Produkte > SHINDENGEN > Alle Produkte des Herstellers SHINDENGEN (2386) > Seite 27 nach 40
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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P140LF4QL-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Pulsed drain current: 560A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 1.42mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 4017 Stücke: Lieferzeit 14-21 Tag (e) |
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| P140LF4QLK-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Pulsed drain current: 560A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 1.42mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P140LF4QN-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Pulsed drain current: 560A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 1.48mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 4787 Stücke: Lieferzeit 14-21 Tag (e) |
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P140LF4QNK-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Pulsed drain current: 560A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 1.48mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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P15F50HP2-5600 | Shindengen |
MOSFETs High Switching Speed High Voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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P15F60HP2-5600 | Shindengen |
MOSFETs Mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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P15F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 60A Power dissipation: 95W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 0.49Ω Mounting: THT Gate charge: 37nC Kind of package: bulk Kind of channel: enhancement |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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P15F60HP2F-5600 | SHINDENGEN |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 60A Power dissipation: 95W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 34nC Kind of package: bulk Kind of channel: enhancement |
auf Bestellung 402 Stücke: Lieferzeit 14-21 Tag (e) |
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| P15F60HP2F-5600 | Shindengen |
MOSFETs Hi-PotMOS Power MOSFET Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P15LA12SL-5070 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 15A; Idm: 45A; 83W; LA On-state resistance: 50mΩ Mounting: SMD Pulsed drain current: 45A Power dissipation: 83W Gate charge: 38.5nC Polarisation: unipolar Technology: EETMOS3 Drain current: 15A Kind of channel: enhancement Drain-source voltage: 120V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P16B6SB-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Pulsed drain current: 48A Power dissipation: 20W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 17nC Technology: EETMOS3 |
auf Bestellung 2981 Stücke: Lieferzeit 14-21 Tag (e) |
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| P170FZ6QNKA-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 170A; Idm: 510A; 178W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 170A Pulsed drain current: 510A Power dissipation: 178W Case: FZ7 (TO263SC); FZ (TO236AB) Gate-source voltage: ±10V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P17F28HP2-5600 | Shindengen |
MOSFETs Hi-PotMOS Power MOSFET Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P18LA12SL-5070 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA On-state resistance: 44mΩ Mounting: SMD Pulsed drain current: 54A Power dissipation: 99W Gate charge: 47nC Polarisation: unipolar Technology: EETMOS3 Drain current: 18A Kind of channel: enhancement Drain-source voltage: 120V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P1R5B40HP2-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W Mounting: SMD Pulsed drain current: 6A Power dissipation: 35W Gate charge: 3.9nC Polarisation: unipolar Technology: Hi-PotMOS2 Drain current: 1.5A Kind of channel: enhancement Drain-source voltage: 400V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: FB (TO252AA) On-state resistance: 5Ω |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P20F50HP2-5600 | Shindengen |
MOSFETs High Switching Speed High Voltage |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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P21F28HP2-5600 | Shindengen |
MOSFETs 280V, 21A Hi-PotMOS MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| P22F10SN-5600 | Shindengen |
MOSFETs EETMOS series Power MOSFET Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P24B4SB-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 24A; Idm: 72A; 20W Pulsed drain current: 72A Power dissipation: 20W Gate charge: 16.5nC Polarisation: unipolar Technology: EETMOS3 Drain current: 24A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: FB (TO252AA) On-state resistance: 18.5mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P25B6EB-5071 | Shindengen |
MOSFET High Switching Speed |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P25LA12SL-5070 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 142W On-state resistance: 30mΩ Mounting: SMD Pulsed drain current: 75A Power dissipation: 142W Gate charge: 61nC Polarisation: unipolar Technology: EETMOS3 Drain current: 25A Kind of channel: enhancement Drain-source voltage: 120V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P26B10SL-5071 | Shindengen |
MOSFETs EETMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P26B10SL-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 26A; Idm: 78A; 44W Case: FB (TO252AA) Kind of package: reel; tape Technology: EETMOS3 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Gate charge: 43nC On-state resistance: 30mΩ Power dissipation: 44W Drain current: 26A Gate-source voltage: ±20V Pulsed drain current: 78A Drain-source voltage: 100V Polarisation: unipolar |
auf Bestellung 2173 Stücke: Lieferzeit 14-21 Tag (e) |
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| P26B10SLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 78A; 46W Case: FB (TO252AA) Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Gate charge: 43nC On-state resistance: 30mΩ Power dissipation: 46W Drain current: 26A Gate-source voltage: ±10V Pulsed drain current: 78A Drain-source voltage: 100V Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P26B10SN-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 26A; Idm: 78A; 44W Case: FB (TO252AA) Kind of package: reel; tape Technology: EETMOS3 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Gate charge: 35nC On-state resistance: 28mΩ Power dissipation: 44W Drain current: 26A Gate-source voltage: ±20V Pulsed drain current: 78A Drain-source voltage: 100V Polarisation: unipolar |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P26F28HP2-5600 | Shindengen |
MOSFETs 280V, 26A Hi-PotMOS MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| P26FE10SLK-5061 | Shindengen |
MOSFET EETMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P2B60HP2F-5071 | Shindengen |
MOSFETs Hi-PotMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P30B10EL-5071 | Shindengen |
MOSFETs EETMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P30FE4SLK-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 30A; Idm: 90A; 44W Case: FE (TO252AB similar) Kind of package: reel; tape Pulsed drain current: 90A Power dissipation: 44W Gate charge: 44nC Polarisation: unipolar Technology: EETMOS3 Drain current: 30A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P32F12SN-5600 | Shindengen |
MOSFETs EETMOS series Power MOSFET Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P32FG15SL-5071 | Shindengen |
MOSFETs EETMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P34F6EL-5600 | Shindengen |
MOSFETs 60V, 34A EETMOS POWER MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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P34F6EL-5600 | SHINDENGEN |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 34A; Idm: 136A; 35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 34A Pulsed drain current: 136A Power dissipation: 35W Case: FTO-220AG (SC91) Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 41nC Kind of package: bulk Kind of channel: enhancement Technology: EETMOS2 |
auf Bestellung 164 Stücke: Lieferzeit 14-21 Tag (e) |
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| P34F6EL-5600 | Shindengen | MOSFET DIS.34A 60V N-CH FTO-220AG Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P36F25HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 36A; 77W; FTO-220AG (SC91) Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 36A Power dissipation: 77W Case: FTO-220AG (SC91) Gate-source voltage: ±10V On-state resistance: 0.12Ω Mounting: THT Gate charge: 35nC Kind of package: bulk Kind of channel: enhancement |
auf Bestellung 245 Stücke: Lieferzeit 14-21 Tag (e) |
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P36F28HP2-5600 | Shindengen |
MOSFETs 280V, 36A EETMOS POWER MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| P39LF6QTKD-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 39A; Idm: 117A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 39A Pulsed drain current: 117A Power dissipation: 62W Case: LF (MO235B similar) Gate-source voltage: ±10V On-state resistance: 10.4mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P3F60HP2-5600 | Shindengen |
MOSFETs High Switching Speed High Voltage |
auf Bestellung 74 Stücke: Lieferzeit 10-14 Tag (e) |
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P40B10SL-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W Case: FB (TO252AA) Kind of package: reel; tape Technology: EETMOS3 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Gate charge: 66nC On-state resistance: 18.5mΩ Power dissipation: 62.5W Drain current: 40A Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 100V Polarisation: unipolar |
auf Bestellung 1419 Stücke: Lieferzeit 14-21 Tag (e) |
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P40B10SN-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W Case: FB (TO252AA) Kind of package: reel; tape Technology: EETMOS3 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Gate charge: 56nC On-state resistance: 16.8mΩ Power dissipation: 62.5W Drain current: 40A Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 100V Polarisation: unipolar |
auf Bestellung 2993 Stücke: Lieferzeit 14-21 Tag (e) |
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P40B6SL-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 40A; Idm: 120A; 44W Case: FB (TO252AA) Mounting: SMD Kind of package: reel; tape Pulsed drain current: 120A Power dissipation: 44W Gate charge: 43nC Polarisation: unipolar Technology: EETMOS3 Drain current: 40A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 12mΩ |
auf Bestellung 834 Stücke: Lieferzeit 14-21 Tag (e) |
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| P40F10SN-5600 | Shindengen |
MOSFETs EETMOS series Power MOSFET Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P40F12SN-5600 | Shindengen |
MOSFETs EETMOS series Power MOSFET Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P42F6EN-5600 | Shindengen |
MOSFET 60V, 42A EETMOS POWER MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| P4B40HP2-5071 | Shindengen |
MOSFETs Hi-PotMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| P4B40HP2-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 4A; Idm: 16A; 35W Mounting: SMD Pulsed drain current: 16A Power dissipation: 35W Gate charge: 6.5nC Polarisation: unipolar Technology: Hi-PotMOS2 Drain current: 4A Kind of channel: enhancement Drain-source voltage: 400V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: FB (TO252AA) On-state resistance: 1.9Ω |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P4F60HP2-5600 | Shindengen |
MOSFETs Mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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P4F90VX3-5600 | SHINDENGEN |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 4A; Idm: 12A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 3.4Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement Pulsed drain current: 12A Power dissipation: 79W Gate charge: 21nC Application: automotive industry |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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| P50F10SN-5600 | Shindengen |
MOSFETs EETMOS series Power MOSFET Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P50F10SN-5600 | SHINDENGEN |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 51W Case: FTO-220AG (SC91) Mounting: THT Kind of package: bulk Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 114nC On-state resistance: 8.7mΩ Gate-source voltage: ±20V Drain current: 50A Drain-source voltage: 100V Pulsed drain current: 200A Power dissipation: 51W Technology: EETMOS3 Kind of channel: enhancement |
auf Bestellung 221 Stücke: Lieferzeit 14-21 Tag (e) |
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P55F6EN-5600 | Shindengen |
MOSFETs 60V, 55A EETMOS POWER MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| P56LA4SN-5070 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 56A; Idm: 168A; 99W; LA Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 56A Pulsed drain current: 168A Power dissipation: 99W Case: LA Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P5B52HP2-5071 | Shindengen |
MOSFET Hi Voltage Low Noise |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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P5F50HP2-5600 | Shindengen |
MOSFETs High Switching Speed High Voltage |
auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |
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P5F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 5A; Idm: 20A; 65W Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 15nC On-state resistance: 1.4Ω Drain current: 5A Pulsed drain current: 20A Gate-source voltage: ±30V Power dissipation: 65W Drain-source voltage: 600V Kind of package: bulk Kind of channel: enhancement Case: FTO-220AG (SC91) Technology: Hi-PotMOS2 |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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P5F60HP2-5600 | Shindengen |
MOSFETs High Switching Speed High Voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| P60B10SB-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; FB (TO252AA) Polarisation: unipolar Technology: EETMOS3 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Case: FB (TO252AA) Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P60B4EL-5071 | Shindengen |
MOSFETs 40V, 60A EETMOS POWER MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| P60B6EL-5071 | Shindengen |
MOSFETs EETMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| P140LF4QL-5071 |
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Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.42mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.42mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4017 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 72+ | 1.19 EUR |
| 82+ | 1.05 EUR |
| 91+ | 0.94 EUR |
| 101+ | 0.84 EUR |
| 500+ | 0.83 EUR |
| P140LF4QLK-5071 |
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Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.42mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.42mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P140LF4QN-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.48mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.48mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4787 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 75+ | 1.14 EUR |
| 83+ | 1.04 EUR |
| 94+ | 0.92 EUR |
| 103+ | 0.82 EUR |
| P140LF4QNK-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.48mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.48mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P15F50HP2-5600 |
![]() |
Hersteller: Shindengen
MOSFETs High Switching Speed High Voltage
MOSFETs High Switching Speed High Voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P15F60HP2-5600 |
![]() |
Hersteller: Shindengen
MOSFETs Mosfet
MOSFETs Mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P15F60HP2-5600 |
![]() |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 37nC
Kind of package: bulk
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 37nC
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 2.81 EUR |
| 34+ | 2.53 EUR |
| 39+ | 2.23 EUR |
| 100+ | 2.01 EUR |
| P15F60HP2F-5600 |
![]() |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: bulk
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 402 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 42+ | 2.06 EUR |
| 46+ | 1.86 EUR |
| 53+ | 1.63 EUR |
| 100+ | 1.62 EUR |
| P15F60HP2F-5600 |
![]() |
Hersteller: Shindengen
MOSFETs Hi-PotMOS Power MOSFET Through Hole
MOSFETs Hi-PotMOS Power MOSFET Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P15LA12SL-5070 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 15A; Idm: 45A; 83W; LA
On-state resistance: 50mΩ
Mounting: SMD
Pulsed drain current: 45A
Power dissipation: 83W
Gate charge: 38.5nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 15A; Idm: 45A; 83W; LA
On-state resistance: 50mΩ
Mounting: SMD
Pulsed drain current: 45A
Power dissipation: 83W
Gate charge: 38.5nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P16B6SB-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Pulsed drain current: 48A
Power dissipation: 20W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17nC
Technology: EETMOS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Pulsed drain current: 48A
Power dissipation: 20W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17nC
Technology: EETMOS3
auf Bestellung 2981 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 123+ | 0.69 EUR |
| 138+ | 0.62 EUR |
| 155+ | 0.55 EUR |
| 500+ | 0.49 EUR |
| P170FZ6QNKA-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 170A; Idm: 510A; 178W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 170A
Pulsed drain current: 510A
Power dissipation: 178W
Case: FZ7 (TO263SC); FZ (TO236AB)
Gate-source voltage: ±10V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 170A; Idm: 510A; 178W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 170A
Pulsed drain current: 510A
Power dissipation: 178W
Case: FZ7 (TO263SC); FZ (TO236AB)
Gate-source voltage: ±10V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P17F28HP2-5600 |
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Hersteller: Shindengen
MOSFETs Hi-PotMOS Power MOSFET Through Hole
MOSFETs Hi-PotMOS Power MOSFET Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P18LA12SL-5070 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA
On-state resistance: 44mΩ
Mounting: SMD
Pulsed drain current: 54A
Power dissipation: 99W
Gate charge: 47nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA
On-state resistance: 44mΩ
Mounting: SMD
Pulsed drain current: 54A
Power dissipation: 99W
Gate charge: 47nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P1R5B40HP2-5071 |
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Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W
Mounting: SMD
Pulsed drain current: 6A
Power dissipation: 35W
Gate charge: 3.9nC
Polarisation: unipolar
Technology: Hi-PotMOS2
Drain current: 1.5A
Kind of channel: enhancement
Drain-source voltage: 400V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: FB (TO252AA)
On-state resistance: 5Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W
Mounting: SMD
Pulsed drain current: 6A
Power dissipation: 35W
Gate charge: 3.9nC
Polarisation: unipolar
Technology: Hi-PotMOS2
Drain current: 1.5A
Kind of channel: enhancement
Drain-source voltage: 400V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: FB (TO252AA)
On-state resistance: 5Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P20F50HP2-5600 |
![]() |
Hersteller: Shindengen
MOSFETs High Switching Speed High Voltage
MOSFETs High Switching Speed High Voltage
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.22 EUR |
| 10+ | 8.13 EUR |
| 100+ | 6.53 EUR |
| 500+ | 5.82 EUR |
| 1000+ | 4.99 EUR |
| 2500+ | 4.69 EUR |
| P21F28HP2-5600 |
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Hersteller: Shindengen
MOSFETs 280V, 21A Hi-PotMOS MOSFET
MOSFETs 280V, 21A Hi-PotMOS MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P22F10SN-5600 |
![]() |
Hersteller: Shindengen
MOSFETs EETMOS series Power MOSFET Through Hole
MOSFETs EETMOS series Power MOSFET Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P24B4SB-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 24A; Idm: 72A; 20W
Pulsed drain current: 72A
Power dissipation: 20W
Gate charge: 16.5nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: FB (TO252AA)
On-state resistance: 18.5mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 24A; Idm: 72A; 20W
Pulsed drain current: 72A
Power dissipation: 20W
Gate charge: 16.5nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: FB (TO252AA)
On-state resistance: 18.5mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P25B6EB-5071 |
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Hersteller: Shindengen
MOSFET High Switching Speed
MOSFET High Switching Speed
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P25LA12SL-5070 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 142W
On-state resistance: 30mΩ
Mounting: SMD
Pulsed drain current: 75A
Power dissipation: 142W
Gate charge: 61nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 142W
On-state resistance: 30mΩ
Mounting: SMD
Pulsed drain current: 75A
Power dissipation: 142W
Gate charge: 61nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P26B10SL-5071 |
![]() |
Hersteller: Shindengen
MOSFETs EETMOS series Power MOSFET SMD
MOSFETs EETMOS series Power MOSFET SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P26B10SL-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 26A; Idm: 78A; 44W
Case: FB (TO252AA)
Kind of package: reel; tape
Technology: EETMOS3
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 43nC
On-state resistance: 30mΩ
Power dissipation: 44W
Drain current: 26A
Gate-source voltage: ±20V
Pulsed drain current: 78A
Drain-source voltage: 100V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 26A; Idm: 78A; 44W
Case: FB (TO252AA)
Kind of package: reel; tape
Technology: EETMOS3
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 43nC
On-state resistance: 30mΩ
Power dissipation: 44W
Drain current: 26A
Gate-source voltage: ±20V
Pulsed drain current: 78A
Drain-source voltage: 100V
Polarisation: unipolar
auf Bestellung 2173 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 122+ | 0.7 EUR |
| 136+ | 0.63 EUR |
| 153+ | 0.56 EUR |
| 500+ | 0.5 EUR |
| P26B10SLK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 78A; 46W
Case: FB (TO252AA)
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 43nC
On-state resistance: 30mΩ
Power dissipation: 46W
Drain current: 26A
Gate-source voltage: ±10V
Pulsed drain current: 78A
Drain-source voltage: 100V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 78A; 46W
Case: FB (TO252AA)
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 43nC
On-state resistance: 30mΩ
Power dissipation: 46W
Drain current: 26A
Gate-source voltage: ±10V
Pulsed drain current: 78A
Drain-source voltage: 100V
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P26B10SN-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 26A; Idm: 78A; 44W
Case: FB (TO252AA)
Kind of package: reel; tape
Technology: EETMOS3
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 35nC
On-state resistance: 28mΩ
Power dissipation: 44W
Drain current: 26A
Gate-source voltage: ±20V
Pulsed drain current: 78A
Drain-source voltage: 100V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 26A; Idm: 78A; 44W
Case: FB (TO252AA)
Kind of package: reel; tape
Technology: EETMOS3
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 35nC
On-state resistance: 28mΩ
Power dissipation: 44W
Drain current: 26A
Gate-source voltage: ±20V
Pulsed drain current: 78A
Drain-source voltage: 100V
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P26F28HP2-5600 |
![]() |
Hersteller: Shindengen
MOSFETs 280V, 26A Hi-PotMOS MOSFET
MOSFETs 280V, 26A Hi-PotMOS MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P26FE10SLK-5061 |
![]() |
Hersteller: Shindengen
MOSFET EETMOS series Power MOSFET SMD
MOSFET EETMOS series Power MOSFET SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P2B60HP2F-5071 |
![]() |
Hersteller: Shindengen
MOSFETs Hi-PotMOS series Power MOSFET SMD
MOSFETs Hi-PotMOS series Power MOSFET SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P30B10EL-5071 |
![]() |
Hersteller: Shindengen
MOSFETs EETMOS series Power MOSFET SMD
MOSFETs EETMOS series Power MOSFET SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P30FE4SLK-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 30A; Idm: 90A; 44W
Case: FE (TO252AB similar)
Kind of package: reel; tape
Pulsed drain current: 90A
Power dissipation: 44W
Gate charge: 44nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 30A; Idm: 90A; 44W
Case: FE (TO252AB similar)
Kind of package: reel; tape
Pulsed drain current: 90A
Power dissipation: 44W
Gate charge: 44nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P32F12SN-5600 |
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Hersteller: Shindengen
MOSFETs EETMOS series Power MOSFET Through Hole
MOSFETs EETMOS series Power MOSFET Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P32FG15SL-5071 |
![]() |
Hersteller: Shindengen
MOSFETs EETMOS series Power MOSFET SMD
MOSFETs EETMOS series Power MOSFET SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P34F6EL-5600 |
![]() |
Hersteller: Shindengen
MOSFETs 60V, 34A EETMOS POWER MOSFET
MOSFETs 60V, 34A EETMOS POWER MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P34F6EL-5600 |
![]() |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 34A; Idm: 136A; 35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 35W
Case: FTO-220AG (SC91)
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: bulk
Kind of channel: enhancement
Technology: EETMOS2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 34A; Idm: 136A; 35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 35W
Case: FTO-220AG (SC91)
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: bulk
Kind of channel: enhancement
Technology: EETMOS2
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 66+ | 1.3 EUR |
| 85+ | 1.01 EUR |
| 94+ | 0.9 EUR |
| 107+ | 0.8 EUR |
| P34F6EL-5600 |
Hersteller: Shindengen
MOSFET DIS.34A 60V N-CH FTO-220AG Транзистори
MOSFET DIS.34A 60V N-CH FTO-220AG Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P36F25HP2-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 36A; 77W; FTO-220AG (SC91)
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 36A
Power dissipation: 77W
Case: FTO-220AG (SC91)
Gate-source voltage: ±10V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 35nC
Kind of package: bulk
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 36A; 77W; FTO-220AG (SC91)
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 36A
Power dissipation: 77W
Case: FTO-220AG (SC91)
Gate-source voltage: ±10V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 35nC
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 55+ | 1.57 EUR |
| 61+ | 1.42 EUR |
| 69+ | 1.24 EUR |
| 100+ | 1.11 EUR |
| P36F28HP2-5600 |
![]() |
Hersteller: Shindengen
MOSFETs 280V, 36A EETMOS POWER MOSFET
MOSFETs 280V, 36A EETMOS POWER MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P39LF6QTKD-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; Idm: 117A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Pulsed drain current: 117A
Power dissipation: 62W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; Idm: 117A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Pulsed drain current: 117A
Power dissipation: 62W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P3F60HP2-5600 |
![]() |
Hersteller: Shindengen
MOSFETs High Switching Speed High Voltage
MOSFETs High Switching Speed High Voltage
auf Bestellung 74 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.57 EUR |
| 10+ | 3.17 EUR |
| 100+ | 2.49 EUR |
| 500+ | 2.09 EUR |
| 1000+ | 1.8 EUR |
| 2500+ | 1.71 EUR |
| 5000+ | 1.7 EUR |
| P40B10SL-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W
Case: FB (TO252AA)
Kind of package: reel; tape
Technology: EETMOS3
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 66nC
On-state resistance: 18.5mΩ
Power dissipation: 62.5W
Drain current: 40A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 100V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W
Case: FB (TO252AA)
Kind of package: reel; tape
Technology: EETMOS3
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 66nC
On-state resistance: 18.5mΩ
Power dissipation: 62.5W
Drain current: 40A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 100V
Polarisation: unipolar
auf Bestellung 1419 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 87+ | 0.99 EUR |
| 97+ | 0.88 EUR |
| 110+ | 0.77 EUR |
| 122+ | 0.7 EUR |
| 500+ | 0.69 EUR |
| P40B10SN-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W
Case: FB (TO252AA)
Kind of package: reel; tape
Technology: EETMOS3
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 56nC
On-state resistance: 16.8mΩ
Power dissipation: 62.5W
Drain current: 40A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 100V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W
Case: FB (TO252AA)
Kind of package: reel; tape
Technology: EETMOS3
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 56nC
On-state resistance: 16.8mΩ
Power dissipation: 62.5W
Drain current: 40A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 100V
Polarisation: unipolar
auf Bestellung 2993 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 65+ | 1.31 EUR |
| 102+ | 0.84 EUR |
| 115+ | 0.74 EUR |
| 128+ | 0.67 EUR |
| 500+ | 0.62 EUR |
| P40B6SL-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 40A; Idm: 120A; 44W
Case: FB (TO252AA)
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 120A
Power dissipation: 44W
Gate charge: 43nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 40A; Idm: 120A; 44W
Case: FB (TO252AA)
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 120A
Power dissipation: 44W
Gate charge: 43nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 12mΩ
auf Bestellung 834 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 125+ | 0.69 EUR |
| 138+ | 0.62 EUR |
| 156+ | 0.55 EUR |
| 500+ | 0.49 EUR |
| P40F10SN-5600 |
![]() |
Hersteller: Shindengen
MOSFETs EETMOS series Power MOSFET Through Hole
MOSFETs EETMOS series Power MOSFET Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P40F12SN-5600 |
![]() |
Hersteller: Shindengen
MOSFETs EETMOS series Power MOSFET Through Hole
MOSFETs EETMOS series Power MOSFET Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P42F6EN-5600 |
![]() |
Hersteller: Shindengen
MOSFET 60V, 42A EETMOS POWER MOSFET
MOSFET 60V, 42A EETMOS POWER MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P4B40HP2-5071 |
![]() |
Hersteller: Shindengen
MOSFETs Hi-PotMOS series Power MOSFET SMD
MOSFETs Hi-PotMOS series Power MOSFET SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P4B40HP2-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 4A; Idm: 16A; 35W
Mounting: SMD
Pulsed drain current: 16A
Power dissipation: 35W
Gate charge: 6.5nC
Polarisation: unipolar
Technology: Hi-PotMOS2
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 400V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: FB (TO252AA)
On-state resistance: 1.9Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 4A; Idm: 16A; 35W
Mounting: SMD
Pulsed drain current: 16A
Power dissipation: 35W
Gate charge: 6.5nC
Polarisation: unipolar
Technology: Hi-PotMOS2
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 400V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: FB (TO252AA)
On-state resistance: 1.9Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P4F60HP2-5600 |
![]() |
Hersteller: Shindengen
MOSFETs Mosfet
MOSFETs Mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P4F90VX3-5600 |
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Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4A; Idm: 12A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Pulsed drain current: 12A
Power dissipation: 79W
Gate charge: 21nC
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4A; Idm: 12A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Pulsed drain current: 12A
Power dissipation: 79W
Gate charge: 21nC
Application: automotive industry
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 6.08 EUR |
| P50F10SN-5600 |
![]() |
Hersteller: Shindengen
MOSFETs EETMOS series Power MOSFET Through Hole
MOSFETs EETMOS series Power MOSFET Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P50F10SN-5600 |
![]() |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 51W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 114nC
On-state resistance: 8.7mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 100V
Pulsed drain current: 200A
Power dissipation: 51W
Technology: EETMOS3
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 51W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 114nC
On-state resistance: 8.7mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 100V
Pulsed drain current: 200A
Power dissipation: 51W
Technology: EETMOS3
Kind of channel: enhancement
auf Bestellung 221 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 46+ | 1.89 EUR |
| 50+ | 1.7 EUR |
| 57+ | 1.51 EUR |
| 100+ | 1.34 EUR |
| P55F6EN-5600 |
![]() |
Hersteller: Shindengen
MOSFETs 60V, 55A EETMOS POWER MOSFET
MOSFETs 60V, 55A EETMOS POWER MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P56LA4SN-5070 |
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Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 56A; Idm: 168A; 99W; LA
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 168A
Power dissipation: 99W
Case: LA
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 56A; Idm: 168A; 99W; LA
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 168A
Power dissipation: 99W
Case: LA
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P5B52HP2-5071 |
![]() |
Hersteller: Shindengen
MOSFET Hi Voltage Low Noise
MOSFET Hi Voltage Low Noise
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P5F50HP2-5600 |
![]() |
Hersteller: Shindengen
MOSFETs High Switching Speed High Voltage
MOSFETs High Switching Speed High Voltage
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.61 EUR |
| 10+ | 3.19 EUR |
| 100+ | 2.53 EUR |
| 500+ | 2.12 EUR |
| 1000+ | 1.82 EUR |
| 2500+ | 1.73 EUR |
| 5000+ | 1.71 EUR |
| P5F60HP2-5600 |
![]() |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 5A; Idm: 20A; 65W
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 1.4Ω
Drain current: 5A
Pulsed drain current: 20A
Gate-source voltage: ±30V
Power dissipation: 65W
Drain-source voltage: 600V
Kind of package: bulk
Kind of channel: enhancement
Case: FTO-220AG (SC91)
Technology: Hi-PotMOS2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 5A; Idm: 20A; 65W
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 1.4Ω
Drain current: 5A
Pulsed drain current: 20A
Gate-source voltage: ±30V
Power dissipation: 65W
Drain-source voltage: 600V
Kind of package: bulk
Kind of channel: enhancement
Case: FTO-220AG (SC91)
Technology: Hi-PotMOS2
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 36+ | 2.37 EUR |
| P5F60HP2-5600 |
![]() |
Hersteller: Shindengen
MOSFETs High Switching Speed High Voltage
MOSFETs High Switching Speed High Voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P60B10SB-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FB (TO252AA)
Polarisation: unipolar
Technology: EETMOS3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: FB (TO252AA)
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FB (TO252AA)
Polarisation: unipolar
Technology: EETMOS3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: FB (TO252AA)
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P60B4EL-5071 |
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Hersteller: Shindengen
MOSFETs 40V, 60A EETMOS POWER MOSFET
MOSFETs 40V, 60A EETMOS POWER MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P60B6EL-5071 |
![]() |
Hersteller: Shindengen
MOSFETs EETMOS series Power MOSFET SMD
MOSFETs EETMOS series Power MOSFET SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH



















