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LMV822IST STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A0E0AB7BE0D2&compId=lmv822.pdf?ci_sign=89708e67df4cf741d3d1875839c64af03365d82a Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; miniSO8; 2.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 2
Case: miniSO8
Operating temperature: -40...125°C
Input offset voltage: 4mV
Integrated circuit features: low power; rail-to-rail
Input bias current: 0.18µA
Input offset current: 50nA
Slew rate: 1.9V/μs
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
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LMV822IYST STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A0E0AB7D20D2&compId=lmv822.pdf?ci_sign=d8add3df60475e1b52beb6a5157d4e1186af2f45 Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; miniSO8; 2.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 2
Case: miniSO8
Operating temperature: -40...125°C
Input offset voltage: 4mV
Integrated circuit features: low power; rail-to-rail
Input bias current: 0.18µA
Application: automotive industry
Input offset current: 50nA
Slew rate: 1.9V/μs
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SCTH100N65G2-7AG STMicroelectronics scth100n65g2-7ag.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 95A; Idm: 260A; 360W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 95A
Pulsed drain current: 260A
Power dissipation: 360W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 162nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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SCTW100N65G2AG STMicroelectronics sctw100n65g2ag.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 280A; 420W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Pulsed drain current: 280A
Power dissipation: 420W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 162nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
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ST4485EBDR ST4485EBDR STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A43426B860D2&compId=st4485eb.pdf?ci_sign=bc55cc4d0a917fc164759bce95fa77bec35fe5b3 Category: RS232 / RS422 / RS485 - integr. circ.
Description: IC: interface; transceiver; half duplex,RS422,RS485; 20Mbps; SO8
Mounting: SMD
Interface: half duplex; RS422; RS485
Type of integrated circuit: interface
Case: SO8
Kind of integrated circuit: transceiver
Operating temperature: -40...105°C
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3...3.6V DC
Data transfer rate: 20Mbps
Produkt ist nicht verfügbar
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STGW30H60DFB STGW30H60DFB STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A9BCDF98C0D2&compId=stgw30h60dfb.pdf?ci_sign=4a35b0e4dbdcd5731a839f704c5683cf3ba4fc12 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Power dissipation: 260W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 149nC
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.15 EUR
25+2.87 EUR
30+2.49 EUR
120+1.84 EUR
Mindestbestellmenge: 23
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STGP30H60DF STMicroelectronics en.DM00040343.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Power dissipation: 260W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 105nC
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.86 EUR
28+2.57 EUR
30+2.39 EUR
50+2.27 EUR
150+2.04 EUR
Mindestbestellmenge: 25
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STPS30H60CFP STPS30H60CFP STMicroelectronics en.CD00093443.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.82V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.82V
Max. load current: 30A
Max. forward impulse current: 230A
Leakage current: 25mA
Kind of package: tube
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STGP30H60DFB STMicroelectronics en.DM00125119.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Power dissipation: 260W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 149nC
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FERD30H60CTS FERD30H60CTS STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB90B41EDB85ED47C2630CE0C7&compId=FERD30H60C.pdf?ci_sign=446da095dce47a4ee3591380b4dd8cf048f772c3 Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 15Ax2; tube; Ifsm: 250A; TO220AB; 500ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.41V
Max. load current: 60A
Max. forward impulse current: 250A
Kind of package: tube
Heatsink thickness: 0.51...0.6mm
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 0.5µs
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STGB30H60DFB STMicroelectronics en.DM00125119.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Power dissipation: 260W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 149nC
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STGB30H60DLLFBAG STMicroelectronics en.DM00336135.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK; ignition systems
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Power dissipation: 260W
Application: ignition systems
Collector-emitter voltage: 600V
Type of transistor: IGBT
Gate charge: 110nC
Produkt ist nicht verfügbar
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STPS30H60CG-TR STMicroelectronics en.CD00093443.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.82V
Max. load current: 30A
Max. forward impulse current: 230A
Leakage current: 25mA
Kind of package: reel; tape
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STPS30H60CT STPS30H60CT STMicroelectronics en.CD00093443.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.82V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.82V
Max. load current: 30A
Max. forward impulse current: 230A
Leakage current: 25mA
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Produkt ist nicht verfügbar
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STGWA30H60DFB STMicroelectronics en.DM00125118.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Power dissipation: 260W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 149nC
Produkt ist nicht verfügbar
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STGWT30H60DFB STMicroelectronics en.DM00125118.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Power dissipation: 260W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 149nC
Produkt ist nicht verfügbar
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STEVAL-ILD004V2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A7648C80E0D2&compId=steval-ild004v2.pdf?ci_sign=c119e36b872962cacb1e6a83871cb50783188acd Category: STM development kits
Description: Dev.kit: evaluation; base board; 50÷60Hz; 3/600W; 110÷230VAC
Power: 3/600W
Kit contents: base board
Components: STGF10NC60KD; STM8S103F2; TS820-600FP
Kind of connector: screw
Kind of circuit: halogen lamp dimmer
Frequency: 50...60Hz
Operating voltage: 110...230V AC
Type of development kit: evaluation
Produkt ist nicht verfügbar
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STISO621TR STMicroelectronics stiso621.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; digital isolator; 3÷5.5VDC; SMD; SO8-W; Ch: 2
Type of integrated circuit: interface
Kind of integrated circuit: digital isolator
Supply voltage: 3...5.5V DC
Mounting: SMD
Case: SO8-W
Operating temperature: -40...125°C
Number of channels: 2
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TS462CPT STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9BE2D1E25C0D2&compId=ts462.pdf?ci_sign=f4ac705f24a09bc9702f10a68071fce3984dd02c Category: SMD operational amplifiers
Description: IC: operational amplifier; 12MHz; Ch: 2; TSSOP8; 2.7÷10VDC; 200nA
Type of integrated circuit: operational amplifier
Bandwidth: 12MHz
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Slew rate: 4V/μs
Operating temperature: -20...70°C
Input offset voltage: 7mV
Voltage supply range: 2.7...10V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input offset current: 200nA
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TS912AIDT TS912AIDT STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE596D566740618C11C&compId=TS912IDT.pdf?ci_sign=0fa337d95cfd7a5d0591c21c5acbc3d091c6dfff Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; SO8; 2.7÷16VDC
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Voltage supply range: 2.7...16V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 2659 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.53 EUR
55+1.3 EUR
61+1.17 EUR
70+1.03 EUR
75+0.96 EUR
100+0.9 EUR
250+0.84 EUR
2500+0.79 EUR
Mindestbestellmenge: 47
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TS912IDT TS912IDT STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE596D566740618C11C&compId=TS912IDT.pdf?ci_sign=0fa337d95cfd7a5d0591c21c5acbc3d091c6dfff description Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; SO8; 2.7÷16VDC
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 12mV
Voltage supply range: 2.7...16V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 4664 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.4 EUR
62+1.17 EUR
68+1.06 EUR
77+0.93 EUR
84+0.86 EUR
100+0.81 EUR
250+0.76 EUR
2500+0.69 EUR
Mindestbestellmenge: 52
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TS912BIDT TS912BIDT STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9BEEC79C7E0D2&compId=ts912b.pdf?ci_sign=92a0fbf4f30443866e006aef63894f6a3a24c9a5 description Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; SO8; 2.7÷16VDC
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.4V/μs
Operating temperature: -40...125°C
Input offset voltage: 2mV
Voltage supply range: 2.7...16V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 1587 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.47 EUR
57+1.26 EUR
63+1.14 EUR
70+1.03 EUR
77+0.93 EUR
100+0.92 EUR
250+0.87 EUR
Mindestbestellmenge: 49
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TS912ID TS912ID STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE596D566740618C11C&compId=TS912IDT.pdf?ci_sign=0fa337d95cfd7a5d0591c21c5acbc3d091c6dfff Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; SO8; 2.7÷16VDC; tube
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 12mV
Voltage supply range: 2.7...16V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: tube
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 1210 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.06 EUR
42+1.72 EUR
46+1.56 EUR
47+1.53 EUR
Mindestbestellmenge: 35
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TS912IYDT TS912IYDT STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9BEEC79CA60D2&compId=ts912.pdf?ci_sign=0c54e149bfbc0c6da1786a33c0b21878312d9a5d Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 2; SO8; 2.7÷16VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 12mV
Voltage supply range: 2.7...16V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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TS912AIYDT TS912AIYDT STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9BEEC79C6A0D2&compId=ts912a.pdf?ci_sign=66aba3b5de517d779d8226a28c8cb2f1176e4dea Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; SO8; 2.7÷16VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.8V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Voltage supply range: 2.7...16V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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TS912BIYDT TS912BIYDT STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9BEEC79C920D2&compId=ts912b.pdf?ci_sign=ca7c57db3783db9a36548654fba33d4d7449a68c Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; 2.7÷16VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.4V/μs
Operating temperature: -40...125°C
Input offset voltage: 3mV
Voltage supply range: 2.7...16V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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STM1001SWX6F STM1001SWX6F STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9ABBB61EA00D2&compId=stm1001.pdf?ci_sign=0b81b1c82f2ff2e9985a0547b86f833bdadd236d Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
Threshold on-voltage: 2.93V
Number of channels: 1
auf Bestellung 2569 Stücke:
Lieferzeit 14-21 Tag (e)
72+1 EUR
98+0.74 EUR
107+0.67 EUR
119+0.6 EUR
250+0.56 EUR
500+0.54 EUR
1000+0.52 EUR
Mindestbestellmenge: 72
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STM811TW16F STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDE91FAC4A105F9E0D5&compId=stm809.pdf?ci_sign=59675b66e811812f9795b8d72f638ddcc740cd4f Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Mounting: SMD
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
Number of channels: 1
Supply voltage: 1.2...5.5V DC
Threshold on-voltage: 3.08V
Integrated circuit features: manual reset
Active logical level: low
Case: SOT143-4
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
221+0.32 EUR
234+0.31 EUR
252+0.28 EUR
277+0.26 EUR
307+0.23 EUR
323+0.22 EUR
1000+0.21 EUR
Mindestbestellmenge: 193
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ULQ2001A ULQ2001A STMicroelectronics en.CD00000180.pdf Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; DIP16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: DIP16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: THT
Operating temperature: -40...105°C
Application: for inductive load
Input voltage: 30V
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
56+1.29 EUR
89+0.81 EUR
130+0.55 EUR
Mindestbestellmenge: 56
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LMV822IST pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A0E0AB7BE0D2&compId=lmv822.pdf?ci_sign=89708e67df4cf741d3d1875839c64af03365d82a
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; miniSO8; 2.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 2
Case: miniSO8
Operating temperature: -40...125°C
Input offset voltage: 4mV
Integrated circuit features: low power; rail-to-rail
Input bias current: 0.18µA
Input offset current: 50nA
Slew rate: 1.9V/μs
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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LMV822IYST pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A0E0AB7D20D2&compId=lmv822.pdf?ci_sign=d8add3df60475e1b52beb6a5157d4e1186af2f45
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 2; miniSO8; 2.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 2
Case: miniSO8
Operating temperature: -40...125°C
Input offset voltage: 4mV
Integrated circuit features: low power; rail-to-rail
Input bias current: 0.18µA
Application: automotive industry
Input offset current: 50nA
Slew rate: 1.9V/μs
Voltage supply range: 2.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SCTH100N65G2-7AG scth100n65g2-7ag.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 95A; Idm: 260A; 360W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 95A
Pulsed drain current: 260A
Power dissipation: 360W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 162nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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SCTW100N65G2AG sctw100n65g2ag.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 280A; 420W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Pulsed drain current: 280A
Power dissipation: 420W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 162nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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ST4485EBDR pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A43426B860D2&compId=st4485eb.pdf?ci_sign=bc55cc4d0a917fc164759bce95fa77bec35fe5b3
ST4485EBDR
Hersteller: STMicroelectronics
Category: RS232 / RS422 / RS485 - integr. circ.
Description: IC: interface; transceiver; half duplex,RS422,RS485; 20Mbps; SO8
Mounting: SMD
Interface: half duplex; RS422; RS485
Type of integrated circuit: interface
Case: SO8
Kind of integrated circuit: transceiver
Operating temperature: -40...105°C
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3...3.6V DC
Data transfer rate: 20Mbps
Produkt ist nicht verfügbar
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STGW30H60DFB pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A9BCDF98C0D2&compId=stgw30h60dfb.pdf?ci_sign=4a35b0e4dbdcd5731a839f704c5683cf3ba4fc12
STGW30H60DFB
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Power dissipation: 260W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 149nC
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.15 EUR
25+2.87 EUR
30+2.49 EUR
120+1.84 EUR
Mindestbestellmenge: 23
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STGP30H60DF en.DM00040343.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Power dissipation: 260W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 105nC
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
28+2.57 EUR
30+2.39 EUR
50+2.27 EUR
150+2.04 EUR
Mindestbestellmenge: 25
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STPS30H60CFP en.CD00093443.pdf
STPS30H60CFP
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.82V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.82V
Max. load current: 30A
Max. forward impulse current: 230A
Leakage current: 25mA
Kind of package: tube
Produkt ist nicht verfügbar
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STGP30H60DFB en.DM00125119.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Power dissipation: 260W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 149nC
Produkt ist nicht verfügbar
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FERD30H60CTS pVersion=0046&contRep=ZT&docId=005056AB90B41EDB85ED47C2630CE0C7&compId=FERD30H60C.pdf?ci_sign=446da095dce47a4ee3591380b4dd8cf048f772c3
FERD30H60CTS
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 15Ax2; tube; Ifsm: 250A; TO220AB; 500ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.41V
Max. load current: 60A
Max. forward impulse current: 250A
Kind of package: tube
Heatsink thickness: 0.51...0.6mm
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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STGB30H60DFB en.DM00125119.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Power dissipation: 260W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 149nC
Produkt ist nicht verfügbar
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STGB30H60DLLFBAG en.DM00336135.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK; ignition systems
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Power dissipation: 260W
Application: ignition systems
Collector-emitter voltage: 600V
Type of transistor: IGBT
Gate charge: 110nC
Produkt ist nicht verfügbar
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STPS30H60CG-TR en.CD00093443.pdf
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.82V
Max. load current: 30A
Max. forward impulse current: 230A
Leakage current: 25mA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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STPS30H60CT en.CD00093443.pdf
STPS30H60CT
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.82V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.82V
Max. load current: 30A
Max. forward impulse current: 230A
Leakage current: 25mA
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Produkt ist nicht verfügbar
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STGWA30H60DFB en.DM00125118.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Power dissipation: 260W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 149nC
Produkt ist nicht verfügbar
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STGWT30H60DFB en.DM00125118.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Power dissipation: 260W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 149nC
Produkt ist nicht verfügbar
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STEVAL-ILD004V2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A7648C80E0D2&compId=steval-ild004v2.pdf?ci_sign=c119e36b872962cacb1e6a83871cb50783188acd
Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; base board; 50÷60Hz; 3/600W; 110÷230VAC
Power: 3/600W
Kit contents: base board
Components: STGF10NC60KD; STM8S103F2; TS820-600FP
Kind of connector: screw
Kind of circuit: halogen lamp dimmer
Frequency: 50...60Hz
Operating voltage: 110...230V AC
Type of development kit: evaluation
Produkt ist nicht verfügbar
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STISO621TR stiso621.pdf
Hersteller: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: interface; digital isolator; 3÷5.5VDC; SMD; SO8-W; Ch: 2
Type of integrated circuit: interface
Kind of integrated circuit: digital isolator
Supply voltage: 3...5.5V DC
Mounting: SMD
Case: SO8-W
Operating temperature: -40...125°C
Number of channels: 2
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TS462CPT pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9BE2D1E25C0D2&compId=ts462.pdf?ci_sign=f4ac705f24a09bc9702f10a68071fce3984dd02c
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 12MHz; Ch: 2; TSSOP8; 2.7÷10VDC; 200nA
Type of integrated circuit: operational amplifier
Bandwidth: 12MHz
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Slew rate: 4V/μs
Operating temperature: -20...70°C
Input offset voltage: 7mV
Voltage supply range: 2.7...10V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
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TS912AIDT pVersion=0046&contRep=ZT&docId=005056AB752F1EE596D566740618C11C&compId=TS912IDT.pdf?ci_sign=0fa337d95cfd7a5d0591c21c5acbc3d091c6dfff
TS912AIDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; SO8; 2.7÷16VDC
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Voltage supply range: 2.7...16V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 2659 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.53 EUR
55+1.3 EUR
61+1.17 EUR
70+1.03 EUR
75+0.96 EUR
100+0.9 EUR
250+0.84 EUR
2500+0.79 EUR
Mindestbestellmenge: 47
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TS912IDT description pVersion=0046&contRep=ZT&docId=005056AB752F1EE596D566740618C11C&compId=TS912IDT.pdf?ci_sign=0fa337d95cfd7a5d0591c21c5acbc3d091c6dfff
TS912IDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; SO8; 2.7÷16VDC
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 12mV
Voltage supply range: 2.7...16V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 4664 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
62+1.17 EUR
68+1.06 EUR
77+0.93 EUR
84+0.86 EUR
100+0.81 EUR
250+0.76 EUR
2500+0.69 EUR
Mindestbestellmenge: 52
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TS912BIDT description pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9BEEC79C7E0D2&compId=ts912b.pdf?ci_sign=92a0fbf4f30443866e006aef63894f6a3a24c9a5
TS912BIDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; SO8; 2.7÷16VDC
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.4V/μs
Operating temperature: -40...125°C
Input offset voltage: 2mV
Voltage supply range: 2.7...16V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 1587 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
57+1.26 EUR
63+1.14 EUR
70+1.03 EUR
77+0.93 EUR
100+0.92 EUR
250+0.87 EUR
Mindestbestellmenge: 49
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TS912ID pVersion=0046&contRep=ZT&docId=005056AB752F1EE596D566740618C11C&compId=TS912IDT.pdf?ci_sign=0fa337d95cfd7a5d0591c21c5acbc3d091c6dfff
TS912ID
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; SO8; 2.7÷16VDC; tube
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 12mV
Voltage supply range: 2.7...16V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: tube
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 1210 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.06 EUR
42+1.72 EUR
46+1.56 EUR
47+1.53 EUR
Mindestbestellmenge: 35
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TS912IYDT pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9BEEC79CA60D2&compId=ts912.pdf?ci_sign=0c54e149bfbc0c6da1786a33c0b21878312d9a5d
TS912IYDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 2; SO8; 2.7÷16VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 12mV
Voltage supply range: 2.7...16V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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TS912AIYDT pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9BEEC79C6A0D2&compId=ts912a.pdf?ci_sign=66aba3b5de517d779d8226a28c8cb2f1176e4dea
TS912AIYDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; SO8; 2.7÷16VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.8V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Voltage supply range: 2.7...16V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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TS912BIYDT pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9BEEC79C920D2&compId=ts912b.pdf?ci_sign=ca7c57db3783db9a36548654fba33d4d7449a68c
TS912BIYDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; 2.7÷16VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.4V/μs
Operating temperature: -40...125°C
Input offset voltage: 3mV
Voltage supply range: 2.7...16V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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STM1001SWX6F pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9ABBB61EA00D2&compId=stm1001.pdf?ci_sign=0b81b1c82f2ff2e9985a0547b86f833bdadd236d
STM1001SWX6F
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
Threshold on-voltage: 2.93V
Number of channels: 1
auf Bestellung 2569 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
98+0.74 EUR
107+0.67 EUR
119+0.6 EUR
250+0.56 EUR
500+0.54 EUR
1000+0.52 EUR
Mindestbestellmenge: 72
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STM811TW16F pVersion=0046&contRep=ZT&docId=005056AB281E1EDE91FAC4A105F9E0D5&compId=stm809.pdf?ci_sign=59675b66e811812f9795b8d72f638ddcc740cd4f
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Mounting: SMD
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
Number of channels: 1
Supply voltage: 1.2...5.5V DC
Threshold on-voltage: 3.08V
Integrated circuit features: manual reset
Active logical level: low
Case: SOT143-4
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
221+0.32 EUR
234+0.31 EUR
252+0.28 EUR
277+0.26 EUR
307+0.23 EUR
323+0.22 EUR
1000+0.21 EUR
Mindestbestellmenge: 193
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ULQ2001A en.CD00000180.pdf
ULQ2001A
Hersteller: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; DIP16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: DIP16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: THT
Operating temperature: -40...105°C
Application: for inductive load
Input voltage: 30V
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
89+0.81 EUR
130+0.55 EUR
Mindestbestellmenge: 56
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