Produkte > SHINDENGEN > Alle Produkte des Herstellers SHINDENGEN (3663) > Seite 42 nach 62
Foto | Bezeichnung | Hersteller | Beschreibung |
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P72LF7R5SNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 75V Drain current: 72A Pulsed drain current: 288A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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P72LF7R5SNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 75V Drain current: 72A Pulsed drain current: 288A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P7F60HP2-5600 | Shindengen | MOSFET High Switching Speed High Voltage |
Produkt ist nicht verfügbar |
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P7F60HP2-5600 | SHINDENGEN | P7F60HP2-5600 THT N channel transistors |
auf Bestellung 494 Stücke: Lieferzeit 7-14 Tag (e) |
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P7F90VX3-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 95W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 7A Pulsed drain current: 21A Power dissipation: 95W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: THT Gate charge: 42nC Kind of package: bulk Kind of channel: enhanced Application: automotive industry |
auf Bestellung 447 Stücke: Lieferzeit 14-21 Tag (e) |
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P7F90VX3-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 95W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 7A Pulsed drain current: 21A Power dissipation: 95W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: THT Gate charge: 42nC Kind of package: bulk Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 447 Stücke: Lieferzeit 7-14 Tag (e) |
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P80FG6EA-5071 | SHINDENGEN | P80FG6EA-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
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P80FG6EAL-5071 | SHINDENGEN | P80FG6EAL-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
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P80FG7R5EN-5071 | SHINDENGEN | P80FG7R5EN-5071 SMD N channel transistors |
auf Bestellung 833 Stücke: Lieferzeit 7-14 Tag (e) |
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P80FH5ENK-7071 | Shindengen | MOSFET EETMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
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P82F7R5SN-5600 | Shindengen | MOSFET EETMOS series Power MOSFET Through Hole |
Produkt ist nicht verfügbar |
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P82F7R5SN-5600 | SHINDENGEN | P82F7R5SN-5600 THT N channel transistors |
auf Bestellung 57 Stücke: Lieferzeit 7-14 Tag (e) |
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P85FG6EA-5071 | SHINDENGEN | P85FG6EA-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
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P85FG6EAL-5071 | SHINDENGEN | P85FG6EAL-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
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P85FH6EAL-7071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; FH (TO263AB) Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Case: FH (TO263AB) Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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P85FH6EAL-7071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; FH (TO263AB) Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Case: FH (TO263AB) Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P85GC28HP2F-5100 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 280V; 85A; 430W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 280V Drain current: 85A Power dissipation: 430W Case: GC (TO247AD); TO247AD Gate-source voltage: ±10V On-state resistance: 45mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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P85GC28HP2F-5100 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 280V; 85A; 430W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 280V Drain current: 85A Power dissipation: 430W Case: GC (TO247AD); TO247AD Gate-source voltage: ±10V On-state resistance: 45mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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P85W28HP2F-7071 | Shindengen | MOSFET Hi-PotMOS Power MOSFET Through Hole |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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P86F6SN-5600 | SHINDENGEN | P86F6SN-5600 THT N channel transistors |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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P88FP10SN-5071 | SHINDENGEN | P88FP10SN-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
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P88FP10SNK-5071 | SHINDENGEN | P88FP10SNK-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
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P88LF6GMK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Type of transistor: N-MOSFET Case: LF (MO235B similar) Mounting: SMD |
Produkt ist nicht verfügbar |
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P88LF6GMK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Type of transistor: N-MOSFET Case: LF (MO235B similar) Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P8B10SB-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W Case: FB (TO252AA) Kind of package: reel; tape Mounting: SMD Technology: EETMOS3 Drain-source voltage: 100V Drain current: 8A On-state resistance: 94mΩ Type of transistor: N-MOSFET Power dissipation: 20W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24A Gate charge: 16.5nC |
auf Bestellung 1857 Stücke: Lieferzeit 14-21 Tag (e) |
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P8B10SB-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W Case: FB (TO252AA) Kind of package: reel; tape Mounting: SMD Technology: EETMOS3 Drain-source voltage: 100V Drain current: 8A On-state resistance: 94mΩ Type of transistor: N-MOSFET Power dissipation: 20W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24A Gate charge: 16.5nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1857 Stücke: Lieferzeit 7-14 Tag (e) |
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P8B10SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 24A; 23W Case: FB (TO252AA) Kind of package: reel; tape Mounting: SMD Drain-source voltage: 100V Drain current: 8A On-state resistance: 94mΩ Type of transistor: N-MOSFET Power dissipation: 23W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 24A Gate charge: 16.5nC |
Produkt ist nicht verfügbar |
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P8B10SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 24A; 23W Case: FB (TO252AA) Kind of package: reel; tape Mounting: SMD Drain-source voltage: 100V Drain current: 8A On-state resistance: 94mΩ Type of transistor: N-MOSFET Power dissipation: 23W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 24A Gate charge: 16.5nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P8B28HP2-5071 | SHINDENGEN | P8B28HP2-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
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P8B30HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 300V; 8A; Idm: 32A; 54W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 300V Drain current: 8A Pulsed drain current: 32A Power dissipation: 54W Case: FB (TO252AA) Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 9.8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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P8B30HP2-5071 | Shindengen | MOSFET Hi-PotMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
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P8B30HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 300V; 8A; Idm: 32A; 54W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 300V Drain current: 8A Pulsed drain current: 32A Power dissipation: 54W Case: FB (TO252AA) Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 9.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P8F28HP2-5600 | Shindengen | MOSFET 280V, 8A EETMOS POWER MOSFET |
Produkt ist nicht verfügbar |
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P8F28HP2-5600 | SHINDENGEN | P8F28HP2-5600 THT N channel transistors |
auf Bestellung 97 Stücke: Lieferzeit 7-14 Tag (e) |
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P8F50HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 8A; Idm: 32A; 65W Type of transistor: N-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: bulk Gate charge: 15nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 32A Mounting: THT Case: FTO-220AG (SC91) Drain-source voltage: 500V Drain current: 8A On-state resistance: 1Ω |
auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
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P8F50HP2-5600 | Shindengen | MOSFET Mosfet |
Produkt ist nicht verfügbar |
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P8F50HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 8A; Idm: 32A; 65W Type of transistor: N-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: bulk Gate charge: 15nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 32A Mounting: THT Case: FTO-220AG (SC91) Drain-source voltage: 500V Drain current: 8A On-state resistance: 1Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 137 Stücke: Lieferzeit 7-14 Tag (e) |
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P8FE10SB-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; FE (TO252AB similar) Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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P8FE10SB-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; FE (TO252AB similar) Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P8FE10SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 24W Kind of package: reel; tape Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Gate charge: 16.5nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24A Drain current: 8A On-state resistance: 99mΩ Type of transistor: N-MOSFET Drain-source voltage: 100V Application: automotive industry Power dissipation: 24W |
Produkt ist nicht verfügbar |
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P8FE10SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 24W Kind of package: reel; tape Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Gate charge: 16.5nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24A Drain current: 8A On-state resistance: 99mΩ Type of transistor: N-MOSFET Drain-source voltage: 100V Application: automotive industry Power dissipation: 24W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P90FG5R5SL-5071 | Shindengen | MOSFET 55V, 90A EETMOS POWER MOSFET |
Produkt ist nicht verfügbar |
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P90FG5R5SL-5071 | SHINDENGEN | P90FG5R5SL-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
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P90LF6GLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Type of transistor: N-MOSFET Case: LF (MO235B similar) Mounting: SMD |
Produkt ist nicht verfügbar |
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P90LF6GLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Type of transistor: N-MOSFET Case: LF (MO235B similar) Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P94FG5R5SL-5071 | SHINDENGEN | P94FG5R5SL-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
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P98LF6QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 60V Drain current: 98A Pulsed drain current: 392A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 126nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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P98LF6QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 60V Drain current: 98A Pulsed drain current: 392A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 126nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P98LF6QLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 60V Drain current: 98A Pulsed drain current: 392A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 126nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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P98LF6QLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 60V Drain current: 98A Pulsed drain current: 392A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 126nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P98LF6QN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 60V Drain current: 98A Pulsed drain current: 392A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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P98LF6QN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 60V Drain current: 98A Pulsed drain current: 392A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P98LF6QNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 60V Drain current: 98A Pulsed drain current: 392A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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P98LF6QNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 60V Drain current: 98A Pulsed drain current: 392A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P9B30HP2F-5071 | SHINDENGEN | P9B30HP2F-5071 SMD N channel transistors |
Produkt ist nicht verfügbar |
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P9B40HP2 | Shindengen | MOSFET Mosfet |
Produkt ist nicht verfügbar |
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P9B40HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 9A; Idm: 36A; 40W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 400V Drain current: 9A Pulsed drain current: 36A Power dissipation: 40W Case: FB (TO252AA) Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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P9B40HP2-5071 | Shindengen | MOSFET Hi Voltage Low Noise |
Produkt ist nicht verfügbar |
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P9B40HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 9A; Idm: 36A; 40W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 400V Drain current: 9A Pulsed drain current: 36A Power dissipation: 40W Case: FB (TO252AA) Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PB508AC | SHINDENGEN | 07+; |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
P72LF7R5SNK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
P72LF7R5SNK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P7F60HP2-5600 |
Hersteller: Shindengen
MOSFET High Switching Speed High Voltage
MOSFET High Switching Speed High Voltage
Produkt ist nicht verfügbar
P7F60HP2-5600 |
Hersteller: SHINDENGEN
P7F60HP2-5600 THT N channel transistors
P7F60HP2-5600 THT N channel transistors
auf Bestellung 494 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
60+ | 1.2 EUR |
81+ | 0.89 EUR |
87+ | 0.83 EUR |
P7F90VX3-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 42nC
Kind of package: bulk
Kind of channel: enhanced
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 42nC
Kind of package: bulk
Kind of channel: enhanced
Application: automotive industry
auf Bestellung 447 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 2.07 EUR |
39+ | 1.86 EUR |
48+ | 1.52 EUR |
50+ | 1.43 EUR |
P7F90VX3-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 42nC
Kind of package: bulk
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 42nC
Kind of package: bulk
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 447 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 2.07 EUR |
39+ | 1.86 EUR |
48+ | 1.52 EUR |
50+ | 1.43 EUR |
P80FG6EA-5071 |
Hersteller: SHINDENGEN
P80FG6EA-5071 SMD N channel transistors
P80FG6EA-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P80FG6EAL-5071 |
Hersteller: SHINDENGEN
P80FG6EAL-5071 SMD N channel transistors
P80FG6EAL-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P80FG7R5EN-5071 |
Hersteller: SHINDENGEN
P80FG7R5EN-5071 SMD N channel transistors
P80FG7R5EN-5071 SMD N channel transistors
auf Bestellung 833 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 1.83 EUR |
58+ | 1.24 EUR |
61+ | 1.17 EUR |
P80FH5ENK-7071 |
Hersteller: Shindengen
MOSFET EETMOS series Power MOSFET SMD
MOSFET EETMOS series Power MOSFET SMD
Produkt ist nicht verfügbar
P82F7R5SN-5600 |
Hersteller: Shindengen
MOSFET EETMOS series Power MOSFET Through Hole
MOSFET EETMOS series Power MOSFET Through Hole
Produkt ist nicht verfügbar
P82F7R5SN-5600 |
Hersteller: SHINDENGEN
P82F7R5SN-5600 THT N channel transistors
P82F7R5SN-5600 THT N channel transistors
auf Bestellung 57 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 2.63 EUR |
41+ | 1.77 EUR |
43+ | 1.69 EUR |
P85FG6EA-5071 |
Hersteller: SHINDENGEN
P85FG6EA-5071 SMD N channel transistors
P85FG6EA-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P85FG6EAL-5071 |
Hersteller: SHINDENGEN
P85FG6EAL-5071 SMD N channel transistors
P85FG6EAL-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P85FH6EAL-7071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; FH (TO263AB)
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Case: FH (TO263AB)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; FH (TO263AB)
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Case: FH (TO263AB)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
P85FH6EAL-7071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; FH (TO263AB)
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Case: FH (TO263AB)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; FH (TO263AB)
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Case: FH (TO263AB)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P85GC28HP2F-5100 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 280V; 85A; 430W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 280V
Drain current: 85A
Power dissipation: 430W
Case: GC (TO247AD); TO247AD
Gate-source voltage: ±10V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 280V; 85A; 430W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 280V
Drain current: 85A
Power dissipation: 430W
Case: GC (TO247AD); TO247AD
Gate-source voltage: ±10V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 5.68 EUR |
18+ | 4.06 EUR |
19+ | 3.85 EUR |
P85GC28HP2F-5100 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 280V; 85A; 430W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 280V
Drain current: 85A
Power dissipation: 430W
Case: GC (TO247AD); TO247AD
Gate-source voltage: ±10V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 280V; 85A; 430W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 280V
Drain current: 85A
Power dissipation: 430W
Case: GC (TO247AD); TO247AD
Gate-source voltage: ±10V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 5.68 EUR |
18+ | 4.06 EUR |
19+ | 3.85 EUR |
P85W28HP2F-7071 |
Hersteller: Shindengen
MOSFET Hi-PotMOS Power MOSFET Through Hole
MOSFET Hi-PotMOS Power MOSFET Through Hole
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)P86F6SN-5600 |
Hersteller: SHINDENGEN
P86F6SN-5600 THT N channel transistors
P86F6SN-5600 THT N channel transistors
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 2.63 EUR |
41+ | 1.77 EUR |
43+ | 1.69 EUR |
P88FP10SN-5071 |
Hersteller: SHINDENGEN
P88FP10SN-5071 SMD N channel transistors
P88FP10SN-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P88FP10SNK-5071 |
Hersteller: SHINDENGEN
P88FP10SNK-5071 SMD N channel transistors
P88FP10SNK-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P88LF6GMK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
Produkt ist nicht verfügbar
P88LF6GMK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P8B10SB-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Drain-source voltage: 100V
Drain current: 8A
On-state resistance: 94mΩ
Type of transistor: N-MOSFET
Power dissipation: 20W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Gate charge: 16.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Drain-source voltage: 100V
Drain current: 8A
On-state resistance: 94mΩ
Type of transistor: N-MOSFET
Power dissipation: 20W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Gate charge: 16.5nC
auf Bestellung 1857 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
163+ | 0.44 EUR |
180+ | 0.4 EUR |
226+ | 0.32 EUR |
239+ | 0.3 EUR |
P8B10SB-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Drain-source voltage: 100V
Drain current: 8A
On-state resistance: 94mΩ
Type of transistor: N-MOSFET
Power dissipation: 20W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Gate charge: 16.5nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Drain-source voltage: 100V
Drain current: 8A
On-state resistance: 94mΩ
Type of transistor: N-MOSFET
Power dissipation: 20W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Gate charge: 16.5nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1857 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
163+ | 0.44 EUR |
180+ | 0.4 EUR |
226+ | 0.32 EUR |
239+ | 0.3 EUR |
3000+ | 0.29 EUR |
P8B10SBK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 24A; 23W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 100V
Drain current: 8A
On-state resistance: 94mΩ
Type of transistor: N-MOSFET
Power dissipation: 23W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 24A
Gate charge: 16.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 24A; 23W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 100V
Drain current: 8A
On-state resistance: 94mΩ
Type of transistor: N-MOSFET
Power dissipation: 23W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 24A
Gate charge: 16.5nC
Produkt ist nicht verfügbar
P8B10SBK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 24A; 23W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 100V
Drain current: 8A
On-state resistance: 94mΩ
Type of transistor: N-MOSFET
Power dissipation: 23W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 24A
Gate charge: 16.5nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 24A; 23W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 100V
Drain current: 8A
On-state resistance: 94mΩ
Type of transistor: N-MOSFET
Power dissipation: 23W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 24A
Gate charge: 16.5nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P8B28HP2-5071 |
Hersteller: SHINDENGEN
P8B28HP2-5071 SMD N channel transistors
P8B28HP2-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P8B30HP2-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 300V; 8A; Idm: 32A; 54W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 300V; 8A; Idm: 32A; 54W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
P8B30HP2-5071 |
Hersteller: Shindengen
MOSFET Hi-PotMOS series Power MOSFET SMD
MOSFET Hi-PotMOS series Power MOSFET SMD
Produkt ist nicht verfügbar
P8B30HP2-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 300V; 8A; Idm: 32A; 54W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 300V; 8A; Idm: 32A; 54W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P8F28HP2-5600 |
Hersteller: SHINDENGEN
P8F28HP2-5600 THT N channel transistors
P8F28HP2-5600 THT N channel transistors
auf Bestellung 97 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
67+ | 1.08 EUR |
95+ | 0.76 EUR |
97+ | 0.74 EUR |
P8F50HP2-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 8A; Idm: 32A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 500V
Drain current: 8A
On-state resistance: 1Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 8A; Idm: 32A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 500V
Drain current: 8A
On-state resistance: 1Ω
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
71+ | 1.02 EUR |
88+ | 0.82 EUR |
97+ | 0.74 EUR |
122+ | 0.59 EUR |
129+ | 0.56 EUR |
P8F50HP2-5600 |
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 8A; Idm: 32A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 500V
Drain current: 8A
On-state resistance: 1Ω
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 8A; Idm: 32A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 500V
Drain current: 8A
On-state resistance: 1Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 137 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
71+ | 1.02 EUR |
88+ | 0.82 EUR |
97+ | 0.74 EUR |
122+ | 0.59 EUR |
129+ | 0.56 EUR |
P8FE10SB-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FE (TO252AB similar)
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FE (TO252AB similar)
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
P8FE10SB-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FE (TO252AB similar)
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FE (TO252AB similar)
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P8FE10SBK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.5nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Drain current: 8A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Application: automotive industry
Power dissipation: 24W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.5nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Drain current: 8A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Application: automotive industry
Power dissipation: 24W
Produkt ist nicht verfügbar
P8FE10SBK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.5nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Drain current: 8A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Application: automotive industry
Power dissipation: 24W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.5nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Drain current: 8A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Application: automotive industry
Power dissipation: 24W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P90FG5R5SL-5071 |
Hersteller: Shindengen
MOSFET 55V, 90A EETMOS POWER MOSFET
MOSFET 55V, 90A EETMOS POWER MOSFET
Produkt ist nicht verfügbar
P90FG5R5SL-5071 |
Hersteller: SHINDENGEN
P90FG5R5SL-5071 SMD N channel transistors
P90FG5R5SL-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P90LF6GLK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
Produkt ist nicht verfügbar
P90LF6GLK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P94FG5R5SL-5071 |
Hersteller: SHINDENGEN
P94FG5R5SL-5071 SMD N channel transistors
P94FG5R5SL-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P98LF6QL-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
P98LF6QL-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P98LF6QLK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
P98LF6QLK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P98LF6QN-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
P98LF6QN-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P98LF6QNK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
P98LF6QNK-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P9B30HP2F-5071 |
Hersteller: SHINDENGEN
P9B30HP2F-5071 SMD N channel transistors
P9B30HP2F-5071 SMD N channel transistors
Produkt ist nicht verfügbar
P9B40HP2-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 9A; Idm: 36A; 40W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 40W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 9A; Idm: 36A; 40W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 40W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
P9B40HP2-5071 |
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 9A; Idm: 36A; 40W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 40W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 9A; Idm: 36A; 40W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 40W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar