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M24LR64E-RMN6T/2 M24LR64E-RMN6T/2 STMicroelectronics M24LR64E-R.pdf Description: IC RFID TRANSP 13.56MHZ 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 10000 Stücke:
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2500+1.84 EUR
5000+1.77 EUR
7500+1.73 EUR
Mindestbestellmenge: 2500
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M24LR64E-RDW6T/2 M24LR64E-RDW6T/2 STMicroelectronics M24LR64E-R.pdf Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-TSSOP
Part Status: Active
auf Bestellung 4000 Stücke:
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4000+1.66 EUR
Mindestbestellmenge: 4000
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M24LR64E-RMC6T/2 M24LR64E-RMC6T/2 STMicroelectronics M24LR64E-R.pdf Description: IC RFID TRANSP 13.56MHZ 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-UFDFPN (2x3)
Part Status: Active
auf Bestellung 10000 Stücke:
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5000+1.67 EUR
10000+1.61 EUR
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M24LR04E-RMC6T/2 M24LR04E-RMC6T/2 STMicroelectronics en.DM00038059.pdf Description: IC RFID TRANSP 13.56MHZ 8UFDFPN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-UFDFPN (2x3)
Part Status: Active
auf Bestellung 65000 Stücke:
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5000+0.88 EUR
10000+0.84 EUR
15000+0.83 EUR
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STM8A-DISCOVERY STM8A-DISCOVERY STMicroelectronics en.DM00065987.pdf Description: DISCOVERY STM8A EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), LCD
Core Processor: STM8
Board Type: Evaluation Platform
Utilized IC / Part: STM8A
Platform: Discovery
Part Status: Not For New Designs
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M24LR64E-RMN6T/2 M24LR64E-RMN6T/2 STMicroelectronics M24LR64E-R.pdf Description: IC RFID TRANSP 13.56MHZ 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 12355 Stücke:
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6+2.97 EUR
10+2.56 EUR
25+2.41 EUR
100+2.22 EUR
250+2.1 EUR
500+2.01 EUR
1000+1.94 EUR
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M24LR64E-RDW6T/2 M24LR64E-RDW6T/2 STMicroelectronics M24LR64E-R.pdf Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-TSSOP
Part Status: Active
auf Bestellung 6159 Stücke:
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7+2.76 EUR
10+2.37 EUR
25+2.24 EUR
100+2.06 EUR
250+1.95 EUR
500+1.87 EUR
1000+1.79 EUR
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M24LR64E-RMC6T/2 M24LR64E-RMC6T/2 STMicroelectronics M24LR64E-R.pdf Description: IC RFID TRANSP 13.56MHZ 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-UFDFPN (2x3)
Part Status: Active
auf Bestellung 15280 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.27 EUR
10+2.83 EUR
25+2.67 EUR
100+2.45 EUR
250+2.32 EUR
500+2.23 EUR
1000+2.14 EUR
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M24LR04E-RMC6T/2 M24LR04E-RMC6T/2 STMicroelectronics en.DM00038059.pdf Description: IC RFID TRANSP 13.56MHZ 8UFDFPN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-UFDFPN (2x3)
Part Status: Active
auf Bestellung 71681 Stücke:
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10+1.85 EUR
12+1.6 EUR
25+1.51 EUR
100+1.38 EUR
250+1.31 EUR
500+1.25 EUR
1000+1.2 EUR
Mindestbestellmenge: 10
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STLBC01QTR STLBC01QTR STMicroelectronics STLBC01.pdf Description: IC LOW ENERGY CTLR 24VFQFPN
Produkt ist nicht verfügbar
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STEVAL-IDS001V2 STEVAL-IDS001V2 STMicroelectronics Description: EVAL CARD USB TXRX 315MHZ
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STEVAL-IDS001V5 STEVAL-IDS001V5 STMicroelectronics Description: EVAL CARD USB TXRX 915MHZ
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STLBC01QTR STLBC01QTR STMicroelectronics STLBC01.pdf Description: IC LOW ENERGY CTLR 24VFQFPN
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STLBC01QTR STLBC01QTR STMicroelectronics STLBC01.pdf Description: IC LOW ENERGY CTLR 24VFQFPN
Produkt ist nicht verfügbar
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STH270N4F3-2 STH270N4F3-2 STMicroelectronics Description: MOSFET N-CH 40V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STL6N2VH5 STL6N2VH5 STMicroelectronics en.DM00053721.pdf Description: MOSFET N-CH 20V POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: PowerFlat™ (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 16 V
Produkt ist nicht verfügbar
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STQ1HN60K3-AP STQ1HN60K3-AP STMicroelectronics STQ1HN60K3-AP.pdf Description: MOSFET N-CH 600V 400MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Produkt ist nicht verfügbar
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STL45N65M5 STL45N65M5 STMicroelectronics en.DM00058185.pdf Description: MOSFET N-CH 650V 22.5A PWRFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Produkt ist nicht verfügbar
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STL8N80K5 STL8N80K5 STMicroelectronics en.DM00072732.pdf Description: MOSFET N-CH 800V 4.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Produkt ist nicht verfügbar
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STWA88N65M5 STWA88N65M5 STMicroelectronics en.DM00042858.pdf Description: MOSFET N-CH 650V 84A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8825 pF @ 100 V
auf Bestellung 592 Stücke:
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1+19.98 EUR
30+12.39 EUR
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STF13N80K5 STF13N80K5 STMicroelectronics en.DM00079143.pdf Description: MOSFET N-CH 800V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 864 Stücke:
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3+6.21 EUR
50+3.44 EUR
100+3.23 EUR
500+2.59 EUR
Mindestbestellmenge: 3
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STGP20V60DF STGP20V60DF STMicroelectronics en.DM00079434.pdf Description: IGBT 600V 40A 167W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
Produkt ist nicht verfügbar
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STGP30V60DF STGP30V60DF STMicroelectronics stgb30v60df.pdf Description: IGBT 600V 60A 258W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
Produkt ist nicht verfügbar
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STGW20V60DF STGW20V60DF STMicroelectronics en.DM00079434.pdf Description: IGBT TRENCH FS 600V 40A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
auf Bestellung 389 Stücke:
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3+6.65 EUR
30+3.67 EUR
120+3.01 EUR
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STGW30H60DF STGW30H60DF STMicroelectronics en.DM00040343.pdf Description: IGBT 600V 60A 260W TO247
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STGW40V60DF STGW40V60DF STMicroelectronics en.DM00080360.pdf Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
auf Bestellung 135 Stücke:
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3+7.16 EUR
30+3.96 EUR
120+3.26 EUR
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STGW60V60DF STGW60V60DF STMicroelectronics en.DM00074810.pdf Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/208ns
Switching Energy: 750µJ (on), 550µJ (off)
Test Condition: 400V, 60A, 4.7Ohm, 15V
Gate Charge: 334 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 375 W
auf Bestellung 2522 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.16 EUR
30+3.99 EUR
120+3.29 EUR
510+2.78 EUR
1020+2.59 EUR
2010+2.58 EUR
Mindestbestellmenge: 3
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STGWT20V60DF STGWT20V60DF STMicroelectronics en.DM00079434.pdf Description: IGBT TRENCH FS 600V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
Produkt ist nicht verfügbar
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STGWT30V60DF STGWT30V60DF STMicroelectronics stgb30v60df.pdf Description: IGBT TRENCH FS 600V 60A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
Produkt ist nicht verfügbar
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STGWT40V60DLF STGWT40V60DLF STMicroelectronics Description: IGBT TRENCH FS 600V 80A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/208ns
Switching Energy: 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Produkt ist nicht verfügbar
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STI24N60M2 STI24N60M2 STMicroelectronics en.DM00070788.pdf Description: MOSFET N-CH 600V 18A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
auf Bestellung 172 Stücke:
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STW19NM60N STW19NM60N STMicroelectronics en.DM00080239.pdf Description: MOSFET N-CH 600V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Qualification: AEC-Q101
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STD25NF20 STD25NF20 STMicroelectronics en.DM00079534.pdf Description: MOSFET N-CH 200V 18A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2549 Stücke:
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10+2.07 EUR
100+1.57 EUR
500+1.26 EUR
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STH270N4F3-2 STH270N4F3-2 STMicroelectronics Description: MOSFET N-CH 40V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Qualification: AEC-Q101
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STL45N65M5 STL45N65M5 STMicroelectronics en.DM00058185.pdf Description: MOSFET N-CH 650V 22.5A PWRFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Produkt ist nicht verfügbar
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STL8N80K5 STL8N80K5 STMicroelectronics en.DM00072732.pdf Description: MOSFET N-CH 800V 4.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 2006 Stücke:
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100+2.76 EUR
500+2.23 EUR
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STGIPS30C60-H STGIPS30C60-H STMicroelectronics Description: MOD IPM SLLIMM 30A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 600 V
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STL6N2VH5 STL6N2VH5 STMicroelectronics en.DM00053721.pdf Description: MOSFET N-CH 20V POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: PowerFlat™ (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 16 V
auf Bestellung 2834 Stücke:
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13+1.43 EUR
18+1 EUR
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1000+0.5 EUR
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STT5N2VH5 STT5N2VH5 STMicroelectronics en.DM00111322.pdf Description: MOSFET N-CH 20V SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
auf Bestellung 10626 Stücke:
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15+1.23 EUR
24+0.76 EUR
100+0.49 EUR
500+0.38 EUR
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STT5N2VH5 STT5N2VH5 STMicroelectronics en.DM00111322.pdf Description: MOSFET N-CH 20V SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
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3000+0.29 EUR
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STQ1HN60K3-AP STQ1HN60K3-AP STMicroelectronics STQ1HN60K3-AP.pdf Description: MOSFET N-CH 600V 400MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Produkt ist nicht verfügbar
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STGIPS20C60 STGIPS20C60 STMicroelectronics Description: MOD IPM SLLIMM 20A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGW40V60DLF STGW40V60DLF STMicroelectronics Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/208ns
Switching Energy: 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Produkt ist nicht verfügbar
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STGWT40V60DF STGWT40V60DF STMicroelectronics en.DM00080360.pdf Description: IGBT TRENCH FS 600V 80A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Produkt ist nicht verfügbar
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STS3P6F6 STS3P6F6 STMicroelectronics en.DM00080977.pdf Description: MOSFET P-CH 60V 3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
Produkt ist nicht verfügbar
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STGW30V60DF STGW30V60DF STMicroelectronics stgb30v60df.pdf Description: IGBT TRENCH FS 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
auf Bestellung 666 Stücke:
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30+3.36 EUR
120+2.75 EUR
510+2.31 EUR
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STP13N80K5 STP13N80K5 STMicroelectronics en.DM00079143.pdf Description: MOSFET N-CH 800V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 321 Stücke:
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STS3P6F6 STS3P6F6 STMicroelectronics en.DM00080977.pdf Description: MOSFET P-CH 60V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
Produkt ist nicht verfügbar
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STU1HN60K3 STU1HN60K3 STMicroelectronics en.DM00080877.pdf Description: MOSFET N-CH 600V 1.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Produkt ist nicht verfügbar
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STD25NF20 STD25NF20 STMicroelectronics en.DM00079534.pdf Description: MOSFET N-CH 200V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.05 EUR
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Q7525663 Q7525663 STMicroelectronics Description: KIT ESD PROTECT 16 VALUE 10EA
auf Bestellung 10 Stücke:
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Q7525688 Q7525688 STMicroelectronics Description: KIT ESD PROTECT 10 VALUE 10EA
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Q7525712 Q7525712 STMicroelectronics Description: KIT ESD PROTECT 16 VALUE 10EA
Packaging: Box
Mounting Type: Surface Mount
Quantity: 160 Pieces (16 Values - 10 Each)
Kit Type: ESD Protection
Voltage - Breakdown: 6V ~ 15V
Produkt ist nicht verfügbar
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Q7668862 Q7668862 STMicroelectronics Description: KIT ESD PROTECT 16 VALUE 10EA
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Q7521514 Q7521514 STMicroelectronics Description: KIT ESD PROTECT 7 VALUE 10EA
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Q7525674 Q7525674 STMicroelectronics Description: KIT ESD PROTECT 13 VALUE 10EA
Packaging: Box
Mounting Type: Surface Mount
Quantity: 130 Pieces (13 Values - 10 Each)
Kit Type: ESD Protection
Voltage - Breakdown: 5V ~ 14.5V
Produkt ist nicht verfügbar
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Q7525700 Q7525700 STMicroelectronics Description: KIT ESD PROTECT 16 VALUE 10EA
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M41ST85WMX6TR M41ST85WMX6TR STMicroelectronics en.CD00002304.pdf Description: IC RTC CLOCK/CALENDAR I2C 28SO
Packaging: Cut Tape (CT)
Features: Alarm, Leap Year, NVSRAM, Square Wave Output, Supervisor, Watchdog Timer
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 44B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Time Format: HH:MM:SS:hh (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 28-SO
Voltage - Supply, Battery: 2.5V ~ 3.5V
Current - Timekeeping (Max): 0.5mA @ 2.7V ~ 3.6V
Part Status: Active
DigiKey Programmable: Not Verified
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2+11.97 EUR
10+9.25 EUR
25+8.57 EUR
100+7.83 EUR
250+7.47 EUR
500+7.26 EUR
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LIS2DHTR LIS2DHTR STMicroelectronics Description: ACCEL 2-16G I2C/SPI 14LGA
Packaging: Cut Tape (CT)
Features: Adjustable Bandwidth, Selectable Scale, Sleep Mode, Temperature Sensor
Package / Case: 14-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Type: Digital
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g, 16g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.6V
Bandwidth: 0.5Hz ~ 672Hz
Supplier Device Package: 14-LGA (2x2)
Sensitivity (LSB/g): 1000 (±2g) ~ 83 (±16g)
Part Status: Obsolete
Produkt ist nicht verfügbar
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STBLC01QTR STBLC01QTR STMicroelectronics DM00051480.pdf Description: IC BLUETOOTH CTLR 24VFQFPN
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M24LR64E-RMN6T/2 M24LR64E-R.pdf
M24LR64E-RMN6T/2
Hersteller: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 10000 Stücke:
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Anzahl Preis
2500+1.84 EUR
5000+1.77 EUR
7500+1.73 EUR
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M24LR64E-RDW6T/2 M24LR64E-R.pdf
M24LR64E-RDW6T/2
Hersteller: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-TSSOP
Part Status: Active
auf Bestellung 4000 Stücke:
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Anzahl Preis
4000+1.66 EUR
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M24LR64E-RMC6T/2 M24LR64E-R.pdf
M24LR64E-RMC6T/2
Hersteller: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-UFDFPN (2x3)
Part Status: Active
auf Bestellung 10000 Stücke:
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Anzahl Preis
5000+1.67 EUR
10000+1.61 EUR
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M24LR04E-RMC6T/2 en.DM00038059.pdf
M24LR04E-RMC6T/2
Hersteller: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8UFDFPN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-UFDFPN (2x3)
Part Status: Active
auf Bestellung 65000 Stücke:
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Anzahl Preis
5000+0.88 EUR
10000+0.84 EUR
15000+0.83 EUR
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STM8A-DISCOVERY en.DM00065987.pdf
STM8A-DISCOVERY
Hersteller: STMicroelectronics
Description: DISCOVERY STM8A EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), LCD
Core Processor: STM8
Board Type: Evaluation Platform
Utilized IC / Part: STM8A
Platform: Discovery
Part Status: Not For New Designs
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M24LR64E-RMN6T/2 M24LR64E-R.pdf
M24LR64E-RMN6T/2
Hersteller: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 12355 Stücke:
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Anzahl Preis
6+2.97 EUR
10+2.56 EUR
25+2.41 EUR
100+2.22 EUR
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M24LR64E-RDW6T/2 M24LR64E-R.pdf
M24LR64E-RDW6T/2
Hersteller: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-TSSOP
Part Status: Active
auf Bestellung 6159 Stücke:
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Anzahl Preis
7+2.76 EUR
10+2.37 EUR
25+2.24 EUR
100+2.06 EUR
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M24LR64E-RMC6T/2 M24LR64E-R.pdf
M24LR64E-RMC6T/2
Hersteller: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-UFDFPN (2x3)
Part Status: Active
auf Bestellung 15280 Stücke:
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Anzahl Preis
6+3.27 EUR
10+2.83 EUR
25+2.67 EUR
100+2.45 EUR
250+2.32 EUR
500+2.23 EUR
1000+2.14 EUR
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M24LR04E-RMC6T/2 en.DM00038059.pdf
M24LR04E-RMC6T/2
Hersteller: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8UFDFPN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-UFDFPN (2x3)
Part Status: Active
auf Bestellung 71681 Stücke:
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Anzahl Preis
10+1.85 EUR
12+1.6 EUR
25+1.51 EUR
100+1.38 EUR
250+1.31 EUR
500+1.25 EUR
1000+1.2 EUR
Mindestbestellmenge: 10
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STLBC01QTR STLBC01.pdf
STLBC01QTR
Hersteller: STMicroelectronics
Description: IC LOW ENERGY CTLR 24VFQFPN
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STEVAL-IDS001V2
STEVAL-IDS001V2
Hersteller: STMicroelectronics
Description: EVAL CARD USB TXRX 315MHZ
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STEVAL-IDS001V5
STEVAL-IDS001V5
Hersteller: STMicroelectronics
Description: EVAL CARD USB TXRX 915MHZ
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STLBC01QTR STLBC01.pdf
STLBC01QTR
Hersteller: STMicroelectronics
Description: IC LOW ENERGY CTLR 24VFQFPN
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STLBC01QTR STLBC01.pdf
STLBC01QTR
Hersteller: STMicroelectronics
Description: IC LOW ENERGY CTLR 24VFQFPN
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STH270N4F3-2
STH270N4F3-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STL6N2VH5 en.DM00053721.pdf
STL6N2VH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 20V POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: PowerFlat™ (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 16 V
Produkt ist nicht verfügbar
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STQ1HN60K3-AP STQ1HN60K3-AP.pdf
STQ1HN60K3-AP
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 400MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Produkt ist nicht verfügbar
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STL45N65M5 en.DM00058185.pdf
STL45N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 22.5A PWRFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Produkt ist nicht verfügbar
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STL8N80K5 en.DM00072732.pdf
STL8N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 4.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Produkt ist nicht verfügbar
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STWA88N65M5 en.DM00042858.pdf
STWA88N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 84A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8825 pF @ 100 V
auf Bestellung 592 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.98 EUR
30+12.39 EUR
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STF13N80K5 en.DM00079143.pdf
STF13N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 864 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.21 EUR
50+3.44 EUR
100+3.23 EUR
500+2.59 EUR
Mindestbestellmenge: 3
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STGP20V60DF en.DM00079434.pdf
STGP20V60DF
Hersteller: STMicroelectronics
Description: IGBT 600V 40A 167W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
Produkt ist nicht verfügbar
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STGP30V60DF stgb30v60df.pdf
STGP30V60DF
Hersteller: STMicroelectronics
Description: IGBT 600V 60A 258W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
Produkt ist nicht verfügbar
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STGW20V60DF en.DM00079434.pdf
STGW20V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 40A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
auf Bestellung 389 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.65 EUR
30+3.67 EUR
120+3.01 EUR
Mindestbestellmenge: 3
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STGW30H60DF en.DM00040343.pdf
STGW30H60DF
Hersteller: STMicroelectronics
Description: IGBT 600V 60A 260W TO247
Produkt ist nicht verfügbar
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STGW40V60DF en.DM00080360.pdf
STGW40V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
auf Bestellung 135 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.16 EUR
30+3.96 EUR
120+3.26 EUR
Mindestbestellmenge: 3
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STGW60V60DF en.DM00074810.pdf
STGW60V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/208ns
Switching Energy: 750µJ (on), 550µJ (off)
Test Condition: 400V, 60A, 4.7Ohm, 15V
Gate Charge: 334 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 375 W
auf Bestellung 2522 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.16 EUR
30+3.99 EUR
120+3.29 EUR
510+2.78 EUR
1020+2.59 EUR
2010+2.58 EUR
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STGWT20V60DF en.DM00079434.pdf
STGWT20V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
Produkt ist nicht verfügbar
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STGWT30V60DF stgb30v60df.pdf
STGWT30V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
Produkt ist nicht verfügbar
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STGWT40V60DLF
STGWT40V60DLF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/208ns
Switching Energy: 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Produkt ist nicht verfügbar
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STI24N60M2 en.DM00070788.pdf
STI24N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.14 EUR
50+2.05 EUR
100+2.02 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
STW19NM60N en.DM00080239.pdf
STW19NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STD25NF20 en.DM00079534.pdf
STD25NF20
Hersteller: STMicroelectronics
Description: MOSFET N-CH 200V 18A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2549 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.99 EUR
10+2.07 EUR
100+1.57 EUR
500+1.26 EUR
1000+1.23 EUR
Mindestbestellmenge: 6
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STH270N4F3-2
STH270N4F3-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STL45N65M5 en.DM00058185.pdf
STL45N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 22.5A PWRFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Produkt ist nicht verfügbar
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STL8N80K5 en.DM00072732.pdf
STL8N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 4.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 2006 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.54 EUR
10+3.63 EUR
100+2.76 EUR
500+2.23 EUR
Mindestbestellmenge: 4
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STGIPS30C60-H
STGIPS30C60-H
Hersteller: STMicroelectronics
Description: MOD IPM SLLIMM 30A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STL6N2VH5 en.DM00053721.pdf
STL6N2VH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 20V POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: PowerFlat™ (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 16 V
auf Bestellung 2834 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
18+1 EUR
100+0.68 EUR
500+0.55 EUR
1000+0.5 EUR
Mindestbestellmenge: 13
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STT5N2VH5 en.DM00111322.pdf
STT5N2VH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 20V SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
auf Bestellung 10626 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
24+0.76 EUR
100+0.49 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 15
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STT5N2VH5 en.DM00111322.pdf
STT5N2VH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 20V SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
6000+0.27 EUR
Mindestbestellmenge: 3000
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STQ1HN60K3-AP STQ1HN60K3-AP.pdf
STQ1HN60K3-AP
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 400MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Produkt ist nicht verfügbar
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STGIPS20C60
STGIPS20C60
Hersteller: STMicroelectronics
Description: MOD IPM SLLIMM 20A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGW40V60DLF
STGW40V60DLF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/208ns
Switching Energy: 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Produkt ist nicht verfügbar
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STGWT40V60DF en.DM00080360.pdf
STGWT40V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STS3P6F6 en.DM00080977.pdf
STS3P6F6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 60V 3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
Produkt ist nicht verfügbar
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STGW30V60DF stgb30v60df.pdf
STGW30V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
auf Bestellung 666 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.12 EUR
30+3.36 EUR
120+2.75 EUR
510+2.31 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STP13N80K5 en.DM00079143.pdf
STP13N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 321 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.65 EUR
50+3.09 EUR
100+2.9 EUR
Mindestbestellmenge: 4
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STS3P6F6 en.DM00080977.pdf
STS3P6F6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 60V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
Produkt ist nicht verfügbar
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STU1HN60K3 en.DM00080877.pdf
STU1HN60K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 1.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Produkt ist nicht verfügbar
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STD25NF20 en.DM00079534.pdf
STD25NF20
Hersteller: STMicroelectronics
Description: MOSFET N-CH 200V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.05 EUR
Mindestbestellmenge: 2500
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Q7525663
Q7525663
Hersteller: STMicroelectronics
Description: KIT ESD PROTECT 16 VALUE 10EA
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
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Q7525688
Q7525688
Hersteller: STMicroelectronics
Description: KIT ESD PROTECT 10 VALUE 10EA
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
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Q7525712
Q7525712
Hersteller: STMicroelectronics
Description: KIT ESD PROTECT 16 VALUE 10EA
Packaging: Box
Mounting Type: Surface Mount
Quantity: 160 Pieces (16 Values - 10 Each)
Kit Type: ESD Protection
Voltage - Breakdown: 6V ~ 15V
Produkt ist nicht verfügbar
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Q7668862
Q7668862
Hersteller: STMicroelectronics
Description: KIT ESD PROTECT 16 VALUE 10EA
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
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Q7521514
Q7521514
Hersteller: STMicroelectronics
Description: KIT ESD PROTECT 7 VALUE 10EA
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
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Q7525674
Q7525674
Hersteller: STMicroelectronics
Description: KIT ESD PROTECT 13 VALUE 10EA
Packaging: Box
Mounting Type: Surface Mount
Quantity: 130 Pieces (13 Values - 10 Each)
Kit Type: ESD Protection
Voltage - Breakdown: 5V ~ 14.5V
Produkt ist nicht verfügbar
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Q7525700
Q7525700
Hersteller: STMicroelectronics
Description: KIT ESD PROTECT 16 VALUE 10EA
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
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M41ST85WMX6TR en.CD00002304.pdf
M41ST85WMX6TR
Hersteller: STMicroelectronics
Description: IC RTC CLOCK/CALENDAR I2C 28SO
Packaging: Cut Tape (CT)
Features: Alarm, Leap Year, NVSRAM, Square Wave Output, Supervisor, Watchdog Timer
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 44B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Time Format: HH:MM:SS:hh (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 28-SO
Voltage - Supply, Battery: 2.5V ~ 3.5V
Current - Timekeeping (Max): 0.5mA @ 2.7V ~ 3.6V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3598 Stücke:
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Anzahl Preis
2+11.97 EUR
10+9.25 EUR
25+8.57 EUR
100+7.83 EUR
250+7.47 EUR
500+7.26 EUR
Mindestbestellmenge: 2
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LIS2DHTR
LIS2DHTR
Hersteller: STMicroelectronics
Description: ACCEL 2-16G I2C/SPI 14LGA
Packaging: Cut Tape (CT)
Features: Adjustable Bandwidth, Selectable Scale, Sleep Mode, Temperature Sensor
Package / Case: 14-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Type: Digital
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g, 16g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.6V
Bandwidth: 0.5Hz ~ 672Hz
Supplier Device Package: 14-LGA (2x2)
Sensitivity (LSB/g): 1000 (±2g) ~ 83 (±16g)
Part Status: Obsolete
Produkt ist nicht verfügbar
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STBLC01QTR DM00051480.pdf
STBLC01QTR
Hersteller: STMicroelectronics
Description: IC BLUETOOTH CTLR 24VFQFPN
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
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