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ESDALCL6-2SC6 ESDALCL6-2SC6 STMicroelectronics en.DM00068844.pdf Description: TVS DIODE 3VWM 17VC SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: Yes
Part Status: Active
auf Bestellung 12000 Stücke:
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3000+0.15 EUR
9000+0.14 EUR
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ESDALCL6-4P6A ESDALCL6-4P6A STMicroelectronics dm00068850.pdf Description: TVS DIODE 3VWM SOT666
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-666
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 90W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 9000 Stücke:
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3000+0.29 EUR
6000+0.26 EUR
9000+0.25 EUR
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FERD30M45CT FERD30M45CT STMicroelectronics en.DM00067216.pdf Description: DIODE ARRAY FERD 45V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
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STN2580 STN2580 STMicroelectronics en.DM00068906.pdf Description: TRANS NPN 400V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.6 W
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ESDALCL5-1BM2 ESDALCL5-1BM2 STMicroelectronics dm00068796.pdf Description: TVS DIODE 3VWM SOD882
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 26pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOD-882
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
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50+0.42 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.18 EUR
2000+0.15 EUR
5000+0.13 EUR
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ESDALCL6-2SC6 ESDALCL6-2SC6 STMicroelectronics en.DM00068844.pdf Description: TVS DIODE 3VWM 17VC SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: Yes
Part Status: Active
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38+0.57 EUR
65+0.32 EUR
100+0.24 EUR
500+0.21 EUR
1000+0.18 EUR
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ESDALCL6-4P6A ESDALCL6-4P6A STMicroelectronics dm00068850.pdf Description: TVS DIODE 3VWM SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-666
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 90W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 9447 Stücke:
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28+0.76 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.33 EUR
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STL57N65M5 STL57N65M5 STMicroelectronics en.DM00051569.pdf Description: MOSFET N-CH 650V 4.3A 8POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 189W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 5034 Stücke:
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10+16.03 EUR
50+13.03 EUR
100+12.84 EUR
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STL57N65M5 STL57N65M5 STMicroelectronics en.DM00051569.pdf Description: MOSFET N-CH 650V 4.3A 8POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 189W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
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3000+10.5 EUR
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STM3240G-JAVA STMicroelectronics en.DM00072102.pdf Description: STM32F407IGH6 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F407IGH6
Part Status: Obsolete
Produkt ist nicht verfügbar
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STM32-JAVA STM32-JAVA STMicroelectronics STM32-JAVA.pdf Description: KIT EVAL FOR STM32 JAVA
Packaging: Bulk
For Use With/Related Products: STM32
Type: Integrated Development Environment (IDE)
Produkt ist nicht verfügbar
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STM32F4DIS-BB STM32F4DIS-BB STMicroelectronics en.DM00072107.pdf Description: BOARD BASE STM32F4 DISCOVERY
Utilized IC / Part: STM32 F4 Series
Part Status: Obsolete
Accessory Type: Interface Board
For Use With/Related Products: STM32 F4 Series
Packaging: Bulk
Produkt ist nicht verfügbar
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STM32F4DIS-CAM STM32F4DIS-CAM STMicroelectronics en.DM00072107.pdf Description: BOARD CAMERA STM32F4 DISCOVERY
Part Status: Obsolete
Accessory Type: Camera
For Use With/Related Products: STM32
Packaging: Bulk
Utilized IC / Part: STM32
Produkt ist nicht verfügbar
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STM32F4DIS-LCD STM32F4DIS-LCD STMicroelectronics en.DM00072107.pdf Description: BOARD LCD STM32F4 DISCOVERY
Part Status: Obsolete
Accessory Type: LCD Display
For Use With/Related Products: STM32
Packaging: Bulk
Utilized IC / Part: STM32
Produkt ist nicht verfügbar
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STP100N10F7 STP100N10F7 STMicroelectronics en.DM00066568.pdf Description: MOSFET N CH 100V 80A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
auf Bestellung 1160 Stücke:
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4+5.28 EUR
10+3.4 EUR
50+2.59 EUR
100+2.33 EUR
500+1.88 EUR
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STP77N6F6 STP77N6F6 STMicroelectronics STP77N6F6.pdf Description: MOSFET N-CH 60V 77A TO220
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 38.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1566 Stücke:
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7+3.2 EUR
10+2.63 EUR
100+2.05 EUR
500+1.74 EUR
1000+1.42 EUR
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STD100N10F7 STD100N10F7 STMicroelectronics en.DM00066568.pdf Description: MOSFET N CH 100V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
auf Bestellung 8570 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.63 EUR
10+3.64 EUR
50+2.8 EUR
100+2.51 EUR
500+2.03 EUR
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STD100N10F7 STD100N10F7 STMicroelectronics en.DM00066568.pdf Description: MOSFET N CH 100V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
auf Bestellung 7500 Stücke:
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2500+1.71 EUR
7500+1.59 EUR
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STH110N10F7-2 STH110N10F7-2 STMicroelectronics STH110N10F7-2%2C-6.pdf Description: MOSFET N CH 100V 110A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
Produkt ist nicht verfügbar
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STP110N10F7 STP110N10F7 STMicroelectronics en.DM00072347.pdf Description: MOSFET N CH 100V 110A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
auf Bestellung 677 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.39 EUR
10+4.16 EUR
50+3.2 EUR
100+2.89 EUR
500+2.34 EUR
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STP110N55F6 STP110N55F6 STMicroelectronics 497_STP110N55F6.pdf Description: MOSFET N-CH 55V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8350 pF @ 25 V
Produkt ist nicht verfügbar
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STP80N70F6 STP80N70F6 STMicroelectronics STP80N70F6.pdf Description: MOSFET N-CH 68V 96A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 68 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
Produkt ist nicht verfügbar
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STEVAL-MKI127V1 STEVAL-MKI127V1 STMicroelectronics en.DM00067127.pdf Description: BOARD EVAL FOR L3GD20
Packaging: Box
Sensitivity: 70m°/s, 17.5m°/s, 8.75m°/s
Interface: I2C, Serial, SPI
Sensor Type: Gyroscope, 3 Axis
Utilized IC / Part: L3GD20
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±250°/sec, ±500°/sec, ±2000°/sec
Part Status: Active
Produkt ist nicht verfügbar
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STP24N60M2 STP24N60M2 STMicroelectronics en.DM00070788.pdf Description: MOSFET N-CH 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
auf Bestellung 981 Stücke:
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3+7.14 EUR
10+4.68 EUR
50+3.62 EUR
100+3.27 EUR
500+2.67 EUR
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STEVAL-ILD004V1 STEVAL-ILD004V1 STMicroelectronics en.CD00226640.pdf Description: BOARD EVAL FOR TS820
Produkt ist nicht verfügbar
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STC3115IJT STC3115IJT STMicroelectronics en.DM00066800.pdf Description: IC BATT GAS GAUGE LI-ION 10CSP
Packaging: Cut Tape (CT)
Package / Case: 10-WFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-CSP (1.4x2.04)
Part Status: Active
auf Bestellung 7821 Stücke:
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6+3.71 EUR
10+2.71 EUR
25+2.48 EUR
100+2.2 EUR
250+2.07 EUR
500+2 EUR
1000+1.93 EUR
2500+1.87 EUR
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STC3115IJT STC3115IJT STMicroelectronics en.DM00066800.pdf Description: IC BATT GAS GAUGE LI-ION 10CSP
Packaging: Tape & Reel (TR)
Package / Case: 10-WFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-CSP (1.4x2.04)
Part Status: Active
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5000+1.82 EUR
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SPC560D40L1C4E0X SPC560D40L1C4E0X STMicroelectronics en.CD00249891.pdf Description: IC MCU 32BIT 256KB FLASH 64LQFP
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 45
Grade: Automotive
Supplier Device Package: 64-LQFP (10x10)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: e200z0h
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 16K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SPC560P40L1CEFAR SPC560P40L1CEFAR STMicroelectronics en.CD00244344.pdf Description: IC MCU 32BIT 256KB FLASH 64LQFP
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 20K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 64MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 37
Grade: Automotive
Supplier Device Package: 64-LQFP (10x10)
Peripherals: DMA, POR, PWM, WDT
Connectivity: CANbus, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b
Core Processor: e200z0h
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SPC560B64L7C6E0X SPC560B64L7C6E0X STMicroelectronics en.CD00215422.pdf Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
RAM Size: 96K x 8
Program Memory Size: 1.5MB (1.5M x 8)
Speed: 64MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 53x10/12b
Core Processor: e200z0h
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
DigiKey Programmable: Not Verified
Number of I/O: 149
Supplier Device Package: 176-LQFP (24x24)
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SPC560B60L5C6E0X SPC560B60L5C6E0X STMicroelectronics en.CD00215422.pdf Description: IC MCU 32BIT 1MB FLASH 144LQFP
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 121
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 53x10/12b
Core Processor: e200z0h
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 80K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 64MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tape & Reel (TR)
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SPC560B64L5C6E0X SPC560B64L5C6E0X STMicroelectronics en.CD00215422.pdf Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 53x10/12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Grade: Automotive
Number of I/O: 121
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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SPC56EL60L5CBFSY SPC56EL60L5CBFSY STMicroelectronics CD00227070.pdf Description: IC MCU 32BIT 1MB FLASH 144LQFP
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SPC5-HTCOMP-NLTL SPC5-HTCOMP-NLTL STMicroelectronics Description: HIGHTEC COMPILER FOR SPC56
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SPC560D40L1C4E0X SPC560D40L1C4E0X STMicroelectronics en.CD00249891.pdf Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Grade: Automotive
Number of I/O: 45
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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SPC560P40L1CEFAR SPC560P40L1CEFAR STMicroelectronics en.CD00244344.pdf Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 16x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Grade: Automotive
Number of I/O: 37
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SPC56EL70L5CBFR SPC56EL70L5CBFR STMicroelectronics en.DM00070691.pdf Description: IC MCU 32BIT 2MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z4d
Data Converters: A/D 32x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 3.63V
Connectivity: CANbus, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Grade: Automotive
Number of I/O: 96
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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STEVAL-MKI129V3 STEVAL-MKI129V3 STMicroelectronics en.DM00078315.pdf Description: COUPON BOARD MP34DT01
Contents: Board(s)
Part Status: Obsolete
Primary Attributes: Digital Output
Supplied Contents: Board(s)
Utilized IC / Part: MP34DT01
Type: Audio
Function: Microphone
Packaging: Bulk
Produkt ist nicht verfügbar
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STEVAL-SPBT2ATV3 STEVAL-SPBT2ATV3 STMicroelectronics en.DM00056231.pdf Description: BOARD EVAL FOR SPBT2532C2.AT2
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STEVAL-MKI129V2 STEVAL-MKI129V2 STMicroelectronics audio-ic-eval-boards.html Description: BOARD EVAL FOR MP34DB01
Part Status: Obsolete
Primary Attributes: Digital Output
Supplied Contents: Board(s)
Utilized IC / Part: MP34DB01
Type: Audio
Function: MEMS Omnidirectional Microphones
Packaging: Bulk
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STEVAL-MKI129V1 STEVAL-MKI129V1 STMicroelectronics en.DM00072699.pdf Description: COUPON BOARD MP45DT02
Packaging: Bulk
Function: Microphone
Type: Audio
Contents: Board(s)
Utilized IC / Part: MP45DT02
Supplied Contents: Board(s)
Primary Attributes: Digital Output
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STP105N3LL STP105N3LL STMicroelectronics STP105N3LL.pdf Description: MOSFET N-CH 30V 80A TO220
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
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STT6N3LLH6 STT6N3LLH6 STMicroelectronics STT6N3LLH6.pdf Description: MOSFET N-CH 30V 6A SOT23-6
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
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STT6N3LLH6 STT6N3LLH6 STMicroelectronics STT6N3LLH6.pdf Description: MOSFET N-CH 30V 6A SOT23-6
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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STH310N10F7-2 STH310N10F7-2 STMicroelectronics en.DM00072096.pdf Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
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STH310N10F7-2 STH310N10F7-2 STMicroelectronics en.DM00072096.pdf Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
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STTH30S06W STTH30S06W STMicroelectronics 600v-ultrafast-rectifiers.html Description: DIODE STANDARD 600V 30A
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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STU6N65K3 STU6N65K3 STMicroelectronics en.CD00297329.pdf Description: MOSFET N-CH 650V 5.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
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STW46NF30 STW46NF30 STMicroelectronics en.DM00022942.pdf Description: MOSFET N-CH 300V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
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STWA45N65M5 STWA45N65M5 STMicroelectronics en.DM00072250.pdf Description: MOSFET N-CH 650V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
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STB24N60M2 STB24N60M2 STMicroelectronics en.DM00070788.pdf Description: MOSFET N-CH 600V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
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STD80N4F6 STD80N4F6 STMicroelectronics STD80N4F6.pdf Description: MOSFET N-CH 40V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Qualification: AEC-Q101
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STGF30H60DF STGF30H60DF STMicroelectronics en.DM00040343.pdf Description: IGBT TRENCH FS 600V 60A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 37 W
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STGP20H60DF STGP20H60DF STMicroelectronics en.DM00066598.pdf Description: IGBT TRENCH FS 600V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42.5ns/177ns
Switching Energy: 209µJ (on), 261µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
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5+4.27 EUR
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100+1.88 EUR
500+1.51 EUR
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STGP30H60DF STGP30H60DF STMicroelectronics en.DM00040343.pdf Description: IGBT TRENCH FS 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
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STGP35HF60W STGP35HF60W STMicroelectronics Description: IGBT 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 30ns/175ns
Switching Energy: 290µJ (on), 185µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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STP240N10F7 STP240N10F7 STMicroelectronics en.DM00070204.pdf Description: MOSFET N-CH 100V 180A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
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STP7N80K5 STP7N80K5 STMicroelectronics en.DM00060222.pdf Description: MOSFET N-CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
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4+5.95 EUR
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STP9NM40N STP9NM40N STMicroelectronics en.DM00067012.pdf Description: MOSFET N-CH 400V 5.6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V
Produkt ist nicht verfügbar
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LET9070CB LET9070CB STMicroelectronics en.DM00067622.pdf Description: RF MOSFET LDMOS 28V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 12A
Frequency: 945MHz
Power - Output: 80W
Gain: 16dB
Technology: LDMOS
Supplier Device Package: M243
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 400 mA
Produkt ist nicht verfügbar
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ESDALCL6-2SC6 en.DM00068844.pdf
ESDALCL6-2SC6
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 17VC SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: Yes
Part Status: Active
auf Bestellung 12000 Stücke:
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3000+0.15 EUR
9000+0.14 EUR
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ESDALCL6-4P6A dm00068850.pdf
ESDALCL6-4P6A
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM SOT666
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-666
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 90W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 9000 Stücke:
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AnzahlPrivatkunde
3000+0.29 EUR
6000+0.26 EUR
9000+0.25 EUR
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FERD30M45CT en.DM00067216.pdf
FERD30M45CT
Hersteller: STMicroelectronics
Description: DIODE ARRAY FERD 45V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
auf Bestellung 659 Stücke:
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15+1.46 EUR
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STN2580 en.DM00068906.pdf
STN2580
Hersteller: STMicroelectronics
Description: TRANS NPN 400V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.6 W
auf Bestellung 12137 Stücke:
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15+1.49 EUR
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ESDALCL5-1BM2 dm00068796.pdf
ESDALCL5-1BM2
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM SOD882
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 26pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOD-882
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
auf Bestellung 32575 Stücke:
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31+0.69 EUR
50+0.42 EUR
100+0.26 EUR
500+0.2 EUR
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2000+0.15 EUR
5000+0.13 EUR
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ESDALCL6-2SC6 en.DM00068844.pdf
ESDALCL6-2SC6
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 17VC SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: Yes
Part Status: Active
auf Bestellung 12870 Stücke:
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38+0.57 EUR
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100+0.24 EUR
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ESDALCL6-4P6A dm00068850.pdf
ESDALCL6-4P6A
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-666
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 90W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 9447 Stücke:
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AnzahlPrivatkunde
17+1.24 EUR
28+0.76 EUR
100+0.49 EUR
500+0.37 EUR
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STL57N65M5 en.DM00051569.pdf
STL57N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 4.3A 8POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 189W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 5034 Stücke:
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AnzahlPrivatkunde
1+23.06 EUR
10+16.03 EUR
50+13.03 EUR
100+12.84 EUR
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STL57N65M5 en.DM00051569.pdf
STL57N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 4.3A 8POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 189W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+10.5 EUR
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STM3240G-JAVA en.DM00072102.pdf
Hersteller: STMicroelectronics
Description: STM32F407IGH6 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F407IGH6
Part Status: Obsolete
Produkt ist nicht verfügbar
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STM32-JAVA STM32-JAVA.pdf
STM32-JAVA
Hersteller: STMicroelectronics
Description: KIT EVAL FOR STM32 JAVA
Packaging: Bulk
For Use With/Related Products: STM32
Type: Integrated Development Environment (IDE)
Produkt ist nicht verfügbar
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STM32F4DIS-BB en.DM00072107.pdf
STM32F4DIS-BB
Hersteller: STMicroelectronics
Description: BOARD BASE STM32F4 DISCOVERY
Utilized IC / Part: STM32 F4 Series
Part Status: Obsolete
Accessory Type: Interface Board
For Use With/Related Products: STM32 F4 Series
Packaging: Bulk
Produkt ist nicht verfügbar
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STM32F4DIS-CAM en.DM00072107.pdf
STM32F4DIS-CAM
Hersteller: STMicroelectronics
Description: BOARD CAMERA STM32F4 DISCOVERY
Part Status: Obsolete
Accessory Type: Camera
For Use With/Related Products: STM32
Packaging: Bulk
Utilized IC / Part: STM32
Produkt ist nicht verfügbar
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STM32F4DIS-LCD en.DM00072107.pdf
STM32F4DIS-LCD
Hersteller: STMicroelectronics
Description: BOARD LCD STM32F4 DISCOVERY
Part Status: Obsolete
Accessory Type: LCD Display
For Use With/Related Products: STM32
Packaging: Bulk
Utilized IC / Part: STM32
Produkt ist nicht verfügbar
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STP100N10F7 en.DM00066568.pdf
STP100N10F7
Hersteller: STMicroelectronics
Description: MOSFET N CH 100V 80A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
auf Bestellung 1160 Stücke:
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4+5.28 EUR
10+3.4 EUR
50+2.59 EUR
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STP77N6F6 STP77N6F6.pdf
STP77N6F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 77A TO220
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 38.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1566 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.2 EUR
10+2.63 EUR
100+2.05 EUR
500+1.74 EUR
1000+1.42 EUR
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STD100N10F7 en.DM00066568.pdf
STD100N10F7
Hersteller: STMicroelectronics
Description: MOSFET N CH 100V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
auf Bestellung 8570 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.63 EUR
10+3.64 EUR
50+2.8 EUR
100+2.51 EUR
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STD100N10F7 en.DM00066568.pdf
STD100N10F7
Hersteller: STMicroelectronics
Description: MOSFET N CH 100V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
auf Bestellung 7500 Stücke:
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AnzahlPrivatkunde
2500+1.71 EUR
7500+1.59 EUR
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STH110N10F7-2 STH110N10F7-2%2C-6.pdf
STH110N10F7-2
Hersteller: STMicroelectronics
Description: MOSFET N CH 100V 110A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
Produkt ist nicht verfügbar
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STP110N10F7 en.DM00072347.pdf
STP110N10F7
Hersteller: STMicroelectronics
Description: MOSFET N CH 100V 110A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
auf Bestellung 677 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.39 EUR
10+4.16 EUR
50+3.2 EUR
100+2.89 EUR
500+2.34 EUR
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STP110N55F6 497_STP110N55F6.pdf
STP110N55F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 55V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8350 pF @ 25 V
Produkt ist nicht verfügbar
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STP80N70F6 STP80N70F6.pdf
STP80N70F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 68V 96A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 68 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
Produkt ist nicht verfügbar
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STEVAL-MKI127V1 en.DM00067127.pdf
STEVAL-MKI127V1
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR L3GD20
Packaging: Box
Sensitivity: 70m°/s, 17.5m°/s, 8.75m°/s
Interface: I2C, Serial, SPI
Sensor Type: Gyroscope, 3 Axis
Utilized IC / Part: L3GD20
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±250°/sec, ±500°/sec, ±2000°/sec
Part Status: Active
Produkt ist nicht verfügbar
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STP24N60M2 en.DM00070788.pdf
STP24N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
auf Bestellung 981 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.14 EUR
10+4.68 EUR
50+3.62 EUR
100+3.27 EUR
500+2.67 EUR
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STEVAL-ILD004V1 en.CD00226640.pdf
STEVAL-ILD004V1
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR TS820
Produkt ist nicht verfügbar
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STC3115IJT en.DM00066800.pdf
STC3115IJT
Hersteller: STMicroelectronics
Description: IC BATT GAS GAUGE LI-ION 10CSP
Packaging: Cut Tape (CT)
Package / Case: 10-WFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-CSP (1.4x2.04)
Part Status: Active
auf Bestellung 7821 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.71 EUR
10+2.71 EUR
25+2.48 EUR
100+2.2 EUR
250+2.07 EUR
500+2 EUR
1000+1.93 EUR
2500+1.87 EUR
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STC3115IJT en.DM00066800.pdf
STC3115IJT
Hersteller: STMicroelectronics
Description: IC BATT GAS GAUGE LI-ION 10CSP
Packaging: Tape & Reel (TR)
Package / Case: 10-WFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-CSP (1.4x2.04)
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.82 EUR
Mindestbestellmenge: 5000 Stücke
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SPC560D40L1C4E0X en.CD00249891.pdf
SPC560D40L1C4E0X
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 45
Grade: Automotive
Supplier Device Package: 64-LQFP (10x10)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: e200z0h
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 16K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SPC560P40L1CEFAR en.CD00244344.pdf
SPC560P40L1CEFAR
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 20K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 64MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 37
Grade: Automotive
Supplier Device Package: 64-LQFP (10x10)
Peripherals: DMA, POR, PWM, WDT
Connectivity: CANbus, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b
Core Processor: e200z0h
Produkt ist nicht verfügbar
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SPC560B64L7C6E0X en.CD00215422.pdf
SPC560B64L7C6E0X
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
RAM Size: 96K x 8
Program Memory Size: 1.5MB (1.5M x 8)
Speed: 64MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 53x10/12b
Core Processor: e200z0h
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
DigiKey Programmable: Not Verified
Number of I/O: 149
Supplier Device Package: 176-LQFP (24x24)
Produkt ist nicht verfügbar
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SPC560B60L5C6E0X en.CD00215422.pdf
SPC560B60L5C6E0X
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 121
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 53x10/12b
Core Processor: e200z0h
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 80K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 64MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SPC560B64L5C6E0X en.CD00215422.pdf
SPC560B64L5C6E0X
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 53x10/12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Grade: Automotive
Number of I/O: 121
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SPC56EL60L5CBFSY CD00227070.pdf
SPC56EL60L5CBFSY
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Produkt ist nicht verfügbar
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SPC5-HTCOMP-NLTL
SPC5-HTCOMP-NLTL
Hersteller: STMicroelectronics
Description: HIGHTEC COMPILER FOR SPC56
Produkt ist nicht verfügbar
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SPC560D40L1C4E0X en.CD00249891.pdf
SPC560D40L1C4E0X
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Grade: Automotive
Number of I/O: 45
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SPC560P40L1CEFAR en.CD00244344.pdf
SPC560P40L1CEFAR
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 16x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Grade: Automotive
Number of I/O: 37
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SPC56EL70L5CBFR en.DM00070691.pdf
SPC56EL70L5CBFR
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z4d
Data Converters: A/D 32x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 3.63V
Connectivity: CANbus, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Grade: Automotive
Number of I/O: 96
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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STEVAL-MKI129V3 en.DM00078315.pdf
STEVAL-MKI129V3
Hersteller: STMicroelectronics
Description: COUPON BOARD MP34DT01
Contents: Board(s)
Part Status: Obsolete
Primary Attributes: Digital Output
Supplied Contents: Board(s)
Utilized IC / Part: MP34DT01
Type: Audio
Function: Microphone
Packaging: Bulk
Produkt ist nicht verfügbar
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STEVAL-SPBT2ATV3 en.DM00056231.pdf
STEVAL-SPBT2ATV3
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR SPBT2532C2.AT2
Produkt ist nicht verfügbar
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STEVAL-MKI129V2 audio-ic-eval-boards.html
STEVAL-MKI129V2
Hersteller: STMicroelectronics
Description: BOARD EVAL FOR MP34DB01
Part Status: Obsolete
Primary Attributes: Digital Output
Supplied Contents: Board(s)
Utilized IC / Part: MP34DB01
Type: Audio
Function: MEMS Omnidirectional Microphones
Packaging: Bulk
Produkt ist nicht verfügbar
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STEVAL-MKI129V1 en.DM00072699.pdf
STEVAL-MKI129V1
Hersteller: STMicroelectronics
Description: COUPON BOARD MP45DT02
Packaging: Bulk
Function: Microphone
Type: Audio
Contents: Board(s)
Utilized IC / Part: MP45DT02
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Produkt ist nicht verfügbar
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STP105N3LL STP105N3LL.pdf
STP105N3LL
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 80A TO220
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.17 EUR
11+2 EUR
50+1.5 EUR
Mindestbestellmenge: 7 Stücke
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STT6N3LLH6 STT6N3LLH6.pdf
STT6N3LLH6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 6A SOT23-6
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 12170 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.43 EUR
24+0.88 EUR
50+0.64 EUR
100+0.57 EUR
500+0.43 EUR
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STT6N3LLH6 STT6N3LLH6.pdf
STT6N3LLH6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 6A SOT23-6
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.33 EUR
9000+0.29 EUR
Mindestbestellmenge: 3000 Stücke
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STH310N10F7-2 en.DM00072096.pdf
STH310N10F7-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Produkt ist nicht verfügbar
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STH310N10F7-2 en.DM00072096.pdf
STH310N10F7-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.07 EUR
10+8.09 EUR
50+6.39 EUR
100+5.84 EUR
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STTH30S06W 600v-ultrafast-rectifiers.html
STTH30S06W
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 30A
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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STU6N65K3 en.CD00297329.pdf
STU6N65K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 5.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Produkt ist nicht verfügbar
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STW46NF30 en.DM00022942.pdf
STW46NF30
Hersteller: STMicroelectronics
Description: MOSFET N-CH 300V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 1030 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.71 EUR
30+4.26 EUR
120+3.5 EUR
510+2.94 EUR
1020+2.74 EUR
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STWA45N65M5 en.DM00072250.pdf
STWA45N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Produkt ist nicht verfügbar
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STB24N60M2 en.DM00070788.pdf
STB24N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
auf Bestellung 310 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.78 EUR
10+4.43 EUR
50+3.42 EUR
100+3.09 EUR
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STD80N4F6 STD80N4F6.pdf
STD80N4F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4434 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.82 EUR
10+3.09 EUR
50+2.36 EUR
100+2.12 EUR
500+1.7 EUR
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STGF30H60DF en.DM00040343.pdf
STGF30H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 37 W
Produkt ist nicht verfügbar
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STGP20H60DF en.DM00066598.pdf
STGP20H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42.5ns/177ns
Switching Energy: 209µJ (on), 261µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
auf Bestellung 746 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.27 EUR
50+2.09 EUR
100+1.88 EUR
500+1.51 EUR
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STGP30H60DF en.DM00040343.pdf
STGP30H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Produkt ist nicht verfügbar
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STGP35HF60W
STGP35HF60W
Hersteller: STMicroelectronics
Description: IGBT 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 30ns/175ns
Switching Energy: 290µJ (on), 185µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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STP240N10F7 en.DM00070204.pdf
STP240N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
auf Bestellung 8460 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.26 EUR
10+6.81 EUR
50+5.33 EUR
100+4.86 EUR
500+4.02 EUR
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STP7N80K5 en.DM00060222.pdf
STP7N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.95 EUR
10+3.86 EUR
Mindestbestellmenge: 4 Stücke
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STP9NM40N en.DM00067012.pdf
STP9NM40N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 400V 5.6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V
Produkt ist nicht verfügbar
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LET9070CB en.DM00067622.pdf
LET9070CB
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS 28V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 12A
Frequency: 945MHz
Power - Output: 80W
Gain: 16dB
Technology: LDMOS
Supplier Device Package: M243
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 400 mA
Produkt ist nicht verfügbar
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