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LDK130C18R LDK130C18R STMicroelectronics en.DM00076097.pdf Description: IC REG LIN 1.8V 300MA SOT-323-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 120 µA
auf Bestellung 2321 Stücke:
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33+0.54 EUR
37+0.49 EUR
100+0.42 EUR
250+0.39 EUR
500+0.37 EUR
1000+0.36 EUR
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LDK130C33R LDK130C33R STMicroelectronics en.DM00076097.pdf Description: IC REG LIN 3.3V 300MA SOT323-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 120 µA
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LDK130C33R LDK130C33R STMicroelectronics en.DM00076097.pdf Description: IC REG LIN 3.3V 300MA SOT323-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 120 µA
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VNI8200XPTR VNI8200XPTR STMicroelectronics vni8200xp.pdf Description: IC PWR DRVR N-CHAN 1:1 PWRSSO36
Features: Power Good, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerFSOP (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Voltage - Load: 10.5V ~ 36V
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PowerSSO-36 EPD
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
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VNI8200XPTR VNI8200XPTR STMicroelectronics vni8200xp.pdf Description: IC PWR DRVR N-CHAN 1:1 PWRSSO36
Features: Power Good, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 36-PowerFSOP (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Voltage - Load: 10.5V ~ 36V
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PowerSSO-36 EPD
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
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L6718TR L6718TR STMicroelectronics L6718.pdf Description: IC REG CTRLR VR12 2OUT 56VFQFPN
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L6718TR L6718TR STMicroelectronics L6718.pdf Description: IC REG CTRLR VR12 2OUT 56VFQFPN
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STLUX385ATR STLUX385ATR STMicroelectronics en.DM00185105.pdf Description: IC DIGITAL CTLR 38TSSOP
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STLUX385ATR STLUX385ATR STMicroelectronics en.DM00185105.pdf Description: IC DIGITAL CTLR 38TSSOP
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STM32WC-RFCKIT STM32WC-RFCKIT STMicroelectronics STM32W-RFCKIT_Dec2012_br.pdf Description: STM32W RF CONTROL KIT
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STM32303C-EVAL STM32303C-EVAL STMicroelectronics en.DM00058181.pdf Description: STM32F303 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s), LCD
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F303
Part Status: Obsolete
Produkt ist nicht verfügbar
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STM32W108C-SK STM32W108C-SK STMicroelectronics en.CD00285442.pdf Description: EVAL BOARD FOR STM32W108
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M24LR64E-RMN6T/2 M24LR64E-RMN6T/2 STMicroelectronics M24LR64E-R.pdf Description: IC RFID TRANSP 13.56MHZ 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 7500 Stücke:
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M24LR64E-RDW6T/2 M24LR64E-RDW6T/2 STMicroelectronics M24LR64E-R.pdf Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-TSSOP
Part Status: Active
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M24LR64E-RMC6T/2 M24LR64E-RMC6T/2 STMicroelectronics M24LR64E-R.pdf Description: IC RFID TRANSP 13.56MHZ 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-UFDFPN (2x3)
Part Status: Active
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5000+1.8 EUR
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M24LR04E-RMC6T/2 M24LR04E-RMC6T/2 STMicroelectronics en.DM00038059.pdf Description: IC RFID TRANSP 13.56MHZ 8UFDFPN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-UFDFPN (2x3)
Part Status: Active
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5000+0.84 EUR
10000+0.81 EUR
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STM8A-DISCOVERY STM8A-DISCOVERY STMicroelectronics en.DM00065987.pdf Description: DISCOVERY STM8A EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), LCD
Core Processor: STM8
Board Type: Evaluation Platform
Utilized IC / Part: STM8A
Platform: Discovery
Part Status: Not For New Designs
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M24LR64E-RMN6T/2 M24LR64E-RMN6T/2 STMicroelectronics M24LR64E-R.pdf Description: IC RFID TRANSP 13.56MHZ 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 9863 Stücke:
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M24LR64E-RDW6T/2 M24LR64E-RDW6T/2 STMicroelectronics M24LR64E-R.pdf Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-TSSOP
Part Status: Active
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7+2.76 EUR
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M24LR64E-RMC6T/2 M24LR64E-RMC6T/2 STMicroelectronics M24LR64E-R.pdf Description: IC RFID TRANSP 13.56MHZ 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-UFDFPN (2x3)
Part Status: Active
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6+3.01 EUR
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M24LR04E-RMC6T/2 M24LR04E-RMC6T/2 STMicroelectronics en.DM00038059.pdf Description: IC RFID TRANSP 13.56MHZ 8UFDFPN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-UFDFPN (2x3)
Part Status: Active
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STLBC01QTR STLBC01QTR STMicroelectronics STLBC01.pdf Description: IC LOW ENERGY CTLR 24VFQFPN
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STEVAL-IDS001V2 STEVAL-IDS001V2 STMicroelectronics Description: EVAL CARD USB TXRX 315MHZ
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STEVAL-IDS001V5 STEVAL-IDS001V5 STMicroelectronics Description: EVAL CARD USB TXRX 915MHZ
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STLBC01QTR STLBC01QTR STMicroelectronics STLBC01.pdf Description: IC LOW ENERGY CTLR 24VFQFPN
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STLBC01QTR STLBC01QTR STMicroelectronics STLBC01.pdf Description: IC LOW ENERGY CTLR 24VFQFPN
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STH270N4F3-2 STH270N4F3-2 STMicroelectronics Description: MOSFET N-CH 40V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STL6N2VH5 STL6N2VH5 STMicroelectronics en.DM00053721.pdf Description: MOSFET N-CH 20V POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: PowerFlat™ (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 16 V
Produkt ist nicht verfügbar
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STQ1HN60K3-AP STQ1HN60K3-AP STMicroelectronics STQ1HN60K3-AP.pdf Description: MOSFET N-CH 600V 400MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Produkt ist nicht verfügbar
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STL45N65M5 STL45N65M5 STMicroelectronics en.DM00058185.pdf Description: MOSFET N-CH 650V 22.5A PWRFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Produkt ist nicht verfügbar
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STL8N80K5 STL8N80K5 STMicroelectronics en.DM00072732.pdf Description: MOSFET N-CH 800V 4.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
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STWA88N65M5 STWA88N65M5 STMicroelectronics en.DM00042858.pdf Description: MOSFET N-CH 650V 84A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8825 pF @ 100 V
auf Bestellung 544 Stücke:
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STF13N80K5 STF13N80K5 STMicroelectronics en.DM00079143.pdf Description: MOSFET N-CH 800V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 851 Stücke:
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3+6.55 EUR
50+3.37 EUR
100+3.06 EUR
500+2.52 EUR
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STGP20V60DF STGP20V60DF STMicroelectronics en.DM00079434.pdf Description: IGBT TRENCH FS 600V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
auf Bestellung 1000 Stücke:
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50+1.98 EUR
100+1.78 EUR
500+1.43 EUR
1000+1.32 EUR
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STGP30V60DF STGP30V60DF STMicroelectronics stgb30v60df.pdf Description: IGBT TRENCH FS 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
Produkt ist nicht verfügbar
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STGW20V60DF STGW20V60DF STMicroelectronics en.DM00079434.pdf Description: IGBT TRENCH FS 600V 40A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
auf Bestellung 389 Stücke:
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3+6.65 EUR
30+3.67 EUR
120+3.01 EUR
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STGW30H60DF STGW30H60DF STMicroelectronics en.DM00040343.pdf Description: IGBT 600V 60A 260W TO247
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STGW40V60DF STGW40V60DF STMicroelectronics en.DM00080360.pdf Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
auf Bestellung 532 Stücke:
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3+6.3 EUR
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120+2.86 EUR
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STGW60V60DF STGW60V60DF STMicroelectronics en.DM00074810.pdf Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/208ns
Switching Energy: 750µJ (on), 550µJ (off)
Test Condition: 400V, 60A, 4.7Ohm, 15V
Gate Charge: 334 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 375 W
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STGWT20V60DF STGWT20V60DF STMicroelectronics en.DM00079434.pdf Description: IGBT TRENCH FS 600V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
Produkt ist nicht verfügbar
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STGWT30V60DF STGWT30V60DF STMicroelectronics stgb30v60df.pdf Description: IGBT TRENCH FS 600V 60A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
Produkt ist nicht verfügbar
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STGWT40V60DLF STGWT40V60DLF STMicroelectronics Description: IGBT TRENCH FS 600V 80A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/208ns
Switching Energy: 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Produkt ist nicht verfügbar
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STI24N60M2 STI24N60M2 STMicroelectronics en.DM00070788.pdf Description: MOSFET N-CH 600V 18A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
auf Bestellung 1170 Stücke:
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4+4.44 EUR
50+2.2 EUR
100+1.98 EUR
500+1.6 EUR
1000+1.48 EUR
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STW19NM60N STW19NM60N STMicroelectronics en.DM00080239.pdf Description: MOSFET N-CH 600V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STD25NF20 STD25NF20 STMicroelectronics en.DM00079534.pdf Description: MOSFET N-CH 200V 18A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2549 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.99 EUR
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100+1.57 EUR
500+1.26 EUR
1000+1.23 EUR
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STH270N4F3-2 STH270N4F3-2 STMicroelectronics Description: MOSFET N-CH 40V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STL45N65M5 STL45N65M5 STMicroelectronics en.DM00058185.pdf Description: MOSFET N-CH 650V 22.5A PWRFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Produkt ist nicht verfügbar
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STL8N80K5 STL8N80K5 STMicroelectronics en.DM00072732.pdf Description: MOSFET N-CH 800V 4.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 1106 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.63 EUR
10+3.67 EUR
100+2.57 EUR
500+2.26 EUR
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STGIPS30C60-H STGIPS30C60-H STMicroelectronics Description: MOD IPM SLLIMM 30A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STL6N2VH5 STL6N2VH5 STMicroelectronics en.DM00053721.pdf Description: MOSFET N-CH 20V POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: PowerFlat™ (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 16 V
auf Bestellung 2034 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.58 EUR
18+0.99 EUR
100+0.65 EUR
500+0.5 EUR
1000+0.45 EUR
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STT5N2VH5 STT5N2VH5 STMicroelectronics en.DM00111322.pdf Description: MOSFET N-CH 20V SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
auf Bestellung 10626 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.25 EUR
23+0.77 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 15
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STT5N2VH5 STT5N2VH5 STMicroelectronics en.DM00111322.pdf Description: MOSFET N-CH 20V SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
auf Bestellung 6000 Stücke:
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3000+0.29 EUR
6000+0.27 EUR
Mindestbestellmenge: 3000
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STGIPS20C60 STGIPS20C60 STMicroelectronics Description: MOD IPM SLLIMM 20A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGW40V60DLF STGW40V60DLF STMicroelectronics Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/208ns
Switching Energy: 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Produkt ist nicht verfügbar
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STGWT40V60DF STGWT40V60DF STMicroelectronics en.DM00080360.pdf Description: IGBT TRENCH FS 600V 80A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Produkt ist nicht verfügbar
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STS3P6F6 STS3P6F6 STMicroelectronics en.DM00080977.pdf Description: MOSFET P-CH 60V 3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
Produkt ist nicht verfügbar
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STGW30V60DF STGW30V60DF STMicroelectronics stgb30v60df.pdf Description: IGBT TRENCH FS 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
auf Bestellung 309 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.67 EUR
30+3.1 EUR
120+2.53 EUR
Mindestbestellmenge: 4
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STP13N80K5 STP13N80K5 STMicroelectronics en.DM00079143.pdf Description: MOSFET N-CH 800V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Produkt ist nicht verfügbar
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STS3P6F6 STS3P6F6 STMicroelectronics en.DM00080977.pdf Description: MOSFET P-CH 60V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
Produkt ist nicht verfügbar
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STU1HN60K3 STU1HN60K3 STMicroelectronics en.DM00080877.pdf Description: MOSFET N-CH 600V 1.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Produkt ist nicht verfügbar
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LDK130C18R en.DM00076097.pdf
LDK130C18R
Hersteller: STMicroelectronics
Description: IC REG LIN 1.8V 300MA SOT-323-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 120 µA
auf Bestellung 2321 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
33+0.54 EUR
37+0.49 EUR
100+0.42 EUR
250+0.39 EUR
500+0.37 EUR
1000+0.36 EUR
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LDK130C33R en.DM00076097.pdf
LDK130C33R
Hersteller: STMicroelectronics
Description: IC REG LIN 3.3V 300MA SOT323-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 120 µA
Produkt ist nicht verfügbar
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LDK130C33R en.DM00076097.pdf
LDK130C33R
Hersteller: STMicroelectronics
Description: IC REG LIN 3.3V 300MA SOT323-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 120 µA
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
21+0.86 EUR
25+0.81 EUR
100+0.66 EUR
250+0.61 EUR
500+0.52 EUR
1000+0.42 EUR
Mindestbestellmenge: 19
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VNI8200XPTR vni8200xp.pdf
VNI8200XPTR
Hersteller: STMicroelectronics
Description: IC PWR DRVR N-CHAN 1:1 PWRSSO36
Features: Power Good, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerFSOP (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Voltage - Load: 10.5V ~ 36V
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PowerSSO-36 EPD
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
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VNI8200XPTR vni8200xp.pdf
VNI8200XPTR
Hersteller: STMicroelectronics
Description: IC PWR DRVR N-CHAN 1:1 PWRSSO36
Features: Power Good, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 36-PowerFSOP (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Voltage - Load: 10.5V ~ 36V
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PowerSSO-36 EPD
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 597 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.47 EUR
10+11.27 EUR
25+10.48 EUR
100+9.6 EUR
250+9.18 EUR
500+8.93 EUR
Mindestbestellmenge: 2
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L6718TR L6718.pdf
L6718TR
Hersteller: STMicroelectronics
Description: IC REG CTRLR VR12 2OUT 56VFQFPN
Produkt ist nicht verfügbar
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L6718TR L6718.pdf
L6718TR
Hersteller: STMicroelectronics
Description: IC REG CTRLR VR12 2OUT 56VFQFPN
Produkt ist nicht verfügbar
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STLUX385ATR en.DM00185105.pdf
STLUX385ATR
Hersteller: STMicroelectronics
Description: IC DIGITAL CTLR 38TSSOP
Produkt ist nicht verfügbar
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STLUX385ATR en.DM00185105.pdf
STLUX385ATR
Hersteller: STMicroelectronics
Description: IC DIGITAL CTLR 38TSSOP
auf Bestellung 3959 Stücke:
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STM32WC-RFCKIT STM32W-RFCKIT_Dec2012_br.pdf
STM32WC-RFCKIT
Hersteller: STMicroelectronics
Description: STM32W RF CONTROL KIT
Produkt ist nicht verfügbar
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STM32303C-EVAL en.DM00058181.pdf
STM32303C-EVAL
Hersteller: STMicroelectronics
Description: STM32F303 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s), LCD
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F303
Part Status: Obsolete
Produkt ist nicht verfügbar
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STM32W108C-SK en.CD00285442.pdf
STM32W108C-SK
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR STM32W108
auf Bestellung 2 Stücke:
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M24LR64E-RMN6T/2 M24LR64E-R.pdf
M24LR64E-RMN6T/2
Hersteller: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.71 EUR
5000+1.64 EUR
7500+1.61 EUR
Mindestbestellmenge: 2500
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M24LR64E-RDW6T/2 M24LR64E-R.pdf
M24LR64E-RDW6T/2
Hersteller: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
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M24LR64E-RMC6T/2 M24LR64E-R.pdf
M24LR64E-RMC6T/2
Hersteller: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-UFDFPN (2x3)
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.8 EUR
Mindestbestellmenge: 5000
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M24LR04E-RMC6T/2 en.DM00038059.pdf
M24LR04E-RMC6T/2
Hersteller: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8UFDFPN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-UFDFPN (2x3)
Part Status: Active
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.84 EUR
10000+0.81 EUR
15000+0.79 EUR
Mindestbestellmenge: 5000
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STM8A-DISCOVERY en.DM00065987.pdf
STM8A-DISCOVERY
Hersteller: STMicroelectronics
Description: DISCOVERY STM8A EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), LCD
Core Processor: STM8
Board Type: Evaluation Platform
Utilized IC / Part: STM8A
Platform: Discovery
Part Status: Not For New Designs
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+39.69 EUR
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M24LR64E-RMN6T/2 M24LR64E-R.pdf
M24LR64E-RMN6T/2
Hersteller: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 9863 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.76 EUR
10+2.38 EUR
25+2.24 EUR
100+2.06 EUR
250+1.95 EUR
500+1.87 EUR
1000+1.8 EUR
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M24LR64E-RDW6T/2 M24LR64E-R.pdf
M24LR64E-RDW6T/2
Hersteller: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-TSSOP
Part Status: Active
auf Bestellung 3711 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.76 EUR
10+2.38 EUR
25+2.24 EUR
100+2.06 EUR
250+1.95 EUR
500+1.87 EUR
1000+1.8 EUR
Mindestbestellmenge: 7
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M24LR64E-RMC6T/2 M24LR64E-R.pdf
M24LR64E-RMC6T/2
Hersteller: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-UFDFPN (2x3)
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.01 EUR
10+2.6 EUR
25+2.46 EUR
100+2.26 EUR
250+2.14 EUR
500+2.05 EUR
1000+1.97 EUR
Mindestbestellmenge: 6
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M24LR04E-RMC6T/2 en.DM00038059.pdf
M24LR04E-RMC6T/2
Hersteller: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8UFDFPN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-UFDFPN (2x3)
Part Status: Active
auf Bestellung 58931 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
13+1.44 EUR
25+1.36 EUR
100+1.25 EUR
250+1.18 EUR
500+1.13 EUR
1000+1.09 EUR
Mindestbestellmenge: 11
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STLBC01QTR STLBC01.pdf
STLBC01QTR
Hersteller: STMicroelectronics
Description: IC LOW ENERGY CTLR 24VFQFPN
Produkt ist nicht verfügbar
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STEVAL-IDS001V2
STEVAL-IDS001V2
Hersteller: STMicroelectronics
Description: EVAL CARD USB TXRX 315MHZ
auf Bestellung 6 Stücke:
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STEVAL-IDS001V5
STEVAL-IDS001V5
Hersteller: STMicroelectronics
Description: EVAL CARD USB TXRX 915MHZ
auf Bestellung 8 Stücke:
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STLBC01QTR STLBC01.pdf
STLBC01QTR
Hersteller: STMicroelectronics
Description: IC LOW ENERGY CTLR 24VFQFPN
Produkt ist nicht verfügbar
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STLBC01QTR STLBC01.pdf
STLBC01QTR
Hersteller: STMicroelectronics
Description: IC LOW ENERGY CTLR 24VFQFPN
Produkt ist nicht verfügbar
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STH270N4F3-2
STH270N4F3-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STL6N2VH5 en.DM00053721.pdf
STL6N2VH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 20V POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: PowerFlat™ (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 16 V
Produkt ist nicht verfügbar
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STQ1HN60K3-AP STQ1HN60K3-AP.pdf
STQ1HN60K3-AP
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 400MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Produkt ist nicht verfügbar
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STL45N65M5 en.DM00058185.pdf
STL45N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 22.5A PWRFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Produkt ist nicht verfügbar
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STL8N80K5 en.DM00072732.pdf
STL8N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 4.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Produkt ist nicht verfügbar
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STWA88N65M5 en.DM00042858.pdf
STWA88N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 84A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8825 pF @ 100 V
auf Bestellung 544 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.57 EUR
30+12.08 EUR
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STF13N80K5 en.DM00079143.pdf
STF13N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 851 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.55 EUR
50+3.37 EUR
100+3.06 EUR
500+2.52 EUR
Mindestbestellmenge: 3
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STGP20V60DF en.DM00079434.pdf
STGP20V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.03 EUR
50+1.98 EUR
100+1.78 EUR
500+1.43 EUR
1000+1.32 EUR
Mindestbestellmenge: 5
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STGP30V60DF stgb30v60df.pdf
STGP30V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
Produkt ist nicht verfügbar
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STGW20V60DF en.DM00079434.pdf
STGW20V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 40A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
auf Bestellung 389 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.65 EUR
30+3.67 EUR
120+3.01 EUR
Mindestbestellmenge: 3
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STGW30H60DF en.DM00040343.pdf
STGW30H60DF
Hersteller: STMicroelectronics
Description: IGBT 600V 60A 260W TO247
Produkt ist nicht verfügbar
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STGW40V60DF en.DM00080360.pdf
STGW40V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
auf Bestellung 532 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.3 EUR
30+3.48 EUR
120+2.86 EUR
510+2.4 EUR
Mindestbestellmenge: 3
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STGW60V60DF en.DM00074810.pdf
STGW60V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/208ns
Switching Energy: 750µJ (on), 550µJ (off)
Test Condition: 400V, 60A, 4.7Ohm, 15V
Gate Charge: 334 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 375 W
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
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STGWT20V60DF en.DM00079434.pdf
STGWT20V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
Produkt ist nicht verfügbar
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STGWT30V60DF stgb30v60df.pdf
STGWT30V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
Produkt ist nicht verfügbar
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STGWT40V60DLF
STGWT40V60DLF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/208ns
Switching Energy: 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Produkt ist nicht verfügbar
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STI24N60M2 en.DM00070788.pdf
STI24N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
auf Bestellung 1170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.44 EUR
50+2.2 EUR
100+1.98 EUR
500+1.6 EUR
1000+1.48 EUR
Mindestbestellmenge: 4
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STW19NM60N en.DM00080239.pdf
STW19NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STD25NF20 en.DM00079534.pdf
STD25NF20
Hersteller: STMicroelectronics
Description: MOSFET N-CH 200V 18A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2549 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.99 EUR
10+2.07 EUR
100+1.57 EUR
500+1.26 EUR
1000+1.23 EUR
Mindestbestellmenge: 6
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STH270N4F3-2
STH270N4F3-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STL45N65M5 en.DM00058185.pdf
STL45N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 22.5A PWRFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Produkt ist nicht verfügbar
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STL8N80K5 en.DM00072732.pdf
STL8N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 4.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 1106 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.63 EUR
10+3.67 EUR
100+2.57 EUR
500+2.26 EUR
Mindestbestellmenge: 4
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STGIPS30C60-H
STGIPS30C60-H
Hersteller: STMicroelectronics
Description: MOD IPM SLLIMM 30A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STL6N2VH5 en.DM00053721.pdf
STL6N2VH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 20V POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: PowerFlat™ (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 16 V
auf Bestellung 2034 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
18+0.99 EUR
100+0.65 EUR
500+0.5 EUR
1000+0.45 EUR
Mindestbestellmenge: 12
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STT5N2VH5 en.DM00111322.pdf
STT5N2VH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 20V SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
auf Bestellung 10626 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
23+0.77 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 15
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STT5N2VH5 en.DM00111322.pdf
STT5N2VH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 20V SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
6000+0.27 EUR
Mindestbestellmenge: 3000
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STGIPS20C60
STGIPS20C60
Hersteller: STMicroelectronics
Description: MOD IPM SLLIMM 20A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGW40V60DLF
STGW40V60DLF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/208ns
Switching Energy: 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Produkt ist nicht verfügbar
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STGWT40V60DF en.DM00080360.pdf
STGWT40V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Produkt ist nicht verfügbar
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STS3P6F6 en.DM00080977.pdf
STS3P6F6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 60V 3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
Produkt ist nicht verfügbar
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STGW30V60DF stgb30v60df.pdf
STGW30V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
auf Bestellung 309 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.67 EUR
30+3.1 EUR
120+2.53 EUR
Mindestbestellmenge: 4
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STP13N80K5 en.DM00079143.pdf
STP13N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Produkt ist nicht verfügbar
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STS3P6F6 en.DM00080977.pdf
STS3P6F6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 60V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
Produkt ist nicht verfügbar
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STU1HN60K3 en.DM00080877.pdf
STU1HN60K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 1.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Produkt ist nicht verfügbar
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