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MJ2955 MJ2955 STMicroelectronics 2N3055%2C%20MJ2955.pdf 5272_MJ2955.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 15A; 150W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Case: TO3
Mounting: THT
Power: 150W
Produkt ist nicht verfügbar
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STM32U5F9NJH6Q STMicroelectronics stm32u5f7vj.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 160MHz; TFBGA216; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 160MHz
Mounting: SMD
Number of inputs/outputs: 156
Case: TFBGA216
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; DSI; I2C x6; LPUART; MIPI; PSSI; SAI x 2; SDMMC; SPI x3; UART x2; USART x4; USB
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; LCD controller; MPU; PVD; PWM; RTC; TRNG; watchdog
Memory: 3MB SRAM; 4MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 11
Number of 32bit timers: 4
Family: STM32U5
Kind of package: in-tray
Kind of core: 32-bit
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STM32U5F9VJT6Q STMicroelectronics stm32u5f7vj.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 160MHz; LQFP100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 160MHz
Mounting: SMD
Number of inputs/outputs: 63
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; DSI; I2C x6; LPUART; MIPI; PSSI; SAI x 2; SDMMC; SPI x3; UART x2; USART x4; USB
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; LCD controller; MPU; PVD; PWM; RTC; TRNG; watchdog
Memory: 3MB SRAM; 4MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 17
Number of 12bit D/A converters: 2
Number of 16bit timers: 11
Number of 32bit timers: 4
Family: STM32U5
Kind of package: in-tray
Kind of core: 32-bit
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STM32U5F9ZJJ6Q STMicroelectronics stm32u5f7vj.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 160MHz; UFBGA144; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 160MHz
Mounting: SMD
Number of inputs/outputs: 101
Case: UFBGA144
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; DSI; I2C x6; LPUART; MIPI; PSSI; SAI x 2; SDMMC; SPI x3; UART x2; USART x4; USB
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; LCD controller; MPU; PVD; PWM; RTC; TRNG; watchdog
Memory: 3MB SRAM; 4MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 22
Number of 12bit D/A converters: 2
Number of 16bit timers: 11
Number of 32bit timers: 4
Family: STM32U5
Kind of package: in-tray
Kind of core: 32-bit
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LM833N LM833N STMicroelectronics lm833.pdf Category: THT operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; DIP8; Ch: dual
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: dual; 2
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Slew rate: 7V/μs
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STM32F100RBT6B STM32F100RBT6B STMicroelectronics STM32F100C4T6B-DTE.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 24MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 24MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: I2C; IrDA; LIN; SPI; USART
Kind of architecture: Cortex M3
Memory: 8kB SRAM; 128kB FLASH
Family: STM32F1
Kind of core: 32-bit
Number of 12bit D/A converters: 2
Operating temperature: -40...85°C
Integrated circuit features: DMA; internal temperature sensor; PoR; PWM
Number of 12bit A/D converters: 16
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16+5.45 EUR
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STM32F100RBT6BTR STM32F100RBT6BTR STMicroelectronics CD00251732.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 24MHz; LQFP64; 2÷3.6VDC; STM32F1
Interface: I2C x2; SPI x2; USART x3
Kind of architecture: Cortex M3
Supply voltage: 2...3.6V DC
Number of 16bit timers: 6
Number of inputs/outputs: 51
Memory: 8kB SRAM; 128kB FLASH
Kind of core: 32-bit
Clock frequency: 24MHz
Case: LQFP64
Mounting: SMD
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F1
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LM334DT LM334DT STMicroelectronics lm334.pdf Category: Integrated circuits - others
Description: IC: current source; SO8; 0÷70°C; reel,tape; 1÷40V; ±3%
Type of integrated circuit: current source
Operating voltage: 1...40V
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: reel; tape
Tolerance: ±3%
Output current: 10mA
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80+1.07 EUR
87+0.99 EUR
92+0.93 EUR
100+0.88 EUR
250+0.82 EUR
500+0.79 EUR
1000+0.75 EUR
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STMT/8L-EV1 STMicroelectronics stmt-slsh-8l-ev1.pdf Category: STM development kits
Description: Dev.kit: STM8; Comp: STM8L151C6; Architecture: Harvard 8bit
Interface: I2C; SPI; UART
Kit contents: LCD 2x16 characters
Connection: USB
Kind of architecture: Harvard 8bit
Type of development kit: STM8
Components: STM8L151C6
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M4T32-BR12SH1 M4T32-BR12SH1 STMicroelectronics m4t28-br12sh.pdf M4T32-BR12SH1.pdf Category: RTC circuits
Description: Accessories: battery; parallel; SNAPHAT; 2.8V; for M48 memories
Type of accessories for semiconductors: battery
Interface: parallel
Mounting: THT
Case: SNAPHAT
Operating voltage: 2.8V
Frequency: 32.768kHz
Application: for M48 memories
Battery/ rechargeable battery: battery Li(CF) BR1632 2,8V x1
Capacity: 120mAh
Trade name: TIMEKEEPER®
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SM6T12CA SM6T12CA STMicroelectronics SM6T150CA.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 12V; 36A; bidirectional; ±5%; SMB; reel,tape
Max. off-state voltage: 10.2V
Max. forward impulse current: 36A
Case: SMB
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Leakage current: 1µA
Tolerance: ±5%
Breakdown voltage: 12V
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
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226+0.38 EUR
285+0.3 EUR
311+0.27 EUR
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2500+0.18 EUR
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SM4T12CAY SM4T12CAY STMicroelectronics SM4T35CAY.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 11.7V; 23.5A; bidirectional; SMA; reel,tape
Max. off-state voltage: 10V
Max. forward impulse current: 23.5A
Case: SMA
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Leakage current: 1µA
Breakdown voltage: 11.7V
Peak pulse power dissipation: 0.4kW
Application: automotive industry
Semiconductor structure: bidirectional
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190+0.45 EUR
205+0.42 EUR
256+0.33 EUR
274+0.31 EUR
500+0.3 EUR
1000+0.29 EUR
2000+0.27 EUR
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STPS3150U STPS3150U STMicroelectronics STPS3150U.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 3A; reel,tape
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Load current: 3A
Max. off-state voltage: 150V
Max. forward impulse current: 80A
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120+0.71 EUR
171+0.5 EUR
196+0.44 EUR
298+0.29 EUR
348+0.25 EUR
500+0.23 EUR
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STPS3150RL STPS3150RL STMicroelectronics stps3150.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 3A; DO201AD; Ufmax: 0.82V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 100A
Kind of package: reel
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STPS3150AFN STMicroelectronics stps3150.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 150V; 3A; reel,tape
Mounting: SMD
Case: SMA flat
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 2mA
Max. forward voltage: 0.89V
Load current: 3A
Max. off-state voltage: 150V
Max. forward impulse current: 75A
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STPS3150UY STMicroelectronics stps3150-y.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
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STD5NM60-1 STD5NM60-1 STMicroelectronics std5nm60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; Idm: 20A; 96W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.1A
Power dissipation: 96W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18nC
Pulsed drain current: 20A
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STP26NM60N STP26NM60N STMicroelectronics stp26nm60n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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14+6.52 EUR
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50+5.18 EUR
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STW26NM60N STW26NM60N STMicroelectronics STW26NM60N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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10+9.29 EUR
15+5.9 EUR
30+4 EUR
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STP11NM60FD STP11NM60FD STMicroelectronics STP11NM60FD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 7A; 160W; TO220-3
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STP22NM60N STP22NM60N STMicroelectronics en.CD00237949.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 16A; Idm: 64A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 44nC
Pulsed drain current: 64A
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STF18NM60N STF18NM60N STMicroelectronics STF18NM60N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; 30W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STF10NM60N STF10NM60N STMicroelectronics std10nm60n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19nC
Pulsed drain current: 32A
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18+4.8 EUR
25+3.47 EUR
31+2.8 EUR
41+2.09 EUR
50+1.78 EUR
100+1.63 EUR
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STW48NM60N STW48NM60N STMicroelectronics STW48NM60N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STD10NM60N STD10NM60N STMicroelectronics STD10NM60N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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37+2.31 EUR
100+1.9 EUR
500+1.78 EUR
1000+1.69 EUR
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STF22NM60N STF22NM60N STMicroelectronics STF22NM60N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STP11NM60 STP11NM60 STMicroelectronics STP11NM60_STB11NM60T4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 44A
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STW34NM60N STW34NM60N STMicroelectronics STW34NM60N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STP11NM60ND STP11NM60ND STMicroelectronics STD11NM60ND.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 6.3A; 90W
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STU10NM60N STU10NM60N STMicroelectronics STD10NM60N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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46+1.87 EUR
53+1.62 EUR
75+1.46 EUR
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STW18NM60N STW18NM60N STMicroelectronics stw18nm60n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 52A
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STP18NM60N STP18NM60N STMicroelectronics en.CD00238184.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; Idm: 52A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Pulsed drain current: 52A
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STP24NM60N STP24NM60N STMicroelectronics stp24nm60n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 44nC
Pulsed drain current: 68A
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STP34NM60N STP34NM60N STMicroelectronics STW34NM60N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.105Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STF34NM60ND STF34NM60ND STMicroelectronics STx34NM60ND_DS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; Idm: 116A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 116A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: FDmesh™ II
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STF24NM60N STF24NM60N STMicroelectronics STF24NM60N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 11A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STW34NM60ND STW34NM60ND STMicroelectronics STx34NM60ND-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STL3NM60N STMicroelectronics en.DM00048286.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 2.6A; 22W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 22W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±25V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 9.5nC
Pulsed drain current: 2.6A
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STU7NM60N STMicroelectronics en.CD00252114.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 45W; IPAK,TO251
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 45W
Case: IPAK; TO251
On-state resistance: 0.9Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 14nC
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STD3NM60N STMicroelectronics en.DM00052307.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.3A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.3A
Power dissipation: 50W
Case: DPAK
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 9.5nC
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STD5NM60T4 STD5NM60T4 STMicroelectronics std5nm60.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.1A; 96W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.1A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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STD9NM60N STMicroelectronics en.CD00286931.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; Idm: 26A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 745mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17.4nC
Pulsed drain current: 26A
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STP9NM60N STMicroelectronics en.CD00286931.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; 70W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: TO220-3
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 17.4nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STGP20NC60V STGP20NC60V STMicroelectronics en.CD00003669.pdf description Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO220AB
Type of transistor: IGBT
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Collector-emitter voltage: 600V
Gate charge: 0.1µC
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SMAJ85CA-TR SMAJ85CA-TR STMicroelectronics SMAJxxX_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 99V; 13A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 99V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ154A-TR SMAJ154A-TR STMicroelectronics SMAJxxX_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 171V; 7A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 154V
Breakdown voltage: 171V
Max. forward impulse current: 7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Leakage current: 1µA
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SMAJ30CA-TR SMAJ30CA-TR STMicroelectronics SMAJxxX_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3V; 36A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMBJ6.5CA-TR SMBJ6.5CA-TR STMicroelectronics SMBJ6.5CA.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape
Manufacturer series: SMBJ
Mounting: SMD
Type of diode: TVS
Leakage current: 50µA
Max. off-state voltage: 6.5V
Breakdown voltage: 7.2...7.58V
Max. forward impulse current: 266A
Kind of package: reel; tape
Peak pulse power dissipation: 0.6kW
Case: SMB
Semiconductor structure: bidirectional
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SMBJ6.5CA-TR SMBJ6.5CA-TR STMicroelectronics cd00001366.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape
Manufacturer series: SMBJ
Mounting: SMD
Type of diode: TVS
Leakage current: 50µA
Max. off-state voltage: 6.5V
Breakdown voltage: 7.2...7.58V
Max. forward impulse current: 266A
Kind of package: reel; tape
Peak pulse power dissipation: 0.6kW
Case: SMB
Semiconductor structure: bidirectional
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STM8S103F2M6 STM8S103F2M6 STMicroelectronics STM8S103F2-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F2M6TR STM8S103F2M6TR STMicroelectronics STM8S103F2-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F2P3TR STM8S103F2P3TR STMicroelectronics STM8S103F2-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F2P6TR STM8S103F2P6TR STMicroelectronics STM8S103F2-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F3M6TR STM8S103F3M6TR STMicroelectronics STM8S103F2-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F3P3 STMicroelectronics en.CD00226640.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F3P3TR STM8S103F3P3TR STMicroelectronics STM8S103F2-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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BTB24-800CWRG BTB24-800CWRG STMicroelectronics btb24.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35mA
Mounting: THT
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STM32F205RGT6 STM32F205RGT6 STMicroelectronics STM32F205VCT6.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; I2C; IrDA; LIN; MMC; SPI; USART; USB OTG
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); DMA; LCD controller; PoR; PWM
Memory: 132kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
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STM32F205RGT6TR STMicroelectronics stm32f205rb.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
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STM32F205RGT6V STMicroelectronics stm32f205rb.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
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MJ2955 2N3055%2C%20MJ2955.pdf 5272_MJ2955.pdf
MJ2955
Hersteller: STMicroelectronics
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 15A; 150W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Case: TO3
Mounting: THT
Power: 150W
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STM32U5F9NJH6Q stm32u5f7vj.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 160MHz; TFBGA216; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 160MHz
Mounting: SMD
Number of inputs/outputs: 156
Case: TFBGA216
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; DSI; I2C x6; LPUART; MIPI; PSSI; SAI x 2; SDMMC; SPI x3; UART x2; USART x4; USB
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; LCD controller; MPU; PVD; PWM; RTC; TRNG; watchdog
Memory: 3MB SRAM; 4MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 11
Number of 32bit timers: 4
Family: STM32U5
Kind of package: in-tray
Kind of core: 32-bit
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STM32U5F9VJT6Q stm32u5f7vj.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 160MHz; LQFP100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 160MHz
Mounting: SMD
Number of inputs/outputs: 63
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; DSI; I2C x6; LPUART; MIPI; PSSI; SAI x 2; SDMMC; SPI x3; UART x2; USART x4; USB
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; LCD controller; MPU; PVD; PWM; RTC; TRNG; watchdog
Memory: 3MB SRAM; 4MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 17
Number of 12bit D/A converters: 2
Number of 16bit timers: 11
Number of 32bit timers: 4
Family: STM32U5
Kind of package: in-tray
Kind of core: 32-bit
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STM32U5F9ZJJ6Q stm32u5f7vj.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 160MHz; UFBGA144; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 160MHz
Mounting: SMD
Number of inputs/outputs: 101
Case: UFBGA144
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; DSI; I2C x6; LPUART; MIPI; PSSI; SAI x 2; SDMMC; SPI x3; UART x2; USART x4; USB
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; LCD controller; MPU; PVD; PWM; RTC; TRNG; watchdog
Memory: 3MB SRAM; 4MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 22
Number of 12bit D/A converters: 2
Number of 16bit timers: 11
Number of 32bit timers: 4
Family: STM32U5
Kind of package: in-tray
Kind of core: 32-bit
Produkt ist nicht verfügbar
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LM833N lm833.pdf
LM833N
Hersteller: STMicroelectronics
Category: THT operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; DIP8; Ch: dual
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: dual; 2
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Slew rate: 7V/μs
Produkt ist nicht verfügbar
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STM32F100RBT6B STM32F100C4T6B-DTE.pdf
STM32F100RBT6B
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 24MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 24MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: I2C; IrDA; LIN; SPI; USART
Kind of architecture: Cortex M3
Memory: 8kB SRAM; 128kB FLASH
Family: STM32F1
Kind of core: 32-bit
Number of 12bit D/A converters: 2
Operating temperature: -40...85°C
Integrated circuit features: DMA; internal temperature sensor; PoR; PWM
Number of 12bit A/D converters: 16
auf Bestellung 254 Stücke:
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STM32F100RBT6BTR CD00251732.pdf
STM32F100RBT6BTR
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 24MHz; LQFP64; 2÷3.6VDC; STM32F1
Interface: I2C x2; SPI x2; USART x3
Kind of architecture: Cortex M3
Supply voltage: 2...3.6V DC
Number of 16bit timers: 6
Number of inputs/outputs: 51
Memory: 8kB SRAM; 128kB FLASH
Kind of core: 32-bit
Clock frequency: 24MHz
Case: LQFP64
Mounting: SMD
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F1
Produkt ist nicht verfügbar
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LM334DT lm334.pdf
LM334DT
Hersteller: STMicroelectronics
Category: Integrated circuits - others
Description: IC: current source; SO8; 0÷70°C; reel,tape; 1÷40V; ±3%
Type of integrated circuit: current source
Operating voltage: 1...40V
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: reel; tape
Tolerance: ±3%
Output current: 10mA
auf Bestellung 1522 Stücke:
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59+1.46 EUR
80+1.07 EUR
87+0.99 EUR
92+0.93 EUR
100+0.88 EUR
250+0.82 EUR
500+0.79 EUR
1000+0.75 EUR
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STMT/8L-EV1 stmt-slsh-8l-ev1.pdf
Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM8; Comp: STM8L151C6; Architecture: Harvard 8bit
Interface: I2C; SPI; UART
Kit contents: LCD 2x16 characters
Connection: USB
Kind of architecture: Harvard 8bit
Type of development kit: STM8
Components: STM8L151C6
Produkt ist nicht verfügbar
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M4T32-BR12SH1 m4t28-br12sh.pdf M4T32-BR12SH1.pdf
M4T32-BR12SH1
Hersteller: STMicroelectronics
Category: RTC circuits
Description: Accessories: battery; parallel; SNAPHAT; 2.8V; for M48 memories
Type of accessories for semiconductors: battery
Interface: parallel
Mounting: THT
Case: SNAPHAT
Operating voltage: 2.8V
Frequency: 32.768kHz
Application: for M48 memories
Battery/ rechargeable battery: battery Li(CF) BR1632 2,8V x1
Capacity: 120mAh
Trade name: TIMEKEEPER®
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6+14.28 EUR
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SM6T12CA SM6T150CA.pdf
SM6T12CA
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 12V; 36A; bidirectional; ±5%; SMB; reel,tape
Max. off-state voltage: 10.2V
Max. forward impulse current: 36A
Case: SMB
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Leakage current: 1µA
Tolerance: ±5%
Breakdown voltage: 12V
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
auf Bestellung 6594 Stücke:
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107+0.8 EUR
226+0.38 EUR
285+0.3 EUR
311+0.27 EUR
500+0.23 EUR
1000+0.2 EUR
2500+0.18 EUR
5000+0.17 EUR
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SM4T12CAY SM4T35CAY.pdf
SM4T12CAY
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 11.7V; 23.5A; bidirectional; SMA; reel,tape
Max. off-state voltage: 10V
Max. forward impulse current: 23.5A
Case: SMA
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Leakage current: 1µA
Breakdown voltage: 11.7V
Peak pulse power dissipation: 0.4kW
Application: automotive industry
Semiconductor structure: bidirectional
auf Bestellung 3700 Stücke:
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AnzahlPrivatkunde
95+0.9 EUR
190+0.45 EUR
205+0.42 EUR
256+0.33 EUR
274+0.31 EUR
500+0.3 EUR
1000+0.29 EUR
2000+0.27 EUR
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STPS3150U STPS3150U.pdf
STPS3150U
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 3A; reel,tape
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Load current: 3A
Max. off-state voltage: 150V
Max. forward impulse current: 80A
auf Bestellung 6449 Stücke:
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120+0.71 EUR
171+0.5 EUR
196+0.44 EUR
298+0.29 EUR
348+0.25 EUR
500+0.23 EUR
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STPS3150RL stps3150.pdf
STPS3150RL
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 3A; DO201AD; Ufmax: 0.82V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 100A
Kind of package: reel
auf Bestellung 1441 Stücke:
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250+0.35 EUR
650+0.18 EUR
Mindestbestellmenge: 250 Stücke
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STPS3150AFN stps3150.pdf
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 150V; 3A; reel,tape
Mounting: SMD
Case: SMA flat
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 2mA
Max. forward voltage: 0.89V
Load current: 3A
Max. off-state voltage: 150V
Max. forward impulse current: 75A
Produkt ist nicht verfügbar
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STPS3150UY stps3150-y.pdf
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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STD5NM60-1 std5nm60.pdf
STD5NM60-1
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; Idm: 20A; 96W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.1A
Power dissipation: 96W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18nC
Pulsed drain current: 20A
Produkt ist nicht verfügbar
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STP26NM60N stp26nm60n.pdf
STP26NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 176 Stücke:
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11+8.47 EUR
14+6.52 EUR
25+5.74 EUR
50+5.18 EUR
100+4.56 EUR
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STW26NM60N STW26NM60N-DTE.pdf
STW26NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 188 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+9.29 EUR
15+5.9 EUR
30+4 EUR
60+3.4 EUR
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STP11NM60FD STP11NM60FD.pdf
STP11NM60FD
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 7A; 160W; TO220-3
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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STP22NM60N en.CD00237949.pdf
STP22NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 16A; Idm: 64A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 44nC
Pulsed drain current: 64A
Produkt ist nicht verfügbar
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STF18NM60N STF18NM60N.pdf
STF18NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; 30W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STF10NM60N std10nm60n.pdf
STF10NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19nC
Pulsed drain current: 32A
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)
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18+4.8 EUR
25+3.47 EUR
31+2.8 EUR
41+2.09 EUR
50+1.78 EUR
100+1.63 EUR
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STW48NM60N STW48NM60N-DTE.pdf
STW48NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STD10NM60N STD10NM60N.pdf
STD10NM60N
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2035 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
25+3.45 EUR
37+2.31 EUR
100+1.9 EUR
500+1.78 EUR
1000+1.69 EUR
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STF22NM60N STF22NM60N.pdf
STF22NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STP11NM60 STP11NM60_STB11NM60T4.pdf
STP11NM60
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 44A
Produkt ist nicht verfügbar
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STW34NM60N STW34NM60N-DTE.pdf
STW34NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STP11NM60ND STD11NM60ND.pdf
STP11NM60ND
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 6.3A; 90W
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STU10NM60N STD10NM60N.pdf
STU10NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
42+2.06 EUR
46+1.87 EUR
53+1.62 EUR
75+1.46 EUR
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STW18NM60N stw18nm60n.pdf
STW18NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 52A
Produkt ist nicht verfügbar
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STP18NM60N en.CD00238184.pdf
STP18NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; Idm: 52A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Pulsed drain current: 52A
Produkt ist nicht verfügbar
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STP24NM60N stp24nm60n.pdf
STP24NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 44nC
Pulsed drain current: 68A
Produkt ist nicht verfügbar
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STP34NM60N STW34NM60N-DTE.pdf
STP34NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.105Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STF34NM60ND STx34NM60ND_DS.pdf
STF34NM60ND
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; Idm: 116A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 116A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: FDmesh™ II
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
16+5.63 EUR
17+5.31 EUR
18+4.83 EUR
25+4.47 EUR
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STF24NM60N STF24NM60N.pdf
STF24NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 11A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STW34NM60ND STx34NM60ND-DTE.pdf
STW34NM60ND
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STL3NM60N en.DM00048286.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 2.6A; 22W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 22W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±25V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 9.5nC
Pulsed drain current: 2.6A
Produkt ist nicht verfügbar
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STU7NM60N en.CD00252114.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 45W; IPAK,TO251
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 45W
Case: IPAK; TO251
On-state resistance: 0.9Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 14nC
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STD3NM60N en.DM00052307.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.3A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.3A
Power dissipation: 50W
Case: DPAK
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 9.5nC
Produkt ist nicht verfügbar
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STD5NM60T4 std5nm60.pdf
STD5NM60T4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.1A; 96W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.1A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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STD9NM60N en.CD00286931.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; Idm: 26A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 745mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17.4nC
Pulsed drain current: 26A
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STP9NM60N en.CD00286931.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; 70W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: TO220-3
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 17.4nC
Kind of channel: enhancement
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STGP20NC60V description en.CD00003669.pdf
STGP20NC60V
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO220AB
Type of transistor: IGBT
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Collector-emitter voltage: 600V
Gate charge: 0.1µC
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SMAJ85CA-TR SMAJxxX_ser.pdf
SMAJ85CA-TR
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 99V; 13A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 99V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
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167+0.51 EUR
210+0.4 EUR
278+0.31 EUR
500+0.24 EUR
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SMAJ154A-TR SMAJxxX_ser.pdf
SMAJ154A-TR
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 171V; 7A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 154V
Breakdown voltage: 171V
Max. forward impulse current: 7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Leakage current: 1µA
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132+0.64 EUR
154+0.56 EUR
172+0.5 EUR
262+0.32 EUR
500+0.25 EUR
1000+0.23 EUR
2000+0.21 EUR
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SMAJ30CA-TR SMAJxxX_ser.pdf
SMAJ30CA-TR
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3V; 36A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
auf Bestellung 17763 Stücke:
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167+0.51 EUR
230+0.37 EUR
307+0.27 EUR
348+0.25 EUR
410+0.2 EUR
500+0.18 EUR
1000+0.15 EUR
3000+0.13 EUR
5000+0.12 EUR
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SMBJ6.5CA-TR SMBJ6.5CA.pdf
SMBJ6.5CA-TR
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape
Manufacturer series: SMBJ
Mounting: SMD
Type of diode: TVS
Leakage current: 50µA
Max. off-state voltage: 6.5V
Breakdown voltage: 7.2...7.58V
Max. forward impulse current: 266A
Kind of package: reel; tape
Peak pulse power dissipation: 0.6kW
Case: SMB
Semiconductor structure: bidirectional
auf Bestellung 414 Stücke:
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358+0.24 EUR
410+0.2 EUR
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SMBJ6.5CA-TR cd00001366.pdf
SMBJ6.5CA-TR
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape
Manufacturer series: SMBJ
Mounting: SMD
Type of diode: TVS
Leakage current: 50µA
Max. off-state voltage: 6.5V
Breakdown voltage: 7.2...7.58V
Max. forward impulse current: 266A
Kind of package: reel; tape
Peak pulse power dissipation: 0.6kW
Case: SMB
Semiconductor structure: bidirectional
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STM8S103F2M6 STM8S103F2-DTE.pdf
STM8S103F2M6
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F2M6TR STM8S103F2-DTE.pdf
STM8S103F2M6TR
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F2P3TR STM8S103F2-DTE.pdf
STM8S103F2P3TR
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F2P6TR STM8S103F2-DTE.pdf
STM8S103F2P6TR
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F3M6TR STM8S103F2-DTE.pdf
STM8S103F3M6TR
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F3P3 en.CD00226640.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F3P3TR STM8S103F2-DTE.pdf
STM8S103F3P3TR
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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BTB24-800CWRG btb24.pdf
BTB24-800CWRG
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35mA
Mounting: THT
auf Bestellung 108 Stücke:
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29+2.98 EUR
33+2.64 EUR
41+2.11 EUR
50+1.71 EUR
59+1.46 EUR
100+1.3 EUR
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STM32F205RGT6 STM32F205VCT6.pdf
STM32F205RGT6
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; I2C; IrDA; LIN; MMC; SPI; USART; USB OTG
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); DMA; LCD controller; PoR; PWM
Memory: 132kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
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STM32F205RGT6TR stm32f205rb.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
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STM32F205RGT6V stm32f205rb.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Produkt ist nicht verfügbar
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