Produkte > SHINDENGEN > Alle Produkte des Herstellers SHINDENGEN (2456) > Seite 27 nach 41
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MV1001SC-5072 | Shindengen |
 LED Lighting Drivers LED Driver IC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
MV1002SC-5072 | Shindengen |
LED Lighting Driver ICs LED Driver IC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| MV1011SC-5072 | Shindengen |
Switching Controllers LED Driver Power IC MV series |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MV1012SC-5072 | Shindengen |
Switching Controllers LED Driver Power IC MV series |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
 |
MV2002SG-3072 | Shindengen | LED Lighting Drivers LED Driver IC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
MV2052SG-3072 | Shindengen | LED Lighting Drivers LED Driver IC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| NSD03A40 | Shindengen |
|
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NSD03C20 | SHINDENGEN |
auf Bestellung 1406 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSF03A60 | SHINDENGEN |
auf Bestellung 3750 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
P0R5B60HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A Case: FB (TO252AA) Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: Hi-PotMOS2 Type of transistor: N-MOSFET Gate charge: 4.3nC Drain current: 0.5A Pulsed drain current: 2A On-state resistance: 10Ω Gate-source voltage: ±30V Power dissipation: 35W Drain-source voltage: 600V Polarisation: unipolar |
auf Bestellung 2975 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| P0R5B60HP2-5071 | Shindengen |
MOSFETs Hi-PotMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
 |
P100FA7R5EN-5100 | Shindengen |
MOSFETs 75V, 100A EETMOS POWER MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| P100FH4ENK-7071 | Shindengen |
MOSFETs EETMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P105LF4QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 105A; Idm: 315A; 168W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 40V Drain current: 105A Pulsed drain current: 315A Power dissipation: 168W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 76nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P105LF4QLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 105A; Idm: 315A; 168W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 40V Drain current: 105A Pulsed drain current: 315A Power dissipation: 168W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 76nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P105LF4QNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 105A; Idm: 315A; 168W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 40V Drain current: 105A Pulsed drain current: 315A Power dissipation: 168W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
|
|
P10F50HP2-5600 | Shindengen |
MOSFETs High Switching Speed High Voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
 |
P10F50HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W Case: FTO-220AG (SC91) Mounting: THT Kind of package: bulk Pulsed drain current: 40A Power dissipation: 79W Gate charge: 20nC Polarisation: unipolar Technology: Hi-PotMOS2 Drain current: 10A Kind of channel: enhancement Drain-source voltage: 500V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 0.75Ω |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
P10F60HP2-5600 | Shindengen |
MOSFETs Mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
 |
P10F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Pulsed drain current: 40A Power dissipation: 85W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Gate charge: 23nC Kind of package: bulk Kind of channel: enhancement Technology: Hi-PotMOS2 |
auf Bestellung 219 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
 |
P126FP10SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 126A; Idm: 504A; 238W Mounting: SMD Case: FP (SC83 similar) Power dissipation: 238W Kind of package: reel; tape Pulsed drain current: 504A Gate charge: 160nC Polarisation: unipolar Technology: EETMOS3 Drain current: 126A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 4.8mΩ |
auf Bestellung 209 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
P12F60HP2-5600 | Shindengen |
MOSFETs High Switching Speed High Voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| P12FE7R5SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 12A; Idm: 36A; 24W Pulsed drain current: 36A Power dissipation: 24W Gate charge: 16.6nC Polarisation: unipolar Technology: EETMOS3 Drain current: 12A Kind of channel: enhancement Drain-source voltage: 75V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: FE (TO252AB similar) On-state resistance: 63mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
 |
P13F28HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 280V; 13A; Idm: 52A; 65W Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 15nC On-state resistance: 0.3Ω Drain current: 13A Pulsed drain current: 52A Gate-source voltage: ±30V Power dissipation: 65W Drain-source voltage: 280V Kind of package: bulk Kind of channel: enhancement Case: FTO-220AG (SC91) Technology: Hi-PotMOS2 |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| P13F28HP2-5600 | Shindengen |
MOSFETs Hi-PotMOS Power MOSFET Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
|
|
P13F50HP2-5600 | Shindengen |
MOSFETs High Switching Speed High Voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| P13LA10EL-5070 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 100V; 13A; Idm: 52A; 1.7W Case: LA Mounting: SMD Kind of package: reel; tape Pulsed drain current: 52A Power dissipation: 1.7W Gate charge: 57nC Polarisation: unipolar Technology: EETMOS2 Drain current: 13A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 20mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
 |
P13LA10EL-5070 | Shindengen | MOSFETs 100V, 13A EETMOS POWER MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
 |
P140LF4QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 1.42mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 560A |
auf Bestellung 3999 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| P140LF4QLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Pulsed drain current: 560A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 1.42mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
 |
P140LF4QN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 1.48mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 560A |
auf Bestellung 4787 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
 |
P140LF4QNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 1.48mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 560A Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| P14FE6SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 14A; Idm: 42A; 24W Pulsed drain current: 42A Power dissipation: 24W Gate charge: 16.3nC Polarisation: unipolar Technology: EETMOS3 Drain current: 14A Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: FE (TO252AB similar) On-state resistance: 39mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
|
|
P15F50HP2-5600 | Shindengen |
MOSFETs High Switching Speed High Voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
P15F60HP2-5600 | Shindengen |
MOSFETs Mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
 |
P15F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 60A Power dissipation: 95W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 0.49Ω Mounting: THT Gate charge: 37nC Kind of package: bulk Kind of channel: enhancement |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
 |
P15F60HP2F-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 60A Power dissipation: 95W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 34nC Kind of package: bulk Kind of channel: enhancement |
auf Bestellung 402 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| P15F60HP2F-5600 | Shindengen |
MOSFETs Hi-PotMOS Power MOSFET Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P15LA12SL-5070 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 15A; Idm: 45A; 83W; LA Case: LA Mounting: SMD Kind of package: reel; tape Pulsed drain current: 45A Power dissipation: 83W Gate charge: 38.5nC Polarisation: unipolar Technology: EETMOS3 Drain current: 15A Kind of channel: enhancement Drain-source voltage: 120V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 50mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
 |
P16B6SB-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Pulsed drain current: 48A Power dissipation: 20W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 17nC Technology: EETMOS3 |
auf Bestellung 2981 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| P16B6SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 48A; 23W Pulsed drain current: 48A Power dissipation: 23W Gate charge: 17nC Polarisation: unipolar Drain current: 16A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape Case: FB (TO252AA) On-state resistance: 37mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P170FZ6QNKA-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 170A; Idm: 510A; 178W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 170A Pulsed drain current: 510A Power dissipation: 178W Case: FZ7 (TO263SC); FZ (TO236AB) Gate-source voltage: ±10V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P17F28HP2-5600 | Shindengen |
MOSFETs Hi-PotMOS Power MOSFET Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P18LA12SL-5070 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA Case: LA Mounting: SMD Kind of package: reel; tape Pulsed drain current: 54A Power dissipation: 99W Gate charge: 47nC Polarisation: unipolar Technology: EETMOS3 Drain current: 18A Kind of channel: enhancement Drain-source voltage: 120V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 44mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P19LA10SL-5070 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 19A; Idm: 57A; 83W; LA Case: LA Mounting: SMD Kind of package: reel; tape Pulsed drain current: 57A Power dissipation: 83W Gate charge: 38nC Polarisation: unipolar Technology: EETMOS3 Drain current: 19A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 35mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P1R5B40HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W Mounting: SMD Pulsed drain current: 6A Power dissipation: 35W Gate charge: 3.9nC Polarisation: unipolar Technology: Hi-PotMOS2 Drain current: 1.5A Kind of channel: enhancement Drain-source voltage: 400V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: FB (TO252AA) On-state resistance: 5Ω |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
|
|
P20F50HP2-5600 | Shindengen |
MOSFETs High Switching Speed High Voltage |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
P21F28HP2-5600 | Shindengen |
MOSFETs 280V, 21A Hi-PotMOS MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| P22F10SN-5600 | Shindengen |
MOSFETs EETMOS series Power MOSFET Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
 |
P22F10SN-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 22A; Idm: 66A; 35W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Pulsed drain current: 66A Power dissipation: 35W Case: FTO-220AG (SC91) Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 34nC Kind of package: bulk Kind of channel: enhancement |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| P22FE4SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 22A; Idm: 66A; 24W Pulsed drain current: 66A Power dissipation: 24W Gate charge: 16.5nC Polarisation: unipolar Technology: EETMOS3 Drain current: 22A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: FE (TO252AB similar) On-state resistance: 19mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P23LA10SL-5070 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 23A; Idm: 69A; 99W; LA Case: LA Mounting: SMD Kind of package: reel; tape Pulsed drain current: 69A Power dissipation: 99W Gate charge: 46nC Polarisation: unipolar Technology: EETMOS3 Drain current: 23A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 29mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P24B4SB-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 24A; Idm: 72A; 20W Pulsed drain current: 72A Power dissipation: 20W Gate charge: 16.5nC Polarisation: unipolar Technology: EETMOS3 Drain current: 24A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: FB (TO252AA) On-state resistance: 18.5mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P25B6EB-5071 | Shindengen |
MOSFET High Switching Speed |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P25LA12SL-5070 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 142W Case: LA Mounting: SMD Kind of package: reel; tape Pulsed drain current: 75A Power dissipation: 142W Gate charge: 61nC Polarisation: unipolar Technology: EETMOS3 Drain current: 25A Kind of channel: enhancement Drain-source voltage: 120V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 30mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
 |
P25LF12SL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 168W Mounting: SMD Pulsed drain current: 75A Power dissipation: 168W Gate charge: 61nC Polarisation: unipolar Technology: EETMOS3 Drain current: 25A Kind of channel: enhancement Drain-source voltage: 120V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LF (MO235B similar) On-state resistance: 29mΩ |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| P25LF12SLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 168W Mounting: SMD Pulsed drain current: 75A Power dissipation: 168W Gate charge: 61nC Polarisation: unipolar Technology: EETMOS3 Drain current: 25A Kind of channel: enhancement Drain-source voltage: 120V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LF (MO235B similar) On-state resistance: 29mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
 |
P25LF12SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 168W Mounting: SMD Pulsed drain current: 75A Power dissipation: 168W Gate charge: 48nC Polarisation: unipolar Technology: EETMOS3 Drain current: 25A Kind of channel: enhancement Drain-source voltage: 120V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LF (MO235B similar) On-state resistance: 27mΩ |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| P25LF12SNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 168W Mounting: SMD Pulsed drain current: 75A Power dissipation: 168W Gate charge: 48nC Polarisation: unipolar Technology: EETMOS3 Drain current: 25A Kind of channel: enhancement Drain-source voltage: 120V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LF (MO235B similar) On-state resistance: 27mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P26B10SL-5071 | Shindengen |
MOSFETs EETMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MV1001SC-5072 |
|
Hersteller: Shindengen
LED Lighting Drivers LED Driver IC
LED Lighting Drivers LED Driver IC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MV1002SC-5072 |
|
Hersteller: Shindengen
LED Lighting Driver ICs LED Driver IC
LED Lighting Driver ICs LED Driver IC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MV1011SC-5072 |
|
Hersteller: Shindengen
Switching Controllers LED Driver Power IC MV series
Switching Controllers LED Driver Power IC MV series
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MV1012SC-5072 |
|
Hersteller: Shindengen
Switching Controllers LED Driver Power IC MV series
Switching Controllers LED Driver Power IC MV series
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MV2002SG-3072 |
Hersteller: Shindengen
LED Lighting Drivers LED Driver IC
LED Lighting Drivers LED Driver IC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MV2052SG-3072 |
Hersteller: Shindengen
LED Lighting Drivers LED Driver IC
LED Lighting Drivers LED Driver IC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSD03A40 |
|
Hersteller: Shindengen
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| NSD03C20 |
Hersteller: SHINDENGEN
auf Bestellung 1406 Stücke:
Lieferzeit 21-28 Tag (e)
| NSF03A60 |
Hersteller: SHINDENGEN
auf Bestellung 3750 Stücke:
Lieferzeit 21-28 Tag (e)
| P0R5B60HP2-5071 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A
Case: FB (TO252AA)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: Hi-PotMOS2
Type of transistor: N-MOSFET
Gate charge: 4.3nC
Drain current: 0.5A
Pulsed drain current: 2A
On-state resistance: 10Ω
Gate-source voltage: ±30V
Power dissipation: 35W
Drain-source voltage: 600V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A
Case: FB (TO252AA)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: Hi-PotMOS2
Type of transistor: N-MOSFET
Gate charge: 4.3nC
Drain current: 0.5A
Pulsed drain current: 2A
On-state resistance: 10Ω
Gate-source voltage: ±30V
Power dissipation: 35W
Drain-source voltage: 600V
Polarisation: unipolar
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)
| P0R5B60HP2-5071 |
|
Hersteller: Shindengen
MOSFETs Hi-PotMOS series Power MOSFET SMD
MOSFETs Hi-PotMOS series Power MOSFET SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P100FA7R5EN-5100 |
|
Hersteller: Shindengen
MOSFETs 75V, 100A EETMOS POWER MOSFET
MOSFETs 75V, 100A EETMOS POWER MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P100FH4ENK-7071 |
|
Hersteller: Shindengen
MOSFETs EETMOS series Power MOSFET SMD
MOSFETs EETMOS series Power MOSFET SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P105LF4QL-5071 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 105A; Idm: 315A; 168W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 105A
Pulsed drain current: 315A
Power dissipation: 168W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 76nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 105A; Idm: 315A; 168W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 105A
Pulsed drain current: 315A
Power dissipation: 168W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 76nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P105LF4QLK-5071 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 105A; Idm: 315A; 168W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 105A
Pulsed drain current: 315A
Power dissipation: 168W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 76nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 105A; Idm: 315A; 168W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 105A
Pulsed drain current: 315A
Power dissipation: 168W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 76nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P105LF4QNK-5071 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 105A; Idm: 315A; 168W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 105A
Pulsed drain current: 315A
Power dissipation: 168W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 105A; Idm: 315A; 168W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 105A
Pulsed drain current: 315A
Power dissipation: 168W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P10F50HP2-5600 |
|
Hersteller: Shindengen
MOSFETs High Switching Speed High Voltage
MOSFETs High Switching Speed High Voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P10F50HP2-5600 |
|
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Pulsed drain current: 40A
Power dissipation: 79W
Gate charge: 20nC
Polarisation: unipolar
Technology: Hi-PotMOS2
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Pulsed drain current: 40A
Power dissipation: 79W
Gate charge: 20nC
Polarisation: unipolar
Technology: Hi-PotMOS2
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| P10F60HP2-5600 |
|
Hersteller: Shindengen
MOSFETs Mosfet
MOSFETs Mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P10F60HP2-5600 |
|
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 85W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 23nC
Kind of package: bulk
Kind of channel: enhancement
Technology: Hi-PotMOS2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 85W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 23nC
Kind of package: bulk
Kind of channel: enhancement
Technology: Hi-PotMOS2
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
| P126FP10SN-5071 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 126A; Idm: 504A; 238W
Mounting: SMD
Case: FP (SC83 similar)
Power dissipation: 238W
Kind of package: reel; tape
Pulsed drain current: 504A
Gate charge: 160nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 126A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 126A; Idm: 504A; 238W
Mounting: SMD
Case: FP (SC83 similar)
Power dissipation: 238W
Kind of package: reel; tape
Pulsed drain current: 504A
Gate charge: 160nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 126A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
auf Bestellung 209 Stücke:
Lieferzeit 14-21 Tag (e)
| P12F60HP2-5600 |
|
Hersteller: Shindengen
MOSFETs High Switching Speed High Voltage
MOSFETs High Switching Speed High Voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P12FE7R5SBK-5071 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 12A; Idm: 36A; 24W
Pulsed drain current: 36A
Power dissipation: 24W
Gate charge: 16.6nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 75V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: FE (TO252AB similar)
On-state resistance: 63mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 12A; Idm: 36A; 24W
Pulsed drain current: 36A
Power dissipation: 24W
Gate charge: 16.6nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 75V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: FE (TO252AB similar)
On-state resistance: 63mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P13F28HP2-5600 |
|
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 280V; 13A; Idm: 52A; 65W
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.3Ω
Drain current: 13A
Pulsed drain current: 52A
Gate-source voltage: ±30V
Power dissipation: 65W
Drain-source voltage: 280V
Kind of package: bulk
Kind of channel: enhancement
Case: FTO-220AG (SC91)
Technology: Hi-PotMOS2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 280V; 13A; Idm: 52A; 65W
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.3Ω
Drain current: 13A
Pulsed drain current: 52A
Gate-source voltage: ±30V
Power dissipation: 65W
Drain-source voltage: 280V
Kind of package: bulk
Kind of channel: enhancement
Case: FTO-220AG (SC91)
Technology: Hi-PotMOS2
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
| P13F28HP2-5600 |
|
Hersteller: Shindengen
MOSFETs Hi-PotMOS Power MOSFET Through Hole
MOSFETs Hi-PotMOS Power MOSFET Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P13F50HP2-5600 |
|
Hersteller: Shindengen
MOSFETs High Switching Speed High Voltage
MOSFETs High Switching Speed High Voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P13LA10EL-5070 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 100V; 13A; Idm: 52A; 1.7W
Case: LA
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 52A
Power dissipation: 1.7W
Gate charge: 57nC
Polarisation: unipolar
Technology: EETMOS2
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 100V; 13A; Idm: 52A; 1.7W
Case: LA
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 52A
Power dissipation: 1.7W
Gate charge: 57nC
Polarisation: unipolar
Technology: EETMOS2
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P13LA10EL-5070 |
Hersteller: Shindengen
MOSFETs 100V, 13A EETMOS POWER MOSFET
MOSFETs 100V, 13A EETMOS POWER MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P140LF4QL-5071 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.42mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 560A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.42mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 560A
auf Bestellung 3999 Stücke:
Lieferzeit 14-21 Tag (e)
| P140LF4QLK-5071 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.42mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.42mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P140LF4QN-5071 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.48mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 560A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.48mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 560A
auf Bestellung 4787 Stücke:
Lieferzeit 14-21 Tag (e)
| P140LF4QNK-5071 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.48mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 560A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 1.48mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 560A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P14FE6SBK-5071 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 14A; Idm: 42A; 24W
Pulsed drain current: 42A
Power dissipation: 24W
Gate charge: 16.3nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: FE (TO252AB similar)
On-state resistance: 39mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 14A; Idm: 42A; 24W
Pulsed drain current: 42A
Power dissipation: 24W
Gate charge: 16.3nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: FE (TO252AB similar)
On-state resistance: 39mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P15F50HP2-5600 |
|
Hersteller: Shindengen
MOSFETs High Switching Speed High Voltage
MOSFETs High Switching Speed High Voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P15F60HP2-5600 |
|
Hersteller: Shindengen
MOSFETs Mosfet
MOSFETs Mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P15F60HP2-5600 |
|
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 37nC
Kind of package: bulk
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 37nC
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| P15F60HP2F-5600 |
|
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: bulk
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 402 Stücke:
Lieferzeit 14-21 Tag (e)
| P15F60HP2F-5600 |
|
Hersteller: Shindengen
MOSFETs Hi-PotMOS Power MOSFET Through Hole
MOSFETs Hi-PotMOS Power MOSFET Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P15LA12SL-5070 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 15A; Idm: 45A; 83W; LA
Case: LA
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 45A
Power dissipation: 83W
Gate charge: 38.5nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 15A; Idm: 45A; 83W; LA
Case: LA
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 45A
Power dissipation: 83W
Gate charge: 38.5nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P16B6SB-5071 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Pulsed drain current: 48A
Power dissipation: 20W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17nC
Technology: EETMOS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Pulsed drain current: 48A
Power dissipation: 20W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17nC
Technology: EETMOS3
auf Bestellung 2981 Stücke:
Lieferzeit 14-21 Tag (e)
| P16B6SBK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 48A; 23W
Pulsed drain current: 48A
Power dissipation: 23W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: FB (TO252AA)
On-state resistance: 37mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 48A; 23W
Pulsed drain current: 48A
Power dissipation: 23W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: FB (TO252AA)
On-state resistance: 37mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P170FZ6QNKA-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 170A; Idm: 510A; 178W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 170A
Pulsed drain current: 510A
Power dissipation: 178W
Case: FZ7 (TO263SC); FZ (TO236AB)
Gate-source voltage: ±10V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 170A; Idm: 510A; 178W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 170A
Pulsed drain current: 510A
Power dissipation: 178W
Case: FZ7 (TO263SC); FZ (TO236AB)
Gate-source voltage: ±10V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P17F28HP2-5600 |
|
Hersteller: Shindengen
MOSFETs Hi-PotMOS Power MOSFET Through Hole
MOSFETs Hi-PotMOS Power MOSFET Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P18LA12SL-5070 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA
Case: LA
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 54A
Power dissipation: 99W
Gate charge: 47nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA
Case: LA
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 54A
Power dissipation: 99W
Gate charge: 47nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P19LA10SL-5070 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 19A; Idm: 57A; 83W; LA
Case: LA
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 57A
Power dissipation: 83W
Gate charge: 38nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 19A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 19A; Idm: 57A; 83W; LA
Case: LA
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 57A
Power dissipation: 83W
Gate charge: 38nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 19A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P1R5B40HP2-5071 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W
Mounting: SMD
Pulsed drain current: 6A
Power dissipation: 35W
Gate charge: 3.9nC
Polarisation: unipolar
Technology: Hi-PotMOS2
Drain current: 1.5A
Kind of channel: enhancement
Drain-source voltage: 400V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: FB (TO252AA)
On-state resistance: 5Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W
Mounting: SMD
Pulsed drain current: 6A
Power dissipation: 35W
Gate charge: 3.9nC
Polarisation: unipolar
Technology: Hi-PotMOS2
Drain current: 1.5A
Kind of channel: enhancement
Drain-source voltage: 400V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: FB (TO252AA)
On-state resistance: 5Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P20F50HP2-5600 |
