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ESDA6V1SC6Y ESDA6V1SC6Y STMicroelectronics en.DM00231412.pdf Description: TVS DIODE 5.2VWM 19VC SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 18A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.2V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.19 EUR
Mindestbestellmenge: 3000
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ESDA14V2SC5Y ESDA14V2SC5Y STMicroelectronics en.DM00231412.pdf Description: TVS DIODE 12VWM 35VC SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 14A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOT-23-5
Unidirectional Channels: 4
Voltage - Breakdown (Min): 14.2V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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3000+0.17 EUR
6000+0.16 EUR
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ESDALC6-4N4 ESDALC6-4N4 STMicroelectronics general-purpose-esd-protection.html Description: TVS DIODE 3VWM 10VC 4UQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 9.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 4-uQFN (1x0.8)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 27W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESDAVLC8-4BN4 ESDAVLC8-4BN4 STMicroelectronics protections-and-emi-filters.html Description: TVS DIODE 3VWM 28VC 4UQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 4.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 4-uQFN (1x0.8)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 45W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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ESDAXLC6-1BT2 ESDAXLC6-1BT2 STMicroelectronics en.DM00065056.pdf Description: TVS DIODE 3VWM 17VC SOD882T
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 200MHz ~ 3GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOD-882T
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
auf Bestellung 51689 Stücke:
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35+0.51 EUR
70+0.25 EUR
110+0.16 EUR
500+0.15 EUR
2000+0.12 EUR
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ESDAXLC6-1BU2 ESDAXLC6-1BU2 STMicroelectronics en.DM00065800.pdf Description: TVS DIODE 3VWM 17VC 0201
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 200MHz ~ 3GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
auf Bestellung 69637 Stücke:
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264+0.07 EUR
362+0.05 EUR
500+0.05 EUR
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ESDAXLC6-1BT2 ESDAXLC6-1BT2 STMicroelectronics en.DM00065056.pdf Description: TVS DIODE 3VWM 17VC SOD882T
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 200MHz ~ 3GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOD-882T
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
auf Bestellung 48000 Stücke:
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12000+0.09 EUR
24000+0.07 EUR
36000+0.07 EUR
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ESDAXLC6-1BU2 ESDAXLC6-1BU2 STMicroelectronics en.DM00065800.pdf Description: TVS DIODE 3VWM 17VC 0201
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 200MHz ~ 3GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
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15000+0.05 EUR
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PD85004 PD85004 STMicroelectronics Description: RF MOSFET LDMOS 13.6V SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Current Rating (Amps): 2A
Mounting Type: Surface Mount
Frequency: 870MHz
Power - Output: 4W
Gain: 17dB
Technology: LDMOS
Supplier Device Package: SOT-89-3
Part Status: Obsolete
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 50 mA
Produkt ist nicht verfügbar
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L6470PD L6470PD STMicroelectronics en.CD00255075.pdf Description: IC MOTOR DRIVER BIPLR 36POWERSSO
Packaging: Tube
Package / Case: 36-PowerBSSOP (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3.3V, 5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8V ~ 45V
Supplier Device Package: PowerSO-36 Slug Up
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/128
Part Status: Active
auf Bestellung 1282 Stücke:
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10+11.29 EUR
31+10.32 EUR
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279+9.12 EUR
527+8.89 EUR
1023+8.69 EUR
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L6480H L6480H STMicroelectronics en.DM00056884.pdf Description: IC MTR DRV BIPLR 3.3/5V 38HTSSOP
Packaging: Tube
Package / Case: 38-TFSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 3.3V, 5V
Applications: General Purpose
Technology: DMOS
Supplier Device Package: 38-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/128
Part Status: Active
auf Bestellung 264 Stücke:
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2+10.35 EUR
10+7.94 EUR
50+6.97 EUR
100+6.67 EUR
250+6.36 EUR
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LCP02-150B1RL LCP02-150B1RL STMicroelectronics LCP02-150B1.pdf Description: THYRISTOR 30A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Supplier Device Package: 8-SO
Part Status: Active
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 30 A
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5+4.22 EUR
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STTH2003CGY-TR STTH2003CGY-TR STMicroelectronics en.DM00040839.pdf Description: DIODE ARRAY GP 300V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
Produkt ist nicht verfügbar
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STTH602CBY-TR STTH602CBY-TR STMicroelectronics en.DM00056393.pdf Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ECMF02-4CMX8 ECMF02-4CMX8 STMicroelectronics en.DM00039389.pdf Description: CMC 2LN SMD ESD
Packaging: Tape & Reel (TR)
Features: TVS Diode ESD Protection
Package / Case: 8-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.047" W (2.50mm x 1.20mm)
Mounting Type: Surface Mount
Number of Lines: 2
Operating Temperature: -40°C ~ 125°C
Height (Max): 0.022" (0.55mm)
DC Resistance (DCR) (Max): 4Ohm
Part Status: Active
auf Bestellung 138000 Stücke:
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3000+0.42 EUR
6000+0.39 EUR
9000+0.38 EUR
15000+0.36 EUR
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STTH810GY-TR STTH810GY-TR STMicroelectronics en.DM00031453.pdf Description: DIODE STANDARD 1000V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ESDA25SC6Y ESDA25SC6Y STMicroelectronics en.DM00231412.pdf Description: TVS DIODE 24VWM 51VC SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 25V
Voltage - Clamping (Max) @ Ipp: 51V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
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3000+0.20 EUR
Mindestbestellmenge: 3000
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ESDA5V3SC6Y ESDA5V3SC6Y STMicroelectronics en.DM00231412.pdf Description: TVS DIODE 3VWM 21VC SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 22A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
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3000+0.20 EUR
Mindestbestellmenge: 3000
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STD65N3LLH5 STD65N3LLH5 STMicroelectronics en.CD00268670.pdf Description: MOSFET N CH 30V 65A DPAK
Produkt ist nicht verfügbar
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STTH1210DY STTH1210DY STMicroelectronics en.DM00031451.pdf Description: DIODE STANDARD 1000V 12A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
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STN9360 STN9360 STMicroelectronics en.DM00055595.pdf Description: TRANS PNP 600V 0.5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1.6 W
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1000+0.51 EUR
2000+0.47 EUR
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STPS20L60CGY-TR STPS20L60CGY-TR STMicroelectronics STPS20L60C-Y.pdf Description: DIODE ARRAY SCHOTT 60V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STPS340SY STPS340SY STMicroelectronics en.CD00270569.pdf Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
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2500+0.26 EUR
5000+0.24 EUR
7500+0.23 EUR
Mindestbestellmenge: 2500
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T830-8FP T830-8FP STMicroelectronics DM00058404.pdf Description: TRIAC ALTERNISTOR 800V TO220FPAB
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STPS340UY STPS340UY STMicroelectronics en.CD00270569.pdf Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STTH1003SBY-TR STTH1003SBY-TR STMicroelectronics en.DM00042790.pdf Description: DIODE STANDARD 300V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Grade: Automotive
Qualification: AEC-Q101
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2500+0.46 EUR
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STGIPL35K120L1 STGIPL35K120L1 STMicroelectronics STGIPL35K120L1.pdf Description: POWER DRIVER IGBT 1200V SDIP-18L
Packaging: Tube
Package / Case: 18-PowerDIP Module (1.087", 27.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 1 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 35 A
Voltage: 1.2 kV
Produkt ist nicht verfügbar
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STD10P6F6 STD10P6F6 STMicroelectronics en.DM00051198.pdf Description: MOSFET P CH 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
auf Bestellung 2500 Stücke:
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2500+0.60 EUR
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STP10P6F6 STP10P6F6 STMicroelectronics en.DM00051198.pdf Description: MOSFET P-CH 60V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
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STP46NF30 STP46NF30 STMicroelectronics en.DM00022942.pdf Description: MOSFET N CH 300V 42A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
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STD9NM40N STD9NM40N STMicroelectronics en.DM00067012.pdf Description: MOSFET N-CH 400V 5.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V
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STL60N32N3LL STL60N32N3LL STMicroelectronics STL60N32N3LL.pdf Description: MOSFET 2N-CH 30V 32A/60A PWRFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 23W, 50W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: PowerFlat™ (5x6)
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STTH8T06DI STTH8T06DI STMicroelectronics en.DM00059176.pdf Description: DIODE GP 600V 8A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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STU65N3LLH5 STU65N3LLH5 STMicroelectronics en.CD00268670.pdf Description: MOSFET N CH 30V 65A IPAK
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STW15N80K5 STW15N80K5 STMicroelectronics en.DM00060560.pdf Description: MOSFET N-CH 800V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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ECMF02-4CMX8 ECMF02-4CMX8 STMicroelectronics en.DM00039389.pdf Description: CMC 2LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.047" W (2.50mm x 1.20mm)
Mounting Type: Surface Mount
Number of Lines: 2
Operating Temperature: -40°C ~ 125°C
Height (Max): 0.022" (0.55mm)
DC Resistance (DCR) (Max): 4Ohm
Part Status: Active
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ESDA25SC6Y ESDA25SC6Y STMicroelectronics en.DM00231412.pdf Description: TVS DIODE 24VWM 51VC SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 25V
Voltage - Clamping (Max) @ Ipp: 51V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ESDA5V3SC6Y ESDA5V3SC6Y STMicroelectronics en.DM00231412.pdf Description: TVS DIODE 3VWM 21VC SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 22A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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STB15N80K5 STB15N80K5 STMicroelectronics en.DM00060560.pdf Description: MOSFET N CH 800V 14A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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STTH2003CGY-TR STTH2003CGY-TR STMicroelectronics en.DM00040839.pdf Description: DIODE ARRAY GP 300V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
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STTH602CBY-TR STTH602CBY-TR STMicroelectronics en.DM00056393.pdf Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Qualification: AEC-Q101
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STD10P6F6 STD10P6F6 STMicroelectronics en.DM00051198.pdf Description: MOSFET P CH 60V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
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STD65N3LLH5 STD65N3LLH5 STMicroelectronics en.CD00268670.pdf Description: MOSFET N CH 30V 65A DPAK
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STD9NM40N STD9NM40N STMicroelectronics en.DM00067012.pdf Description: MOSFET N-CH 400V 5.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V
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STTH810GY-TR STTH810GY-TR STMicroelectronics en.DM00031453.pdf Description: DIODE STANDARD 1000V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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STL10DN15F3 STMicroelectronics DM00067592.pdf Description: MOSFET 2N-CH 150V 10A POWERFLAT
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STL10DN15F3 STMicroelectronics DM00067592.pdf Description: MOSFET 2N-CH 150V 10A POWERFLAT
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STN9360 STN9360 STMicroelectronics en.DM00055595.pdf Description: TRANS PNP 600V 0.5A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1.6 W
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STTH1003SBY-TR STTH1003SBY-TR STMicroelectronics en.DM00042790.pdf Description: DIODE STANDARD 300V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
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STPS20L60CGY-TR STPS20L60CGY-TR STMicroelectronics STPS20L60C-Y.pdf Description: DIODE ARRAY SCHOTT 60V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Qualification: AEC-Q101
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STF15N80K5 STF15N80K5 STMicroelectronics en.DM00060560.pdf Description: MOSFET N-CH 800V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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STI34N65M5 STI34N65M5 STMicroelectronics en.DM00049181.pdf Description: MOSFET N-CH 650V 28A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
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STB15N80K5 STB15N80K5 STMicroelectronics en.DM00060560.pdf Description: MOSFET N CH 800V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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STP15N80K5 STP15N80K5 STMicroelectronics en.DM00060560.pdf Description: MOSFET N-CH 800V 14A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 444 Stücke:
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STL10DN15F3 STMicroelectronics DM00067592.pdf Description: MOSFET 2N-CH 150V 10A POWERFLAT
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STPSC4H065D STPSC4H065D STMicroelectronics en.DM00063407.pdf Description: DIODE SCHOTTKY 650V 4A TO220AC
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STPS340SY STPS340SY STMicroelectronics en.CD00270569.pdf Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 8025 Stücke:
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16+1.11 EUR
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STPS340UY STPS340UY STMicroelectronics en.CD00270569.pdf Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 1961 Stücke:
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25+0.72 EUR
41+0.43 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.24 EUR
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STPSC10H065B-TR STPSC10H065B-TR STMicroelectronics en.DM00063471.pdf Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 10000 Stücke:
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2500+2.61 EUR
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STPSC10H065G-TR STPSC10H065G-TR STMicroelectronics en.DM00063471.pdf Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
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ESDA6V1SC6Y en.DM00231412.pdf
ESDA6V1SC6Y
Hersteller: STMicroelectronics
Description: TVS DIODE 5.2VWM 19VC SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 18A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.2V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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Anzahl Preis
3000+0.19 EUR
Mindestbestellmenge: 3000
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ESDA14V2SC5Y en.DM00231412.pdf
ESDA14V2SC5Y
Hersteller: STMicroelectronics
Description: TVS DIODE 12VWM 35VC SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 14A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOT-23-5
Unidirectional Channels: 4
Voltage - Breakdown (Min): 14.2V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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Anzahl Preis
3000+0.17 EUR
6000+0.16 EUR
Mindestbestellmenge: 3000
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ESDALC6-4N4 general-purpose-esd-protection.html
ESDALC6-4N4
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 10VC 4UQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 9.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 4-uQFN (1x0.8)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 27W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESDAVLC8-4BN4 protections-and-emi-filters.html
ESDAVLC8-4BN4
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 28VC 4UQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 4.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 4-uQFN (1x0.8)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 45W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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ESDAXLC6-1BT2 en.DM00065056.pdf
ESDAXLC6-1BT2
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 17VC SOD882T
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 200MHz ~ 3GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOD-882T
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
auf Bestellung 51689 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
70+0.25 EUR
110+0.16 EUR
500+0.15 EUR
2000+0.12 EUR
5000+0.10 EUR
Mindestbestellmenge: 35
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ESDAXLC6-1BU2 en.DM00065800.pdf
ESDAXLC6-1BU2
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 17VC 0201
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 200MHz ~ 3GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
auf Bestellung 69637 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
264+0.07 EUR
362+0.05 EUR
500+0.05 EUR
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ESDAXLC6-1BT2 en.DM00065056.pdf
ESDAXLC6-1BT2
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 17VC SOD882T
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 200MHz ~ 3GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOD-882T
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12000+0.09 EUR
24000+0.07 EUR
36000+0.07 EUR
Mindestbestellmenge: 12000
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ESDAXLC6-1BU2 en.DM00065800.pdf
ESDAXLC6-1BU2
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 17VC 0201
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 200MHz ~ 3GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15000+0.05 EUR
Mindestbestellmenge: 15000
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PD85004
PD85004
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS 13.6V SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Current Rating (Amps): 2A
Mounting Type: Surface Mount
Frequency: 870MHz
Power - Output: 4W
Gain: 17dB
Technology: LDMOS
Supplier Device Package: SOT-89-3
Part Status: Obsolete
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 50 mA
Produkt ist nicht verfügbar
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L6470PD en.CD00255075.pdf
L6470PD
Hersteller: STMicroelectronics
Description: IC MOTOR DRIVER BIPLR 36POWERSSO
Packaging: Tube
Package / Case: 36-PowerBSSOP (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3.3V, 5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8V ~ 45V
Supplier Device Package: PowerSO-36 Slug Up
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/128
Part Status: Active
auf Bestellung 1282 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.54 EUR
10+11.29 EUR
31+10.32 EUR
124+9.48 EUR
279+9.12 EUR
527+8.89 EUR
1023+8.69 EUR
Mindestbestellmenge: 2
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L6480H en.DM00056884.pdf
L6480H
Hersteller: STMicroelectronics
Description: IC MTR DRV BIPLR 3.3/5V 38HTSSOP
Packaging: Tube
Package / Case: 38-TFSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 3.3V, 5V
Applications: General Purpose
Technology: DMOS
Supplier Device Package: 38-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/128
Part Status: Active
auf Bestellung 264 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.35 EUR
10+7.94 EUR
50+6.97 EUR
100+6.67 EUR
250+6.36 EUR
Mindestbestellmenge: 2
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LCP02-150B1RL LCP02-150B1.pdf
LCP02-150B1RL
Hersteller: STMicroelectronics
Description: THYRISTOR 30A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Supplier Device Package: 8-SO
Part Status: Active
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 30 A
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.22 EUR
10+2.73 EUR
Mindestbestellmenge: 5
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STTH2003CGY-TR en.DM00040839.pdf
STTH2003CGY-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 300V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
Produkt ist nicht verfügbar
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STTH602CBY-TR en.DM00056393.pdf
STTH602CBY-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ECMF02-4CMX8 en.DM00039389.pdf
ECMF02-4CMX8
Hersteller: STMicroelectronics
Description: CMC 2LN SMD ESD
Packaging: Tape & Reel (TR)
Features: TVS Diode ESD Protection
Package / Case: 8-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.047" W (2.50mm x 1.20mm)
Mounting Type: Surface Mount
Number of Lines: 2
Operating Temperature: -40°C ~ 125°C
Height (Max): 0.022" (0.55mm)
DC Resistance (DCR) (Max): 4Ohm
Part Status: Active
auf Bestellung 138000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.42 EUR
6000+0.39 EUR
9000+0.38 EUR
15000+0.36 EUR
Mindestbestellmenge: 3000
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STTH810GY-TR en.DM00031453.pdf
STTH810GY-TR
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1000V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ESDA25SC6Y en.DM00231412.pdf
ESDA25SC6Y
Hersteller: STMicroelectronics
Description: TVS DIODE 24VWM 51VC SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 25V
Voltage - Clamping (Max) @ Ipp: 51V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.20 EUR
Mindestbestellmenge: 3000
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ESDA5V3SC6Y en.DM00231412.pdf
ESDA5V3SC6Y
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 21VC SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 22A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.20 EUR
Mindestbestellmenge: 3000
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STD65N3LLH5 en.CD00268670.pdf
STD65N3LLH5
Hersteller: STMicroelectronics
Description: MOSFET N CH 30V 65A DPAK
Produkt ist nicht verfügbar
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STTH1210DY en.DM00031451.pdf
STTH1210DY
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1000V 12A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.50 EUR
50+1.69 EUR
Mindestbestellmenge: 6
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STN9360 en.DM00055595.pdf
STN9360
Hersteller: STMicroelectronics
Description: TRANS PNP 600V 0.5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1.6 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.51 EUR
2000+0.47 EUR
Mindestbestellmenge: 1000
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STPS20L60CGY-TR STPS20L60C-Y.pdf
STPS20L60CGY-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTT 60V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STPS340SY en.CD00270569.pdf
STPS340SY
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.26 EUR
5000+0.24 EUR
7500+0.23 EUR
Mindestbestellmenge: 2500
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T830-8FP DM00058404.pdf
T830-8FP
Hersteller: STMicroelectronics
Description: TRIAC ALTERNISTOR 800V TO220FPAB
auf Bestellung 881 Stücke:
Lieferzeit 10-14 Tag (e)
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STPS340UY en.CD00270569.pdf
STPS340UY
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STTH1003SBY-TR en.DM00042790.pdf
STTH1003SBY-TR
Hersteller: STMicroelectronics
Description: DIODE STANDARD 300V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.46 EUR
Mindestbestellmenge: 2500
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STGIPL35K120L1 STGIPL35K120L1.pdf
STGIPL35K120L1
Hersteller: STMicroelectronics
Description: POWER DRIVER IGBT 1200V SDIP-18L
Packaging: Tube
Package / Case: 18-PowerDIP Module (1.087", 27.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 1 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 35 A
Voltage: 1.2 kV
Produkt ist nicht verfügbar
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STD10P6F6 en.DM00051198.pdf
STD10P6F6
Hersteller: STMicroelectronics
Description: MOSFET P CH 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.60 EUR
Mindestbestellmenge: 2500
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STP10P6F6 en.DM00051198.pdf
STP10P6F6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 60V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
Produkt ist nicht verfügbar
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STP46NF30 en.DM00022942.pdf
STP46NF30
Hersteller: STMicroelectronics
Description: MOSFET N CH 300V 42A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 1187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.99 EUR
50+3.57 EUR
100+3.24 EUR
500+2.66 EUR
1000+2.47 EUR
Mindestbestellmenge: 3
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STD9NM40N en.DM00067012.pdf
STD9NM40N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 400V 5.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V
Produkt ist nicht verfügbar
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STL60N32N3LL STL60N32N3LL.pdf
STL60N32N3LL
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 30V 32A/60A PWRFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 23W, 50W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: PowerFlat™ (5x6)
Produkt ist nicht verfügbar
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STTH8T06DI en.DM00059176.pdf
STTH8T06DI
Hersteller: STMicroelectronics
Description: DIODE GP 600V 8A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 870 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.01 EUR
50+2.42 EUR
100+1.99 EUR
500+1.68 EUR
Mindestbestellmenge: 6
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STU65N3LLH5 en.CD00268670.pdf
STU65N3LLH5
Hersteller: STMicroelectronics
Description: MOSFET N CH 30V 65A IPAK
auf Bestellung 1435 Stücke:
Lieferzeit 10-14 Tag (e)
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STW15N80K5 en.DM00060560.pdf
STW15N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 590 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.64 EUR
30+4.71 EUR
120+3.97 EUR
510+3.40 EUR
Mindestbestellmenge: 3
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ECMF02-4CMX8 en.DM00039389.pdf
ECMF02-4CMX8
Hersteller: STMicroelectronics
Description: CMC 2LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.047" W (2.50mm x 1.20mm)
Mounting Type: Surface Mount
Number of Lines: 2
Operating Temperature: -40°C ~ 125°C
Height (Max): 0.022" (0.55mm)
DC Resistance (DCR) (Max): 4Ohm
Part Status: Active
auf Bestellung 138461 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
26+0.68 EUR
29+0.63 EUR
50+0.59 EUR
100+0.56 EUR
250+0.51 EUR
500+0.49 EUR
1000+0.46 EUR
Mindestbestellmenge: 22
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ESDA25SC6Y en.DM00231412.pdf
ESDA25SC6Y
Hersteller: STMicroelectronics
Description: TVS DIODE 24VWM 51VC SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 25V
Voltage - Clamping (Max) @ Ipp: 51V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10957 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
39+0.46 EUR
100+0.36 EUR
500+0.30 EUR
1000+0.26 EUR
Mindestbestellmenge: 27
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ESDA5V3SC6Y en.DM00231412.pdf
ESDA5V3SC6Y
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 21VC SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 22A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11123 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
49+0.36 EUR
100+0.28 EUR
500+0.23 EUR
1000+0.20 EUR
Mindestbestellmenge: 36
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STB15N80K5 en.DM00060560.pdf
STB15N80K5
Hersteller: STMicroelectronics
Description: MOSFET N CH 800V 14A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.84 EUR
10+6.11 EUR
100+4.57 EUR
Mindestbestellmenge: 2
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STTH2003CGY-TR en.DM00040839.pdf
STTH2003CGY-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 300V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
auf Bestellung 835 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.28 EUR
10+2.86 EUR
100+2.13 EUR
500+1.79 EUR
Mindestbestellmenge: 5
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STTH602CBY-TR en.DM00056393.pdf
STTH602CBY-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STD10P6F6 en.DM00051198.pdf
STD10P6F6
Hersteller: STMicroelectronics
Description: MOSFET P CH 60V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
auf Bestellung 3131 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
15+1.22 EUR
100+0.92 EUR
500+0.73 EUR
1000+0.64 EUR
Mindestbestellmenge: 10
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STD65N3LLH5 en.CD00268670.pdf
STD65N3LLH5
Hersteller: STMicroelectronics
Description: MOSFET N CH 30V 65A DPAK
Produkt ist nicht verfügbar
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STD9NM40N en.DM00067012.pdf
STD9NM40N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 400V 5.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V
Produkt ist nicht verfügbar
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STTH810GY-TR en.DM00031453.pdf
STTH810GY-TR
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1000V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STL10DN15F3 DM00067592.pdf
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 150V 10A POWERFLAT
Produkt ist nicht verfügbar
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STL10DN15F3 DM00067592.pdf
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 150V 10A POWERFLAT
Produkt ist nicht verfügbar
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STN9360 en.DM00055595.pdf
STN9360
Hersteller: STMicroelectronics
Description: TRANS PNP 600V 0.5A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1.6 W
auf Bestellung 2478 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.80 EUR
16+1.12 EUR
100+0.73 EUR
500+0.56 EUR
Mindestbestellmenge: 10
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STTH1003SBY-TR en.DM00042790.pdf
STTH1003SBY-TR
Hersteller: STMicroelectronics
Description: DIODE STANDARD 300V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
auf Bestellung 5031 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
17+1.08 EUR
100+0.85 EUR
500+0.66 EUR
1000+0.60 EUR
Mindestbestellmenge: 12
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STPS20L60CGY-TR STPS20L60C-Y.pdf
STPS20L60CGY-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTT 60V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 941 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
10+1.93 EUR
100+1.46 EUR
500+1.20 EUR
Mindestbestellmenge: 7
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STF15N80K5 en.DM00060560.pdf
STF15N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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STI34N65M5 en.DM00049181.pdf
STI34N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 28A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Produkt ist nicht verfügbar
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STB15N80K5 en.DM00060560.pdf
STB15N80K5
Hersteller: STMicroelectronics
Description: MOSFET N CH 800V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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STP15N80K5 en.DM00060560.pdf
STP15N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 14A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 444 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.27 EUR
50+4.37 EUR
100+4.09 EUR
Mindestbestellmenge: 3
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STL10DN15F3 DM00067592.pdf
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 150V 10A POWERFLAT
Produkt ist nicht verfügbar
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STPSC4H065D en.DM00063407.pdf
STPSC4H065D
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 650V 4A TO220AC
auf Bestellung 1178 Stücke:
Lieferzeit 10-14 Tag (e)
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STPS340SY en.CD00270569.pdf
STPS340SY
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 8025 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
26+0.69 EUR
100+0.44 EUR
500+0.34 EUR
1000+0.30 EUR
Mindestbestellmenge: 16
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STPS340UY en.CD00270569.pdf
STPS340UY
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 1961 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
41+0.43 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.24 EUR
Mindestbestellmenge: 25
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STPSC10H065B-TR en.DM00063471.pdf
STPSC10H065B-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.61 EUR
Mindestbestellmenge: 2500
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STPSC10H065G-TR en.DM00063471.pdf
STPSC10H065G-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
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