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TSV912IQ2T STMicroelectronics tsv912.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; DFN8 2x2; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: DFN8 2x2
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Produkt ist nicht verfügbar
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TSV912IST STMicroelectronics tsv912.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; miniSO8; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: miniSO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Produkt ist nicht verfügbar
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TSV912IYDT TSV912IYDT STMicroelectronics tsv912.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; SO8; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Application: automotive industry
Produkt ist nicht verfügbar
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TSV912IYST TSV912IYST STMicroelectronics tsv912.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; MSOP8; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Application: automotive industry
Produkt ist nicht verfügbar
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ESDA6V1-5SC6Y ESDA6V1-5SC6Y STMicroelectronics en.DM00342426.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 7A; 80W; unidirectional; SOT23-6; Ch: 5; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Max. forward impulse current: 7A
Peak pulse power dissipation: 80W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5.2V
Leakage current: 1mA
Number of channels: 5
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Produkt ist nicht verfügbar
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SMBJ130A-TR SMBJ130A-TR STMicroelectronics SMBJ-st.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 152V; 3A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 130V
Breakdown voltage: 152V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 686 Stücke:
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109+0.66 EUR
133+0.54 EUR
149+0.48 EUR
192+0.37 EUR
250+0.34 EUR
500+0.3 EUR
Mindestbestellmenge: 109
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SMBJ170CA-TR SMBJ170CA-TR STMicroelectronics SMBJ-st.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 199V; 2.2A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 199V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 1788 Stücke:
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179+0.4 EUR
236+0.3 EUR
274+0.26 EUR
341+0.21 EUR
350+0.2 EUR
382+0.19 EUR
500+0.17 EUR
1300+0.16 EUR
Mindestbestellmenge: 179
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SMBJ13CA-TR SMBJ13CA-TR STMicroelectronics SMBJ-st.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.2V; 29A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.2V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 908 Stücke:
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173+0.41 EUR
236+0.3 EUR
268+0.27 EUR
309+0.23 EUR
365+0.2 EUR
374+0.19 EUR
394+0.18 EUR
500+0.17 EUR
Mindestbestellmenge: 173
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SMBJ10A-TR SMBJ10A-TR STMicroelectronics SMBJ-st.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 11.7V; 37A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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209+0.34 EUR
253+0.28 EUR
274+0.26 EUR
338+0.21 EUR
374+0.19 EUR
435+0.16 EUR
506+0.14 EUR
1000+0.12 EUR
1300+0.11 EUR
Mindestbestellmenge: 209
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SMBJ26CA-TR SMBJ26CA-TR STMicroelectronics SMBJ12CA-TR.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30.4V; 14.9A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30.4V
Max. forward impulse current: 14.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 1556 Stücke:
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152+0.47 EUR
186+0.39 EUR
209+0.34 EUR
269+0.27 EUR
293+0.24 EUR
500+0.21 EUR
1000+0.16 EUR
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STEVAL-POE003V1 STMicroelectronics STEVAL-POE003V1.pdf Category: STM development kits
Description: Dev.kit: evaluation; prototype board; Comp: PM8804,PM8805; 20A
Interface: Ethernet
Kind of connector: power supply; RJ45 x2
Components: PM8804; PM8805
Additional functions: Power over Ethernet (PoE)
Kit contents: prototype board
Output voltage 3: 5V DC
Output current: 20A
Type of development kit: evaluation
Produkt ist nicht verfügbar
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STPS20L60CGY-TR STMicroelectronics STPS20L60C-Y.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.74V
Max. load current: 30A
Leakage current: 95mA
Max. forward impulse current: 220A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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1N5817 1N5817 STMicroelectronics 1N5819RL.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
auf Bestellung 225 Stücke:
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225+0.31 EUR
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SMAJ28CA-TR SMAJ28CA-TR STMicroelectronics SMAJxxX_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1V; 39A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Kind of package: reel; tape
auf Bestellung 2056 Stücke:
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250+0.29 EUR
345+0.21 EUR
388+0.18 EUR
463+0.15 EUR
527+0.14 EUR
610+0.12 EUR
676+0.11 EUR
1000+0.096 EUR
Mindestbestellmenge: 250
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P6KE10A P6KE10A STMicroelectronics P6KE6V8A.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 10V; 41A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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STM32F051K8U7TR STMicroelectronics en.DM00039193.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; UFQFPN32; 2÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: HDMI CEC; I2C; SPI; USART x2
Kind of architecture: Cortex M0
Memory: 8kB SRAM; 64kB FLASH
Number of 16bit timers: 7
Number of 32bit timers: 1
Family: STM32F0
Kind of core: 32-bit
Number of 12bit D/A converters: 1
Number of 12bit A/D converters: 13
Operating temperature: -40...105°C
Integrated circuit features: CRC; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMCJ6.0A-TR SMCJ6.0A-TR STMicroelectronics SMCJ33CA-TR.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 7.05V; 152A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 7.05V
Max. forward impulse current: 152A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SMCJ
Kind of package: reel; tape
Produkt ist nicht verfügbar
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STPS1L60ZF STPS1L60ZF STMicroelectronics en.CD00002285.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. load current: 10A
Max. forward impulse current: 60A
Kind of package: reel; tape
Leakage current: 21mA
auf Bestellung 669 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
298+0.24 EUR
451+0.16 EUR
538+0.13 EUR
669+0.11 EUR
Mindestbestellmenge: 200
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STPS1L60ZFY STPS1L60ZFY STMicroelectronics stps1l60-y.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. load current: 10A
Max. forward impulse current: 60A
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1574 Stücke:
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200+0.36 EUR
253+0.28 EUR
281+0.25 EUR
327+0.22 EUR
368+0.19 EUR
421+0.17 EUR
455+0.16 EUR
Mindestbestellmenge: 200
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STL10N60M6 STMicroelectronics stl10n60m6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 48W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.5A
Power dissipation: 48W
Case: PowerFLAT 5x6
On-state resistance: 0.66Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 8.8nC
Produkt ist nicht verfügbar
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STH180N10F3-2 STMicroelectronics en.DM00034472.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 17000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+2.02 EUR
Mindestbestellmenge: 1000
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STPS3L45AF STMicroelectronics en.DM00089408.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 45V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Leakage current: 135mA
Max. forward impulse current: 75A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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STM32L073V8T6 STM32L073V8T6 STMicroelectronics STM32L073CBT6.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP100; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 84
Case: LQFP100
Supply voltage: 1.8...3.6V DC
Interface: I2C; IrDA; LIN; SPI; UART; USART; USB
Kind of architecture: Cortex M0+
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: STM32L0
Kind of core: 32-bit
Produkt ist nicht verfügbar
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STM32F411RCT7 STMicroelectronics en.DM00115249.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller
Type of integrated circuit: STM32 ARM microcontroller
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
160+4.83 EUR
Mindestbestellmenge: 160
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STTH1002CR STTH1002CR STMicroelectronics en.CD00005113.pdf Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
177+0.4 EUR
191+0.37 EUR
200+0.36 EUR
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STTH1002CB-TR STTH1002CB-TR STMicroelectronics STTH1002CB-TR.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 20ns; DPAK; Ufmax: 0.78V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: DPAK
Max. forward voltage: 0.78V
Reverse recovery time: 20ns
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STD110N8F6 STMicroelectronics en.DM00151073.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 167W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 167W
Case: DPAK; TO252
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 150nC
Kind of channel: enhancement
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ESDALC6V1P6 ESDALC6V1P6 STMicroelectronics esdalc6v1px.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 30W; SOT666IP; Ch: 4; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
Semiconductor structure: common anode; quadruple; unidirectional
Mounting: SMD
Case: SOT666IP
Max. off-state voltage: 3V
Number of channels: 4
Version: ESD
Leakage current: 0.1µA
auf Bestellung 2730 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
233+0.31 EUR
252+0.28 EUR
348+0.21 EUR
365+0.2 EUR
443+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 167
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ESDA14V2BP6 ESDA14V2BP6 STMicroelectronics esdaxxxp6.pdf description Category: Protection diodes - arrays
Description: Diode: TVS array; 14.2V; 50W; SOT666; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 14.2V
Peak pulse power dissipation: 50W
Semiconductor structure: bidirectional; common anode; quadruple
Mounting: SMD
Case: SOT666
Max. off-state voltage: 12V
Number of channels: 4
Version: ESD
Kind of package: reel; tape
Leakage current: 1µA
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
199+0.36 EUR
305+0.23 EUR
360+0.2 EUR
500+0.18 EUR
Mindestbestellmenge: 132
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SCTH35N65G2V-7 STMicroelectronics scth35n65g2v-7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 208W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 208W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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SCTH35N65G2V-7AG STMicroelectronics scth35n65g2v-7ag.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 208W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 208W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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TSV992IDT TSV992IDT STMicroelectronics tsv992.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 20MHz; Ch: 2; 2.5÷5.5VDC; SO8; 7.5mV
Type of integrated circuit: operational amplifier
Case: SO8
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset current: 0.1nA
Input bias current: 0.1nA
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Number of channels: 2
Voltage supply range: 2.5...5.5V DC
Slew rate: 10V/μs
Bandwidth: 20MHz
auf Bestellung 2489 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.57 EUR
54+1.33 EUR
61+1.19 EUR
69+1.04 EUR
100+0.9 EUR
Mindestbestellmenge: 46
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TSV994IPT TSV994IPT STMicroelectronics tsv994.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 20MHz; Ch: 4; 2.5÷5.5VDC; TSSOP14; 7.5mV
Type of integrated circuit: operational amplifier
Case: TSSOP14
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset current: 0.1nA
Input bias current: 0.1nA
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Number of channels: 4
Voltage supply range: 2.5...5.5V DC
Slew rate: 10V/μs
Bandwidth: 20MHz
auf Bestellung 2335 Stücke:
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44+1.64 EUR
50+1.46 EUR
55+1.32 EUR
59+1.23 EUR
Mindestbestellmenge: 44
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STP35N60DM2 STP35N60DM2 STMicroelectronics STP35N60DM2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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STB35N60DM2 STMicroelectronics STB35N60DM2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+3.75 EUR
Mindestbestellmenge: 1000
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Z0103MA 2AL2 STMicroelectronics en.CD00002268.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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Z0103MN 6AA4 STMicroelectronics en.CD00002268.pdf Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Produkt ist nicht verfügbar
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Z0103NA 2AL2 STMicroelectronics en.CD00002268.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 3mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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STD13NM60ND STMicroelectronics STx13NM60ND_DS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
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M95512-RMN6TP M95512-RMN6TP STMicroelectronics M95512-RDW6TP.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
auf Bestellung 1138 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
250+0.72 EUR
500+0.69 EUR
1000+0.64 EUR
Mindestbestellmenge: 91
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M95512-RDW6TP M95512-RDW6TP STMicroelectronics M95512-RDW6TP.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
auf Bestellung 1019 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
83+0.87 EUR
100+0.79 EUR
500+0.73 EUR
Mindestbestellmenge: 77
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M95512-RMN6P M95512-RMN6P STMicroelectronics m24512-df.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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TS912AIDT TS912AIDT STMicroelectronics TS912IDT.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 4837 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.34 EUR
63+1.14 EUR
70+1.03 EUR
80+0.9 EUR
85+0.84 EUR
100+0.79 EUR
250+0.73 EUR
2500+0.7 EUR
Mindestbestellmenge: 54
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TS912IDT TS912IDT STMicroelectronics TS912IDT.pdf description Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 3889 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.4 EUR
62+1.17 EUR
68+1.06 EUR
77+0.93 EUR
84+0.86 EUR
100+0.81 EUR
250+0.76 EUR
2500+0.69 EUR
Mindestbestellmenge: 52
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TS912BIDT TS912BIDT STMicroelectronics ts912b.pdf description Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 2mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 1502 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.47 EUR
57+1.26 EUR
63+1.14 EUR
70+1.03 EUR
77+0.93 EUR
100+0.92 EUR
250+0.87 EUR
Mindestbestellmenge: 49
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TS912ID TS912ID STMicroelectronics TS912IDT.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: tube
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 1207 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.06 EUR
42+1.72 EUR
46+1.56 EUR
47+1.53 EUR
Mindestbestellmenge: 35
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TS912IYDT TS912IYDT STMicroelectronics ts912.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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TS912AIYDT TS912AIYDT STMicroelectronics ts912a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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TS912BIYDT TS912BIYDT STMicroelectronics ts912b.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷16VDC; SO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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LET9120 STMicroelectronics LET9120.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 80V; 18A; 200W; M246; Pout: 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 18A
Power dissipation: 200W
Case: M246
Kind of package: bulk
Kind of channel: enhancement
Kind of transistor: RF
Mechanical mounting: screw
Open-loop gain: 18dB
Efficiency: 70%
Output power: 150W
Frequency: 860MHz
Electrical mounting: FASTON connectors; soldering; THT
Produkt ist nicht verfügbar
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BD243C BD243C STMicroelectronics BD244C-STMicroelectronics.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 115V
Collector current: 6A
Case: TO220
Mounting: THT
Frequency: 3MHz
Power: 65W
Produkt ist nicht verfügbar
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BD677A BD677A STMicroelectronics BD678.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
auf Bestellung 845 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
131+0.55 EUR
167+0.43 EUR
185+0.39 EUR
250+0.34 EUR
500+0.31 EUR
Mindestbestellmenge: 77
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M24C02-FMN6TP STMicroelectronics m24c01-r.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN5
Kind of interface: serial
Operating temperature: -40...85°C
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STSPIN220 STSPIN220 STMicroelectronics stspin220.pdf Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; VFQFPN16; 1.3A; 1.8÷10VDC
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Case: VFQFPN16
Output current: 1.3A
Mounting: SMD
On-state resistance: 0.4Ω
Operating temperature: -40...150°C
Operating voltage: 1.8...10V DC
Kind of package: in-tray
auf Bestellung 843 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.83 EUR
28+2.57 EUR
30+2.4 EUR
100+2.16 EUR
500+1.89 EUR
Mindestbestellmenge: 26
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FERD30H60CTS FERD30H60CTS STMicroelectronics FERD30H60C.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 15Ax2; tube; Ifsm: 250A; TO220AB; 500ns
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 0.5µs
Heatsink thickness: 0.51...0.6mm
Max. forward voltage: 0.41V
Load current: 15A x2
Max. load current: 60A
Max. off-state voltage: 60V
Max. forward impulse current: 250A
Produkt ist nicht verfügbar
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FERD30M45CT FERD30M45CT STMicroelectronics FERD30M45C.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 15Ax2; tube; Ifsm: 250A; TO220AB
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.35V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 45V
Max. forward impulse current: 250A
Produkt ist nicht verfügbar
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FERD30SM100ST FERD30SM100ST STMicroelectronics FERD30SM100ST.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 30A; tube; Ifsm: 250A; TO220AB
Semiconductor structure: single diode
Case: TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.39V
Load current: 30A
Max. load current: 60A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
Produkt ist nicht verfügbar
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STPS10H100CT STPS10H100CT STMicroelectronics STPS10H100CT%2CCG%2CCR%2CCFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. forward impulse current: 180A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. load current: 10A
Produkt ist nicht verfügbar
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STPS10H100SFY STMicroelectronics stps10h100sfy.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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STL15N65M5 STMicroelectronics stl15n65m5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 52W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 52W
Case: PowerFLAT 5x6
On-state resistance: 375mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSV912IQ2T tsv912.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; DFN8 2x2; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: DFN8 2x2
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Produkt ist nicht verfügbar
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TSV912IST tsv912.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; miniSO8; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: miniSO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Produkt ist nicht verfügbar
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TSV912IYDT tsv912.pdf
TSV912IYDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; SO8; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Application: automotive industry
Produkt ist nicht verfügbar
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TSV912IYST tsv912.pdf
TSV912IYST
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; MSOP8; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Application: automotive industry
Produkt ist nicht verfügbar
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ESDA6V1-5SC6Y en.DM00342426.pdf
ESDA6V1-5SC6Y
Hersteller: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 7A; 80W; unidirectional; SOT23-6; Ch: 5; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Max. forward impulse current: 7A
Peak pulse power dissipation: 80W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5.2V
Leakage current: 1mA
Number of channels: 5
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Produkt ist nicht verfügbar
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SMBJ130A-TR SMBJ-st.pdf
SMBJ130A-TR
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 152V; 3A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 130V
Breakdown voltage: 152V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 686 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
133+0.54 EUR
149+0.48 EUR
192+0.37 EUR
250+0.34 EUR
500+0.3 EUR
Mindestbestellmenge: 109
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SMBJ170CA-TR SMBJ-st.pdf
SMBJ170CA-TR
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 199V; 2.2A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 199V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 1788 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
236+0.3 EUR
274+0.26 EUR
341+0.21 EUR
350+0.2 EUR
382+0.19 EUR
500+0.17 EUR
1300+0.16 EUR
Mindestbestellmenge: 179
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SMBJ13CA-TR SMBJ-st.pdf
SMBJ13CA-TR
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.2V; 29A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.2V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 908 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
236+0.3 EUR
268+0.27 EUR
309+0.23 EUR
365+0.2 EUR
374+0.19 EUR
394+0.18 EUR
500+0.17 EUR
Mindestbestellmenge: 173
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SMBJ10A-TR SMBJ-st.pdf
SMBJ10A-TR
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 11.7V; 37A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 2230 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
253+0.28 EUR
274+0.26 EUR
338+0.21 EUR
374+0.19 EUR
435+0.16 EUR
506+0.14 EUR
1000+0.12 EUR
1300+0.11 EUR
Mindestbestellmenge: 209
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SMBJ26CA-TR SMBJ12CA-TR.pdf
SMBJ26CA-TR
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30.4V; 14.9A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30.4V
Max. forward impulse current: 14.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 1556 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
186+0.39 EUR
209+0.34 EUR
269+0.27 EUR
293+0.24 EUR
500+0.21 EUR
1000+0.16 EUR
Mindestbestellmenge: 152
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STEVAL-POE003V1 STEVAL-POE003V1.pdf
Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; prototype board; Comp: PM8804,PM8805; 20A
Interface: Ethernet
Kind of connector: power supply; RJ45 x2
Components: PM8804; PM8805
Additional functions: Power over Ethernet (PoE)
Kit contents: prototype board
Output voltage 3: 5V DC
Output current: 20A
Type of development kit: evaluation
Produkt ist nicht verfügbar
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STPS20L60CGY-TR STPS20L60C-Y.pdf
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.74V
Max. load current: 30A
Leakage current: 95mA
Max. forward impulse current: 220A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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1N5817 1N5819RL.pdf
1N5817
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
225+0.31 EUR
Mindestbestellmenge: 225
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SMAJ28CA-TR SMAJxxX_ser.pdf
SMAJ28CA-TR
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1V; 39A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Kind of package: reel; tape
auf Bestellung 2056 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
345+0.21 EUR
388+0.18 EUR
463+0.15 EUR
527+0.14 EUR
610+0.12 EUR
676+0.11 EUR
1000+0.096 EUR
Mindestbestellmenge: 250
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P6KE10A P6KE6V8A.pdf
P6KE10A
Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 10V; 41A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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STM32F051K8U7TR en.DM00039193.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; UFQFPN32; 2÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: HDMI CEC; I2C; SPI; USART x2
Kind of architecture: Cortex M0
Memory: 8kB SRAM; 64kB FLASH
Number of 16bit timers: 7
Number of 32bit timers: 1
Family: STM32F0
Kind of core: 32-bit
Number of 12bit D/A converters: 1
Number of 12bit A/D converters: 13
Operating temperature: -40...105°C
Integrated circuit features: CRC; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMCJ6.0A-TR SMCJ33CA-TR.pdf
SMCJ6.0A-TR
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 7.05V; 152A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 7.05V
Max. forward impulse current: 152A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SMCJ
Kind of package: reel; tape
Produkt ist nicht verfügbar
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STPS1L60ZF en.CD00002285.pdf
STPS1L60ZF
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. load current: 10A
Max. forward impulse current: 60A
Kind of package: reel; tape
Leakage current: 21mA
auf Bestellung 669 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
298+0.24 EUR
451+0.16 EUR
538+0.13 EUR
669+0.11 EUR
Mindestbestellmenge: 200
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STPS1L60ZFY stps1l60-y.pdf
STPS1L60ZFY
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. load current: 10A
Max. forward impulse current: 60A
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1574 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
253+0.28 EUR
281+0.25 EUR
327+0.22 EUR
368+0.19 EUR
421+0.17 EUR
455+0.16 EUR
Mindestbestellmenge: 200
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STL10N60M6 stl10n60m6.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 48W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.5A
Power dissipation: 48W
Case: PowerFLAT 5x6
On-state resistance: 0.66Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 8.8nC
Produkt ist nicht verfügbar
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STH180N10F3-2 en.DM00034472.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 17000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.02 EUR
Mindestbestellmenge: 1000
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STPS3L45AF en.DM00089408.pdf
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 45V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Leakage current: 135mA
Max. forward impulse current: 75A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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STM32L073V8T6 STM32L073CBT6.pdf
STM32L073V8T6
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP100; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 84
Case: LQFP100
Supply voltage: 1.8...3.6V DC
Interface: I2C; IrDA; LIN; SPI; UART; USART; USB
Kind of architecture: Cortex M0+
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: STM32L0
Kind of core: 32-bit
Produkt ist nicht verfügbar
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STM32F411RCT7 en.DM00115249.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller
Type of integrated circuit: STM32 ARM microcontroller
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
160+4.83 EUR
Mindestbestellmenge: 160
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STTH1002CR en.CD00005113.pdf
STTH1002CR
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
177+0.4 EUR
191+0.37 EUR
200+0.36 EUR
Mindestbestellmenge: 162
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STTH1002CB-TR STTH1002CB-TR.pdf
STTH1002CB-TR
Hersteller: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 20ns; DPAK; Ufmax: 0.78V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: DPAK
Max. forward voltage: 0.78V
Reverse recovery time: 20ns
Produkt ist nicht verfügbar
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STD110N8F6 en.DM00151073.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 167W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 167W
Case: DPAK; TO252
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 150nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ESDALC6V1P6 esdalc6v1px.pdf
ESDALC6V1P6
Hersteller: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 30W; SOT666IP; Ch: 4; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
Semiconductor structure: common anode; quadruple; unidirectional
Mounting: SMD
Case: SOT666IP
Max. off-state voltage: 3V
Number of channels: 4
Version: ESD
Leakage current: 0.1µA
auf Bestellung 2730 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
233+0.31 EUR
252+0.28 EUR
348+0.21 EUR
365+0.2 EUR
443+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 167
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ESDA14V2BP6 description esdaxxxp6.pdf
ESDA14V2BP6
Hersteller: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 14.2V; 50W; SOT666; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 14.2V
Peak pulse power dissipation: 50W
Semiconductor structure: bidirectional; common anode; quadruple
Mounting: SMD
Case: SOT666
Max. off-state voltage: 12V
Number of channels: 4
Version: ESD
Kind of package: reel; tape
Leakage current: 1µA
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
199+0.36 EUR
305+0.23 EUR
360+0.2 EUR
500+0.18 EUR
Mindestbestellmenge: 132
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SCTH35N65G2V-7 scth35n65g2v-7.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 208W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 208W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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SCTH35N65G2V-7AG scth35n65g2v-7ag.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 208W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 208W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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TSV992IDT tsv992.pdf
TSV992IDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 20MHz; Ch: 2; 2.5÷5.5VDC; SO8; 7.5mV
Type of integrated circuit: operational amplifier
Case: SO8
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset current: 0.1nA
Input bias current: 0.1nA
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Number of channels: 2
Voltage supply range: 2.5...5.5V DC
Slew rate: 10V/μs
Bandwidth: 20MHz
auf Bestellung 2489 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.57 EUR
54+1.33 EUR
61+1.19 EUR
69+1.04 EUR
100+0.9 EUR
Mindestbestellmenge: 46
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TSV994IPT tsv994.pdf
TSV994IPT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 20MHz; Ch: 4; 2.5÷5.5VDC; TSSOP14; 7.5mV
Type of integrated circuit: operational amplifier
Case: TSSOP14
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset current: 0.1nA
Input bias current: 0.1nA
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Number of channels: 4
Voltage supply range: 2.5...5.5V DC
Slew rate: 10V/μs
Bandwidth: 20MHz
auf Bestellung 2335 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
50+1.46 EUR
55+1.32 EUR
59+1.23 EUR
Mindestbestellmenge: 44
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STP35N60DM2 STP35N60DM2.pdf
STP35N60DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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STB35N60DM2 STB35N60DM2.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+3.75 EUR
Mindestbestellmenge: 1000
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Z0103MA 2AL2 en.CD00002268.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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Z0103MN 6AA4 en.CD00002268.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Produkt ist nicht verfügbar
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Z0103NA 2AL2 en.CD00002268.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 3mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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STD13NM60ND STx13NM60ND_DS.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
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M95512-RMN6TP M95512-RDW6TP.pdf
M95512-RMN6TP
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
auf Bestellung 1138 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
250+0.72 EUR
500+0.69 EUR
1000+0.64 EUR
Mindestbestellmenge: 91
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M95512-RDW6TP M95512-RDW6TP.pdf
M95512-RDW6TP
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
auf Bestellung 1019 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
83+0.87 EUR
100+0.79 EUR
500+0.73 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
M95512-RMN6P m24512-df.pdf
M95512-RMN6P
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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TS912AIDT TS912IDT.pdf
TS912AIDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 4837 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.34 EUR
63+1.14 EUR
70+1.03 EUR
80+0.9 EUR
85+0.84 EUR
100+0.79 EUR
250+0.73 EUR
2500+0.7 EUR
Mindestbestellmenge: 54
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TS912IDT description TS912IDT.pdf
TS912IDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 3889 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
62+1.17 EUR
68+1.06 EUR
77+0.93 EUR
84+0.86 EUR
100+0.81 EUR
250+0.76 EUR
2500+0.69 EUR
Mindestbestellmenge: 52
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TS912BIDT description ts912b.pdf
TS912BIDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 2mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 1502 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
57+1.26 EUR
63+1.14 EUR
70+1.03 EUR
77+0.93 EUR
100+0.92 EUR
250+0.87 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
TS912ID TS912IDT.pdf
TS912ID
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: tube
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 1207 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.06 EUR
42+1.72 EUR
46+1.56 EUR
47+1.53 EUR
Mindestbestellmenge: 35
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TS912IYDT ts912.pdf
TS912IYDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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TS912AIYDT ts912a.pdf
TS912AIYDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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TS912BIYDT ts912b.pdf
TS912BIYDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷16VDC; SO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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LET9120 LET9120.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 80V; 18A; 200W; M246; Pout: 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 18A
Power dissipation: 200W
Case: M246
Kind of package: bulk
Kind of channel: enhancement
Kind of transistor: RF
Mechanical mounting: screw
Open-loop gain: 18dB
Efficiency: 70%
Output power: 150W
Frequency: 860MHz
Electrical mounting: FASTON connectors; soldering; THT
Produkt ist nicht verfügbar
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BD243C BD244C-STMicroelectronics.pdf
BD243C
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 115V
Collector current: 6A
Case: TO220
Mounting: THT
Frequency: 3MHz
Power: 65W
Produkt ist nicht verfügbar
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BD677A BD678.pdf
BD677A
Hersteller: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
auf Bestellung 845 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
131+0.55 EUR
167+0.43 EUR
185+0.39 EUR
250+0.34 EUR
500+0.31 EUR
Mindestbestellmenge: 77
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M24C02-FMN6TP m24c01-r.pdf
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN5
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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STSPIN220 stspin220.pdf
STSPIN220
Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; VFQFPN16; 1.3A; 1.8÷10VDC
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Case: VFQFPN16
Output current: 1.3A
Mounting: SMD
On-state resistance: 0.4Ω
Operating temperature: -40...150°C
Operating voltage: 1.8...10V DC
Kind of package: in-tray
auf Bestellung 843 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.83 EUR
28+2.57 EUR
30+2.4 EUR
100+2.16 EUR
500+1.89 EUR
Mindestbestellmenge: 26
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FERD30H60CTS FERD30H60C.pdf
FERD30H60CTS
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 15Ax2; tube; Ifsm: 250A; TO220AB; 500ns
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 0.5µs
Heatsink thickness: 0.51...0.6mm
Max. forward voltage: 0.41V
Load current: 15A x2
Max. load current: 60A
Max. off-state voltage: 60V
Max. forward impulse current: 250A
Produkt ist nicht verfügbar
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FERD30M45CT FERD30M45C.pdf
FERD30M45CT
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 15Ax2; tube; Ifsm: 250A; TO220AB
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.35V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 45V
Max. forward impulse current: 250A
Produkt ist nicht verfügbar
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FERD30SM100ST FERD30SM100ST.pdf
FERD30SM100ST
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 30A; tube; Ifsm: 250A; TO220AB
Semiconductor structure: single diode
Case: TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.39V
Load current: 30A
Max. load current: 60A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
Produkt ist nicht verfügbar
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STPS10H100CT STPS10H100CT%2CCG%2CCR%2CCFP.pdf
STPS10H100CT
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. forward impulse current: 180A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. load current: 10A
Produkt ist nicht verfügbar
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STPS10H100SFY stps10h100sfy.pdf
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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STL15N65M5 stl15n65m5.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 52W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 52W
Case: PowerFLAT 5x6
On-state resistance: 375mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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