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L6395DTR L6395DTR STMicroelectronics en.DM00072240.pdf Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.9V
Current - Peak Output (Source, Sink): 290mA, 430mA
DigiKey Programmable: Not Verified
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LDFM50PT-TR LDFM50PT-TR STMicroelectronics en.DM00063302.pdf Description: IC REG LINEAR 5V 500MA PPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: PPAK
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Power Good
Part Status: Obsolete
PSRR: 60dB ~ 52dB (120Hz ~ 100kHz)
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
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LDFMPT-TR LDFMPT-TR STMicroelectronics en.DM00063302.pdf Description: IC REG LINEAR POS ADJ 500MA PPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: PPAK
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good
Part Status: Obsolete
PSRR: 62dB ~ 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
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LED2472GBTR LED2472GBTR STMicroelectronics en.DM00084263.pdf Description: IC LED DRIVER LINEAR 72MA 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 24
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Signage
Current - Output / Channel: 72mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 48-TQFP-EP (7x7)
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
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STPSC6H12B-TR1 STPSC6H12B-TR1 STMicroelectronics en.SGDIODRECT1120.pdf Description: DIODE SIL CARBIDE 1200V 6A DPAK
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 330pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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STTH1512GY-TR STTH1512GY-TR STMicroelectronics en.DM00072355.pdf Description: DIODE STANDARD 1200V 15A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 105 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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STTH30R04DY STTH30R04DY STMicroelectronics en.DM00081197.pdf Description: DIODE STANDARD 400V 30A TO220AC
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Qualification: AEC-Q101
Grade: Automotive
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SMP1100SCMC SMP1100SCMC STMicroelectronics en.sgprot0716_web.pdf Description: THYRISTOR 90V 100A DO-214AA
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - Off State: 90V
Voltage - Breakover: 130V
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 70pF
Packaging: Tape & Reel (TR)
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STB26NM60ND STB26NM60ND STMicroelectronics STx26NM60ND.pdf Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
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STD2N80K5 STD2N80K5 STMicroelectronics en.DM00090142.pdf Description: MOSFET N-CH 800V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
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STD2N95K5 STD2N95K5 STMicroelectronics en.DM00096154.pdf Description: MOSFET N-CH 950V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
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STD3N80K5 STD3N80K5 STMicroelectronics en.DM00090304.pdf Description: MOSFET N-CH 800V 2.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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STD5N95K5 STD5N95K5 STMicroelectronics en.DM00084492.pdf Description: MOSFET N-CH 950V 3.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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STL24N60M2 STL24N60M2 STMicroelectronics en.DM00087524.pdf Description: MOSFET N-CH 600V 18A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 9A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
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STPS3L45AF STPS3L45AF STMicroelectronics en.DM00089408.pdf Description: DIODE SCHOTTKY 45V 3A SMAFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAflat
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
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STF15N95K5 STF15N95K5 STMicroelectronics en.DM00095839.pdf Description: MOSFET N-CH 950V 12A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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STF26NM60ND STF26NM60ND STMicroelectronics STx26NM60ND.pdf Description: MOSFET N-CH 600V 21A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
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STF28N60M2 STF28N60M2 STMicroelectronics en.DM00095338.pdf Description: MOSFET N-CH 600V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
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STF2N80K5 STF2N80K5 STMicroelectronics STF2N80K5.pdf Description: MOSFET N-CH 800V 2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
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STF2N95K5 STF2N95K5 STMicroelectronics en.DM00096154.pdf Description: MOSFET N-CH 950V 2A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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STF33N60M2 STF33N60M2 STMicroelectronics en.DM00078147.pdf Description: MOSFET N-CH 600V 26A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
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STF3N80K5 STF3N80K5 STMicroelectronics en.DM00090304.pdf Description: MOSFET N-CH 800V 2.5A TO220FP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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STF5N60M2 STF5N60M2 STMicroelectronics STF5N60M2.pdf Description: MOSFET N-CH 600V 3.7A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 100 V
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STF5N95K5 STF5N95K5 STMicroelectronics en.DM00084492.pdf Description: MOSFET N-CH 950V 3.5A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 963 Stücke:
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50+2.88 EUR
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STGF10H60DF STGF10H60DF STMicroelectronics en.DM00092752.pdf Description: IGBT TRENCH FS 600V 20A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.5ns/103ns
Switching Energy: 83µJ (on), 140µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 30 W
auf Bestellung 1760 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.8 EUR
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500+1.3 EUR
1000+1.19 EUR
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STGF15H60DF STGF15H60DF STMicroelectronics en.DM00092755.pdf Description: IGBT TRENCH FS 600V 30A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24.5ns/118ns
Switching Energy: 136µJ (on), 207µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 30 W
auf Bestellung 697 Stücke:
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50+2.07 EUR
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500+1.48 EUR
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STGP10H60DF STGP10H60DF STMicroelectronics en.DM00092752.pdf Description: IGBT TRENCH FS 600V 20A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.5ns/103ns
Switching Energy: 83µJ (on), 140µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 115 W
auf Bestellung 452 Stücke:
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6+4.11 EUR
50+2 EUR
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STGP15H60DF STGP15H60DF STMicroelectronics en.DM00092755.pdf Description: IGBT TRENCH FS 600V 30A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24.5ns/118ns
Switching Energy: 136µJ (on), 207µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 115 W
auf Bestellung 907 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.57 EUR
50+2.24 EUR
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500+1.61 EUR
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STP15N95K5 STP15N95K5 STMicroelectronics en.DM00095839.pdf Description: MOSFET N-CH 950V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Produkt ist nicht verfügbar
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STP26NM60ND STP26NM60ND STMicroelectronics STx26NM60ND.pdf Description: MOSFET N-CH 600V 21A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
Produkt ist nicht verfügbar
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STP28N60M2 STP28N60M2 STMicroelectronics en.DM00095328.pdf Description: MOSFET N-CH 600V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
auf Bestellung 54 Stücke:
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3+7.19 EUR
50+3.64 EUR
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STP2N80K5 STP2N80K5 STMicroelectronics en.DM00090142.pdf Description: MOSFET N-CH 800V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
auf Bestellung 1215 Stücke:
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7+3.25 EUR
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500+1.08 EUR
1000+0.99 EUR
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STP2N95K5 STP2N95K5 STMicroelectronics en.DM00096154.pdf Description: MOSFET N-CH 950V 2A TO220
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.33 EUR
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500+1.5 EUR
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STP33N60M2 STP33N60M2 STMicroelectronics en.DM00078147.pdf Description: MOSFET N-CH 600V 26A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.13 EUR
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STP3N80K5 STP3N80K5 STMicroelectronics en.DM00090304.pdf Description: MOSFET N-CH 800V 2.5A TO220
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 100µA
auf Bestellung 985 Stücke:
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500+1.51 EUR
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STP40N60M2 STP40N60M2 STMicroelectronics en.DM00089185.pdf Description: MOSFET N-CH 600V 34A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 1653 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.02 EUR
50+5.8 EUR
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500+4.41 EUR
1000+4.13 EUR
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STP5N60M2 STP5N60M2 STMicroelectronics en.DM00096400.pdf Description: MOSFET N-CH 600V 3.7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 100 V
Produkt ist nicht verfügbar
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STP5N95K5 STP5N95K5 STMicroelectronics en.DM00084492.pdf Description: MOSFET N-CH 950V 3.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
Produkt ist nicht verfügbar
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STU2N95K5 STU2N95K5 STMicroelectronics en.DM00096154.pdf Description: MOSFET N-CH 950V 2A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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STU3N80K5 STU3N80K5 STMicroelectronics en.DM00090304.pdf Description: MOSFET N-CH 800V 2.5A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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STU5N60M2 STU5N60M2 STMicroelectronics en.DM00096400.pdf Description: MOSFET N-CH 600V 3.7A IPAK
auf Bestellung 851 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.89 EUR
10+2.57 EUR
100+2.01 EUR
500+1.65 EUR
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STW15N95K5 STW15N95K5 STMicroelectronics en.DM00095839.pdf Description: MOSFET N-CH 950V 12A TO247
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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STW26NM60ND STW26NM60ND STMicroelectronics STx26NM60ND.pdf Description: MOSFET N-CH 600V 21A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
Produkt ist nicht verfügbar
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STW28N60M2 STW28N60M2 STMicroelectronics en.DM00095328.pdf Description: MOSFET N-CH 600V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
auf Bestellung 122 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.13 EUR
30+4.5 EUR
120+3.7 EUR
Mindestbestellmenge: 3 Stücke
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STW33N60M2 STW33N60M2 STMicroelectronics en.DM00078147.pdf Description: MOSFET N-CH 600V 26A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
auf Bestellung 745 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.95 EUR
30+6.19 EUR
120+5.14 EUR
510+4.37 EUR
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STW70N60M2 STW70N60M2 STMicroelectronics en.DM00078630.pdf Description: MOSFET N-CH 600V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
auf Bestellung 354 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.17 EUR
30+10.14 EUR
120+8.6 EUR
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LMV824AIYDT LMV824AIYDT STMicroelectronics en.DM00041851.pdf Description: IC OPAMP GP 4 CIRCUIT 14SO
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 70 mA
Number of Circuits: 4
Part Status: Active
Supplier Device Package: 14-SO
Voltage - Input Offset: 800 µV
Current - Input Bias: 60 nA
Gain Bandwidth Product: 5.5 MHz
Qualification: AEC-Q100
Grade: Automotive
Slew Rate: 1.9V/µs
Current - Supply: 300µA (x4 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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LMV824IYDT LMV824IYDT STMicroelectronics en.DM00041851.pdf Description: IC OPAMP GP 4 CIRCUIT 14SO
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 70 mA
Number of Circuits: 4
Part Status: Active
Supplier Device Package: 14-SO
Voltage - Input Offset: 3.5 mV
Current - Input Bias: 60 nA
Gain Bandwidth Product: 5.5 MHz
Slew Rate: 1.9V/µs
Current - Supply: 300µA (x4 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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LD39130SJ10R STMicroelectronics en.DM00094312.pdf Description: IC REG LIN 1V 300MA 4-FLIPCHIP
Protection Features: Over Current, Over Temperature, Soft Start
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 4-FlipChip (.69x.69)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UFBGA, FCBGA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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LD39130SJ12R STMicroelectronics en.DM00094312.pdf Description: IC REG LIN 1.2V 300MA 4-FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Protection Features: Over Current, Over Temperature, Soft Start
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LD39130SJ18R STMicroelectronics en.DM00094312.pdf Description: IC REG LIN 1.8V 300MA 4-FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Protection Features: Over Current, Over Temperature, Soft Start
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LD39130SJ25R STMicroelectronics en.DM00094312.pdf Description: IC REG LIN 2.5V 300MA 4-FLIPCHIP
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.3V @ 300mA (Typ)
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 4-FlipChip (.69x.69)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UFBGA, FCBGA
Packaging: Cut Tape (CT)
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LD39130SJ29R STMicroelectronics en.DM00094312.pdf Description: IC REG LIN 2.9V 300MA 4-FLIPCHIP
Supplier Device Package: 4-FlipChip (.69x.69)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UFBGA, FCBGA
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.3V @ 300mA (Typ)
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.9V
Produkt ist nicht verfügbar
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LD39130SJ30R STMicroelectronics en.DM00094312.pdf Description: IC REG LIN 3V 300MA 4-FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 300mA (Typ)
Protection Features: Over Current, Over Temperature, Soft Start
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LD39130SJ33R STMicroelectronics en.DM00094312.pdf Description: IC REG LIN 3.3V 300MA 4-FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 300mA (Typ)
Protection Features: Over Current, Over Temperature, Soft Start
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LD39130SJ41R STMicroelectronics en.DM00094312.pdf Description: IC REG LIN 4.1V 300MA 4-FLIPCHIP
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.3V @ 300mA (Typ)
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 4.1V
Supplier Device Package: 4-FlipChip (.69x.69)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UFBGA, FCBGA
Packaging: Cut Tape (CT)
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STD5N95K5 STD5N95K5 STMicroelectronics en.DM00084492.pdf Description: MOSFET N-CH 950V 3.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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STL24N60M2 STL24N60M2 STMicroelectronics en.DM00087524.pdf Description: MOSFET N-CH 600V 18A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 9A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
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STPS15L45CBY-TR STPS15L45CBY-TR STMicroelectronics en.DM00024414.pdf Description: DIODE ARRAY SCHOTT 45V 7.5A DPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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STPS15L45CBY-TR STPS15L45CBY-TR STMicroelectronics en.DM00024414.pdf Description: DIODE ARRAY SCHOTT 45V 7.5A DPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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L6395DTR en.DM00072240.pdf
L6395DTR
Hersteller: STMicroelectronics
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.9V
Current - Peak Output (Source, Sink): 290mA, 430mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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LDFM50PT-TR en.DM00063302.pdf
LDFM50PT-TR
Hersteller: STMicroelectronics
Description: IC REG LINEAR 5V 500MA PPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: PPAK
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Power Good
Part Status: Obsolete
PSRR: 60dB ~ 52dB (120Hz ~ 100kHz)
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
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LDFMPT-TR en.DM00063302.pdf
LDFMPT-TR
Hersteller: STMicroelectronics
Description: IC REG LINEAR POS ADJ 500MA PPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: PPAK
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good
Part Status: Obsolete
PSRR: 62dB ~ 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
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LED2472GBTR en.DM00084263.pdf
LED2472GBTR
Hersteller: STMicroelectronics
Description: IC LED DRIVER LINEAR 72MA 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 24
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Signage
Current - Output / Channel: 72mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 48-TQFP-EP (7x7)
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
Produkt ist nicht verfügbar
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STPSC6H12B-TR1 en.SGDIODRECT1120.pdf
STPSC6H12B-TR1
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 1200V 6A DPAK
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 330pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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STTH1512GY-TR en.DM00072355.pdf
STTH1512GY-TR
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1200V 15A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 105 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STTH30R04DY en.DM00081197.pdf
STTH30R04DY
Hersteller: STMicroelectronics
Description: DIODE STANDARD 400V 30A TO220AC
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Qualification: AEC-Q101
Grade: Automotive
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SMP1100SCMC en.sgprot0716_web.pdf
SMP1100SCMC
Hersteller: STMicroelectronics
Description: THYRISTOR 90V 100A DO-214AA
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - Off State: 90V
Voltage - Breakover: 130V
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 70pF
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STB26NM60ND STx26NM60ND.pdf
STB26NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
Produkt ist nicht verfügbar
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STD2N80K5 en.DM00090142.pdf
STD2N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
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STD2N95K5 en.DM00096154.pdf
STD2N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
Produkt ist nicht verfügbar
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STD3N80K5 en.DM00090304.pdf
STD3N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 2.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.02 EUR
5000+0.95 EUR
Mindestbestellmenge: 2500 Stücke
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STD5N95K5 en.DM00084492.pdf
STD5N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 3.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.27 EUR
Mindestbestellmenge: 2500 Stücke
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STL24N60M2 en.DM00087524.pdf
STL24N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 9A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+2.3 EUR
6000+2.27 EUR
Mindestbestellmenge: 3000 Stücke
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STPS3L45AF en.DM00089408.pdf
STPS3L45AF
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 45V 3A SMAFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAflat
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.18 EUR
20000+0.17 EUR
Mindestbestellmenge: 10000 Stücke
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STF15N95K5 en.DM00095839.pdf
STF15N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 12A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 974 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.15 EUR
50+4.76 EUR
100+4.34 EUR
500+3.59 EUR
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STF26NM60ND STx26NM60ND.pdf
STF26NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
Produkt ist nicht verfügbar
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STF28N60M2 en.DM00095338.pdf
STF28N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
auf Bestellung 83 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.35 EUR
50+3.74 EUR
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STF2N80K5 STF2N80K5.pdf
STF2N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
auf Bestellung 826 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.56 EUR
50+1.71 EUR
100+1.54 EUR
500+1.21 EUR
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STF2N95K5 en.DM00096154.pdf
STF2N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 2A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 2110 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.12 EUR
50+2.49 EUR
100+1.98 EUR
500+1.68 EUR
1000+1.37 EUR
2000+1.29 EUR
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STF33N60M2 en.DM00078147.pdf
STF33N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 26A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
auf Bestellung 702 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.71 EUR
50+3.93 EUR
100+3.57 EUR
500+2.93 EUR
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STF3N80K5 en.DM00090304.pdf
STF3N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 2.5A TO220FP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 1217 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.96 EUR
50+2.44 EUR
100+2.19 EUR
500+1.76 EUR
1000+1.62 EUR
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STF5N60M2 STF5N60M2.pdf
STF5N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 3.7A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 100 V
Produkt ist nicht verfügbar
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STF5N95K5 en.DM00084492.pdf
STF5N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 3.5A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 963 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.61 EUR
50+2.88 EUR
100+2.37 EUR
500+2.01 EUR
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STGF10H60DF en.DM00092752.pdf
STGF10H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 20A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.5ns/103ns
Switching Energy: 83µJ (on), 140µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 30 W
auf Bestellung 1760 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.8 EUR
50+1.83 EUR
100+1.64 EUR
500+1.3 EUR
1000+1.19 EUR
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STGF15H60DF en.DM00092755.pdf
STGF15H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 30A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24.5ns/118ns
Switching Energy: 136µJ (on), 207µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 30 W
auf Bestellung 697 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.25 EUR
50+2.07 EUR
100+1.86 EUR
500+1.48 EUR
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STGP10H60DF en.DM00092752.pdf
STGP10H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 20A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.5ns/103ns
Switching Energy: 83µJ (on), 140µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 115 W
auf Bestellung 452 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.11 EUR
50+2 EUR
100+1.78 EUR
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STGP15H60DF en.DM00092755.pdf
STGP15H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 30A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24.5ns/118ns
Switching Energy: 136µJ (on), 207µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 115 W
auf Bestellung 907 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.57 EUR
50+2.24 EUR
100+2.01 EUR
500+1.61 EUR
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STP15N95K5 en.DM00095839.pdf
STP15N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Produkt ist nicht verfügbar
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STP26NM60ND STx26NM60ND.pdf
STP26NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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STP28N60M2 en.DM00095328.pdf
STP28N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.19 EUR
50+3.64 EUR
Mindestbestellmenge: 3 Stücke
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STP2N80K5 en.DM00090142.pdf
STP2N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
auf Bestellung 1215 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.25 EUR
50+1.54 EUR
100+1.37 EUR
500+1.08 EUR
1000+0.99 EUR
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STP2N95K5 en.DM00096154.pdf
STP2N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 2A TO220
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.33 EUR
50+2.09 EUR
100+1.88 EUR
500+1.5 EUR
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STP33N60M2 en.DM00078147.pdf
STP33N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 26A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.13 EUR
50+4.72 EUR
100+4.3 EUR
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STP3N80K5 en.DM00090304.pdf
STP3N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 2.5A TO220
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 100µA
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.61 EUR
50+2 EUR
100+1.89 EUR
500+1.51 EUR
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STP40N60M2 en.DM00089185.pdf
STP40N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 1653 Stücke:
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AnzahlPrivatkunde
2+11.02 EUR
50+5.8 EUR
100+5.3 EUR
500+4.41 EUR
1000+4.13 EUR
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STP5N60M2 en.DM00096400.pdf
STP5N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 3.7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 100 V
Produkt ist nicht verfügbar
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STP5N95K5 en.DM00084492.pdf
STP5N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 3.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
Produkt ist nicht verfügbar
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STU2N95K5 en.DM00096154.pdf
STU2N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 2A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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STU3N80K5 en.DM00090304.pdf
STU3N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 2.5A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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STU5N60M2 en.DM00096400.pdf
STU5N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 3.7A IPAK
auf Bestellung 851 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.89 EUR
10+2.57 EUR
100+2.01 EUR
500+1.65 EUR
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STW15N95K5 en.DM00095839.pdf
STW15N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 12A TO247
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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STW26NM60ND STx26NM60ND.pdf
STW26NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
Produkt ist nicht verfügbar
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STW28N60M2 en.DM00095328.pdf
STW28N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
auf Bestellung 122 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.13 EUR
30+4.5 EUR
120+3.7 EUR
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STW33N60M2 en.DM00078147.pdf
STW33N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 26A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
auf Bestellung 745 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.95 EUR
30+6.19 EUR
120+5.14 EUR
510+4.37 EUR
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STW70N60M2 en.DM00078630.pdf
STW70N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
auf Bestellung 354 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.17 EUR
30+10.14 EUR
120+8.6 EUR
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LMV824AIYDT en.DM00041851.pdf
LMV824AIYDT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14SO
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 70 mA
Number of Circuits: 4
Part Status: Active
Supplier Device Package: 14-SO
Voltage - Input Offset: 800 µV
Current - Input Bias: 60 nA
Gain Bandwidth Product: 5.5 MHz
Qualification: AEC-Q100
Grade: Automotive
Slew Rate: 1.9V/µs
Current - Supply: 300µA (x4 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.87 EUR
5000+1.82 EUR
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LMV824IYDT en.DM00041851.pdf
LMV824IYDT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14SO
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 70 mA
Number of Circuits: 4
Part Status: Active
Supplier Device Package: 14-SO
Voltage - Input Offset: 3.5 mV
Current - Input Bias: 60 nA
Gain Bandwidth Product: 5.5 MHz
Slew Rate: 1.9V/µs
Current - Supply: 300µA (x4 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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LD39130SJ10R en.DM00094312.pdf
Hersteller: STMicroelectronics
Description: IC REG LIN 1V 300MA 4-FLIPCHIP
Protection Features: Over Current, Over Temperature, Soft Start
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 4-FlipChip (.69x.69)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UFBGA, FCBGA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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LD39130SJ12R en.DM00094312.pdf
Hersteller: STMicroelectronics
Description: IC REG LIN 1.2V 300MA 4-FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Protection Features: Over Current, Over Temperature, Soft Start
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.36 EUR
22+0.96 EUR
25+0.87 EUR
100+0.76 EUR
250+0.7 EUR
500+0.68 EUR
1000+0.65 EUR
2500+0.64 EUR
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LD39130SJ18R en.DM00094312.pdf
Hersteller: STMicroelectronics
Description: IC REG LIN 1.8V 300MA 4-FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Protection Features: Over Current, Over Temperature, Soft Start
auf Bestellung 27777 Stücke:
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13+1.7 EUR
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100+0.96 EUR
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500+0.86 EUR
1000+0.83 EUR
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LD39130SJ25R en.DM00094312.pdf
Hersteller: STMicroelectronics
Description: IC REG LIN 2.5V 300MA 4-FLIPCHIP
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.3V @ 300mA (Typ)
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 4-FlipChip (.69x.69)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UFBGA, FCBGA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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LD39130SJ29R en.DM00094312.pdf
Hersteller: STMicroelectronics
Description: IC REG LIN 2.9V 300MA 4-FLIPCHIP
Supplier Device Package: 4-FlipChip (.69x.69)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UFBGA, FCBGA
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.3V @ 300mA (Typ)
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.9V
Produkt ist nicht verfügbar
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LD39130SJ30R en.DM00094312.pdf
Hersteller: STMicroelectronics
Description: IC REG LIN 3V 300MA 4-FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 300mA (Typ)
Protection Features: Over Current, Over Temperature, Soft Start
auf Bestellung 15708 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.44 EUR
21+1.02 EUR
25+0.92 EUR
100+0.81 EUR
250+0.75 EUR
500+0.73 EUR
1000+0.69 EUR
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LD39130SJ33R en.DM00094312.pdf
Hersteller: STMicroelectronics
Description: IC REG LIN 3.3V 300MA 4-FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 300mA (Typ)
Protection Features: Over Current, Over Temperature, Soft Start
auf Bestellung 10930 Stücke:
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AnzahlPrivatkunde
13+1.7 EUR
18+1.21 EUR
25+1.09 EUR
100+0.96 EUR
250+0.9 EUR
500+0.87 EUR
1000+0.83 EUR
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LD39130SJ41R en.DM00094312.pdf
Hersteller: STMicroelectronics
Description: IC REG LIN 4.1V 300MA 4-FLIPCHIP
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.3V @ 300mA (Typ)
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 4.1V
Supplier Device Package: 4-FlipChip (.69x.69)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UFBGA, FCBGA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STD5N95K5 en.DM00084492.pdf
STD5N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 3.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.36 EUR
10+2.81 EUR
100+1.92 EUR
500+1.54 EUR
1000+1.51 EUR
Mindestbestellmenge: 5 Stücke
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STL24N60M2 en.DM00087524.pdf
STL24N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 9A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
auf Bestellung 8994 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.31 EUR
10+4.8 EUR
100+3.36 EUR
500+2.78 EUR
Mindestbestellmenge: 3 Stücke
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STPS15L45CBY-TR en.DM00024414.pdf
STPS15L45CBY-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTT 45V 7.5A DPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
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STPS15L45CBY-TR en.DM00024414.pdf
STPS15L45CBY-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTT 45V 7.5A DPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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