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STP77N6F6 STP77N6F6 STMicroelectronics STP77N6F6.pdf Description: MOSFET N-CH 60V 77A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 38.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
auf Bestellung 1566 Stücke:
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7+2.69 EUR
10+2.21 EUR
100+1.72 EUR
500+1.46 EUR
1000+1.19 EUR
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STD100N10F7 STD100N10F7 STMicroelectronics en.DM00066568.pdf Description: MOSFET N CH 100V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
auf Bestellung 7889 Stücke:
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5+4.36 EUR
10+2.84 EUR
100+1.96 EUR
500+1.62 EUR
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STD100N10F7 STD100N10F7 STMicroelectronics en.DM00066568.pdf Description: MOSFET N CH 100V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
auf Bestellung 7500 Stücke:
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STH110N10F7-2 STH110N10F7-2 STMicroelectronics STH110N10F7-2%2C-6.pdf Description: MOSFET N CH 100V 110A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
Produkt ist nicht verfügbar
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STP110N10F7 STP110N10F7 STMicroelectronics en.DM00072347.pdf Description: MOSFET N CH 100V 110A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
auf Bestellung 1169 Stücke:
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4+4.86 EUR
50+2.43 EUR
100+2.19 EUR
500+1.78 EUR
1000+1.65 EUR
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STP110N55F6 STP110N55F6 STMicroelectronics STP110N55F6.pdf Description: MOSFET N-CH 55V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8350 pF @ 25 V
Produkt ist nicht verfügbar
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STP80N70F6 STP80N70F6 STMicroelectronics STP80N70F6.pdf Description: MOSFET N-CH 68V 96A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 68 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
Produkt ist nicht verfügbar
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STEVAL-MKI127V1 STEVAL-MKI127V1 STMicroelectronics en.DM00067127.pdf Description: BOARD EVAL FOR L3GD20
Packaging: Box
Sensitivity: 70m°/s, 17.5m°/s, 8.75m°/s
Interface: I2C, Serial, SPI
Sensor Type: Gyroscope, 3 Axis
Utilized IC / Part: L3GD20
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±250°/sec, ±500°/sec, ±2000°/sec
Part Status: Active
Produkt ist nicht verfügbar
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STP24N60M2 STP24N60M2 STMicroelectronics en.DM00070788.pdf Description: MOSFET N-CH 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
auf Bestellung 611 Stücke:
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4+5.16 EUR
50+2.59 EUR
100+2.34 EUR
500+1.91 EUR
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STEVAL-ILD004V1 STEVAL-ILD004V1 STMicroelectronics en.CD00226640.pdf Description: BOARD EVAL FOR TS820
Produkt ist nicht verfügbar
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STC3115IJT STC3115IJT STMicroelectronics en.DM00066800.pdf Description: IC BATT GAS GAUGE LI-ION 10CSP
Packaging: Cut Tape (CT)
Package / Case: 10-WFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-CSP (1.4x2.04)
Part Status: Active
auf Bestellung 7821 Stücke:
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6+3.12 EUR
10+2.28 EUR
25+2.08 EUR
100+1.85 EUR
250+1.74 EUR
500+1.68 EUR
1000+1.62 EUR
2500+1.57 EUR
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STC3115IJT STC3115IJT STMicroelectronics en.DM00066800.pdf Description: IC BATT GAS GAUGE LI-ION 10CSP
Packaging: Tape & Reel (TR)
Package / Case: 10-WFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-CSP (1.4x2.04)
Part Status: Active
auf Bestellung 5000 Stücke:
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5000+1.53 EUR
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SPC560D40L1C4E0X SPC560D40L1C4E0X STMicroelectronics en.CD00249891.pdf Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Grade: Automotive
Number of I/O: 45
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SPC560P40L1CEFAR SPC560P40L1CEFAR STMicroelectronics en.CD00244344.pdf Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 16x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Grade: Automotive
Number of I/O: 37
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SPC560B64L7C6E0X SPC560B64L7C6E0X STMicroelectronics en.CD00215422.pdf Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 53x10/12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 149
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SPC560B60L5C6E0X SPC560B60L5C6E0X STMicroelectronics en.CD00215422.pdf Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 53x10/12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 121
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SPC560B64L5C6E0X SPC560B64L5C6E0X STMicroelectronics en.CD00215422.pdf Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 53x10/12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 121
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SPC56EL60L5CBFSY SPC56EL60L5CBFSY STMicroelectronics CD00227070.pdf Description: IC MCU 32BIT 1MB FLASH 144LQFP
Produkt ist nicht verfügbar
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SPC5-HTCOMP-NLTL SPC5-HTCOMP-NLTL STMicroelectronics Description: HIGHTEC COMPILER FOR SPC56
Produkt ist nicht verfügbar
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SPC560D40L1C4E0X SPC560D40L1C4E0X STMicroelectronics en.CD00249891.pdf Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Grade: Automotive
Number of I/O: 45
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SPC560P40L1CEFAR SPC560P40L1CEFAR STMicroelectronics en.CD00244344.pdf Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 16x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Grade: Automotive
Number of I/O: 37
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SPC56EL70L5CBFR SPC56EL70L5CBFR STMicroelectronics en.DM00070691.pdf Description: IC MCU 32BIT 2MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z4d
Data Converters: A/D 32x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 3.63V
Connectivity: CANbus, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Grade: Automotive
Number of I/O: 96
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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STEVAL-MKI129V3 STEVAL-MKI129V3 STMicroelectronics en.DM00078315.pdf Description: COUPON BOARD MP34DT01
Packaging: Bulk
Function: Microphone
Type: Audio
Utilized IC / Part: MP34DT01
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Obsolete
Contents: Board(s)
Produkt ist nicht verfügbar
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STEVAL-SPBT2ATV3 STEVAL-SPBT2ATV3 STMicroelectronics en.DM00056231.pdf Description: BOARD EVAL FOR SPBT2532C2.AT2
Produkt ist nicht verfügbar
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STEVAL-MKI129V2 STEVAL-MKI129V2 STMicroelectronics audio-ic-eval-boards.html Description: BOARD EVAL FOR MP34DB01
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: MP34DB01
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Obsolete
Produkt ist nicht verfügbar
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STEVAL-MKI129V1 STEVAL-MKI129V1 STMicroelectronics en.DM00072699.pdf Description: COUPON BOARD MP45DT02
Packaging: Bulk
Function: Microphone
Type: Audio
Utilized IC / Part: MP45DT02
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Contents: Board(s)
Produkt ist nicht verfügbar
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STP105N3LL STP105N3LL STMicroelectronics en.DM00071078.pdf Description: MOSFET N-CH 30V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 40A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
auf Bestellung 1329 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.5 EUR
50+1.19 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
Mindestbestellmenge: 8
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STT6N3LLH6 STT6N3LLH6 STMicroelectronics en.DM00051684.pdf Description: MOSFET N-CH 30V 6A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
auf Bestellung 6149 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.27 EUR
21+0.86 EUR
100+0.57 EUR
500+0.44 EUR
1000+0.39 EUR
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STT6N3LLH6 STT6N3LLH6 STMicroelectronics en.DM00051684.pdf Description: MOSFET N-CH 30V 6A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.34 EUR
6000+0.31 EUR
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STH310N10F7-2 STH310N10F7-2 STMicroelectronics en.DM00072096.pdf Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
auf Bestellung 5000 Stücke:
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STH310N10F7-2 STH310N10F7-2 STMicroelectronics en.DM00072096.pdf Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
auf Bestellung 5967 Stücke:
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STTH30S06W STTH30S06W STMicroelectronics 600v-ultrafast-rectifiers.html Description: DIODE GEN PURP 600V 30A DO247-2
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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STU6N65K3 STU6N65K3 STMicroelectronics en.CD00297329.pdf Description: MOSFET N-CH 650V 5.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Produkt ist nicht verfügbar
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STW46NF30 STW46NF30 STMicroelectronics en.DM00022942.pdf Description: MOSFET N-CH 300V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 1051 Stücke:
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3+6.74 EUR
30+3.74 EUR
120+3.08 EUR
510+2.59 EUR
1020+2.41 EUR
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STWA45N65M5 STWA45N65M5 STMicroelectronics en.DM00072250.pdf Description: MOSFET N-CH 650V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Produkt ist nicht verfügbar
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STB24N60M2 STB24N60M2 STMicroelectronics en.DM00070788.pdf Description: MOSFET N-CH 600V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
auf Bestellung 740 Stücke:
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4+5.26 EUR
10+3.43 EUR
100+2.39 EUR
500+2.08 EUR
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STD80N4F6 STD80N4F6 STMicroelectronics en.DM00109418.pdf Description: MOSFET N-CH 40V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4989 Stücke:
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12+1.48 EUR
15+1.24 EUR
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STGF30H60DF STGF30H60DF STMicroelectronics en.DM00040343.pdf Description: IGBT TRENCH FS 600V 60A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 37 W
Produkt ist nicht verfügbar
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STGP20H60DF STGP20H60DF STMicroelectronics en.DM00066598.pdf Description: IGBT TRENCH FS 600V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42.5ns/177ns
Switching Energy: 209µJ (on), 261µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
auf Bestellung 746 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.59 EUR
50+1.76 EUR
100+1.58 EUR
500+1.27 EUR
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STGP30H60DF STGP30H60DF STMicroelectronics en.DM00040343.pdf Description: IGBT TRENCH FS 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Produkt ist nicht verfügbar
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STGP35HF60W STGP35HF60W STMicroelectronics Description: IGBT 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 30ns/175ns
Switching Energy: 290µJ (on), 185µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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STP240N10F7 STP240N10F7 STMicroelectronics en.DM00070204.pdf Description: MOSFET N-CH 100V 180A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
auf Bestellung 8461 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.48 EUR
50+3.89 EUR
100+3.54 EUR
500+2.93 EUR
1000+2.75 EUR
Mindestbestellmenge: 3
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STP7N80K5 STP7N80K5 STMicroelectronics en.DM00060222.pdf Description: MOSFET N-CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
auf Bestellung 688 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.28 EUR
50+2.12 EUR
100+1.91 EUR
500+1.54 EUR
Mindestbestellmenge: 5
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STP9NM40N STP9NM40N STMicroelectronics en.DM00067012.pdf Description: MOSFET N-CH 400V 5.6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V
Produkt ist nicht verfügbar
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LET9070CB LET9070CB STMicroelectronics en.DM00067622.pdf Description: RF MOSFET LDMOS 28V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 12A
Frequency: 945MHz
Power - Output: 80W
Gain: 16dB
Technology: LDMOS
Supplier Device Package: M243
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 400 mA
Produkt ist nicht verfügbar
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STAC2933 STAC2933 STMicroelectronics en.DM00046494.pdf Description: RF MOSFET 50V STAC177B
Packaging: Box
Package / Case: STAC177B
Current Rating (Amps): 40A
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 400W
Gain: 23.5dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC177B
Voltage - Rated: 130 V
Voltage - Test: 50 V
Current - Test: 250 mA
Produkt ist nicht verfügbar
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STAC2943 STAC2943 STMicroelectronics en.DM00046491.pdf Description: RF MOSFET 50V STAC177B
Packaging: Box
Package / Case: STAC177B
Current Rating (Amps): 40A
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 350W
Gain: 25dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC177B
Voltage - Rated: 130 V
Voltage - Test: 50 V
Current - Test: 250 mA
Produkt ist nicht verfügbar
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STAC4933 STAC4933 STMicroelectronics en.DM00046797.pdf Description: RF MOSFET 50V STAC177B
Packaging: Box
Package / Case: STAC177B
Current Rating (Amps): 40A
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 300W
Gain: 24dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC177B
Part Status: Obsolete
Voltage - Rated: 200 V
Voltage - Test: 50 V
Current - Test: 250 mA
Produkt ist nicht verfügbar
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STB24N60M2 STB24N60M2 STMicroelectronics en.DM00070788.pdf Description: MOSFET N-CH 600V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
Produkt ist nicht verfügbar
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STD80N4F6 STD80N4F6 STMicroelectronics en.DM00109418.pdf Description: MOSFET N-CH 40V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.94 EUR
Mindestbestellmenge: 2500
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STFI10N65K3 STFI10N65K3 STMicroelectronics en.CD00235865.pdf Description: MOSFET N-CH 650V 10A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Produkt ist nicht verfügbar
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STFI130N10F3 STFI130N10F3 STMicroelectronics en.DM00022938.pdf Description: MOSFET N-CH 100V 46A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 23A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3305 pF @ 25 V
Produkt ist nicht verfügbar
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STGF17NC60SD STGF17NC60SD STMicroelectronics STGF17NC60SD_ds.pdf Description: IGBT 600V 17A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 12A
Supplier Device Package: TO-220FP
Td (on/off) @ 25°C: 17.5ns/175ns
Switching Energy: 135µJ (on), 815µJ (off)
Test Condition: 480V, 12A, 10Ohm, 15V
Gate Charge: 54.5 nC
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 32 W
Produkt ist nicht verfügbar
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STH310N10F7-6 STH310N10F7-6 STMicroelectronics en.DM00072096.pdf Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Produkt ist nicht verfügbar
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STH310N10F7-6 STH310N10F7-6 STMicroelectronics en.DM00072096.pdf Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.06 EUR
10+6.78 EUR
100+4.94 EUR
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STL22N65M5 STL22N65M5 STMicroelectronics en.DM00062074.pdf Description: MOSFET N-CH 650V 15A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 100 V
Produkt ist nicht verfügbar
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STL36N55M5 STL36N55M5 STMicroelectronics en.DM00044786.pdf Description: MOSFET N-CH 550V 22.5A 4PWRFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 100 V
Produkt ist nicht verfügbar
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STL42N65M5 STL42N65M5 STMicroelectronics STL42N65M5.pdf Description: MOSFET N-CH 650V 4A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V
Power Dissipation (Max): 3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 100 V
Produkt ist nicht verfügbar
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STF7N80K5 STF7N80K5 STMicroelectronics stf7n80k5.pdf Description: MOSFET N CH 800V 6A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
Produkt ist nicht verfügbar
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STFI24N60M2 STFI24N60M2 STMicroelectronics en.DM00071944.pdf Description: MOSFET N CH 600V 18A TO281
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
Produkt ist nicht verfügbar
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STP77N6F6 STP77N6F6.pdf
STP77N6F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 77A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 38.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
auf Bestellung 1566 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
10+2.21 EUR
100+1.72 EUR
500+1.46 EUR
1000+1.19 EUR
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STD100N10F7 en.DM00066568.pdf
STD100N10F7
Hersteller: STMicroelectronics
Description: MOSFET N CH 100V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
auf Bestellung 7889 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.36 EUR
10+2.84 EUR
100+1.96 EUR
500+1.62 EUR
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STD100N10F7 en.DM00066568.pdf
STD100N10F7
Hersteller: STMicroelectronics
Description: MOSFET N CH 100V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.33 EUR
Mindestbestellmenge: 2500
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STH110N10F7-2 STH110N10F7-2%2C-6.pdf
STH110N10F7-2
Hersteller: STMicroelectronics
Description: MOSFET N CH 100V 110A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
Produkt ist nicht verfügbar
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STP110N10F7 en.DM00072347.pdf
STP110N10F7
Hersteller: STMicroelectronics
Description: MOSFET N CH 100V 110A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
auf Bestellung 1169 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.86 EUR
50+2.43 EUR
100+2.19 EUR
500+1.78 EUR
1000+1.65 EUR
Mindestbestellmenge: 4
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STP110N55F6 STP110N55F6.pdf
STP110N55F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 55V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8350 pF @ 25 V
Produkt ist nicht verfügbar
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STP80N70F6 STP80N70F6.pdf
STP80N70F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 68V 96A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 68 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
Produkt ist nicht verfügbar
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STEVAL-MKI127V1 en.DM00067127.pdf
STEVAL-MKI127V1
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR L3GD20
Packaging: Box
Sensitivity: 70m°/s, 17.5m°/s, 8.75m°/s
Interface: I2C, Serial, SPI
Sensor Type: Gyroscope, 3 Axis
Utilized IC / Part: L3GD20
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±250°/sec, ±500°/sec, ±2000°/sec
Part Status: Active
Produkt ist nicht verfügbar
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STP24N60M2 en.DM00070788.pdf
STP24N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
auf Bestellung 611 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.16 EUR
50+2.59 EUR
100+2.34 EUR
500+1.91 EUR
Mindestbestellmenge: 4
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STEVAL-ILD004V1 en.CD00226640.pdf
STEVAL-ILD004V1
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR TS820
Produkt ist nicht verfügbar
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STC3115IJT en.DM00066800.pdf
STC3115IJT
Hersteller: STMicroelectronics
Description: IC BATT GAS GAUGE LI-ION 10CSP
Packaging: Cut Tape (CT)
Package / Case: 10-WFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-CSP (1.4x2.04)
Part Status: Active
auf Bestellung 7821 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.12 EUR
10+2.28 EUR
25+2.08 EUR
100+1.85 EUR
250+1.74 EUR
500+1.68 EUR
1000+1.62 EUR
2500+1.57 EUR
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STC3115IJT en.DM00066800.pdf
STC3115IJT
Hersteller: STMicroelectronics
Description: IC BATT GAS GAUGE LI-ION 10CSP
Packaging: Tape & Reel (TR)
Package / Case: 10-WFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-CSP (1.4x2.04)
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.53 EUR
Mindestbestellmenge: 5000
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SPC560D40L1C4E0X en.CD00249891.pdf
SPC560D40L1C4E0X
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Grade: Automotive
Number of I/O: 45
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SPC560P40L1CEFAR en.CD00244344.pdf
SPC560P40L1CEFAR
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 16x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Grade: Automotive
Number of I/O: 37
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SPC560B64L7C6E0X en.CD00215422.pdf
SPC560B64L7C6E0X
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 53x10/12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 149
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SPC560B60L5C6E0X en.CD00215422.pdf
SPC560B60L5C6E0X
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 53x10/12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 121
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SPC560B64L5C6E0X en.CD00215422.pdf
SPC560B64L5C6E0X
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 53x10/12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 121
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SPC56EL60L5CBFSY CD00227070.pdf
SPC56EL60L5CBFSY
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Produkt ist nicht verfügbar
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SPC5-HTCOMP-NLTL
SPC5-HTCOMP-NLTL
Hersteller: STMicroelectronics
Description: HIGHTEC COMPILER FOR SPC56
Produkt ist nicht verfügbar
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SPC560D40L1C4E0X en.CD00249891.pdf
SPC560D40L1C4E0X
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Grade: Automotive
Number of I/O: 45
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SPC560P40L1CEFAR en.CD00244344.pdf
SPC560P40L1CEFAR
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 16x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Grade: Automotive
Number of I/O: 37
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SPC56EL70L5CBFR en.DM00070691.pdf
SPC56EL70L5CBFR
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z4d
Data Converters: A/D 32x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 3.63V
Connectivity: CANbus, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Grade: Automotive
Number of I/O: 96
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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STEVAL-MKI129V3 en.DM00078315.pdf
STEVAL-MKI129V3
Hersteller: STMicroelectronics
Description: COUPON BOARD MP34DT01
Packaging: Bulk
Function: Microphone
Type: Audio
Utilized IC / Part: MP34DT01
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Obsolete
Contents: Board(s)
Produkt ist nicht verfügbar
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STEVAL-SPBT2ATV3 en.DM00056231.pdf
STEVAL-SPBT2ATV3
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR SPBT2532C2.AT2
Produkt ist nicht verfügbar
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STEVAL-MKI129V2 audio-ic-eval-boards.html
STEVAL-MKI129V2
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR MP34DB01
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: MP34DB01
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Obsolete
Produkt ist nicht verfügbar
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STEVAL-MKI129V1 en.DM00072699.pdf
STEVAL-MKI129V1
Hersteller: STMicroelectronics
Description: COUPON BOARD MP45DT02
Packaging: Bulk
Function: Microphone
Type: Audio
Utilized IC / Part: MP45DT02
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Contents: Board(s)
Produkt ist nicht verfügbar
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STP105N3LL en.DM00071078.pdf
STP105N3LL
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 40A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
auf Bestellung 1329 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
50+1.19 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
Mindestbestellmenge: 8
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STT6N3LLH6 en.DM00051684.pdf
STT6N3LLH6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 6A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
auf Bestellung 6149 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
21+0.86 EUR
100+0.57 EUR
500+0.44 EUR
1000+0.39 EUR
Mindestbestellmenge: 14
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STT6N3LLH6 en.DM00051684.pdf
STT6N3LLH6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 6A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.34 EUR
6000+0.31 EUR
Mindestbestellmenge: 3000
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STH310N10F7-2 en.DM00072096.pdf
STH310N10F7-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.75 EUR
Mindestbestellmenge: 1000
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STH310N10F7-2 en.DM00072096.pdf
STH310N10F7-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
auf Bestellung 5967 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.18 EUR
10+5.92 EUR
100+4.59 EUR
Mindestbestellmenge: 3
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STTH30S06W 600v-ultrafast-rectifiers.html
STTH30S06W
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 30A DO247-2
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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STU6N65K3 en.CD00297329.pdf
STU6N65K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 5.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Produkt ist nicht verfügbar
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STW46NF30 en.DM00022942.pdf
STW46NF30
Hersteller: STMicroelectronics
Description: MOSFET N-CH 300V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 1051 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.74 EUR
30+3.74 EUR
120+3.08 EUR
510+2.59 EUR
1020+2.41 EUR
Mindestbestellmenge: 3
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STWA45N65M5 en.DM00072250.pdf
STWA45N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Produkt ist nicht verfügbar
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STB24N60M2 en.DM00070788.pdf
STB24N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
auf Bestellung 740 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.26 EUR
10+3.43 EUR
100+2.39 EUR
500+2.08 EUR
Mindestbestellmenge: 4
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STD80N4F6 en.DM00109418.pdf
STD80N4F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4989 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
15+1.24 EUR
100+1.15 EUR
Mindestbestellmenge: 12
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STGF30H60DF en.DM00040343.pdf
STGF30H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 37 W
Produkt ist nicht verfügbar
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STGP20H60DF en.DM00066598.pdf
STGP20H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42.5ns/177ns
Switching Energy: 209µJ (on), 261µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
auf Bestellung 746 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.59 EUR
50+1.76 EUR
100+1.58 EUR
500+1.27 EUR
Mindestbestellmenge: 5
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STGP30H60DF en.DM00040343.pdf
STGP30H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Produkt ist nicht verfügbar
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STGP35HF60W
STGP35HF60W
Hersteller: STMicroelectronics
Description: IGBT 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 30ns/175ns
Switching Energy: 290µJ (on), 185µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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STP240N10F7 en.DM00070204.pdf
STP240N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
auf Bestellung 8461 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.48 EUR
50+3.89 EUR
100+3.54 EUR
500+2.93 EUR
1000+2.75 EUR
Mindestbestellmenge: 3
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STP7N80K5 en.DM00060222.pdf
STP7N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
auf Bestellung 688 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.28 EUR
50+2.12 EUR
100+1.91 EUR
500+1.54 EUR
Mindestbestellmenge: 5
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STP9NM40N en.DM00067012.pdf
STP9NM40N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 400V 5.6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V
Produkt ist nicht verfügbar
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LET9070CB en.DM00067622.pdf
LET9070CB
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS 28V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 12A
Frequency: 945MHz
Power - Output: 80W
Gain: 16dB
Technology: LDMOS
Supplier Device Package: M243
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 400 mA
Produkt ist nicht verfügbar
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STAC2933 en.DM00046494.pdf
STAC2933
Hersteller: STMicroelectronics
Description: RF MOSFET 50V STAC177B
Packaging: Box
Package / Case: STAC177B
Current Rating (Amps): 40A
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 400W
Gain: 23.5dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC177B
Voltage - Rated: 130 V
Voltage - Test: 50 V
Current - Test: 250 mA
Produkt ist nicht verfügbar
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STAC2943 en.DM00046491.pdf
STAC2943
Hersteller: STMicroelectronics
Description: RF MOSFET 50V STAC177B
Packaging: Box
Package / Case: STAC177B
Current Rating (Amps): 40A
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 350W
Gain: 25dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC177B
Voltage - Rated: 130 V
Voltage - Test: 50 V
Current - Test: 250 mA
Produkt ist nicht verfügbar
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STAC4933 en.DM00046797.pdf
STAC4933
Hersteller: STMicroelectronics
Description: RF MOSFET 50V STAC177B
Packaging: Box
Package / Case: STAC177B
Current Rating (Amps): 40A
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 300W
Gain: 24dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC177B
Part Status: Obsolete
Voltage - Rated: 200 V
Voltage - Test: 50 V
Current - Test: 250 mA
Produkt ist nicht verfügbar
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STB24N60M2 en.DM00070788.pdf
STB24N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
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STD80N4F6 en.DM00109418.pdf
STD80N4F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.94 EUR
Mindestbestellmenge: 2500
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STFI10N65K3 en.CD00235865.pdf
STFI10N65K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 10A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Produkt ist nicht verfügbar
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STFI130N10F3 en.DM00022938.pdf
STFI130N10F3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 46A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 23A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3305 pF @ 25 V
Produkt ist nicht verfügbar
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STGF17NC60SD STGF17NC60SD_ds.pdf
STGF17NC60SD
Hersteller: STMicroelectronics
Description: IGBT 600V 17A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 12A
Supplier Device Package: TO-220FP
Td (on/off) @ 25°C: 17.5ns/175ns
Switching Energy: 135µJ (on), 815µJ (off)
Test Condition: 480V, 12A, 10Ohm, 15V
Gate Charge: 54.5 nC
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 32 W
Produkt ist nicht verfügbar
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STH310N10F7-6 en.DM00072096.pdf
STH310N10F7-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
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STH310N10F7-6 en.DM00072096.pdf
STH310N10F7-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.06 EUR
10+6.78 EUR
100+4.94 EUR
Mindestbestellmenge: 2
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STL22N65M5 en.DM00062074.pdf
STL22N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 100 V
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STL36N55M5 en.DM00044786.pdf
STL36N55M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 550V 22.5A 4PWRFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 100 V
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STL42N65M5 STL42N65M5.pdf
STL42N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 4A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V
Power Dissipation (Max): 3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 100 V
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STF7N80K5 stf7n80k5.pdf
STF7N80K5
Hersteller: STMicroelectronics
Description: MOSFET N CH 800V 6A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
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STFI24N60M2 en.DM00071944.pdf
STFI24N60M2
Hersteller: STMicroelectronics
Description: MOSFET N CH 600V 18A TO281
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
Produkt ist nicht verfügbar
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