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STLBC01QTR STLBC01QTR STMicroelectronics STLBC01.pdf Description: IC LOW ENERGY CTLR 24VFQFPN
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STLBC01QTR STLBC01QTR STMicroelectronics STLBC01.pdf Description: IC LOW ENERGY CTLR 24VFQFPN
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STH270N4F3-2 STH270N4F3-2 STMicroelectronics Description: MOSFET N-CH 40V 180A H2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Tape & Reel (TR)
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STL6N2VH5 STL6N2VH5 STMicroelectronics en.DM00053721.pdf Description: MOSFET N-CH 20V POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerFlat™ (2x2)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 2.4W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
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STQ1HN60K3-AP STQ1HN60K3-AP STMicroelectronics STQ1HN60K3-AP.pdf Description: MOSFET N-CH 600V 400MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
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STL45N65M5 STL45N65M5 STMicroelectronics en.DM00058185.pdf Description: MOSFET N-CH 650V 22.5A PWRFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
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STL8N80K5 STL8N80K5 STMicroelectronics en.DM00072732.pdf Description: MOSFET N-CH 800V 4.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
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STWA88N65M5 STWA88N65M5 STMicroelectronics en.DM00042858.pdf Description: MOSFET N-CH 650V 84A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8825 pF @ 100 V
auf Bestellung 540 Stücke:
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30+18.2 EUR
120+15.68 EUR
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STF13N80K5 STF13N80K5 STMicroelectronics en.DM00079143.pdf Description: MOSFET N-CH 800V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
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3+9.26 EUR
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100+4.36 EUR
500+3.59 EUR
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STGP20V60DF STGP20V60DF STMicroelectronics en.DM00079434.pdf Description: IGBT TRENCH FS 600V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
auf Bestellung 796 Stücke:
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5+5.13 EUR
50+2.53 EUR
100+2.27 EUR
500+1.83 EUR
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STGP30V60DF STGP30V60DF STMicroelectronics stgb30v60df.pdf Description: IGBT TRENCH FS 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
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STGW20V60DF STGW20V60DF STMicroelectronics en.DM00079434.pdf Description: IGBT TRENCH FS 600V 40A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
auf Bestellung 389 Stücke:
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3+7.91 EUR
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STGW30H60DF STGW30H60DF STMicroelectronics en.DM00040343.pdf Description: IGBT TRENCH FS 600V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
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STGW40V60DF STGW40V60DF STMicroelectronics en.DM00080360.pdf Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
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STGW60V60DF STGW60V60DF STMicroelectronics en.DM00074810.pdf Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/208ns
Switching Energy: 750µJ (on), 550µJ (off)
Test Condition: 400V, 60A, 4.7Ohm, 15V
Gate Charge: 334 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 375 W
auf Bestellung 245 Stücke:
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3+9.29 EUR
30+5.16 EUR
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STGWT20V60DF STGWT20V60DF STMicroelectronics en.DM00079434.pdf Description: IGBT TRENCH FS 600V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
Produkt ist nicht verfügbar
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STGWT30V60DF STGWT30V60DF STMicroelectronics stgb30v60df.pdf Description: IGBT TRENCH FS 600V 60A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
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STGWT40V60DLF STGWT40V60DLF STMicroelectronics Description: IGBT TRENCH FS 600V 80A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/208ns
Switching Energy: 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Produkt ist nicht verfügbar
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STI24N60M2 STI24N60M2 STMicroelectronics en.DM00070788.pdf Description: MOSFET N-CH 600V 18A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
auf Bestellung 860 Stücke:
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4+5.84 EUR
50+2.89 EUR
100+2.61 EUR
500+2.11 EUR
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STW19NM60N STW19NM60N STMicroelectronics en.DM00080239.pdf Description: MOSFET N-CH 600V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Qualification: AEC-Q101
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STD25NF20 STD25NF20 STMicroelectronics en.DM00079534.pdf Description: MOSFET N-CH 200V 18A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1503 Stücke:
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5+4.24 EUR
10+2.71 EUR
100+1.83 EUR
500+1.46 EUR
1000+1.34 EUR
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STH270N4F3-2 STH270N4F3-2 STMicroelectronics Description: MOSFET N-CH 40V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STL45N65M5 STL45N65M5 STMicroelectronics en.DM00058185.pdf Description: MOSFET N-CH 650V 22.5A PWRFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Produkt ist nicht verfügbar
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STL8N80K5 STL8N80K5 STMicroelectronics en.DM00072732.pdf Description: MOSFET N-CH 800V 4.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 1682 Stücke:
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3+7.22 EUR
10+4.74 EUR
100+3.31 EUR
500+2.71 EUR
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STGIPS30C60-H STGIPS30C60-H STMicroelectronics Description: MOD IPM SLLIMM 30A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 600 V
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STL6N2VH5 STL6N2VH5 STMicroelectronics en.DM00053721.pdf Description: MOSFET N-CH 20V POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerFlat™ (2x2)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 2.4W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
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STT5N2VH5 STT5N2VH5 STMicroelectronics en.DM00111322.pdf Description: MOSFET N-CH 20V SOT23-6
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
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STT5N2VH5 STT5N2VH5 STMicroelectronics en.DM00111322.pdf Description: MOSFET N-CH 20V SOT23-6
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
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STGIPS20C60 STMicroelectronics Description: IGBT IPM 600V 20A 25-PWRDIP MOD
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
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STGW40V60DLF STMicroelectronics Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/208ns
Switching Energy: 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
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STGWT40V60DF STGWT40V60DF STMicroelectronics en.DM00080360.pdf Description: IGBT TRENCH FS 600V 80A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
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STS3P6F6 STS3P6F6 STMicroelectronics en.DM00080977.pdf Description: MOSFET P-CH 60V 3A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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STGW30V60DF STGW30V60DF STMicroelectronics stgb30v60df.pdf Description: IGBT TRENCH FS 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
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STP13N80K5 STP13N80K5 STMicroelectronics en.DM00079143.pdf Description: MOSFET N-CH 800V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
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STS3P6F6 STS3P6F6 STMicroelectronics en.DM00080977.pdf Description: MOSFET P-CH 60V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
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STU1HN60K3 STU1HN60K3 STMicroelectronics en.DM00080877.pdf Description: MOSFET N-CH 600V 1.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
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STD25NF20 STD25NF20 STMicroelectronics en.DM00079534.pdf Description: MOSFET N-CH 200V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Qualification: AEC-Q101
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Q7525663 Q7525663 STMicroelectronics Description: KIT ESD PROTECT 16 VALUE 10EA
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Q7525688 Q7525688 STMicroelectronics Description: KIT ESD PROTECT 10 VALUE 10EA
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Q7525712 Q7525712 STMicroelectronics Description: KIT ESD PROTECT 16 VALUE 10EA
Packaging: Box
Mounting Type: Surface Mount
Quantity: 160 Pieces (16 Values - 10 Each)
Kit Type: ESD Protection
Voltage - Breakdown: 6V ~ 15V
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Q7668862 Q7668862 STMicroelectronics Description: KIT ESD PROTECT 16 VALUE 10EA
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Q7521514 Q7521514 STMicroelectronics Description: KIT ESD PROTECT 7 VALUE 10EA
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Q7525674 Q7525674 STMicroelectronics Description: KIT ESD PROTECT 13 VALUE 10EA
Packaging: Box
Mounting Type: Surface Mount
Quantity: 130 Pieces (13 Values - 10 Each)
Kit Type: ESD Protection
Voltage - Breakdown: 5V ~ 14.5V
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Q7525700 Q7525700 STMicroelectronics Description: KIT ESD PROTECT 16 VALUE 10EA
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M41ST85WMX6TR M41ST85WMX6TR STMicroelectronics en.CD00002304.pdf Description: IC RTC CLOCK/CALENDAR I2C 28SO
Packaging: Cut Tape (CT)
Features: Alarm, Leap Year, NVSRAM, Square Wave Output, Supervisor, Watchdog Timer
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 44B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Time Format: HH:MM:SS:hh (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 28-SO
Voltage - Supply, Battery: 2.5V ~ 3.5V
Current - Timekeeping (Max): 0.5mA @ 2.7V ~ 3.6V
Part Status: Active
DigiKey Programmable: Not Verified
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STBLC01QTR STBLC01QTR STMicroelectronics DM00051480.pdf Description: IC BLUETOOTH CTLR 24VFQFPN
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STCC2540IQTR STCC2540IQTR STMicroelectronics en.DM00086386.pdf Description: IC PWR SWITCH N-CH 1:1 16VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Rds On (Typ): 65mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-VFQFPN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, UVLO
Part Status: Active
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STCC5021IQTR STCC5021IQTR STMicroelectronics STCC5011,21.pdf Description: IC PWR SWITCH N-CH 1:1 16VFQFPN
Part Status: Obsolete
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 16-VFQFPN (3x3)
Ratio - Input:Output: 1:1
Current - Output (Max): 2.8A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.5V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 65mOhm
Operating Temperature: -40°C ~ 125°C (TJ)
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 16-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
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TS882IST TS882IST STMicroelectronics en.DM00073871.pdf Description: IC COMPARATOR 2 GEN PUR 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.1V ~ 5.5V
Supplier Device Package: 8-MiniSO
Propagation Delay (Max): 16µs
Current - Quiescent (Max): 500nA
Voltage - Input Offset (Max): 6mV @ 5V
Current - Input Bias (Max): 10pA
CMRR, PSRR (Typ): 78dB CMRR
Hysteresis: 4.2mV
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TSU101ICT TSU101ICT STMicroelectronics en.DM00078536.pdf Description: IC OPAMP GP 1 CIRCUIT SC70-5
Current - Output / Channel: 11 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SC-70-5
Voltage - Input Offset: 3 mV
Current - Input Bias: 5 pA
Gain Bandwidth Product: 9 kHz
Slew Rate: 0.003V/µs
Current - Supply: 650nA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
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TSU101ILT TSU101ILT STMicroelectronics en.DM00078536.pdf Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650nA
Slew Rate: 0.003V/µs
Gain Bandwidth Product: 9 kHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: SOT-23-5
Number of Circuits: 1
Current - Output / Channel: 11 mA
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 5.5 V
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TSU101RICT TSU101RICT STMicroelectronics en.DM00078536.pdf Description: IC OPAMP GP 1 CIRCUIT SC70-5
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Current - Output / Channel: 11 mA
Number of Circuits: 1
Supplier Device Package: SC-70-5
Voltage - Input Offset: 3 mV
Current - Input Bias: 5 pA
Gain Bandwidth Product: 9 kHz
Slew Rate: 0.003V/µs
Current - Supply: 650nA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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TSU101RILT TSU101RILT STMicroelectronics en.DM00078536.pdf Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650nA
Slew Rate: 0.003V/µs
Gain Bandwidth Product: 9 kHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: SOT-23-5
Number of Circuits: 1
Current - Output / Channel: 11 mA
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 5.5 V
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TSV734IQ4T TSV734IQ4T STMicroelectronics en.DM00065944.pdf Description: IC CMOS 4 CIRCUIT 16QFN
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Current - Output / Channel: 68 mA
Number of Circuits: 4
Part Status: Active
Supplier Device Package: 16-QFN (3x3)
Voltage - Input Offset: 200 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 900 kHz
Slew Rate: 0.35V/µs
Current - Supply: 58µA (x4 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
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100+3 EUR
250+2.81 EUR
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TSX921ILT TSX921ILT STMicroelectronics en.DM00078379.pdf Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 2.8mA
Slew Rate: 17V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 4 mV
Supplier Device Package: SOT-23-5
Number of Circuits: 1
Current - Output / Channel: 74 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 16 V
auf Bestellung 4970 Stücke:
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12+1.84 EUR
25+1.68 EUR
100+1.49 EUR
250+1.39 EUR
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TSX9291ILT TSX9291ILT STMicroelectronics en.DM00082871.pdf Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 2.8mA
Slew Rate: 27V/µs
Gain Bandwidth Product: 16 MHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 4 mV
Supplier Device Package: SOT-23-5
Number of Circuits: 1
Current - Output / Channel: 74 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 16 V
auf Bestellung 3117 Stücke:
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100+1.54 EUR
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STBLC01QTR STBLC01QTR STMicroelectronics DM00051480.pdf Description: IC BLUETOOTH CTLR 24VFQFPN
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STBLC01QTR STBLC01QTR STMicroelectronics DM00051480.pdf Description: IC BLUETOOTH CTLR 24VFQFPN
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STCC2540IQTR STCC2540IQTR STMicroelectronics en.DM00086386.pdf Description: IC PWR SWITCH N-CH 1:1 16VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Rds On (Typ): 65mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-VFQFPN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, UVLO
Part Status: Active
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STCC5021IQTR STCC5021IQTR STMicroelectronics STCC5011,21.pdf Description: IC PWR SWITCH N-CH 1:1 16VFQFPN
Part Status: Obsolete
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 16-VFQFPN (3x3)
Ratio - Input:Output: 1:1
Current - Output (Max): 2.8A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.5V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 65mOhm
Operating Temperature: -40°C ~ 125°C (TJ)
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 16-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STLBC01QTR STLBC01.pdf
STLBC01QTR
Hersteller: STMicroelectronics
Description: IC LOW ENERGY CTLR 24VFQFPN
Produkt ist nicht verfügbar
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STLBC01QTR STLBC01.pdf
STLBC01QTR
Hersteller: STMicroelectronics
Description: IC LOW ENERGY CTLR 24VFQFPN
Produkt ist nicht verfügbar
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STH270N4F3-2
STH270N4F3-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STL6N2VH5 en.DM00053721.pdf
STL6N2VH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 20V POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerFlat™ (2x2)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 2.4W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STQ1HN60K3-AP STQ1HN60K3-AP.pdf
STQ1HN60K3-AP
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 400MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Produkt ist nicht verfügbar
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STL45N65M5 en.DM00058185.pdf
STL45N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 22.5A PWRFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Produkt ist nicht verfügbar
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STL8N80K5 en.DM00072732.pdf
STL8N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 4.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Produkt ist nicht verfügbar
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STWA88N65M5 en.DM00042858.pdf
STWA88N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 84A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8825 pF @ 100 V
auf Bestellung 540 Stücke:
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1+29.62 EUR
30+18.2 EUR
120+15.68 EUR
510+14.52 EUR
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STF13N80K5 en.DM00079143.pdf
STF13N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 890 Stücke:
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3+9.26 EUR
50+4.78 EUR
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STGP20V60DF en.DM00079434.pdf
STGP20V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
auf Bestellung 796 Stücke:
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AnzahlPrivatkunde
5+5.13 EUR
50+2.53 EUR
100+2.27 EUR
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STGP30V60DF stgb30v60df.pdf
STGP30V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
Produkt ist nicht verfügbar
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STGW20V60DF en.DM00079434.pdf
STGW20V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 40A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
auf Bestellung 389 Stücke:
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3+7.91 EUR
30+4.37 EUR
120+3.58 EUR
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STGW30H60DF en.DM00040343.pdf
STGW30H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Produkt ist nicht verfügbar
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STGW40V60DF en.DM00080360.pdf
STGW40V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
auf Bestellung 212 Stücke:
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3+8.08 EUR
30+4.46 EUR
120+3.65 EUR
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STGW60V60DF en.DM00074810.pdf
STGW60V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/208ns
Switching Energy: 750µJ (on), 550µJ (off)
Test Condition: 400V, 60A, 4.7Ohm, 15V
Gate Charge: 334 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 375 W
auf Bestellung 245 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.29 EUR
30+5.16 EUR
120+4.26 EUR
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STGWT20V60DF en.DM00079434.pdf
STGWT20V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
Produkt ist nicht verfügbar
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STGWT30V60DF stgb30v60df.pdf
STGWT30V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
Produkt ist nicht verfügbar
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STGWT40V60DLF
STGWT40V60DLF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/208ns
Switching Energy: 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Produkt ist nicht verfügbar
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STI24N60M2 en.DM00070788.pdf
STI24N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
auf Bestellung 860 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.84 EUR
50+2.89 EUR
100+2.61 EUR
500+2.11 EUR
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STW19NM60N en.DM00080239.pdf
STW19NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STD25NF20 en.DM00079534.pdf
STD25NF20
Hersteller: STMicroelectronics
Description: MOSFET N-CH 200V 18A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1503 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.24 EUR
10+2.71 EUR
100+1.83 EUR
500+1.46 EUR
1000+1.34 EUR
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STH270N4F3-2
STH270N4F3-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STL45N65M5 en.DM00058185.pdf
STL45N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 22.5A PWRFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Produkt ist nicht verfügbar
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STL8N80K5 en.DM00072732.pdf
STL8N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 4.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 1682 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.22 EUR
10+4.74 EUR
100+3.31 EUR
500+2.71 EUR
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STGIPS30C60-H
STGIPS30C60-H
Hersteller: STMicroelectronics
Description: MOD IPM SLLIMM 30A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STL6N2VH5 en.DM00053721.pdf
STL6N2VH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 20V POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerFlat™ (2x2)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 2.4W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 2034 Stücke:
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AnzahlPrivatkunde
12+1.88 EUR
18+1.18 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.54 EUR
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STT5N2VH5 en.DM00111322.pdf
STT5N2VH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 20V SOT23-6
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
auf Bestellung 10626 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.59 EUR
22+1 EUR
100+0.64 EUR
500+0.49 EUR
1000+0.44 EUR
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STT5N2VH5 en.DM00111322.pdf
STT5N2VH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 20V SOT23-6
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
3000+0.38 EUR
6000+0.35 EUR
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STGIPS20C60
Hersteller: STMicroelectronics
Description: IGBT IPM 600V 20A 25-PWRDIP MOD
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGW40V60DLF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/208ns
Switching Energy: 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Produkt ist nicht verfügbar
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STGWT40V60DF en.DM00080360.pdf
STGWT40V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Produkt ist nicht verfügbar
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STS3P6F6 en.DM00080977.pdf
STS3P6F6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 60V 3A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STGW30V60DF stgb30v60df.pdf
STGW30V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.08 EUR
30+3.88 EUR
120+3.17 EUR
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STP13N80K5 en.DM00079143.pdf
STP13N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 474 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.31 EUR
50+3.71 EUR
100+3.37 EUR
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STS3P6F6 en.DM00080977.pdf
STS3P6F6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 60V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
Produkt ist nicht verfügbar
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STU1HN60K3 en.DM00080877.pdf
STU1HN60K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 1.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Produkt ist nicht verfügbar
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STD25NF20 en.DM00079534.pdf
STD25NF20
Hersteller: STMicroelectronics
Description: MOSFET N-CH 200V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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Q7525663
Q7525663
Hersteller: STMicroelectronics
Description: KIT ESD PROTECT 16 VALUE 10EA
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
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Q7525688
Q7525688
Hersteller: STMicroelectronics
Description: KIT ESD PROTECT 10 VALUE 10EA
auf Bestellung 9 Stücke:
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Q7525712
Q7525712
Hersteller: STMicroelectronics
Description: KIT ESD PROTECT 16 VALUE 10EA
Packaging: Box
Mounting Type: Surface Mount
Quantity: 160 Pieces (16 Values - 10 Each)
Kit Type: ESD Protection
Voltage - Breakdown: 6V ~ 15V
Produkt ist nicht verfügbar
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Q7668862
Q7668862
Hersteller: STMicroelectronics
Description: KIT ESD PROTECT 16 VALUE 10EA
auf Bestellung 7 Stücke:
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Q7521514
Q7521514
Hersteller: STMicroelectronics
Description: KIT ESD PROTECT 7 VALUE 10EA
auf Bestellung 4 Stücke:
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Q7525674
Q7525674
Hersteller: STMicroelectronics
Description: KIT ESD PROTECT 13 VALUE 10EA
Packaging: Box
Mounting Type: Surface Mount
Quantity: 130 Pieces (13 Values - 10 Each)
Kit Type: ESD Protection
Voltage - Breakdown: 5V ~ 14.5V
Produkt ist nicht verfügbar
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Q7525700
Q7525700
Hersteller: STMicroelectronics
Description: KIT ESD PROTECT 16 VALUE 10EA
auf Bestellung 10 Stücke:
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M41ST85WMX6TR en.CD00002304.pdf
M41ST85WMX6TR
Hersteller: STMicroelectronics
Description: IC RTC CLOCK/CALENDAR I2C 28SO
Packaging: Cut Tape (CT)
Features: Alarm, Leap Year, NVSRAM, Square Wave Output, Supervisor, Watchdog Timer
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 44B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Time Format: HH:MM:SS:hh (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 28-SO
Voltage - Supply, Battery: 2.5V ~ 3.5V
Current - Timekeeping (Max): 0.5mA @ 2.7V ~ 3.6V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3307 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.65 EUR
10+12.95 EUR
25+12.03 EUR
100+11.02 EUR
250+10.53 EUR
500+10.25 EUR
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STBLC01QTR DM00051480.pdf
STBLC01QTR
Hersteller: STMicroelectronics
Description: IC BLUETOOTH CTLR 24VFQFPN
auf Bestellung 2990 Stücke:
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STCC2540IQTR en.DM00086386.pdf
STCC2540IQTR
Hersteller: STMicroelectronics
Description: IC PWR SWITCH N-CH 1:1 16VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Rds On (Typ): 65mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-VFQFPN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, UVLO
Part Status: Active
auf Bestellung 38330 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.33 EUR
10+3.21 EUR
25+2.93 EUR
100+2.62 EUR
250+2.48 EUR
500+2.4 EUR
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STCC5021IQTR STCC5011,21.pdf
STCC5021IQTR
Hersteller: STMicroelectronics
Description: IC PWR SWITCH N-CH 1:1 16VFQFPN
Part Status: Obsolete
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 16-VFQFPN (3x3)
Ratio - Input:Output: 1:1
Current - Output (Max): 2.8A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.5V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 65mOhm
Operating Temperature: -40°C ~ 125°C (TJ)
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 16-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TS882IST en.DM00073871.pdf
TS882IST
Hersteller: STMicroelectronics
Description: IC COMPARATOR 2 GEN PUR 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.1V ~ 5.5V
Supplier Device Package: 8-MiniSO
Propagation Delay (Max): 16µs
Current - Quiescent (Max): 500nA
Voltage - Input Offset (Max): 6mV @ 5V
Current - Input Bias (Max): 10pA
CMRR, PSRR (Typ): 78dB CMRR
Hysteresis: 4.2mV
auf Bestellung 7232 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.17 EUR
10+2.32 EUR
25+2.11 EUR
100+1.88 EUR
250+1.77 EUR
500+1.7 EUR
1000+1.69 EUR
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TSU101ICT en.DM00078536.pdf
TSU101ICT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SC70-5
Current - Output / Channel: 11 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SC-70-5
Voltage - Input Offset: 3 mV
Current - Input Bias: 5 pA
Gain Bandwidth Product: 9 kHz
Slew Rate: 0.003V/µs
Current - Supply: 650nA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
auf Bestellung 2337 Stücke:
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9+2.56 EUR
12+1.86 EUR
25+1.68 EUR
100+1.49 EUR
250+1.39 EUR
500+1.33 EUR
1000+1.3 EUR
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TSU101ILT en.DM00078536.pdf
TSU101ILT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650nA
Slew Rate: 0.003V/µs
Gain Bandwidth Product: 9 kHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: SOT-23-5
Number of Circuits: 1
Current - Output / Channel: 11 mA
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 1492 Stücke:
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9+2.43 EUR
12+1.77 EUR
25+1.61 EUR
100+1.43 EUR
250+1.33 EUR
500+1.29 EUR
1000+1.26 EUR
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TSU101RICT en.DM00078536.pdf
TSU101RICT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SC70-5
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Current - Output / Channel: 11 mA
Number of Circuits: 1
Supplier Device Package: SC-70-5
Voltage - Input Offset: 3 mV
Current - Input Bias: 5 pA
Gain Bandwidth Product: 9 kHz
Slew Rate: 0.003V/µs
Current - Supply: 650nA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 2904 Stücke:
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AnzahlPrivatkunde
9+2.56 EUR
12+1.86 EUR
25+1.68 EUR
100+1.49 EUR
250+1.39 EUR
500+1.33 EUR
1000+1.3 EUR
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TSU101RILT en.DM00078536.pdf
TSU101RILT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650nA
Slew Rate: 0.003V/µs
Gain Bandwidth Product: 9 kHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: SOT-23-5
Number of Circuits: 1
Current - Output / Channel: 11 mA
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 614 Stücke:
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AnzahlPrivatkunde
10+2.28 EUR
13+1.65 EUR
25+1.5 EUR
100+1.32 EUR
250+1.24 EUR
500+1.19 EUR
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TSV734IQ4T en.DM00065944.pdf
TSV734IQ4T
Hersteller: STMicroelectronics
Description: IC CMOS 4 CIRCUIT 16QFN
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Current - Output / Channel: 68 mA
Number of Circuits: 4
Part Status: Active
Supplier Device Package: 16-QFN (3x3)
Voltage - Input Offset: 200 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 900 kHz
Slew Rate: 0.35V/µs
Current - Supply: 58µA (x4 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
auf Bestellung 399 Stücke:
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AnzahlPrivatkunde
6+4.14 EUR
10+3.72 EUR
25+3.51 EUR
100+3 EUR
250+2.81 EUR
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TSX921ILT en.DM00078379.pdf
TSX921ILT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 2.8mA
Slew Rate: 17V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 4 mV
Supplier Device Package: SOT-23-5
Number of Circuits: 1
Current - Output / Channel: 74 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 16 V
auf Bestellung 4970 Stücke:
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9+2.53 EUR
12+1.84 EUR
25+1.68 EUR
100+1.49 EUR
250+1.39 EUR
500+1.33 EUR
1000+1.32 EUR
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TSX9291ILT en.DM00082871.pdf
TSX9291ILT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 2.8mA
Slew Rate: 27V/µs
Gain Bandwidth Product: 16 MHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 4 mV
Supplier Device Package: SOT-23-5
Number of Circuits: 1
Current - Output / Channel: 74 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 16 V
auf Bestellung 3117 Stücke:
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AnzahlPrivatkunde
8+2.62 EUR
12+1.9 EUR
25+1.73 EUR
100+1.54 EUR
250+1.44 EUR
500+1.38 EUR
1000+1.37 EUR
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STBLC01QTR DM00051480.pdf
STBLC01QTR
Hersteller: STMicroelectronics
Description: IC BLUETOOTH CTLR 24VFQFPN
auf Bestellung 2990 Stücke:
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STBLC01QTR DM00051480.pdf
STBLC01QTR
Hersteller: STMicroelectronics
Description: IC BLUETOOTH CTLR 24VFQFPN
auf Bestellung 75000 Stücke:
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STCC2540IQTR en.DM00086386.pdf
STCC2540IQTR
Hersteller: STMicroelectronics
Description: IC PWR SWITCH N-CH 1:1 16VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Rds On (Typ): 65mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-VFQFPN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, UVLO
Part Status: Active
auf Bestellung 37000 Stücke:
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3000+2.23 EUR
6000+2.18 EUR
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STCC5021IQTR STCC5011,21.pdf
STCC5021IQTR
Hersteller: STMicroelectronics
Description: IC PWR SWITCH N-CH 1:1 16VFQFPN
Part Status: Obsolete
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 16-VFQFPN (3x3)
Ratio - Input:Output: 1:1
Current - Output (Max): 2.8A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.5V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 65mOhm
Operating Temperature: -40°C ~ 125°C (TJ)
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 16-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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