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STP18N60M2 STP18N60M2 STMicroelectronics en.DM00086800.pdf Description: MOSFET N-CH 600V 13A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V
auf Bestellung 267 Stücke:
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50+2.1 EUR
100+1.89 EUR
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STM32F417VET6TR STM32F417VET6TR STMicroelectronics en.DM00035129.pdf Description: IC MCU 32BIT 512KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 168MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: CANbus, DCMI, EBI/EMI, Ethernet, I2C, IrDA, LINbus, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 82
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STM32F302RCT6TR STM32F302RCT6TR STMicroelectronics en.DM00094064.pdf Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 40K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 52
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TS334IYDT TS334IYDT STMicroelectronics en.CD00268545.pdf Description: IC COMPARATOR 4 GEN PUR 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.6V ~ 5V
Supplier Device Package: 14-SO
Propagation Delay (Max): 210ns
Current - Quiescent (Max): 26µA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.04µA @ 5V
Current - Output (Typ): 93mA @ 5V
CMRR, PSRR (Typ): 79dB CMRR
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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2500+2.04 EUR
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STU7NF25 STU7NF25 STMicroelectronics en.DM00091175.pdf Description: MOSFET N-CH 250V 8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 5226 Stücke:
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75+1.43 EUR
150+1.25 EUR
525+1.14 EUR
1050+1.02 EUR
5025+0.93 EUR
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L4938EDTR-E L4938EDTR-E STMicroelectronics Description: IC REG LINEAR POS ADJ 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Current - Output: 100mA, 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Voltage - Input (Max): 28V
Number of Regulators: 2
Supplier Device Package: 20-SO
Voltage - Output (Max): 5.1V
Voltage - Output (Min/Fixed): 4.9V (5V)
Control Features: Enable, Reset
Part Status: Active
Voltage Dropout (Max): 0.4V @ 100mA, 0.6V @ 400mA
Protection Features: Over Temperature
Produkt ist nicht verfügbar
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L5975DTR STMicroelectronics Description: IC REG BUCK ADJ 3A 8SO
Packaging: Tape & Reel (TR)
Output Type: Adjustable
Mounting Type: Surface Mount
Function: Step-Down
Current - Output: 3A
Output Configuration: Positive
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-SO
Voltage - Output (Max): 36V
Voltage - Input (Min): 4V
Part Status: Active
Produkt ist nicht verfügbar
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STM32L100C-DISCO STM32L100C-DISCO STMicroelectronics en.DM00092176.pdf Description: DISCOVERY STM32L100 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M3
Board Type: Evaluation Platform
Utilized IC / Part: STM32L100
Platform: Discovery
Part Status: Obsolete
Produkt ist nicht verfügbar
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L3GD20HTR L3GD20HTR STMicroelectronics Description: IC MEMS MOTION SENSOR 16LLGA
Packaging: Tape & Reel (TR)
Features: Adjustable Bandwidth, Selectable Scale, Sleep Mode, Temperature Sensor
Package / Case: 16-LGA
Output Type: I2C, SPI
Type: Digital
Axis: X (Pitch), Y (Roll), Z (Yaw)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.2V ~ 3.6V
Bandwidth: 6.25Hz ~ 400Hz
Range °/s: ±245, 500, 2000
Sensitivity (LSB/(°/s)): 8.75 ~ 70
Part Status: Obsolete
Current - Supply: 5 mA
Produkt ist nicht verfügbar
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L3GD20HTR L3GD20HTR STMicroelectronics Description: IC MEMS MOTION SENSOR 16LLGA
Packaging: Cut Tape (CT)
Features: Adjustable Bandwidth, Selectable Scale, Sleep Mode, Temperature Sensor
Package / Case: 16-LGA
Output Type: I2C, SPI
Type: Digital
Axis: X (Pitch), Y (Roll), Z (Yaw)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.2V ~ 3.6V
Bandwidth: 6.25Hz ~ 400Hz
Range °/s: ±245, 500, 2000
Sensitivity (LSB/(°/s)): 8.75 ~ 70
Part Status: Obsolete
Current - Supply: 5 mA
Produkt ist nicht verfügbar
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STB18N60M2 STB18N60M2 STMicroelectronics en.DM00086800.pdf Description: MOSFET N-CH 600V 13A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V
auf Bestellung 1627 Stücke:
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10+2.94 EUR
100+2.03 EUR
500+1.7 EUR
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STB6N60M2 STB6N60M2 STMicroelectronics en.DM00087513.pdf Description: MOSFET N-CH 600V 4.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 232 pF @ 100 V
auf Bestellung 4829 Stücke:
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6+3.22 EUR
10+2.06 EUR
100+1.4 EUR
500+1.12 EUR
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STB7ANM60N STB7ANM60N STMicroelectronics en.DM00058125.pdf Description: MOSFET N-CH 600V 5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1748 Stücke:
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6+3.2 EUR
10+2.22 EUR
100+1.55 EUR
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STB9NK80Z STB9NK80Z STMicroelectronics en.DM00081885.pdf Description: MOSFET N-CH 800V 5.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 926 Stücke:
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10+3.12 EUR
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STD10N60M2 STD10N60M2 STMicroelectronics stp10n60m2.pdf Description: MOSFET N-CH 600V 7.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 100 V
auf Bestellung 3666 Stücke:
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8+2.5 EUR
12+1.58 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
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STD26P3LLH6 STD26P3LLH6 STMicroelectronics en.DM00063009.pdf Description: MOSFET P-CH 30V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 37777 Stücke:
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7+2.85 EUR
10+1.82 EUR
100+1.23 EUR
500+0.97 EUR
1000+0.9 EUR
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STD6N60M2 STD6N60M2 STMicroelectronics en.DM00087513.pdf Description: MOSFET N-CH 600V 4.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 232 pF @ 100 V
Produkt ist nicht verfügbar
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STD7ANM60N STD7ANM60N STMicroelectronics en.DM00058125.pdf Description: MOSFET N-CH 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 5503 Stücke:
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6+3.01 EUR
10+2.06 EUR
100+1.48 EUR
500+1.18 EUR
1000+1.13 EUR
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STD7N60M2 STD7N60M2 STMicroelectronics en.DM00084275.pdf Description: MOSFET N-CH 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 100 V
auf Bestellung 8084 Stücke:
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7+2.8 EUR
10+1.78 EUR
100+1.19 EUR
500+0.94 EUR
1000+0.87 EUR
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STD80N6F6 STD80N6F6 STMicroelectronics en.DM00060716.pdf Description: MOSFET N-CH 60V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STDLED625H STDLED625H STMicroelectronics STDLED625H.pdf Description: MOSFET N-CH 620V 4.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
auf Bestellung 2500 Stücke:
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8+2.5 EUR
10+2.05 EUR
100+1.59 EUR
500+1.35 EUR
1000+1.1 EUR
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STGD20N40LZ STGD20N40LZ STMicroelectronics en.DM00077187.pdf Description: IGBT 390V 25A 125W DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 700ns/4.3µs
Test Condition: 300V, 10A, 1kOhm, 5V
Gate Charge: 24 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 125 W
Qualification: AEC-Q101
auf Bestellung 2310 Stücke:
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5+4.21 EUR
10+2.72 EUR
100+1.87 EUR
500+1.51 EUR
1000+1.39 EUR
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STL130N8F7 STL130N8F7 STMicroelectronics en.DM00069191.pdf Description: MOSFET N-CH 80V 130A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
auf Bestellung 10619 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.9 EUR
10+3.85 EUR
100+2.69 EUR
500+2.19 EUR
1000+2.03 EUR
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STL15N65M5 STL15N65M5 STMicroelectronics stl15n65m5.pdf Description: MOSFET N-CH 650V 10A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
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STL18N65M5 STL18N65M5 STMicroelectronics en.DM00063953.pdf Description: MOSFET N-CH 650V 15A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
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STL40N10F7 STL40N10F7 STMicroelectronics en.DM00085663.pdf Description: MOSFET N-CH 100V 40A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 50 V
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STEF4SPUR STEF4SPUR STMicroelectronics en.DM00095426.pdf Description: IC ELECTRONIC FUSE 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 10V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-DFN (3x3)
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STEF033PUR STEF033PUR STMicroelectronics en.DM00092352.pdf Description: IC ELECTRONIC FUSE 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.1V ~ 8V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 10-DFN (3x3)
Produkt ist nicht verfügbar
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STEF4SPUR STEF4SPUR STMicroelectronics en.DM00095426.pdf Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 10V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-DFN (3x3)
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STEF033PUR STEF033PUR STMicroelectronics en.DM00092352.pdf Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.1V ~ 8V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 10-DFN (3x3)
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BALF-SPI-01D3 BALF-SPI-01D3 STMicroelectronics dm00091076.pdf Description: BALUN 779MHZ-956MHZ 6UFBGA FCBGA
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 779MHz ~ 956MHz
Impedance - Unbalanced/Balanced: 50 / -Ohm
Insertion Loss (Max): 2.0dB
Return Loss (Min): 23dB
Phase Difference: 10°
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ESDALC5-4BN4 ESDALC5-4BN4 STMicroelectronics Description: TVS DIODE 5VWM 14.5VC 4UQFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 4-uQFN (1x0.8)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 60W
Power Line Protection: No
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BAL-CW1250D3 BAL-CW1250D3 STMicroelectronics en.DM00085803.pdf Description: BALUN 2.4GHZ-2.5GHZ 5UFBGA FCBGA
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.5GHz
Impedance - Unbalanced/Balanced: 50 / -Ohm
Insertion Loss (Max): 0.97dB
Return Loss (Min): 21dB
Phase Difference: 10°
Produkt ist nicht verfügbar
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BALF-SPI-01D3 BALF-SPI-01D3 STMicroelectronics dm00091076.pdf Description: BALUN 779MHZ-956MHZ 6UFBGA FCBGA
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 779MHz ~ 956MHz
Impedance - Unbalanced/Balanced: 50 / -Ohm
Insertion Loss (Max): 2.0dB
Return Loss (Min): 23dB
Phase Difference: 10°
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DSL02-005SC5 DSL02-005SC5 STMicroelectronics protections-and-emi-filters.html Description: TVS DIODE 5VWM 18VC SOT23-5L
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 24A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOT-23-5
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 18V
Power Line Protection: No
Produkt ist nicht verfügbar
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DSL02-010SC5 DSL02-010SC5 STMicroelectronics protections-and-emi-filters.html Description: TVS DIODE 10VWM 24VC SOT235
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 24A (8/20µs)
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SOT-23-5
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11V
Voltage - Clamping (Max) @ Ipp: 24V
Power Line Protection: No
Produkt ist nicht verfügbar
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ESDALC5-4BN4 ESDALC5-4BN4 STMicroelectronics Description: TVS DIODE 5VWM 14.5VC 4UQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 4-uQFN (1x0.8)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 60W
Power Line Protection: No
Produkt ist nicht verfügbar
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BTW69-1200N BTW69-1200N STMicroelectronics en.DM00085949.pdf Description: SCR 1.2KV 50A TOP3
Packaging: Tube
Package / Case: TOP-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 763A
Current - On State (It (AV)) (Max): 31 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: TOP3
Part Status: Active
Current - On State (It (RMS)) (Max): 50 A
Voltage - Off State: 1.2 kV
auf Bestellung 561 Stücke:
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2+12.25 EUR
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CLT01-38S4 CLT01-38S4 STMicroelectronics en.DM00079962.pdf Description: TVS DEVICE MIXED 38HTSSOP
Packaging: Tube
Package / Case: 38-TFSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Applications: General Purpose
Technology: Mixed Technology
Supplier Device Package: 38-HTSSOP
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
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STTH60AC06CPF STTH60AC06CPF STMicroelectronics en.DM00088638.pdf Description: DIODE ARRAY GP 600V 30A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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STTH60AC06CW STTH60AC06CW STMicroelectronics en.DM00088638.pdf Description: DIODE ARRAY GP 600V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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T1235T-8FP T1235T-8FP STMicroelectronics en.DM00077408.pdf Description: TRIAC ALTERNSTR 800V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 90A, 95A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220FPAB
Part Status: Last Time Buy
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V
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T1610H-6T T1610H-6T STMicroelectronics en.DM00084356.pdf Description: TRIAC SENS GATE 600V 16A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 168A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
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T1635T-8FP T1635T-8FP STMicroelectronics t1635t-8fp.pdf Description: TRIAC ALTERNISTOR 800V TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220FPAB
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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T1635T-8T T1635T-8T STMicroelectronics en.DM00082943.pdf Description: TRIAC ALTERNISTOR 800V 16A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
auf Bestellung 966 Stücke:
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T635T-8T T635T-8T STMicroelectronics en.DM00082934.pdf Description: TRIAC ALTERNISTOR 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 45A, 47A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
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T835T-8FP T835T-8FP STMicroelectronics en.DM00077122.pdf Description: TRIAC ALTRNSTR 800V 8A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 63A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220FPAB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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T835T-8T T835T-8T STMicroelectronics en.DM00082668.pdf Description: TRIAC ALTERNISTOR 800V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 63A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
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ACST1035-8FP ACST1035-8FP STMicroelectronics en.DM00096410.pdf Description: TRIAC 800V 10A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: TO-220FPAB
Part Status: Last Time Buy
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Lieferzeit 10-14 Tag (e)
5+3.54 EUR
50+1.73 EUR
100+1.55 EUR
500+1.24 EUR
1000+1.14 EUR
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PM6613NTR PM6613NTR STMicroelectronics Description: IC BAT CHG MULT-CHEM 2-4CL 20QFN
Produkt ist nicht verfügbar
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STTH15AC06CFP STTH15AC06CFP STMicroelectronics en.DM00088636.pdf Description: DIODE ARR GP 600V 7.5A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 7.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 347 Stücke:
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7+2.85 EUR
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STTH15AC06CT STTH15AC06CT STMicroelectronics en.DM00088636.pdf Description: DIODE ARRAY GP 600V 7.5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 7.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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10+1.87 EUR
50+0.69 EUR
500+0.67 EUR
1000+0.66 EUR
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STTH30AC06CP STTH30AC06CP STMicroelectronics en.DM00090647.pdf Description: DIODE ARRAY GP 600V 15A TO-3PF
Packaging: Tube
Package / Case: TO-3PF
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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STTH30AC06CPF STTH30AC06CPF STMicroelectronics en.DM00090647.pdf Description: DIODE ARRAY GP 600V 15A TO-3PF
Packaging: Tube
Package / Case: TO-3PF
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 178 Stücke:
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STTH30AC06CWL STTH30AC06CWL STMicroelectronics en.DM00090647.pdf Description: DIODE ARRAY GP 600V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 600 Stücke:
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STTH60AC06CP STTH60AC06CP STMicroelectronics en.DM00088638.pdf Description: DIODE ARRAY GP 600V 30A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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M24128-DFCS6TP/K M24128-DFCS6TP/K STMicroelectronics en.CD00259167.pdf Description: IC EEPROM 128KBIT I2C 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-UFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
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M24C64-DFCT6TP/K M24C64-DFCT6TP/K STMicroelectronics en.CD00259166.pdf Description: IC EEPROM 64KBIT I2C 1MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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M24M02-DRCS6TP/K M24M02-DRCS6TP/K STMicroelectronics en.CD00290537.pdf Description: IC EEPROM 2MBIT I2C 1MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-UBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.56x2.01)
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
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M95M02-DRCS6TP/K M95M02-DRCS6TP/K STMicroelectronics en.CD00290531.pdf Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-UBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.56x2.01)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
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STP18N60M2 en.DM00086800.pdf
STP18N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 13A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V
auf Bestellung 267 Stücke:
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5+4.24 EUR
50+2.1 EUR
100+1.89 EUR
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STM32F417VET6TR en.DM00035129.pdf
STM32F417VET6TR
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 512KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 168MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: CANbus, DCMI, EBI/EMI, Ethernet, I2C, IrDA, LINbus, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 82
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STM32F302RCT6TR en.DM00094064.pdf
STM32F302RCT6TR
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 40K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 52
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TS334IYDT en.CD00268545.pdf
TS334IYDT
Hersteller: STMicroelectronics
Description: IC COMPARATOR 4 GEN PUR 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.6V ~ 5V
Supplier Device Package: 14-SO
Propagation Delay (Max): 210ns
Current - Quiescent (Max): 26µA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.04µA @ 5V
Current - Output (Typ): 93mA @ 5V
CMRR, PSRR (Typ): 79dB CMRR
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+2.04 EUR
Mindestbestellmenge: 2500
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STU7NF25 en.DM00091175.pdf
STU7NF25
Hersteller: STMicroelectronics
Description: MOSFET N-CH 250V 8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 5226 Stücke:
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6+3.27 EUR
75+1.43 EUR
150+1.25 EUR
525+1.14 EUR
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L4938EDTR-E
L4938EDTR-E
Hersteller: STMicroelectronics
Description: IC REG LINEAR POS ADJ 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Current - Output: 100mA, 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Voltage - Input (Max): 28V
Number of Regulators: 2
Supplier Device Package: 20-SO
Voltage - Output (Max): 5.1V
Voltage - Output (Min/Fixed): 4.9V (5V)
Control Features: Enable, Reset
Part Status: Active
Voltage Dropout (Max): 0.4V @ 100mA, 0.6V @ 400mA
Protection Features: Over Temperature
Produkt ist nicht verfügbar
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L5975DTR
Hersteller: STMicroelectronics
Description: IC REG BUCK ADJ 3A 8SO
Packaging: Tape & Reel (TR)
Output Type: Adjustable
Mounting Type: Surface Mount
Function: Step-Down
Current - Output: 3A
Output Configuration: Positive
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-SO
Voltage - Output (Max): 36V
Voltage - Input (Min): 4V
Part Status: Active
Produkt ist nicht verfügbar
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STM32L100C-DISCO en.DM00092176.pdf
STM32L100C-DISCO
Hersteller: STMicroelectronics
Description: DISCOVERY STM32L100 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M3
Board Type: Evaluation Platform
Utilized IC / Part: STM32L100
Platform: Discovery
Part Status: Obsolete
Produkt ist nicht verfügbar
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L3GD20HTR
L3GD20HTR
Hersteller: STMicroelectronics
Description: IC MEMS MOTION SENSOR 16LLGA
Packaging: Tape & Reel (TR)
Features: Adjustable Bandwidth, Selectable Scale, Sleep Mode, Temperature Sensor
Package / Case: 16-LGA
Output Type: I2C, SPI
Type: Digital
Axis: X (Pitch), Y (Roll), Z (Yaw)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.2V ~ 3.6V
Bandwidth: 6.25Hz ~ 400Hz
Range °/s: ±245, 500, 2000
Sensitivity (LSB/(°/s)): 8.75 ~ 70
Part Status: Obsolete
Current - Supply: 5 mA
Produkt ist nicht verfügbar
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L3GD20HTR
L3GD20HTR
Hersteller: STMicroelectronics
Description: IC MEMS MOTION SENSOR 16LLGA
Packaging: Cut Tape (CT)
Features: Adjustable Bandwidth, Selectable Scale, Sleep Mode, Temperature Sensor
Package / Case: 16-LGA
Output Type: I2C, SPI
Type: Digital
Axis: X (Pitch), Y (Roll), Z (Yaw)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.2V ~ 3.6V
Bandwidth: 6.25Hz ~ 400Hz
Range °/s: ±245, 500, 2000
Sensitivity (LSB/(°/s)): 8.75 ~ 70
Part Status: Obsolete
Current - Supply: 5 mA
Produkt ist nicht verfügbar
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STB18N60M2 en.DM00086800.pdf
STB18N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 13A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V
auf Bestellung 1627 Stücke:
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4+4.54 EUR
10+2.94 EUR
100+2.03 EUR
500+1.7 EUR
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STB6N60M2 en.DM00087513.pdf
STB6N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 4.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 232 pF @ 100 V
auf Bestellung 4829 Stücke:
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Anzahl Preis
6+3.22 EUR
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100+1.4 EUR
500+1.12 EUR
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STB7ANM60N en.DM00058125.pdf
STB7ANM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1748 Stücke:
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6+3.2 EUR
10+2.22 EUR
100+1.55 EUR
500+1.24 EUR
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STB9NK80Z en.DM00081885.pdf
STB9NK80Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 5.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 926 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.75 EUR
10+3.12 EUR
100+2.48 EUR
500+2.1 EUR
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STD10N60M2 stp10n60m2.pdf
STD10N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 7.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 100 V
auf Bestellung 3666 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
12+1.58 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
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STD26P3LLH6 en.DM00063009.pdf
STD26P3LLH6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 37777 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.85 EUR
10+1.82 EUR
100+1.23 EUR
500+0.97 EUR
1000+0.9 EUR
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STD6N60M2 en.DM00087513.pdf
STD6N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 4.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 232 pF @ 100 V
Produkt ist nicht verfügbar
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STD7ANM60N en.DM00058125.pdf
STD7ANM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 5503 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.01 EUR
10+2.06 EUR
100+1.48 EUR
500+1.18 EUR
1000+1.13 EUR
Mindestbestellmenge: 6
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STD7N60M2 en.DM00084275.pdf
STD7N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 100 V
auf Bestellung 8084 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.8 EUR
10+1.78 EUR
100+1.19 EUR
500+0.94 EUR
1000+0.87 EUR
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STD80N6F6 en.DM00060716.pdf
STD80N6F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STDLED625H STDLED625H.pdf
STDLED625H
Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 4.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
10+2.05 EUR
100+1.59 EUR
500+1.35 EUR
1000+1.1 EUR
Mindestbestellmenge: 8
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STGD20N40LZ en.DM00077187.pdf
STGD20N40LZ
Hersteller: STMicroelectronics
Description: IGBT 390V 25A 125W DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 700ns/4.3µs
Test Condition: 300V, 10A, 1kOhm, 5V
Gate Charge: 24 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 125 W
Qualification: AEC-Q101
auf Bestellung 2310 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.21 EUR
10+2.72 EUR
100+1.87 EUR
500+1.51 EUR
1000+1.39 EUR
Mindestbestellmenge: 5
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STL130N8F7 en.DM00069191.pdf
STL130N8F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 130A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
auf Bestellung 10619 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.9 EUR
10+3.85 EUR
100+2.69 EUR
500+2.19 EUR
1000+2.03 EUR
Mindestbestellmenge: 3
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STL15N65M5 stl15n65m5.pdf
STL15N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 10A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 2185 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.21 EUR
10+3.4 EUR
100+2.37 EUR
500+2.06 EUR
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STL18N65M5 en.DM00063953.pdf
STL18N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 9985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.67 EUR
10+3.72 EUR
100+2.61 EUR
500+2.31 EUR
Mindestbestellmenge: 4
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STL40N10F7 en.DM00085663.pdf
STL40N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 40A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 50 V
auf Bestellung 2624 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.19 EUR
10+2.04 EUR
100+1.38 EUR
500+1.1 EUR
1000+1.05 EUR
Mindestbestellmenge: 6
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STEF4SPUR en.DM00095426.pdf
STEF4SPUR
Hersteller: STMicroelectronics
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 10V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-DFN (3x3)
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.12 EUR
Mindestbestellmenge: 3000
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STEF033PUR en.DM00092352.pdf
STEF033PUR
Hersteller: STMicroelectronics
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.1V ~ 8V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 10-DFN (3x3)
Produkt ist nicht verfügbar
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STEF4SPUR en.DM00095426.pdf
STEF4SPUR
Hersteller: STMicroelectronics
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 10V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-DFN (3x3)
auf Bestellung 32671 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
10+1.84 EUR
25+1.67 EUR
100+1.48 EUR
250+1.39 EUR
500+1.34 EUR
1000+1.3 EUR
Mindestbestellmenge: 8
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STEF033PUR en.DM00092352.pdf
STEF033PUR
Hersteller: STMicroelectronics
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.1V ~ 8V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 10-DFN (3x3)
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.8 EUR
14+1.29 EUR
25+1.17 EUR
100+1.03 EUR
250+0.96 EUR
500+0.93 EUR
1000+0.89 EUR
Mindestbestellmenge: 10
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BALF-SPI-01D3 dm00091076.pdf
BALF-SPI-01D3
Hersteller: STMicroelectronics
Description: BALUN 779MHZ-956MHZ 6UFBGA FCBGA
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 779MHz ~ 956MHz
Impedance - Unbalanced/Balanced: 50 / -Ohm
Insertion Loss (Max): 2.0dB
Return Loss (Min): 23dB
Phase Difference: 10°
auf Bestellung 30766 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
34+0.53 EUR
35+0.51 EUR
50+0.5 EUR
100+0.48 EUR
250+0.46 EUR
500+0.45 EUR
1000+0.44 EUR
Mindestbestellmenge: 31
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ESDALC5-4BN4
ESDALC5-4BN4
Hersteller: STMicroelectronics
Description: TVS DIODE 5VWM 14.5VC 4UQFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 4-uQFN (1x0.8)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 60W
Power Line Protection: No
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
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BAL-CW1250D3 en.DM00085803.pdf
BAL-CW1250D3
Hersteller: STMicroelectronics
Description: BALUN 2.4GHZ-2.5GHZ 5UFBGA FCBGA
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.5GHz
Impedance - Unbalanced/Balanced: 50 / -Ohm
Insertion Loss (Max): 0.97dB
Return Loss (Min): 21dB
Phase Difference: 10°
Produkt ist nicht verfügbar
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BALF-SPI-01D3 dm00091076.pdf
BALF-SPI-01D3
Hersteller: STMicroelectronics
Description: BALUN 779MHZ-956MHZ 6UFBGA FCBGA
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 779MHz ~ 956MHz
Impedance - Unbalanced/Balanced: 50 / -Ohm
Insertion Loss (Max): 2.0dB
Return Loss (Min): 23dB
Phase Difference: 10°
auf Bestellung 28300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.35 EUR
10000+0.34 EUR
15000+0.33 EUR
25000+0.32 EUR
Mindestbestellmenge: 5000
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DSL02-005SC5 protections-and-emi-filters.html
DSL02-005SC5
Hersteller: STMicroelectronics
Description: TVS DIODE 5VWM 18VC SOT23-5L
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 24A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOT-23-5
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 18V
Power Line Protection: No
Produkt ist nicht verfügbar
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DSL02-010SC5 protections-and-emi-filters.html
DSL02-010SC5
Hersteller: STMicroelectronics
Description: TVS DIODE 10VWM 24VC SOT235
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 24A (8/20µs)
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SOT-23-5
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11V
Voltage - Clamping (Max) @ Ipp: 24V
Power Line Protection: No
Produkt ist nicht verfügbar
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ESDALC5-4BN4
ESDALC5-4BN4
Hersteller: STMicroelectronics
Description: TVS DIODE 5VWM 14.5VC 4UQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 4-uQFN (1x0.8)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 60W
Power Line Protection: No
Produkt ist nicht verfügbar
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BTW69-1200N en.DM00085949.pdf
BTW69-1200N
Hersteller: STMicroelectronics
Description: SCR 1.2KV 50A TOP3
Packaging: Tube
Package / Case: TOP-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 763A
Current - On State (It (AV)) (Max): 31 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: TOP3
Part Status: Active
Current - On State (It (RMS)) (Max): 50 A
Voltage - Off State: 1.2 kV
auf Bestellung 561 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.25 EUR
30+7.12 EUR
120+5.99 EUR
510+5.27 EUR
Mindestbestellmenge: 2
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CLT01-38S4 en.DM00079962.pdf
CLT01-38S4
Hersteller: STMicroelectronics
Description: TVS DEVICE MIXED 38HTSSOP
Packaging: Tube
Package / Case: 38-TFSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Applications: General Purpose
Technology: Mixed Technology
Supplier Device Package: 38-HTSSOP
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
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STTH60AC06CPF en.DM00088638.pdf
STTH60AC06CPF
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 600V 30A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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STTH60AC06CW en.DM00088638.pdf
STTH60AC06CW
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 600V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.9 EUR
Mindestbestellmenge: 3
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T1235T-8FP en.DM00077408.pdf
T1235T-8FP
Hersteller: STMicroelectronics
Description: TRIAC ALTERNSTR 800V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 90A, 95A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220FPAB
Part Status: Last Time Buy
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V
auf Bestellung 217 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.96 EUR
50+1.95 EUR
100+1.76 EUR
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T1610H-6T en.DM00084356.pdf
T1610H-6T
Hersteller: STMicroelectronics
Description: TRIAC SENS GATE 600V 16A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 168A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
auf Bestellung 2183 Stücke:
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Anzahl Preis
7+2.71 EUR
50+1.29 EUR
100+1.15 EUR
500+0.91 EUR
1000+0.83 EUR
2000+0.77 EUR
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T1635T-8FP t1635t-8fp.pdf
T1635T-8FP
Hersteller: STMicroelectronics
Description: TRIAC ALTERNISTOR 800V TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220FPAB
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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T1635T-8T en.DM00082943.pdf
T1635T-8T
Hersteller: STMicroelectronics
Description: TRIAC ALTERNISTOR 800V 16A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
auf Bestellung 966 Stücke:
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Anzahl Preis
7+2.75 EUR
50+1.31 EUR
100+1.17 EUR
500+0.92 EUR
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T635T-8T en.DM00082934.pdf
T635T-8T
Hersteller: STMicroelectronics
Description: TRIAC ALTERNISTOR 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 45A, 47A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
auf Bestellung 1958 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
50+1.27 EUR
100+1 EUR
500+0.85 EUR
1000+0.84 EUR
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T835T-8FP en.DM00077122.pdf
T835T-8FP
Hersteller: STMicroelectronics
Description: TRIAC ALTRNSTR 800V 8A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 63A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220FPAB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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T835T-8T en.DM00082668.pdf
T835T-8T
Hersteller: STMicroelectronics
Description: TRIAC ALTERNISTOR 800V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 63A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
auf Bestellung 1963 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.22 EUR
50+1.05 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.67 EUR
Mindestbestellmenge: 8
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ACST1035-8FP en.DM00096410.pdf
ACST1035-8FP
Hersteller: STMicroelectronics
Description: TRIAC 800V 10A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: TO-220FPAB
Part Status: Last Time Buy
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.54 EUR
50+1.73 EUR
100+1.55 EUR
500+1.24 EUR
1000+1.14 EUR
Mindestbestellmenge: 5
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PM6613NTR
PM6613NTR
Hersteller: STMicroelectronics
Description: IC BAT CHG MULT-CHEM 2-4CL 20QFN
Produkt ist nicht verfügbar
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STTH15AC06CFP en.DM00088636.pdf
STTH15AC06CFP
Hersteller: STMicroelectronics
Description: DIODE ARR GP 600V 7.5A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 7.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 347 Stücke:
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Anzahl Preis
7+2.85 EUR
50+1.37 EUR
100+1.23 EUR
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STTH15AC06CT en.DM00088636.pdf
STTH15AC06CT
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 600V 7.5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 7.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 2242 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.87 EUR
50+0.69 EUR
500+0.67 EUR
1000+0.66 EUR
2000+0.65 EUR
Mindestbestellmenge: 10
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STTH30AC06CP en.DM00090647.pdf
STTH30AC06CP
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 600V 15A TO-3PF
Packaging: Tube
Package / Case: TO-3PF
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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STTH30AC06CPF en.DM00090647.pdf
STTH30AC06CPF
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 600V 15A TO-3PF
Packaging: Tube
Package / Case: TO-3PF
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 178 Stücke:
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Anzahl Preis
4+4.58 EUR
30+2.47 EUR
120+2 EUR
Mindestbestellmenge: 4
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STTH30AC06CWL en.DM00090647.pdf
STTH30AC06CWL
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 600V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.26 EUR
30+2.32 EUR
120+2.1 EUR
510+1.95 EUR
Mindestbestellmenge: 4
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STTH60AC06CP en.DM00088638.pdf
STTH60AC06CP
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 600V 30A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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M24128-DFCS6TP/K en.CD00259167.pdf
M24128-DFCS6TP/K
Hersteller: STMicroelectronics
Description: IC EEPROM 128KBIT I2C 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-UFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
auf Bestellung 21049 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
26+0.68 EUR
50+0.67 EUR
100+0.66 EUR
250+0.64 EUR
500+0.62 EUR
1000+0.61 EUR
Mindestbestellmenge: 24
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M24C64-DFCT6TP/K en.CD00259166.pdf
M24C64-DFCT6TP/K
Hersteller: STMicroelectronics
Description: IC EEPROM 64KBIT I2C 1MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 40462 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
20+0.9 EUR
25+0.87 EUR
50+0.86 EUR
100+0.84 EUR
250+0.81 EUR
500+0.79 EUR
1000+0.78 EUR
Mindestbestellmenge: 19
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M24M02-DRCS6TP/K en.CD00290537.pdf
M24M02-DRCS6TP/K
Hersteller: STMicroelectronics
Description: IC EEPROM 2MBIT I2C 1MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-UBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.56x2.01)
Part Status: Active
Write Cycle Time - Word, Page: 10ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
auf Bestellung 8648 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.56 EUR
10+5.2 EUR
25+5.04 EUR
50+4.93 EUR
100+4.81 EUR
250+4.66 EUR
500+4.54 EUR
1000+4.43 EUR
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M95M02-DRCS6TP/K en.CD00290531.pdf
M95M02-DRCS6TP/K
Hersteller: STMicroelectronics
Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-UBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.56x2.01)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2717 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.07 EUR
10+5.67 EUR
25+5.5 EUR
50+5.38 EUR
100+5.25 EUR
250+5.08 EUR
500+4.96 EUR
1000+4.83 EUR
Mindestbestellmenge: 3
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