Produkte > SHINDENGEN > Alle Produkte des Herstellers SHINDENGEN (3660) > Seite 38 nach 61
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
P15F50HP2-5600 | SHINDENGEN | P15F50HP2-5600 THT N channel transistors |
auf Bestellung 171 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
P15F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 60A Power dissipation: 95W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 490mΩ Mounting: THT Gate charge: 37nC Kind of package: bulk Kind of channel: enhanced |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
P15F60HP2-5600 | Shindengen | MOSFET Mosfet |
Produkt ist nicht verfügbar |
||||||||||||||||
P15F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 60A Power dissipation: 95W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 490mΩ Mounting: THT Gate charge: 37nC Kind of package: bulk Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 68 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
P15F60HP2F-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 60A Power dissipation: 95W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 34nC Kind of package: bulk Kind of channel: enhanced |
auf Bestellung 496 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
P15F60HP2F-5600 | Shindengen | MOSFET Hi-PotMOS Power MOSFET Through Hole |
Produkt ist nicht verfügbar |
||||||||||||||||
P15F60HP2F-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 60A Power dissipation: 95W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 34nC Kind of package: bulk Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 496 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
P15LA12SL-5070 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 15A; Idm: 45A; 83W; LA Mounting: SMD Drain-source voltage: 120V Drain current: 15A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Kind of package: reel; tape Gate charge: 38.5nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 45A Case: LA |
Produkt ist nicht verfügbar |
||||||||||||||||
P15LA12SL-5070 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 15A; Idm: 45A; 83W; LA Mounting: SMD Drain-source voltage: 120V Drain current: 15A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Kind of package: reel; tape Gate charge: 38.5nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 45A Case: LA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
P15LF6QTKD-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 45A; 35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Pulsed drain current: 45A Power dissipation: 35W Case: LF (MO235B similar) Gate-source voltage: ±10V On-state resistance: 30mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
P15LF6QTKD-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 45A; 35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Pulsed drain current: 45A Power dissipation: 35W Case: LF (MO235B similar) Gate-source voltage: ±10V On-state resistance: 30mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
P16B6SB-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Pulsed drain current: 48A Power dissipation: 20W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2722 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
P16B6SB-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Pulsed drain current: 48A Power dissipation: 20W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2722 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
P16B6SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 48A; 23W Kind of package: reel; tape Polarisation: unipolar Case: FB (TO252AA) Mounting: SMD Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 48A Drain current: 16A On-state resistance: 37mΩ Type of transistor: N-MOSFET Drain-source voltage: 60V Power dissipation: 23W |
Produkt ist nicht verfügbar |
||||||||||||||||
P16B6SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 48A; 23W Kind of package: reel; tape Polarisation: unipolar Case: FB (TO252AA) Mounting: SMD Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 48A Drain current: 16A On-state resistance: 37mΩ Type of transistor: N-MOSFET Drain-source voltage: 60V Power dissipation: 23W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
P170FZ6QNKA-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 170A; Idm: 510A; 178W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 170A Pulsed drain current: 510A Power dissipation: 178W Case: FZ7 (TO263SC); FZ (TO236AB) Gate-source voltage: ±10V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
P170FZ6QNKA-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 170A; Idm: 510A; 178W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 170A Pulsed drain current: 510A Power dissipation: 178W Case: FZ7 (TO263SC); FZ (TO236AB) Gate-source voltage: ±10V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
P17F28HP2-5600 | SHINDENGEN | P17F28HP2-5600 THT N channel transistors |
auf Bestellung 73 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
P17LF10SLKD-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 51A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 17A Pulsed drain current: 51A Power dissipation: 62W Case: LF (MO235B similar) Gate-source voltage: ±10V On-state resistance: 36mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
P17LF10SLKD-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 51A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 17A Pulsed drain current: 51A Power dissipation: 62W Case: LF (MO235B similar) Gate-source voltage: ±10V On-state resistance: 36mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
P180FZ4GNKA-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; FZ (TO236AB) Type of transistor: N-MOSFET Case: FZ (TO236AB) Mounting: SMD |
Produkt ist nicht verfügbar |
||||||||||||||||
P18LA12SL-5070 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA Mounting: SMD Drain-source voltage: 120V Drain current: 18A On-state resistance: 44mΩ Type of transistor: N-MOSFET Power dissipation: 99W Polarisation: unipolar Kind of package: reel; tape Gate charge: 47nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A Case: LA |
Produkt ist nicht verfügbar |
||||||||||||||||
P18LA12SL-5070 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA Mounting: SMD Drain-source voltage: 120V Drain current: 18A On-state resistance: 44mΩ Type of transistor: N-MOSFET Power dissipation: 99W Polarisation: unipolar Kind of package: reel; tape Gate charge: 47nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A Case: LA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
P18LF6QLK-5071 | SHINDENGEN | P18LF6QLK-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||
P18LF6QNK-5071 | SHINDENGEN | P18LF6QNK-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||
P19LA10SL-5070 | SHINDENGEN | P19LA10SL-5070 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||
P1B52HP2-5071 | SHINDENGEN | P1B52HP2-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||
P1FE90VX3-5071 | SHINDENGEN | P1FE90VX3-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||
P1FE90VX4-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; FE (TO252AB similar) Type of transistor: N-MOSFET Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
||||||||||||||||
P1FE90VX4-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; FE (TO252AB similar) Type of transistor: N-MOSFET Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
P1R5B40HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W Mounting: SMD Power dissipation: 35W Polarisation: unipolar Kind of package: reel; tape Gate charge: 3.9nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6A Case: FB (TO252AA) Drain-source voltage: 400V Drain current: 1.5A On-state resistance: 5Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
||||||||||||||||
P1R5B40HP2-5071 | Shindengen | MOSFET Hi-PotMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
||||||||||||||||
P1R5B40HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W Mounting: SMD Power dissipation: 35W Polarisation: unipolar Kind of package: reel; tape Gate charge: 3.9nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6A Case: FB (TO252AA) Drain-source voltage: 400V Drain current: 1.5A On-state resistance: 5Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
P20B12SL-5071 | SHINDENGEN | P20B12SL-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||
P20B12SN-5071 | SHINDENGEN | P20B12SN-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||
P20F50HP2-5600 | Shindengen | MOSFET High Switching Speed High Voltage |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
P20F50HP2-5600 | SHINDENGEN | P20F50HP2-5600 THT N channel transistors |
auf Bestellung 1425 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
P20FE12SLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 20A; Idm: 60A; 44W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 20A Pulsed drain current: 60A Power dissipation: 44W Case: FE (TO252AB similar) Gate-source voltage: ±20V On-state resistance: 44mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
||||||||||||||||
P20FE12SLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 20A; Idm: 60A; 44W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 20A Pulsed drain current: 60A Power dissipation: 44W Case: FE (TO252AB similar) Gate-source voltage: ±20V On-state resistance: 44mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
P20LF4QTKD-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 20A; Idm: 60A; 35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 20A Pulsed drain current: 60A Power dissipation: 35W Case: LF (MO235B similar) Gate-source voltage: ±10V On-state resistance: 15.3mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||
P20LF4QTKD-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 20A; Idm: 60A; 35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 20A Pulsed drain current: 60A Power dissipation: 35W Case: LF (MO235B similar) Gate-source voltage: ±10V On-state resistance: 15.3mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
P211FZ4QMKA-5071 | SHINDENGEN | P211FZ4QMKA-5071 SMD N channel transistors |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
P21F28HP2-5600 | Shindengen | MOSFET 280V, 21A Hi-PotMOS MOSFET |
Produkt ist nicht verfügbar |
||||||||||||||||
P21F28HP2-5600 | SHINDENGEN | P21F28HP2-5600 THT N channel transistors |
auf Bestellung 49 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
P22F10SN-5600 | SHINDENGEN | P22F10SN-5600 THT N channel transistors |
auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
P22FE4SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 22A; Idm: 66A; 24W Kind of package: reel; tape Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Gate charge: 16.5nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 66A Drain current: 22A On-state resistance: 19mΩ Type of transistor: N-MOSFET Drain-source voltage: 40V Application: automotive industry Power dissipation: 24W |
Produkt ist nicht verfügbar |
||||||||||||||||
P22FE4SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 22A; Idm: 66A; 24W Kind of package: reel; tape Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Gate charge: 16.5nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 66A Drain current: 22A On-state resistance: 19mΩ Type of transistor: N-MOSFET Drain-source voltage: 40V Application: automotive industry Power dissipation: 24W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
P23F40HP2FM-5600 | SHINDENGEN | P23F40HP2FM-5600 THT N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||
P23LA10SL-5070 | SHINDENGEN | P23LA10SL-5070 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||
P240FZ4QLA-5071 | SHINDENGEN | P240FZ4QLA-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||
P240FZ4QNKA-5071 | SHINDENGEN | P240FZ4QNKA-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||
P24B15SL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; FB (TO252AA) Mounting: SMD Type of transistor: N-MOSFET Case: FB (TO252AA) |
Produkt ist nicht verfügbar |
||||||||||||||||
P24B15SL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; FB (TO252AA) Mounting: SMD Type of transistor: N-MOSFET Case: FB (TO252AA) Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
P24B4SB-5071 | SHINDENGEN | P24B4SB-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||
P24LF4QLK-5071 | SHINDENGEN | P24LF4QLK-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||
P24LF4QMK-5071 | SHINDENGEN | P24LF4QMK-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||
P24LF4QNK-5071 | SHINDENGEN | P24LF4QNK-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||
P25B6EB-5071 | Shindengen | MOSFET High Switching Speed |
Produkt ist nicht verfügbar |
||||||||||||||||
P25B6EB-5071 | SHINDENGEN | P25B6EB-5071 SMD N channel transistors |
auf Bestellung 544 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
P25LA12SL-5070 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 142W Mounting: SMD Drain-source voltage: 120V Drain current: 25A On-state resistance: 30mΩ Type of transistor: N-MOSFET Power dissipation: 142W Polarisation: unipolar Kind of package: reel; tape Gate charge: 61nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 75A Case: LA |
Produkt ist nicht verfügbar |
P15F50HP2-5600 |
Hersteller: SHINDENGEN
P15F50HP2-5600 THT N channel transistors
P15F50HP2-5600 THT N channel transistors
auf Bestellung 171 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 1.46 EUR |
67+ | 1.07 EUR |
71+ | 1.02 EUR |
P15F60HP2-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 490mΩ
Mounting: THT
Gate charge: 37nC
Kind of package: bulk
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 490mΩ
Mounting: THT
Gate charge: 37nC
Kind of package: bulk
Kind of channel: enhanced
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 2.69 EUR |
30+ | 2.42 EUR |
39+ | 1.87 EUR |
41+ | 1.77 EUR |
P15F60HP2-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 490mΩ
Mounting: THT
Gate charge: 37nC
Kind of package: bulk
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 490mΩ
Mounting: THT
Gate charge: 37nC
Kind of package: bulk
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 2.69 EUR |
30+ | 2.42 EUR |
39+ | 1.87 EUR |
41+ | 1.77 EUR |
P15F60HP2F-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: bulk
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: bulk
Kind of channel: enhanced
auf Bestellung 496 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 2.16 EUR |
37+ | 1.94 EUR |
46+ | 1.57 EUR |
49+ | 1.49 EUR |
P15F60HP2F-5600 |
Hersteller: Shindengen
MOSFET Hi-PotMOS Power MOSFET Through Hole
MOSFET Hi-PotMOS Power MOSFET Through Hole
Produkt ist nicht verfügbar
P15F60HP2F-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: bulk
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 15A; Idm: 60A; 95W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: bulk
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 496 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 2.16 EUR |
37+ | 1.94 EUR |
46+ | 1.57 EUR |
49+ | 1.49 EUR |
P15LA12SL-5070 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 15A; Idm: 45A; 83W; LA
Mounting: SMD
Drain-source voltage: 120V
Drain current: 15A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38.5nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 45A
Case: LA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 15A; Idm: 45A; 83W; LA
Mounting: SMD
Drain-source voltage: 120V
Drain current: 15A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38.5nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 45A
Case: LA
Produkt ist nicht verfügbar
P15LA12SL-5070 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 15A; Idm: 45A; 83W; LA
Mounting: SMD
Drain-source voltage: 120V
Drain current: 15A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38.5nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 45A
Case: LA
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 15A; Idm: 45A; 83W; LA
Mounting: SMD
Drain-source voltage: 120V
Drain current: 15A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38.5nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 45A
Case: LA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P15LF6QTKD-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 45A; 35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 45A
Power dissipation: 35W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 45A; 35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 45A
Power dissipation: 35W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
P15LF6QTKD-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 45A; 35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 45A
Power dissipation: 35W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 45A; 35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 45A
Power dissipation: 35W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P16B6SB-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Pulsed drain current: 48A
Power dissipation: 20W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Pulsed drain current: 48A
Power dissipation: 20W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2722 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
109+ | 0.66 EUR |
121+ | 0.59 EUR |
159+ | 0.45 EUR |
169+ | 0.43 EUR |
P16B6SB-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Pulsed drain current: 48A
Power dissipation: 20W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Pulsed drain current: 48A
Power dissipation: 20W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2722 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
109+ | 0.66 EUR |
121+ | 0.59 EUR |
159+ | 0.45 EUR |
169+ | 0.43 EUR |
P16B6SBK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 48A; 23W
Kind of package: reel; tape
Polarisation: unipolar
Case: FB (TO252AA)
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 48A
Drain current: 16A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Power dissipation: 23W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 48A; 23W
Kind of package: reel; tape
Polarisation: unipolar
Case: FB (TO252AA)
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 48A
Drain current: 16A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Power dissipation: 23W
Produkt ist nicht verfügbar
P16B6SBK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 48A; 23W
Kind of package: reel; tape
Polarisation: unipolar
Case: FB (TO252AA)
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 48A
Drain current: 16A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Power dissipation: 23W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 48A; 23W
Kind of package: reel; tape
Polarisation: unipolar
Case: FB (TO252AA)
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 48A
Drain current: 16A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Power dissipation: 23W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P170FZ6QNKA-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 170A; Idm: 510A; 178W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 170A
Pulsed drain current: 510A
Power dissipation: 178W
Case: FZ7 (TO263SC); FZ (TO236AB)
Gate-source voltage: ±10V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 170A; Idm: 510A; 178W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 170A
Pulsed drain current: 510A
Power dissipation: 178W
Case: FZ7 (TO263SC); FZ (TO236AB)
Gate-source voltage: ±10V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
P170FZ6QNKA-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 170A; Idm: 510A; 178W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 170A
Pulsed drain current: 510A
Power dissipation: 178W
Case: FZ7 (TO263SC); FZ (TO236AB)
Gate-source voltage: ±10V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 170A; Idm: 510A; 178W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 170A
Pulsed drain current: 510A
Power dissipation: 178W
Case: FZ7 (TO263SC); FZ (TO236AB)
Gate-source voltage: ±10V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P17F28HP2-5600 |
Hersteller: SHINDENGEN
P17F28HP2-5600 THT N channel transistors
P17F28HP2-5600 THT N channel transistors
auf Bestellung 73 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 1.57 EUR |
61+ | 1.19 EUR |
65+ | 1.12 EUR |
500+ | 1.07 EUR |
P17LF10SLKD-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 51A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 51A
Power dissipation: 62W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 51A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 51A
Power dissipation: 62W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
P17LF10SLKD-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 51A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 51A
Power dissipation: 62W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 51A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 51A
Power dissipation: 62W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P180FZ4GNKA-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; FZ (TO236AB)
Type of transistor: N-MOSFET
Case: FZ (TO236AB)
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; FZ (TO236AB)
Type of transistor: N-MOSFET
Case: FZ (TO236AB)
Mounting: SMD
Produkt ist nicht verfügbar
P18LA12SL-5070 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA
Mounting: SMD
Drain-source voltage: 120V
Drain current: 18A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Power dissipation: 99W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Case: LA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA
Mounting: SMD
Drain-source voltage: 120V
Drain current: 18A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Power dissipation: 99W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Case: LA
Produkt ist nicht verfügbar
P18LA12SL-5070 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA
Mounting: SMD
Drain-source voltage: 120V
Drain current: 18A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Power dissipation: 99W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Case: LA
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA
Mounting: SMD
Drain-source voltage: 120V
Drain current: 18A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Power dissipation: 99W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Case: LA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P18LF6QLK-5071 |
Hersteller: SHINDENGEN
P18LF6QLK-5071 SMD N channel transistors
P18LF6QLK-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P18LF6QNK-5071 |
Hersteller: SHINDENGEN
P18LF6QNK-5071 SMD N channel transistors
P18LF6QNK-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P19LA10SL-5070 |
Hersteller: SHINDENGEN
P19LA10SL-5070 SMD N channel transistors
P19LA10SL-5070 SMD N channel transistors
Produkt ist nicht verfügbar
P1B52HP2-5071 |
Hersteller: SHINDENGEN
P1B52HP2-5071 SMD N channel transistors
P1B52HP2-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P1FE90VX3-5071 |
Hersteller: SHINDENGEN
P1FE90VX3-5071 SMD N channel transistors
P1FE90VX3-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P1FE90VX4-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; FE (TO252AB similar)
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; FE (TO252AB similar)
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
P1FE90VX4-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; FE (TO252AB similar)
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; FE (TO252AB similar)
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P1R5B40HP2-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W
Mounting: SMD
Power dissipation: 35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3.9nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6A
Case: FB (TO252AA)
Drain-source voltage: 400V
Drain current: 1.5A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W
Mounting: SMD
Power dissipation: 35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3.9nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6A
Case: FB (TO252AA)
Drain-source voltage: 400V
Drain current: 1.5A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
P1R5B40HP2-5071 |
Hersteller: Shindengen
MOSFET Hi-PotMOS series Power MOSFET SMD
MOSFET Hi-PotMOS series Power MOSFET SMD
Produkt ist nicht verfügbar
P1R5B40HP2-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W
Mounting: SMD
Power dissipation: 35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3.9nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6A
Case: FB (TO252AA)
Drain-source voltage: 400V
Drain current: 1.5A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W
Mounting: SMD
Power dissipation: 35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3.9nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6A
Case: FB (TO252AA)
Drain-source voltage: 400V
Drain current: 1.5A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P20B12SL-5071 |
Hersteller: SHINDENGEN
P20B12SL-5071 SMD N channel transistors
P20B12SL-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P20B12SN-5071 |
Hersteller: SHINDENGEN
P20B12SN-5071 SMD N channel transistors
P20B12SN-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P20F50HP2-5600 |
Hersteller: Shindengen
MOSFET High Switching Speed High Voltage
MOSFET High Switching Speed High Voltage
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 8.11 EUR |
10+ | 6.83 EUR |
50+ | 6.46 EUR |
100+ | 5.47 EUR |
200+ | 5.19 EUR |
500+ | 4.89 EUR |
1000+ | 4.19 EUR |
P20F50HP2-5600 |
Hersteller: SHINDENGEN
P20F50HP2-5600 THT N channel transistors
P20F50HP2-5600 THT N channel transistors
auf Bestellung 1425 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
41+ | 1.77 EUR |
53+ | 1.36 EUR |
56+ | 1.29 EUR |
500+ | 1.23 EUR |
P20FE12SLK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 20A; Idm: 60A; 44W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 44W
Case: FE (TO252AB similar)
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 20A; Idm: 60A; 44W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 44W
Case: FE (TO252AB similar)
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
P20FE12SLK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 20A; Idm: 60A; 44W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 44W
Case: FE (TO252AB similar)
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 20A; Idm: 60A; 44W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 44W
Case: FE (TO252AB similar)
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P20LF4QTKD-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; Idm: 60A; 35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 35W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; Idm: 60A; 35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 35W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
P20LF4QTKD-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; Idm: 60A; 35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 35W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; Idm: 60A; 35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 35W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P211FZ4QMKA-5071 |
Hersteller: SHINDENGEN
P211FZ4QMKA-5071 SMD N channel transistors
P211FZ4QMKA-5071 SMD N channel transistors
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 2.39 EUR |
41+ | 1.76 EUR |
44+ | 1.66 EUR |
500+ | 1.6 EUR |
P21F28HP2-5600 |
Hersteller: SHINDENGEN
P21F28HP2-5600 THT N channel transistors
P21F28HP2-5600 THT N channel transistors
auf Bestellung 49 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 2 EUR |
49+ | 1.46 EUR |
500+ | 1.37 EUR |
P22F10SN-5600 |
Hersteller: SHINDENGEN
P22F10SN-5600 THT N channel transistors
P22F10SN-5600 THT N channel transistors
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 2.04 EUR |
81+ | 0.89 EUR |
500+ | 0.66 EUR |
P22FE4SBK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 22A; Idm: 66A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.5nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Drain current: 22A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Application: automotive industry
Power dissipation: 24W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 22A; Idm: 66A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.5nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Drain current: 22A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Application: automotive industry
Power dissipation: 24W
Produkt ist nicht verfügbar
P22FE4SBK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 22A; Idm: 66A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.5nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Drain current: 22A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Application: automotive industry
Power dissipation: 24W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 22A; Idm: 66A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.5nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Drain current: 22A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Application: automotive industry
Power dissipation: 24W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P23F40HP2FM-5600 |
Hersteller: SHINDENGEN
P23F40HP2FM-5600 THT N channel transistors
P23F40HP2FM-5600 THT N channel transistors
Produkt ist nicht verfügbar
P23LA10SL-5070 |
Hersteller: SHINDENGEN
P23LA10SL-5070 SMD N channel transistors
P23LA10SL-5070 SMD N channel transistors
Produkt ist nicht verfügbar
P240FZ4QLA-5071 |
Hersteller: SHINDENGEN
P240FZ4QLA-5071 SMD N channel transistors
P240FZ4QLA-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P240FZ4QNKA-5071 |
Hersteller: SHINDENGEN
P240FZ4QNKA-5071 SMD N channel transistors
P240FZ4QNKA-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P24B15SL-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; FB (TO252AA)
Mounting: SMD
Type of transistor: N-MOSFET
Case: FB (TO252AA)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; FB (TO252AA)
Mounting: SMD
Type of transistor: N-MOSFET
Case: FB (TO252AA)
Produkt ist nicht verfügbar
P24B15SL-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; FB (TO252AA)
Mounting: SMD
Type of transistor: N-MOSFET
Case: FB (TO252AA)
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; FB (TO252AA)
Mounting: SMD
Type of transistor: N-MOSFET
Case: FB (TO252AA)
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P24B4SB-5071 |
Hersteller: SHINDENGEN
P24B4SB-5071 SMD N channel transistors
P24B4SB-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P24LF4QLK-5071 |
Hersteller: SHINDENGEN
P24LF4QLK-5071 SMD N channel transistors
P24LF4QLK-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P24LF4QMK-5071 |
Hersteller: SHINDENGEN
P24LF4QMK-5071 SMD N channel transistors
P24LF4QMK-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P24LF4QNK-5071 |
Hersteller: SHINDENGEN
P24LF4QNK-5071 SMD N channel transistors
P24LF4QNK-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P25B6EB-5071 |
Hersteller: SHINDENGEN
P25B6EB-5071 SMD N channel transistors
P25B6EB-5071 SMD N channel transistors
auf Bestellung 544 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
134+ | 0.54 EUR |
186+ | 0.39 EUR |
196+ | 0.37 EUR |
3000+ | 0.36 EUR |
P25LA12SL-5070 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 142W
Mounting: SMD
Drain-source voltage: 120V
Drain current: 25A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 142W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 61nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Case: LA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 25A; Idm: 75A; 142W
Mounting: SMD
Drain-source voltage: 120V
Drain current: 25A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 142W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 61nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Case: LA
Produkt ist nicht verfügbar