Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (162018) > Seite 2698 nach 2701
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SM6T36AY | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
STD17NF03LT4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 12A; 30W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 12A Power dissipation: 30W Case: DPAK Gate-source voltage: ±16V On-state resistance: 60mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 3034 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
VNB35N07TR-E | STMicroelectronics |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 25A; Ch: 1; SMD; D2PAK Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 25A Number of channels: 1 Mounting: SMD Case: D2PAK On-state resistance: 28mΩ Output voltage: 55V |
auf Bestellung 1570 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
STPS5L60U | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.48V Max. forward impulse current: 90A Kind of package: reel; tape |
auf Bestellung 738 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| STPS5L60UFN | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB flat; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMB flat Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.52V Max. load current: 15A Leakage current: 100mA Max. forward impulse current: 205A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| Z0107MA 2AL2 | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A Type of thyristor: triac Mounting: THT Case: TO92 Gate current: 5mA Max. load current: 1A Max. forward impulse current: 8A Max. off-state voltage: 0.6kV Kind of package: Ammo Pack |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| Z0107SN 5AA4 | STMicroelectronics |
Category: TriacsDescription: Triac Type of thyristor: triac |
auf Bestellung 11000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||||
|
M95080-WMN6P | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; SO8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1kx8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: SO8 Kind of interface: serial |
auf Bestellung 1122 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
M95080-DFMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 20MHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
auf Bestellung 2483 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| M95080-RMC6TG | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1024x8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| M95080-DFDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| M95080-DFMC6TG | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 20MHz Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| M95080-RDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1024x8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
|
M95080-RMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1024x8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| M95080-WDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 2.5÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1024x8bit Operating voltage: 2.5...5.5V Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
|
M95080-WMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; 20MHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1kx8bit Operating voltage: 2.5...5.5V Clock frequency: 20MHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
STPS5L40 | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.5V Max. load current: 15A Max. forward impulse current: 150A Leakage current: 75mA Kind of package: Ammo Pack |
auf Bestellung 1160 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
STPS3150RL | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 150V; 3A; DO201AD; Ufmax: 0.82V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.82V Max. forward impulse current: 100A Kind of package: reel |
auf Bestellung 1496 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
PKC-136 | STMicroelectronics |
Category: Diodes - othersDescription: Diode: TVS+FRD; 700V; DO15; Ammo Pack; 10uA; Ubr: 160V Type of diode: TVS+FRD Max. off-state voltage: 700V Case: DO15 Mounting: THT Features of semiconductor devices: snubber diode; ultrafast switching Kind of package: Ammo Pack Leakage current: 10µA Breakdown voltage: 160V |
auf Bestellung 351 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| L6981N50DR | STMicroelectronics |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC Type of integrated circuit: PMIC |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||||
| LSM303AHTR | STMicroelectronics |
Category: Resistive Magnetic SensorsDescription: Sensor: accelerometer; Interface: SPI; -40÷85°C Type of sensor: accelerometer Interface: SPI Operating temperature: -40...85°C |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||||
|
Z0405MH | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: IPAK Gate current: 5mA Max. forward impulse current: 16A Mounting: THT Kind of package: tube |
auf Bestellung 129 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
STY60NK30Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 37.5A; 450W; MAX247; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 37.5A Power dissipation: 450W Case: MAX247 Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
BDX53B | STMicroelectronics |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 80V; 8A; 60W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 60W Case: TO220AB Mounting: THT Kind of package: tube Current gain: 750 |
auf Bestellung 409 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| Z0107MA 2AL2 | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 7mA Type of thyristor: triac Mounting: THT Case: TO92 Gate current: 7mA Max. load current: 1A Max. off-state voltage: 0.6kV |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||||
|
M24C01-RMN6P | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1kbEEPROM; I2C; 128x8bit; 1.8÷5.5V; 400kHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1kb EEPROM Interface: I2C Memory organisation: 128x8bit Operating voltage: 1.8...5.5V Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C Clock frequency: 400kHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
STP150N10F7 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Pulsed drain current: 440A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Gate charge: 117nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| STP150N10F7AG | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Pulsed drain current: 440A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Gate charge: 127nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
|
STP14NK60Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13.5A; 160W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.5A Case: TO220 On-state resistance: 0.5Ω Mounting: THT Power: 160W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
NUCLEO-L4R5ZI | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: STM32; Comp: STM32L4R5ZIT6; Architecture: Cortex M4 Type of development kit: STM32 Components: STM32L4R5ZIT6 Interface: USB Kind of connector: Morpho plug; pin strips; pin strips; USB B micro Kind of architecture: Cortex M4 Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors Kit contents: base board |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
STM32F769IGT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 216MHz; LQFP176; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 216MHz Mounting: SMD Number of inputs/outputs: 140 Case: LQFP176 Supply voltage: 1.7...3.6V DC Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG Kind of architecture: Cortex M7 Integrated circuit features: TRNG Memory: 512kB SRAM; 1MB FLASH Number of 12bit A/D converters: 24 Number of 12bit D/A converters: 2 Number of 16bit timers: 12 Number of 32bit timers: 2 Family: STM32F7 Kind of core: 32-bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| STM32F412CEU6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 100MHz; UFQFPN48; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 100MHz Mounting: SMD Number of inputs/outputs: 36 Case: UFQFPN48 Supply voltage: 1.7...3.6V DC Interface: CAN x2; full duplex; I2C x3; SDIO; SPI x5; USART x4; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 256kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 10 Number of 16bit timers: 14 Family: STM32F4 Kind of package: in-tray Kind of core: 32-bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STM32F412CEU6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 100MHz; UFQFPN48; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 100MHz Mounting: SMD Number of inputs/outputs: 36 Case: UFQFPN48 Supply voltage: 1.7...3.6V DC Interface: CAN x2; full duplex; I2C x3; SDIO; SPI x5; USART x4; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 256kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 10 Number of 16bit timers: 14 Family: STM32F4 Kind of package: reel; tape Kind of core: 32-bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| CR95HF-VMD5T | STMicroelectronics |
Category: Interfaces others - integrated circuitsDescription: IC: NFC/RFID tag; 2.7÷5.5VDC; SPI,UART; SMD; VFQFPN32; reel,tape Type of integrated circuit: NFC/RFID tag Supply voltage: 2.7...5.5V DC Interface: SPI; UART Mounting: SMD Case: VFQFPN32 Operating temperature: -25...85°C Kind of package: reel; tape Frequency: 13.56MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STM32L412KBU6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 80MHz; QFN32; 1.71÷3.6VDC; Cmp: 1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 80MHz Mounting: SMD Number of inputs/outputs: 26 Case: QFN32 Supply voltage: 1.71...3.6V DC Interface: GPIO; I2C; LPUART; QSPI; SPI; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog Memory: 40kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 2 Number of comparators: 1 Family: STM32L4 Kind of core: 32-bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STM32L412KBU6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 80MHz; QFN32; 1.71÷3.6VDC; Cmp: 1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 80MHz Mounting: SMD Number of inputs/outputs: 26 Case: QFN32 Supply voltage: 1.71...3.6V DC Interface: GPIO; I2C; LPUART; QSPI; SPI; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog Memory: 40kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 2 Number of comparators: 1 Family: STM32L4 Kind of core: 32-bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
|
BZW50-27B | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 30V; 103A; bidirectional; R6; 5kW; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 27V Breakdown voltage: 30V Max. forward impulse current: 103A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 5µA Kind of package: Ammo Pack |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
SM6T30A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 4007 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
P6KE30A | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Kind of package: Ammo Pack |
auf Bestellung 256 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
SM6T30CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 5747 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
SM15T30A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 36A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 1213 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
BZW50-27 | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 5kW; 30V; 103A; unidirectional; R6; reel,tape Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 27V Breakdown voltage: 30V Max. forward impulse current: 103A Semiconductor structure: unidirectional Case: R6 Mounting: THT Leakage current: 5µA Kind of package: reel; tape |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
SM15T30CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 36A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 2193 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
SM6T30AY | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
auf Bestellung 2278 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
SM6T30CAY | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
auf Bestellung 2160 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
BD678 | STMicroelectronics |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 4A Power dissipation: 40W Case: SOT32 Current gain: 750 Mounting: THT Kind of package: tube |
auf Bestellung 920 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
STF13N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 35W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
STP13N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
STB13N80K5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
STFU13N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.6A; 35W; ESD Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| ST13007DFP | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 8A; 36W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 8A Power dissipation: 36W Case: TO220FP Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
|
L9616-TR | STMicroelectronics |
Category: CAN interfaces - integrated circuitsDescription: IC: interface; transceiver; 4.5÷5.5VDC; SO8; -40÷150°C; reel,tape Operating temperature: -40...150°C Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: transceiver Supply voltage: 4.5...5.5V DC Case: SO8 Version: ESD Type of integrated circuit: interface Interface: CAN bus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| STPS340UF | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB flat; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB flat Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.57V Max. load current: 6A Max. forward impulse current: 75A Kind of package: reel; tape Leakage current: 10mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STPS340UY | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.63V Max. load current: 6A Max. forward impulse current: 75A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| P6KE400ARL | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS Type of diode: TVS |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||||
|
STG719STR | STMicroelectronics |
Category: Interfaces others - integrated circuitsDescription: IC: analog switch; demultiplexer,multiplexer,SPDT; 1.8÷5.5VDC Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer; SPDT Case: SOT23-6 Supply voltage: 1.8...5.5V DC Mounting: SMD Interface: GPIO Number of channels: 1 |
auf Bestellung 2637 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| STM32C011F4U3TR | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller Type of integrated circuit: STM32 ARM microcontroller |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||||
|
SM15T100CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 100V; 11A; bidirectional; SMC; reel,tape Case: SMC Semiconductor structure: bidirectional Mounting: SMD Type of diode: TVS Leakage current: 1µA Max. forward impulse current: 11A Max. off-state voltage: 85.5V Breakdown voltage: 100V Peak pulse power dissipation: 1.5kW Kind of package: reel; tape |
auf Bestellung 1790 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
SM15T100A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 100V; 11A; unidirectional; SMC; reel,tape Case: SMC Semiconductor structure: unidirectional Mounting: SMD Type of diode: TVS Leakage current: 1µA Max. forward impulse current: 11A Max. off-state voltage: 85.5V Breakdown voltage: 100V Peak pulse power dissipation: 1.5kW Kind of package: reel; tape |
auf Bestellung 1340 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
VND5T100AJTR-E | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: power switch; high-side; 22A; PowerSSO12; 8÷36V; reel,tape Case: PowerSSO12 Mounting: SMD Kind of integrated circuit: high-side Type of integrated circuit: power switch Operating temperature: -40...150°C On-state resistance: 0.2Ω Number of channels: 2 Output current: 22A Supply voltage: 8...36V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SM6T36AY |
![]() |
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STD17NF03LT4 |
![]() |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 30W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 30W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3034 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 99+ | 0.73 EUR |
| 129+ | 0.56 EUR |
| 163+ | 0.44 EUR |
| 180+ | 0.4 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.29 EUR |
| 2500+ | 0.27 EUR |
| VNB35N07TR-E |
![]() |
Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 25A; Ch: 1; SMD; D2PAK
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 25A
Number of channels: 1
Mounting: SMD
Case: D2PAK
On-state resistance: 28mΩ
Output voltage: 55V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 25A; Ch: 1; SMD; D2PAK
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 25A
Number of channels: 1
Mounting: SMD
Case: D2PAK
On-state resistance: 28mΩ
Output voltage: 55V
auf Bestellung 1570 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.06 EUR |
| 15+ | 4.96 EUR |
| 17+ | 4.36 EUR |
| 25+ | 3.65 EUR |
| 100+ | 3.29 EUR |
| STPS5L60U |
![]() |
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. forward impulse current: 90A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. forward impulse current: 90A
Kind of package: reel; tape
auf Bestellung 738 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 141+ | 0.51 EUR |
| 160+ | 0.45 EUR |
| 184+ | 0.39 EUR |
| 222+ | 0.32 EUR |
| 256+ | 0.28 EUR |
| 500+ | 0.23 EUR |
| STPS5L60UFN |
![]() |
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB flat
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 15A
Leakage current: 100mA
Max. forward impulse current: 205A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB flat
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 15A
Leakage current: 100mA
Max. forward impulse current: 205A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| Z0107MA 2AL2 |
![]() |
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Mounting: THT
Case: TO92
Gate current: 5mA
Max. load current: 1A
Max. forward impulse current: 8A
Max. off-state voltage: 0.6kV
Kind of package: Ammo Pack
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Mounting: THT
Case: TO92
Gate current: 5mA
Max. load current: 1A
Max. forward impulse current: 8A
Max. off-state voltage: 0.6kV
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| Z0107SN 5AA4 |
![]() |
auf Bestellung 11000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 6000+ | 0.097 EUR |
| M95080-WMN6P |
![]() |
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
auf Bestellung 1122 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 242+ | 0.3 EUR |
| 300+ | 0.28 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.26 EUR |
| M95080-DFMN6TP |
![]() |
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
auf Bestellung 2483 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 140+ | 0.51 EUR |
| 151+ | 0.48 EUR |
| 172+ | 0.42 EUR |
| 250+ | 0.36 EUR |
| 1000+ | 0.34 EUR |
| M95080-RMC6TG |
![]() |
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| M95080-DFDW6TP |
![]() |
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| M95080-DFMC6TG |
![]() |
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| M95080-RDW6TP |
![]() |
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| M95080-RMN6TP |
![]() |
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| M95080-WDW6TP |
![]() |
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 2.5÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 2.5÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| M95080-WMN6TP |
![]() |
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STPS5L40 |
![]() |
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.5V
Max. load current: 15A
Max. forward impulse current: 150A
Leakage current: 75mA
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.5V
Max. load current: 15A
Max. forward impulse current: 150A
Leakage current: 75mA
Kind of package: Ammo Pack
auf Bestellung 1160 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 435+ | 0.16 EUR |
| 575+ | 0.12 EUR |
| STPS3150RL |
![]() |
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 3A; DO201AD; Ufmax: 0.82V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.82V
Max. forward impulse current: 100A
Kind of package: reel
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 3A; DO201AD; Ufmax: 0.82V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.82V
Max. forward impulse current: 100A
Kind of package: reel
auf Bestellung 1496 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 212+ | 0.34 EUR |
| 300+ | 0.24 EUR |
| 500+ | 0.19 EUR |
| 625+ | 0.18 EUR |
| 1000+ | 0.17 EUR |
| PKC-136 |
![]() |
Hersteller: STMicroelectronics
Category: Diodes - others
Description: Diode: TVS+FRD; 700V; DO15; Ammo Pack; 10uA; Ubr: 160V
Type of diode: TVS+FRD
Max. off-state voltage: 700V
Case: DO15
Mounting: THT
Features of semiconductor devices: snubber diode; ultrafast switching
Kind of package: Ammo Pack
Leakage current: 10µA
Breakdown voltage: 160V
Category: Diodes - others
Description: Diode: TVS+FRD; 700V; DO15; Ammo Pack; 10uA; Ubr: 160V
Type of diode: TVS+FRD
Max. off-state voltage: 700V
Case: DO15
Mounting: THT
Features of semiconductor devices: snubber diode; ultrafast switching
Kind of package: Ammo Pack
Leakage current: 10µA
Breakdown voltage: 160V
auf Bestellung 351 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.17 EUR |
| 91+ | 0.79 EUR |
| 128+ | 0.56 EUR |
| 250+ | 0.54 EUR |
| L6981N50DR |
![]() |
Hersteller: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.64 EUR |
| LSM303AHTR |
![]() |
Hersteller: STMicroelectronics
Category: Resistive Magnetic Sensors
Description: Sensor: accelerometer; Interface: SPI; -40÷85°C
Type of sensor: accelerometer
Interface: SPI
Operating temperature: -40...85°C
Category: Resistive Magnetic Sensors
Description: Sensor: accelerometer; Interface: SPI; -40÷85°C
Type of sensor: accelerometer
Interface: SPI
Operating temperature: -40...85°C
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8000+ | 3.98 EUR |
| Z0405MH |
![]() |
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: IPAK
Gate current: 5mA
Max. forward impulse current: 16A
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: IPAK
Gate current: 5mA
Max. forward impulse current: 16A
Mounting: THT
Kind of package: tube
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| 129+ | 0.56 EUR |
| STY60NK30Z |
![]() |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 37.5A; 450W; MAX247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 37.5A
Power dissipation: 450W
Case: MAX247
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 37.5A; 450W; MAX247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 37.5A
Power dissipation: 450W
Case: MAX247
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 35.75 EUR |
| BDX53B |
![]() |
Hersteller: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 8A; 60W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 60W
Case: TO220AB
Mounting: THT
Kind of package: tube
Current gain: 750
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 8A; 60W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 60W
Case: TO220AB
Mounting: THT
Kind of package: tube
Current gain: 750
auf Bestellung 409 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 1.29 EUR |
| 85+ | 0.85 EUR |
| 116+ | 0.62 EUR |
| 132+ | 0.54 EUR |
| 250+ | 0.47 EUR |
| Z0107MA 2AL2 |
![]() |
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 7mA
Type of thyristor: triac
Mounting: THT
Case: TO92
Gate current: 7mA
Max. load current: 1A
Max. off-state voltage: 0.6kV
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 7mA
Type of thyristor: triac
Mounting: THT
Case: TO92
Gate current: 7mA
Max. load current: 1A
Max. off-state voltage: 0.6kV
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 0.09 EUR |
| M24C01-RMN6P |
![]() |
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; I2C; 128x8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: I2C
Memory organisation: 128x8bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Clock frequency: 400kHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; I2C; 128x8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: I2C
Memory organisation: 128x8bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Clock frequency: 400kHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP150N10F7 |
![]() |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Pulsed drain current: 440A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Pulsed drain current: 440A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.77 EUR |
| 29+ | 2.47 EUR |
| STP150N10F7AG |
![]() |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Pulsed drain current: 440A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Pulsed drain current: 440A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP14NK60Z |
![]() |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.5A; 160W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.5A
Case: TO220
On-state resistance: 0.5Ω
Mounting: THT
Power: 160W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.5A; 160W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.5A
Case: TO220
On-state resistance: 0.5Ω
Mounting: THT
Power: 160W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NUCLEO-L4R5ZI |
![]() |
Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; Comp: STM32L4R5ZIT6; Architecture: Cortex M4
Type of development kit: STM32
Components: STM32L4R5ZIT6
Interface: USB
Kind of connector: Morpho plug; pin strips; pin strips; USB B micro
Kind of architecture: Cortex M4
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Kit contents: base board
Category: STM development kits
Description: Dev.kit: STM32; Comp: STM32L4R5ZIT6; Architecture: Cortex M4
Type of development kit: STM32
Components: STM32L4R5ZIT6
Interface: USB
Kind of connector: Morpho plug; pin strips; pin strips; USB B micro
Kind of architecture: Cortex M4
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Kit contents: base board
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STM32F769IGT6 |
![]() |
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP176; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 140
Case: LQFP176
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 512kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 12
Number of 32bit timers: 2
Family: STM32F7
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP176; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 140
Case: LQFP176
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 512kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 12
Number of 32bit timers: 2
Family: STM32F7
Kind of core: 32-bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STM32F412CEU6 |
![]() |
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; UFQFPN48; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 36
Case: UFQFPN48
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; full duplex; I2C x3; SDIO; SPI x5; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 256kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 14
Family: STM32F4
Kind of package: in-tray
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; UFQFPN48; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 36
Case: UFQFPN48
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; full duplex; I2C x3; SDIO; SPI x5; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 256kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 14
Family: STM32F4
Kind of package: in-tray
Kind of core: 32-bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STM32F412CEU6TR |
![]() |
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; UFQFPN48; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 36
Case: UFQFPN48
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; full duplex; I2C x3; SDIO; SPI x5; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 256kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 14
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; UFQFPN48; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 36
Case: UFQFPN48
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; full duplex; I2C x3; SDIO; SPI x5; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 256kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 14
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CR95HF-VMD5T |
![]() |
Hersteller: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: NFC/RFID tag; 2.7÷5.5VDC; SPI,UART; SMD; VFQFPN32; reel,tape
Type of integrated circuit: NFC/RFID tag
Supply voltage: 2.7...5.5V DC
Interface: SPI; UART
Mounting: SMD
Case: VFQFPN32
Operating temperature: -25...85°C
Kind of package: reel; tape
Frequency: 13.56MHz
Category: Interfaces others - integrated circuits
Description: IC: NFC/RFID tag; 2.7÷5.5VDC; SPI,UART; SMD; VFQFPN32; reel,tape
Type of integrated circuit: NFC/RFID tag
Supply voltage: 2.7...5.5V DC
Interface: SPI; UART
Mounting: SMD
Case: VFQFPN32
Operating temperature: -25...85°C
Kind of package: reel; tape
Frequency: 13.56MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STM32L412KBU6 |
![]() |
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; QFN32; 1.71÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: QFN32
Supply voltage: 1.71...3.6V DC
Interface: GPIO; I2C; LPUART; QSPI; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 40kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 1
Family: STM32L4
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; QFN32; 1.71÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: QFN32
Supply voltage: 1.71...3.6V DC
Interface: GPIO; I2C; LPUART; QSPI; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 40kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 1
Family: STM32L4
Kind of core: 32-bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STM32L412KBU6TR |
![]() |
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; QFN32; 1.71÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: QFN32
Supply voltage: 1.71...3.6V DC
Interface: GPIO; I2C; LPUART; QSPI; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 40kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 1
Family: STM32L4
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; QFN32; 1.71÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: QFN32
Supply voltage: 1.71...3.6V DC
Interface: GPIO; I2C; LPUART; QSPI; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 40kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 1
Family: STM32L4
Kind of core: 32-bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZW50-27B |
![]() |
Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 30V; 103A; bidirectional; R6; 5kW; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 27V
Breakdown voltage: 30V
Max. forward impulse current: 103A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 30V; 103A; bidirectional; R6; 5kW; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 27V
Breakdown voltage: 30V
Max. forward impulse current: 103A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.73 EUR |
| 28+ | 2.56 EUR |
| 32+ | 2.27 EUR |
| 33+ | 2.23 EUR |
| SM6T30A |
![]() |
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 4007 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 334+ | 0.21 EUR |
| 350+ | 0.2 EUR |
| 382+ | 0.19 EUR |
| 397+ | 0.18 EUR |
| 500+ | 0.16 EUR |
| 2500+ | 0.15 EUR |
| P6KE30A |
![]() |
Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
auf Bestellung 256 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 180+ | 0.4 EUR |
| 201+ | 0.36 EUR |
| 256+ | 0.29 EUR |
| SM6T30CA | ![]() |
![]() |
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 5747 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 224+ | 0.32 EUR |
| 271+ | 0.26 EUR |
| 313+ | 0.23 EUR |
| 358+ | 0.2 EUR |
| 424+ | 0.17 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| 2500+ | 0.12 EUR |
| SM15T30A |
![]() |
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 1213 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 93+ | 0.78 EUR |
| 100+ | 0.72 EUR |
| 121+ | 0.59 EUR |
| 131+ | 0.55 EUR |
| 250+ | 0.49 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.42 EUR |
| BZW50-27 |
![]() |
Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 30V; 103A; unidirectional; R6; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 27V
Breakdown voltage: 30V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Kind of package: reel; tape
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 30V; 103A; unidirectional; R6; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 27V
Breakdown voltage: 30V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Kind of package: reel; tape
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.7 EUR |
| 30+ | 2.43 EUR |
| 35+ | 2.07 EUR |
| 36+ | 2 EUR |
| SM15T30CA |
![]() |
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 2193 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 80+ | 0.9 EUR |
| 101+ | 0.71 EUR |
| 123+ | 0.58 EUR |
| 135+ | 0.53 EUR |
| 250+ | 0.47 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.4 EUR |
| SM6T30AY |
![]() |
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2278 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 122+ | 0.59 EUR |
| 132+ | 0.54 EUR |
| 164+ | 0.44 EUR |
| 250+ | 0.37 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.26 EUR |
| SM6T30CAY |
![]() |
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2160 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 124+ | 0.58 EUR |
| 138+ | 0.52 EUR |
| 205+ | 0.35 EUR |
| 250+ | 0.3 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.24 EUR |
| BD678 |
![]() |
Hersteller: STMicroelectronics
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
auf Bestellung 920 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 71+ | 1.02 EUR |
| 121+ | 0.59 EUR |
| 154+ | 0.47 EUR |
| 171+ | 0.42 EUR |
| 200+ | 0.38 EUR |
| 500+ | 0.33 EUR |
| STF13N80K5 |
![]() |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.48 EUR |
| 25+ | 2.95 EUR |
| STP13N80K5 |
![]() |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STB13N80K5 |
![]() |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STFU13N80K5 |
![]() |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ST13007DFP |
![]() |
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 36W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 36W
Case: TO220FP
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 36W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 36W
Case: TO220FP
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| L9616-TR |
![]() |
Hersteller: STMicroelectronics
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SO8; -40÷150°C; reel,tape
Operating temperature: -40...150°C
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: SO8
Version: ESD
Type of integrated circuit: interface
Interface: CAN bus
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SO8; -40÷150°C; reel,tape
Operating temperature: -40...150°C
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: SO8
Version: ESD
Type of integrated circuit: interface
Interface: CAN bus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STPS340UF |
![]() |
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB flat
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. load current: 6A
Max. forward impulse current: 75A
Kind of package: reel; tape
Leakage current: 10mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB flat
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. load current: 6A
Max. forward impulse current: 75A
Kind of package: reel; tape
Leakage current: 10mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STPS340UY |
![]() |
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Max. load current: 6A
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Max. load current: 6A
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6KE400ARL |
![]() |
Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS THT diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 6000+ | 0.17 EUR |
| STG719STR |
![]() |
Hersteller: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: analog switch; demultiplexer,multiplexer,SPDT; 1.8÷5.5VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer; SPDT
Case: SOT23-6
Supply voltage: 1.8...5.5V DC
Mounting: SMD
Interface: GPIO
Number of channels: 1
Category: Interfaces others - integrated circuits
Description: IC: analog switch; demultiplexer,multiplexer,SPDT; 1.8÷5.5VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer; SPDT
Case: SOT23-6
Supply voltage: 1.8...5.5V DC
Mounting: SMD
Interface: GPIO
Number of channels: 1
auf Bestellung 2637 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 79+ | 0.92 EUR |
| 113+ | 0.64 EUR |
| 121+ | 0.59 EUR |
| 137+ | 0.52 EUR |
| 250+ | 0.48 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.44 EUR |
| STM32C011F4U3TR |
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller
Type of integrated circuit: STM32 ARM microcontroller
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller
Type of integrated circuit: STM32 ARM microcontroller
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.59 EUR |
| SM15T100CA |
![]() |
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 100V; 11A; bidirectional; SMC; reel,tape
Case: SMC
Semiconductor structure: bidirectional
Mounting: SMD
Type of diode: TVS
Leakage current: 1µA
Max. forward impulse current: 11A
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 100V; 11A; bidirectional; SMC; reel,tape
Case: SMC
Semiconductor structure: bidirectional
Mounting: SMD
Type of diode: TVS
Leakage current: 1µA
Max. forward impulse current: 11A
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
auf Bestellung 1790 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 94+ | 0.77 EUR |
| 103+ | 0.7 EUR |
| 125+ | 0.58 EUR |
| 135+ | 0.53 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.42 EUR |
| SM15T100A |
![]() |
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 100V; 11A; unidirectional; SMC; reel,tape
Case: SMC
Semiconductor structure: unidirectional
Mounting: SMD
Type of diode: TVS
Leakage current: 1µA
Max. forward impulse current: 11A
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 100V; 11A; unidirectional; SMC; reel,tape
Case: SMC
Semiconductor structure: unidirectional
Mounting: SMD
Type of diode: TVS
Leakage current: 1µA
Max. forward impulse current: 11A
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
auf Bestellung 1340 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 58+ | 1.24 EUR |
| 77+ | 0.94 EUR |
| 93+ | 0.77 EUR |
| 102+ | 0.7 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.47 EUR |
| VND5T100AJTR-E |
![]() |
Hersteller: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 22A; PowerSSO12; 8÷36V; reel,tape
Case: PowerSSO12
Mounting: SMD
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
Operating temperature: -40...150°C
On-state resistance: 0.2Ω
Number of channels: 2
Output current: 22A
Supply voltage: 8...36V
Kind of package: reel; tape
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 22A; PowerSSO12; 8÷36V; reel,tape
Case: PowerSSO12
Mounting: SMD
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
Operating temperature: -40...150°C
On-state resistance: 0.2Ω
Number of channels: 2
Output current: 22A
Supply voltage: 8...36V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
























