Produkte > SHINDENGEN > Alle Produkte des Herstellers SHINDENGEN (2840) > Seite 31 nach 48
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| NSF03A60 | SHINDENGEN |
auf Bestellung 3750 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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P0R5B60HP2-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A Case: FB (TO252AA) Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: Hi-PotMOS2 Type of transistor: N-MOSFET Gate charge: 4.3nC Drain current: 0.5A Pulsed drain current: 2A On-state resistance: 10Ω Gate-source voltage: ±30V Power dissipation: 35W Drain-source voltage: 600V Polarisation: unipolar |
auf Bestellung 2969 Stücke: Lieferzeit 14-21 Tag (e) |
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| P0R5B60HP2-5071 | Shindengen |
MOSFETs Hi-PotMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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P0R5B60HP2-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A Case: FB (TO252AA) Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: Hi-PotMOS2 Type of transistor: N-MOSFET Gate charge: 4.3nC Drain current: 0.5A Pulsed drain current: 2A On-state resistance: 10Ω Gate-source voltage: ±30V Power dissipation: 35W Drain-source voltage: 600V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2969 Stücke: Lieferzeit 7-14 Tag (e) |
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P100FA7R5EN-5100 | Shindengen |
MOSFETs 75V, 100A EETMOS POWER MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| P100FH4ENK-7071 | Shindengen |
MOSFETs EETMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P100FP12SN-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 100A; Idm: 400A; 238W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 100A Pulsed drain current: 400A Power dissipation: 238W Case: FP (SC83 similar) Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 164nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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P10F50HP2-5600 | SHINDENGEN |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Drain-source voltage: 500V Drain current: 10A Power dissipation: 79W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 20nC Kind of channel: enhancement Polarisation: unipolar Pulsed drain current: 40A Kind of package: bulk |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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P10F50HP2-5600 | Shindengen |
MOSFETs High Switching Speed High Voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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P10F50HP2-5600 | SHINDENGEN |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Drain-source voltage: 500V Drain current: 10A Power dissipation: 79W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 20nC Kind of channel: enhancement Polarisation: unipolar Pulsed drain current: 40A Kind of package: bulk Anzahl je Verpackung: 1 Stücke |
auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
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P10F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Drain-source voltage: 600V Drain current: 10A Power dissipation: 85W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Gate charge: 23nC Kind of channel: enhancement Polarisation: unipolar Pulsed drain current: 40A Kind of package: bulk |
auf Bestellung 232 Stücke: Lieferzeit 14-21 Tag (e) |
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P10F60HP2-5600 | Shindengen |
MOSFETs Mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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P10F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Drain-source voltage: 600V Drain current: 10A Power dissipation: 85W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Gate charge: 23nC Kind of channel: enhancement Polarisation: unipolar Pulsed drain current: 40A Kind of package: bulk Anzahl je Verpackung: 1 Stücke |
auf Bestellung 232 Stücke: Lieferzeit 7-14 Tag (e) |
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| P126FP10SN-5071 | SHINDENGEN | P126FP10SN-5071 SMD N channel transistors |
auf Bestellung 210 Stücke: Lieferzeit 7-14 Tag (e) |
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P12F60HP2-5600 | Shindengen |
MOSFETs High Switching Speed High Voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| P12F60HP2-5600 | SHINDENGEN | P12F60HP2-5600 THT N channel transistors |
auf Bestellung 280 Stücke: Lieferzeit 7-14 Tag (e) |
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| P13F28HP2-5600 | Shindengen |
MOSFETs Hi-PotMOS Power MOSFET Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P13F28HP2-5600 | SHINDENGEN | P13F28HP2-5600 THT N channel transistors |
auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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P13F50HP2-5600 | Shindengen |
MOSFETs High Switching Speed High Voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| P13F50HP2-5600 | SHINDENGEN | P13F50HP2-5600 THT N channel transistors |
auf Bestellung 413 Stücke: Lieferzeit 7-14 Tag (e) |
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P13LA10EL-5070 | Shindengen | MOSFETs 100V, 13A EETMOS POWER MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| P140LF4QL-5071 | SHINDENGEN | P140LF4QL-5071 SMD N channel transistors |
auf Bestellung 4098 Stücke: Lieferzeit 7-14 Tag (e) |
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| P140LF4QN-5071 | SHINDENGEN | P140LF4QN-5071 SMD N channel transistors |
auf Bestellung 4827 Stücke: Lieferzeit 7-14 Tag (e) |
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| P14FE6SBK-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 14A; Idm: 42A; 24W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 42A Power dissipation: 24W Case: FE (TO252AB similar) Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 16.3nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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P15F50HP2-5600 | Shindengen |
MOSFETs High Switching Speed High Voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| P15F50HP2-5600 | SHINDENGEN | P15F50HP2-5600 THT N channel transistors |
auf Bestellung 157 Stücke: Lieferzeit 7-14 Tag (e) |
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P15F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 60A Power dissipation: 95W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 0.49Ω Mounting: THT Gate charge: 37nC Kind of package: bulk Kind of channel: enhancement |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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P15F60HP2-5600 | Shindengen |
MOSFETs Mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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P15F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 60A Power dissipation: 95W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 0.49Ω Mounting: THT Gate charge: 37nC Kind of package: bulk Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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P15F60HP2F-5600 | SHINDENGEN |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 60A Power dissipation: 95W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 34nC Kind of package: bulk Kind of channel: enhancement |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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| P15F60HP2F-5600 | Shindengen |
MOSFETs Hi-PotMOS Power MOSFET Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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P15F60HP2F-5600 | SHINDENGEN |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 60A Power dissipation: 95W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 34nC Kind of package: bulk Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 450 Stücke: Lieferzeit 7-14 Tag (e) |
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| P15LA12SL-5070 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 15A; Idm: 45A; 83W; LA Technology: EETMOS3 Kind of channel: enhancement Kind of package: reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 38.5nC On-state resistance: 50mΩ Drain current: 15A Gate-source voltage: ±20V Pulsed drain current: 45A Power dissipation: 83W Drain-source voltage: 120V Case: LA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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P16B6SB-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 17nC On-state resistance: 37mΩ Drain current: 16A Power dissipation: 20W Gate-source voltage: ±20V Pulsed drain current: 48A Drain-source voltage: 60V Mounting: SMD Technology: EETMOS3 Kind of channel: enhancement Case: FB (TO252AA) |
auf Bestellung 2994 Stücke: Lieferzeit 14-21 Tag (e) |
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P16B6SB-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 17nC On-state resistance: 37mΩ Drain current: 16A Power dissipation: 20W Gate-source voltage: ±20V Pulsed drain current: 48A Drain-source voltage: 60V Mounting: SMD Technology: EETMOS3 Kind of channel: enhancement Case: FB (TO252AA) Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2994 Stücke: Lieferzeit 7-14 Tag (e) |
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| P17F28HP2-5600 | Shindengen |
MOSFETs Hi-PotMOS Power MOSFET Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P17F28HP2-5600 | SHINDENGEN | P17F28HP2-5600 THT N channel transistors |
auf Bestellung 73 Stücke: Lieferzeit 7-14 Tag (e) |
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| P18LA12SL-5070 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA Technology: EETMOS3 Kind of channel: enhancement Kind of package: reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 47nC On-state resistance: 44mΩ Drain current: 18A Gate-source voltage: ±20V Pulsed drain current: 54A Power dissipation: 99W Drain-source voltage: 120V Case: LA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P1R5B40HP2-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W Kind of channel: enhancement Technology: Hi-PotMOS2 Type of transistor: N-MOSFET Mounting: SMD Gate charge: 3.9nC Drain current: 1.5A On-state resistance: 5Ω Pulsed drain current: 6A Gate-source voltage: ±30V Power dissipation: 35W Drain-source voltage: 400V Kind of package: reel; tape Case: FB (TO252AA) Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P1R5B40HP2-5071 | Shindengen |
MOSFETs Hi-PotMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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P20F50HP2-5600 | SHINDENGEN |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 20A; Idm: 80A; 95W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Pulsed drain current: 80A Power dissipation: 95W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 40nC Kind of package: bulk Kind of channel: enhancement Technology: Hi-PotMOS2 |
auf Bestellung 1063 Stücke: Lieferzeit 14-21 Tag (e) |
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P20F50HP2-5600 | Shindengen |
MOSFETs High Switching Speed High Voltage |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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P20F50HP2-5600 | SHINDENGEN |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 20A; Idm: 80A; 95W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Pulsed drain current: 80A Power dissipation: 95W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 40nC Kind of package: bulk Kind of channel: enhancement Technology: Hi-PotMOS2 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1063 Stücke: Lieferzeit 7-14 Tag (e) |
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| P211FZ4QMKA-5071 | SHINDENGEN | P211FZ4QMKA-5071 SMD N channel transistors |
auf Bestellung 977 Stücke: Lieferzeit 7-14 Tag (e) |
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P21F28HP2-5600 | SHINDENGEN |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 280V; 21A; Idm: 84A; 85W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 280V Drain current: 21A Power dissipation: 85W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement Gate charge: 20.5nC Pulsed drain current: 84A |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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P21F28HP2-5600 | Shindengen |
MOSFETs 280V, 21A Hi-PotMOS MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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P21F28HP2-5600 | SHINDENGEN |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 280V; 21A; Idm: 84A; 85W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 280V Drain current: 21A Power dissipation: 85W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement Gate charge: 20.5nC Pulsed drain current: 84A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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P22F10SN-5600 | SHINDENGEN |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 22A; Idm: 66A; 35W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Pulsed drain current: 66A Power dissipation: 35W Case: FTO-220AG (SC91) Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 34nC Kind of package: bulk Kind of channel: enhancement |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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| P22F10SN-5600 | Shindengen |
MOSFETs EETMOS series Power MOSFET Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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P22F10SN-5600 | SHINDENGEN |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 22A; Idm: 66A; 35W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Pulsed drain current: 66A Power dissipation: 35W Case: FTO-220AG (SC91) Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 34nC Kind of package: bulk Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 33 Stücke: Lieferzeit 7-14 Tag (e) |
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| P22FE4SBK-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 22A; Idm: 66A; 24W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 22A Pulsed drain current: 66A Power dissipation: 24W Case: FE (TO252AB similar) Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P24B4SB-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 24A; Idm: 72A; 20W Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 16.5nC On-state resistance: 18.5mΩ Drain current: 24A Power dissipation: 20W Gate-source voltage: ±20V Pulsed drain current: 72A Drain-source voltage: 40V Mounting: SMD Technology: EETMOS3 Kind of channel: enhancement Case: FB (TO252AA) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P25B6EB-5071 | Shindengen |
MOSFET High Switching Speed |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P25B6EB-5071 | SHINDENGEN | P25B6EB-5071 SMD N channel transistors |
auf Bestellung 81 Stücke: Lieferzeit 7-14 Tag (e) |
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| P25LA12SL-5070 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 142W Technology: EETMOS3 Kind of channel: enhancement Kind of package: reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 61nC On-state resistance: 30mΩ Drain current: 25A Gate-source voltage: ±20V Pulsed drain current: 75A Power dissipation: 142W Drain-source voltage: 120V Case: LA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P25LF12SL-5071 | SHINDENGEN | P25LF12SL-5071 SMD N channel transistors |
auf Bestellung 95 Stücke: Lieferzeit 7-14 Tag (e) |
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| P25LF12SLK-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 168W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 25A Pulsed drain current: 75A Power dissipation: 168W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 29mΩ Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P25LF12SN-5071 | SHINDENGEN | P25LF12SN-5071 SMD N channel transistors |
auf Bestellung 68 Stücke: Lieferzeit 7-14 Tag (e) |
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| P25LF12SNK-5071 | SHINDENGEN |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 168W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 25A Pulsed drain current: 75A Power dissipation: 168W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| P26B10SL-5071 | Shindengen |
MOSFETs EETMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NSF03A60 |
Hersteller: SHINDENGEN
auf Bestellung 3750 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| P0R5B60HP2-5071 |
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Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A
Case: FB (TO252AA)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: Hi-PotMOS2
Type of transistor: N-MOSFET
Gate charge: 4.3nC
Drain current: 0.5A
Pulsed drain current: 2A
On-state resistance: 10Ω
Gate-source voltage: ±30V
Power dissipation: 35W
Drain-source voltage: 600V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A
Case: FB (TO252AA)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: Hi-PotMOS2
Type of transistor: N-MOSFET
Gate charge: 4.3nC
Drain current: 0.5A
Pulsed drain current: 2A
On-state resistance: 10Ω
Gate-source voltage: ±30V
Power dissipation: 35W
Drain-source voltage: 600V
Polarisation: unipolar
auf Bestellung 2969 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 90+ | 0.8 EUR |
| 112+ | 0.64 EUR |
| 150+ | 0.48 EUR |
| 161+ | 0.44 EUR |
| 214+ | 0.33 EUR |
| P0R5B60HP2-5071 |
![]() |
Hersteller: Shindengen
MOSFETs Hi-PotMOS series Power MOSFET SMD
MOSFETs Hi-PotMOS series Power MOSFET SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P0R5B60HP2-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A
Case: FB (TO252AA)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: Hi-PotMOS2
Type of transistor: N-MOSFET
Gate charge: 4.3nC
Drain current: 0.5A
Pulsed drain current: 2A
On-state resistance: 10Ω
Gate-source voltage: ±30V
Power dissipation: 35W
Drain-source voltage: 600V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A
Case: FB (TO252AA)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: Hi-PotMOS2
Type of transistor: N-MOSFET
Gate charge: 4.3nC
Drain current: 0.5A
Pulsed drain current: 2A
On-state resistance: 10Ω
Gate-source voltage: ±30V
Power dissipation: 35W
Drain-source voltage: 600V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2969 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 90+ | 0.8 EUR |
| 112+ | 0.64 EUR |
| 150+ | 0.48 EUR |
| 161+ | 0.44 EUR |
| 214+ | 0.33 EUR |
| P100FA7R5EN-5100 |
![]() |
Hersteller: Shindengen
MOSFETs 75V, 100A EETMOS POWER MOSFET
MOSFETs 75V, 100A EETMOS POWER MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P100FH4ENK-7071 |
![]() |
Hersteller: Shindengen
MOSFETs EETMOS series Power MOSFET SMD
MOSFETs EETMOS series Power MOSFET SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P100FP12SN-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 100A; Idm: 400A; 238W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 238W
Case: FP (SC83 similar)
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 100A; Idm: 400A; 238W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 238W
Case: FP (SC83 similar)
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P10F50HP2-5600 |
![]() |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 79W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 20nC
Kind of channel: enhancement
Polarisation: unipolar
Pulsed drain current: 40A
Kind of package: bulk
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 79W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 20nC
Kind of channel: enhancement
Polarisation: unipolar
Pulsed drain current: 40A
Kind of package: bulk
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.75 EUR |
| P10F50HP2-5600 |
![]() |
Hersteller: Shindengen
MOSFETs High Switching Speed High Voltage
MOSFETs High Switching Speed High Voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P10F50HP2-5600 |
![]() |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 79W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 20nC
Kind of channel: enhancement
Polarisation: unipolar
Pulsed drain current: 40A
Kind of package: bulk
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 79W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 20nC
Kind of channel: enhancement
Polarisation: unipolar
Pulsed drain current: 40A
Kind of package: bulk
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.75 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.89 EUR |
| P10F60HP2-5600 |
![]() |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 85W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 23nC
Kind of channel: enhancement
Polarisation: unipolar
Pulsed drain current: 40A
Kind of package: bulk
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 85W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 23nC
Kind of channel: enhancement
Polarisation: unipolar
Pulsed drain current: 40A
Kind of package: bulk
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.3 EUR |
| 61+ | 1.17 EUR |
| 70+ | 1.03 EUR |
| 100+ | 0.94 EUR |
| P10F60HP2-5600 |
![]() |
Hersteller: Shindengen
MOSFETs Mosfet
MOSFETs Mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P10F60HP2-5600 |
![]() |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 85W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 23nC
Kind of channel: enhancement
Polarisation: unipolar
Pulsed drain current: 40A
Kind of package: bulk
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 85W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 23nC
Kind of channel: enhancement
Polarisation: unipolar
Pulsed drain current: 40A
Kind of package: bulk
Anzahl je Verpackung: 1 Stücke
auf Bestellung 232 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.3 EUR |
| 61+ | 1.17 EUR |
| 70+ | 1.03 EUR |
| 100+ | 0.94 EUR |
| P126FP10SN-5071 |
Hersteller: SHINDENGEN
P126FP10SN-5071 SMD N channel transistors
P126FP10SN-5071 SMD N channel transistors
auf Bestellung 210 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.53 EUR |
| 37+ | 1.97 EUR |
| 39+ | 1.87 EUR |
| 240+ | 1.8 EUR |
| P12F60HP2-5600 |
![]() |
Hersteller: Shindengen
MOSFETs High Switching Speed High Voltage
MOSFETs High Switching Speed High Voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P12F60HP2-5600 |
Hersteller: SHINDENGEN
P12F60HP2-5600 THT N channel transistors
P12F60HP2-5600 THT N channel transistors
auf Bestellung 280 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.23 EUR |
| 67+ | 1.07 EUR |
| 71+ | 1.02 EUR |
| 500+ | 0.97 EUR |
| P13F28HP2-5600 |
![]() |
Hersteller: Shindengen
MOSFETs Hi-PotMOS Power MOSFET Through Hole
MOSFETs Hi-PotMOS Power MOSFET Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P13F28HP2-5600 |
Hersteller: SHINDENGEN
P13F28HP2-5600 THT N channel transistors
P13F28HP2-5600 THT N channel transistors
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 54+ | 1.33 EUR |
| 70+ | 1.02 EUR |
| 500+ | 0.93 EUR |
| P13F50HP2-5600 |
![]() |
Hersteller: Shindengen
MOSFETs High Switching Speed High Voltage
MOSFETs High Switching Speed High Voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P13F50HP2-5600 |
Hersteller: SHINDENGEN
P13F50HP2-5600 THT N channel transistors
P13F50HP2-5600 THT N channel transistors
auf Bestellung 413 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 64+ | 1.13 EUR |
| 74+ | 0.97 EUR |
| 77+ | 0.93 EUR |
| 500+ | 0.89 EUR |
| P13LA10EL-5070 |
Hersteller: Shindengen
MOSFETs 100V, 13A EETMOS POWER MOSFET
MOSFETs 100V, 13A EETMOS POWER MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P140LF4QL-5071 |
Hersteller: SHINDENGEN
P140LF4QL-5071 SMD N channel transistors
P140LF4QL-5071 SMD N channel transistors
auf Bestellung 4098 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 1 EUR |
| 93+ | 0.78 EUR |
| 98+ | 0.73 EUR |
| 500+ | 0.7 EUR |
| P140LF4QN-5071 |
Hersteller: SHINDENGEN
P140LF4QN-5071 SMD N channel transistors
P140LF4QN-5071 SMD N channel transistors
auf Bestellung 4827 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 93+ | 0.77 EUR |
| 98+ | 0.73 EUR |
| 500+ | 0.7 EUR |
| P14FE6SBK-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 14A; Idm: 42A; 24W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 42A
Power dissipation: 24W
Case: FE (TO252AB similar)
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 14A; Idm: 42A; 24W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 42A
Power dissipation: 24W
Case: FE (TO252AB similar)
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P15F50HP2-5600 |
![]() |
Hersteller: Shindengen
MOSFETs High Switching Speed High Voltage
MOSFETs High Switching Speed High Voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P15F50HP2-5600 |
Hersteller: SHINDENGEN
P15F50HP2-5600 THT N channel transistors
P15F50HP2-5600 THT N channel transistors
auf Bestellung 157 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.46 EUR |
| 66+ | 1.09 EUR |
| 70+ | 1.03 EUR |
| 500+ | 1.02 EUR |
| P15F60HP2-5600 |
![]() |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 37nC
Kind of package: bulk
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 37nC
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.36 EUR |
| 34+ | 2.13 EUR |
| 39+ | 1.87 EUR |
| 100+ | 1.69 EUR |
| P15F60HP2-5600 |
![]() |
Hersteller: Shindengen
MOSFETs Mosfet
MOSFETs Mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P15F60HP2-5600 |
![]() |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 37nC
Kind of package: bulk
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 37nC
Kind of package: bulk
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.36 EUR |
| 34+ | 2.13 EUR |
| 39+ | 1.87 EUR |
| 100+ | 1.69 EUR |
| P15F60HP2F-5600 |
![]() |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: bulk
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.73 EUR |
| 46+ | 1.56 EUR |
| 53+ | 1.37 EUR |
| 100+ | 1.36 EUR |
| P15F60HP2F-5600 |
![]() |
Hersteller: Shindengen
MOSFETs Hi-PotMOS Power MOSFET Through Hole
MOSFETs Hi-PotMOS Power MOSFET Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P15F60HP2F-5600 |
![]() |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: bulk
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: bulk
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 450 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.73 EUR |
| 46+ | 1.56 EUR |
| 53+ | 1.37 EUR |
| 100+ | 1.36 EUR |
| P15LA12SL-5070 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 15A; Idm: 45A; 83W; LA
Technology: EETMOS3
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 38.5nC
On-state resistance: 50mΩ
Drain current: 15A
Gate-source voltage: ±20V
Pulsed drain current: 45A
Power dissipation: 83W
Drain-source voltage: 120V
Case: LA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 15A; Idm: 45A; 83W; LA
Technology: EETMOS3
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 38.5nC
On-state resistance: 50mΩ
Drain current: 15A
Gate-source voltage: ±20V
Pulsed drain current: 45A
Power dissipation: 83W
Drain-source voltage: 120V
Case: LA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P16B6SB-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 37mΩ
Drain current: 16A
Power dissipation: 20W
Gate-source voltage: ±20V
Pulsed drain current: 48A
Drain-source voltage: 60V
Mounting: SMD
Technology: EETMOS3
Kind of channel: enhancement
Case: FB (TO252AA)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 37mΩ
Drain current: 16A
Power dissipation: 20W
Gate-source voltage: ±20V
Pulsed drain current: 48A
Drain-source voltage: 60V
Mounting: SMD
Technology: EETMOS3
Kind of channel: enhancement
Case: FB (TO252AA)
auf Bestellung 2994 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 123+ | 0.58 EUR |
| 138+ | 0.52 EUR |
| 155+ | 0.46 EUR |
| 500+ | 0.41 EUR |
| P16B6SB-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 37mΩ
Drain current: 16A
Power dissipation: 20W
Gate-source voltage: ±20V
Pulsed drain current: 48A
Drain-source voltage: 60V
Mounting: SMD
Technology: EETMOS3
Kind of channel: enhancement
Case: FB (TO252AA)
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 37mΩ
Drain current: 16A
Power dissipation: 20W
Gate-source voltage: ±20V
Pulsed drain current: 48A
Drain-source voltage: 60V
Mounting: SMD
Technology: EETMOS3
Kind of channel: enhancement
Case: FB (TO252AA)
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2994 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 123+ | 0.58 EUR |
| 138+ | 0.52 EUR |
| 155+ | 0.46 EUR |
| 500+ | 0.41 EUR |
| P17F28HP2-5600 |
![]() |
Hersteller: Shindengen
MOSFETs Hi-PotMOS Power MOSFET Through Hole
MOSFETs Hi-PotMOS Power MOSFET Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P17F28HP2-5600 |
Hersteller: SHINDENGEN
P17F28HP2-5600 THT N channel transistors
P17F28HP2-5600 THT N channel transistors
auf Bestellung 73 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.26 EUR |
| 65+ | 1.1 EUR |
| 69+ | 1.04 EUR |
| 500+ | 1 EUR |
| P18LA12SL-5070 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA
Technology: EETMOS3
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 47nC
On-state resistance: 44mΩ
Drain current: 18A
Gate-source voltage: ±20V
Pulsed drain current: 54A
Power dissipation: 99W
Drain-source voltage: 120V
Case: LA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA
Technology: EETMOS3
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 47nC
On-state resistance: 44mΩ
Drain current: 18A
Gate-source voltage: ±20V
Pulsed drain current: 54A
Power dissipation: 99W
Drain-source voltage: 120V
Case: LA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P1R5B40HP2-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W
Kind of channel: enhancement
Technology: Hi-PotMOS2
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 3.9nC
Drain current: 1.5A
On-state resistance: 5Ω
Pulsed drain current: 6A
Gate-source voltage: ±30V
Power dissipation: 35W
Drain-source voltage: 400V
Kind of package: reel; tape
Case: FB (TO252AA)
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W
Kind of channel: enhancement
Technology: Hi-PotMOS2
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 3.9nC
Drain current: 1.5A
On-state resistance: 5Ω
Pulsed drain current: 6A
Gate-source voltage: ±30V
Power dissipation: 35W
Drain-source voltage: 400V
Kind of package: reel; tape
Case: FB (TO252AA)
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P1R5B40HP2-5071 |
![]() |
Hersteller: Shindengen
MOSFETs Hi-PotMOS series Power MOSFET SMD
MOSFETs Hi-PotMOS series Power MOSFET SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P20F50HP2-5600 |
![]() |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 20A; Idm: 80A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 40nC
Kind of package: bulk
Kind of channel: enhancement
Technology: Hi-PotMOS2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 20A; Idm: 80A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 40nC
Kind of package: bulk
Kind of channel: enhancement
Technology: Hi-PotMOS2
auf Bestellung 1063 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.72 EUR |
| 53+ | 1.36 EUR |
| 100+ | 1.24 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 1.14 EUR |
| P20F50HP2-5600 |
![]() |
Hersteller: Shindengen
MOSFETs High Switching Speed High Voltage
MOSFETs High Switching Speed High Voltage
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 8.59 EUR |
| 10+ | 6.83 EUR |
| 100+ | 5.49 EUR |
| 500+ | 4.89 EUR |
| 1000+ | 4.19 EUR |
| 2500+ | 3.94 EUR |
| P20F50HP2-5600 |
![]() |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 20A; Idm: 80A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 40nC
Kind of package: bulk
Kind of channel: enhancement
Technology: Hi-PotMOS2
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 20A; Idm: 80A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 40nC
Kind of package: bulk
Kind of channel: enhancement
Technology: Hi-PotMOS2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1063 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.72 EUR |
| 53+ | 1.36 EUR |
| 100+ | 1.24 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 1.14 EUR |
| P211FZ4QMKA-5071 |
Hersteller: SHINDENGEN
P211FZ4QMKA-5071 SMD N channel transistors
P211FZ4QMKA-5071 SMD N channel transistors
auf Bestellung 977 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.39 EUR |
| 40+ | 1.79 EUR |
| 43+ | 1.69 EUR |
| 500+ | 1.62 EUR |
| P21F28HP2-5600 |
![]() |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 280V; 21A; Idm: 84A; 85W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 280V
Drain current: 21A
Power dissipation: 85W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Gate charge: 20.5nC
Pulsed drain current: 84A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 280V; 21A; Idm: 84A; 85W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 280V
Drain current: 21A
Power dissipation: 85W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Gate charge: 20.5nC
Pulsed drain current: 84A
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.76 EUR |
| P21F28HP2-5600 |
![]() |
Hersteller: Shindengen
MOSFETs 280V, 21A Hi-PotMOS MOSFET
MOSFETs 280V, 21A Hi-PotMOS MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P21F28HP2-5600 |
![]() |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 280V; 21A; Idm: 84A; 85W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 280V
Drain current: 21A
Power dissipation: 85W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Gate charge: 20.5nC
Pulsed drain current: 84A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 280V; 21A; Idm: 84A; 85W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 280V
Drain current: 21A
Power dissipation: 85W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Gate charge: 20.5nC
Pulsed drain current: 84A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.76 EUR |
| 25+ | 2.86 EUR |
| 100+ | 1.3 EUR |
| P22F10SN-5600 |
![]() |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 22A; Idm: 66A; 35W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 66A
Power dissipation: 35W
Case: FTO-220AG (SC91)
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: bulk
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 22A; Idm: 66A; 35W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 66A
Power dissipation: 35W
Case: FTO-220AG (SC91)
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.17 EUR |
| P22F10SN-5600 |
![]() |
Hersteller: Shindengen
MOSFETs EETMOS series Power MOSFET Through Hole
MOSFETs EETMOS series Power MOSFET Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P22F10SN-5600 |
![]() |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 22A; Idm: 66A; 35W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 66A
Power dissipation: 35W
Case: FTO-220AG (SC91)
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: bulk
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 22A; Idm: 66A; 35W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 66A
Power dissipation: 35W
Case: FTO-220AG (SC91)
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: bulk
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.17 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.53 EUR |
| P22FE4SBK-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 22A; Idm: 66A; 24W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 66A
Power dissipation: 24W
Case: FE (TO252AB similar)
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 22A; Idm: 66A; 24W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 66A
Power dissipation: 24W
Case: FE (TO252AB similar)
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P24B4SB-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 24A; Idm: 72A; 20W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 16.5nC
On-state resistance: 18.5mΩ
Drain current: 24A
Power dissipation: 20W
Gate-source voltage: ±20V
Pulsed drain current: 72A
Drain-source voltage: 40V
Mounting: SMD
Technology: EETMOS3
Kind of channel: enhancement
Case: FB (TO252AA)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 24A; Idm: 72A; 20W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 16.5nC
On-state resistance: 18.5mΩ
Drain current: 24A
Power dissipation: 20W
Gate-source voltage: ±20V
Pulsed drain current: 72A
Drain-source voltage: 40V
Mounting: SMD
Technology: EETMOS3
Kind of channel: enhancement
Case: FB (TO252AA)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P25B6EB-5071 |
![]() |
Hersteller: Shindengen
MOSFET High Switching Speed
MOSFET High Switching Speed
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P25B6EB-5071 |
Hersteller: SHINDENGEN
P25B6EB-5071 SMD N channel transistors
P25B6EB-5071 SMD N channel transistors
auf Bestellung 81 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 119+ | 0.6 EUR |
| 3000+ | 0.36 EUR |
| P25LA12SL-5070 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 142W
Technology: EETMOS3
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 61nC
On-state resistance: 30mΩ
Drain current: 25A
Gate-source voltage: ±20V
Pulsed drain current: 75A
Power dissipation: 142W
Drain-source voltage: 120V
Case: LA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 142W
Technology: EETMOS3
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 61nC
On-state resistance: 30mΩ
Drain current: 25A
Gate-source voltage: ±20V
Pulsed drain current: 75A
Power dissipation: 142W
Drain-source voltage: 120V
Case: LA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P25LF12SL-5071 |
Hersteller: SHINDENGEN
P25LF12SL-5071 SMD N channel transistors
P25LF12SL-5071 SMD N channel transistors
auf Bestellung 95 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 83+ | 0.87 EUR |
| 95+ | 0.76 EUR |
| 500+ | 0.62 EUR |
| P25LF12SLK-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 168W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 25A
Pulsed drain current: 75A
Power dissipation: 168W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 168W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 25A
Pulsed drain current: 75A
Power dissipation: 168W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P25LF12SN-5071 |
Hersteller: SHINDENGEN
P25LF12SN-5071 SMD N channel transistors
P25LF12SN-5071 SMD N channel transistors
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.8 EUR |
| 59+ | 1.23 EUR |
| 62+ | 1.16 EUR |
| P25LF12SNK-5071 |
![]() |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 168W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 25A
Pulsed drain current: 75A
Power dissipation: 168W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 168W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 25A
Pulsed drain current: 75A
Power dissipation: 168W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P26B10SL-5071 |
![]() |
Hersteller: Shindengen
MOSFETs EETMOS series Power MOSFET SMD
MOSFETs EETMOS series Power MOSFET SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH











