Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (170506) > Seite 2766 nach 2842
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
L6388ED013TR | STMicroelectronics |
![]() Description: IC: driver; push-pull; SO8; 400mA; 580V; Ch: 2; 400kHz; Usup: 17V Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver Case: SO8 Output current: 0.4A Mounting: SMD Frequency: 400kHz Output voltage: 580V Number of channels: 2 Kind of package: reel; tape Topology: push-pull Operating temperature: -40...125°C Supply voltage: 17V |
auf Bestellung 2372 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
STM32H750XBH6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 480MHz Mounting: SMD Number of inputs/outputs: 168 Case: TFBGA240 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; PdR; PoR; PVD; watchdog Memory: 128kB FLASH; 1MB SRAM Operating temperature: -40...85°C Number of comparators: 2 Ciphering: AES128; AES192; AES256; HMAC; MD5; SHA; TDES; TRNG Family: STM32H7 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
STM32H750XBH6TR | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 480MHz Mounting: SMD Number of inputs/outputs: 168 Case: TFBGA240 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; PdR; PoR; PVD; watchdog Memory: 128kB FLASH; 1MB SRAM Operating temperature: -40...85°C Number of comparators: 2 Ciphering: AES128; AES192; AES256; HMAC; MD5; SHA; TDES; TRNG Family: STM32H7 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
LM2902WYDT | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.3MHz; 3÷30V; Ch: 4; SO14; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1.3MHz Operating voltage: 3...30V Mounting: SMT Number of channels: 4 Case: SO14 Slew rate: 0.4V/μs Operating temperature: -40...125°C Input offset voltage: 9mV Integrated circuit features: low power Kind of package: reel; tape Input bias current: 0.3µA Input offset current: 40nA Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
LM2902WYPT | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.3MHz; 3÷30V; Ch: 4; TSSOP14; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1.3MHz Operating voltage: 3...30V Mounting: SMT Number of channels: 4 Case: TSSOP14 Slew rate: 0.4V/μs Operating temperature: -40...125°C Input offset voltage: 9mV Integrated circuit features: low power Kind of package: reel; tape Input bias current: 0.3µA Input offset current: 40nA Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
LM2902YDT | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.3MHz; 3÷30V; Ch: 4; SO14; reel Type of integrated circuit: operational amplifier Bandwidth: 1.3MHz Operating voltage: 3...30V Mounting: SMT Number of channels: 4 Case: SO14 Slew rate: 0.4V/μs Operating temperature: -40...125°C Integrated circuit features: low power Kind of package: reel |
auf Bestellung 2096 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
LM2902YPT | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.3MHz; 3÷30V; Ch: 4; TSSOP14; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1.3MHz Open-loop gain: 100dB Operating voltage: 3...30V Mounting: SMT Number of channels: 4 Case: TSSOP14 Slew rate: 0.4V/μs Quiescent current: 375µA Operating temperature: -40...125°C Input offset voltage: 9mV Integrated circuit features: low power Kind of package: reel; tape Input bias current: 0.3µA Input offset current: 40nA |
auf Bestellung 1233 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
LD39200DPUR | STMicroelectronics |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 0.5÷5.75V; 2A; DFN8 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.25V Output voltage: 0.5...5.75V Output current: 2A Case: DFN8 Mounting: SMD Manufacturer series: LD39200 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.25...6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
LD39200PU33R | STMicroelectronics |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 2A; DFN8; SMD; ±2% Operating temperature: -40...125°C Case: DFN8 Tolerance: ±2% Output voltage: 3.3V Output current: 2A Voltage drop: 0.25V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 1.25...6V Kind of package: reel; tape Manufacturer series: LD39200 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
LM258QT | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; DFN8; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Operating voltage: 3...30V Mounting: SMT Number of channels: 2 Case: DFN8 Slew rate: 0.6V/μs Operating temperature: -40...105°C Input offset voltage: 7mV Integrated circuit features: low power Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 40nA |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
LM2904Q2T | STMicroelectronics |
![]() Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; DFN8; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Operating voltage: 3...30V Mounting: SMT Number of channels: 2 Case: DFN8 Slew rate: 0.6V/μs Operating temperature: -40...125°C Input offset voltage: 9mV Integrated circuit features: low power Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 40nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
LM193QT | STMicroelectronics |
![]() Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; DFN8; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 2 Operating voltage: 2...36V Mounting: SMT Case: DFN8 Operating temperature: -55...125°C Input offset voltage: 9mV Kind of package: reel; tape Kind of output: open collector Input offset current: 150nA Input bias current: 0.4µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
LM2903Q2T | STMicroelectronics |
![]() Description: IC: comparator; low-power; Cmp: 2; 500ns; 2÷36V; SMT; DFN8 2x2 Delay time: 500ns Kind of output: open collector Kind of package: reel; tape Kind of comparator: low-power Input offset current: 150nA Input bias current: 0.4µA Mounting: SMT Operating temperature: -40...125°C Case: DFN8 2x2 Operating voltage: 2...36V Type of integrated circuit: comparator Number of comparators: 2 Input offset voltage: 15mV |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
![]() |
LM393QT | STMicroelectronics |
![]() Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; DFN8; reel,tape; 150nA Type of integrated circuit: comparator Number of comparators: 2 Input offset voltage: 9mV Kind of output: open collector Kind of package: reel; tape Kind of comparator: low-power Input offset current: 150nA Mounting: SMT Operating temperature: 0...70°C Case: DFN8 Operating voltage: 2...36V |
auf Bestellung 1800 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STWD100NYWY3F | STMicroelectronics |
![]() Description: IC: peripheral circuit; timer; open drain; 2.7÷5.5VDC; SOT23-5 Type of integrated circuit: peripheral circuit Kind of integrated circuit: timer Kind of RESET output: open drain Active logical level: low Supply voltage: 2.7...5.5V DC Case: SOT23-5 Operating temperature: -40...85°C Mounting: SMD Integrated circuit features: watchdog DC supply current: 13µA |
auf Bestellung 15164 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() +1 |
STM32H745I-DISCO | STMicroelectronics |
![]() Description: Dev.kit: STM32; base board,TFT display; Add-on connectors: 4 Type of development kit: STM32 Kit contents: base board; TFT display Components: LCD display; STLINK-V3E; STM32H745XIH6 Programmers and development kits features: integrated programmer/debugger Interface: CAN; EBI; EMI; Ethernet; I2C; IrDA; LIN; MDIO; MMC; QSPI; SAI; SD; SDIO; SPDIF; SPI; UART; USART; USB OTG Kind of connector: Jack 3,5mm x2; pin strips; RJ45; STMod+ socket; USB micro AB Application: for devices with displays Number of add-on connectors: 4 Kind of architecture: Cortex M7 |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() +1 |
STM32H750B-DK | STMicroelectronics |
![]() Description: Dev.kit: STM32; base board,TFT display; Add-on connectors: 4 Type of development kit: STM32 Kit contents: base board; TFT display Components: LCD display; STLINK-V3E; STM32H750XBH6 Kind of connector: Jack 3,5mm x2; pin strips; RJ45; STMod+ socket; USB micro AB Interface: CAN; EBI; EMI; Ethernet; I2C; IrDA; LIN; MDIO; MMC; QSPI; SAI; SD; SDIO; SPDIF; SPI; UART; USART; USB OTG Application: for devices with displays Programmers and development kits features: integrated programmer/debugger Kind of architecture: Cortex M7 Number of add-on connectors: 4 |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
L293B | STMicroelectronics |
![]() Description: IC: driver; push-pull; motor controller; DIP16; 1A; Ch: 4; 4.5÷36V Type of integrated circuit: driver Case: DIP16 Output current: 1A Number of channels: 4 Supply voltage: 4.5...36V Mounting: THT Topology: push-pull Kind of package: tube Kind of integrated circuit: motor controller |
auf Bestellung 351 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STD3NK80ZT4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.57A Power dissipation: 70W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 1884 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STTH12R06G | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 600V; 12A; 25ns; D2PAK; Ufmax: 1.4V; tube Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 12A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: D2PAK Max. forward voltage: 1.4V Max. forward impulse current: 100A Kind of package: tube |
auf Bestellung 176 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STGP7NC60HD | STMicroelectronics |
![]() ![]() Description: Transistor: IGBT; 600V; 14A; 80W; TO220AB Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 14A Pulsed collector current: 50A Type of transistor: IGBT Power dissipation: 80W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 48nC Mounting: THT Case: TO220AB |
auf Bestellung 338 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STTH60W03CW | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 280A; TO247-3; 25ns Semiconductor structure: common cathode; double Max. off-state voltage: 300V Load current: 30A x2 Case: TO247-3 Max. forward voltage: 0.94V Max. forward impulse current: 280A Reverse recovery time: 25ns Type of diode: rectifying Kind of package: tube Features of semiconductor devices: ultrafast switching Mounting: THT |
auf Bestellung 199 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
SM6T27CA | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 27V; 16A; bidirectional; ±5%; SMB; reel,tape Case: SMB Tolerance: ±5% Max. off-state voltage: 23.1V Semiconductor structure: bidirectional Max. forward impulse current: 16A Breakdown voltage: 27V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Mounting: SMD |
auf Bestellung 6089 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STM32F072RBT6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 48MHz; LQFP64; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 48MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 2...3.6V DC Interface: CAN; I2C x2; SPI x2; UART x4; USB Kind of architecture: Cortex M0 Memory: 16kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 16bit timers: 8 Number of 32bit timers: 1 Family: STM32F0 |
auf Bestellung 626 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STP3NK90ZFP | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 25W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.89A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 392 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
SM6T30A | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 9659 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STN3NF06L | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3.3W; SOT223; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Power dissipation: 3.3W Case: SOT223 Gate-source voltage: ±16V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 4318 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STPS0520Z | STMicroelectronics |
![]() Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape Case: SOD123 Max. off-state voltage: 20V Max. load current: 2A Max. forward voltage: 0.32V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5.5A Kind of package: reel; tape Type of diode: Schottky switching Mounting: SMD |
auf Bestellung 7232 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STTH6002CW | STMicroelectronics |
![]() ![]() Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 330A; TO247-3; 22ns Semiconductor structure: common cathode; double Max. off-state voltage: 200V Load current: 30A x2 Case: TO247-3 Max. forward voltage: 0.75V Max. forward impulse current: 330A Max. load current: 50A Reverse recovery time: 22ns Type of diode: rectifying Kind of package: tube Features of semiconductor devices: ultrafast switching Mounting: THT |
auf Bestellung 105 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STPS20H100CG | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; tube Mounting: SMD Case: D2PAK Kind of package: tube Max. off-state voltage: 100V Max. load current: 30A Max. forward voltage: 0.59V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 250A Type of diode: Schottky rectifying |
auf Bestellung 1239 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STW8NK80Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 140W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
STW4N150 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247 Case: TO247 Drain-source voltage: 1.5kV Drain current: 2.5A On-state resistance: 7Ω Type of transistor: N-MOSFET Power dissipation: 160W Polarisation: unipolar Kind of package: tube Technology: PowerMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Mounting: THT |
auf Bestellung 87 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
ST490ABDR | STMicroelectronics |
![]() Description: IC: interface; transceiver; half duplex,RS422,RS485; 25Mbps; SO8 Case: SO8 Supply voltage: 4.5...5.5V DC Type of integrated circuit: interface Interface: half duplex; RS422; RS485 Data transfer rate: 25Mbps Number of receivers: 1 Number of transmitters: 1 Kind of integrated circuit: transceiver Mounting: SMD |
auf Bestellung 3630 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STE48NM50 | STMicroelectronics |
![]() Description: Module; single transistor; 500V; 30A; ISOTOP; screw; Idm: 192A; 450W Drain-source voltage: 500V Drain current: 30A On-state resistance: 80mΩ Power dissipation: 450W Polarisation: unipolar Case: ISOTOP Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: MDmesh™; MESH OVERLAY™; PowerMesh™ Gate-source voltage: ±30V Pulsed drain current: 192A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
STN4NF20L | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 1A; 3.3W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 200V Drain current: 1A Power dissipation: 3.3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 619 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STP40NF20 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 160W Case: TO220-3 Mounting: THT Kind of package: tube Drain-source voltage: 200V Drain current: 25A On-state resistance: 45mΩ Technology: STripFET™ Kind of channel: enhancement Gate-source voltage: ±20V |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STPS140A | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.43V Max. forward impulse current: 60A Kind of package: reel; tape Max. load current: 7A |
auf Bestellung 15536 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STW45NM60 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 28A; 417W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 28A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 90mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STB42N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; D2PAK; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.8A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 79mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Technology: SuperMesh™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
STP40NF10L | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 25A; 150W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 150W Case: TO220-3 Mounting: THT Kind of package: tube Drain-source voltage: 100V Drain current: 25A On-state resistance: 36mΩ Technology: STripFET™ Kind of channel: enhancement Gate-source voltage: ±17V |
auf Bestellung 154 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STP42N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.8A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 79mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Technology: MDmesh™ V |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STW45N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Case: TO247 On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 210W Version: ESD Gate-source voltage: ±20V Drain current: 22A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
STW48NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Power dissipation: 330W Case: TO247 Gate-source voltage: ±25V On-state resistance: 55mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
SMBJ48A-TR | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 56.1V; 8.1A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 56.1V Max. forward impulse current: 8.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 2234 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
ST1S40IPHR | STMicroelectronics |
![]() Description: Driver; DC/DC converter; Uin: 4÷18VDC; Uout: 0.8÷18VDC; 3A; HSOP8 Frequency: 850kHz Output voltage: 0.8...18V DC Output current: 3A Type of integrated circuit: driver Number of channels: 1 Input voltage: 4...18V DC Kind of integrated circuit: DC/DC converter Topology: buck Mounting: SMD Case: HSOP8 |
auf Bestellung 1886 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STD4NK80ZT4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; DPAK; ESD Power dissipation: 80W Kind of package: reel; tape Case: DPAK Mounting: SMD Drain-source voltage: 800V Drain current: 1.89A On-state resistance: 3.5Ω Type of transistor: N-MOSFET Polarisation: unipolar Version: ESD Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V |
auf Bestellung 2477 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
STP14N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.4A Pulsed drain current: 48A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 445mΩ Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
STP45N60DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 95A Power dissipation: 210W Case: TO220-3 On-state resistance: 99mΩ Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STE145N65M5 | STMicroelectronics |
![]() Description: Module; single transistor; 650V; 90A; ISOTOP; screw; Idm: 572A; 679W Drain-source voltage: 650V Drain current: 90A On-state resistance: 12mΩ Power dissipation: 679W Polarisation: unipolar Case: ISOTOP Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: MDmesh™; MESH OVERLAY™; PowerMesh™ Gate-source voltage: ±25V Pulsed drain current: 572A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
STGW40V60DF | STMicroelectronics |
![]() Description: Transistor: IGBT; 600V; 80A; 283W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 80A Power dissipation: 283W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 226nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 396 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STPS0540Z | STMicroelectronics |
![]() Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.4V Max. load current: 2A Max. forward impulse current: 5.5A Kind of package: reel; tape |
auf Bestellung 6603 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STPS1L40A | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 60A Kind of package: reel; tape Max. load current: 8A |
auf Bestellung 16142 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STPS40150CG | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 20Ax2; tube Max. load current: 40A Max. forward voltage: 0.92V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 250A Kind of package: tube Type of diode: Schottky rectifying Mounting: SMD Case: D2PAK Max. off-state voltage: 150V |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STPS40150CT | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; THT; 150V; 20Ax2; TO220AB; Ufmax: 0.69V Max. forward voltage: 0.69V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 250A Kind of package: tube Type of diode: Schottky rectifying Heatsink thickness: 1.23...1.32mm Mounting: THT Case: TO220AB Max. off-state voltage: 150V |
auf Bestellung 102 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STY145N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 87A; 625W; MAX247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Case: MAX247 On-state resistance: 15mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 625W Version: ESD Gate-source voltage: ±25V Drain current: 87A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
SMAJ24CA-TR | STMicroelectronics |
![]() Description: Diode: TVS; 400W; 26.7V; 46A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7V Max. forward impulse current: 46A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Leakage current: 1µA |
auf Bestellung 3984 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STP45N60DM2AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 136A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 93mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STPS1545CT | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; THT; 45V; 7.5Ax2; TO220AB; Ufmax: 0.5V Max. off-state voltage: 45V Max. load current: 20A Max. forward voltage: 0.5V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 150A Kind of package: tube Type of diode: Schottky rectifying Heatsink thickness: 1.23...1.32mm Mounting: THT Case: TO220AB |
auf Bestellung 193 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STPS1545FP | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220FP-2; Ufmax: 0.57V Max. off-state voltage: 45V Max. load current: 30A Max. forward voltage: 0.57V Load current: 15A Semiconductor structure: single diode Max. forward impulse current: 200A Kind of package: tube Type of diode: Schottky rectifying Mounting: THT Case: TO220FP-2 |
auf Bestellung 244 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
STPS24045TV | STMicroelectronics |
![]() Description: Module: diode; double independent; 45V; If: 120Ax2; ISOTOP; screw Max. forward impulse current: 1.15kA Max. off-state voltage: 45V Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Max. load current: 240A Type of semiconductor module: diode Max. forward voltage: 0.68V Load current: 120A x2 Semiconductor structure: double independent |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
L6388ED013TR |
![]() |
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; push-pull; SO8; 400mA; 580V; Ch: 2; 400kHz; Usup: 17V
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Case: SO8
Output current: 0.4A
Mounting: SMD
Frequency: 400kHz
Output voltage: 580V
Number of channels: 2
Kind of package: reel; tape
Topology: push-pull
Operating temperature: -40...125°C
Supply voltage: 17V
Category: MOSFET/IGBT drivers
Description: IC: driver; push-pull; SO8; 400mA; 580V; Ch: 2; 400kHz; Usup: 17V
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Case: SO8
Output current: 0.4A
Mounting: SMD
Frequency: 400kHz
Output voltage: 580V
Number of channels: 2
Kind of package: reel; tape
Topology: push-pull
Operating temperature: -40...125°C
Supply voltage: 17V
auf Bestellung 2372 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.39 EUR |
30+ | 2.45 EUR |
34+ | 2.16 EUR |
35+ | 2.04 EUR |
250+ | 1.97 EUR |
STM32H750XBH6 |
![]() |
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; PdR; PoR; PVD; watchdog
Memory: 128kB FLASH; 1MB SRAM
Operating temperature: -40...85°C
Number of comparators: 2
Ciphering: AES128; AES192; AES256; HMAC; MD5; SHA; TDES; TRNG
Family: STM32H7
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; PdR; PoR; PVD; watchdog
Memory: 128kB FLASH; 1MB SRAM
Operating temperature: -40...85°C
Number of comparators: 2
Ciphering: AES128; AES192; AES256; HMAC; MD5; SHA; TDES; TRNG
Family: STM32H7
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STM32H750XBH6TR |
![]() |
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; PdR; PoR; PVD; watchdog
Memory: 128kB FLASH; 1MB SRAM
Operating temperature: -40...85°C
Number of comparators: 2
Ciphering: AES128; AES192; AES256; HMAC; MD5; SHA; TDES; TRNG
Family: STM32H7
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; PdR; PoR; PVD; watchdog
Memory: 128kB FLASH; 1MB SRAM
Operating temperature: -40...85°C
Number of comparators: 2
Ciphering: AES128; AES192; AES256; HMAC; MD5; SHA; TDES; TRNG
Family: STM32H7
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LM2902WYDT |
![]() |
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; 3÷30V; Ch: 4; SO14; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 0.4V/μs
Operating temperature: -40...125°C
Input offset voltage: 9mV
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.3µA
Input offset current: 40nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; 3÷30V; Ch: 4; SO14; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 0.4V/μs
Operating temperature: -40...125°C
Input offset voltage: 9mV
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.3µA
Input offset current: 40nA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LM2902WYPT |
![]() |
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; 3÷30V; Ch: 4; TSSOP14; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 0.4V/μs
Operating temperature: -40...125°C
Input offset voltage: 9mV
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.3µA
Input offset current: 40nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; 3÷30V; Ch: 4; TSSOP14; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 0.4V/μs
Operating temperature: -40...125°C
Input offset voltage: 9mV
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.3µA
Input offset current: 40nA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LM2902YDT |
![]() |
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; 3÷30V; Ch: 4; SO14; reel
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 0.4V/μs
Operating temperature: -40...125°C
Integrated circuit features: low power
Kind of package: reel
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; 3÷30V; Ch: 4; SO14; reel
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 0.4V/μs
Operating temperature: -40...125°C
Integrated circuit features: low power
Kind of package: reel
auf Bestellung 2096 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
144+ | 0.5 EUR |
332+ | 0.22 EUR |
350+ | 0.2 EUR |
LM2902YPT |
![]() |
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; 3÷30V; Ch: 4; TSSOP14; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Open-loop gain: 100dB
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 0.4V/μs
Quiescent current: 375µA
Operating temperature: -40...125°C
Input offset voltage: 9mV
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.3µA
Input offset current: 40nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.3MHz; 3÷30V; Ch: 4; TSSOP14; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.3MHz
Open-loop gain: 100dB
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 0.4V/μs
Quiescent current: 375µA
Operating temperature: -40...125°C
Input offset voltage: 9mV
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.3µA
Input offset current: 40nA
auf Bestellung 1233 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
207+ | 0.35 EUR |
365+ | 0.2 EUR |
388+ | 0.18 EUR |
LD39200DPUR |
![]() |
Hersteller: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.5÷5.75V; 2A; DFN8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 0.5...5.75V
Output current: 2A
Case: DFN8
Mounting: SMD
Manufacturer series: LD39200
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.25...6V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.5÷5.75V; 2A; DFN8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 0.5...5.75V
Output current: 2A
Case: DFN8
Mounting: SMD
Manufacturer series: LD39200
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.25...6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LD39200PU33R |
![]() |
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 2A; DFN8; SMD; ±2%
Operating temperature: -40...125°C
Case: DFN8
Tolerance: ±2%
Output voltage: 3.3V
Output current: 2A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.25...6V
Kind of package: reel; tape
Manufacturer series: LD39200
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 2A; DFN8; SMD; ±2%
Operating temperature: -40...125°C
Case: DFN8
Tolerance: ±2%
Output voltage: 3.3V
Output current: 2A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.25...6V
Kind of package: reel; tape
Manufacturer series: LD39200
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LM258QT |
![]() |
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; DFN8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 2
Case: DFN8
Slew rate: 0.6V/μs
Operating temperature: -40...105°C
Input offset voltage: 7mV
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; DFN8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 2
Case: DFN8
Slew rate: 0.6V/μs
Operating temperature: -40...105°C
Input offset voltage: 7mV
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
341+ | 0.21 EUR |
379+ | 0.19 EUR |
516+ | 0.14 EUR |
550+ | 0.13 EUR |
LM2904Q2T |
![]() |
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; DFN8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 2
Case: DFN8
Slew rate: 0.6V/μs
Operating temperature: -40...125°C
Input offset voltage: 9mV
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; DFN8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 2
Case: DFN8
Slew rate: 0.6V/μs
Operating temperature: -40...125°C
Input offset voltage: 9mV
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LM193QT |
![]() |
Hersteller: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; DFN8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: DFN8
Operating temperature: -55...125°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Input bias current: 0.4µA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; DFN8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: DFN8
Operating temperature: -55...125°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Input bias current: 0.4µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LM2903Q2T |
![]() |
Hersteller: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 500ns; 2÷36V; SMT; DFN8 2x2
Delay time: 500ns
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: low-power
Input offset current: 150nA
Input bias current: 0.4µA
Mounting: SMT
Operating temperature: -40...125°C
Case: DFN8 2x2
Operating voltage: 2...36V
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 15mV
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 500ns; 2÷36V; SMT; DFN8 2x2
Delay time: 500ns
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: low-power
Input offset current: 150nA
Input bias current: 0.4µA
Mounting: SMT
Operating temperature: -40...125°C
Case: DFN8 2x2
Operating voltage: 2...36V
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 15mV
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
319+ | 0.22 EUR |
355+ | 0.2 EUR |
500+ | 0.14 EUR |
532+ | 0.13 EUR |
LM393QT |
![]() |
Hersteller: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; DFN8; reel,tape; 150nA
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 9mV
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: low-power
Input offset current: 150nA
Mounting: SMT
Operating temperature: 0...70°C
Case: DFN8
Operating voltage: 2...36V
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; DFN8; reel,tape; 150nA
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 9mV
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: low-power
Input offset current: 150nA
Mounting: SMT
Operating temperature: 0...70°C
Case: DFN8
Operating voltage: 2...36V
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
382+ | 0.19 EUR |
410+ | 0.17 EUR |
500+ | 0.14 EUR |
STWD100NYWY3F |
![]() |
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; timer; open drain; 2.7÷5.5VDC; SOT23-5
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...85°C
Mounting: SMD
Integrated circuit features: watchdog
DC supply current: 13µA
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; timer; open drain; 2.7÷5.5VDC; SOT23-5
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...85°C
Mounting: SMD
Integrated circuit features: watchdog
DC supply current: 13µA
auf Bestellung 15164 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
103+ | 0.69 EUR |
STM32H745I-DISCO |
![]() |
Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; base board,TFT display; Add-on connectors: 4
Type of development kit: STM32
Kit contents: base board; TFT display
Components: LCD display; STLINK-V3E; STM32H745XIH6
Programmers and development kits features: integrated programmer/debugger
Interface: CAN; EBI; EMI; Ethernet; I2C; IrDA; LIN; MDIO; MMC; QSPI; SAI; SD; SDIO; SPDIF; SPI; UART; USART; USB OTG
Kind of connector: Jack 3,5mm x2; pin strips; RJ45; STMod+ socket; USB micro AB
Application: for devices with displays
Number of add-on connectors: 4
Kind of architecture: Cortex M7
Category: STM development kits
Description: Dev.kit: STM32; base board,TFT display; Add-on connectors: 4
Type of development kit: STM32
Kit contents: base board; TFT display
Components: LCD display; STLINK-V3E; STM32H745XIH6
Programmers and development kits features: integrated programmer/debugger
Interface: CAN; EBI; EMI; Ethernet; I2C; IrDA; LIN; MDIO; MMC; QSPI; SAI; SD; SDIO; SPDIF; SPI; UART; USART; USB OTG
Kind of connector: Jack 3,5mm x2; pin strips; RJ45; STMod+ socket; USB micro AB
Application: for devices with displays
Number of add-on connectors: 4
Kind of architecture: Cortex M7
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 158.76 EUR |
STM32H750B-DK |
![]() |
Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; base board,TFT display; Add-on connectors: 4
Type of development kit: STM32
Kit contents: base board; TFT display
Components: LCD display; STLINK-V3E; STM32H750XBH6
Kind of connector: Jack 3,5mm x2; pin strips; RJ45; STMod+ socket; USB micro AB
Interface: CAN; EBI; EMI; Ethernet; I2C; IrDA; LIN; MDIO; MMC; QSPI; SAI; SD; SDIO; SPDIF; SPI; UART; USART; USB OTG
Application: for devices with displays
Programmers and development kits features: integrated programmer/debugger
Kind of architecture: Cortex M7
Number of add-on connectors: 4
Category: STM development kits
Description: Dev.kit: STM32; base board,TFT display; Add-on connectors: 4
Type of development kit: STM32
Kit contents: base board; TFT display
Components: LCD display; STLINK-V3E; STM32H750XBH6
Kind of connector: Jack 3,5mm x2; pin strips; RJ45; STMod+ socket; USB micro AB
Interface: CAN; EBI; EMI; Ethernet; I2C; IrDA; LIN; MDIO; MMC; QSPI; SAI; SD; SDIO; SPDIF; SPI; UART; USART; USB OTG
Application: for devices with displays
Programmers and development kits features: integrated programmer/debugger
Kind of architecture: Cortex M7
Number of add-on connectors: 4
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 157.59 EUR |
L293B |
![]() |
Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; push-pull; motor controller; DIP16; 1A; Ch: 4; 4.5÷36V
Type of integrated circuit: driver
Case: DIP16
Output current: 1A
Number of channels: 4
Supply voltage: 4.5...36V
Mounting: THT
Topology: push-pull
Kind of package: tube
Kind of integrated circuit: motor controller
Category: Motor and PWM drivers
Description: IC: driver; push-pull; motor controller; DIP16; 1A; Ch: 4; 4.5÷36V
Type of integrated circuit: driver
Case: DIP16
Output current: 1A
Number of channels: 4
Supply voltage: 4.5...36V
Mounting: THT
Topology: push-pull
Kind of package: tube
Kind of integrated circuit: motor controller
auf Bestellung 351 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.94 EUR |
18+ | 4 EUR |
19+ | 3.79 EUR |
STD3NK80ZT4 |
![]() |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1884 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.3 EUR |
42+ | 1.72 EUR |
113+ | 0.63 EUR |
120+ | 0.6 EUR |
STTH12R06G |
![]() |
Hersteller: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 12A; 25ns; D2PAK; Ufmax: 1.4V; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 12A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 1.4V
Max. forward impulse current: 100A
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 12A; 25ns; D2PAK; Ufmax: 1.4V; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 12A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 1.4V
Max. forward impulse current: 100A
Kind of package: tube
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.56 EUR |
57+ | 1.27 EUR |
73+ | 0.98 EUR |
77+ | 0.93 EUR |
STGP7NC60HD | ![]() |
![]() |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; TO220AB
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 14A
Pulsed collector current: 50A
Type of transistor: IGBT
Power dissipation: 80W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Mounting: THT
Case: TO220AB
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; TO220AB
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 14A
Pulsed collector current: 50A
Type of transistor: IGBT
Power dissipation: 80W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Mounting: THT
Case: TO220AB
auf Bestellung 338 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.93 EUR |
45+ | 1.6 EUR |
65+ | 1.12 EUR |
68+ | 1.06 EUR |
STTH60W03CW |
![]() |
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 280A; TO247-3; 25ns
Semiconductor structure: common cathode; double
Max. off-state voltage: 300V
Load current: 30A x2
Case: TO247-3
Max. forward voltage: 0.94V
Max. forward impulse current: 280A
Reverse recovery time: 25ns
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 280A; TO247-3; 25ns
Semiconductor structure: common cathode; double
Max. off-state voltage: 300V
Load current: 30A x2
Case: TO247-3
Max. forward voltage: 0.94V
Max. forward impulse current: 280A
Reverse recovery time: 25ns
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Mounting: THT
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.26 EUR |
27+ | 2.69 EUR |
28+ | 2.56 EUR |
30+ | 2.47 EUR |
SM6T27CA |
![]() |
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 27V; 16A; bidirectional; ±5%; SMB; reel,tape
Case: SMB
Tolerance: ±5%
Max. off-state voltage: 23.1V
Semiconductor structure: bidirectional
Max. forward impulse current: 16A
Breakdown voltage: 27V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Mounting: SMD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 27V; 16A; bidirectional; ±5%; SMB; reel,tape
Case: SMB
Tolerance: ±5%
Max. off-state voltage: 23.1V
Semiconductor structure: bidirectional
Max. forward impulse current: 16A
Breakdown voltage: 27V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Mounting: SMD
auf Bestellung 6089 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
120+ | 0.6 EUR |
180+ | 0.4 EUR |
224+ | 0.32 EUR |
249+ | 0.29 EUR |
633+ | 0.11 EUR |
STM32F072RBT6 |
![]() |
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SPI x2; UART x4; USB
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 16bit timers: 8
Number of 32bit timers: 1
Family: STM32F0
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SPI x2; UART x4; USB
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 16bit timers: 8
Number of 32bit timers: 1
Family: STM32F0
auf Bestellung 626 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.72 EUR |
16+ | 4.53 EUR |
17+ | 4.29 EUR |
25+ | 4.18 EUR |
50+ | 4.12 EUR |
STP3NK90ZFP |
![]() |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.89A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.89A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 392 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
58+ | 1.24 EUR |
61+ | 1.19 EUR |
66+ | 1.09 EUR |
104+ | 0.69 EUR |
110+ | 0.65 EUR |
SM6T30A |
![]() |
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 9659 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
229+ | 0.31 EUR |
252+ | 0.28 EUR |
264+ | 0.27 EUR |
582+ | 0.12 EUR |
STN3NF06L |
![]() |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3.3W; SOT223; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Power dissipation: 3.3W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3.3W; SOT223; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Power dissipation: 3.3W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 4318 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.23 EUR |
84+ | 0.85 EUR |
100+ | 0.72 EUR |
233+ | 0.31 EUR |
247+ | 0.29 EUR |
STPS0520Z |
![]() |
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Case: SOD123
Max. off-state voltage: 20V
Max. load current: 2A
Max. forward voltage: 0.32V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Case: SOD123
Max. off-state voltage: 20V
Max. load current: 2A
Max. forward voltage: 0.32V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
auf Bestellung 7232 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
371+ | 0.19 EUR |
529+ | 0.14 EUR |
619+ | 0.12 EUR |
1583+ | 0.045 EUR |
1673+ | 0.043 EUR |
STTH6002CW | ![]() |
![]() |
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 330A; TO247-3; 22ns
Semiconductor structure: common cathode; double
Max. off-state voltage: 200V
Load current: 30A x2
Case: TO247-3
Max. forward voltage: 0.75V
Max. forward impulse current: 330A
Max. load current: 50A
Reverse recovery time: 22ns
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 330A; TO247-3; 22ns
Semiconductor structure: common cathode; double
Max. off-state voltage: 200V
Load current: 30A x2
Case: TO247-3
Max. forward voltage: 0.75V
Max. forward impulse current: 330A
Max. load current: 50A
Reverse recovery time: 22ns
Type of diode: rectifying
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Mounting: THT
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.28 EUR |
18+ | 4.03 EUR |
19+ | 3.8 EUR |
90+ | 3.66 EUR |
STPS20H100CG |
![]() |
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; tube
Mounting: SMD
Case: D2PAK
Kind of package: tube
Max. off-state voltage: 100V
Max. load current: 30A
Max. forward voltage: 0.59V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; tube
Mounting: SMD
Case: D2PAK
Kind of package: tube
Max. off-state voltage: 100V
Max. load current: 30A
Max. forward voltage: 0.59V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Type of diode: Schottky rectifying
auf Bestellung 1239 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
60+ | 1.2 EUR |
80+ | 0.9 EUR |
85+ | 0.85 EUR |
500+ | 0.82 EUR |
STW8NK80Z |
![]() |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STW4N150 |
![]() |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247
Case: TO247
Drain-source voltage: 1.5kV
Drain current: 2.5A
On-state resistance: 7Ω
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Kind of package: tube
Technology: PowerMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247
Case: TO247
Drain-source voltage: 1.5kV
Drain current: 2.5A
On-state resistance: 7Ω
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Kind of package: tube
Technology: PowerMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.35 EUR |
12+ | 6.13 EUR |
25+ | 5.91 EUR |
ST490ABDR |
![]() |
Hersteller: STMicroelectronics
Category: RS232 / RS422 / RS485 - integr. circ.
Description: IC: interface; transceiver; half duplex,RS422,RS485; 25Mbps; SO8
Case: SO8
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: interface
Interface: half duplex; RS422; RS485
Data transfer rate: 25Mbps
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Mounting: SMD
Category: RS232 / RS422 / RS485 - integr. circ.
Description: IC: interface; transceiver; half duplex,RS422,RS485; 25Mbps; SO8
Case: SO8
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: interface
Interface: half duplex; RS422; RS485
Data transfer rate: 25Mbps
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Mounting: SMD
auf Bestellung 3630 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.3 EUR |
43+ | 1.7 EUR |
85+ | 0.84 EUR |
90+ | 0.8 EUR |
STE48NM50 |
![]() |
Hersteller: STMicroelectronics
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 30A; ISOTOP; screw; Idm: 192A; 450W
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 80mΩ
Power dissipation: 450W
Polarisation: unipolar
Case: ISOTOP
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Gate-source voltage: ±30V
Pulsed drain current: 192A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 30A; ISOTOP; screw; Idm: 192A; 450W
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 80mΩ
Power dissipation: 450W
Polarisation: unipolar
Case: ISOTOP
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Gate-source voltage: ±30V
Pulsed drain current: 192A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STN4NF20L |
![]() |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 1A; 3.3W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1A
Power dissipation: 3.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 1A; 3.3W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1A
Power dissipation: 3.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 619 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.69 EUR |
127+ | 0.56 EUR |
212+ | 0.34 EUR |
225+ | 0.32 EUR |
STP40NF20 |
![]() |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 200V
Drain current: 25A
On-state resistance: 45mΩ
Technology: STripFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 200V
Drain current: 25A
On-state resistance: 45mΩ
Technology: STripFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.65 EUR |
18+ | 4.19 EUR |
23+ | 3.2 EUR |
24+ | 3.03 EUR |
STPS140A |
![]() |
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 60A
Kind of package: reel; tape
Max. load current: 7A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 60A
Kind of package: reel; tape
Max. load current: 7A
auf Bestellung 15536 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
265+ | 0.27 EUR |
338+ | 0.21 EUR |
410+ | 0.17 EUR |
494+ | 0.14 EUR |
844+ | 0.085 EUR |
892+ | 0.08 EUR |
2500+ | 0.077 EUR |
STW45NM60 |
![]() |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; 417W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; 417W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.87 EUR |
10+ | 7.39 EUR |
11+ | 6.99 EUR |
STB42N65M5 |
![]() |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP40NF10L |
![]() |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 25A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: TO220-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 36mΩ
Technology: STripFET™
Kind of channel: enhancement
Gate-source voltage: ±17V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 25A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: TO220-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 36mΩ
Technology: STripFET™
Kind of channel: enhancement
Gate-source voltage: ±17V
auf Bestellung 154 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.17 EUR |
33+ | 2.17 EUR |
85+ | 0.84 EUR |
90+ | 0.8 EUR |
STP42N65M5 |
![]() |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: MDmesh™ V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: MDmesh™ V
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.62 EUR |
7+ | 10.62 EUR |
STW45N65M5 |
![]() |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO247
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 210W
Version: ESD
Gate-source voltage: ±20V
Drain current: 22A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO247
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 210W
Version: ESD
Gate-source voltage: ±20V
Drain current: 22A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STW48NM60N |
![]() |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.55 EUR |
17+ | 4.22 EUR |
SMBJ48A-TR |
![]() |
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 56.1V; 8.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 8.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 56.1V; 8.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 8.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 2234 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
180+ | 0.4 EUR |
225+ | 0.32 EUR |
250+ | 0.29 EUR |
658+ | 0.11 EUR |
695+ | 0.1 EUR |
ST1S40IPHR |
![]() |
Hersteller: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 4÷18VDC; Uout: 0.8÷18VDC; 3A; HSOP8
Frequency: 850kHz
Output voltage: 0.8...18V DC
Output current: 3A
Type of integrated circuit: driver
Number of channels: 1
Input voltage: 4...18V DC
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Case: HSOP8
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 4÷18VDC; Uout: 0.8÷18VDC; 3A; HSOP8
Frequency: 850kHz
Output voltage: 0.8...18V DC
Output current: 3A
Type of integrated circuit: driver
Number of channels: 1
Input voltage: 4...18V DC
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Case: HSOP8
auf Bestellung 1886 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.9 EUR |
26+ | 2.77 EUR |
34+ | 2.13 EUR |
36+ | 2 EUR |
500+ | 1.94 EUR |
STD4NK80ZT4 |
![]() |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; DPAK; ESD
Power dissipation: 80W
Kind of package: reel; tape
Case: DPAK
Mounting: SMD
Drain-source voltage: 800V
Drain current: 1.89A
On-state resistance: 3.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; DPAK; ESD
Power dissipation: 80W
Kind of package: reel; tape
Case: DPAK
Mounting: SMD
Drain-source voltage: 800V
Drain current: 1.89A
On-state resistance: 3.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
auf Bestellung 2477 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.27 EUR |
48+ | 1.52 EUR |
105+ | 0.69 EUR |
112+ | 0.64 EUR |
STP14N80K5 |
![]() |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.4A
Pulsed drain current: 48A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 445mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.4A
Pulsed drain current: 48A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 445mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP45N60DM6 |
![]() |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 95A
Power dissipation: 210W
Case: TO220-3
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 95A
Power dissipation: 210W
Case: TO220-3
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.59 EUR |
13+ | 5.59 EUR |
STE145N65M5 |
![]() |
Hersteller: STMicroelectronics
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 90A; ISOTOP; screw; Idm: 572A; 679W
Drain-source voltage: 650V
Drain current: 90A
On-state resistance: 12mΩ
Power dissipation: 679W
Polarisation: unipolar
Case: ISOTOP
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Gate-source voltage: ±25V
Pulsed drain current: 572A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 90A; ISOTOP; screw; Idm: 572A; 679W
Drain-source voltage: 650V
Drain current: 90A
On-state resistance: 12mΩ
Power dissipation: 679W
Polarisation: unipolar
Case: ISOTOP
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Gate-source voltage: ±25V
Pulsed drain current: 572A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STGW40V60DF |
![]() |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 80A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 80A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 226nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 80A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 80A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 226nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 396 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.49 EUR |
26+ | 2.77 EUR |
28+ | 2.62 EUR |
120+ | 2.52 EUR |
STPS0540Z |
![]() |
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.4V
Max. load current: 2A
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.4V
Max. load current: 2A
Max. forward impulse current: 5.5A
Kind of package: reel; tape
auf Bestellung 6603 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
348+ | 0.21 EUR |
413+ | 0.17 EUR |
479+ | 0.15 EUR |
558+ | 0.13 EUR |
1241+ | 0.058 EUR |
1313+ | 0.054 EUR |
STPS1L40A |
![]() |
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 60A
Kind of package: reel; tape
Max. load current: 8A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 60A
Kind of package: reel; tape
Max. load current: 8A
auf Bestellung 16142 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
317+ | 0.23 EUR |
483+ | 0.15 EUR |
879+ | 0.081 EUR |
930+ | 0.077 EUR |
5000+ | 0.074 EUR |
STPS40150CG |
![]() |
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 20Ax2; tube
Max. load current: 40A
Max. forward voltage: 0.92V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 150V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 20Ax2; tube
Max. load current: 40A
Max. forward voltage: 0.92V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 150V
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.43 EUR |
23+ | 3.12 EUR |
31+ | 2.37 EUR |
32+ | 2.25 EUR |
STPS40150CT |
![]() |
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 20Ax2; TO220AB; Ufmax: 0.69V
Max. forward voltage: 0.69V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 150V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 20Ax2; TO220AB; Ufmax: 0.69V
Max. forward voltage: 0.69V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 150V
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.32 EUR |
33+ | 2.2 EUR |
37+ | 1.94 EUR |
43+ | 1.67 EUR |
46+ | 1.58 EUR |
STY145N65M5 |
![]() |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 87A; 625W; MAX247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: MAX247
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 625W
Version: ESD
Gate-source voltage: ±25V
Drain current: 87A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 87A; 625W; MAX247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: MAX247
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 625W
Version: ESD
Gate-source voltage: ±25V
Drain current: 87A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMAJ24CA-TR |
![]() |
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7V; 46A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 46A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7V; 46A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 46A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
auf Bestellung 3984 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
122+ | 0.59 EUR |
150+ | 0.48 EUR |
185+ | 0.39 EUR |
205+ | 0.35 EUR |
658+ | 0.11 EUR |
695+ | 0.1 EUR |
STP45N60DM2AG |
![]() |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
STPS1545CT |
![]() |
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5Ax2; TO220AB; Ufmax: 0.5V
Max. off-state voltage: 45V
Max. load current: 20A
Max. forward voltage: 0.5V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 150A
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Mounting: THT
Case: TO220AB
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5Ax2; TO220AB; Ufmax: 0.5V
Max. off-state voltage: 45V
Max. load current: 20A
Max. forward voltage: 0.5V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 150A
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Mounting: THT
Case: TO220AB
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
75+ | 0.96 EUR |
86+ | 0.84 EUR |
182+ | 0.39 EUR |
193+ | 0.37 EUR |
STPS1545FP |
![]() |
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220FP-2; Ufmax: 0.57V
Max. off-state voltage: 45V
Max. load current: 30A
Max. forward voltage: 0.57V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220FP-2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220FP-2; Ufmax: 0.57V
Max. off-state voltage: 45V
Max. load current: 30A
Max. forward voltage: 0.57V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220FP-2
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
57+ | 1.27 EUR |
85+ | 0.85 EUR |
122+ | 0.59 EUR |
129+ | 0.56 EUR |
STPS24045TV |
![]() |
Hersteller: STMicroelectronics
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; ISOTOP; screw
Max. forward impulse current: 1.15kA
Max. off-state voltage: 45V
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Max. load current: 240A
Type of semiconductor module: diode
Max. forward voltage: 0.68V
Load current: 120A x2
Semiconductor structure: double independent
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; ISOTOP; screw
Max. forward impulse current: 1.15kA
Max. off-state voltage: 45V
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Max. load current: 240A
Type of semiconductor module: diode
Max. forward voltage: 0.68V
Load current: 120A x2
Semiconductor structure: double independent
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH