Produkte > SHINDENGEN > Alle Produkte des Herstellers SHINDENGEN (3660) > Seite 37 nach 61
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MTD2525J | SHINDENGEN | 2000 |
auf Bestellung 614 Stücke: Lieferzeit 21-28 Tag (e) |
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MV1001SC-5072 | Shindengen | LED Lighting Drivers LED Driver IC |
Produkt ist nicht verfügbar |
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MV1002SC-5072 | Shindengen | LED Lighting Drivers LED Driver IC |
Produkt ist nicht verfügbar |
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MV1011SC-5072 | Shindengen | Switching Controllers LED Driver Power IC MV series |
Produkt ist nicht verfügbar |
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MV1012SC-5072 | Shindengen | Switching Controllers LED Driver Power IC MV series |
Produkt ist nicht verfügbar |
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MV2002SG-3072 | Shindengen | LED Lighting Drivers LED Driver IC |
Produkt ist nicht verfügbar |
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MV2052SG-3072 | Shindengen | LED Lighting Drivers LED Driver IC |
Produkt ist nicht verfügbar |
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NSD03A40 | Shindengen |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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NSD03C20 | SHINDENGEN |
auf Bestellung 1406 Stücke: Lieferzeit 21-28 Tag (e) |
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NSF03A60 | SHINDENGEN |
auf Bestellung 3750 Stücke: Lieferzeit 21-28 Tag (e) |
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P0R5B60HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A Mounting: SMD Case: FB (TO252AA) Polarisation: unipolar Power dissipation: 35W Kind of package: reel; tape Gate charge: 4.3nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 2A Drain-source voltage: 600V Drain current: 0.5A On-state resistance: 10Ω Type of transistor: N-MOSFET |
auf Bestellung 2999 Stücke: Lieferzeit 14-21 Tag (e) |
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P0R5B60HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A Mounting: SMD Case: FB (TO252AA) Polarisation: unipolar Power dissipation: 35W Kind of package: reel; tape Gate charge: 4.3nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 2A Drain-source voltage: 600V Drain current: 0.5A On-state resistance: 10Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2999 Stücke: Lieferzeit 7-14 Tag (e) |
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P100FA7R5EN-5100 | Shindengen | MOSFET 75V, 100A EETMOS POWER MOSFET |
Produkt ist nicht verfügbar |
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P100FH4ENK-7071 | Shindengen | MOSFET EETMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
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P100FP12SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 100A; Idm: 400A; 238W Mounting: SMD On-state resistance: 7mΩ Type of transistor: N-MOSFET Power dissipation: 238W Polarisation: unipolar Kind of package: reel; tape Gate charge: 164nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Case: FP (SC83 similar) Drain-source voltage: 120V Drain current: 100A |
Produkt ist nicht verfügbar |
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P100FP12SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 100A; Idm: 400A; 238W Mounting: SMD On-state resistance: 7mΩ Type of transistor: N-MOSFET Power dissipation: 238W Polarisation: unipolar Kind of package: reel; tape Gate charge: 164nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Case: FP (SC83 similar) Drain-source voltage: 120V Drain current: 100A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P105LF4QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 105A; Idm: 315A; 168W Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 2.7mΩ Pulsed drain current: 315A Power dissipation: 168W Gate charge: 76nC Polarisation: unipolar Technology: EETMOS4 Drain current: 105A Kind of channel: enhanced Drain-source voltage: 40V |
Produkt ist nicht verfügbar |
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P105LF4QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 105A; Idm: 315A; 168W Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 2.7mΩ Pulsed drain current: 315A Power dissipation: 168W Gate charge: 76nC Polarisation: unipolar Technology: EETMOS4 Drain current: 105A Kind of channel: enhanced Drain-source voltage: 40V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P105LF4QLK-5071 | SHINDENGEN | P105LF4QLK-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
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P105LF4QN-5071 | SHINDENGEN | P105LF4QN-5071 SMD N channel transistors |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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P105LF4QNK-5071 | SHINDENGEN | P105LF4QNK-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
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P10B28HP2-5071 | SHINDENGEN | P10B28HP2-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
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P10F50HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W Case: FTO-220AG (SC91) Mounting: THT Kind of package: bulk Drain-source voltage: 500V Drain current: 10A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 20nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 40A Power dissipation: 79W |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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P10F50HP2-5600 | Shindengen | MOSFET High Switching Speed High Voltage |
Produkt ist nicht verfügbar |
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P10F50HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W Case: FTO-220AG (SC91) Mounting: THT Kind of package: bulk Drain-source voltage: 500V Drain current: 10A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 20nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 40A Power dissipation: 79W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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P10F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W Case: FTO-220AG (SC91) Mounting: THT Kind of package: bulk Drain-source voltage: 600V Drain current: 10A On-state resistance: 0.8Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 23nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 40A Power dissipation: 85W |
auf Bestellung 348 Stücke: Lieferzeit 14-21 Tag (e) |
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P10F60HP2-5600 | Shindengen | MOSFET Mosfet |
Produkt ist nicht verfügbar |
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P10F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W Case: FTO-220AG (SC91) Mounting: THT Kind of package: bulk Drain-source voltage: 600V Drain current: 10A On-state resistance: 0.8Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 23nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 40A Power dissipation: 85W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 348 Stücke: Lieferzeit 7-14 Tag (e) |
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P120LF6GLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Case: LF (MO235B similar) Mounting: SMD Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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P120LF6GLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Case: LF (MO235B similar) Mounting: SMD Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P120LF6GMK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Case: LF (MO235B similar) Mounting: SMD Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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P120LF6GMK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Case: LF (MO235B similar) Mounting: SMD Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P126FP10SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 126A; Idm: 504A; 238W Polarisation: unipolar Pulsed drain current: 504A Power dissipation: 238W Gate charge: 160nC Technology: EETMOS3 Drain current: 126A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: FP (SC83 similar) On-state resistance: 4.8mΩ Mounting: SMD |
auf Bestellung 220 Stücke: Lieferzeit 14-21 Tag (e) |
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P126FP10SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 126A; Idm: 504A; 238W Polarisation: unipolar Pulsed drain current: 504A Power dissipation: 238W Gate charge: 160nC Technology: EETMOS3 Drain current: 126A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: FP (SC83 similar) On-state resistance: 4.8mΩ Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 220 Stücke: Lieferzeit 7-14 Tag (e) |
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P126FP7R5SNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; FP (SC83 similar) Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Case: FP (SC83 similar) Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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P126FP7R5SNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; FP (SC83 similar) Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Case: FP (SC83 similar) Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P12F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 12A; Idm: 48A; 90W Mounting: THT Case: FTO-220AG (SC91) Kind of package: bulk Type of transistor: N-MOSFET On-state resistance: 670mΩ Gate charge: 26.5nC Drain current: 12A Drain-source voltage: 600V Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 48A Polarisation: unipolar Power dissipation: 90W |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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P12F60HP2-5600 | Shindengen | MOSFET High Switching Speed High Voltage |
Produkt ist nicht verfügbar |
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P12F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 12A; Idm: 48A; 90W Mounting: THT Case: FTO-220AG (SC91) Kind of package: bulk Type of transistor: N-MOSFET On-state resistance: 670mΩ Gate charge: 26.5nC Drain current: 12A Drain-source voltage: 600V Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 48A Polarisation: unipolar Power dissipation: 90W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 350 Stücke: Lieferzeit 7-14 Tag (e) |
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P12FE7R5SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 12A; Idm: 36A; 24W Kind of package: reel; tape Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Gate charge: 16.6nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 36A Drain current: 12A On-state resistance: 63mΩ Type of transistor: N-MOSFET Drain-source voltage: 75V Application: automotive industry Power dissipation: 24W |
Produkt ist nicht verfügbar |
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P12FE7R5SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 12A; Idm: 36A; 24W Kind of package: reel; tape Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Gate charge: 16.6nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 36A Drain current: 12A On-state resistance: 63mΩ Type of transistor: N-MOSFET Drain-source voltage: 75V Application: automotive industry Power dissipation: 24W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P12LF10SLKD-5071 | SHINDENGEN |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 12A; Idm: 36A; 50W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Pulsed drain current: 36A Power dissipation: 50W Case: LF (MO235B similar) Gate-source voltage: ±10V On-state resistance: 42mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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P12LF10SLKD-5071 | SHINDENGEN |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 12A; Idm: 36A; 50W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Pulsed drain current: 36A Power dissipation: 50W Case: LF (MO235B similar) Gate-source voltage: ±10V On-state resistance: 42mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P13F28HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 280V; 13A; Idm: 52A; 65W Type of transistor: N-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: bulk Gate charge: 15nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Mounting: THT Case: FTO-220AG (SC91) Drain-source voltage: 280V Drain current: 13A On-state resistance: 0.3Ω |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
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P13F28HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 280V; 13A; Idm: 52A; 65W Type of transistor: N-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: bulk Gate charge: 15nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Mounting: THT Case: FTO-220AG (SC91) Drain-source voltage: 280V Drain current: 13A On-state resistance: 0.3Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 94 Stücke: Lieferzeit 7-14 Tag (e) |
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P13F50HP2-5600 | Shindengen | MOSFET High Switching Speed High Voltage |
Produkt ist nicht verfügbar |
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P13F50HP2-5600 | SHINDENGEN | P13F50HP2-5600 THT N channel transistors |
auf Bestellung 470 Stücke: Lieferzeit 7-14 Tag (e) |
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P13LA10EL-5070 | Shindengen | MOSFET 100V, 13A EETMOS POWER MOSFET |
Produkt ist nicht verfügbar |
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P13LA10EL-5070 | SHINDENGEN | P13LA10EL-5070 SMD N channel transistors |
Produkt ist nicht verfügbar |
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P140LF4QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Pulsed drain current: 560A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 1.42mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 4563 Stücke: Lieferzeit 14-21 Tag (e) |
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P140LF4QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Pulsed drain current: 560A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 1.42mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4563 Stücke: Lieferzeit 7-14 Tag (e) |
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P140LF4QLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Pulsed drain current: 560A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 1.42mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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P140LF4QLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Pulsed drain current: 560A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 1.42mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P140LF4QN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Pulsed drain current: 560A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 1.48mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 4919 Stücke: Lieferzeit 14-21 Tag (e) |
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P140LF4QN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Pulsed drain current: 560A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 1.48mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4919 Stücke: Lieferzeit 7-14 Tag (e) |
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P140LF4QNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Pulsed drain current: 560A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 1.48mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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P140LF4QNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Pulsed drain current: 560A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 1.48mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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P14FE6SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 14A; Idm: 42A; 24W Kind of package: reel; tape Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Gate charge: 16.3nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 42A Drain current: 14A On-state resistance: 39mΩ Type of transistor: N-MOSFET Drain-source voltage: 60V Application: automotive industry Power dissipation: 24W |
Produkt ist nicht verfügbar |
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P14FE6SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 14A; Idm: 42A; 24W Kind of package: reel; tape Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Gate charge: 16.3nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 42A Drain current: 14A On-state resistance: 39mΩ Type of transistor: N-MOSFET Drain-source voltage: 60V Application: automotive industry Power dissipation: 24W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P15F50HP2-5600 | Shindengen | MOSFET High Switching Speed High Voltage |
Produkt ist nicht verfügbar |
MV1011SC-5072 |
Hersteller: Shindengen
Switching Controllers LED Driver Power IC MV series
Switching Controllers LED Driver Power IC MV series
Produkt ist nicht verfügbar
MV1012SC-5072 |
Hersteller: Shindengen
Switching Controllers LED Driver Power IC MV series
Switching Controllers LED Driver Power IC MV series
Produkt ist nicht verfügbar
P0R5B60HP2-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A
Mounting: SMD
Case: FB (TO252AA)
Polarisation: unipolar
Power dissipation: 35W
Kind of package: reel; tape
Gate charge: 4.3nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 2A
Drain-source voltage: 600V
Drain current: 0.5A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A
Mounting: SMD
Case: FB (TO252AA)
Polarisation: unipolar
Power dissipation: 35W
Kind of package: reel; tape
Gate charge: 4.3nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 2A
Drain-source voltage: 600V
Drain current: 0.5A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
auf Bestellung 2999 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
95+ | 0.76 EUR |
127+ | 0.57 EUR |
136+ | 0.53 EUR |
236+ | 0.3 EUR |
249+ | 0.29 EUR |
P0R5B60HP2-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A
Mounting: SMD
Case: FB (TO252AA)
Polarisation: unipolar
Power dissipation: 35W
Kind of package: reel; tape
Gate charge: 4.3nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 2A
Drain-source voltage: 600V
Drain current: 0.5A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A
Mounting: SMD
Case: FB (TO252AA)
Polarisation: unipolar
Power dissipation: 35W
Kind of package: reel; tape
Gate charge: 4.3nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 2A
Drain-source voltage: 600V
Drain current: 0.5A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2999 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
95+ | 0.76 EUR |
127+ | 0.57 EUR |
136+ | 0.53 EUR |
236+ | 0.3 EUR |
249+ | 0.29 EUR |
P100FA7R5EN-5100 |
Hersteller: Shindengen
MOSFET 75V, 100A EETMOS POWER MOSFET
MOSFET 75V, 100A EETMOS POWER MOSFET
Produkt ist nicht verfügbar
P100FH4ENK-7071 |
Hersteller: Shindengen
MOSFET EETMOS series Power MOSFET SMD
MOSFET EETMOS series Power MOSFET SMD
Produkt ist nicht verfügbar
P100FP12SN-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 100A; Idm: 400A; 238W
Mounting: SMD
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 238W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 164nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: FP (SC83 similar)
Drain-source voltage: 120V
Drain current: 100A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 100A; Idm: 400A; 238W
Mounting: SMD
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 238W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 164nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: FP (SC83 similar)
Drain-source voltage: 120V
Drain current: 100A
Produkt ist nicht verfügbar
P100FP12SN-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 100A; Idm: 400A; 238W
Mounting: SMD
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 238W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 164nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: FP (SC83 similar)
Drain-source voltage: 120V
Drain current: 100A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 100A; Idm: 400A; 238W
Mounting: SMD
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 238W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 164nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: FP (SC83 similar)
Drain-source voltage: 120V
Drain current: 100A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P105LF4QL-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 105A; Idm: 315A; 168W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Pulsed drain current: 315A
Power dissipation: 168W
Gate charge: 76nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 105A
Kind of channel: enhanced
Drain-source voltage: 40V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 105A; Idm: 315A; 168W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Pulsed drain current: 315A
Power dissipation: 168W
Gate charge: 76nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 105A
Kind of channel: enhanced
Drain-source voltage: 40V
Produkt ist nicht verfügbar
P105LF4QL-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 105A; Idm: 315A; 168W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Pulsed drain current: 315A
Power dissipation: 168W
Gate charge: 76nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 105A
Kind of channel: enhanced
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 105A; Idm: 315A; 168W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Pulsed drain current: 315A
Power dissipation: 168W
Gate charge: 76nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 105A
Kind of channel: enhanced
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P105LF4QLK-5071 |
Hersteller: SHINDENGEN
P105LF4QLK-5071 SMD N channel transistors
P105LF4QLK-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P105LF4QN-5071 |
Hersteller: SHINDENGEN
P105LF4QN-5071 SMD N channel transistors
P105LF4QN-5071 SMD N channel transistors
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 2.86 EUR |
68+ | 1.06 EUR |
500+ | 0.66 EUR |
P105LF4QNK-5071 |
Hersteller: SHINDENGEN
P105LF4QNK-5071 SMD N channel transistors
P105LF4QNK-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P10B28HP2-5071 |
Hersteller: SHINDENGEN
P10B28HP2-5071 SMD N channel transistors
P10B28HP2-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P10F50HP2-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Drain-source voltage: 500V
Drain current: 10A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Power dissipation: 79W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Drain-source voltage: 500V
Drain current: 10A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Power dissipation: 79W
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 1.79 EUR |
P10F50HP2-5600 |
Hersteller: Shindengen
MOSFET High Switching Speed High Voltage
MOSFET High Switching Speed High Voltage
Produkt ist nicht verfügbar
P10F50HP2-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Drain-source voltage: 500V
Drain current: 10A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Power dissipation: 79W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Drain-source voltage: 500V
Drain current: 10A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Power dissipation: 79W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 1.79 EUR |
47+ | 1.52 EUR |
P10F60HP2-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Drain-source voltage: 600V
Drain current: 10A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 23nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Power dissipation: 85W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Drain-source voltage: 600V
Drain current: 10A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 23nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Power dissipation: 85W
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
52+ | 1.4 EUR |
57+ | 1.26 EUR |
71+ | 1.02 EUR |
75+ | 0.96 EUR |
P10F60HP2-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Drain-source voltage: 600V
Drain current: 10A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 23nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Power dissipation: 85W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Drain-source voltage: 600V
Drain current: 10A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 23nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Power dissipation: 85W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 348 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
52+ | 1.4 EUR |
57+ | 1.26 EUR |
71+ | 1.02 EUR |
75+ | 0.96 EUR |
P120LF6GLK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Case: LF (MO235B similar)
Mounting: SMD
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Case: LF (MO235B similar)
Mounting: SMD
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
P120LF6GLK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Case: LF (MO235B similar)
Mounting: SMD
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Case: LF (MO235B similar)
Mounting: SMD
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P120LF6GMK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Case: LF (MO235B similar)
Mounting: SMD
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Case: LF (MO235B similar)
Mounting: SMD
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
P120LF6GMK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Case: LF (MO235B similar)
Mounting: SMD
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Case: LF (MO235B similar)
Mounting: SMD
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P126FP10SN-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 126A; Idm: 504A; 238W
Polarisation: unipolar
Pulsed drain current: 504A
Power dissipation: 238W
Gate charge: 160nC
Technology: EETMOS3
Drain current: 126A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: FP (SC83 similar)
On-state resistance: 4.8mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 126A; Idm: 504A; 238W
Polarisation: unipolar
Pulsed drain current: 504A
Power dissipation: 238W
Gate charge: 160nC
Technology: EETMOS3
Drain current: 126A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: FP (SC83 similar)
On-state resistance: 4.8mΩ
Mounting: SMD
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 3.16 EUR |
26+ | 2.83 EUR |
34+ | 2.14 EUR |
36+ | 2.03 EUR |
P126FP10SN-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 126A; Idm: 504A; 238W
Polarisation: unipolar
Pulsed drain current: 504A
Power dissipation: 238W
Gate charge: 160nC
Technology: EETMOS3
Drain current: 126A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: FP (SC83 similar)
On-state resistance: 4.8mΩ
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 126A; Idm: 504A; 238W
Polarisation: unipolar
Pulsed drain current: 504A
Power dissipation: 238W
Gate charge: 160nC
Technology: EETMOS3
Drain current: 126A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: FP (SC83 similar)
On-state resistance: 4.8mΩ
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 220 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 3.16 EUR |
26+ | 2.83 EUR |
34+ | 2.14 EUR |
36+ | 2.03 EUR |
240+ | 2.02 EUR |
P126FP7R5SNK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FP (SC83 similar)
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Case: FP (SC83 similar)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FP (SC83 similar)
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Case: FP (SC83 similar)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
P126FP7R5SNK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FP (SC83 similar)
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Case: FP (SC83 similar)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FP (SC83 similar)
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Case: FP (SC83 similar)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P12F60HP2-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 12A; Idm: 48A; 90W
Mounting: THT
Case: FTO-220AG (SC91)
Kind of package: bulk
Type of transistor: N-MOSFET
On-state resistance: 670mΩ
Gate charge: 26.5nC
Drain current: 12A
Drain-source voltage: 600V
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Polarisation: unipolar
Power dissipation: 90W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 12A; Idm: 48A; 90W
Mounting: THT
Case: FTO-220AG (SC91)
Kind of package: bulk
Type of transistor: N-MOSFET
On-state resistance: 670mΩ
Gate charge: 26.5nC
Drain current: 12A
Drain-source voltage: 600V
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Polarisation: unipolar
Power dissipation: 90W
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
47+ | 1.53 EUR |
53+ | 1.37 EUR |
63+ | 1.14 EUR |
67+ | 1.07 EUR |
P12F60HP2-5600 |
Hersteller: Shindengen
MOSFET High Switching Speed High Voltage
MOSFET High Switching Speed High Voltage
Produkt ist nicht verfügbar
P12F60HP2-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 12A; Idm: 48A; 90W
Mounting: THT
Case: FTO-220AG (SC91)
Kind of package: bulk
Type of transistor: N-MOSFET
On-state resistance: 670mΩ
Gate charge: 26.5nC
Drain current: 12A
Drain-source voltage: 600V
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Polarisation: unipolar
Power dissipation: 90W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 12A; Idm: 48A; 90W
Mounting: THT
Case: FTO-220AG (SC91)
Kind of package: bulk
Type of transistor: N-MOSFET
On-state resistance: 670mΩ
Gate charge: 26.5nC
Drain current: 12A
Drain-source voltage: 600V
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Polarisation: unipolar
Power dissipation: 90W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 350 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
47+ | 1.53 EUR |
53+ | 1.37 EUR |
63+ | 1.14 EUR |
67+ | 1.07 EUR |
500+ | 1.06 EUR |
P12FE7R5SBK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 12A; Idm: 36A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.6nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 36A
Drain current: 12A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 75V
Application: automotive industry
Power dissipation: 24W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 12A; Idm: 36A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.6nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 36A
Drain current: 12A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 75V
Application: automotive industry
Power dissipation: 24W
Produkt ist nicht verfügbar
P12FE7R5SBK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 12A; Idm: 36A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.6nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 36A
Drain current: 12A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 75V
Application: automotive industry
Power dissipation: 24W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 12A; Idm: 36A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.6nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 36A
Drain current: 12A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 75V
Application: automotive industry
Power dissipation: 24W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P12LF10SLKD-5071 |
Hersteller: SHINDENGEN
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 12A; Idm: 36A; 50W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 36A
Power dissipation: 50W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 12A; Idm: 36A; 50W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 36A
Power dissipation: 50W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
P12LF10SLKD-5071 |
Hersteller: SHINDENGEN
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 12A; Idm: 36A; 50W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 36A
Power dissipation: 50W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 12A; Idm: 36A; 50W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 36A
Power dissipation: 50W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P13F28HP2-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 280V; 13A; Idm: 52A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 280V
Drain current: 13A
On-state resistance: 0.3Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 280V; 13A; Idm: 52A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 280V
Drain current: 13A
On-state resistance: 0.3Ω
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
54+ | 1.33 EUR |
60+ | 1.2 EUR |
72+ | 1 EUR |
76+ | 0.94 EUR |
P13F28HP2-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 280V; 13A; Idm: 52A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 280V
Drain current: 13A
On-state resistance: 0.3Ω
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 280V; 13A; Idm: 52A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 280V
Drain current: 13A
On-state resistance: 0.3Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 94 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
54+ | 1.33 EUR |
60+ | 1.2 EUR |
72+ | 1 EUR |
76+ | 0.94 EUR |
500+ | 0.93 EUR |
P13F50HP2-5600 |
Hersteller: Shindengen
MOSFET High Switching Speed High Voltage
MOSFET High Switching Speed High Voltage
Produkt ist nicht verfügbar
P13F50HP2-5600 |
Hersteller: SHINDENGEN
P13F50HP2-5600 THT N channel transistors
P13F50HP2-5600 THT N channel transistors
auf Bestellung 470 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
51+ | 1.42 EUR |
69+ | 1.04 EUR |
73+ | 0.99 EUR |
500+ | 0.97 EUR |
P13LA10EL-5070 |
Hersteller: Shindengen
MOSFET 100V, 13A EETMOS POWER MOSFET
MOSFET 100V, 13A EETMOS POWER MOSFET
Produkt ist nicht verfügbar
P13LA10EL-5070 |
Hersteller: SHINDENGEN
P13LA10EL-5070 SMD N channel transistors
P13LA10EL-5070 SMD N channel transistors
Produkt ist nicht verfügbar
P140LF4QL-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.42mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.42mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 4563 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
51+ | 1.42 EUR |
57+ | 1.27 EUR |
75+ | 0.96 EUR |
79+ | 0.92 EUR |
P140LF4QL-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.42mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.42mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4563 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
51+ | 1.42 EUR |
57+ | 1.27 EUR |
75+ | 0.96 EUR |
79+ | 0.92 EUR |
P140LF4QLK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.42mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.42mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
P140LF4QLK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.42mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.42mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P140LF4QN-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.48mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.48mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 4919 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
51+ | 1.42 EUR |
57+ | 1.27 EUR |
75+ | 0.96 EUR |
79+ | 0.92 EUR |
P140LF4QN-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.48mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.48mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4919 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
51+ | 1.42 EUR |
57+ | 1.27 EUR |
75+ | 0.96 EUR |
79+ | 0.92 EUR |
P140LF4QNK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.48mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.48mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 4.76 EUR |
P140LF4QNK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.48mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.48mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 4.76 EUR |
17+ | 4.2 EUR |
46+ | 1.56 EUR |
P14FE6SBK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 14A; Idm: 42A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.3nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 42A
Drain current: 14A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Application: automotive industry
Power dissipation: 24W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 14A; Idm: 42A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.3nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 42A
Drain current: 14A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Application: automotive industry
Power dissipation: 24W
Produkt ist nicht verfügbar
P14FE6SBK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 14A; Idm: 42A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.3nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 42A
Drain current: 14A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Application: automotive industry
Power dissipation: 24W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 14A; Idm: 42A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.3nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 42A
Drain current: 14A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Application: automotive industry
Power dissipation: 24W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P15F50HP2-5600 |
Hersteller: Shindengen
MOSFET High Switching Speed High Voltage
MOSFET High Switching Speed High Voltage
Produkt ist nicht verfügbar