Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (160569) > Seite 350 nach 2677
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ESDALCL5-1BM2 | STMicroelectronics |
 Description: TVS DIODE 3VWM SOD882Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 26pF @ 1MHz Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: SOD-882 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5V Power - Peak Pulse: 150W Power Line Protection: No Part Status: Active |
auf Bestellung 16848 Stücke: Lieferzeit 21-28 Tag (e) |
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ESDALCL6-2SC6 | STMicroelectronics |
Description: TVS DIODE 3VWM 17VC SOT23-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: SOT-23-6 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 17V Power Line Protection: Yes Part Status: Active |
auf Bestellung 15011 Stücke: Lieferzeit 21-28 Tag (e) |
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ESDALCL6-4P6A | STMicroelectronics |
Description: TVS DIODE 3VWM SOT666 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 2.5pF @ 1MHz Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: SOT-666 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Power - Peak Pulse: 90W Power Line Protection: Yes Part Status: Active |
auf Bestellung 8964 Stücke: Lieferzeit 21-28 Tag (e) |
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STL57N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 4.3A 8POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 22.5A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 10V Power Dissipation (Max): 2.8W (Ta), 189W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V |
auf Bestellung 5553 Stücke: Lieferzeit 21-28 Tag (e) |
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STL57N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 4.3A 8POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 22.5A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 10V Power Dissipation (Max): 2.8W (Ta), 189W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| STM3240G-JAVA | STMicroelectronics |
Description: STM32F407IGH6 EVAL BRD Packaging: Bulk Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), LCD Core Processor: ARM® Cortex®-M4 Board Type: Evaluation Platform Utilized IC / Part: STM32F407IGH6 Part Status: Obsolete |
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STM32-JAVA | STMicroelectronics |
Description: KIT EVAL FOR STM32 JAVA |
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STM32F4DIS-BB | STMicroelectronics |
Description: BOARD BASE STM32F4 DISCOVERY Packaging: Bulk For Use With/Related Products: STM32 F4 Series Accessory Type: Interface Board Part Status: Obsolete |
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STM32F4DIS-CAM | STMicroelectronics |
Description: BOARD CAMERA STM32F4 DISCOVERY Packaging: Bulk For Use With/Related Products: STM32 Accessory Type: Camera Part Status: Obsolete |
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STM32F4DIS-LCD | STMicroelectronics |
Description: BOARD LCD STM32F4 DISCOVERY Packaging: Bulk For Use With/Related Products: STM32 Accessory Type: LCD Display Part Status: Obsolete |
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STP100N10F7 | STMicroelectronics |
Description: MOSFET N CH 100V 80A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V |
auf Bestellung 1035 Stücke: Lieferzeit 21-28 Tag (e) |
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STP77N6F6 | STMicroelectronics |
Description: MOSFET N-CH 60V 77A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 38.5A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V |
auf Bestellung 1566 Stücke: Lieferzeit 21-28 Tag (e) |
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STD100N10F7 | STMicroelectronics |
Description: MOSFET N CH 100V 80A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V |
auf Bestellung 13205 Stücke: Lieferzeit 21-28 Tag (e) |
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STD100N10F7 | STMicroelectronics |
Description: MOSFET N CH 100V 80A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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STH110N10F7-2 | STMicroelectronics |
Description: MOSFET N CH 100V 110A H2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V |
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STH110N10F7-2 | STMicroelectronics |
Description: MOSFET N CH 100V 110A H2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V |
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STP110N10F7 | STMicroelectronics |
Description: MOSFET N CH 100V 110A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 55A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V |
auf Bestellung 944 Stücke: Lieferzeit 21-28 Tag (e) |
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STP110N55F6 | STMicroelectronics |
Description: MOSFET N-CH 55V 110A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8350 pF @ 25 V |
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STP80N70F6 | STMicroelectronics |
Description: MOSFET N-CH 68V 96A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 68 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V |
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STEVAL-MKI127V1 | STMicroelectronics |
Description: BOARD EVAL FOR L3GD20 Packaging: Box Sensitivity: 70m°/s, 17.5m°/s, 8.75m°/s Interface: I2C, Serial, SPI Sensor Type: Gyroscope, 3 Axis Utilized IC / Part: L3GD20 Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Sensing Range: ±250°/sec, ±500°/sec, ±2000°/sec Part Status: Active |
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STP24N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 18A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V |
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STEVAL-ILD004V1 | STMicroelectronics |
Description: BOARD EVAL FOR TS820 |
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STC3115IJT | STMicroelectronics |
Description: IC BATT GAS GAUGE LI-ION 10CSP Packaging: Cut Tape (CT) Package / Case: 10-WFBGA, CSPBGA Mounting Type: Surface Mount Function: Battery Monitor Interface: I2C Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 10-CSP (1.4x2.04) Part Status: Active |
auf Bestellung 6356 Stücke: Lieferzeit 21-28 Tag (e) |
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STC3115IJT | STMicroelectronics |
Description: IC BATT GAS GAUGE LI-ION 10CSP Packaging: Tape & Reel (TR) Package / Case: 10-WFBGA, CSPBGA Mounting Type: Surface Mount Function: Battery Monitor Interface: I2C Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 10-CSP (1.4x2.04) Part Status: Active |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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SPC560D40L1C4E0X | STMicroelectronics |
Description: IC MCU 32BIT 256KB FLASH 64LQFP |
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SPC560P40L1CEFAR | STMicroelectronics |
Description: IC MCU 32BIT 256KB FLASH 64LQFP Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 256KB (256K x 8) RAM Size: 20K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: e200z0h Data Converters: A/D 16x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, LINbus, SPI, UART/USART Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Grade: Automotive Number of I/O: 37 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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SPC560B64L7C6E0X | STMicroelectronics |
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP Packaging: Tape & Reel (TR) Package / Case: 176-LQFP Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 1.5MB (1.5M x 8) RAM Size: 96K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: e200z0h Data Converters: A/D 53x10/12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 176-LQFP (24x24) Grade: Automotive Number of I/O: 149 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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SPC560B60L5C6E0X | STMicroelectronics |
Description: IC MCU 32BIT 1MB FLASH 144LQFP Packaging: Tape & Reel (TR) Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 1MB (1M x 8) RAM Size: 80K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: e200z0h Data Converters: A/D 53x10/12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, I²C, LINbus, SCI, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Number of I/O: 121 DigiKey Programmable: Not Verified |
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SPC560B64L5C6E0X | STMicroelectronics |
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP Packaging: Tape & Reel (TR) Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 1.5MB (1.5M x 8) RAM Size: 96K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: e200z0h Data Converters: A/D 53x10/12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, I²C, LINbus, SCI, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Number of I/O: 121 DigiKey Programmable: Not Verified |
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SPC56EL60L5CBFSY | STMicroelectronics |
Description: IC MCU 32BIT 1MB FLASH 144LQFP |
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SPC5-HTCOMP-NLTL | STMicroelectronics | Description: HIGHTEC COMPILER FOR SPC56 |
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SPC560D40L1C4E0X | STMicroelectronics |
Description: IC MCU 32BIT 256KB FLASH 64LQFP |
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SPC560P40L1CEFAR | STMicroelectronics |
Description: IC MCU 32BIT 256KB FLASH 64LQFP Packaging: Cut Tape (CT) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 256KB (256K x 8) RAM Size: 20K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: e200z0h Data Converters: A/D 16x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, LINbus, SPI, UART/USART Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Grade: Automotive Number of I/O: 37 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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SPC560B64L7C6E0X | STMicroelectronics |
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP Packaging: Cut Tape (CT) Package / Case: 176-LQFP Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 1.5MB (1.5M x 8) RAM Size: 96K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: e200z0h Data Converters: A/D 53x10/12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 176-LQFP (24x24) Grade: Automotive Number of I/O: 149 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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SPC560B60L5C6E0X | STMicroelectronics |
Description: IC MCU 32BIT 1MB FLASH 144LQFP Packaging: Cut Tape (CT) Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 1MB (1M x 8) RAM Size: 80K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: e200z0h Data Converters: A/D 53x10/12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, I²C, LINbus, SCI, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Number of I/O: 121 DigiKey Programmable: Not Verified |
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SPC560B64L5C6E0X | STMicroelectronics |
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP Packaging: Cut Tape (CT) Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 1.5MB (1.5M x 8) RAM Size: 96K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: e200z0h Data Converters: A/D 53x10/12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, I²C, LINbus, SCI, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Number of I/O: 121 DigiKey Programmable: Not Verified |
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SPC56EL70L5CBFR | STMicroelectronics |
Description: IC MCU 32BIT 2MB FLASH 144LQFP |
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SPC56EL70L5CBFR | STMicroelectronics |
Description: IC MCU 32BIT 2MB FLASH 144LQFP |
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STEVAL-MKI129V3 | STMicroelectronics |
Description: BOARD EVAL FOR MP34DT01 Packaging: Bulk Function: MEMS Omnidirectional Microphones Type: Audio Utilized IC / Part: MP34DT01 Supplied Contents: Board(s) Primary Attributes: Digital Output Part Status: Obsolete |
auf Bestellung 45 Stücke: Lieferzeit 21-28 Tag (e) |
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STEVAL-SPBT2ATV3 | STMicroelectronics |
Description: BOARD EVAL FOR SPBT2532C2.AT2 |
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STEVAL-MKI129V2 | STMicroelectronics |
Description: BOARD EVAL FOR MP34DB01 Packaging: Bulk Function: MEMS Omnidirectional Microphones Type: Audio Utilized IC / Part: MP34DB01 Supplied Contents: Board(s) Primary Attributes: Digital Output Part Status: Obsolete |
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STEVAL-MKI129V1 | STMicroelectronics |
Description: BOARD EVAL FOR MP45DT02 Packaging: Bulk Function: MEMS Omnidirectional Microphones Type: Audio Utilized IC / Part: MP45DT02 Supplied Contents: Board(s) Primary Attributes: Digital Output |
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STP105N3LL | STMicroelectronics |
Description: MOSFET N-CH 30V 80A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 40A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V |
auf Bestellung 704 Stücke: Lieferzeit 21-28 Tag (e) |
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STT6N3LLH6 | STMicroelectronics |
Description: MOSFET N-CH 30V 6A SOT23-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Power Dissipation (Max): 1.6W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V |
auf Bestellung 25234 Stücke: Lieferzeit 21-28 Tag (e) |
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STT6N3LLH6 | STMicroelectronics |
Description: MOSFET N-CH 30V 6A SOT23-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Power Dissipation (Max): 1.6W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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STH310N10F7-2 | STMicroelectronics |
Description: MOSFET N-CH 100V 180A H2PAK-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V Power Dissipation (Max): 315W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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STH310N10F7-2 | STMicroelectronics |
Description: MOSFET N-CH 100V 180A H2PAK-2 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V Power Dissipation (Max): 315W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V |
auf Bestellung 7202 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH30S06W | STMicroelectronics |
Description: DIODE GEN PURP 600V 30A DO247-2 Packaging: Tube Package / Case: DO-247-2 (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 30A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
auf Bestellung 521 Stücke: Lieferzeit 21-28 Tag (e) |
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STU6N65K3 | STMicroelectronics |
Description: MOSFET N-CH 650V 5.4A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.7A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-251 (IPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V |
Produkt ist nicht verfügbar |
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STW46NF30 | STMicroelectronics |
Description: MOSFET N-CH 300V 42A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
Produkt ist nicht verfügbar |
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STWA45N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 35A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V |
auf Bestellung 339 Stücke: Lieferzeit 21-28 Tag (e) |
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STB24N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 18A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V |
Produkt ist nicht verfügbar |
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STD80N4F6 | STMicroelectronics |
Description: MOSFET N-CH 40V 80A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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STGF30H60DF | STMicroelectronics |
Description: IGBT 600V 60A 37W TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 110 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: TO-220FP IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 50ns/160ns Switching Energy: 350µJ (on), 400µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 105 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 37 W |
Produkt ist nicht verfügbar |
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STGP20H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 40A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 42.5ns/177ns Switching Energy: 209µJ (on), 261µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 115 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 167 W |
auf Bestellung 1570 Stücke: Lieferzeit 21-28 Tag (e) |
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STGP30H60DF | STMicroelectronics |
Description: IGBT 600V 60A 260W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 110 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 50ns/160ns Switching Energy: 350µJ (on), 400µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 105 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
Produkt ist nicht verfügbar |
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STGP35HF60W | STMicroelectronics |
Description: IGBT 600V 60A 200W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 30ns/175ns Switching Energy: 290µJ (on), 185µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 140 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 200 W |
auf Bestellung 1975 Stücke: Lieferzeit 21-28 Tag (e) |
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STP240N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 180A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V |
auf Bestellung 9778 Stücke: Lieferzeit 21-28 Tag (e) |
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STP7N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 6A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V |
auf Bestellung 748 Stücke: Lieferzeit 21-28 Tag (e) |
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STP9NM40N | STMicroelectronics |
Description: MOSFET N-CH 400V 5.6A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V |
auf Bestellung 742 Stücke: Lieferzeit 21-28 Tag (e) |
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| ESDALCL5-1BM2 |
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Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM SOD882
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 26pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOD-882
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3VWM SOD882
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 26pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOD-882
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
auf Bestellung 16848 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 31+ | 0.86 EUR |
| 39+ | 0.67 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.25 EUR |
| 2000+ | 0.23 EUR |
| 5000+ | 0.22 EUR |
| ESDALCL6-2SC6 |
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Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 17VC SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 3VWM 17VC SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: Yes
Part Status: Active
auf Bestellung 15011 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 29+ | 0.91 EUR |
| 38+ | 0.7 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.26 EUR |
| ESDALCL6-4P6A |
|
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-666
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 90W
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 3VWM SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-666
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 90W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 8964 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 1.46 EUR |
| 21+ | 1.27 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.62 EUR |
| STL57N65M5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 4.3A 8POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 189W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
Description: MOSFET N-CH 650V 4.3A 8POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 189W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 5553 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 27.85 EUR |
| 10+ | 23.88 EUR |
| 100+ | 19.9 EUR |
| 500+ | 17.56 EUR |
| 1000+ | 15.8 EUR |
| STL57N65M5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 4.3A 8POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 189W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
Description: MOSFET N-CH 650V 4.3A 8POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 189W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 14.81 EUR |
| STM3240G-JAVA |
|
Hersteller: STMicroelectronics
Description: STM32F407IGH6 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F407IGH6
Part Status: Obsolete
Description: STM32F407IGH6 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F407IGH6
Part Status: Obsolete
Produkt ist nicht verfügbar
| STM32-JAVA |
|
Hersteller: STMicroelectronics
Description: KIT EVAL FOR STM32 JAVA
Description: KIT EVAL FOR STM32 JAVA
Produkt ist nicht verfügbar
| STM32F4DIS-BB |
|
Hersteller: STMicroelectronics
Description: BOARD BASE STM32F4 DISCOVERY
Packaging: Bulk
For Use With/Related Products: STM32 F4 Series
Accessory Type: Interface Board
Part Status: Obsolete
Description: BOARD BASE STM32F4 DISCOVERY
Packaging: Bulk
For Use With/Related Products: STM32 F4 Series
Accessory Type: Interface Board
Part Status: Obsolete
Produkt ist nicht verfügbar
| STM32F4DIS-CAM |
|
Hersteller: STMicroelectronics
Description: BOARD CAMERA STM32F4 DISCOVERY
Packaging: Bulk
For Use With/Related Products: STM32
Accessory Type: Camera
Part Status: Obsolete
Description: BOARD CAMERA STM32F4 DISCOVERY
Packaging: Bulk
For Use With/Related Products: STM32
Accessory Type: Camera
Part Status: Obsolete
Produkt ist nicht verfügbar
| STM32F4DIS-LCD |
|
Hersteller: STMicroelectronics
Description: BOARD LCD STM32F4 DISCOVERY
Packaging: Bulk
For Use With/Related Products: STM32
Accessory Type: LCD Display
Part Status: Obsolete
Description: BOARD LCD STM32F4 DISCOVERY
Packaging: Bulk
For Use With/Related Products: STM32
Accessory Type: LCD Display
Part Status: Obsolete
Produkt ist nicht verfügbar
| STP100N10F7 |
|
Hersteller: STMicroelectronics
Description: MOSFET N CH 100V 80A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
Description: MOSFET N CH 100V 80A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
auf Bestellung 1035 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 6.14 EUR |
| 50+ | 4.94 EUR |
| 100+ | 4.07 EUR |
| 500+ | 3.44 EUR |
| 1000+ | 2.92 EUR |
| STP77N6F6 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 77A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 38.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Description: MOSFET N-CH 60V 77A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 38.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
auf Bestellung 1566 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 3.98 EUR |
| 10+ | 3.26 EUR |
| 100+ | 2.54 EUR |
| 500+ | 2.15 EUR |
| 1000+ | 1.75 EUR |
| STD100N10F7 |
|
Hersteller: STMicroelectronics
Description: MOSFET N CH 100V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
Description: MOSFET N CH 100V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
auf Bestellung 13205 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 6.45 EUR |
| 10+ | 5.36 EUR |
| 100+ | 4.27 EUR |
| 500+ | 3.61 EUR |
| 1000+ | 3.07 EUR |
| STD100N10F7 |
|
Hersteller: STMicroelectronics
Description: MOSFET N CH 100V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
Description: MOSFET N CH 100V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 2.91 EUR |
| 5000+ | 2.8 EUR |
| STH110N10F7-2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N CH 100V 110A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
Description: MOSFET N CH 100V 110A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
Produkt ist nicht verfügbar
| STH110N10F7-2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N CH 100V 110A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
Description: MOSFET N CH 100V 110A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
Produkt ist nicht verfügbar
| STP110N10F7 |
|
Hersteller: STMicroelectronics
Description: MOSFET N CH 100V 110A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
Description: MOSFET N CH 100V 110A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
auf Bestellung 944 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 6.53 EUR |
| 50+ | 5.25 EUR |
| 100+ | 4.32 EUR |
| 500+ | 3.66 EUR |
| STP110N55F6 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 55V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8350 pF @ 25 V
Description: MOSFET N-CH 55V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8350 pF @ 25 V
Produkt ist nicht verfügbar
| STP80N70F6 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 68V 96A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 68 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
Description: MOSFET N-CH 68V 96A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 68 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
Produkt ist nicht verfügbar
| STEVAL-MKI127V1 |
|
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR L3GD20
Packaging: Box
Sensitivity: 70m°/s, 17.5m°/s, 8.75m°/s
Interface: I2C, Serial, SPI
Sensor Type: Gyroscope, 3 Axis
Utilized IC / Part: L3GD20
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±250°/sec, ±500°/sec, ±2000°/sec
Part Status: Active
Description: BOARD EVAL FOR L3GD20
Packaging: Box
Sensitivity: 70m°/s, 17.5m°/s, 8.75m°/s
Interface: I2C, Serial, SPI
Sensor Type: Gyroscope, 3 Axis
Utilized IC / Part: L3GD20
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±250°/sec, ±500°/sec, ±2000°/sec
Part Status: Active
Produkt ist nicht verfügbar
| STP24N60M2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
Description: MOSFET N-CH 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
Produkt ist nicht verfügbar
| STEVAL-ILD004V1 |
|
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR TS820
Description: BOARD EVAL FOR TS820
Produkt ist nicht verfügbar
| STC3115IJT |
|
Hersteller: STMicroelectronics
Description: IC BATT GAS GAUGE LI-ION 10CSP
Packaging: Cut Tape (CT)
Package / Case: 10-WFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-CSP (1.4x2.04)
Part Status: Active
Description: IC BATT GAS GAUGE LI-ION 10CSP
Packaging: Cut Tape (CT)
Package / Case: 10-WFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-CSP (1.4x2.04)
Part Status: Active
auf Bestellung 6356 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 4.94 EUR |
| 10+ | 4.44 EUR |
| 25+ | 4.18 EUR |
| 100+ | 3.56 EUR |
| 250+ | 3.35 EUR |
| 500+ | 2.93 EUR |
| 1000+ | 2.43 EUR |
| 2500+ | 2.26 EUR |
| STC3115IJT |
|
Hersteller: STMicroelectronics
Description: IC BATT GAS GAUGE LI-ION 10CSP
Packaging: Tape & Reel (TR)
Package / Case: 10-WFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-CSP (1.4x2.04)
Part Status: Active
Description: IC BATT GAS GAUGE LI-ION 10CSP
Packaging: Tape & Reel (TR)
Package / Case: 10-WFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-CSP (1.4x2.04)
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 2.17 EUR |
| SPC560D40L1C4E0X |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Produkt ist nicht verfügbar
| SPC560P40L1CEFAR |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 16x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Grade: Automotive
Number of I/O: 37
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 16x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Grade: Automotive
Number of I/O: 37
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
| SPC560B64L7C6E0X |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 53x10/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 149
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 53x10/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 149
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
| SPC560B60L5C6E0X |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 53x10/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 121
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 53x10/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 121
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
| SPC560B64L5C6E0X |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 53x10/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 121
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 53x10/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 121
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
| SPC56EL60L5CBFSY |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Produkt ist nicht verfügbar
| SPC5-HTCOMP-NLTL |
Hersteller: STMicroelectronics
Description: HIGHTEC COMPILER FOR SPC56
Description: HIGHTEC COMPILER FOR SPC56
Produkt ist nicht verfügbar
| SPC560D40L1C4E0X |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Produkt ist nicht verfügbar
| SPC560P40L1CEFAR |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 16x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Grade: Automotive
Number of I/O: 37
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 16x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Grade: Automotive
Number of I/O: 37
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
| SPC560B64L7C6E0X |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 53x10/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 149
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 53x10/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 149
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
| SPC560B60L5C6E0X |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 53x10/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 121
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 53x10/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 121
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
| SPC560B64L5C6E0X |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 53x10/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 121
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 53x10/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 121
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
| SPC56EL70L5CBFR |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Produkt ist nicht verfügbar
| SPC56EL70L5CBFR |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Produkt ist nicht verfügbar
| STEVAL-MKI129V3 |
|
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR MP34DT01
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: MP34DT01
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Obsolete
Description: BOARD EVAL FOR MP34DT01
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: MP34DT01
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Obsolete
auf Bestellung 45 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 102.47 EUR |
| 10+ | 99.34 EUR |
| STEVAL-SPBT2ATV3 |
|
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR SPBT2532C2.AT2
Description: BOARD EVAL FOR SPBT2532C2.AT2
Produkt ist nicht verfügbar
| STEVAL-MKI129V2 |
|
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR MP34DB01
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: MP34DB01
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Obsolete
Description: BOARD EVAL FOR MP34DB01
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: MP34DB01
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Obsolete
Produkt ist nicht verfügbar
| STEVAL-MKI129V1 |
|
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR MP45DT02
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: MP45DT02
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Description: BOARD EVAL FOR MP45DT02
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: MP45DT02
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Produkt ist nicht verfügbar
| STP105N3LL |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 40A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Description: MOSFET N-CH 30V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 40A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
auf Bestellung 704 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 3.46 EUR |
| 50+ | 2.78 EUR |
| 100+ | 2.21 EUR |
| 500+ | 1.87 EUR |
| STT6N3LLH6 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 6A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
Description: MOSFET N-CH 30V 6A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
auf Bestellung 25234 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 19+ | 1.43 EUR |
| 21+ | 1.25 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.72 EUR |
| 1000+ | 0.62 EUR |
| STT6N3LLH6 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 6A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
Description: MOSFET N-CH 30V 6A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.55 EUR |
| 6000+ | 0.52 EUR |
| 9000+ | 0.48 EUR |
| STH310N10F7-2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 7.15 EUR |
| 2000+ | 6.73 EUR |
| STH310N10F7-2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
auf Bestellung 7202 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 13.83 EUR |
| 10+ | 11.61 EUR |
| 100+ | 9.39 EUR |
| 500+ | 8.35 EUR |
| STTH30S06W |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 30A DO247-2
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 30A DO247-2
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 521 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 9.52 EUR |
| 10+ | 7.99 EUR |
| 100+ | 6.46 EUR |
| 500+ | 5.75 EUR |
| STU6N65K3 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 5.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Description: MOSFET N-CH 650V 5.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Produkt ist nicht verfügbar
| STW46NF30 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 300V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Description: MOSFET N-CH 300V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Produkt ist nicht verfügbar
| STWA45N65M5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Description: MOSFET N-CH 650V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
auf Bestellung 339 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 20.25 EUR |
| 10+ | 17.36 EUR |
| 100+ | 14.46 EUR |
| STB24N60M2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
Description: MOSFET N-CH 600V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
Produkt ist nicht verfügbar
| STD80N4F6 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 3.67 EUR |
| 10+ | 3.06 EUR |
| 100+ | 2.43 EUR |
| 500+ | 2.06 EUR |
| 1000+ | 1.75 EUR |
| STGF30H60DF |
|
Hersteller: STMicroelectronics
Description: IGBT 600V 60A 37W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 37 W
Description: IGBT 600V 60A 37W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 37 W
Produkt ist nicht verfügbar
| STGP20H60DF |
|
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 40A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42.5ns/177ns
Switching Energy: 209µJ (on), 261µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
Description: IGBT TRENCH FS 600V 40A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42.5ns/177ns
Switching Energy: 209µJ (on), 261µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
auf Bestellung 1570 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 4.97 EUR |
| 50+ | 3.99 EUR |
| 100+ | 3.29 EUR |
| 500+ | 2.78 EUR |
| 1000+ | 2.36 EUR |
| STGP30H60DF |
|
Hersteller: STMicroelectronics
Description: IGBT 600V 60A 260W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Description: IGBT 600V 60A 260W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Produkt ist nicht verfügbar
| STGP35HF60W |
|
Hersteller: STMicroelectronics
Description: IGBT 600V 60A 200W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 30ns/175ns
Switching Energy: 290µJ (on), 185µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 200 W
Description: IGBT 600V 60A 200W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 30ns/175ns
Switching Energy: 290µJ (on), 185µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 200 W
auf Bestellung 1975 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 4.18 EUR |
| STP240N10F7 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
Description: MOSFET N-CH 100V 180A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
auf Bestellung 9778 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 9.7 EUR |
| 50+ | 7.68 EUR |
| 100+ | 6.58 EUR |
| 500+ | 5.85 EUR |
| 1000+ | 5.01 EUR |
| 2000+ | 4.72 EUR |
| 5000+ | 4.53 EUR |
| STP7N80K5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
Description: MOSFET N-CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
auf Bestellung 748 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 5.1 EUR |
| 50+ | 4.08 EUR |
| 100+ | 3.36 EUR |
| 500+ | 2.84 EUR |
| STP9NM40N |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 400V 5.6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V
Description: MOSFET N-CH 400V 5.6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V
auf Bestellung 742 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 4.55 EUR |
| 10+ | 3.79 EUR |
| 100+ | 3.02 EUR |
| 500+ | 2.55 EUR |