bulk Part Status: Active |
auf Bestellung 2200 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF740SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 891 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF740SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 891 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF740SPBF | Vishay Siliconix |
Description: MOSFET N-CH 400V 10A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 3335 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF740SPBF | IR |
Транз. Пол. БМ N-MOSFET D2-Pak Udss=400V; Id=10A; Pdmax=125W; Rds=0,55 Ohm |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF740SPBF | Vishay/IR |
N-канальний ПТ; Udss, В = 400; Id = 10 А; Ptot, Вт = 3,1; Тип монт. = smd; Ciss, пФ @ Uds, В = 1400 @ 25; Qg, нКл = 63 @ 10 В; Rds = 550 мОм @ 6 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 4 В @ 250 мкА; D2PAK |
auf Bestellung 274 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF740SPBF | Vishay Semiconductors |
MOSFET N-Chan 400V 10 Amp |
auf Bestellung 1234 Stücke: Lieferzeit 14-28 Tag (e) |
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IRF740SPBF | Vishay |
Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK |
auf Bestellung 607 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF740STRLPBF | Vishay Siliconix |
Description: MOSFET N-CH 400V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 10400 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF740STRLPBF | Vishay Siliconix |
Description: MOSFET N-CH 400V 10A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 10863 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF740STRLPBF | Vishay |
Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF740STRLPBF | Vishay Semiconductors |
MOSFET 400V N-CH HEXFET D2-PA |
auf Bestellung 2643 Stücke: Lieferzeit 14-28 Tag (e) |
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IRF740STRRPBF | Vishay Semiconductors |
MOSFET N-Chan 400V 10 Amp |
auf Bestellung 361 Stücke: Lieferzeit 14-28 Tag (e) |
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| IRF740 | Siliconix |
N-MOSFET 10A 400V 125W 0.55Ω IRF740 TIRF740 |
auf Bestellung 450 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF7401TR | IR | 0449+ |
auf Bestellung 738 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7402 | IR | SO-8 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7402 | IOR |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7402 | IOR | 09+ |
auf Bestellung 2508 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7402 | IOR | 09+ SO-8 |
auf Bestellung 3854 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7402TR | IOR |
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auf Bestellung 16000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7402TRPBF | IOR |
09+ |
auf Bestellung 8318 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7402TRPBF | IR |
SOP8 07+08+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7402TRPBF | IR |
SOP8 2004+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7402TRPBF | IOR |
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auf Bestellung 200000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7403TR | IOR |
9742 |
auf Bestellung 3175 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7404 | IR |
09+ |
auf Bestellung 20408 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7404 | IOR |
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auf Bestellung 14852 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7404 | IR |
SO-8 |
auf Bestellung 42000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7404 | IOR |
09+ |
auf Bestellung 8518 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7404 | IOR |
09+ SO-8 |
auf Bestellung 15570 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7404QTRPBF | IOR |
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auf Bestellung 37500 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7404TRPBF |
IRF7404TRPBF Транзисторы HEXFET |
auf Bestellung 10 Stücke: Lieferzeit 7-21 Tag (e) |
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| IRF7404TRPF |
auf Bestellung 1993 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7406TR | Infineon | P-MOSFET 5.8A 30V 2.5W 0.045Ω IRF7406, IRF7406TR , Possible substitute: IRF9335 IRF7406 smd TIRF7406 |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF7406TRF | IR | 09+ MAC(8) |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF740AS | IR |
TO-263 |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF740AS(94-2400) |
auf Bestellung 1322 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF740B |
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auf Bestellung 4080 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF740LCPBF; 10A; 400V; 0,55R; 125W; N-канальний; корпус: ТО220; VISHAY |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF740LCS |
auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF740LCSTRR |
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auf Bestellung 934 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF740N | IR | 09+ |
auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF740NPBF | IR | 08+ QFP |
auf Bestellung 250 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF740PFB |
auf Bestellung 3080 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF740STR |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF740STRL |
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auf Bestellung 1200 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF740STRRPBF | IR |
09+ MSOP-8 |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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| TRF740 |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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| Транзистор IRF740; TO-220 |
auf Bestellung 5 Stücke: Lieferzeit 7-21 Tag (e) |
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| Транзистор польовий IRF740 10A 400V N-ch ТО-220 |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
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| Транзистор польовий IRF7403 8.5A 30V N-ch SO8 |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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| 740 | WXDH |
Transistor N-Channel MOSFET; 400V; 30V; 550mOhm; 10A; 100W; -55°C ~ 150°C; Equivalent: IRF740; IRF740-BE3; 740 DONGHAI TIRF740 DH Anzahl je Verpackung: 10 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI740G | Siliconix |
N-MOSFET 5.7A 400V 40W 0.55Ω IRFI740G TIRF740 iso Anzahl je Verpackung: 10 Stücke |
auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
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| YFW9435AS | YFW |
Transistor P-Channel MOSFET; 30V; 20V; 70mOhm; 5,8A; 2,5W; -55°C ~ 150°C; IRF7406TR; IRF7406; IRF7406TR; IRF9335; IRF7406-GURT; IRF7406 TIRF7406 c Anzahl je Verpackung: 100 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF740PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2847 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 56+ | 1.29 EUR |
| 65+ | 1.12 EUR |
| 71+ | 1.02 EUR |
| 80+ | 0.9 EUR |
| 85+ | 0.84 EUR |
| 250+ | 0.82 EUR |
| IRF740PBF |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 2872 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 3.24 EUR |
| 100+ | 2.67 EUR |
| 500+ | 2.26 EUR |
| 1000+ | 1.92 EUR |
| 2000+ | 1.82 EUR |
| IRF740PBF |
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Hersteller: Vishay Semiconductors
MOSFET 400V N-CH HEXFET
MOSFET 400V N-CH HEXFET
auf Bestellung 14878 Stücke:
Lieferzeit 14-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 4.08 EUR |
| 16+ | 3.41 EUR |
| 100+ | 2.73 EUR |
| 250+ | 2.68 EUR |
| 500+ | 2.65 EUR |
| 1000+ | 2.56 EUR |
| IRF740PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 5.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 5.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 4801 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 2.27 EUR |
| 100+ | 1.88 EUR |
| 500+ | 1.7 EUR |
| IRF740PBF-BE3 |
|
Hersteller: Vishay / Siliconix
MOSFET 400V N-CH MOSFET
MOSFET 400V N-CH MOSFET
auf Bestellung 17002 Stücke:
Lieferzeit 14-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 3.98 EUR |
| 18+ | 3.04 EUR |
| 100+ | 2.73 EUR |
| 500+ | 2.49 EUR |
| 1000+ | 2.25 EUR |
| 2000+ | 2.14 EUR |
| 5000+ | 2.1 EUR |
| IRF740S | |
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Hersteller: Siliconix
Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK IRF740STR IRF740STRL IRF740STRR IRF740S IRF740S VISHAY TIRF740s
Anzahl je Verpackung: 10 Stücke
Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK IRF740STR IRF740STRL IRF740STRR IRF740S IRF740S VISHAY TIRF740s
Anzahl je Verpackung: 10 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 2.57 EUR |
| IRF740S2515 |
Hersteller: Harris Corporation
Description: 10A, 400V, 0.55OHM, N-CHANNEL, P
Packaging: Bulk
Part Status: Active
Description: 10A, 400V, 0.55OHM, N-CHANNEL, P
Packaging: Bulk
Part Status: Active
auf Bestellung 2200 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 381+ | 1.3 EUR |
| IRF740SPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 891 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 37+ | 1.94 EUR |
| 41+ | 1.76 EUR |
| 47+ | 1.54 EUR |
| 52+ | 1.39 EUR |
| 55+ | 1.32 EUR |
| 250+ | 1.29 EUR |
| IRF740SPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 891 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 37+ | 1.94 EUR |
| 41+ | 1.76 EUR |
| 47+ | 1.54 EUR |
| 52+ | 1.39 EUR |
| 55+ | 1.32 EUR |
| 250+ | 1.29 EUR |
| IRF740SPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 3335 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.44 EUR |
| 100+ | 3.67 EUR |
| 500+ | 3.1 EUR |
| 1000+ | 2.63 EUR |
| 2000+ | 2.5 EUR |
| IRF740SPBF |
|
Hersteller: IR
Транз. Пол. БМ N-MOSFET D2-Pak Udss=400V; Id=10A; Pdmax=125W; Rds=0,55 Ohm
Транз. Пол. БМ N-MOSFET D2-Pak Udss=400V; Id=10A; Pdmax=125W; Rds=0,55 Ohm
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.63 EUR |
| 10+ | 5.87 EUR |
| IRF740SPBF |
|
Hersteller: Vishay/IR
N-канальний ПТ; Udss, В = 400; Id = 10 А; Ptot, Вт = 3,1; Тип монт. = smd; Ciss, пФ @ Uds, В = 1400 @ 25; Qg, нКл = 63 @ 10 В; Rds = 550 мОм @ 6 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 4 В @ 250 мкА; D2PAK
N-канальний ПТ; Udss, В = 400; Id = 10 А; Ptot, Вт = 3,1; Тип монт. = smd; Ciss, пФ @ Uds, В = 1400 @ 25; Qg, нКл = 63 @ 10 В; Rds = 550 мОм @ 6 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 4 В @ 250 мкА; D2PAK
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 3.15 EUR |
| 10+ | 2.72 EUR |
| 100+ | 2.39 EUR |
| IRF740SPBF |
|
Hersteller: Vishay Semiconductors
MOSFET N-Chan 400V 10 Amp
MOSFET N-Chan 400V 10 Amp
auf Bestellung 1234 Stücke:
Lieferzeit 14-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 5.75 EUR |
| 11+ | 4.73 EUR |
| 100+ | 3.95 EUR |
| 250+ | 3.69 EUR |
| 500+ | 3.33 EUR |
| 1000+ | 2.99 EUR |
| 2000+ | 2.94 EUR |
| IRF740SPBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK
auf Bestellung 607 Stücke:
Lieferzeit 14-21 Tag (e)| IRF740STRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 10400 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 1.86 EUR |
| IRF740STRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 10863 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 3.12 EUR |
| 100+ | 2.58 EUR |
| IRF740STRLPBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)| IRF740STRLPBF |
|
Hersteller: Vishay Semiconductors
MOSFET 400V N-CH HEXFET D2-PA
MOSFET 400V N-CH HEXFET D2-PA
auf Bestellung 2643 Stücke:
Lieferzeit 14-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 4.58 EUR |
| 14+ | 3.82 EUR |
| 100+ | 3.04 EUR |
| 500+ | 3.02 EUR |
| 800+ | 2.86 EUR |
| IRF740STRRPBF |
|
Hersteller: Vishay Semiconductors
MOSFET N-Chan 400V 10 Amp
MOSFET N-Chan 400V 10 Amp
auf Bestellung 361 Stücke:
Lieferzeit 14-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 7.2 EUR |
| 10+ | 6.01 EUR |
| 100+ | 4.76 EUR |
| 250+ | 4.39 EUR |
| 500+ | 3.8 EUR |
| 800+ | 3.25 EUR |
| 4800+ | 3.15 EUR |
| IRF740 |
|
Hersteller: Siliconix
N-MOSFET 10A 400V 125W 0.55Ω IRF740 TIRF740
N-MOSFET 10A 400V 125W 0.55Ω IRF740 TIRF740
auf Bestellung 450 Stücke:
Lieferzeit 7-14 Tag (e)| IRF7406TR |
Hersteller: Infineon
P-MOSFET 5.8A 30V 2.5W 0.045Ω IRF7406, IRF7406TR , Possible substitute: IRF9335 IRF7406 smd TIRF7406
P-MOSFET 5.8A 30V 2.5W 0.045Ω IRF7406, IRF7406TR , Possible substitute: IRF9335 IRF7406 smd TIRF7406
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)| IRF740LCPBF; 10A; 400V; 0,55R; 125W; N-канальний; корпус: ТО220; VISHAY |
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)| 740 |
|
Hersteller: WXDH
Transistor N-Channel MOSFET; 400V; 30V; 550mOhm; 10A; 100W; -55°C ~ 150°C; Equivalent: IRF740; IRF740-BE3; 740 DONGHAI TIRF740 DH
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 400V; 30V; 550mOhm; 10A; 100W; -55°C ~ 150°C; Equivalent: IRF740; IRF740-BE3; 740 DONGHAI TIRF740 DH
Anzahl je Verpackung: 10 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 1.52 EUR |
| IRFI740G | |
|
Hersteller: Siliconix
N-MOSFET 5.7A 400V 40W 0.55Ω IRFI740G TIRF740 iso
Anzahl je Verpackung: 10 Stücke
N-MOSFET 5.7A 400V 40W 0.55Ω IRFI740G TIRF740 iso
Anzahl je Verpackung: 10 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 2.27 EUR |
| YFW9435AS |
Hersteller: YFW
Transistor P-Channel MOSFET; 30V; 20V; 70mOhm; 5,8A; 2,5W; -55°C ~ 150°C; IRF7406TR; IRF7406; IRF7406TR; IRF9335; IRF7406-GURT; IRF7406 TIRF7406 c
Anzahl je Verpackung: 100 Stücke
Transistor P-Channel MOSFET; 30V; 20V; 70mOhm; 5,8A; 2,5W; -55°C ~ 150°C; IRF7406TR; IRF7406; IRF7406TR; IRF9335; IRF7406-GURT; IRF7406 TIRF7406 c
Anzahl je Verpackung: 100 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 200+ | 0.21 EUR |