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STB18NM60ND STB18NM60ND STMicroelectronics en.DM00085221.pdf Description: MOSFET N-CH 600V 13A D2PAK
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Produkt ist nicht verfügbar
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STH110N10F7-6 STH110N10F7-6 STMicroelectronics STH110N10F7-2%2C-6.pdf Description: MOSFET N-CH 100V 110A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
Produkt ist nicht verfügbar
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STH320N4F6-6 STH320N4F6-6 STMicroelectronics en.DM00076403.pdf Description: MOSFET N-CH 40V 200A H2PAK-6
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: H2PAK-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Produkt ist nicht verfügbar
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STL12P6F6 STL12P6F6 STMicroelectronics stl12p6f6.pdf Description: MOSFET P-CH 60V 4A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
auf Bestellung 3000 Stücke:
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3000+0.56 EUR
Mindestbestellmenge: 3000
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STPS140ZY STPS140ZY STMicroelectronics en.DM00068605.pdf Description: DIODE SCHOTTKY 40V 1A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STR1550 STR1550 STMicroelectronics en.DM00040355.pdf Description: TRANS NPN 500V 0.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 500 mW
auf Bestellung 12000 Stücke:
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3000+0.22 EUR
6000+0.2 EUR
9000+0.19 EUR
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STR2550 STR2550 STMicroelectronics en.DM00040356.pdf Description: TRANS PNP 500V 0.5A SOT-23-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
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3000+0.25 EUR
6000+0.23 EUR
9000+0.22 EUR
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STF100N10F7 STF100N10F7 STMicroelectronics en.DM00066568.pdf Description: MOSFET N CH 100V 45A TO-220FP
Rds On (Max) @ Id, Vgs: 8mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 30W (Tc)
auf Bestellung 1461 Stücke:
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5+4.1 EUR
50+1.88 EUR
100+1.86 EUR
500+1.77 EUR
1000+1.64 EUR
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STF10P6F6 STF10P6F6 STMicroelectronics en.DM00051198.pdf Description: MOSFET P-CH 60V 10A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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STF13N60M2 STF13N60M2 STMicroelectronics en.DM00070271.pdf Description: MOSFET N-CH 600V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 1672 Stücke:
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6+3.08 EUR
50+1.48 EUR
100+1.32 EUR
500+1.05 EUR
1000+0.96 EUR
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STGWT60V60DF STGWT60V60DF STMicroelectronics en.DM00074810.pdf Description: IGBT TRENCH FIELD STOP 600V 80A
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/208ns
Switching Energy: 750µJ (on), 550µJ (off)
Test Condition: 400V, 60A, 4.7Ohm, 15V
Gate Charge: 334 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 375 W
Produkt ist nicht verfügbar
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STI10NM60N STI10NM60N STMicroelectronics std10nm60n.pdf Description: MOSFET N-CH 600V 10A I2PAK
Part Status: Obsolete
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Produkt ist nicht verfügbar
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STP13N60M2 STP13N60M2 STMicroelectronics stp13n60m2.pdf Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 586 Stücke:
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5+3.73 EUR
50+1.81 EUR
100+1.63 EUR
500+1.3 EUR
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STP9N60M2 STP9N60M2 STMicroelectronics en.DM00080324.pdf Description: MOSFET N-CH 600V 5.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
Produkt ist nicht verfügbar
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STAC3933 STAC3933 STMicroelectronics en.DM00046798.pdf Description: IC TRANS RF HV/VHF/UHF STAC177B
auf Bestellung 10 Stücke:
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LD1086PUR LD1086PUR STMicroelectronics en.CD00001884.pdf Description: IC REG LINEAR POS ADJ 1.5A
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Voltage - Output (Max): 28.5V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 88dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1.5A
Protection Features: Over Current, Over Temperature
auf Bestellung 1082 Stücke:
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11+1.64 EUR
25+1.49 EUR
100+1.32 EUR
250+1.24 EUR
500+1.19 EUR
1000+1.15 EUR
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LED2001PUR LED2001PUR STMicroelectronics en.DM00079085.pdf Description: IC LED DRVR RGLTR PWM 4A 8VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 850kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 4A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-VFQFPN (4x4)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 18V
auf Bestellung 18145 Stücke:
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250+2.22 EUR
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LNBH29EQTR LNBH29EQTR STMicroelectronics en.DM00052416.pdf Description: IC LNB CTRL STEP-UP I2C 16QFN
Supplier Device Package: 16-QFN (3x3)
Current - Supply: 10mA
Applications: Low-Noise Block (LNB) Down-Converter
Voltage - Supply: 8V ~ 17.5V
Operating Temperature: 0°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 416 Stücke:
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4+5.05 EUR
10+4.54 EUR
25+4.29 EUR
100+3.72 EUR
250+3.53 EUR
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PM8834MTR PM8834MTR STMicroelectronics en.CD00212712.pdf Description: IC GATE DRVR LOW-SIDE 8MSOP
Part Status: Active
Current - Peak Output (Source, Sink): 4A, 4A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 45ns, 35ns
Supplier Device Package: 8-MSOP-EP
Input Type: Non-Inverting
Voltage - Supply: 5V ~ 18V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
auf Bestellung 3640 Stücke:
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5+3.54 EUR
10+2.62 EUR
25+2.39 EUR
100+2.14 EUR
250+2.02 EUR
500+1.94 EUR
1000+1.88 EUR
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PM8903ATR PM8903ATR STMicroelectronics en.DM00074624.pdf Description: IC REG BUCK ADJ 3A 16VFQFPN
Produkt ist nicht verfügbar
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ST1S41PHR ST1S41PHR STMicroelectronics en.DM00064431.pdf Description: IC REG BUCK ADJ 4A 8HSOP
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4V
Voltage - Output (Max): 18V
Synchronous Rectifier: Yes
Supplier Device Package: 8-HSOP
Topology: Buck
Voltage - Input (Max): 18V
Frequency - Switching: 850kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 4A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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25+2.15 EUR
100+1.92 EUR
250+1.81 EUR
500+1.74 EUR
1000+1.69 EUR
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ST1S41PUR ST1S41PUR STMicroelectronics en.DM00064431.pdf Description: IC REG BUCK ADJ 4A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-DFN (4x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 2623 Stücke:
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25+2.11 EUR
100+1.88 EUR
250+1.78 EUR
500+1.71 EUR
1000+1.66 EUR
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STB13N80K5 STB13N80K5 STMicroelectronics en.DM00079143.pdf Description: MOSFET N-CH 800V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 474 Stücke:
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3+7.96 EUR
10+5.29 EUR
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STB36NM60ND STB36NM60ND STMicroelectronics STx36NM60ND_DS.pdf Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1225 Stücke:
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500+4.95 EUR
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STD13N60M2 STD13N60M2 STMicroelectronics en.DM00082928.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 5793 Stücke:
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STD13NM60ND STD13NM60ND STMicroelectronics STx13NM60ND_DS.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
auf Bestellung 9412 Stücke:
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STD9N60M2 STD9N60M2 STMicroelectronics en.DM00080324.pdf Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 3616 Stücke:
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STH270N8F7-2 STH270N8F7-2 STMicroelectronics en.DM00071594.pdf Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
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STH270N8F7-6 STH270N8F7-6 STMicroelectronics en.DM00071594.pdf Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
auf Bestellung 2360 Stücke:
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STH320N4F6-2 STH320N4F6-2 STMicroelectronics en.DM00076403.pdf Description: MOSFET N-CH 40V 200A H2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STH3N150-2 STH3N150-2 STMicroelectronics en.CD00149569.pdf Description: MOSFET N-CH 1500V 2.5A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V
auf Bestellung 2456 Stücke:
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STL110N10F7 STL110N10F7 STMicroelectronics en.DM00071579.pdf Description: MOSFET N-CH 100V 107A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
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STL38N65M5 STL38N65M5 STMicroelectronics en.DM00056210.pdf Description: MOSFET N-CH 650V PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 3000 Stücke:
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STL60N10F7 STL60N10F7 STMicroelectronics en.DM00081178.pdf Description: MOSFET N-CH 100V 46A POWERFLAT
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 72W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
auf Bestellung 14477 Stücke:
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STNS01PUR STNS01PUR STMicroelectronics en.DM00085223.pdf Description: IC BATT CHG LI-ION 1CELL 12DFN
Part Status: Active
Current - Charging: Constant - Programmable
Battery Pack Voltage: 4.2V
Voltage - Supply (Max): 5.4V
Fault Protection: Over Current, Over Temperature, Short Circuit
Charge Current - Max: 220mA
Supplier Device Package: 12-DFN (3x3)
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 85°C (TA)
Interface: USB
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 12-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 6512 Stücke:
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STR2N2VH5 STR2N2VH5 STMicroelectronics en.DM00068028.pdf Description: MOSFET N-CH 20V 2.3A SOT23
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 350mW (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
auf Bestellung 58085 Stücke:
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12+1.6 EUR
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500+0.84 EUR
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L6751TR L6751TR STMicroelectronics L6751_ds.pdf Description: IC REG CTRLR DDR 2OUT 72WPLGA
Supplier Device Package: 72-WPLGA (6x6)
Applications: Controller, DDR, Intel VR12, AMD SVI
Operating Temperature: 0°C ~ 70°C
Voltage - Input: 10.8V ~ 13.2V
Number of Outputs: 2
Mounting Type: Surface Mount
Voltage - Output: 0.25V ~ 1.52V
Package / Case: 72-WFLGA Exposed Pad
Packaging: Tape & Reel (TR)
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L6758ATR L6758ATR STMicroelectronics L6758A.pdf Description: IC REG CTRLR VR12 2OUT 48VFQFPN
Supplier Device Package: 48-VFQFPN (6x6)
Applications: Controller, Intel VR12
Operating Temperature: 0°C ~ 70°C
Voltage - Input: 10.8V ~ 13.2V
Number of Outputs: 2
Mounting Type: Surface Mount
Voltage - Output: 0.25V ~ 1.52V
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LD1086PUR LD1086PUR STMicroelectronics en.CD00001884.pdf Description: IC REG LINEAR POS ADJ 1.5A
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Voltage - Output (Max): 28.5V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 88dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1.5A
Protection Features: Over Current, Over Temperature
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LED2001PUR LED2001PUR STMicroelectronics en.DM00079085.pdf Description: IC LED DRVR RGLTR PWM 4A 8VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 850kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 4A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-VFQFPN (4x4)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 18V
auf Bestellung 13500 Stücke:
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4500+1.97 EUR
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LNBH29EQTR LNBH29EQTR STMicroelectronics en.DM00052416.pdf Description: IC LNB CTRL STEP-UP I2C 16QFN
Supplier Device Package: 16-QFN (3x3)
Current - Supply: 10mA
Applications: Low-Noise Block (LNB) Down-Converter
Voltage - Supply: 8V ~ 17.5V
Operating Temperature: 0°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PM8834MTR PM8834MTR STMicroelectronics en.CD00212712.pdf Description: IC GATE DRVR LOW-SIDE 8MSOP
Part Status: Active
Current - Peak Output (Source, Sink): 4A, 4A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 45ns, 35ns
Supplier Device Package: 8-MSOP-EP
Input Type: Non-Inverting
Voltage - Supply: 5V ~ 18V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PM8903ATR PM8903ATR STMicroelectronics en.DM00074624.pdf Description: IC REG BUCK ADJ 3A 16VFQFPN
Produkt ist nicht verfügbar
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ST1S41PHR ST1S41PHR STMicroelectronics en.DM00064431.pdf Description: IC REG BUCK ADJ 4A 8HSOP
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4V
Voltage - Output (Max): 18V
Synchronous Rectifier: Yes
Supplier Device Package: 8-HSOP
Topology: Buck
Voltage - Input (Max): 18V
Frequency - Switching: 850kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 4A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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2500+1.63 EUR
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ST1S41PUR ST1S41PUR STMicroelectronics en.DM00064431.pdf Description: IC REG BUCK ADJ 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-DFN (4x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
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STB13N80K5 STB13N80K5 STMicroelectronics en.DM00079143.pdf Description: MOSFET N-CH 800V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Produkt ist nicht verfügbar
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STB36NM60ND STB36NM60ND STMicroelectronics STx36NM60ND_DS.pdf Description: MOSFET N-CH 600V 29A D2PAK
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 190W (Tc)
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STD13N60M2 STD13N60M2 STMicroelectronics en.DM00082928.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
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Lieferzeit 10-14 Tag (e)
2500+0.76 EUR
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STD13NM60ND STD13NM60ND STMicroelectronics STx13NM60ND_DS.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.89 EUR
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STD9N60M2 STD9N60M2 STMicroelectronics en.DM00080324.pdf Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 2500 Stücke:
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2500+0.68 EUR
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STH270N8F7-2 STH270N8F7-2 STMicroelectronics en.DM00071594.pdf Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Produkt ist nicht verfügbar
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STH270N8F7-6 STH270N8F7-6 STMicroelectronics en.DM00071594.pdf Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.06 EUR
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STH320N4F6-2 STH320N4F6-2 STMicroelectronics en.DM00076403.pdf Description: MOSFET N-CH 40V 200A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STH3N150-2 STH3N150-2 STMicroelectronics en.CD00149569.pdf Description: MOSFET N-CH 1500V 2.5A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V
auf Bestellung 2000 Stücke:
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1000+3.66 EUR
2000+3.54 EUR
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STL110N10F7 STL110N10F7 STMicroelectronics en.DM00071579.pdf Description: MOSFET N-CH 100V 107A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
Produkt ist nicht verfügbar
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STL38N65M5 STL38N65M5 STMicroelectronics en.DM00056210.pdf Description: MOSFET N-CH 650V PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 3000 Stücke:
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3000+4.04 EUR
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STL60N10F7 STL60N10F7 STMicroelectronics en.DM00081178.pdf Description: MOSFET N-CH 100V 46A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 5W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
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3000+0.97 EUR
6000+0.92 EUR
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STNS01PUR STNS01PUR STMicroelectronics en.DM00085223.pdf Description: IC BATT CHG LI-ION 1CELL 12DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-WFDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 12-DFN (3x3)
Charge Current - Max: 220mA
Fault Protection: Over Current, Over Temperature, Short Circuit
Voltage - Supply (Max): 5.4V
Battery Pack Voltage: 4.2V
Current - Charging: Constant - Programmable
Part Status: Active
auf Bestellung 6000 Stücke:
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3000+1.65 EUR
6000+1.62 EUR
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STR2N2VH5 STR2N2VH5 STMicroelectronics en.DM00068028.pdf Description: MOSFET N-CH 20V 2.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.62 EUR
Mindestbestellmenge: 3000
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STF13NM60ND STF13NM60ND STMicroelectronics STx13NM60ND_DS.pdf Description: MOSFET N-CH 600V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
auf Bestellung 603 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.73 EUR
50+4.02 EUR
100+3.67 EUR
500+3.52 EUR
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STB18NM60ND en.DM00085221.pdf
STB18NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 13A D2PAK
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Produkt ist nicht verfügbar
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STH110N10F7-6 STH110N10F7-2%2C-6.pdf
STH110N10F7-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 110A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
Produkt ist nicht verfügbar
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STH320N4F6-6 en.DM00076403.pdf
STH320N4F6-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 200A H2PAK-6
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: H2PAK-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Produkt ist nicht verfügbar
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STL12P6F6 stl12p6f6.pdf
STL12P6F6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 60V 4A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.56 EUR
Mindestbestellmenge: 3000
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STPS140ZY en.DM00068605.pdf
STPS140ZY
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 1A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STR1550 en.DM00040355.pdf
STR1550
Hersteller: STMicroelectronics
Description: TRANS NPN 500V 0.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 500 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
6000+0.2 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000
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STR2550 en.DM00040356.pdf
STR2550
Hersteller: STMicroelectronics
Description: TRANS PNP 500V 0.5A SOT-23-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.25 EUR
6000+0.23 EUR
9000+0.22 EUR
Mindestbestellmenge: 3000
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STF100N10F7 en.DM00066568.pdf
STF100N10F7
Hersteller: STMicroelectronics
Description: MOSFET N CH 100V 45A TO-220FP
Rds On (Max) @ Id, Vgs: 8mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 30W (Tc)
auf Bestellung 1461 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.1 EUR
50+1.88 EUR
100+1.86 EUR
500+1.77 EUR
1000+1.64 EUR
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STF10P6F6 en.DM00051198.pdf
STF10P6F6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 60V 10A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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STF13N60M2 en.DM00070271.pdf
STF13N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 1672 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.08 EUR
50+1.48 EUR
100+1.32 EUR
500+1.05 EUR
1000+0.96 EUR
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STGWT60V60DF en.DM00074810.pdf
STGWT60V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FIELD STOP 600V 80A
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/208ns
Switching Energy: 750µJ (on), 550µJ (off)
Test Condition: 400V, 60A, 4.7Ohm, 15V
Gate Charge: 334 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 375 W
Produkt ist nicht verfügbar
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STI10NM60N std10nm60n.pdf
STI10NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A I2PAK
Part Status: Obsolete
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
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STP13N60M2 stp13n60m2.pdf
STP13N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 586 Stücke:
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Anzahl Preis
5+3.73 EUR
50+1.81 EUR
100+1.63 EUR
500+1.3 EUR
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STP9N60M2 en.DM00080324.pdf
STP9N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
Produkt ist nicht verfügbar
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STAC3933 en.DM00046798.pdf
STAC3933
Hersteller: STMicroelectronics
Description: IC TRANS RF HV/VHF/UHF STAC177B
auf Bestellung 10 Stücke:
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LD1086PUR en.CD00001884.pdf
LD1086PUR
Hersteller: STMicroelectronics
Description: IC REG LINEAR POS ADJ 1.5A
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Voltage - Output (Max): 28.5V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 88dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1.5A
Protection Features: Over Current, Over Temperature
auf Bestellung 1082 Stücke:
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Anzahl Preis
8+2.24 EUR
11+1.64 EUR
25+1.49 EUR
100+1.32 EUR
250+1.24 EUR
500+1.19 EUR
1000+1.15 EUR
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LED2001PUR en.DM00079085.pdf
LED2001PUR
Hersteller: STMicroelectronics
Description: IC LED DRVR RGLTR PWM 4A 8VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 850kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 4A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-VFQFPN (4x4)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 18V
auf Bestellung 18145 Stücke:
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Anzahl Preis
5+3.85 EUR
10+2.87 EUR
25+2.62 EUR
100+2.35 EUR
250+2.22 EUR
500+2.16 EUR
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LNBH29EQTR en.DM00052416.pdf
LNBH29EQTR
Hersteller: STMicroelectronics
Description: IC LNB CTRL STEP-UP I2C 16QFN
Supplier Device Package: 16-QFN (3x3)
Current - Supply: 10mA
Applications: Low-Noise Block (LNB) Down-Converter
Voltage - Supply: 8V ~ 17.5V
Operating Temperature: 0°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 416 Stücke:
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Anzahl Preis
4+5.05 EUR
10+4.54 EUR
25+4.29 EUR
100+3.72 EUR
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PM8834MTR en.CD00212712.pdf
PM8834MTR
Hersteller: STMicroelectronics
Description: IC GATE DRVR LOW-SIDE 8MSOP
Part Status: Active
Current - Peak Output (Source, Sink): 4A, 4A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 45ns, 35ns
Supplier Device Package: 8-MSOP-EP
Input Type: Non-Inverting
Voltage - Supply: 5V ~ 18V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
auf Bestellung 3640 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.54 EUR
10+2.62 EUR
25+2.39 EUR
100+2.14 EUR
250+2.02 EUR
500+1.94 EUR
1000+1.88 EUR
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PM8903ATR en.DM00074624.pdf
PM8903ATR
Hersteller: STMicroelectronics
Description: IC REG BUCK ADJ 3A 16VFQFPN
Produkt ist nicht verfügbar
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ST1S41PHR en.DM00064431.pdf
ST1S41PHR
Hersteller: STMicroelectronics
Description: IC REG BUCK ADJ 4A 8HSOP
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4V
Voltage - Output (Max): 18V
Synchronous Rectifier: Yes
Supplier Device Package: 8-HSOP
Topology: Buck
Voltage - Input (Max): 18V
Frequency - Switching: 850kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 4A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 6935 Stücke:
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Anzahl Preis
6+3.19 EUR
10+2.35 EUR
25+2.15 EUR
100+1.92 EUR
250+1.81 EUR
500+1.74 EUR
1000+1.69 EUR
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ST1S41PUR en.DM00064431.pdf
ST1S41PUR
Hersteller: STMicroelectronics
Description: IC REG BUCK ADJ 4A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-DFN (4x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 2623 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.13 EUR
10+2.31 EUR
25+2.11 EUR
100+1.88 EUR
250+1.78 EUR
500+1.71 EUR
1000+1.66 EUR
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STB13N80K5 en.DM00079143.pdf
STB13N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 474 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.96 EUR
10+5.29 EUR
100+3.78 EUR
Mindestbestellmenge: 3
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STB36NM60ND STx36NM60ND_DS.pdf
STB36NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1225 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.97 EUR
10+8.08 EUR
100+5.88 EUR
500+4.95 EUR
Mindestbestellmenge: 2
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STD13N60M2 en.DM00082928.pdf
STD13N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 5793 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.76 EUR
11+1.75 EUR
100+1.18 EUR
500+0.93 EUR
1000+0.85 EUR
Mindestbestellmenge: 7
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STD13NM60ND STx13NM60ND_DS.pdf
STD13NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
auf Bestellung 9412 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.32 EUR
10+5.54 EUR
100+3.95 EUR
500+3.53 EUR
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STD9N60M2 en.DM00080324.pdf
STD9N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 3616 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
12+1.58 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
Mindestbestellmenge: 8
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STH270N8F7-2 en.DM00071594.pdf
STH270N8F7-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
auf Bestellung 292 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.64 EUR
10+5.76 EUR
100+4.12 EUR
Mindestbestellmenge: 3
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STH270N8F7-6 en.DM00071594.pdf
STH270N8F7-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
auf Bestellung 2360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.31 EUR
10+5.53 EUR
100+3.95 EUR
500+3.52 EUR
Mindestbestellmenge: 3
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STH320N4F6-2 en.DM00076403.pdf
STH320N4F6-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 200A H2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STH3N150-2 en.CD00149569.pdf
STH3N150-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1500V 2.5A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V
auf Bestellung 2456 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.72 EUR
10+6.5 EUR
100+4.69 EUR
500+4.33 EUR
Mindestbestellmenge: 2
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STL110N10F7 en.DM00071579.pdf
STL110N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 107A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.28 EUR
10+2.77 EUR
Mindestbestellmenge: 5
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STL38N65M5 en.DM00056210.pdf
STL38N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.98 EUR
10+6.73 EUR
100+4.94 EUR
Mindestbestellmenge: 2
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STL60N10F7 en.DM00081178.pdf
STL60N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 46A POWERFLAT
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 72W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
auf Bestellung 14477 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
10+2.21 EUR
100+1.5 EUR
500+1.19 EUR
1000+1.09 EUR
Mindestbestellmenge: 6
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STNS01PUR en.DM00085223.pdf
STNS01PUR
Hersteller: STMicroelectronics
Description: IC BATT CHG LI-ION 1CELL 12DFN
Part Status: Active
Current - Charging: Constant - Programmable
Battery Pack Voltage: 4.2V
Voltage - Supply (Max): 5.4V
Fault Protection: Over Current, Over Temperature, Short Circuit
Charge Current - Max: 220mA
Supplier Device Package: 12-DFN (3x3)
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 85°C (TA)
Interface: USB
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 12-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 6512 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.27 EUR
10+2.41 EUR
25+2.19 EUR
100+1.96 EUR
250+1.84 EUR
500+1.77 EUR
1000+1.72 EUR
Mindestbestellmenge: 6
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STR2N2VH5 en.DM00068028.pdf
STR2N2VH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 20V 2.3A SOT23
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 350mW (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
auf Bestellung 58085 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
12+1.6 EUR
100+1.07 EUR
500+0.84 EUR
1000+0.77 EUR
Mindestbestellmenge: 7
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L6751TR L6751_ds.pdf
L6751TR
Hersteller: STMicroelectronics
Description: IC REG CTRLR DDR 2OUT 72WPLGA
Supplier Device Package: 72-WPLGA (6x6)
Applications: Controller, DDR, Intel VR12, AMD SVI
Operating Temperature: 0°C ~ 70°C
Voltage - Input: 10.8V ~ 13.2V
Number of Outputs: 2
Mounting Type: Surface Mount
Voltage - Output: 0.25V ~ 1.52V
Package / Case: 72-WFLGA Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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L6758ATR L6758A.pdf
L6758ATR
Hersteller: STMicroelectronics
Description: IC REG CTRLR VR12 2OUT 48VFQFPN
Supplier Device Package: 48-VFQFPN (6x6)
Applications: Controller, Intel VR12
Operating Temperature: 0°C ~ 70°C
Voltage - Input: 10.8V ~ 13.2V
Number of Outputs: 2
Mounting Type: Surface Mount
Voltage - Output: 0.25V ~ 1.52V
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LD1086PUR en.CD00001884.pdf
LD1086PUR
Hersteller: STMicroelectronics
Description: IC REG LINEAR POS ADJ 1.5A
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Voltage - Output (Max): 28.5V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 88dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1.5A
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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LED2001PUR en.DM00079085.pdf
LED2001PUR
Hersteller: STMicroelectronics
Description: IC LED DRVR RGLTR PWM 4A 8VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 850kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 4A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-VFQFPN (4x4)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 18V
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4500+1.97 EUR
Mindestbestellmenge: 4500
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LNBH29EQTR en.DM00052416.pdf
LNBH29EQTR
Hersteller: STMicroelectronics
Description: IC LNB CTRL STEP-UP I2C 16QFN
Supplier Device Package: 16-QFN (3x3)
Current - Supply: 10mA
Applications: Low-Noise Block (LNB) Down-Converter
Voltage - Supply: 8V ~ 17.5V
Operating Temperature: 0°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PM8834MTR en.CD00212712.pdf
PM8834MTR
Hersteller: STMicroelectronics
Description: IC GATE DRVR LOW-SIDE 8MSOP
Part Status: Active
Current - Peak Output (Source, Sink): 4A, 4A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 45ns, 35ns
Supplier Device Package: 8-MSOP-EP
Input Type: Non-Inverting
Voltage - Supply: 5V ~ 18V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PM8903ATR en.DM00074624.pdf
PM8903ATR
Hersteller: STMicroelectronics
Description: IC REG BUCK ADJ 3A 16VFQFPN
Produkt ist nicht verfügbar
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ST1S41PHR en.DM00064431.pdf
ST1S41PHR
Hersteller: STMicroelectronics
Description: IC REG BUCK ADJ 4A 8HSOP
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4V
Voltage - Output (Max): 18V
Synchronous Rectifier: Yes
Supplier Device Package: 8-HSOP
Topology: Buck
Voltage - Input (Max): 18V
Frequency - Switching: 850kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 4A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.63 EUR
5000+1.6 EUR
Mindestbestellmenge: 2500
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ST1S41PUR en.DM00064431.pdf
ST1S41PUR
Hersteller: STMicroelectronics
Description: IC REG BUCK ADJ 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-DFN (4x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
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STB13N80K5 en.DM00079143.pdf
STB13N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Produkt ist nicht verfügbar
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STB36NM60ND STx36NM60ND_DS.pdf
STB36NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 29A D2PAK
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 190W (Tc)
Produkt ist nicht verfügbar
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STD13N60M2 en.DM00082928.pdf
STD13N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.76 EUR
5000+0.71 EUR
Mindestbestellmenge: 2500
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STD13NM60ND STx13NM60ND_DS.pdf
STD13NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.89 EUR
Mindestbestellmenge: 2500
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STD9N60M2 en.DM00080324.pdf
STD9N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.68 EUR
Mindestbestellmenge: 2500
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STH270N8F7-2 en.DM00071594.pdf
STH270N8F7-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Produkt ist nicht verfügbar
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STH270N8F7-6 en.DM00071594.pdf
STH270N8F7-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.06 EUR
Mindestbestellmenge: 1000
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STH320N4F6-2 en.DM00076403.pdf
STH320N4F6-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 200A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STH3N150-2 en.CD00149569.pdf
STH3N150-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1500V 2.5A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.66 EUR
2000+3.54 EUR
Mindestbestellmenge: 1000
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STL110N10F7 en.DM00071579.pdf
STL110N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 107A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
Produkt ist nicht verfügbar
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STL38N65M5 en.DM00056210.pdf
STL38N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+4.04 EUR
Mindestbestellmenge: 3000
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STL60N10F7 en.DM00081178.pdf
STL60N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 46A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 5W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.97 EUR
6000+0.92 EUR
Mindestbestellmenge: 3000
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STNS01PUR en.DM00085223.pdf
STNS01PUR
Hersteller: STMicroelectronics
Description: IC BATT CHG LI-ION 1CELL 12DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-WFDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 12-DFN (3x3)
Charge Current - Max: 220mA
Fault Protection: Over Current, Over Temperature, Short Circuit
Voltage - Supply (Max): 5.4V
Battery Pack Voltage: 4.2V
Current - Charging: Constant - Programmable
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.65 EUR
6000+1.62 EUR
Mindestbestellmenge: 3000
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STR2N2VH5 en.DM00068028.pdf
STR2N2VH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 20V 2.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.62 EUR
Mindestbestellmenge: 3000
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STF13NM60ND STx13NM60ND_DS.pdf
STF13NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
auf Bestellung 603 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.73 EUR
50+4.02 EUR
100+3.67 EUR
500+3.52 EUR
Mindestbestellmenge: 3
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