|
Hersteller: Shindengen
MOSFETs High Switching Speed High Voltage
MOSFETs High Switching Speed High Voltage
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.22 EUR |
| 10+ | 8.13 EUR |
| 100+ | 6.53 EUR |
| 500+ | 5.82 EUR |
| 1000+ | 4.99 EUR |
| 2500+ | 4.69 EUR |
| P21F28HP2-5600 |
|
Hersteller: Shindengen
MOSFETs 280V, 21A Hi-PotMOS MOSFET
MOSFETs 280V, 21A Hi-PotMOS MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P22F10SN-5600 |
|
Hersteller: Shindengen
MOSFETs EETMOS series Power MOSFET Through Hole
MOSFETs EETMOS series Power MOSFET Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P22F10SN-5600 |
|
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 22A; Idm: 66A; 35W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 66A
Power dissipation: 35W
Case: FTO-220AG (SC91)
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: bulk
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 22A; Idm: 66A; 35W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 66A
Power dissipation: 35W
Case: FTO-220AG (SC91)
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
| P22FE4SBK-5071 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 22A; Idm: 66A; 24W
Pulsed drain current: 66A
Power dissipation: 24W
Gate charge: 16.5nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: FE (TO252AB similar)
On-state resistance: 19mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 22A; Idm: 66A; 24W
Pulsed drain current: 66A
Power dissipation: 24W
Gate charge: 16.5nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: FE (TO252AB similar)
On-state resistance: 19mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P23LA10SL-5070 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 23A; Idm: 69A; 99W; LA
Case: LA
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 69A
Power dissipation: 99W
Gate charge: 46nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 23A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 23A; Idm: 69A; 99W; LA
Case: LA
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 69A
Power dissipation: 99W
Gate charge: 46nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 23A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P24B4SB-5071 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 24A; Idm: 72A; 20W
Pulsed drain current: 72A
Power dissipation: 20W
Gate charge: 16.5nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: FB (TO252AA)
On-state resistance: 18.5mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 24A; Idm: 72A; 20W
Pulsed drain current: 72A
Power dissipation: 20W
Gate charge: 16.5nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: FB (TO252AA)
On-state resistance: 18.5mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P25B6EB-5071 |
|
Hersteller: Shindengen
MOSFET High Switching Speed
MOSFET High Switching Speed
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P25LA12SL-5070 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 142W
Case: LA
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 75A
Power dissipation: 142W
Gate charge: 61nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 142W
Case: LA
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 75A
Power dissipation: 142W
Gate charge: 61nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P25LF12SL-5071 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 168W
Mounting: SMD
Pulsed drain current: 75A
Power dissipation: 168W
Gate charge: 61nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LF (MO235B similar)
On-state resistance: 29mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 168W
Mounting: SMD
Pulsed drain current: 75A
Power dissipation: 168W
Gate charge: 61nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LF (MO235B similar)
On-state resistance: 29mΩ
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
| P25LF12SLK-5071 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 168W
Mounting: SMD
Pulsed drain current: 75A
Power dissipation: 168W
Gate charge: 61nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 120V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LF (MO235B similar)
On-state resistance: 29mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 168W
Mounting: SMD
Pulsed drain current: 75A
Power dissipation: 168W
Gate charge: 61nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 120V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LF (MO235B similar)
On-state resistance: 29mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P25LF12SN-5071 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 168W
Mounting: SMD
Pulsed drain current: 75A
Power dissipation: 168W
Gate charge: 48nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LF (MO235B similar)
On-state resistance: 27mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 168W
Mounting: SMD
Pulsed drain current: 75A
Power dissipation: 168W
Gate charge: 48nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LF (MO235B similar)
On-state resistance: 27mΩ
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
| P25LF12SNK-5071 |
|
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 168W
Mounting: SMD
Pulsed drain current: 75A
Power dissipation: 168W
Gate charge: 48nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 120V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LF (MO235B similar)
On-state resistance: 27mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 168W
Mounting: SMD
Pulsed drain current: 75A
Power dissipation: 168W
Gate charge: 48nC
Polarisation: unipolar
Technology: EETMOS3
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 120V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LF (MO235B similar)
On-state resistance: 27mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P26B10SL-5071 |
|
Hersteller: Shindengen
MOSFETs EETMOS series Power MOSFET SMD
MOSFETs EETMOS series Power MOSFET SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH