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ECMF02-4CMX8 ECMF02-4CMX8 STMicroelectronics dm00039389.pdf Description: CMC 2LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.047" W (2.50mm x 1.20mm)
Mounting Type: Surface Mount
Number of Lines: 2
Operating Temperature: -30°C ~ 85°C
Height (Max): 0.022" (0.55mm)
DC Resistance (DCR) (Max): 4Ohm
Part Status: Active
Produkt ist nicht verfügbar
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STTH810GY-TR STTH810GY-TR STMicroelectronics en.DM00031453.pdf Description: DIODE STANDARD 1000V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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ESDA25SC6Y ESDA25SC6Y STMicroelectronics en.DM00231412.pdf Description: TVS DIODE 24VWM 51VC SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 25V
Voltage - Clamping (Max) @ Ipp: 51V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ESDA5V3SC6Y ESDA5V3SC6Y STMicroelectronics en.DM00231412.pdf Description: TVS DIODE 3VWM 21VC SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 22A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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STD65N3LLH5 STD65N3LLH5 STMicroelectronics en.CD00268670.pdf Description: MOSFET N CH 30V 65A DPAK
Produkt ist nicht verfügbar
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STTH1210DY STTH1210DY STMicroelectronics en.DM00031451.pdf Description: DIODE STANDARD 1000V 12A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
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STN9360 STN9360 STMicroelectronics en.DM00055595.pdf Description: TRANS PNP 600V 0.5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1.6 W
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STPS20L60CGY-TR STPS20L60CGY-TR STMicroelectronics STPS20L60C-Y.pdf Description: DIODE ARRAY SCHOTT 60V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Qualification: AEC-Q101
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STPS340SY STPS340SY STMicroelectronics en.CD00270569.pdf Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
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T830-8FP T830-8FP STMicroelectronics DM00058404.pdf Description: TRIAC ALTERNISTOR 800V TO220FPAB
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STPS340UY STPS340UY STMicroelectronics en.CD00270569.pdf Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
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STTH1003SBY-TR STTH1003SBY-TR STMicroelectronics en.DM00042790.pdf Description: DIODE STANDARD 300V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
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STGIPL35K120L1 STGIPL35K120L1 STMicroelectronics STGIPL35K120L1.pdf Description: POWER DRIVER IGBT 1200V SDIP-18L
Packaging: Tube
Package / Case: 18-PowerDIP Module (1.087", 27.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 1 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 35 A
Voltage: 1.2 kV
Produkt ist nicht verfügbar
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STD10P6F6 STD10P6F6 STMicroelectronics STD10P6F6.pdf Description: MOSFET P CH 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
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STP10P6F6 STP10P6F6 STMicroelectronics STD10P6F6.pdf Description: MOSFET P-CH 60V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
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STP46NF30 STP46NF30 STMicroelectronics en.DM00022942.pdf Description: MOSFET N CH 300V 42A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
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STD9NM40N STD9NM40N STMicroelectronics en.DM00067012.pdf Description: MOSFET N-CH 400V 5.6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STL60N32N3LL STL60N32N3LL STMicroelectronics STL60N32N3LL.pdf Description: MOSFET 2N-CH 30V 32A/60A PWRFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 23W, 50W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: PowerFlat™ (5x6)
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STTH8T06DI STTH8T06DI STMicroelectronics en.DM00059176.pdf Description: DIODE GP 600V 8A TO220AC INS
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220AC ins
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Insulated, TO-220AC
Packaging: Tube
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STU65N3LLH5 STU65N3LLH5 STMicroelectronics en.CD00268670.pdf Description: MOSFET N CH 30V 65A IPAK
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STW15N80K5 STW15N80K5 STMicroelectronics en.DM00060560.pdf Description: MOSFET N-CH 800V 14A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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ECMF02-4CMX8 ECMF02-4CMX8 STMicroelectronics dm00039389.pdf Description: CMC 2LN SMD ESD
Packaging: Cut Tape (CT)
Features: TVS Diode ESD Protection
Package / Case: 8-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.047" W (2.50mm x 1.20mm)
Mounting Type: Surface Mount
Number of Lines: 2
Operating Temperature: -30°C ~ 85°C
Height (Max): 0.022" (0.55mm)
DC Resistance (DCR) (Max): 4Ohm
Part Status: Active
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ESDA25SC6Y ESDA25SC6Y STMicroelectronics en.DM00231412.pdf Description: TVS DIODE 24VWM 51VC SOT23-6
Voltage - Breakdown (Min): 25V
Unidirectional Channels: 4
Supplier Device Package: SOT-23-6
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 51V
Qualification: AEC-Q101
Grade: Automotive
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ESDA5V3SC6Y ESDA5V3SC6Y STMicroelectronics en.DM00231412.pdf Description: TVS DIODE 3VWM 21VC SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 22A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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STB15N80K5 STB15N80K5 STMicroelectronics en.DM00060560.pdf Description: MOSFET N CH 800V 14A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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STTH2003CGY-TR STTH2003CGY-TR STMicroelectronics en.DM00040839.pdf Description: DIODE ARRAY GP 300V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
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STD10P6F6 STD10P6F6 STMicroelectronics STD10P6F6.pdf Description: MOSFET P CH 60V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
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STD65N3LLH5 STD65N3LLH5 STMicroelectronics en.CD00268670.pdf Description: MOSFET N CH 30V 65A DPAK
Produkt ist nicht verfügbar
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STD9NM40N STD9NM40N STMicroelectronics en.DM00067012.pdf Description: MOSFET N-CH 400V 5.6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STTH810GY-TR STTH810GY-TR STMicroelectronics en.DM00031453.pdf Description: DIODE STANDARD 1000V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
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STL10DN15F3 STMicroelectronics DM00067592.pdf Description: MOSFET 2N-CH 150V 10A POWERFLAT
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STL10DN15F3 STMicroelectronics DM00067592.pdf Description: MOSFET 2N-CH 150V 10A POWERFLAT
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STN9360 STN9360 STMicroelectronics en.DM00055595.pdf Description: TRANS PNP 600V 0.5A SOT-223
Power - Max: 1.6 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-223
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 5V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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STTH1003SBY-TR STTH1003SBY-TR STMicroelectronics en.DM00042790.pdf Description: DIODE STANDARD 300V 10A DPAK
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
Grade: Automotive
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STPS20L60CGY-TR STPS20L60CGY-TR STMicroelectronics STPS20L60C-Y.pdf Description: DIODE ARRAY SCHOTT 60V 10A D2PAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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100+1.63 EUR
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STF15N80K5 STF15N80K5 STMicroelectronics en.DM00060560.pdf Description: MOSFET N-CH 800V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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STI34N65M5 STI34N65M5 STMicroelectronics en.DM00049181.pdf Description: MOSFET N-CH 650V 28A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Produkt ist nicht verfügbar
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STB15N80K5 STB15N80K5 STMicroelectronics en.DM00060560.pdf Description: MOSFET N CH 800V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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STP15N80K5 STP15N80K5 STMicroelectronics en.DM00060560.pdf Description: MOSFET N-CH 800V 14A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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STL10DN15F3 STMicroelectronics DM00067592.pdf Description: MOSFET 2N-CH 150V 10A POWERFLAT
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STPSC4H065D STPSC4H065D STMicroelectronics en.DM00063407.pdf Description: DIODE SCHOTTKY 650V 4A TO220AC
auf Bestellung 1178 Stücke:
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STPS340SY STPS340SY STMicroelectronics en.CD00270569.pdf Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
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STPS340UY STPS340UY STMicroelectronics en.CD00270569.pdf Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
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STPSC10H065B-TR STPSC10H065B-TR STMicroelectronics en.DM00063471.pdf Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
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STPSC10H065G-TR STPSC10H065G-TR STMicroelectronics en.DM00063471.pdf Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
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STPSC4H065B-TR STPSC4H065B-TR STMicroelectronics en.DM00063407.pdf Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
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STPSC8H065B-TR STPSC8H065B-TR STMicroelectronics en.DM00063470.pdf Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
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STPSC8H065G-TR STPSC8H065G-TR STMicroelectronics en.DM00063470.pdf Description: DIODE SIL CARBIDE 650V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Produkt ist nicht verfügbar
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STPSC10H065D STPSC10H065D STMicroelectronics en.DM00063471.pdf Description: 650 V 10 A power Schottky silico
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
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STPSC20H065CW STPSC20H065CW STMicroelectronics en.DM00063472.pdf Description: DIODE ARRAY SIC 650V 10A TO-247
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2+13.53 EUR
30+7.75 EUR
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STPSC8H065D STPSC8H065D STMicroelectronics en.DM00063470.pdf Description: DIODE SCHOTTKY 650V 8A TO220AC
auf Bestellung 1000 Stücke:
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STPSC10H065G-TR STPSC10H065G-TR STMicroelectronics en.DM00063471.pdf Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
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STPSC10H065B-TR STPSC10H065B-TR STMicroelectronics en.DM00063471.pdf Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
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STPSC4H065B-TR STPSC4H065B-TR STMicroelectronics en.DM00063407.pdf Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 926 Stücke:
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7+3.33 EUR
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100+2.2 EUR
500+1.86 EUR
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STPSC8H065B-TR STPSC8H065B-TR STMicroelectronics en.DM00063470.pdf Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 13528 Stücke:
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4+5.93 EUR
10+3.37 EUR
100+2.74 EUR
500+2.36 EUR
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STPSC8H065G-TR STPSC8H065G-TR STMicroelectronics en.DM00063470.pdf Description: DIODE SIL CARBIDE 650V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Produkt ist nicht verfügbar
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EV-VND5E160AJ EV-VND5E160AJ STMicroelectronics en.DM00070774.pdf Description: BOARD EVAL FOR VND5E160AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E160AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Produkt ist nicht verfügbar
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EV-VND5T100AJ EV-VND5T100AJ STMicroelectronics en.DM00509645.pdf Description: BOARD EVAL FOR VND5T100AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5T100AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Produkt ist nicht verfügbar
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EV-VND5E050AJ EV-VND5E050AJ STMicroelectronics en.DM00070773.pdf Description: BOARD EVAL FOR VND5E050AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E050AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.32 EUR
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EV-VND5E160J EV-VND5E160J STMicroelectronics en.DM00070777.pdf Description: EVAL BOARD FOR VND5E160J
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: VND5E160J
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Produkt ist nicht verfügbar
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ECMF02-4CMX8 dm00039389.pdf
ECMF02-4CMX8
Hersteller: STMicroelectronics
Description: CMC 2LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.047" W (2.50mm x 1.20mm)
Mounting Type: Surface Mount
Number of Lines: 2
Operating Temperature: -30°C ~ 85°C
Height (Max): 0.022" (0.55mm)
DC Resistance (DCR) (Max): 4Ohm
Part Status: Active
Produkt ist nicht verfügbar
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STTH810GY-TR en.DM00031453.pdf
STTH810GY-TR
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1000V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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ESDA25SC6Y en.DM00231412.pdf
ESDA25SC6Y
Hersteller: STMicroelectronics
Description: TVS DIODE 24VWM 51VC SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 25V
Voltage - Clamping (Max) @ Ipp: 51V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.31 EUR
6000+0.29 EUR
9000+0.27 EUR
Mindestbestellmenge: 3000 Stücke
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ESDA5V3SC6Y en.DM00231412.pdf
ESDA5V3SC6Y
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 21VC SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 22A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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STD65N3LLH5 en.CD00268670.pdf
STD65N3LLH5
Hersteller: STMicroelectronics
Description: MOSFET N CH 30V 65A DPAK
Produkt ist nicht verfügbar
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STTH1210DY en.DM00031451.pdf
STTH1210DY
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1000V 12A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.16 EUR
50+2.01 EUR
Mindestbestellmenge: 6 Stücke
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STN9360 en.DM00055595.pdf
STN9360
Hersteller: STMicroelectronics
Description: TRANS PNP 600V 0.5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1.6 W
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+0.55 EUR
2000+0.5 EUR
3000+0.48 EUR
5000+0.45 EUR
Mindestbestellmenge: 1000 Stücke
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STPS20L60CGY-TR STPS20L60C-Y.pdf
STPS20L60CGY-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTT 60V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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STPS340SY en.CD00270569.pdf
STPS340SY
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.31 EUR
5000+0.29 EUR
7500+0.27 EUR
Mindestbestellmenge: 2500 Stücke
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T830-8FP DM00058404.pdf
T830-8FP
Hersteller: STMicroelectronics
Description: TRIAC ALTERNISTOR 800V TO220FPAB
auf Bestellung 881 Stücke:
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STPS340UY en.CD00270569.pdf
STPS340UY
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.26 EUR
5000+0.24 EUR
7500+0.23 EUR
Mindestbestellmenge: 2500 Stücke
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STTH1003SBY-TR en.DM00042790.pdf
STTH1003SBY-TR
Hersteller: STMicroelectronics
Description: DIODE STANDARD 300V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.51 EUR
Mindestbestellmenge: 2500 Stücke
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STGIPL35K120L1 STGIPL35K120L1.pdf
STGIPL35K120L1
Hersteller: STMicroelectronics
Description: POWER DRIVER IGBT 1200V SDIP-18L
Packaging: Tube
Package / Case: 18-PowerDIP Module (1.087", 27.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 1 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 35 A
Voltage: 1.2 kV
Produkt ist nicht verfügbar
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STD10P6F6 STD10P6F6.pdf
STD10P6F6
Hersteller: STMicroelectronics
Description: MOSFET P CH 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.69 EUR
5000+0.64 EUR
7500+0.62 EUR
12500+0.58 EUR
17500+0.57 EUR
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STP10P6F6 STD10P6F6.pdf
STP10P6F6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 60V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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STP46NF30 en.DM00022942.pdf
STP46NF30
Hersteller: STMicroelectronics
Description: MOSFET N CH 300V 42A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 546 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.52 EUR
50+3.84 EUR
100+3.49 EUR
500+2.87 EUR
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STD9NM40N en.DM00067012.pdf
STD9NM40N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 400V 5.6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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STL60N32N3LL STL60N32N3LL.pdf
STL60N32N3LL
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 30V 32A/60A PWRFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 23W, 50W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: PowerFlat™ (5x6)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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STTH8T06DI en.DM00059176.pdf
STTH8T06DI
Hersteller: STMicroelectronics
Description: DIODE GP 600V 8A TO220AC INS
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220AC ins
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Insulated, TO-220AC
Packaging: Tube
auf Bestellung 870 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.58 EUR
50+2.88 EUR
100+2.37 EUR
500+2 EUR
Mindestbestellmenge: 6 Stücke
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STU65N3LLH5 en.CD00268670.pdf
STU65N3LLH5
Hersteller: STMicroelectronics
Description: MOSFET N CH 30V 65A IPAK
auf Bestellung 1435 Stücke:
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STW15N80K5 en.DM00060560.pdf
STW15N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 14A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 586 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.01 EUR
30+4.18 EUR
120+3.77 EUR
510+3.71 EUR
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ECMF02-4CMX8 dm00039389.pdf
ECMF02-4CMX8
Hersteller: STMicroelectronics
Description: CMC 2LN SMD ESD
Packaging: Cut Tape (CT)
Features: TVS Diode ESD Protection
Package / Case: 8-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.047" W (2.50mm x 1.20mm)
Mounting Type: Surface Mount
Number of Lines: 2
Operating Temperature: -30°C ~ 85°C
Height (Max): 0.022" (0.55mm)
DC Resistance (DCR) (Max): 4Ohm
Part Status: Active
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.86 EUR
30+0.71 EUR
32+0.67 EUR
50+0.62 EUR
Mindestbestellmenge: 25 Stücke
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ESDA25SC6Y en.DM00231412.pdf
ESDA25SC6Y
Hersteller: STMicroelectronics
Description: TVS DIODE 24VWM 51VC SOT23-6
Voltage - Breakdown (Min): 25V
Unidirectional Channels: 4
Supplier Device Package: SOT-23-6
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 51V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 13485 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.34 EUR
26+0.83 EUR
100+0.54 EUR
500+0.4 EUR
1000+0.37 EUR
Mindestbestellmenge: 16 Stücke
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ESDA5V3SC6Y en.DM00231412.pdf
ESDA5V3SC6Y
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 21VC SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 22A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3231 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.34 EUR
26+0.83 EUR
100+0.54 EUR
500+0.4 EUR
1000+0.37 EUR
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STB15N80K5 en.DM00060560.pdf
STB15N80K5
Hersteller: STMicroelectronics
Description: MOSFET N CH 800V 14A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 951 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.62 EUR
10+7.06 EUR
100+5.08 EUR
500+5.01 EUR
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STTH2003CGY-TR en.DM00040839.pdf
STTH2003CGY-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 300V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
auf Bestellung 901 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.63 EUR
10+3.65 EUR
100+2.51 EUR
500+2.03 EUR
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STD10P6F6 STD10P6F6.pdf
STD10P6F6
Hersteller: STMicroelectronics
Description: MOSFET P CH 60V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
auf Bestellung 21903 Stücke:
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AnzahlPrivatkunde
8+2.62 EUR
13+1.65 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.77 EUR
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STD65N3LLH5 en.CD00268670.pdf
STD65N3LLH5
Hersteller: STMicroelectronics
Description: MOSFET N CH 30V 65A DPAK
Produkt ist nicht verfügbar
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STD9NM40N en.DM00067012.pdf
STD9NM40N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 400V 5.6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STTH810GY-TR en.DM00031453.pdf
STTH810GY-TR
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1000V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STL10DN15F3 DM00067592.pdf
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 150V 10A POWERFLAT
Produkt ist nicht verfügbar
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STL10DN15F3 DM00067592.pdf
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 150V 10A POWERFLAT
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STN9360 en.DM00055595.pdf
STN9360
Hersteller: STMicroelectronics
Description: TRANS PNP 600V 0.5A SOT-223
Power - Max: 1.6 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-223
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 5V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 6730 Stücke:
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11+1.95 EUR
18+1.21 EUR
100+0.79 EUR
500+0.61 EUR
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STTH1003SBY-TR en.DM00042790.pdf
STTH1003SBY-TR
Hersteller: STMicroelectronics
Description: DIODE STANDARD 300V 10A DPAK
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4962 Stücke:
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AnzahlPrivatkunde
15+1.44 EUR
20+1.07 EUR
100+0.94 EUR
500+0.73 EUR
1000+0.67 EUR
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STPS20L60CGY-TR STPS20L60C-Y.pdf
STPS20L60CGY-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTT 60V 10A D2PAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 387 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.06 EUR
11+2.08 EUR
100+1.63 EUR
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STF15N80K5 en.DM00060560.pdf
STF15N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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STI34N65M5 en.DM00049181.pdf
STI34N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 28A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Produkt ist nicht verfügbar
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STB15N80K5 en.DM00060560.pdf
STB15N80K5
Hersteller: STMicroelectronics
Description: MOSFET N CH 800V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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STP15N80K5 en.DM00060560.pdf
STP15N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 14A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 394 Stücke:
Lieferzeit 10-14 Tag (e)
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2+10.66 EUR
50+5.59 EUR
100+5.11 EUR
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STL10DN15F3 DM00067592.pdf
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 150V 10A POWERFLAT
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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STPSC4H065D en.DM00063407.pdf
STPSC4H065D
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 650V 4A TO220AC
auf Bestellung 1178 Stücke:
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STPS340SY en.CD00270569.pdf
STPS340SY
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 8025 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.32 EUR
26+0.82 EUR
100+0.52 EUR
500+0.4 EUR
1000+0.36 EUR
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STPS340UY en.CD00270569.pdf
STPS340UY
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 7761 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.11 EUR
31+0.69 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
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STPSC10H065B-TR en.DM00063471.pdf
STPSC10H065B-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
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STPSC10H065G-TR en.DM00063471.pdf
STPSC10H065G-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
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STPSC4H065B-TR en.DM00063407.pdf
STPSC4H065B-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
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STPSC8H065B-TR en.DM00063470.pdf
STPSC8H065B-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.93 EUR
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STPSC8H065G-TR en.DM00063470.pdf
STPSC8H065G-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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STPSC10H065D en.DM00063471.pdf
STPSC10H065D
Hersteller: STMicroelectronics
Description: 650 V 10 A power Schottky silico
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
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STPSC20H065CW en.DM00063472.pdf
STPSC20H065CW
Hersteller: STMicroelectronics
Description: DIODE ARRAY SIC 650V 10A TO-247
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.53 EUR
30+7.75 EUR
Mindestbestellmenge: 2 Stücke
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STPSC8H065D en.DM00063470.pdf
STPSC8H065D
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 650V 8A TO220AC
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
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STPSC10H065G-TR en.DM00063471.pdf
STPSC10H065G-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.88 EUR
10+5.19 EUR
100+3.67 EUR
500+3.34 EUR
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STPSC10H065B-TR en.DM00063471.pdf
STPSC10H065B-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 157 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.47 EUR
10+4.2 EUR
100+2.92 EUR
Mindestbestellmenge: 4 Stücke
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STPSC4H065B-TR en.DM00063407.pdf
STPSC4H065B-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 926 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.33 EUR
10+2.76 EUR
100+2.2 EUR
500+1.86 EUR
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STPSC8H065B-TR en.DM00063470.pdf
STPSC8H065B-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 13528 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.93 EUR
10+3.37 EUR
100+2.74 EUR
500+2.36 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STPSC8H065G-TR en.DM00063470.pdf
STPSC8H065G-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EV-VND5E160AJ en.DM00070774.pdf
EV-VND5E160AJ
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VND5E160AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E160AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EV-VND5T100AJ en.DM00509645.pdf
EV-VND5T100AJ
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VND5T100AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5T100AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EV-VND5E050AJ en.DM00070773.pdf
EV-VND5E050AJ
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR VND5E050AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E050AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+25.32 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EV-VND5E160J en.DM00070777.pdf
EV-VND5E160J
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR VND5E160J
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: VND5E160J
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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