Produkte > SHINDENGEN > Alle Produkte des Herstellers SHINDENGEN (3663) > Seite 41 nach 62
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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P5B52HP2-5071 | SHINDENGEN | P5B52HP2-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
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P5F50HP2-5600 | Shindengen | MOSFET High Switching Speed High Voltage |
auf Bestellung 82 Stücke: Lieferzeit 10-14 Tag (e) |
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P5F50HP2-5600 | SHINDENGEN | P5F50HP2-5600 THT N channel transistors |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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P5F50HP2F-5600 | SHINDENGEN | P5F50HP2F-5600 THT N channel transistors |
auf Bestellung 72 Stücke: Lieferzeit 7-14 Tag (e) |
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P5F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 5A; Idm: 20A; 65W Type of transistor: N-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: bulk Gate charge: 15nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 20A Mounting: THT Case: FTO-220AG (SC91) Drain-source voltage: 600V Drain current: 5A On-state resistance: 1.4Ω |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
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P5F60HP2-5600 | Shindengen | MOSFET High Switching Speed High Voltage |
Produkt ist nicht verfügbar |
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P5F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 5A; Idm: 20A; 65W Type of transistor: N-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: bulk Gate charge: 15nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 20A Mounting: THT Case: FTO-220AG (SC91) Drain-source voltage: 600V Drain current: 5A On-state resistance: 1.4Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 49 Stücke: Lieferzeit 7-14 Tag (e) |
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P60B10SB-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; FB (TO252AA) Case: FB (TO252AA) Kind of package: reel; tape Mounting: SMD Technology: EETMOS3 Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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P60B10SB-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; FB (TO252AA) Case: FB (TO252AA) Kind of package: reel; tape Mounting: SMD Technology: EETMOS3 Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P60B4EL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 60A; Idm: 240A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 240A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 686 Stücke: Lieferzeit 14-21 Tag (e) |
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P60B4EL-5071 | Shindengen | MOSFET 40V, 60A EETMOS POWER MOSFET |
Produkt ist nicht verfügbar |
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P60B4EL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 60A; Idm: 240A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 240A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 686 Stücke: Lieferzeit 7-14 Tag (e) |
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P60B4SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 60A; Idm: 180A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 180A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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P60B4SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 60A; Idm: 180A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 180A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P60B6EL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 240A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2888 Stücke: Lieferzeit 14-21 Tag (e) |
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P60B6EL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 240A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2888 Stücke: Lieferzeit 7-14 Tag (e) |
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P60B6EN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 240A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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P60B6EN-5071 | Shindengen | MOSFET 60V, 60A EETMOS POWER MOSFET |
Produkt ist nicht verfügbar |
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P60B6EN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 240A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P60B6SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 60A; Idm: 180A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 180A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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P60B6SN-5071 | Shindengen | MOSFET EETMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
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P60B6SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 60A; Idm: 180A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 180A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P64LF6QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 64A; Idm: 192A; 168W Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 5.7mΩ Pulsed drain current: 192A Power dissipation: 168W Gate charge: 77nC Polarisation: unipolar Technology: EETMOS4 Drain current: 64A Kind of channel: enhanced Drain-source voltage: 60V |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
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P64LF6QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 64A; Idm: 192A; 168W Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 5.7mΩ Pulsed drain current: 192A Power dissipation: 168W Gate charge: 77nC Polarisation: unipolar Technology: EETMOS4 Drain current: 64A Kind of channel: enhanced Drain-source voltage: 60V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 67 Stücke: Lieferzeit 7-14 Tag (e) |
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P64LF6QLK-5071 | SHINDENGEN | P64LF6QLK-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
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P64LF6QN-5071 | SHINDENGEN | P64LF6QN-5071 SMD N channel transistors |
auf Bestellung 89 Stücke: Lieferzeit 7-14 Tag (e) |
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P64LF6QNK-5071 | SHINDENGEN | P64LF6QNK-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
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P66F7R5SN-5600 | SHINDENGEN | P66F7R5SN-5600 THT N channel transistors |
auf Bestellung 85 Stücke: Lieferzeit 7-14 Tag (e) |
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P66F7R5SNK-5600 | SHINDENGEN | P66F7R5SNK-5600 THT N channel transistors |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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P6B28HP2-5071 | SHINDENGEN | P6B28HP2-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
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P6B40HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 6A; Idm: 24A; 54W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 400V Drain current: 6A Pulsed drain current: 24A Power dissipation: 54W Case: FB (TO252AA) Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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P6B40HP2-5071 | Shindengen | MOSFET Hi-PotMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
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P6B40HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 6A; Idm: 24A; 54W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 400V Drain current: 6A Pulsed drain current: 24A Power dissipation: 54W Case: FB (TO252AA) Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P6B52HP2-5071 | Shindengen | MOSFET Hi Voltage Low Noise |
Produkt ist nicht verfügbar |
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P6B52HP2-5071 | SHINDENGEN | P6B52HP2-5071 SMD N channel transistors |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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P6F50HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 6A; Idm: 24A Drain-source voltage: 500V Drain current: 6A Case: FTO-220AG (SC91) Mounting: THT Polarisation: unipolar On-state resistance: 1.35Ω Pulsed drain current: 24A Power dissipation: 62.5W Technology: Hi-PotMOS2 Kind of channel: enhanced Gate charge: 15nC Gate-source voltage: ±30V Kind of package: bulk Type of transistor: N-MOSFET |
auf Bestellung 172 Stücke: Lieferzeit 14-21 Tag (e) |
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P6F50HP2-5600 | Shindengen | MOSFET High Switching Speed High Voltage |
Produkt ist nicht verfügbar |
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P6F50HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 6A; Idm: 24A Drain-source voltage: 500V Drain current: 6A Case: FTO-220AG (SC91) Mounting: THT Polarisation: unipolar On-state resistance: 1.35Ω Pulsed drain current: 24A Power dissipation: 62.5W Technology: Hi-PotMOS2 Kind of channel: enhanced Gate charge: 15nC Gate-source voltage: ±30V Kind of package: bulk Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 172 Stücke: Lieferzeit 7-14 Tag (e) |
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P6FE25VX5K-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 6A; Idm: 24A; 27W Mounting: SMD Case: FE (TO252AB similar) Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 24A Power dissipation: 27W Drain-source voltage: 250V Drain current: 6A On-state resistance: 0.7Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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P6FE25VX5K-5061 | Shindengen | MOSFET Hi-PotMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
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P6FE25VX5K-5071 | Shindengen | MOSFET Hi-PotMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
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P6FE25VX5K-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 6A; Idm: 24A; 27W Mounting: SMD Case: FE (TO252AB similar) Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 24A Power dissipation: 27W Drain-source voltage: 250V Drain current: 6A On-state resistance: 0.7Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P70F5EN-5600 | Shindengen | MOSFET 50V, 70A EETMOS POWER MOSFET |
Produkt ist nicht verfügbar |
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P70F5EN-5600 | SHINDENGEN | P70F5EN-5600 THT N channel transistors |
auf Bestellung 99 Stücke: Lieferzeit 7-14 Tag (e) |
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P70F7R5EN-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 75V; 70A; Idm: 280A; 53W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 75V Drain current: 70A Pulsed drain current: 280A Power dissipation: 53W Case: FTO-220AG (SC91) Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: THT Gate charge: 105nC Kind of package: bulk Kind of channel: enhanced |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
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P70F7R5EN-5600 | Shindengen | MOSFET 75V, 70A EETMOS POWER MOSFET |
Produkt ist nicht verfügbar |
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P70F7R5EN-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 75V; 70A; Idm: 280A; 53W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 75V Drain current: 70A Pulsed drain current: 280A Power dissipation: 53W Case: FTO-220AG (SC91) Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: THT Gate charge: 105nC Kind of package: bulk Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 88 Stücke: Lieferzeit 7-14 Tag (e) |
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P70FP12SN-5071 | SHINDENGEN | P70FP12SN-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
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P70FP12SNK-5071 | SHINDENGEN | P70FP12SNK-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
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P70LF4QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 70A; Idm: 210A; 123W Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 4.5mΩ Pulsed drain current: 210A Power dissipation: 123W Gate charge: 49nC Polarisation: unipolar Technology: EETMOS4 Drain current: 70A Kind of channel: enhanced Drain-source voltage: 40V |
Produkt ist nicht verfügbar |
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P70LF4QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 70A; Idm: 210A; 123W Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 4.5mΩ Pulsed drain current: 210A Power dissipation: 123W Gate charge: 49nC Polarisation: unipolar Technology: EETMOS4 Drain current: 70A Kind of channel: enhanced Drain-source voltage: 40V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P70LF4QLK-5071 | SHINDENGEN | P70LF4QLK-5071 SMD N channel transistors |
auf Bestellung 45 Stücke: Lieferzeit 7-14 Tag (e) |
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P70LF4QN-5071 | SHINDENGEN | P70LF4QN-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
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P70LF4QNK-5071 | SHINDENGEN | P70LF4QNK-5071 SMD N channel transistors |
auf Bestellung 5000 Stücke: Lieferzeit 7-14 Tag (e) |
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P72LF7R5SL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 75V Drain current: 72A Pulsed drain current: 288A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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P72LF7R5SL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 75V Drain current: 72A Pulsed drain current: 288A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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P72LF7R5SLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 75V Drain current: 72A Pulsed drain current: 288A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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P72LF7R5SLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 75V Drain current: 72A Pulsed drain current: 288A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P72LF7R5SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 75V Drain current: 72A Pulsed drain current: 288A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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P72LF7R5SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 75V Drain current: 72A Pulsed drain current: 288A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
P5B52HP2-5071 |
Hersteller: SHINDENGEN
P5B52HP2-5071 SMD N channel transistors
P5B52HP2-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P5F50HP2-5600 |
Hersteller: Shindengen
MOSFET High Switching Speed High Voltage
MOSFET High Switching Speed High Voltage
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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1+ | 3.24 EUR |
10+ | 2.68 EUR |
100+ | 2.13 EUR |
200+ | 1.95 EUR |
500+ | 1.78 EUR |
1000+ | 1.53 EUR |
2000+ | 1.45 EUR |
P5F50HP2-5600 |
Hersteller: SHINDENGEN
P5F50HP2-5600 THT N channel transistors
P5F50HP2-5600 THT N channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
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70+ | 1.03 EUR |
100+ | 0.72 EUR |
500+ | 0.58 EUR |
P5F50HP2F-5600 |
Hersteller: SHINDENGEN
P5F50HP2F-5600 THT N channel transistors
P5F50HP2F-5600 THT N channel transistors
auf Bestellung 72 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 1.15 EUR |
72+ | 0.99 EUR |
87+ | 0.82 EUR |
500+ | 0.62 EUR |
P5F60HP2-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 5A; Idm: 20A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 20A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 600V
Drain current: 5A
On-state resistance: 1.4Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 5A; Idm: 20A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 20A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 600V
Drain current: 5A
On-state resistance: 1.4Ω
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
49+ | 1.46 EUR |
P5F60HP2-5600 |
Hersteller: Shindengen
MOSFET High Switching Speed High Voltage
MOSFET High Switching Speed High Voltage
Produkt ist nicht verfügbar
P5F60HP2-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 5A; Idm: 20A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 20A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 600V
Drain current: 5A
On-state resistance: 1.4Ω
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 5A; Idm: 20A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 20A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 600V
Drain current: 5A
On-state resistance: 1.4Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 49 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
49+ | 1.46 EUR |
65+ | 1.1 EUR |
P60B10SB-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FB (TO252AA)
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FB (TO252AA)
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Produkt ist nicht verfügbar
P60B10SB-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FB (TO252AA)
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FB (TO252AA)
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P60B4EL-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 686 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
73+ | 0.99 EUR |
107+ | 0.67 EUR |
112+ | 0.64 EUR |
114+ | 0.63 EUR |
P60B4EL-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 686 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
73+ | 0.99 EUR |
107+ | 0.67 EUR |
112+ | 0.64 EUR |
114+ | 0.63 EUR |
P60B4SN-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 60A; Idm: 180A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 60A; Idm: 180A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
P60B4SN-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 60A; Idm: 180A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 60A; Idm: 180A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P60B6EL-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2888 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
75+ | 0.96 EUR |
83+ | 0.87 EUR |
109+ | 0.66 EUR |
117+ | 0.61 EUR |
P60B6EL-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2888 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
75+ | 0.96 EUR |
83+ | 0.87 EUR |
109+ | 0.66 EUR |
117+ | 0.61 EUR |
P60B6EN-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
P60B6EN-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P60B6SN-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 60A; Idm: 180A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 60A; Idm: 180A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
P60B6SN-5071 |
Hersteller: Shindengen
MOSFET EETMOS series Power MOSFET SMD
MOSFET EETMOS series Power MOSFET SMD
Produkt ist nicht verfügbar
P60B6SN-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 60A; Idm: 180A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 60A; Idm: 180A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P64LF6QL-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 64A; Idm: 192A; 168W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Pulsed drain current: 192A
Power dissipation: 168W
Gate charge: 77nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 64A
Kind of channel: enhanced
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 64A; Idm: 192A; 168W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Pulsed drain current: 192A
Power dissipation: 168W
Gate charge: 77nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 64A
Kind of channel: enhanced
Drain-source voltage: 60V
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
64+ | 1.12 EUR |
67+ | 1.07 EUR |
P64LF6QL-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 64A; Idm: 192A; 168W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Pulsed drain current: 192A
Power dissipation: 168W
Gate charge: 77nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 64A
Kind of channel: enhanced
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 64A; Idm: 192A; 168W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Pulsed drain current: 192A
Power dissipation: 168W
Gate charge: 77nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 64A
Kind of channel: enhanced
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
64+ | 1.12 EUR |
67+ | 1.07 EUR |
P64LF6QLK-5071 |
Hersteller: SHINDENGEN
P64LF6QLK-5071 SMD N channel transistors
P64LF6QLK-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P64LF6QN-5071 |
Hersteller: SHINDENGEN
P64LF6QN-5071 SMD N channel transistors
P64LF6QN-5071 SMD N channel transistors
auf Bestellung 89 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
66+ | 1.09 EUR |
89+ | 0.8 EUR |
500+ | 0.73 EUR |
P64LF6QNK-5071 |
Hersteller: SHINDENGEN
P64LF6QNK-5071 SMD N channel transistors
P64LF6QNK-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P66F7R5SN-5600 |
Hersteller: SHINDENGEN
P66F7R5SN-5600 THT N channel transistors
P66F7R5SN-5600 THT N channel transistors
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 1.79 EUR |
59+ | 1.23 EUR |
62+ | 1.16 EUR |
P66F7R5SNK-5600 |
Hersteller: SHINDENGEN
P66F7R5SNK-5600 THT N channel transistors
P66F7R5SNK-5600 THT N channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 2.03 EUR |
46+ | 1.56 EUR |
49+ | 1.47 EUR |
500+ | 1.42 EUR |
P6B28HP2-5071 |
Hersteller: SHINDENGEN
P6B28HP2-5071 SMD N channel transistors
P6B28HP2-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P6B40HP2-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 6A; Idm: 24A; 54W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 6A; Idm: 24A; 54W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
P6B40HP2-5071 |
Hersteller: Shindengen
MOSFET Hi-PotMOS series Power MOSFET SMD
MOSFET Hi-PotMOS series Power MOSFET SMD
Produkt ist nicht verfügbar
P6B40HP2-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 6A; Idm: 24A; 54W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 6A; Idm: 24A; 54W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P6B52HP2-5071 |
Hersteller: SHINDENGEN
P6B52HP2-5071 SMD N channel transistors
P6B52HP2-5071 SMD N channel transistors
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 2.65 EUR |
31+ | 2.3 EUR |
83+ | 0.86 EUR |
500+ | 0.54 EUR |
P6F50HP2-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 6A; Idm: 24A
Drain-source voltage: 500V
Drain current: 6A
Case: FTO-220AG (SC91)
Mounting: THT
Polarisation: unipolar
On-state resistance: 1.35Ω
Pulsed drain current: 24A
Power dissipation: 62.5W
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate charge: 15nC
Gate-source voltage: ±30V
Kind of package: bulk
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 6A; Idm: 24A
Drain-source voltage: 500V
Drain current: 6A
Case: FTO-220AG (SC91)
Mounting: THT
Polarisation: unipolar
On-state resistance: 1.35Ω
Pulsed drain current: 24A
Power dissipation: 62.5W
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate charge: 15nC
Gate-source voltage: ±30V
Kind of package: bulk
Type of transistor: N-MOSFET
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
71+ | 1.02 EUR |
81+ | 0.89 EUR |
90+ | 0.8 EUR |
117+ | 0.61 EUR |
122+ | 0.59 EUR |
P6F50HP2-5600 |
Hersteller: Shindengen
MOSFET High Switching Speed High Voltage
MOSFET High Switching Speed High Voltage
Produkt ist nicht verfügbar
P6F50HP2-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 6A; Idm: 24A
Drain-source voltage: 500V
Drain current: 6A
Case: FTO-220AG (SC91)
Mounting: THT
Polarisation: unipolar
On-state resistance: 1.35Ω
Pulsed drain current: 24A
Power dissipation: 62.5W
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate charge: 15nC
Gate-source voltage: ±30V
Kind of package: bulk
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 6A; Idm: 24A
Drain-source voltage: 500V
Drain current: 6A
Case: FTO-220AG (SC91)
Mounting: THT
Polarisation: unipolar
On-state resistance: 1.35Ω
Pulsed drain current: 24A
Power dissipation: 62.5W
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate charge: 15nC
Gate-source voltage: ±30V
Kind of package: bulk
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 172 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
71+ | 1.02 EUR |
81+ | 0.89 EUR |
90+ | 0.8 EUR |
117+ | 0.61 EUR |
122+ | 0.59 EUR |
P6FE25VX5K-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6A; Idm: 24A; 27W
Mounting: SMD
Case: FE (TO252AB similar)
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 24A
Power dissipation: 27W
Drain-source voltage: 250V
Drain current: 6A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6A; Idm: 24A; 27W
Mounting: SMD
Case: FE (TO252AB similar)
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 24A
Power dissipation: 27W
Drain-source voltage: 250V
Drain current: 6A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
P6FE25VX5K-5061 |
Hersteller: Shindengen
MOSFET Hi-PotMOS series Power MOSFET SMD
MOSFET Hi-PotMOS series Power MOSFET SMD
Produkt ist nicht verfügbar
P6FE25VX5K-5071 |
Hersteller: Shindengen
MOSFET Hi-PotMOS series Power MOSFET SMD
MOSFET Hi-PotMOS series Power MOSFET SMD
Produkt ist nicht verfügbar
P6FE25VX5K-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6A; Idm: 24A; 27W
Mounting: SMD
Case: FE (TO252AB similar)
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 24A
Power dissipation: 27W
Drain-source voltage: 250V
Drain current: 6A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6A; Idm: 24A; 27W
Mounting: SMD
Case: FE (TO252AB similar)
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 24A
Power dissipation: 27W
Drain-source voltage: 250V
Drain current: 6A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P70F5EN-5600 |
Hersteller: SHINDENGEN
P70F5EN-5600 THT N channel transistors
P70F5EN-5600 THT N channel transistors
auf Bestellung 99 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 2.16 EUR |
48+ | 1.52 EUR |
50+ | 1.43 EUR |
P70F7R5EN-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 75V; 70A; Idm: 280A; 53W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 53W
Case: FTO-220AG (SC91)
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: bulk
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 75V; 70A; Idm: 280A; 53W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 53W
Case: FTO-220AG (SC91)
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: bulk
Kind of channel: enhanced
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 2.16 EUR |
38+ | 1.93 EUR |
49+ | 1.47 EUR |
52+ | 1.39 EUR |
P70F7R5EN-5600 |
Hersteller: Shindengen
MOSFET 75V, 70A EETMOS POWER MOSFET
MOSFET 75V, 70A EETMOS POWER MOSFET
Produkt ist nicht verfügbar
P70F7R5EN-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 75V; 70A; Idm: 280A; 53W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 53W
Case: FTO-220AG (SC91)
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: bulk
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 75V; 70A; Idm: 280A; 53W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 53W
Case: FTO-220AG (SC91)
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: bulk
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 2.16 EUR |
38+ | 1.93 EUR |
49+ | 1.47 EUR |
52+ | 1.39 EUR |
P70FP12SN-5071 |
Hersteller: SHINDENGEN
P70FP12SN-5071 SMD N channel transistors
P70FP12SN-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P70FP12SNK-5071 |
Hersteller: SHINDENGEN
P70FP12SNK-5071 SMD N channel transistors
P70FP12SNK-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P70LF4QL-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 70A; Idm: 210A; 123W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Pulsed drain current: 210A
Power dissipation: 123W
Gate charge: 49nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 70A
Kind of channel: enhanced
Drain-source voltage: 40V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 70A; Idm: 210A; 123W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Pulsed drain current: 210A
Power dissipation: 123W
Gate charge: 49nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 70A
Kind of channel: enhanced
Drain-source voltage: 40V
Produkt ist nicht verfügbar
P70LF4QL-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 70A; Idm: 210A; 123W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Pulsed drain current: 210A
Power dissipation: 123W
Gate charge: 49nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 70A
Kind of channel: enhanced
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 70A; Idm: 210A; 123W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Pulsed drain current: 210A
Power dissipation: 123W
Gate charge: 49nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 70A
Kind of channel: enhanced
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P70LF4QLK-5071 |
Hersteller: SHINDENGEN
P70LF4QLK-5071 SMD N channel transistors
P70LF4QLK-5071 SMD N channel transistors
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
45+ | 1.59 EUR |
55+ | 1.3 EUR |
250+ | 0.82 EUR |
P70LF4QN-5071 |
Hersteller: SHINDENGEN
P70LF4QN-5071 SMD N channel transistors
P70LF4QN-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P70LF4QNK-5071 |
Hersteller: SHINDENGEN
P70LF4QNK-5071 SMD N channel transistors
P70LF4QNK-5071 SMD N channel transistors
auf Bestellung 5000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
62+ | 1.17 EUR |
90+ | 0.8 EUR |
95+ | 0.75 EUR |
P72LF7R5SL-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 1.79 EUR |
P72LF7R5SL-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 1.79 EUR |
48+ | 1.49 EUR |
P72LF7R5SLK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
P72LF7R5SLK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P72LF7R5SN-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
P72LF7R5SN-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar