Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (161888) > Seite 339 nach 2699
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STM32F051K4T6 | STMicroelectronics |
Description: IC MCU 32BIT 16KB FLASH 32LQFPPackaging: Tray Package / Case: 32-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 16KB (16K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 13x12b; D/A 1x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: DMA, I2S, POR, PWM, WDT Supplier Device Package: 32-LQFP (7x7) Part Status: Active Number of I/O: 25 DigiKey Programmable: Not Verified |
auf Bestellung 1813 Stücke: Lieferzeit 10-14 Tag (e) |
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STM32F051K4U6TR | STMicroelectronics |
Description: IC MCU 32BIT 16KB FLASH 32UFQFPNPackaging: Tape & Reel (TR) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 16KB (16K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 13x12b; D/A 1x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: DMA, I2S, POR, PWM, WDT Supplier Device Package: 32-UFQFPN (5x5) Number of I/O: 27 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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STM32F051K6T6 | STMicroelectronics |
Description: IC MCU 32BIT 32KB FLASH 32LQFPPackaging: Tray Package / Case: 32-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 32KB (32K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 13x12b; D/A 1x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: DMA, I2S, POR, PWM, WDT Supplier Device Package: 32-LQFP (7x7) Part Status: Active Number of I/O: 25 DigiKey Programmable: Not Verified |
auf Bestellung 1332 Stücke: Lieferzeit 10-14 Tag (e) |
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STM32F051K8T6 | STMicroelectronics |
Description: IC MCU 32BIT 64KB FLASH 32LQFPPackaging: Tray Package / Case: 32-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 13x12b; D/A 1x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: DMA, I2S, POR, PWM, WDT Supplier Device Package: 32-LQFP (7x7) Part Status: Active Number of I/O: 25 DigiKey Programmable: Not Verified |
auf Bestellung 7590 Stücke: Lieferzeit 10-14 Tag (e) |
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STM32F051R4T6TR | STMicroelectronics |
Description: IC MCU 32BIT 16KB FLASH 64LQFPPackaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 16KB (16K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 19x12b; D/A 1x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: DMA, I2S, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Part Status: Active Number of I/O: 55 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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STM32F051R8T6TR | STMicroelectronics |
Description: IC MCU 32BIT 64KB FLASH 64LQFPPackaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 19x12b; D/A 1x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: DMA, I2S, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Part Status: Active Number of I/O: 55 DigiKey Programmable: Not Verified |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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STM32F358VCT6 | STMicroelectronics |
Description: IC MCU 32BIT 256KB FLASH 100LQFPPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 72MHz Program Memory Size: 256KB (256K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 4x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.65V ~ 1.95V, 1.65V ~ 3.6V Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: DMA, I2S, POR, PWM, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 86 DigiKey Programmable: Not Verified |
auf Bestellung 530 Stücke: Lieferzeit 10-14 Tag (e) |
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STEVAL-MKI138V1 | STMicroelectronics |
Description: EVAL BD FOR MP34DT01 STM32F107RCPackaging: Bulk Function: MEMS Omnidirectional Microphones Type: Audio Utilized IC / Part: MP34DT01, STM32F107RC Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Part Status: Obsolete Contents: Board(s) Secondary Attributes: Digital Output |
Produkt ist nicht verfügbar |
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STEVAL-CCA042V1 | STMicroelectronics |
Description: EVAL BOARD FOR TDA7491HVPackaging: Bulk Output Type: 2-Channel (Stereo) Amplifier Type: Class D Voltage - Supply: 5V ~ 18V Max Output Power x Channels @ Load: 20W x 2 @ 8Ohm Board Type: Fully Populated Utilized IC / Part: TDA7491HV Supplied Contents: Board(s) Part Status: Active Contents: Board(s) |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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STEVAL-CCA043V1 | STMicroelectronics |
Description: BOARD EVAL FOR TDA7491MVPackaging: Bulk Output Type: 1-Channel (Mono) Amplifier Type: Class D Voltage - Supply: 5V ~ 18V Max Output Power x Channels @ Load: 25W x 1 @ 6Ohm Board Type: Fully Populated Utilized IC / Part: TDA7491MV Supplied Contents: Board(s) |
Produkt ist nicht verfügbar |
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STEVAL-CCA044V1 | STMicroelectronics |
Description: EVAL BOARD FOR TDA7498EPackaging: Bulk Output Type: 1-Channel (Mono) or 2-Channel (Stereo) Amplifier Type: Class D Voltage - Supply: 14V ~ 36V Max Output Power x Channels @ Load: 220W x 1 @ 4Ohm; 160W x 2 @ 4Ohm Board Type: Fully Populated Utilized IC / Part: TDA7498E Supplied Contents: Board(s) Part Status: Active Contents: Board(s) |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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| STEVAL-CCA040V1 | STMicroelectronics |
Description: EVAL BOARD FOR STA540SANPackaging: Bulk Output Type: 2-Channel (Stereo) or 4-Channel (Quad) Amplifier Type: Class AB Voltage - Supply: 8V ~ 22V Max Output Power x Channels @ Load: 26W x 2 @ 4Ohm; 10W x 4 @ 4Ohm Board Type: Fully Populated Utilized IC / Part: STA540SAN Supplied Contents: Board(s) Part Status: Obsolete Contents: Board(s) |
Produkt ist nicht verfügbar |
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BAL-NRF01D3 | STMicroelectronics |
Description: BALUN 2.4GHZ-2.54GHZ 5WFBGAPackaging: Tape & Reel (TR) Package / Case: 5-WFBGA, FCBGA Mounting Type: Surface Mount Frequency Range: 2.4GHz ~ 2.54GHz Impedance - Unbalanced/Balanced: 50 / -Ohm Insertion Loss (Max): 2.25dB Return Loss (Min): 10dB Phase Difference: 3° Part Status: Active |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAL-NRF01D3 | STMicroelectronics |
Description: BALUN 2.4GHZ-2.54GHZ 5WFBGAPackaging: Cut Tape (CT) Package / Case: 5-WFBGA, FCBGA Mounting Type: Surface Mount Frequency Range: 2.4GHz ~ 2.54GHz Impedance - Unbalanced/Balanced: 50 / -Ohm Insertion Loss (Max): 2.25dB Return Loss (Min): 10dB Phase Difference: 3° Part Status: Active |
auf Bestellung 20071 Stücke: Lieferzeit 10-14 Tag (e) |
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STY145N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 138A MAX247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 138A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 69A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: MAX247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 414 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 100 V |
auf Bestellung 38 Stücke: Lieferzeit 10-14 Tag (e) |
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STU7N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 6A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V |
Produkt ist nicht verfügbar |
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STL100N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 80A POWERFLATPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 19A, 10V Power Dissipation (Max): 5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 50 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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STU8N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 6A TO251Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
Produkt ist nicht verfügbar |
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STB25N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 19.5A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V |
Produkt ist nicht verfügbar |
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STF25N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 19.5A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V |
auf Bestellung 215 Stücke: Lieferzeit 10-14 Tag (e) |
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STD15N65M5 | STMicroelectronics |
Description: MOSFET N CH 650V 11A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
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STP25N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 19.5A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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STD7N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 6A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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STD8N80K5 | STMicroelectronics |
Description: MOSFET N CH 800V 6A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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STB20N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 18A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 100 V |
Produkt ist nicht verfügbar |
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STL100N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 80A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 19A, 10V Power Dissipation (Max): 5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 50 V |
auf Bestellung 13788 Stücke: Lieferzeit 10-14 Tag (e) |
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STB25N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 19.5A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V |
auf Bestellung 237 Stücke: Lieferzeit 10-14 Tag (e) |
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STD15N65M5 | STMicroelectronics |
Description: MOSFET N CH 650V 11A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
auf Bestellung 1239 Stücke: Lieferzeit 10-14 Tag (e) |
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STD7N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 6A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V |
auf Bestellung 10971 Stücke: Lieferzeit 10-14 Tag (e) |
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STD8N80K5 | STMicroelectronics |
Description: MOSFET N CH 800V 6A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
auf Bestellung 3750 Stücke: Lieferzeit 10-14 Tag (e) |
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STGIPS30C60 | STMicroelectronics |
Description: IGBT IPM MODULE 30A 600V SDIP-25 Packaging: Tray Package / Case: 25-PowerDIP Module (0.993", 25.23mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500VDC Current: 30 A Voltage: 600 V |
Produkt ist nicht verfügbar |
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STP270N8F7 | STMicroelectronics |
Description: MOSFET N CH 80V 180A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V Power Dissipation (Max): 315W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V |
auf Bestellung 1006 Stücke: Lieferzeit 10-14 Tag (e) |
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STB20N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 18A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 100 V |
Produkt ist nicht verfügbar |
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STL8N10LF3 | STMicroelectronics |
Description: MOSFET N CH 100V 20A PWRFLT5X6Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V Power Dissipation (Max): 4.3W (Ta), 70W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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STW25N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 19.5A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V |
auf Bestellung 263 Stücke: Lieferzeit 10-14 Tag (e) |
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STL8N10LF3 | STMicroelectronics |
Description: MOSFET N CH 100V 20A PWRFLT5X6Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V Power Dissipation (Max): 4.3W (Ta), 70W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 4405 Stücke: Lieferzeit 10-14 Tag (e) |
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STI300N4F6 | STMicroelectronics |
Description: MOSFET N CH 40V 160A I2PAK |
Produkt ist nicht verfügbar |
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STU80N4F6 | STMicroelectronics |
Description: MOSFET N-CH 40V 80A TO251Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 40A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V |
Produkt ist nicht verfügbar |
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STL11N4LLF5 | STMicroelectronics |
Description: MOSFET N-CH 40V 11A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 5.5A, 10V Power Dissipation (Max): 2.9W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (3.3x3.3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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STL11N4LLF5 | STMicroelectronics |
Description: MOSFET N-CH 40V 11A POWERFLATPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 5.5A, 10V Power Dissipation (Max): 2.9W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (3.3x3.3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V |
Produkt ist nicht verfügbar |
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STL6N3LLH6 | STMicroelectronics |
Description: MOSFET N-CH 30V POWERFLATPackaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Power Dissipation (Max): 2.4W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: PowerFlat™ (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V |
auf Bestellung 1449 Stücke: Lieferzeit 10-14 Tag (e) |
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STF8N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 6A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
auf Bestellung 644 Stücke: Lieferzeit 10-14 Tag (e) |
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STP8N80K5 | STMicroelectronics |
Description: MOSFET N CH 800V 6A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
auf Bestellung 940 Stücke: Lieferzeit 10-14 Tag (e) |
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STL6N3LLH6 | STMicroelectronics |
Description: MOSFET N-CH 30V POWERFLATPackaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Power Dissipation (Max): 2.4W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: PowerFlat™ (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V |
Produkt ist nicht verfügbar |
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STM32L152C-DISCO | STMicroelectronics |
Description: DISCOVERY STM32L152 EVAL BRDPackaging: Bulk Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), LCD Core Processor: ARM® Cortex®-M3 Board Type: Evaluation Platform Utilized IC / Part: STM32L152 Platform: Discovery Part Status: Active |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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HCF4010YM013TR | STMicroelectronics |
Description: IC BUFFER NON-INVERT 20V 16-SOPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 6 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 20V Number of Bits per Element: 1 Current - Output High, Low: 3mA, 36mA Supplier Device Package: 16-SO Channel Type: Unidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 3 V ~ 20 V Voltage - VCCB: 3 V ~ 20 V Part Status: Active Number of Circuits: 6 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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HCF4010YM013TR | STMicroelectronics |
Description: IC BUFFER NON-INVERT 20V 16-SOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 6 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 20V Number of Bits per Element: 1 Current - Output High, Low: 3mA, 36mA Supplier Device Package: 16-SO Channel Type: Unidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 3 V ~ 20 V Voltage - VCCB: 3 V ~ 20 V Part Status: Active Number of Circuits: 6 |
auf Bestellung 6718 Stücke: Lieferzeit 10-14 Tag (e) |
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STEVAL-IKR001V7D | STMicroelectronics |
Description: BOARD EVAL SPIRIT1 |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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STEVAL-MKI132V1 | STMicroelectronics |
Description: BOARD EVAL BLUEMOTION FOR MEMS |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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STEVAL-MKI134V1 | STMicroelectronics |
Description: DIL24 ADAPTER BOARD LIS3DSHPackaging: Bulk Sensitivity: 0.06mg/digit, 0.12mg/digit, 0.18mg/digit, 0.24mg/digit, 0.73mg/digit Function: Accelerometer Interface: I2C, Serial, SPI Type: Sensor Contents: Board(s) Voltage - Supply: 1.71V ~ 3.6V Sensor Type: Accelerometer, 3 Axis Utilized IC / Part: LIS3DSH Supplied Contents: Board(s) Embedded: No Sensing Range: ±2g, 4g, 6g, 8g, 16g Platform: Professional MEMS Tool Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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STEVAL-ISV003V2 | STMicroelectronics |
Description: EVAL BOARD FOR STM32F103ZEPackaging: Bulk Voltage - Output: 240VAC Voltage - Input: 18V ~ 55V Current - Output: 1.06A Contents: Board(s) Board Type: Fully Populated Utilized IC / Part: STM32F103ZE Supplied Contents: Board(s) Main Purpose: DC/AC Converter Outputs and Type: 1 Isolated Output Part Status: Obsolete Power - Output: 250 W |
Produkt ist nicht verfügbar |
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STW57N65M5-4 | STMicroelectronics |
Description: MOSFET N-CH 650V 42A TO247-4LPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V |
Produkt ist nicht verfügbar |
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LMV822IYST | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8MINISOPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 300µA (x2 Channels) Slew Rate: 1.9V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 60 nA Voltage - Input Offset: 3.5 mV Supplier Device Package: 8-MiniSO Number of Circuits: 2 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1940 Stücke: Lieferzeit 10-14 Tag (e) |
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TSV854AIYPT | STMicroelectronics |
Description: IC OPAMP GP 4 CIRCUIT 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 130µA (x4 Channels) Slew Rate: 0.7V/µs Gain Bandwidth Product: 1.3 MHz Current - Input Bias: 27 nA Voltage - Input Offset: 800 µV Supplier Device Package: 14-TSSOP Number of Circuits: 4 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.3 V Voltage - Supply Span (Max): 5.5 V |
Produkt ist nicht verfügbar |
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TSV711ICT | STMicroelectronics |
Description: IC OPAMP GP 1 CIRCUIT SC70-5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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TSV852AIYDT | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 130µA (x2 Channels) Slew Rate: 0.7V/µs Gain Bandwidth Product: 1.3 MHz Current - Input Bias: 27 nA Voltage - Input Offset: 800 µV Supplier Device Package: 8-SOIC Part Status: Active Number of Circuits: 2 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.3 V Voltage - Supply Span (Max): 5.5 V Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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TSV854IYPT | STMicroelectronics |
Description: IC OPAMP GP 4 CIRCUIT 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 130µA (x4 Channels) Slew Rate: 0.7V/µs Gain Bandwidth Product: 1.3 MHz Current - Input Bias: 27 nA Voltage - Input Offset: 4 mV Supplier Device Package: 14-TSSOP Number of Circuits: 4 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.3 V Voltage - Supply Span (Max): 5.5 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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TSV854IYPT | STMicroelectronics |
Description: IC OPAMP GP 4 CIRCUIT 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 130µA (x4 Channels) Slew Rate: 0.7V/µs Gain Bandwidth Product: 1.3 MHz Current - Input Bias: 27 nA Voltage - Input Offset: 4 mV Supplier Device Package: 14-TSSOP Number of Circuits: 4 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.3 V Voltage - Supply Span (Max): 5.5 V |
auf Bestellung 2331 Stücke: Lieferzeit 10-14 Tag (e) |
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LMV824IYPT | STMicroelectronics |
Description: IC OPAMP GP 4 CIRCUIT 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 300µA (x4 Channels) Slew Rate: 1.9V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 60 nA Voltage - Input Offset: 3.5 mV Supplier Device Package: 14-TSSOP Part Status: Active Number of Circuits: 4 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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LMV822AIYDT | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 300µA (x2 Channels) Slew Rate: 1.9V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 60 nA Voltage - Input Offset: 800 µV Supplier Device Package: 8-SOIC Number of Circuits: 2 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STM32F051K4T6 |
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Hersteller: STMicroelectronics
Description: IC MCU 32BIT 16KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
auf Bestellung 1813 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5 EUR |
| 10+ | 3.76 EUR |
| 25+ | 3.45 EUR |
| 100+ | 3.1 EUR |
| 250+ | 2.94 EUR |
| 500+ | 2.84 EUR |
| 1000+ | 2.76 EUR |
| STM32F051K4U6TR |
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Hersteller: STMicroelectronics
Description: IC MCU 32BIT 16KB FLASH 32UFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 32-UFQFPN (5x5)
Number of I/O: 27
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 32UFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 32-UFQFPN (5x5)
Number of I/O: 27
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STM32F051K6T6 |
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Hersteller: STMicroelectronics
Description: IC MCU 32BIT 32KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
auf Bestellung 1332 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.19 EUR |
| 10+ | 3.9 EUR |
| 25+ | 3.58 EUR |
| 100+ | 3.23 EUR |
| 250+ | 3.06 EUR |
| 500+ | 2.96 EUR |
| 1000+ | 2.87 EUR |
| STM32F051K8T6 |
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Hersteller: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
auf Bestellung 7590 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.56 EUR |
| 10+ | 4.19 EUR |
| 25+ | 3.85 EUR |
| 100+ | 3.47 EUR |
| 250+ | 3.29 EUR |
| 500+ | 3.19 EUR |
| 1000+ | 3.1 EUR |
| 2500+ | 3 EUR |
| 5000+ | 2.95 EUR |
| STM32F051R4T6TR |
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Hersteller: STMicroelectronics
Description: IC MCU 32BIT 16KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 19x12b; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 19x12b; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STM32F051R8T6TR |
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Hersteller: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 19x12b; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 19x12b; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 3.51 EUR |
| 2000+ | 3.43 EUR |
| STM32F358VCT6 |
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Hersteller: STMicroelectronics
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 4x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 1.95V, 1.65V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 86
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 4x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 1.95V, 1.65V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 86
DigiKey Programmable: Not Verified
auf Bestellung 530 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.85 EUR |
| 10+ | 10.74 EUR |
| 25+ | 9.96 EUR |
| 90+ | 9.16 EUR |
| 270+ | 8.66 EUR |
| 450+ | 8.48 EUR |
| STEVAL-MKI138V1 |
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Hersteller: STMicroelectronics
Description: EVAL BD FOR MP34DT01 STM32F107RC
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: MP34DT01, STM32F107RC
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Part Status: Obsolete
Contents: Board(s)
Secondary Attributes: Digital Output
Description: EVAL BD FOR MP34DT01 STM32F107RC
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: MP34DT01, STM32F107RC
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Part Status: Obsolete
Contents: Board(s)
Secondary Attributes: Digital Output
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STEVAL-CCA042V1 |
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Hersteller: STMicroelectronics
Description: EVAL BOARD FOR TDA7491HV
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 5V ~ 18V
Max Output Power x Channels @ Load: 20W x 2 @ 8Ohm
Board Type: Fully Populated
Utilized IC / Part: TDA7491HV
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR TDA7491HV
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 5V ~ 18V
Max Output Power x Channels @ Load: 20W x 2 @ 8Ohm
Board Type: Fully Populated
Utilized IC / Part: TDA7491HV
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 96.85 EUR |
| STEVAL-CCA043V1 |
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Hersteller: STMicroelectronics
Description: BOARD EVAL FOR TDA7491MV
Packaging: Bulk
Output Type: 1-Channel (Mono)
Amplifier Type: Class D
Voltage - Supply: 5V ~ 18V
Max Output Power x Channels @ Load: 25W x 1 @ 6Ohm
Board Type: Fully Populated
Utilized IC / Part: TDA7491MV
Supplied Contents: Board(s)
Description: BOARD EVAL FOR TDA7491MV
Packaging: Bulk
Output Type: 1-Channel (Mono)
Amplifier Type: Class D
Voltage - Supply: 5V ~ 18V
Max Output Power x Channels @ Load: 25W x 1 @ 6Ohm
Board Type: Fully Populated
Utilized IC / Part: TDA7491MV
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STEVAL-CCA044V1 |
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Hersteller: STMicroelectronics
Description: EVAL BOARD FOR TDA7498E
Packaging: Bulk
Output Type: 1-Channel (Mono) or 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 14V ~ 36V
Max Output Power x Channels @ Load: 220W x 1 @ 4Ohm; 160W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: TDA7498E
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR TDA7498E
Packaging: Bulk
Output Type: 1-Channel (Mono) or 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 14V ~ 36V
Max Output Power x Channels @ Load: 220W x 1 @ 4Ohm; 160W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: TDA7498E
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 117.53 EUR |
| STEVAL-CCA040V1 |
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Hersteller: STMicroelectronics
Description: EVAL BOARD FOR STA540SAN
Packaging: Bulk
Output Type: 2-Channel (Stereo) or 4-Channel (Quad)
Amplifier Type: Class AB
Voltage - Supply: 8V ~ 22V
Max Output Power x Channels @ Load: 26W x 2 @ 4Ohm; 10W x 4 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: STA540SAN
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
Description: EVAL BOARD FOR STA540SAN
Packaging: Bulk
Output Type: 2-Channel (Stereo) or 4-Channel (Quad)
Amplifier Type: Class AB
Voltage - Supply: 8V ~ 22V
Max Output Power x Channels @ Load: 26W x 2 @ 4Ohm; 10W x 4 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: STA540SAN
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAL-NRF01D3 |
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Hersteller: STMicroelectronics
Description: BALUN 2.4GHZ-2.54GHZ 5WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 5-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.54GHz
Impedance - Unbalanced/Balanced: 50 / -Ohm
Insertion Loss (Max): 2.25dB
Return Loss (Min): 10dB
Phase Difference: 3°
Part Status: Active
Description: BALUN 2.4GHZ-2.54GHZ 5WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 5-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.54GHz
Impedance - Unbalanced/Balanced: 50 / -Ohm
Insertion Loss (Max): 2.25dB
Return Loss (Min): 10dB
Phase Difference: 3°
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.35 EUR |
| 10000+ | 0.34 EUR |
| 15000+ | 0.33 EUR |
| BAL-NRF01D3 |
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Hersteller: STMicroelectronics
Description: BALUN 2.4GHZ-2.54GHZ 5WFBGA
Packaging: Cut Tape (CT)
Package / Case: 5-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.54GHz
Impedance - Unbalanced/Balanced: 50 / -Ohm
Insertion Loss (Max): 2.25dB
Return Loss (Min): 10dB
Phase Difference: 3°
Part Status: Active
Description: BALUN 2.4GHZ-2.54GHZ 5WFBGA
Packaging: Cut Tape (CT)
Package / Case: 5-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.54GHz
Impedance - Unbalanced/Balanced: 50 / -Ohm
Insertion Loss (Max): 2.25dB
Return Loss (Min): 10dB
Phase Difference: 3°
Part Status: Active
auf Bestellung 20071 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 0.51 EUR |
| 39+ | 0.46 EUR |
| 41+ | 0.44 EUR |
| 50+ | 0.43 EUR |
| 100+ | 0.41 EUR |
| 250+ | 0.4 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.37 EUR |
| STY145N65M5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 138A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 138A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 69A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: MAX247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 414 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 100 V
Description: MOSFET N-CH 650V 138A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 138A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 69A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: MAX247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 414 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 100 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 53.43 EUR |
| 30+ | 35.28 EUR |
| STU7N80K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
Description: MOSFET N-CH 800V 6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STL100N10F7 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 80A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 19A, 10V
Power Dissipation (Max): 5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 50 V
Description: MOSFET N-CH 100V 80A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 19A, 10V
Power Dissipation (Max): 5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 1.39 EUR |
| STU8N80K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 6A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N-CH 800V 6A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STB25N80K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 19.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Description: MOSFET N-CH 800V 19.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STF25N80K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 19.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Description: MOSFET N-CH 800V 19.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
auf Bestellung 215 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 8.87 EUR |
| 50+ | 4.9 EUR |
| 100+ | 4.68 EUR |
| STD15N65M5 |
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Hersteller: STMicroelectronics
Description: MOSFET N CH 650V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: MOSFET N CH 650V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP25N80K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 19.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Description: MOSFET N-CH 800V 19.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.58 EUR |
| 50+ | 3.79 EUR |
| STD7N80K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
Description: MOSFET N-CH 800V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.15 EUR |
| STD8N80K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N CH 800V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N CH 800V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.43 EUR |
| STB20N65M5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 100 V
Description: MOSFET N-CH 650V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STL100N10F7 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 80A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 19A, 10V
Power Dissipation (Max): 5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 50 V
Description: MOSFET N-CH 100V 80A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 19A, 10V
Power Dissipation (Max): 5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 50 V
auf Bestellung 13788 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.52 EUR |
| 10+ | 2.93 EUR |
| 100+ | 2.03 EUR |
| 500+ | 1.7 EUR |
| STB25N80K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 19.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Description: MOSFET N-CH 800V 19.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
auf Bestellung 237 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.61 EUR |
| 10+ | 6.08 EUR |
| 100+ | 4.39 EUR |
| STD15N65M5 |
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Hersteller: STMicroelectronics
Description: MOSFET N CH 650V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: MOSFET N CH 650V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 1239 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.42 EUR |
| 10+ | 2.86 EUR |
| 100+ | 1.98 EUR |
| 500+ | 1.65 EUR |
| STD7N80K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
Description: MOSFET N-CH 800V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
auf Bestellung 10971 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.94 EUR |
| 10+ | 2.54 EUR |
| 100+ | 1.75 EUR |
| 500+ | 1.41 EUR |
| STD8N80K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N CH 800V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N CH 800V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 3750 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.63 EUR |
| 10+ | 3.01 EUR |
| 100+ | 2.08 EUR |
| 500+ | 1.74 EUR |
| STGIPS30C60 |
Hersteller: STMicroelectronics
Description: IGBT IPM MODULE 30A 600V SDIP-25
Packaging: Tray
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500VDC
Current: 30 A
Voltage: 600 V
Description: IGBT IPM MODULE 30A 600V SDIP-25
Packaging: Tray
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500VDC
Current: 30 A
Voltage: 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP270N8F7 |
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Hersteller: STMicroelectronics
Description: MOSFET N CH 80V 180A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Description: MOSFET N CH 80V 180A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
auf Bestellung 1006 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.1 EUR |
| 50+ | 4.2 EUR |
| 100+ | 3.95 EUR |
| STB20N65M5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 100 V
Description: MOSFET N-CH 650V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STL8N10LF3 |
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Hersteller: STMicroelectronics
Description: MOSFET N CH 100V 20A PWRFLT5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Power Dissipation (Max): 4.3W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N CH 100V 20A PWRFLT5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Power Dissipation (Max): 4.3W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 1.16 EUR |
| STW25N80K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 19.5A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Description: MOSFET N-CH 800V 19.5A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
auf Bestellung 263 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 10.38 EUR |
| 30+ | 7.58 EUR |
| 120+ | 6.4 EUR |
| STL8N10LF3 |
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Hersteller: STMicroelectronics
Description: MOSFET N CH 100V 20A PWRFLT5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Power Dissipation (Max): 4.3W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N CH 100V 20A PWRFLT5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Power Dissipation (Max): 4.3W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4405 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.96 EUR |
| 10+ | 2.56 EUR |
| 100+ | 1.75 EUR |
| 500+ | 1.41 EUR |
| STI300N4F6 |
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Hersteller: STMicroelectronics
Description: MOSFET N CH 40V 160A I2PAK
Description: MOSFET N CH 40V 160A I2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STU80N4F6 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Description: MOSFET N-CH 40V 80A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STL11N4LLF5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 11A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Description: MOSFET N-CH 40V 11A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| STL11N4LLF5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 11A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Description: MOSFET N-CH 40V 11A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STL6N3LLH6 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: PowerFlat™ (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
Description: MOSFET N-CH 30V POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: PowerFlat™ (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
auf Bestellung 1449 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.48 EUR |
| 17+ | 1.08 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.54 EUR |
| STF8N80K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 6A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N-CH 800V 6A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 644 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.96 EUR |
| 50+ | 2.48 EUR |
| 100+ | 2.24 EUR |
| 500+ | 1.82 EUR |
| STP8N80K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 940 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.68 EUR |
| 50+ | 2.33 EUR |
| 100+ | 2.11 EUR |
| 500+ | 1.71 EUR |
| STL6N3LLH6 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: PowerFlat™ (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
Description: MOSFET N-CH 30V POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: PowerFlat™ (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STM32L152C-DISCO |
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Hersteller: STMicroelectronics
Description: DISCOVERY STM32L152 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M3
Board Type: Evaluation Platform
Utilized IC / Part: STM32L152
Platform: Discovery
Part Status: Active
Description: DISCOVERY STM32L152 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M3
Board Type: Evaluation Platform
Utilized IC / Part: STM32L152
Platform: Discovery
Part Status: Active
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 19.57 EUR |
| HCF4010YM013TR |
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Hersteller: STMicroelectronics
Description: IC BUFFER NON-INVERT 20V 16-SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Number of Bits per Element: 1
Current - Output High, Low: 3mA, 36mA
Supplier Device Package: 16-SO
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 3 V ~ 20 V
Voltage - VCCB: 3 V ~ 20 V
Part Status: Active
Number of Circuits: 6
Description: IC BUFFER NON-INVERT 20V 16-SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Number of Bits per Element: 1
Current - Output High, Low: 3mA, 36mA
Supplier Device Package: 16-SO
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 3 V ~ 20 V
Voltage - VCCB: 3 V ~ 20 V
Part Status: Active
Number of Circuits: 6
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.58 EUR |
| HCF4010YM013TR |
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Hersteller: STMicroelectronics
Description: IC BUFFER NON-INVERT 20V 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Number of Bits per Element: 1
Current - Output High, Low: 3mA, 36mA
Supplier Device Package: 16-SO
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 3 V ~ 20 V
Voltage - VCCB: 3 V ~ 20 V
Part Status: Active
Number of Circuits: 6
Description: IC BUFFER NON-INVERT 20V 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Number of Bits per Element: 1
Current - Output High, Low: 3mA, 36mA
Supplier Device Package: 16-SO
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 3 V ~ 20 V
Voltage - VCCB: 3 V ~ 20 V
Part Status: Active
Number of Circuits: 6
auf Bestellung 6718 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.25 EUR |
| 20+ | 0.9 EUR |
| 25+ | 0.81 EUR |
| 100+ | 0.71 EUR |
| 250+ | 0.66 EUR |
| 500+ | 0.63 EUR |
| STEVAL-IKR001V7D |
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Hersteller: STMicroelectronics
Description: BOARD EVAL SPIRIT1
Description: BOARD EVAL SPIRIT1
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| STEVAL-MKI132V1 |
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Hersteller: STMicroelectronics
Description: BOARD EVAL BLUEMOTION FOR MEMS
Description: BOARD EVAL BLUEMOTION FOR MEMS
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| STEVAL-MKI134V1 |
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Hersteller: STMicroelectronics
Description: DIL24 ADAPTER BOARD LIS3DSH
Packaging: Bulk
Sensitivity: 0.06mg/digit, 0.12mg/digit, 0.18mg/digit, 0.24mg/digit, 0.73mg/digit
Function: Accelerometer
Interface: I2C, Serial, SPI
Type: Sensor
Contents: Board(s)
Voltage - Supply: 1.71V ~ 3.6V
Sensor Type: Accelerometer, 3 Axis
Utilized IC / Part: LIS3DSH
Supplied Contents: Board(s)
Embedded: No
Sensing Range: ±2g, 4g, 6g, 8g, 16g
Platform: Professional MEMS Tool
Part Status: Obsolete
Description: DIL24 ADAPTER BOARD LIS3DSH
Packaging: Bulk
Sensitivity: 0.06mg/digit, 0.12mg/digit, 0.18mg/digit, 0.24mg/digit, 0.73mg/digit
Function: Accelerometer
Interface: I2C, Serial, SPI
Type: Sensor
Contents: Board(s)
Voltage - Supply: 1.71V ~ 3.6V
Sensor Type: Accelerometer, 3 Axis
Utilized IC / Part: LIS3DSH
Supplied Contents: Board(s)
Embedded: No
Sensing Range: ±2g, 4g, 6g, 8g, 16g
Platform: Professional MEMS Tool
Part Status: Obsolete
Produkt ist nicht verfügbar
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| STEVAL-ISV003V2 |
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Hersteller: STMicroelectronics
Description: EVAL BOARD FOR STM32F103ZE
Packaging: Bulk
Voltage - Output: 240VAC
Voltage - Input: 18V ~ 55V
Current - Output: 1.06A
Contents: Board(s)
Board Type: Fully Populated
Utilized IC / Part: STM32F103ZE
Supplied Contents: Board(s)
Main Purpose: DC/AC Converter
Outputs and Type: 1 Isolated Output
Part Status: Obsolete
Power - Output: 250 W
Description: EVAL BOARD FOR STM32F103ZE
Packaging: Bulk
Voltage - Output: 240VAC
Voltage - Input: 18V ~ 55V
Current - Output: 1.06A
Contents: Board(s)
Board Type: Fully Populated
Utilized IC / Part: STM32F103ZE
Supplied Contents: Board(s)
Main Purpose: DC/AC Converter
Outputs and Type: 1 Isolated Output
Part Status: Obsolete
Power - Output: 250 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STW57N65M5-4 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
Description: MOSFET N-CH 650V 42A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
Produkt ist nicht verfügbar
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| LMV822IYST |
![]() |
Hersteller: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 300µA (x2 Channels)
Slew Rate: 1.9V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 3.5 mV
Supplier Device Package: 8-MiniSO
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 300µA (x2 Channels)
Slew Rate: 1.9V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 3.5 mV
Supplier Device Package: 8-MiniSO
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1940 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.04 EUR |
| 12+ | 1.49 EUR |
| 25+ | 1.35 EUR |
| 100+ | 1.19 EUR |
| 250+ | 1.12 EUR |
| 500+ | 1.08 EUR |
| 1000+ | 1.04 EUR |
| TSV854AIYPT |
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Hersteller: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x4 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x4 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSV711ICT |
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Hersteller: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SC70-5
Description: IC OPAMP GP 1 CIRCUIT SC70-5
Produkt ist nicht verfügbar
Im Einkaufswagen
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| TSV852AIYDT |
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Hersteller: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x2 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x2 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSV854IYPT |
![]() |
Hersteller: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x4 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 4 mV
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x4 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 4 mV
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSV854IYPT |
![]() |
Hersteller: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x4 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 4 mV
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x4 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 4 mV
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 2331 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.86 EUR |
| 10+ | 4.36 EUR |
| 25+ | 4.12 EUR |
| 100+ | 3.51 EUR |
| 250+ | 3.29 EUR |
| 500+ | 2.88 EUR |
| 1000+ | 2.39 EUR |
| LMV824IYPT |
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Hersteller: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 300µA (x4 Channels)
Slew Rate: 1.9V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 3.5 mV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 300µA (x4 Channels)
Slew Rate: 1.9V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 3.5 mV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LMV822AIYDT |
![]() |
Hersteller: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 300µA (x2 Channels)
Slew Rate: 1.9V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 300µA (x2 Channels)
Slew Rate: 1.9V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH




























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