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TS321AIYLT TS321AIYLT STMicroelectronics ts321.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 1; 3÷30VDC; SOT23-5; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 1
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: low power
Input offset voltage: 3mV
Kind of package: reel; tape
Application: automotive industry
Voltage supply range: 3...30V DC
Input offset current: 50nA
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TS321IYLT TS321IYLT STMicroelectronics ts321.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 1; 3÷30VDC; SOT23-5; 5mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 1
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: low power
Input offset voltage: 5mV
Kind of package: reel; tape
Application: automotive industry
Voltage supply range: 3...30V DC
Input offset current: 50nA
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BAT46AWFILM BAT46AWFILM STMicroelectronics en.CD00004930.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 100V; 0.15A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: common anode; double
Case: SOT323
Max. forward voltage: 0.45V
Max. forward impulse current: 1A
Kind of package: reel; tape
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STL8N80K5 STMicroelectronics en.DM00072732.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.5A; Idm: 18A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.5A
Power dissipation: 42W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 16.5nC
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STM8S105S4T6C STM8S105S4T6C STMicroelectronics STM8S105C4-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
Interface: I2C; IrDA; SPI; UART
Type of integrated circuit: STM8 microcontroller
Integrated circuit features: Beeper; IWDG; WWDG
Clock frequency: 16MHz
Kind of core: 8-bit
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 16bit timers: 3
Case: LQFP44
Number of 10bit A/D converters: 9
Family: STM8S
Mounting: SMD
Supply voltage: 3...5.5V DC
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TIP29C TIP29C STMicroelectronics tip29c.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Mounting: THT
Kind of package: tube
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TIP29A TIP29A STMicroelectronics tip29c.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
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BAT30SWFILM BAT30SWFILM STMicroelectronics bat30.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 0.53V
Max. forward impulse current: 1A
Kind of package: reel; tape
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SMAJ188CA-TR SMAJ188CA-TR STMicroelectronics SMAJxxX_ser.pdf description Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 209V; 6A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ188A-TR SMAJ188A-TR STMicroelectronics SMAJxxX_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 209V; 6A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ40A-TR SMAJ40A-TR STMicroelectronics SMAJxxX_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4V; 27A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
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STEVAL-ILL059V1 STMicroelectronics STEVAL-ILL059V1.pdf Category: STM development kits
Description: Dev.kit: evaluation; Comp: STAP16DPS05,STM8A; base board
Type of development kit: evaluation
Components: STAP16DPS05; STM8A
Connection: Jack 3.5mm socket
Kind of integrated circuit: LED driver
Kit contents: base board
Additional functions: DC/DC converter
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1N5819 1N5819 STMicroelectronics 1N5819RL.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Case: DO41
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
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LD39130SPUR STMicroelectronics ld39130s.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷4V; 0.3A; DFN6
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.3V
Output voltage: 0.8...4V
Output current: 0.3A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39130S
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 1.4...5.5V
Integrated circuit features: GREEN MODE pin; shutdown mode control input
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VIPER115LSTR STMicroelectronics en.DM00335815.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 60kHz; SSOP10; buck-boost,flyback; Uin: 4.5÷30V; Ubr: 800V
Operating temperature: -40...150°C
Type of integrated circuit: PMIC
Mounting: SMD
Case: SSOP10
Input voltage: 4.5...30V
Power: 12W
Frequency: 60kHz
Breakdown voltage: 800V
Topology: buck-boost; flyback
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M24C64-DRMN3TP/K STMicroelectronics en.DM00051766.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 8kx8bit; SOIC8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
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SMBJ26A-TR SMBJ26A-TR STMicroelectronics SMBJ26A-TR.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.9÷30.4V; 75A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...30.4V
Max. forward impulse current: 75A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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LF50CV LF50CV STMicroelectronics lfxx.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; TO220AB; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 5V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: LFXX
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Heatsink thickness: 0.51...0.6mm
Input voltage: 6...16V
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BD677 BD677 STMicroelectronics BD678.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
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SMBJ10A-TR SMBJ10A-TR STMicroelectronics SMBJ-st.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 11.1÷11.7V; 184A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...11.7V
Max. forward impulse current: 184A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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1N5817 1N5817 STMicroelectronics 1N5819RL.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
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STM32F051K8U7TR STMicroelectronics en.DM00039193.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; UFQFPN32; 2÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: HDMI CEC; I2C; SPI; USART x2
Kind of architecture: Cortex M0
Memory: 8kB SRAM; 64kB FLASH
Number of 16bit timers: 7
Number of 32bit timers: 1
Family: STM32F0
Kind of core: 32-bit
Number of 12bit D/A converters: 1
Kind of package: reel; tape
Number of 12bit A/D converters: 13
Integrated circuit features: CRC; PdR; PoR; PVD; PWM; RTC; watchdog
Operating temperature: -40...105°C
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STM32F411RCT7 STM32F411RCT7 STMicroelectronics en.DM00115249.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; LQFP64; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 50
Case: LQFP64
Interface: I2C; I2S; IrDA; MMC; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Kind of core: 32-bit
Operating temperature: -40...105°C
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STP35N60DM2 STP35N60DM2 STMicroelectronics STP35N60DM2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Power dissipation: 210W
Case: TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Version: ESD
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
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Z0103MN 6AA4 Z0103MN 6AA4 STMicroelectronics en.CD00002268.pdf Category: Triacs
Description: Triac; 600V; 1A; Igt: 3mA; SOT223; reel,tape; Ifsm: 8A
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 3mA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
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STD13NM60ND STD13NM60ND STMicroelectronics STx13NM60ND_DS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 109W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 109W
Case: DPAK
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 24.5nC
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TS912AIDT TS912AIDT STMicroelectronics TS912IDT.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
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TS912IDT TS912IDT STMicroelectronics TS912IDT.pdf description Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
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TS912BIDT TS912BIDT STMicroelectronics ts912b.pdf description Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 2mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
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TS912ID TS912ID STMicroelectronics TS912IDT.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: tube
Input bias current: 0.3nA
Input offset current: 0.2nA
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TS912IYDT TS912IYDT STMicroelectronics ts912.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
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TS912AIYDT TS912AIYDT STMicroelectronics ts912a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
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TS912BIYDT TS912BIYDT STMicroelectronics ts912b.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷16VDC; SO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
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BD243C BD243C STMicroelectronics BD244C-STMicroelectronics.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 115V
Collector current: 6A
Power: 65W
Case: TO220
Mounting: THT
Frequency: 3MHz
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BD677A BD677A STMicroelectronics BD678.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
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M24C02-FMN6TP M24C02-FMN6TP STMicroelectronics m24c01-r.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN5
Kind of interface: serial
Operating temperature: -40...85°C
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STL15N65M5 STMicroelectronics stl15n65m5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 52W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Power dissipation: 52W
Case: PowerFLAT 5x6
Mounting: SMD
Gate charge: 22nC
Polarisation: unipolar
Technology: MDmesh™
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 375mΩ
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STFW40N60M2 STMicroelectronics en.DM00116766.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 34A; 63W; TO3PF
Type of transistor: N-MOSFET
Technology: MDmesh™
Power dissipation: 63W
Case: TO3PF
Mounting: THT
Gate charge: 57nC
On-state resistance: 78mΩ
Polarisation: unipolar
Drain current: 34A
Kind of channel: enhancement
Drain-source voltage: 600V
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ACS102-6TA-TR ACS102-6TA-TR STMicroelectronics acs102-6t.pdf Category: Triacs
Description: 600V; 5mA; TO92; Features: alternistor
Max. off-state voltage: 0.6kV
Gate current: 5mA
Case: TO92
Mounting: THT
Features of semiconductor devices: alternistor
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STD8N60DM2 STD8N60DM2 STMicroelectronics en.DM00184996.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 85W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Power dissipation: 85W
Case: DPAK; TO252
Mounting: SMD
Gate charge: 4nC
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 570mΩ
Produkt ist nicht verfügbar
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STF18N60M2 STF18N60M2 STMicroelectronics en.DM00086774.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 25W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 255mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 21.5nC
Produkt ist nicht verfügbar
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1N5818 1N5818 STMicroelectronics 1N5819RL.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
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LD3985M28R LD3985M28R STMicroelectronics ld3985.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD3985
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2.5...6V
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BZW50-27RL STMicroelectronics cd00000695.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 30V; 103A; unidirectional; R6; Ch: 1; -65÷175°C; 7nF
Type of diode: TVS
Max. off-state voltage: 27V
Breakdown voltage: 30V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Peak pulse power dissipation: 5kW
Operating temperature: -65...175°C
Capacitance: 7nF
Number of channels: 1
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STW9NK90Z STW9NK90Z STMicroelectronics STF9NK90Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STB6N60M2 STB6N60M2 STMicroelectronics en.DM00087513.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 60W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 60W
Case: D2PAK
Mounting: SMD
Drain current: 4.5A
Drain-source voltage: 600V
On-state resistance: 1.2mΩ
Gate charge: 8nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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STD6N60DM2 STD6N60DM2 STMicroelectronics std6n60dm2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252
Type of transistor: N-MOSFET
Power dissipation: 60W
Case: DPAK; TO252
Mounting: SMD
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 1.1Ω
Gate charge: 6.2nC
Polarisation: unipolar
Technology: MDmesh™
Produkt ist nicht verfügbar
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STM32F427ZIT7 STM32F427ZIT7 STMicroelectronics en.DM00071990.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC
Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Number of inputs/outputs: 114
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...105°C
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of architecture: Cortex M4
Clock frequency: 180MHz
Kind of core: 32-bit
Memory: 256kB SRAM; 2MB FLASH
Number of 12bit D/A converters: 2
Kind of package: in-tray
Number of 16bit timers: 14
Number of 12bit A/D converters: 24
Case: LQFP144
Family: STM32F4
Mounting: SMD
Supply voltage: 1.8...3.6V DC
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SM6T36A SM6T36A STMicroelectronics SM6T.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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Z0107MA 2AL2 Z0107MA 2AL2 STMicroelectronics en.CD00002268.pdf Category: Triacs
Description: Triac; 600V; 1A; Igt: 5mA; TO92; Ammo Pack; Ifsm: 8A
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 8A
Produkt ist nicht verfügbar
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STPS5L40 STPS5L40 STMicroelectronics en.CD00002923.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. load current: 15A
Max. forward impulse current: 150A
Kind of package: Ammo Pack
Leakage current: 75mA
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Z0405MH Z0405MH STMicroelectronics en.DM00908043.pdf Category: Triacs
Description: Triac; 600V; 4A; Igt: 5mA; IPAK; tube; Ifsm: 16A
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 5mA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 16A
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SM15T30A SM15T30A STMicroelectronics SM15T.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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SM15T30CA SM15T30CA STMicroelectronics SM15T.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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VNS3NV04PTR-E STMicroelectronics en.CD00232418.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; SOIC8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOIC8
On-state resistance: 0.12Ω
Active logical level: low
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
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SMCJ33CA-TR SMCJ33CA-TR STMicroelectronics SMCJ33CA-TR.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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STL120N10F8 STL120N10F8 STMicroelectronics en.DM00852148.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
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VL53L3CXV0DH/1 STMicroelectronics vl53l3cx.pdf Category: Unclassified
Description: VL53L3CXV0DH/1
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STF20N65M5 STF20N65M5 STMicroelectronics en.DM00076416.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Power dissipation: 30W
Case: TO220FP
Mounting: THT
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.19Ω
Polarisation: unipolar
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MJD45H11T4 MJD45H11T4 STMicroelectronics MJD44H11_MJD45H11.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
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TS321AIYLT ts321.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 1; 3÷30VDC; SOT23-5; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 1
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: low power
Input offset voltage: 3mV
Kind of package: reel; tape
Application: automotive industry
Voltage supply range: 3...30V DC
Input offset current: 50nA
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TS321IYLT ts321.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 1; 3÷30VDC; SOT23-5; 5mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 1
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: low power
Input offset voltage: 5mV
Kind of package: reel; tape
Application: automotive industry
Voltage supply range: 3...30V DC
Input offset current: 50nA
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BAT46AWFILM en.CD00004930.pdf
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 100V; 0.15A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: common anode; double
Case: SOT323
Max. forward voltage: 0.45V
Max. forward impulse current: 1A
Kind of package: reel; tape
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STL8N80K5 en.DM00072732.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.5A; Idm: 18A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.5A
Power dissipation: 42W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 16.5nC
Produkt ist nicht verfügbar
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STM8S105S4T6C STM8S105C4-DTE.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
Interface: I2C; IrDA; SPI; UART
Type of integrated circuit: STM8 microcontroller
Integrated circuit features: Beeper; IWDG; WWDG
Clock frequency: 16MHz
Kind of core: 8-bit
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 16bit timers: 3
Case: LQFP44
Number of 10bit A/D converters: 9
Family: STM8S
Mounting: SMD
Supply voltage: 3...5.5V DC
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TIP29C tip29c.pdf
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Mounting: THT
Kind of package: tube
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TIP29A tip29c.pdf
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
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BAT30SWFILM bat30.pdf
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 0.53V
Max. forward impulse current: 1A
Kind of package: reel; tape
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SMAJ188CA-TR description SMAJxxX_ser.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 209V; 6A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ188A-TR SMAJxxX_ser.pdf
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 209V; 6A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ40A-TR SMAJxxX_ser.pdf
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4V; 27A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
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STEVAL-ILL059V1 STEVAL-ILL059V1.pdf
Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STAP16DPS05,STM8A; base board
Type of development kit: evaluation
Components: STAP16DPS05; STM8A
Connection: Jack 3.5mm socket
Kind of integrated circuit: LED driver
Kit contents: base board
Additional functions: DC/DC converter
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1N5819 1N5819RL.pdf
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Case: DO41
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
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LD39130SPUR ld39130s.pdf
Hersteller: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷4V; 0.3A; DFN6
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.3V
Output voltage: 0.8...4V
Output current: 0.3A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39130S
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 1.4...5.5V
Integrated circuit features: GREEN MODE pin; shutdown mode control input
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VIPER115LSTR en.DM00335815.pdf
Hersteller: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 60kHz; SSOP10; buck-boost,flyback; Uin: 4.5÷30V; Ubr: 800V
Operating temperature: -40...150°C
Type of integrated circuit: PMIC
Mounting: SMD
Case: SSOP10
Input voltage: 4.5...30V
Power: 12W
Frequency: 60kHz
Breakdown voltage: 800V
Topology: buck-boost; flyback
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M24C64-DRMN3TP/K en.DM00051766.pdf
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 8kx8bit; SOIC8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
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SMBJ26A-TR SMBJ26A-TR.pdf
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.9÷30.4V; 75A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...30.4V
Max. forward impulse current: 75A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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LF50CV lfxx.pdf
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; TO220AB; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 5V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: LFXX
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Heatsink thickness: 0.51...0.6mm
Input voltage: 6...16V
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BD677 BD678.pdf
Hersteller: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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SMBJ10A-TR SMBJ-st.pdf
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 11.1÷11.7V; 184A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...11.7V
Max. forward impulse current: 184A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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1N5817 1N5819RL.pdf
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
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STM32F051K8U7TR en.DM00039193.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; UFQFPN32; 2÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: HDMI CEC; I2C; SPI; USART x2
Kind of architecture: Cortex M0
Memory: 8kB SRAM; 64kB FLASH
Number of 16bit timers: 7
Number of 32bit timers: 1
Family: STM32F0
Kind of core: 32-bit
Number of 12bit D/A converters: 1
Kind of package: reel; tape
Number of 12bit A/D converters: 13
Integrated circuit features: CRC; PdR; PoR; PVD; PWM; RTC; watchdog
Operating temperature: -40...105°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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STM32F411RCT7 en.DM00115249.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; LQFP64; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 50
Case: LQFP64
Interface: I2C; I2S; IrDA; MMC; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Kind of core: 32-bit
Operating temperature: -40...105°C
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STP35N60DM2 STP35N60DM2.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Power dissipation: 210W
Case: TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Version: ESD
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Produkt ist nicht verfügbar
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Z0103MN 6AA4 en.CD00002268.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; Igt: 3mA; SOT223; reel,tape; Ifsm: 8A
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 3mA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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STD13NM60ND STx13NM60ND_DS.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 109W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 109W
Case: DPAK
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 24.5nC
Produkt ist nicht verfügbar
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TS912AIDT TS912IDT.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
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TS912IDT description TS912IDT.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
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TS912BIDT description ts912b.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 2mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Produkt ist nicht verfügbar
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TS912ID TS912IDT.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: tube
Input bias current: 0.3nA
Input offset current: 0.2nA
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TS912IYDT ts912.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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TS912AIYDT ts912a.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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TS912BIYDT ts912b.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷16VDC; SO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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BD243C BD244C-STMicroelectronics.pdf
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 115V
Collector current: 6A
Power: 65W
Case: TO220
Mounting: THT
Frequency: 3MHz
Produkt ist nicht verfügbar
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BD677A BD678.pdf
Hersteller: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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M24C02-FMN6TP m24c01-r.pdf
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN5
Kind of interface: serial
Operating temperature: -40...85°C
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STL15N65M5 stl15n65m5.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 52W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Power dissipation: 52W
Case: PowerFLAT 5x6
Mounting: SMD
Gate charge: 22nC
Polarisation: unipolar
Technology: MDmesh™
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 375mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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STFW40N60M2 en.DM00116766.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 34A; 63W; TO3PF
Type of transistor: N-MOSFET
Technology: MDmesh™
Power dissipation: 63W
Case: TO3PF
Mounting: THT
Gate charge: 57nC
On-state resistance: 78mΩ
Polarisation: unipolar
Drain current: 34A
Kind of channel: enhancement
Drain-source voltage: 600V
auf Bestellung 58 Stücke:
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ACS102-6TA-TR acs102-6t.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: 600V; 5mA; TO92; Features: alternistor
Max. off-state voltage: 0.6kV
Gate current: 5mA
Case: TO92
Mounting: THT
Features of semiconductor devices: alternistor
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Mindestbestellmenge: 4000 Stücke
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STD8N60DM2 en.DM00184996.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 85W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Power dissipation: 85W
Case: DPAK; TO252
Mounting: SMD
Gate charge: 4nC
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 570mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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STF18N60M2 en.DM00086774.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 25W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 255mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 21.5nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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1N5818 1N5819RL.pdf
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
auf Bestellung 2440 Stücke:
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LD3985M28R ld3985.pdf
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD3985
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2.5...6V
Produkt ist nicht verfügbar
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BZW50-27RL cd00000695.pdf
Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 30V; 103A; unidirectional; R6; Ch: 1; -65÷175°C; 7nF
Type of diode: TVS
Max. off-state voltage: 27V
Breakdown voltage: 30V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Peak pulse power dissipation: 5kW
Operating temperature: -65...175°C
Capacitance: 7nF
Number of channels: 1
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Mindestbestellmenge: 1000 Stücke
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STW9NK90Z STF9NK90Z.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 134 Stücke:
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STB6N60M2 en.DM00087513.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 60W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 60W
Case: D2PAK
Mounting: SMD
Drain current: 4.5A
Drain-source voltage: 600V
On-state resistance: 1.2mΩ
Gate charge: 8nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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STD6N60DM2 std6n60dm2.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252
Type of transistor: N-MOSFET
Power dissipation: 60W
Case: DPAK; TO252
Mounting: SMD
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 1.1Ω
Gate charge: 6.2nC
Polarisation: unipolar
Technology: MDmesh™
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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STM32F427ZIT7 en.DM00071990.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC
Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Number of inputs/outputs: 114
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...105°C
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of architecture: Cortex M4
Clock frequency: 180MHz
Kind of core: 32-bit
Memory: 256kB SRAM; 2MB FLASH
Number of 12bit D/A converters: 2
Kind of package: in-tray
Number of 16bit timers: 14
Number of 12bit A/D converters: 24
Case: LQFP144
Family: STM32F4
Mounting: SMD
Supply voltage: 1.8...3.6V DC
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SM6T36A SM6T.pdf
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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Z0107MA 2AL2 en.CD00002268.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; Igt: 5mA; TO92; Ammo Pack; Ifsm: 8A
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 8A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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STPS5L40 en.CD00002923.pdf
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. load current: 15A
Max. forward impulse current: 150A
Kind of package: Ammo Pack
Leakage current: 75mA
auf Bestellung 667 Stücke:
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Z0405MH en.DM00908043.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 4A; Igt: 5mA; IPAK; tube; Ifsm: 16A
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 5mA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 16A
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SM15T30A SM15T.pdf
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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SM15T30CA SM15T.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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VNS3NV04PTR-E en.CD00232418.pdf
Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; SOIC8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOIC8
On-state resistance: 0.12Ω
Active logical level: low
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
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Lieferzeit 14-21 Tag (e)
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SMCJ33CA-TR SMCJ33CA-TR.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
auf Bestellung 2163 Stücke:
Lieferzeit 14-21 Tag (e)
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STL120N10F8 en.DM00852148.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2990 Stücke:
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VL53L3CXV0DH/1 vl53l3cx.pdf
Hersteller: STMicroelectronics
Category: Unclassified
Description: VL53L3CXV0DH/1
auf Bestellung 4500 Stücke:
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Mindestbestellmenge: 4500 Stücke
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STF20N65M5 en.DM00076416.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Power dissipation: 30W
Case: TO220FP
Mounting: THT
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.19Ω
Polarisation: unipolar
auf Bestellung 286 Stücke:
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MJD45H11T4 MJD44H11_MJD45H11.pdf
Hersteller: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 527 Stücke:
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