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STPS20L60CGY-TR STPS20L60CGY-TR STMicroelectronics STPS20L60C-Y.pdf Description: DIODE ARR SCHOTT 60V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STPS340SY STPS340SY STMicroelectronics en.CD00270569.pdf Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.34 EUR
5000+ 0.32 EUR
Mindestbestellmenge: 2500
T830-8FP T830-8FP STMicroelectronics DM00058404.pdf Description: TRIAC ALTERNISTOR 800V TO220FPAB
auf Bestellung 881 Stücke:
Lieferzeit 21-28 Tag (e)
STPS340UY STPS340UY STMicroelectronics en.CD00270569.pdf Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.84 EUR
Mindestbestellmenge: 2500
STTH1003SBY-TR STTH1003SBY-TR STMicroelectronics en.DM00042790.pdf Description: DIODE GEN PURP 300V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.58 EUR
5000+ 1.5 EUR
Mindestbestellmenge: 2500
STGIPL35K120L1 STGIPL35K120L1 STMicroelectronics STGIPL35K120L1.pdf Description: POWER DRIVER IGBT 1200V SDIP-18L
Packaging: Tube
Package / Case: 18-PowerDIP Module (1.087", 27.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 1 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 35 A
Voltage: 1.2 kV
auf Bestellung 84 Stücke:
Lieferzeit 21-28 Tag (e)
1+64.58 EUR
10+ 57.39 EUR
STD10P6F6 STD10P6F6 STMicroelectronics en.DM00051198.pdf Description: MOSFET P CH 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.96 EUR
5000+ 0.91 EUR
Mindestbestellmenge: 2500
STP10P6F6 STP10P6F6 STMicroelectronics en.DM00051198.pdf Description: MOSFET P-CH 60V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
auf Bestellung 420 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.02 EUR
50+ 2.44 EUR
100+ 1.93 EUR
Mindestbestellmenge: 9
STP46NF30 STP46NF30 STMicroelectronics en.DM00022942.pdf Description: MOSFET N CH 300V 42A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 1685 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.36 EUR
50+ 5.82 EUR
100+ 4.99 EUR
500+ 4.44 EUR
1000+ 3.8 EUR
Mindestbestellmenge: 4
STD9NM40N STD9NM40N STMicroelectronics en.DM00067012.pdf Description: MOSFET N-CH 400V 5.6A DPAK
Produkt ist nicht verfügbar
STL60N32N3LL STL60N32N3LL STMicroelectronics STL60N32N3LL.pdf Description: MOSFET 2N-CH 30V 32A/60A PWRFLAT
Produkt ist nicht verfügbar
STTH8T06DI STTH8T06DI STMicroelectronics en.DM00059176.pdf Description: DIODE GP 600V 8A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 870 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.45 EUR
50+ 3.57 EUR
100+ 2.94 EUR
500+ 2.49 EUR
Mindestbestellmenge: 6
STU65N3LLH5 STU65N3LLH5 STMicroelectronics en.CD00268670.pdf Description: MOSFET N CH 30V 65A IPAK
auf Bestellung 1435 Stücke:
Lieferzeit 21-28 Tag (e)
STW15N80K5 STW15N80K5 STMicroelectronics en.DM00060560.pdf Description: MOSFET N-CH 800V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
ECMF02-4CMX8 ECMF02-4CMX8 STMicroelectronics en.DM00039389.pdf Description: CMC 2LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.047" W (2.50mm x 1.20mm)
Mounting Type: Surface Mount
Number of Lines: 2
Operating Temperature: -40°C ~ 125°C
Height (Max): 0.022" (0.55mm)
DC Resistance (DCR) (Max): 4Ohm
Part Status: Active
auf Bestellung 218381 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.72 EUR
18+ 1.46 EUR
25+ 1.33 EUR
50+ 1.21 EUR
100+ 1.08 EUR
250+ 1.02 EUR
500+ 0.87 EUR
1000+ 0.78 EUR
Mindestbestellmenge: 16
ESDA25SC6Y ESDA25SC6Y STMicroelectronics en.DM00231412.pdf Description: TVS DIODE 24VWM 51VC SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 25V
Voltage - Clamping (Max) @ Ipp: 51V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20377 Stücke:
Lieferzeit 21-28 Tag (e)
27+0.99 EUR
31+ 0.85 EUR
100+ 0.59 EUR
500+ 0.46 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 27
ESDA5V3SC6Y ESDA5V3SC6Y STMicroelectronics en.DM00231412.pdf Description: TVS DIODE 3VWM 21VC SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 22A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 10547 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.48 EUR
21+ 1.26 EUR
100+ 0.88 EUR
500+ 0.68 EUR
1000+ 0.56 EUR
Mindestbestellmenge: 18
STB15N80K5 STB15N80K5 STMicroelectronics en.DM00060560.pdf Description: MOSFET N CH 800V 14A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 932 Stücke:
Lieferzeit 21-28 Tag (e)
3+12.77 EUR
10+ 10.73 EUR
100+ 8.68 EUR
500+ 7.72 EUR
Mindestbestellmenge: 3
STTH2003CGY-TR STTH2003CGY-TR STMicroelectronics en.DM00040839.pdf Description: DIODE ARRAY GP 300V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
auf Bestellung 880 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.41 EUR
10+ 4.49 EUR
100+ 3.58 EUR
500+ 3.03 EUR
Mindestbestellmenge: 5
STTH602CBY-TR STTH602CBY-TR STMicroelectronics en.DM00056393.pdf Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 5 Stücke:
Lieferzeit 21-28 Tag (e)
STD10P6F6 STD10P6F6 STMicroelectronics en.DM00051198.pdf Description: MOSFET P CH 60V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
auf Bestellung 5015 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.31 EUR
14+ 1.89 EUR
100+ 1.47 EUR
500+ 1.25 EUR
1000+ 1.02 EUR
Mindestbestellmenge: 12
STD65N3LLH5 STD65N3LLH5 STMicroelectronics en.CD00268670.pdf Description: MOSFET N CH 30V 65A DPAK
Produkt ist nicht verfügbar
STD9NM40N STD9NM40N STMicroelectronics en.DM00067012.pdf Description: MOSFET N-CH 400V 5.6A DPAK
Produkt ist nicht verfügbar
STTH810GY-TR STTH810GY-TR STMicroelectronics en.DM00031453.pdf Description: DIODE GEN PURP 1KV 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STL10DN15F3 STMicroelectronics DM00067592.pdf Description: MOSFET 2N-CH 150V 10A POWERFLAT
Produkt ist nicht verfügbar
STL10DN15F3 STMicroelectronics DM00067592.pdf Description: MOSFET 2N-CH 150V 10A POWERFLAT
Produkt ist nicht verfügbar
STL60N32N3LL STL60N32N3LL STMicroelectronics STL60N32N3LL.pdf Description: MOSFET 2N-CH 30V 32A/60A PWRFLAT
Produkt ist nicht verfügbar
STN9360 STN9360 STMicroelectronics en.DM00055595.pdf Description: TRANS PNP 600V 0.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1.6 W
auf Bestellung 1437 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.55 EUR
12+ 2.27 EUR
100+ 1.77 EUR
500+ 1.46 EUR
Mindestbestellmenge: 11
STTH1003SBY-TR STTH1003SBY-TR STMicroelectronics en.DM00042790.pdf Description: DIODE GEN PURP 300V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
auf Bestellung 6514 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.82 EUR
10+ 3.12 EUR
100+ 2.43 EUR
500+ 2.06 EUR
1000+ 1.68 EUR
Mindestbestellmenge: 7
STPS20L60CGY-TR STPS20L60CGY-TR STMicroelectronics STPS20L60C-Y.pdf Description: DIODE ARR SCHOTT 60V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 988 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.56 EUR
10+ 2.92 EUR
100+ 2.27 EUR
500+ 1.92 EUR
Mindestbestellmenge: 8
STF15N80K5 STF15N80K5 STMicroelectronics en.DM00060560.pdf Description: MOSFET N-CH 800V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
STI34N65M5 STI34N65M5 STMicroelectronics en.DM00049181.pdf Description: MOSFET N-CH 650V 28A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Produkt ist nicht verfügbar
STB15N80K5 STB15N80K5 STMicroelectronics en.DM00060560.pdf Description: MOSFET N CH 800V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
STP15N80K5 STP15N80K5 STMicroelectronics en.DM00060560.pdf Description: MOSFET N-CH 800V 14A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 594 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.79 EUR
50+ 8.54 EUR
100+ 7.32 EUR
500+ 6.51 EUR
Mindestbestellmenge: 3
STL10DN15F3 STMicroelectronics DM00067592.pdf Description: MOSFET 2N-CH 150V 10A POWERFLAT
Produkt ist nicht verfügbar
STPSC4H065D STPSC4H065D STMicroelectronics en.DM00063407.pdf Description: DIODE SCHOTTKY 650V 4A TO220AC
auf Bestellung 1178 Stücke:
Lieferzeit 21-28 Tag (e)
STPS340SY STPS340SY STMicroelectronics en.CD00270569.pdf Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 6645 Stücke:
Lieferzeit 21-28 Tag (e)
26+1.01 EUR
31+ 0.86 EUR
100+ 0.6 EUR
500+ 0.47 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 26
STPS340UY STPS340UY STMicroelectronics en.CD00270569.pdf Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 3594 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.21 EUR
14+ 1.91 EUR
100+ 1.32 EUR
500+ 1.1 EUR
1000+ 0.94 EUR
Mindestbestellmenge: 12
STPSC10H065B-TR STPSC10H065B-TR STMicroelectronics en.DM00063471.pdf Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
STPSC10H065G-TR STPSC10H065G-TR STMicroelectronics en.DM00063471.pdf Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
STPSC4H065B-TR STPSC4H065B-TR STMicroelectronics en.DM00063407.pdf Description: DIODE SCHOTTKY 650V 4A DPAK
Produkt ist nicht verfügbar
STPSC8H065B-TR STPSC8H065B-TR STMicroelectronics en.DM00063470.pdf Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+4.41 EUR
Mindestbestellmenge: 2500
STPSC8H065G-TR STPSC8H065G-TR STMicroelectronics en.DM00063470.pdf Description: DIODE SIL CARBIDE 650V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Produkt ist nicht verfügbar
STPSC10H065D STPSC10H065D STMicroelectronics en.DM00063471.pdf Description: 650 V 10 A power Schottky silico
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
STPSC20H065CW STPSC20H065CW STMicroelectronics en.DM00063472.pdf Description: DIODE ARRAY SCHOTTKY 650V TO247
auf Bestellung 195 Stücke:
Lieferzeit 21-28 Tag (e)
STPSC8H065D STPSC8H065D STMicroelectronics en.DM00063470.pdf Description: DIODE SCHOTTKY 650V 8A TO220AC
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
STPSC10H065G-TR STPSC10H065G-TR STMicroelectronics en.DM00063471.pdf Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 950 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.62 EUR
10+ 6.4 EUR
100+ 5.18 EUR
500+ 4.6 EUR
Mindestbestellmenge: 4
STPSC10H065B-TR STPSC10H065B-TR STMicroelectronics en.DM00063471.pdf Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 2281 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.98 EUR
10+ 6.72 EUR
100+ 5.44 EUR
500+ 4.83 EUR
1000+ 4.14 EUR
Mindestbestellmenge: 4
STPSC4H065B-TR STPSC4H065B-TR STMicroelectronics en.DM00063407.pdf Description: DIODE SCHOTTKY 650V 4A DPAK
auf Bestellung 1379 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.86 EUR
10+ 4.36 EUR
100+ 3.5 EUR
500+ 2.88 EUR
1000+ 2.62 EUR
Mindestbestellmenge: 6
STPSC8H065B-TR STPSC8H065B-TR STMicroelectronics en.DM00063470.pdf Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 17355 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.03 EUR
10+ 7.21 EUR
100+ 5.91 EUR
500+ 5.03 EUR
1000+ 4.41 EUR
Mindestbestellmenge: 4
STPSC8H065G-TR STPSC8H065G-TR STMicroelectronics en.DM00063470.pdf Description: DIODE SIL CARBIDE 650V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Produkt ist nicht verfügbar
EV-VND5E160AJ EV-VND5E160AJ STMicroelectronics en.DM00070774.pdf Description: BOARD EVAL FOR VND5E160AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E160AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Produkt ist nicht verfügbar
EV-VND5T100AJ EV-VND5T100AJ STMicroelectronics en.DM00509645.pdf Description: BOARD EVAL FOR VND5T100AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5T100AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Produkt ist nicht verfügbar
EV-VND5E050AJ EV-VND5E050AJ STMicroelectronics en.DM00070773.pdf Description: BOARD EVAL FOR VND5E050AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E050AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)
1+31.43 EUR
EV-VND5E160J EV-VND5E160J STMicroelectronics en.DM00070777.pdf Description: BOARD EVAL FOR VND5E160J
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E160J
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Produkt ist nicht verfügbar
EV-VN5E050J EV-VN5E050J STMicroelectronics EV-VN5E050J_(Rev2).pdf Description: BOARD EVAL FOR VN5E050J
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VN5E050J
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Part Status: Active
auf Bestellung 6 Stücke:
Lieferzeit 21-28 Tag (e)
1+31.12 EUR
EV-VN5E050AJ EV-VN5E050AJ STMicroelectronics en.CD00189802.pdf Description: BOARD EVAL FOR VN5E050AJ
Produkt ist nicht verfügbar
EV-VN5E025AJ EV-VN5E025AJ STMicroelectronics en.DM00070771.pdf Description: BOARD EVAL FOR VN5E025AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VN5E025AJ
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Part Status: Active
Produkt ist nicht verfügbar
EV-VND5E050K EV-VND5E050K STMicroelectronics ev-vnd5e050k.pdf Description: BOARD EVAL FOR VND5E050K
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E050K
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)
1+34.58 EUR
EV-VND5E050J EV-VND5E050J STMicroelectronics ev-vnd5e050j.pdf Description: BOARD EVAL FOR VND5E050J
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E050J
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
auf Bestellung 14 Stücke:
Lieferzeit 21-28 Tag (e)
1+31.43 EUR
STPS20L60CGY-TR STPS20L60C-Y.pdf
STPS20L60CGY-TR
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOTT 60V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STPS340SY en.CD00270569.pdf
STPS340SY
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.34 EUR
5000+ 0.32 EUR
Mindestbestellmenge: 2500
T830-8FP DM00058404.pdf
T830-8FP
Hersteller: STMicroelectronics
Description: TRIAC ALTERNISTOR 800V TO220FPAB
auf Bestellung 881 Stücke:
Lieferzeit 21-28 Tag (e)
STPS340UY en.CD00270569.pdf
STPS340UY
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.84 EUR
Mindestbestellmenge: 2500
STTH1003SBY-TR en.DM00042790.pdf
STTH1003SBY-TR
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 300V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.58 EUR
5000+ 1.5 EUR
Mindestbestellmenge: 2500
STGIPL35K120L1 STGIPL35K120L1.pdf
STGIPL35K120L1
Hersteller: STMicroelectronics
Description: POWER DRIVER IGBT 1200V SDIP-18L
Packaging: Tube
Package / Case: 18-PowerDIP Module (1.087", 27.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 1 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 35 A
Voltage: 1.2 kV
auf Bestellung 84 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+64.58 EUR
10+ 57.39 EUR
STD10P6F6 en.DM00051198.pdf
STD10P6F6
Hersteller: STMicroelectronics
Description: MOSFET P CH 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.96 EUR
5000+ 0.91 EUR
Mindestbestellmenge: 2500
STP10P6F6 en.DM00051198.pdf
STP10P6F6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 60V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
auf Bestellung 420 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.02 EUR
50+ 2.44 EUR
100+ 1.93 EUR
Mindestbestellmenge: 9
STP46NF30 en.DM00022942.pdf
STP46NF30
Hersteller: STMicroelectronics
Description: MOSFET N CH 300V 42A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 1685 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.36 EUR
50+ 5.82 EUR
100+ 4.99 EUR
500+ 4.44 EUR
1000+ 3.8 EUR
Mindestbestellmenge: 4
STD9NM40N en.DM00067012.pdf
STD9NM40N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 400V 5.6A DPAK
Produkt ist nicht verfügbar
STL60N32N3LL STL60N32N3LL.pdf
STL60N32N3LL
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 30V 32A/60A PWRFLAT
Produkt ist nicht verfügbar
STTH8T06DI en.DM00059176.pdf
STTH8T06DI
Hersteller: STMicroelectronics
Description: DIODE GP 600V 8A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 870 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.45 EUR
50+ 3.57 EUR
100+ 2.94 EUR
500+ 2.49 EUR
Mindestbestellmenge: 6
STU65N3LLH5 en.CD00268670.pdf
STU65N3LLH5
Hersteller: STMicroelectronics
Description: MOSFET N CH 30V 65A IPAK
auf Bestellung 1435 Stücke:
Lieferzeit 21-28 Tag (e)
STW15N80K5 en.DM00060560.pdf
STW15N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
ECMF02-4CMX8 en.DM00039389.pdf
ECMF02-4CMX8
Hersteller: STMicroelectronics
Description: CMC 2LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.047" W (2.50mm x 1.20mm)
Mounting Type: Surface Mount
Number of Lines: 2
Operating Temperature: -40°C ~ 125°C
Height (Max): 0.022" (0.55mm)
DC Resistance (DCR) (Max): 4Ohm
Part Status: Active
auf Bestellung 218381 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+1.72 EUR
18+ 1.46 EUR
25+ 1.33 EUR
50+ 1.21 EUR
100+ 1.08 EUR
250+ 1.02 EUR
500+ 0.87 EUR
1000+ 0.78 EUR
Mindestbestellmenge: 16
ESDA25SC6Y en.DM00231412.pdf
ESDA25SC6Y
Hersteller: STMicroelectronics
Description: TVS DIODE 24VWM 51VC SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 25V
Voltage - Clamping (Max) @ Ipp: 51V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20377 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
27+0.99 EUR
31+ 0.85 EUR
100+ 0.59 EUR
500+ 0.46 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 27
ESDA5V3SC6Y en.DM00231412.pdf
ESDA5V3SC6Y
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 21VC SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 22A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 10547 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.48 EUR
21+ 1.26 EUR
100+ 0.88 EUR
500+ 0.68 EUR
1000+ 0.56 EUR
Mindestbestellmenge: 18
STB15N80K5 en.DM00060560.pdf
STB15N80K5
Hersteller: STMicroelectronics
Description: MOSFET N CH 800V 14A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 932 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+12.77 EUR
10+ 10.73 EUR
100+ 8.68 EUR
500+ 7.72 EUR
Mindestbestellmenge: 3
STTH2003CGY-TR en.DM00040839.pdf
STTH2003CGY-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 300V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
auf Bestellung 880 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.41 EUR
10+ 4.49 EUR
100+ 3.58 EUR
500+ 3.03 EUR
Mindestbestellmenge: 5
STTH602CBY-TR en.DM00056393.pdf
STTH602CBY-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 5 Stücke:
Lieferzeit 21-28 Tag (e)
STD10P6F6 en.DM00051198.pdf
STD10P6F6
Hersteller: STMicroelectronics
Description: MOSFET P CH 60V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
auf Bestellung 5015 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.31 EUR
14+ 1.89 EUR
100+ 1.47 EUR
500+ 1.25 EUR
1000+ 1.02 EUR
Mindestbestellmenge: 12
STD65N3LLH5 en.CD00268670.pdf
STD65N3LLH5
Hersteller: STMicroelectronics
Description: MOSFET N CH 30V 65A DPAK
Produkt ist nicht verfügbar
STD9NM40N en.DM00067012.pdf
STD9NM40N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 400V 5.6A DPAK
Produkt ist nicht verfügbar
STTH810GY-TR en.DM00031453.pdf
STTH810GY-TR
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 1KV 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STL10DN15F3 DM00067592.pdf
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 150V 10A POWERFLAT
Produkt ist nicht verfügbar
STL10DN15F3 DM00067592.pdf
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 150V 10A POWERFLAT
Produkt ist nicht verfügbar
STL60N32N3LL STL60N32N3LL.pdf
STL60N32N3LL
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 30V 32A/60A PWRFLAT
Produkt ist nicht verfügbar
STN9360 en.DM00055595.pdf
STN9360
Hersteller: STMicroelectronics
Description: TRANS PNP 600V 0.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1.6 W
auf Bestellung 1437 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.55 EUR
12+ 2.27 EUR
100+ 1.77 EUR
500+ 1.46 EUR
Mindestbestellmenge: 11
STTH1003SBY-TR en.DM00042790.pdf
STTH1003SBY-TR
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 300V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
auf Bestellung 6514 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.82 EUR
10+ 3.12 EUR
100+ 2.43 EUR
500+ 2.06 EUR
1000+ 1.68 EUR
Mindestbestellmenge: 7
STPS20L60CGY-TR STPS20L60C-Y.pdf
STPS20L60CGY-TR
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOTT 60V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 988 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.56 EUR
10+ 2.92 EUR
100+ 2.27 EUR
500+ 1.92 EUR
Mindestbestellmenge: 8
STF15N80K5 en.DM00060560.pdf
STF15N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
STI34N65M5 en.DM00049181.pdf
STI34N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 28A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Produkt ist nicht verfügbar
STB15N80K5 en.DM00060560.pdf
STB15N80K5
Hersteller: STMicroelectronics
Description: MOSFET N CH 800V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
STP15N80K5 en.DM00060560.pdf
STP15N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 14A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 594 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+10.79 EUR
50+ 8.54 EUR
100+ 7.32 EUR
500+ 6.51 EUR
Mindestbestellmenge: 3
STL10DN15F3 DM00067592.pdf
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 150V 10A POWERFLAT
Produkt ist nicht verfügbar
STPSC4H065D en.DM00063407.pdf
STPSC4H065D
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 650V 4A TO220AC
auf Bestellung 1178 Stücke:
Lieferzeit 21-28 Tag (e)
STPS340SY en.CD00270569.pdf
STPS340SY
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 6645 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
26+1.01 EUR
31+ 0.86 EUR
100+ 0.6 EUR
500+ 0.47 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 26
STPS340UY en.CD00270569.pdf
STPS340UY
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 3594 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.21 EUR
14+ 1.91 EUR
100+ 1.32 EUR
500+ 1.1 EUR
1000+ 0.94 EUR
Mindestbestellmenge: 12
STPSC10H065B-TR en.DM00063471.pdf
STPSC10H065B-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
STPSC10H065G-TR en.DM00063471.pdf
STPSC10H065G-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
STPSC4H065B-TR en.DM00063407.pdf
STPSC4H065B-TR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 650V 4A DPAK
Produkt ist nicht verfügbar
STPSC8H065B-TR en.DM00063470.pdf
STPSC8H065B-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+4.41 EUR
Mindestbestellmenge: 2500
STPSC8H065G-TR en.DM00063470.pdf
STPSC8H065G-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Produkt ist nicht verfügbar
STPSC10H065D en.DM00063471.pdf
STPSC10H065D
Hersteller: STMicroelectronics
Description: 650 V 10 A power Schottky silico
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
STPSC20H065CW en.DM00063472.pdf
STPSC20H065CW
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 650V TO247
auf Bestellung 195 Stücke:
Lieferzeit 21-28 Tag (e)
STPSC8H065D en.DM00063470.pdf
STPSC8H065D
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 650V 8A TO220AC
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
STPSC10H065G-TR en.DM00063471.pdf
STPSC10H065G-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 950 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.62 EUR
10+ 6.4 EUR
100+ 5.18 EUR
500+ 4.6 EUR
Mindestbestellmenge: 4
STPSC10H065B-TR en.DM00063471.pdf
STPSC10H065B-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 2281 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.98 EUR
10+ 6.72 EUR
100+ 5.44 EUR
500+ 4.83 EUR
1000+ 4.14 EUR
Mindestbestellmenge: 4
STPSC4H065B-TR en.DM00063407.pdf
STPSC4H065B-TR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 650V 4A DPAK
auf Bestellung 1379 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.86 EUR
10+ 4.36 EUR
100+ 3.5 EUR
500+ 2.88 EUR
1000+ 2.62 EUR
Mindestbestellmenge: 6
STPSC8H065B-TR en.DM00063470.pdf
STPSC8H065B-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 17355 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.03 EUR
10+ 7.21 EUR
100+ 5.91 EUR
500+ 5.03 EUR
1000+ 4.41 EUR
Mindestbestellmenge: 4
STPSC8H065G-TR en.DM00063470.pdf
STPSC8H065G-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Produkt ist nicht verfügbar
EV-VND5E160AJ en.DM00070774.pdf
EV-VND5E160AJ
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VND5E160AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E160AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Produkt ist nicht verfügbar
EV-VND5T100AJ en.DM00509645.pdf
EV-VND5T100AJ
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VND5T100AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5T100AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Produkt ist nicht verfügbar
EV-VND5E050AJ en.DM00070773.pdf
EV-VND5E050AJ
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VND5E050AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E050AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+31.43 EUR
EV-VND5E160J en.DM00070777.pdf
EV-VND5E160J
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VND5E160J
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E160J
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Produkt ist nicht verfügbar
EV-VN5E050J EV-VN5E050J_(Rev2).pdf
EV-VN5E050J
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VN5E050J
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VN5E050J
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Part Status: Active
auf Bestellung 6 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+31.12 EUR
EV-VN5E050AJ en.CD00189802.pdf
EV-VN5E050AJ
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VN5E050AJ
Produkt ist nicht verfügbar
EV-VN5E025AJ en.DM00070771.pdf
EV-VN5E025AJ
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VN5E025AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VN5E025AJ
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Part Status: Active
Produkt ist nicht verfügbar
EV-VND5E050K ev-vnd5e050k.pdf
EV-VND5E050K
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VND5E050K
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E050K
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+34.58 EUR
EV-VND5E050J ev-vnd5e050j.pdf
EV-VND5E050J
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VND5E050J
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E050J
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
auf Bestellung 14 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+31.43 EUR
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