Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (131540) > Seite 2193 nach 2193
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STP13N80K5 | STMicroelectronics |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
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STB13N80K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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STFU13N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.6A; 35W; ESD Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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STF15N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 14A; 35W Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 14A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 375mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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STW15N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; 190W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.8A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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2N2222A | STMicroelectronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 40V; 800mA; 500mW; TO18 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.8A Case: TO18 Mounting: THT Frequency: 250MHz Power: 0.5W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TIP127 | STMicroelectronics |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 5A; 65W; TO220AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 5A Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 65W |
auf Bestellung 207 Stücke: Lieferzeit 14-21 Tag (e) |
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STTH16L06CFP | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; TO220FPAB; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 120A Case: TO220FPAB Kind of package: tube Max. forward voltage: 1.05V Reverse recovery time: 35ns |
auf Bestellung 109 Stücke: Lieferzeit 14-21 Tag (e) |
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STTH16L06CT | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; TO220AB; tube; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 120A Case: TO220AB Kind of package: tube Max. forward voltage: 2.08V Max. load current: 30A Leakage current: 8µA Reverse recovery time: 35ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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STTH16L06CTY | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8Ax2; Ifsm: 120A; TO220AB; tube; Ir: 8uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 120A Case: TO220AB Kind of package: tube Max. forward voltage: 2.08V Max. load current: 30A Leakage current: 8µA Reverse recovery time: 35ns Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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STTH3R06U | STMicroelectronics |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMB; Ufmax: 1V; Ifsm: 45A Semiconductor structure: single diode Max. off-state voltage: 0.6kV Load current: 3A Case: SMB Max. forward voltage: 1V Max. forward impulse current: 45A Reverse recovery time: 35ns Kind of package: reel; tape Type of diode: rectifying Mounting: SMD Features of semiconductor devices: ultrafast switching |
auf Bestellung 5056 Stücke: Lieferzeit 14-21 Tag (e) |
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STTH1212D | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 12A; Ifsm: 100A; TO220AC; tube; 50ns Semiconductor structure: single diode Max. off-state voltage: 1.2kV Load current: 12A Case: TO220AC Max. forward voltage: 1.25V Max. forward impulse current: 100A Reverse recovery time: 50ns Kind of package: tube Type of diode: rectifying Mounting: THT Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.23...1.32mm |
auf Bestellung 133 Stücke: Lieferzeit 14-21 Tag (e) |
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STTH1R04A | STMicroelectronics |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 14ns; SMA; Ufmax: 0.9V; Ifsm: 30A Semiconductor structure: single diode Max. off-state voltage: 0.4kV Load current: 1A Case: SMA Max. forward voltage: 0.9V Max. forward impulse current: 30A Reverse recovery time: 14ns Kind of package: reel; tape Type of diode: rectifying Mounting: SMD Features of semiconductor devices: ultrafast switching |
auf Bestellung 1965 Stücke: Lieferzeit 14-21 Tag (e) |
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| ST25DV04K-JFR6D3 | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; I2C Type of integrated circuit: EEPROM memory Interface: I2C Mounting: SMD Operating temperature: -40...105°C |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| ST25DV64KC-JF8D3 | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; I2C Type of integrated circuit: EEPROM memory Interface: I2C Mounting: SMD Operating temperature: -40...105°C |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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STM32L412K8T6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 80MHz; LQFP32; 1.71÷3.6VDC; Cmp: 1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 80MHz Mounting: SMD Number of inputs/outputs: 26 Case: LQFP32 Supply voltage: 1.71...3.6V DC Interface: GPIO; I2C; LPUART; SPI; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog Memory: 40kB SRAM; 64kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 2 Family: STM32L4 Kind of core: 32-bit Number of comparators: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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M48T37V-10MH1F | STMicroelectronics |
Category: RTC circuits Description: IC: RTC circuit; timer/calendar; parallel; NV SRAM; 256kbSRAM Type of integrated circuit: RTC circuit Kind of integrated circuit: timer/calendar Mounting: SMD Case: BSSOP44 Trade name: TIMEKEEPER® Clock format: HH:MM:SS (24h) Date format: YY-MM-DD-dd Memory: 256kb SRAM Interface: parallel Operating voltage: 3...3.6V Kind of memory: NV SRAM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 936 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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M48T35AV-10MH1F | STMicroelectronics |
Category: RTC circuits Description: IC: RTC circuit; timer/calendar; parallel; NV SRAM; 256kbSRAM Type of integrated circuit: RTC circuit Kind of integrated circuit: timer/calendar Mounting: SMD Case: SOH28 Trade name: TIMEKEEPER® Clock format: HH:MM:SS (24h) Date format: YY-MM-DD-dd Memory: 256kb SRAM Interface: parallel Operating voltage: 3...3.6V Kind of memory: NV SRAM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 936 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| VN5E010MHTR-E | STMicroelectronics |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; HPAK Type of integrated circuit: power switch Kind of integrated circuit: high-side Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: HPAK On-state resistance: 10mΩ Active logical level: high |
auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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ESDLIN03-1BWY | STMicroelectronics |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; ESD; 250W; 28.5V; 3.7A; bidirectional; SOT323 Mounting: SMD Case: SOT323 Max. forward impulse current: 3.7A Peak pulse power dissipation: 0.25kW Version: ESD Application: automotive industry Max. off-state voltage: 26.5V Semiconductor structure: bidirectional Leakage current: 50nA Capacitance: 3.5pF Type of diode: TVS Breakdown voltage: 28.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STP13N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 5.26 EUR |
| 19+ | 4.66 EUR |
| 23+ | 3.76 EUR |
| STB13N80K5 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STFU13N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STF15N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 14A; 35W
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 375mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 14A; 35W
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 375mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 5.7 EUR |
| 16+ | 5.31 EUR |
| STW15N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.8A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.8A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N2222A |
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Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 800mA; 500mW; TO18
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.8A
Case: TO18
Mounting: THT
Frequency: 250MHz
Power: 0.5W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 800mA; 500mW; TO18
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.8A
Case: TO18
Mounting: THT
Frequency: 250MHz
Power: 0.5W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TIP127 |
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Hersteller: STMicroelectronics
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 5A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 65W
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 5A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 65W
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 77+ | 1.11 EUR |
| 100+ | 0.86 EUR |
| 136+ | 0.63 EUR |
| 156+ | 0.55 EUR |
| STTH16L06CFP |
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Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; TO220FPAB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: TO220FPAB
Kind of package: tube
Max. forward voltage: 1.05V
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; TO220FPAB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: TO220FPAB
Kind of package: tube
Max. forward voltage: 1.05V
Reverse recovery time: 35ns
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 2.89 EUR |
| 36+ | 2.37 EUR |
| 41+ | 2.07 EUR |
| 49+ | 1.75 EUR |
| 50+ | 1.71 EUR |
| STTH16L06CT |
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Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; TO220AB; tube; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 2.08V
Max. load current: 30A
Leakage current: 8µA
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; TO220AB; tube; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 2.08V
Max. load current: 30A
Leakage current: 8µA
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STTH16L06CTY |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; Ifsm: 120A; TO220AB; tube; Ir: 8uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 2.08V
Max. load current: 30A
Leakage current: 8µA
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; Ifsm: 120A; TO220AB; tube; Ir: 8uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 2.08V
Max. load current: 30A
Leakage current: 8µA
Reverse recovery time: 35ns
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STTH3R06U |
|
Hersteller: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMB; Ufmax: 1V; Ifsm: 45A
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Load current: 3A
Case: SMB
Max. forward voltage: 1V
Max. forward impulse current: 45A
Reverse recovery time: 35ns
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMB; Ufmax: 1V; Ifsm: 45A
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Load current: 3A
Case: SMB
Max. forward voltage: 1V
Max. forward impulse current: 45A
Reverse recovery time: 35ns
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Features of semiconductor devices: ultrafast switching
auf Bestellung 5056 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 122+ | 0.7 EUR |
| 147+ | 0.58 EUR |
| 166+ | 0.51 EUR |
| 266+ | 0.32 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.23 EUR |
| STTH1212D |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; Ifsm: 100A; TO220AC; tube; 50ns
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 12A
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 100A
Reverse recovery time: 50ns
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; Ifsm: 100A; TO220AC; tube; 50ns
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 12A
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 100A
Reverse recovery time: 50ns
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
auf Bestellung 133 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 51+ | 1.69 EUR |
| 65+ | 1.32 EUR |
| 120+ | 0.71 EUR |
| STTH1R04A |
|
Hersteller: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 14ns; SMA; Ufmax: 0.9V; Ifsm: 30A
Semiconductor structure: single diode
Max. off-state voltage: 0.4kV
Load current: 1A
Case: SMA
Max. forward voltage: 0.9V
Max. forward impulse current: 30A
Reverse recovery time: 14ns
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 14ns; SMA; Ufmax: 0.9V; Ifsm: 30A
Semiconductor structure: single diode
Max. off-state voltage: 0.4kV
Load current: 1A
Case: SMA
Max. forward voltage: 0.9V
Max. forward impulse current: 30A
Reverse recovery time: 14ns
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Features of semiconductor devices: ultrafast switching
auf Bestellung 1965 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 313+ | 0.27 EUR |
| 544+ | 0.15 EUR |
| 603+ | 0.14 EUR |
| 650+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| ST25DV04K-JFR6D3 |
|
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C
Type of integrated circuit: EEPROM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C
Type of integrated circuit: EEPROM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...105°C
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.94 EUR |
| ST25DV64KC-JF8D3 |
|
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C
Type of integrated circuit: EEPROM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C
Type of integrated circuit: EEPROM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...105°C
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 1.69 EUR |
| STM32L412K8T6 |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; LQFP32; 1.71÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: LQFP32
Supply voltage: 1.71...3.6V DC
Interface: GPIO; I2C; LPUART; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 40kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Family: STM32L4
Kind of core: 32-bit
Number of comparators: 1
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; LQFP32; 1.71÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: LQFP32
Supply voltage: 1.71...3.6V DC
Interface: GPIO; I2C; LPUART; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 40kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Family: STM32L4
Kind of core: 32-bit
Number of comparators: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| M48T37V-10MH1F |
|
Hersteller: STMicroelectronics
Category: RTC circuits
Description: IC: RTC circuit; timer/calendar; parallel; NV SRAM; 256kbSRAM
Type of integrated circuit: RTC circuit
Kind of integrated circuit: timer/calendar
Mounting: SMD
Case: BSSOP44
Trade name: TIMEKEEPER®
Clock format: HH:MM:SS (24h)
Date format: YY-MM-DD-dd
Memory: 256kb SRAM
Interface: parallel
Operating voltage: 3...3.6V
Kind of memory: NV SRAM
Category: RTC circuits
Description: IC: RTC circuit; timer/calendar; parallel; NV SRAM; 256kbSRAM
Type of integrated circuit: RTC circuit
Kind of integrated circuit: timer/calendar
Mounting: SMD
Case: BSSOP44
Trade name: TIMEKEEPER®
Clock format: HH:MM:SS (24h)
Date format: YY-MM-DD-dd
Memory: 256kb SRAM
Interface: parallel
Operating voltage: 3...3.6V
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 936 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| M48T35AV-10MH1F |
|
Hersteller: STMicroelectronics
Category: RTC circuits
Description: IC: RTC circuit; timer/calendar; parallel; NV SRAM; 256kbSRAM
Type of integrated circuit: RTC circuit
Kind of integrated circuit: timer/calendar
Mounting: SMD
Case: SOH28
Trade name: TIMEKEEPER®
Clock format: HH:MM:SS (24h)
Date format: YY-MM-DD-dd
Memory: 256kb SRAM
Interface: parallel
Operating voltage: 3...3.6V
Kind of memory: NV SRAM
Category: RTC circuits
Description: IC: RTC circuit; timer/calendar; parallel; NV SRAM; 256kbSRAM
Type of integrated circuit: RTC circuit
Kind of integrated circuit: timer/calendar
Mounting: SMD
Case: SOH28
Trade name: TIMEKEEPER®
Clock format: HH:MM:SS (24h)
Date format: YY-MM-DD-dd
Memory: 256kb SRAM
Interface: parallel
Operating voltage: 3...3.6V
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 936 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| VN5E010MHTR-E |
|
Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; HPAK
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: HPAK
On-state resistance: 10mΩ
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; HPAK
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: HPAK
On-state resistance: 10mΩ
Active logical level: high
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 3.77 EUR |
| ESDLIN03-1BWY |
|
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 250W; 28.5V; 3.7A; bidirectional; SOT323
Mounting: SMD
Case: SOT323
Max. forward impulse current: 3.7A
Peak pulse power dissipation: 0.25kW
Version: ESD
Application: automotive industry
Max. off-state voltage: 26.5V
Semiconductor structure: bidirectional
Leakage current: 50nA
Capacitance: 3.5pF
Type of diode: TVS
Breakdown voltage: 28.5V
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 250W; 28.5V; 3.7A; bidirectional; SOT323
Mounting: SMD
Case: SOT323
Max. forward impulse current: 3.7A
Peak pulse power dissipation: 0.25kW
Version: ESD
Application: automotive industry
Max. off-state voltage: 26.5V
Semiconductor structure: bidirectional
Leakage current: 50nA
Capacitance: 3.5pF
Type of diode: TVS
Breakdown voltage: 28.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH