Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (161988) > Seite 2693 nach 2700
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| STP220N6F7 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 120A; Idm: 480A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 480A Power dissipation: 237W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement Technology: STripFET™ F7 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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SM15T18A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 59.5A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 1583 Stücke: Lieferzeit 14-21 Tag (e) |
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| STPS30H100DJF-TR | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerFLAT 5x6; SMD; 100V; 30A Semiconductor structure: single diode Case: PowerFLAT 5x6 Type of diode: Schottky rectifying Kind of package: reel; tape Mounting: SMD Max. forward voltage: 0.84V Load current: 30A Max. load current: 45A Max. off-state voltage: 100V Max. forward impulse current: 250A |
Produkt ist nicht verfügbar |
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| PD54003-E | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 4A; 25.8W; PowerSO10RF Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 4A Power dissipation: 25.8W Case: PowerSO10RF Gate-source voltage: ±20V Mounting: SMD Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| STB18NM60ND | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.19A Power dissipation: 130W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.29Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 52A |
Produkt ist nicht verfügbar |
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| STP28NM60ND | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 14.5A; Idm: 92A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 14.5A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.15Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 62.5nC Pulsed drain current: 92A |
Produkt ist nicht verfügbar |
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| STL11N3LLH6 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 44A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 11A Pulsed drain current: 44A Power dissipation: 45W Case: PowerFLAT 3.3x3.3 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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STPS10150CFP | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 150V; 5Ax2; TO220FP; Ufmax: 1V Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Max. forward voltage: 1V Load current: 5A x2 Max. load current: 10A Max. off-state voltage: 150V Max. forward impulse current: 120A Semiconductor structure: common cathode; double Case: TO220FP |
auf Bestellung 347 Stücke: Lieferzeit 14-21 Tag (e) |
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STPS10H100CFP | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.85V Type of diode: Schottky rectifying Case: TO220FP Mounting: THT Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.85V Max. forward impulse current: 180A Kind of package: tube Max. load current: 10A |
auf Bestellung 1987 Stücke: Lieferzeit 14-21 Tag (e) |
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STPS10L25D | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 25V; 10A; TO220AC; Ufmax: 0.46V Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Heatsink thickness: 1.23...1.32mm Max. forward voltage: 0.46V Load current: 10A Max. load current: 30A Max. off-state voltage: 25V Max. forward impulse current: 200A Semiconductor structure: single diode Case: TO220AC |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
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| VIPER26HD | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: driver; flyback; SO16; 3A; 800V; Uin: 11.5÷23.5V; 115kHz Type of integrated circuit: driver Topology: flyback Case: SO16 Output current: 3A Output voltage: 800V Mounting: SMD Operating temperature: -40...150°C Frequency: 115kHz Input voltage: 11.5...23.5V |
auf Bestellung 5630 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ40A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 44.4V; 27A; unidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4V Max. forward impulse current: 27A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
auf Bestellung 6133 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ48CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 56.1V; 23A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 48V Breakdown voltage: 56.1V Max. forward impulse current: 23A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Leakage current: 1µA |
auf Bestellung 986 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ43A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 47.8V; 25A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 43V Breakdown voltage: 47.8V Max. forward impulse current: 25A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Leakage current: 1µA |
auf Bestellung 3899 Stücke: Lieferzeit 14-21 Tag (e) |
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TS507ILT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.9MHz; Ch: 1; 2.7÷5.5VDC; SOT23-5; 45nA Type of integrated circuit: operational amplifier Bandwidth: 1.9MHz Number of channels: 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Slew rate: 0.6V/μs Integrated circuit features: precision; rail-to-rail Input offset voltage: 0.75mV Kind of package: reel; tape Input offset current: 45nA |
auf Bestellung 2428 Stücke: Lieferzeit 14-21 Tag (e) |
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TS431IZ-AP | STMicroelectronics |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±2%; TO92; Ammo Pack; 30mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±2% Mounting: THT Case: TO92 Operating temperature: -40...125°C Operating voltage: 1.24...6V Kind of package: Ammo Pack Maximum output current: 30mA |
auf Bestellung 1831 Stücke: Lieferzeit 14-21 Tag (e) |
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TL1431IZ | STMicroelectronics |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.5V; ±0.4%; TO92; bulk; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±0.4% Mounting: THT Case: TO92 Operating temperature: -40...105°C Operating voltage: 2.5...36V Kind of package: bulk Maximum output current: 0.1A |
auf Bestellung 2194 Stücke: Lieferzeit 14-21 Tag (e) |
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TS431IZT | STMicroelectronics |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±2%; TO92; reel,tape; 30mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±2% Mounting: THT Case: TO92 Operating temperature: -40...125°C Operating voltage: 1.24...6V Kind of package: reel; tape Maximum output current: 30mA |
Produkt ist nicht verfügbar |
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| STL4LN80K5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2A Pulsed drain current: 8A Power dissipation: 38W Case: PowerFLAT 5x6 Gate-source voltage: ±30V On-state resistance: 2.6Ω Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| STPS5L60SF | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO277A; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: TO277A Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.52V Max. load current: 15A Leakage current: 100mA Max. forward impulse current: 100A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| STPS5L60SFY | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO277A; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: TO277A Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.51V Max. load current: 15A Leakage current: 150mA Max. forward impulse current: 220A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| STPS5L60SY | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.52V Max. load current: 15A Leakage current: 100mA Max. forward impulse current: 150A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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BUL743 | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 500V; 12A; 100W; TO220AB; 1.23÷1.32mm Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 500V Collector current: 12A Power dissipation: 100W Case: TO220AB Pulsed collector current: 24A Current gain: 24...80 Mounting: THT Kind of package: tube Heatsink thickness: 1.23...1.32mm |
auf Bestellung 977 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE62A | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 62V; 17.7A; unidirectional; DO201; Ammo Pack Type of diode: TVS Max. off-state voltage: 53V Breakdown voltage: 62V Max. forward impulse current: 17.7A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: Ammo Pack |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE6V8CA | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; Ammo Pack Type of diode: TVS Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 143A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1mA Peak pulse power dissipation: 1.5kW Kind of package: Ammo Pack |
auf Bestellung 346 Stücke: Lieferzeit 14-21 Tag (e) |
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| STPS3L60SY | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.94V Max. forward impulse current: 75A Kind of package: reel; tape Application: automotive industry Leakage current: 15mA Max. load current: 10A |
Produkt ist nicht verfügbar |
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STPS3L60QRL | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 3A; DO15; Ufmax: 0.79V; reel Type of diode: Schottky rectifying Case: DO15 Mounting: THT Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.79V Max. forward impulse current: 100A Kind of package: reel Leakage current: 30mA Max. load current: 10A |
Produkt ist nicht verfügbar |
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| STGD25N40LZAG | STMicroelectronics |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 25A; 150W; DPAK; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25A Power dissipation: 150W Case: DPAK Pulsed collector current: 50A Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Features of semiconductor devices: internally clamped; logic level Application: automotive industry; ignition systems Version: ESD |
Produkt ist nicht verfügbar |
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| VL53L5CXV0GC/1 | STMicroelectronics |
Category: UnclassifiedDescription: VL53L5CXV0GC/1 |
auf Bestellung 5898 Stücke: Lieferzeit 14-21 Tag (e) |
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| STEVAL-ILL059V1 | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: evaluation; Comp: STAP16DPS05,STM8A; base board Type of development kit: evaluation Components: STAP16DPS05; STM8A Kind of connector: Jack 3.5mm socket Kind of integrated circuit: LED driver Kit contents: base board Additional functions: DC/DC converter |
Produkt ist nicht verfügbar |
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| STEVAL-ILL060V1 | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: evaluation; Comp: STAP16DPPS05,STM8A; No.of diodes: 32 Type of development kit: evaluation Components: STAP16DPPS05; STM8A Interface: SPI Kind of connector: Jack 3.5mm socket Operating voltage: 6...24V DC Kit contents: base board Additional functions: DC/DC converter Number of diodes: 32 |
Produkt ist nicht verfügbar |
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| STEVAL-ILL061V1 | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: evaluation; Comp: LED1642GW,STM32F103CX; 6÷28VDC Type of development kit: evaluation Components: LED1642GW; STM32F103CX Interface: PWM; SPI Kind of connector: Jack 3.5mm socket; pin strips Operating voltage: 6...28V DC Kit contents: base board Additional functions: DC/DC converter Number of diodes: 16 |
Produkt ist nicht verfügbar |
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| STEVAL-ILL073V1 | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: evaluation; Comp: ALED1642GW,STM8A; 1MHz; 6÷28VDC Type of development kit: evaluation Components: ALED1642GW; STM8A Interface: PWM; SPI; UART Kind of connector: Jack 3.5mm socket; pin strips Frequency: 1MHz Operating voltage: 6...28V DC Kind of integrated circuit: LED driver Kit contents: base board Additional functions: DC/DC converter |
Produkt ist nicht verfügbar |
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| STL10N3LLH5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STL100N4LF8 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 40V; 103A; 52W Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Gate charge: 28nC On-state resistance: 2.7mΩ Drain-source voltage: 40V Power dissipation: 52W Drain current: 103A |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ40CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 46.7V; 9.7A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40V Breakdown voltage: 46.7V Max. forward impulse current: 9.7A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Kind of package: reel; tape |
auf Bestellung 3643 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ15A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 17.6V; 64A; unidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15V Breakdown voltage: 17.6V Max. forward impulse current: 64A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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1N5819 | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V Case: DO41 Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Max. forward voltage: 0.55V Load current: 1A Max. forward impulse current: 25A Max. load current: 10A Max. off-state voltage: 40V Kind of package: Ammo Pack |
auf Bestellung 4108 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGWF30NC60S | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 18A; 79W; TO3PF Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 18A Power dissipation: 79W Case: TO3PF Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 96nC Kind of package: tube |
Produkt ist nicht verfügbar |
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| ST1CC40PUR | STMicroelectronics |
Category: Voltage regulators - DC/DC circuitsDescription: Driver; DC/DC converter; 3A; VFQFPN8; SMD; 850kHz; Topology: buck Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter Output current: 3A Case: VFQFPN8 Mounting: SMD Frequency: 850kHz Topology: buck Number of channels: 1 Operating voltage: 3...18V DC |
Produkt ist nicht verfügbar |
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STPS1545CG-TR | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 7.5A x2 Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.5V Max. load current: 20A Max. forward impulse current: 150A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| STPS1545CR | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 7.5Ax2; I2PAK; Ufmax: 0.84V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 7.5A x2 Semiconductor structure: common cathode; double Case: I2PAK Max. forward voltage: 0.84V Max. load current: 20A Max. forward impulse current: 150A Kind of package: tube Leakage current: 15mA |
Produkt ist nicht verfügbar |
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| STPS1545CGY-TR | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 7.5A x2 Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.84V Max. load current: 20A Max. forward impulse current: 150A Kind of package: reel; tape Application: automotive industry Leakage current: 15mA |
Produkt ist nicht verfügbar |
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T835H-6I | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 8A; TO220ABIns; Igt: 35mA; Ifsm: 84A; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220ABIns Gate current: 35mA Mounting: THT Kind of package: tube Features of semiconductor devices: high temperature Max. forward impulse current: 84A |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
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T835-800B | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 8A; DPAK; Igt: 35mA; Ifsm: 80A Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: DPAK Gate current: 35mA Mounting: SMD Kind of package: tube Max. forward impulse current: 80A |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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| T835H-8T | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 8A; TO220AB; Igt: 35mA; Ifsm: 84A; high temperature Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 35mA Mounting: THT Kind of package: tube Features of semiconductor devices: high temperature Max. forward impulse current: 84A |
Produkt ist nicht verfügbar |
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| T835H-8I | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 8A; TO220ABIns; Igt: 35mA; Ifsm: 84A; high temperature Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220ABIns Gate current: 35mA Mounting: THT Kind of package: tube Features of semiconductor devices: high temperature Max. forward impulse current: 84A |
Produkt ist nicht verfügbar |
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| T835-800B-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 8A; DPAK; Igt: 35mA; Ifsm: 80A Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: DPAK Gate current: 35mA Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 80A |
Produkt ist nicht verfügbar |
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| T835H-6G | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 8A; D2PAK; Igt: 35mA; Ifsm: 84A; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: D2PAK Gate current: 35mA Mounting: SMD Kind of package: tube Features of semiconductor devices: high temperature Max. forward impulse current: 84A |
Produkt ist nicht verfügbar |
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| T835H-6G-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 8A; D2PAK; Igt: 35mA; Ifsm: 84A; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: D2PAK Gate current: 35mA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: high temperature Max. forward impulse current: 84A |
Produkt ist nicht verfügbar |
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| T835H-6T | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 35mA; Ifsm: 84A; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 35mA Mounting: THT Kind of package: tube Features of semiconductor devices: high temperature Max. forward impulse current: 84A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| T835H-8G-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 8A; D2PAK; Igt: 35mA; Ifsm: 84A; high temperature Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: D2PAK Gate current: 35mA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: high temperature Max. forward impulse current: 84A |
Produkt ist nicht verfügbar |
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| STL13N60M6 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STP13N65M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.3A; Idm: 40A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.43Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| STD12N60M2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| LD39130SPUR | STMicroelectronics |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 0.8÷4V; 0.3A; DFN6 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.3V Output voltage: 0.8...4V Output current: 0.3A Case: DFN6 Mounting: SMD Manufacturer series: LD39130S Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 1.4...5.5V Integrated circuit features: GREEN MODE pin; shutdown mode control input |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| LD39020DTPU33R | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; DFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.35V Output voltage: 3.3V Output current: 0.2A Case: DFN4 Mounting: SMD Manufacturer series: LD39020 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 2...3% Number of channels: 1 Input voltage: 1.5...5.5V |
Produkt ist nicht verfügbar |
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|
STW13N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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| M24C64-DFCT6TP/K | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory Type of integrated circuit: EEPROM memory |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| M24C64-DRDW3TP/K | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory Type of integrated circuit: EEPROM memory |
auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STP220N6F7 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 237W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ F7
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 237W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ F7
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SM15T18A |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 1583 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 96+ | 0.75 EUR |
| 104+ | 0.69 EUR |
| 127+ | 0.56 EUR |
| 139+ | 0.52 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.4 EUR |
| STPS30H100DJF-TR |
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Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerFLAT 5x6; SMD; 100V; 30A
Semiconductor structure: single diode
Case: PowerFLAT 5x6
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.84V
Load current: 30A
Max. load current: 45A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerFLAT 5x6; SMD; 100V; 30A
Semiconductor structure: single diode
Case: PowerFLAT 5x6
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.84V
Load current: 30A
Max. load current: 45A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PD54003-E |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 4A; 25.8W; PowerSO10RF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 4A
Power dissipation: 25.8W
Case: PowerSO10RF
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 4A; 25.8W; PowerSO10RF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 4A
Power dissipation: 25.8W
Case: PowerSO10RF
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STB18NM60ND |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 52A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 52A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP28NM60ND |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 14.5A; Idm: 92A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14.5A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 62.5nC
Pulsed drain current: 92A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 14.5A; Idm: 92A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14.5A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 62.5nC
Pulsed drain current: 92A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STL11N3LLH6 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 44A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 45W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 44A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 45W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STPS10150CFP |
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Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 5Ax2; TO220FP; Ufmax: 1V
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 1V
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 150V
Max. forward impulse current: 120A
Semiconductor structure: common cathode; double
Case: TO220FP
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 5Ax2; TO220FP; Ufmax: 1V
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 1V
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 150V
Max. forward impulse current: 120A
Semiconductor structure: common cathode; double
Case: TO220FP
auf Bestellung 347 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 66+ | 1.09 EUR |
| 184+ | 0.39 EUR |
| STPS10H100CFP |
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Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.85V
Type of diode: Schottky rectifying
Case: TO220FP
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. forward impulse current: 180A
Kind of package: tube
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.85V
Type of diode: Schottky rectifying
Case: TO220FP
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. forward impulse current: 180A
Kind of package: tube
Max. load current: 10A
auf Bestellung 1987 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 164+ | 0.44 EUR |
| 205+ | 0.35 EUR |
| STPS10L25D |
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Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 10A; TO220AC; Ufmax: 0.46V
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.46V
Load current: 10A
Max. load current: 30A
Max. off-state voltage: 25V
Max. forward impulse current: 200A
Semiconductor structure: single diode
Case: TO220AC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 10A; TO220AC; Ufmax: 0.46V
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.46V
Load current: 10A
Max. load current: 30A
Max. off-state voltage: 25V
Max. forward impulse current: 200A
Semiconductor structure: single diode
Case: TO220AC
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 137+ | 0.52 EUR |
| 143+ | 0.5 EUR |
| VIPER26HD |
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Hersteller: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; SO16; 3A; 800V; Uin: 11.5÷23.5V; 115kHz
Type of integrated circuit: driver
Topology: flyback
Case: SO16
Output current: 3A
Output voltage: 800V
Mounting: SMD
Operating temperature: -40...150°C
Frequency: 115kHz
Input voltage: 11.5...23.5V
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; SO16; 3A; 800V; Uin: 11.5÷23.5V; 115kHz
Type of integrated circuit: driver
Topology: flyback
Case: SO16
Output current: 3A
Output voltage: 800V
Mounting: SMD
Operating temperature: -40...150°C
Frequency: 115kHz
Input voltage: 11.5...23.5V
auf Bestellung 5630 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 1.03 EUR |
| SMAJ40A-TR |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4V; 27A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4V; 27A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
auf Bestellung 6133 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| SMAJ48CA-TR |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.1V; 23A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 23A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.1V; 23A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 23A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
auf Bestellung 986 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 202+ | 0.35 EUR |
| 228+ | 0.31 EUR |
| 332+ | 0.22 EUR |
| 348+ | 0.21 EUR |
| 428+ | 0.17 EUR |
| 500+ | 0.15 EUR |
| SMAJ43A-TR |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 47.8V; 25A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 47.8V; 25A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
auf Bestellung 3899 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 264+ | 0.27 EUR |
| 382+ | 0.19 EUR |
| 451+ | 0.16 EUR |
| 511+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| TS507ILT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.9MHz; Ch: 1; 2.7÷5.5VDC; SOT23-5; 45nA
Type of integrated circuit: operational amplifier
Bandwidth: 1.9MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Integrated circuit features: precision; rail-to-rail
Input offset voltage: 0.75mV
Kind of package: reel; tape
Input offset current: 45nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.9MHz; Ch: 1; 2.7÷5.5VDC; SOT23-5; 45nA
Type of integrated circuit: operational amplifier
Bandwidth: 1.9MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Integrated circuit features: precision; rail-to-rail
Input offset voltage: 0.75mV
Kind of package: reel; tape
Input offset current: 45nA
auf Bestellung 2428 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 129+ | 0.56 EUR |
| 136+ | 0.53 EUR |
| 145+ | 0.5 EUR |
| 250+ | 0.48 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.46 EUR |
| TS431IZ-AP |
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Hersteller: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±2%; TO92; Ammo Pack; 30mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±2%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 1.24...6V
Kind of package: Ammo Pack
Maximum output current: 30mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±2%; TO92; Ammo Pack; 30mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±2%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 1.24...6V
Kind of package: Ammo Pack
Maximum output current: 30mA
auf Bestellung 1831 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 195+ | 0.37 EUR |
| 208+ | 0.34 EUR |
| 236+ | 0.3 EUR |
| 268+ | 0.27 EUR |
| 1000+ | 0.26 EUR |
| TL1431IZ |
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Hersteller: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.4%; TO92; bulk; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: -40...105°C
Operating voltage: 2.5...36V
Kind of package: bulk
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.4%; TO92; bulk; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: -40...105°C
Operating voltage: 2.5...36V
Kind of package: bulk
Maximum output current: 0.1A
auf Bestellung 2194 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 107+ | 0.67 EUR |
| 119+ | 0.6 EUR |
| 135+ | 0.53 EUR |
| 250+ | 0.5 EUR |
| 500+ | 0.48 EUR |
| TS431IZT |
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Hersteller: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±2%; TO92; reel,tape; 30mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±2%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 1.24...6V
Kind of package: reel; tape
Maximum output current: 30mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±2%; TO92; reel,tape; 30mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±2%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 1.24...6V
Kind of package: reel; tape
Maximum output current: 30mA
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| STL4LN80K5 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 38W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 2.6Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 38W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 2.6Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STPS5L60SF |
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Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 15A
Leakage current: 100mA
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 15A
Leakage current: 100mA
Max. forward impulse current: 100A
Kind of package: reel; tape
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| STPS5L60SFY |
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Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. load current: 15A
Leakage current: 150mA
Max. forward impulse current: 220A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. load current: 15A
Leakage current: 150mA
Max. forward impulse current: 220A
Kind of package: reel; tape
Application: automotive industry
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| STPS5L60SY |
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Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 15A
Leakage current: 100mA
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 15A
Leakage current: 100mA
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
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| BUL743 |
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Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 500V; 12A; 100W; TO220AB; 1.23÷1.32mm
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 12A
Power dissipation: 100W
Case: TO220AB
Pulsed collector current: 24A
Current gain: 24...80
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 500V; 12A; 100W; TO220AB; 1.23÷1.32mm
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 12A
Power dissipation: 100W
Case: TO220AB
Pulsed collector current: 24A
Current gain: 24...80
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
auf Bestellung 977 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.55 EUR |
| 48+ | 1.5 EUR |
| 52+ | 1.39 EUR |
| 100+ | 1.24 EUR |
| 250+ | 1.14 EUR |
| 500+ | 1.13 EUR |
| 1.5KE62A |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 62V; 17.7A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 17.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 62V; 17.7A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 17.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 43+ | 1.66 EUR |
| 1.5KE6V8CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
auf Bestellung 346 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 165+ | 0.43 EUR |
| 250+ | 0.4 EUR |
| STPS3L60SY |
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Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.94V
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 15mA
Max. load current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.94V
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 15mA
Max. load current: 10A
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| STPS3L60QRL |
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Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO15; Ufmax: 0.79V; reel
Type of diode: Schottky rectifying
Case: DO15
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 100A
Kind of package: reel
Leakage current: 30mA
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO15; Ufmax: 0.79V; reel
Type of diode: Schottky rectifying
Case: DO15
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 100A
Kind of package: reel
Leakage current: 30mA
Max. load current: 10A
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| STGD25N40LZAG |
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Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; DPAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Application: automotive industry; ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; DPAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Application: automotive industry; ignition systems
Version: ESD
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| VL53L5CXV0GC/1 |
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auf Bestellung 5898 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3600+ | 7.75 EUR |
| STEVAL-ILL059V1 |
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Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STAP16DPS05,STM8A; base board
Type of development kit: evaluation
Components: STAP16DPS05; STM8A
Kind of connector: Jack 3.5mm socket
Kind of integrated circuit: LED driver
Kit contents: base board
Additional functions: DC/DC converter
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STAP16DPS05,STM8A; base board
Type of development kit: evaluation
Components: STAP16DPS05; STM8A
Kind of connector: Jack 3.5mm socket
Kind of integrated circuit: LED driver
Kit contents: base board
Additional functions: DC/DC converter
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| STEVAL-ILL060V1 |
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Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STAP16DPPS05,STM8A; No.of diodes: 32
Type of development kit: evaluation
Components: STAP16DPPS05; STM8A
Interface: SPI
Kind of connector: Jack 3.5mm socket
Operating voltage: 6...24V DC
Kit contents: base board
Additional functions: DC/DC converter
Number of diodes: 32
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STAP16DPPS05,STM8A; No.of diodes: 32
Type of development kit: evaluation
Components: STAP16DPPS05; STM8A
Interface: SPI
Kind of connector: Jack 3.5mm socket
Operating voltage: 6...24V DC
Kit contents: base board
Additional functions: DC/DC converter
Number of diodes: 32
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| STEVAL-ILL061V1 |
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Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: LED1642GW,STM32F103CX; 6÷28VDC
Type of development kit: evaluation
Components: LED1642GW; STM32F103CX
Interface: PWM; SPI
Kind of connector: Jack 3.5mm socket; pin strips
Operating voltage: 6...28V DC
Kit contents: base board
Additional functions: DC/DC converter
Number of diodes: 16
Category: STM development kits
Description: Dev.kit: evaluation; Comp: LED1642GW,STM32F103CX; 6÷28VDC
Type of development kit: evaluation
Components: LED1642GW; STM32F103CX
Interface: PWM; SPI
Kind of connector: Jack 3.5mm socket; pin strips
Operating voltage: 6...28V DC
Kit contents: base board
Additional functions: DC/DC converter
Number of diodes: 16
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| STEVAL-ILL073V1 |
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Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: ALED1642GW,STM8A; 1MHz; 6÷28VDC
Type of development kit: evaluation
Components: ALED1642GW; STM8A
Interface: PWM; SPI; UART
Kind of connector: Jack 3.5mm socket; pin strips
Frequency: 1MHz
Operating voltage: 6...28V DC
Kind of integrated circuit: LED driver
Kit contents: base board
Additional functions: DC/DC converter
Category: STM development kits
Description: Dev.kit: evaluation; Comp: ALED1642GW,STM8A; 1MHz; 6÷28VDC
Type of development kit: evaluation
Components: ALED1642GW; STM8A
Interface: PWM; SPI; UART
Kind of connector: Jack 3.5mm socket; pin strips
Frequency: 1MHz
Operating voltage: 6...28V DC
Kind of integrated circuit: LED driver
Kit contents: base board
Additional functions: DC/DC converter
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| STL10N3LLH5 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.64 EUR |
| STL100N4LF8 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 103A; 52W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 28nC
On-state resistance: 2.7mΩ
Drain-source voltage: 40V
Power dissipation: 52W
Drain current: 103A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 103A; 52W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 28nC
On-state resistance: 2.7mΩ
Drain-source voltage: 40V
Power dissipation: 52W
Drain current: 103A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.61 EUR |
| SMBJ40CA-TR |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 46.7V; 9.7A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 46.7V
Max. forward impulse current: 9.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 46.7V; 9.7A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 46.7V
Max. forward impulse current: 9.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
auf Bestellung 3643 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 239+ | 0.3 EUR |
| 269+ | 0.27 EUR |
| 368+ | 0.19 EUR |
| 424+ | 0.17 EUR |
| 582+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| 1300+ | 0.1 EUR |
| 2500+ | 0.09 EUR |
| SMCJ15A-TR |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.6V; 64A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.6V; 64A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
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| 1N5819 |
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Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.55V
Load current: 1A
Max. forward impulse current: 25A
Max. load current: 10A
Max. off-state voltage: 40V
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.55V
Load current: 1A
Max. forward impulse current: 25A
Max. load current: 10A
Max. off-state voltage: 40V
Kind of package: Ammo Pack
auf Bestellung 4108 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 642+ | 0.11 EUR |
| 782+ | 0.092 EUR |
| 838+ | 0.085 EUR |
| 1009+ | 0.071 EUR |
| 1104+ | 0.065 EUR |
| 2000+ | 0.059 EUR |
| 4000+ | 0.052 EUR |
| STGWF30NC60S |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 79W; TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 18A
Power dissipation: 79W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 79W; TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 18A
Power dissipation: 79W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 96nC
Kind of package: tube
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| ST1CC40PUR |
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Hersteller: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; 3A; VFQFPN8; SMD; 850kHz; Topology: buck
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Output current: 3A
Case: VFQFPN8
Mounting: SMD
Frequency: 850kHz
Topology: buck
Number of channels: 1
Operating voltage: 3...18V DC
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; 3A; VFQFPN8; SMD; 850kHz; Topology: buck
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Output current: 3A
Case: VFQFPN8
Mounting: SMD
Frequency: 850kHz
Topology: buck
Number of channels: 1
Operating voltage: 3...18V DC
Produkt ist nicht verfügbar
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| STPS1545CG-TR |
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Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.5V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.5V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: reel; tape
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| STPS1545CR |
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Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5Ax2; I2PAK; Ufmax: 0.84V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.84V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Leakage current: 15mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5Ax2; I2PAK; Ufmax: 0.84V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.84V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Leakage current: 15mA
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| STPS1545CGY-TR |
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Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.84V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 15mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.84V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 15mA
Produkt ist nicht verfügbar
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| T835H-6I |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; TO220ABIns; Igt: 35mA; Ifsm: 84A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220ABIns
Gate current: 35mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Max. forward impulse current: 84A
Category: Triacs
Description: Triac; 600V; 8A; TO220ABIns; Igt: 35mA; Ifsm: 84A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220ABIns
Gate current: 35mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Max. forward impulse current: 84A
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 67+ | 1.07 EUR |
| T835-800B |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 35mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 35mA
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 80A
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 35mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 35mA
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 80A
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.44 EUR |
| 72+ | 1.01 EUR |
| 84+ | 0.86 EUR |
| 100+ | 0.72 EUR |
| 150+ | 0.64 EUR |
| T835H-8T |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35mA; Ifsm: 84A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Max. forward impulse current: 84A
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35mA; Ifsm: 84A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Max. forward impulse current: 84A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| T835H-8I |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 8A; TO220ABIns; Igt: 35mA; Ifsm: 84A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220ABIns
Gate current: 35mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Max. forward impulse current: 84A
Category: Triacs
Description: Triac; 800V; 8A; TO220ABIns; Igt: 35mA; Ifsm: 84A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220ABIns
Gate current: 35mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Max. forward impulse current: 84A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| T835-800B-TR |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 35mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 80A
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 35mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 80A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| T835H-6G |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 35mA; Ifsm: 84A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high temperature
Max. forward impulse current: 84A
Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 35mA; Ifsm: 84A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high temperature
Max. forward impulse current: 84A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| T835H-6G-TR |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 35mA; Ifsm: 84A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Max. forward impulse current: 84A
Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 35mA; Ifsm: 84A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Max. forward impulse current: 84A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| T835H-6T |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35mA; Ifsm: 84A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Max. forward impulse current: 84A
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35mA; Ifsm: 84A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Max. forward impulse current: 84A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| T835H-8G-TR |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 35mA; Ifsm: 84A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Max. forward impulse current: 84A
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 35mA; Ifsm: 84A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Max. forward impulse current: 84A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STL13N60M6 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 1.12 EUR |
| STP13N65M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.3A; Idm: 40A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.3A; Idm: 40A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STD12N60M2 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.74 EUR |
| LD39130SPUR |
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Hersteller: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷4V; 0.3A; DFN6
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.3V
Output voltage: 0.8...4V
Output current: 0.3A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39130S
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 1.4...5.5V
Integrated circuit features: GREEN MODE pin; shutdown mode control input
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷4V; 0.3A; DFN6
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.3V
Output voltage: 0.8...4V
Output current: 0.3A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39130S
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 1.4...5.5V
Integrated circuit features: GREEN MODE pin; shutdown mode control input
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LD39020DTPU33R |
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Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; DFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.2A
Case: DFN4
Mounting: SMD
Manufacturer series: LD39020
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 1.5...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; DFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.2A
Case: DFN4
Mounting: SMD
Manufacturer series: LD39020
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 1.5...5.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STW13N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.88 EUR |
| 18+ | 4.1 EUR |
| M24C64-DFCT6TP/K |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory
Type of integrated circuit: EEPROM memory
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory
Type of integrated circuit: EEPROM memory
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.3 EUR |
| M24C64-DRDW3TP/K |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory
Type of integrated circuit: EEPROM memory
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory
Type of integrated circuit: EEPROM memory
auf Bestellung 36000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.61 EUR |
















