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LM2904AYPT LM2904AYPT STMicroelectronics en.CD00000535.pdf Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Single-Ended
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 700µA
Slew Rate: 0.6V/µs
Gain Bandwidth Product: 1.1 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-TSSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
Qualification: AEC-Q100
auf Bestellung 5115 Stücke:
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LMV324LIPT LMV324LIPT STMicroelectronics en.DM00052423.pdf Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x4 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
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LMV358LIST LMV358LIST STMicroelectronics en.DM00052423.pdf Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x2 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-MiniSO
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
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LMV358LIDT LMV358LIDT STMicroelectronics en.DM00052423.pdf Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x2 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
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LMV321LICT LMV321LICT STMicroelectronics en.DM00052423.pdf Description: IC OPAMP GP 1 CIRCUIT SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: SC-70-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
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LMV321LILT LMV321LILT STMicroelectronics en.DM00052423.pdf Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
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LMV324LIDT LMV324LIDT STMicroelectronics en.DM00052423.pdf Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x4 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
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LED7708TR LED7708TR STMicroelectronics en.DM00046821.pdf Description: IC LED DRVR CTRLR PWM 48VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 36V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 250kHz ~ 1MHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Backlight
Current - Output / Channel: 85mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 48-VFQFPN (7x7)
Dimming: PWM
Voltage - Supply (Min): 3.6V
Voltage - Supply (Max): 36V
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STB155N3H6 STB155N3H6 STMicroelectronics en.DM00028021.pdf Description: MOSFET N-CH 30V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
Produkt ist nicht verfügbar
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LBP01-0810B LBP01-0810B STMicroelectronics dm00051031.pdf Description: LIGHT PROTECT LED SHUNT 15V SMD
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Voltage: 15V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: SMB
Part Status: Active
Number of Circuits: 1
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STB18N65M5 STB18N65M5 STMicroelectronics stb18n65m5.pdf Description: MOSFET N-CH 650V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
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STB31N65M5 STB31N65M5 STMicroelectronics en.DM00049148.pdf Description: MOSFET N-CH 650V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 100 V
Produkt ist nicht verfügbar
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STB34N65M5 STB34N65M5 STMicroelectronics en.DM00049181.pdf Description: MOSFET N-CH 650V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Produkt ist nicht verfügbar
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STB38N65M5 STB38N65M5 STMicroelectronics en.DM00049157.pdf Description: MOSFET N-CH 650V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
Produkt ist nicht verfügbar
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STB57N65M5 STB57N65M5 STMicroelectronics en.DM00049152.pdf Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
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STD18N65M5 STD18N65M5 STMicroelectronics stb18n65m5.pdf Description: MOSFET N-CH 650V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Produkt ist nicht verfügbar
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STD3NM60N STD3NM60N STMicroelectronics en.DM00052307.pdf Description: MOSFET N-CH 600V 3.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 50 V
Produkt ist nicht verfügbar
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STD8NF25 STD8NF25 STMicroelectronics en.DM00024719.pdf Description: MOSFET N-CH 250V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 8A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
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2500+0.51 EUR
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STH130N10F3-2 STH130N10F3-2 STMicroelectronics STx%28x%29130N10F3%28-2%29.pdf Description: MOSFET N-CH 100V 120A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 60A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3305 pF @ 25 V
Produkt ist nicht verfügbar
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STPS5L60SY STPS5L60SY STMicroelectronics en.DM00051039.pdf Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Grade: Automotive
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2500+0.39 EUR
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3STL2540 3STL2540 STMicroelectronics DM00035034.pdf Description: TRANS PNP 40V 5A POWERFLAT3
Produkt ist nicht verfügbar
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ESDAVLC6-1BF4 ESDAVLC6-1BF4 STMicroelectronics dm00053258.pdf Description: TVS DIODE 3VWM 0201
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -30°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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LBP01-0803SC5 LBP01-0803SC5 STMicroelectronics dm00051031.pdf Description: LIGHT PROTECT LED SHUNT 15V SMD
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Voltage: 15V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
auf Bestellung 3000 Stücke:
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3000+0.33 EUR
Mindestbestellmenge: 3000
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LET16045C LET16045C STMicroelectronics en.DM00038659.pdf Description: RF MOSFET LDMOS 28V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 9A
Frequency: 1.6GHz
Power - Output: 45W
Gain: 16dB
Technology: LDMOS
Supplier Device Package: M243
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 400 mA
Produkt ist nicht verfügbar
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LET16060C LET16060C STMicroelectronics en.DM00038953.pdf Description: RF MOSFET LDMOS 28V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 12A
Frequency: 1.6GHz
Power - Output: 60W
Gain: 13.8dB
Technology: LDMOS
Supplier Device Package: M243
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 400 mA
Produkt ist nicht verfügbar
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STF15N65M5 STF15N65M5 STMicroelectronics en.DM00049306.pdf Description: MOSFET N-CH 650V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Produkt ist nicht verfügbar
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STF18N65M5 STF18N65M5 STMicroelectronics en.DM00049722.pdf Description: MOSFET N-CH 650V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Produkt ist nicht verfügbar
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STF31N65M5 STF31N65M5 STMicroelectronics en.DM00049148.pdf Description: MOSFET N-CH 650V 22A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
auf Bestellung 1051 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.52 EUR
50+3.9 EUR
100+3.56 EUR
500+2.94 EUR
1000+2.76 EUR
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STF38N65M5 STF38N65M5 STMicroelectronics en.DM00113621.pdf Description: MOSFET N-CH 650V 30A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 1080 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.66 EUR
50+5.14 EUR
100+4.7 EUR
500+3.94 EUR
1000+3.86 EUR
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Im Einkaufswagen  Stück im Wert von  UAH
STF57N65M5 STF57N65M5 STMicroelectronics en.DM00049152.pdf Description: MOSFET N-CH 650V 42A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 1078 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.85 EUR
50+8.24 EUR
100+7.61 EUR
500+6.84 EUR
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STGFW30NC60V STGFW30NC60V STMicroelectronics STGFW30NC60V.pdf Description: IGBT 600V 36A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 31ns/100ns
Switching Energy: 220µJ (on), 330µJ (off)
Test Condition: 390V, 20A, 3.3Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 80 W
Produkt ist nicht verfügbar
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STGW60H65DF STGW60H65DF STMicroelectronics Description: IGBT TRENCH FS 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 67ns/165ns
Switching Energy: 1.5mJ (on), 1.1mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 206 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 360 W
Produkt ist nicht verfügbar
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STI11NM80 STI11NM80 STMicroelectronics en.CD00003205.pdf Description: MOSFET N-CH 800V 11A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Produkt ist nicht verfügbar
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STI57N65M5 STI57N65M5 STMicroelectronics en.DM00049152.pdf Description: MOSFET N-CH 650V 42A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STP11NM65N STP11NM65N STMicroelectronics en.CD00158685.pdf Description: MOSFET N-CH 650V 11A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STP31N65M5 STP31N65M5 STMicroelectronics en.DM00049148.pdf Description: MOSFET N-CH 650V 22A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
auf Bestellung 319 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.02 EUR
50+3.62 EUR
100+3.29 EUR
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STP34N65M5 STP34N65M5 STMicroelectronics en.DM00049181.pdf Description: MOSFET N-CH 650V 28A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Produkt ist nicht verfügbar
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STP38N65M5 STP38N65M5 STMicroelectronics en.DM00049157.pdf Description: MOSFET N-CH 650V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.91 EUR
50+4.7 EUR
100+4.3 EUR
500+3.58 EUR
Mindestbestellmenge: 2
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STPS20M120SR STPS20M120SR STMicroelectronics en.DM00050162.pdf Description: DIODE SCHOTTKY 120V 20A I2PAK
auf Bestellung 761 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.19 EUR
10+2.87 EUR
100+2.3 EUR
500+1.89 EUR
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STPS20SM120SR STPS20SM120SR STMicroelectronics en.DM00050163.pdf Description: DIODE SCHOTTKY 120V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
auf Bestellung 1909 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.78 EUR
10+2.49 EUR
100+1.94 EUR
500+1.61 EUR
1000+1.27 EUR
Mindestbestellmenge: 7
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STPS30M120SR STPS30M120SR STMicroelectronics power-schottky-medium-vf-and-ir.html Description: DIODE SCHOTTKY 120V 30A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
Produkt ist nicht verfügbar
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STPS30SM120SR STPS30SM120SR STMicroelectronics en.DM00050160.pdf Description: DIODE SCHOTTKY 120V 30A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
Produkt ist nicht verfügbar
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STPS40M120CR STPS40M120CR STMicroelectronics en.DM00050153.pdf Description: DIODE ARRAY SCHOT 120V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 20 A
Current - Reverse Leakage @ Vr: 370 µA @ 120 V
Produkt ist nicht verfügbar
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STPS40SM120CR STPS40SM120CR STMicroelectronics en.DM00050154.pdf Description: DIODE ARRAY SCHOTTKY 120V I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 20 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.45 EUR
10+3.11 EUR
100+2.5 EUR
500+2.05 EUR
Mindestbestellmenge: 6
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STPS40SM120CT STPS40SM120CT STMicroelectronics en.DM00050154.pdf Description: DIODE ARRAY SCHOTTKY 120V TO220
auf Bestellung 967 Stücke:
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STW31N65M5 STW31N65M5 STMicroelectronics en.DM00049148.pdf Description: MOSFET N-CH 650V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW34N65M5 STW34N65M5 STMicroelectronics en.DM00049181.pdf Description: MOSFET N-CH 650V 28A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW38N65M5 STW38N65M5 STMicroelectronics en.DM00049157.pdf Description: MOSFET N-CH 650V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 247 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.7 EUR
30+6.78 EUR
120+5.7 EUR
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STW57N65M5 STW57N65M5 STMicroelectronics en.DM00049152.pdf Description: MOSFET N-CH 650V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 443 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.84 EUR
30+10.08 EUR
120+8.59 EUR
Mindestbestellmenge: 2
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LBP01-0810B LBP01-0810B STMicroelectronics dm00051031.pdf Description: LIGHT PROTECT LED SHUNT 15V SMD
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Voltage: 15V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: SMB
Part Status: Active
Number of Circuits: 1
auf Bestellung 5350 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
33+0.55 EUR
36+0.49 EUR
100+0.43 EUR
250+0.4 EUR
500+0.38 EUR
1000+0.36 EUR
Mindestbestellmenge: 23
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STB18N65M5 STB18N65M5 STMicroelectronics stb18n65m5.pdf Description: MOSFET N-CH 650V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 1880 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.44 EUR
10+3.56 EUR
100+2.49 EUR
500+2.18 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STB34N65M5 STB34N65M5 STMicroelectronics en.DM00049181.pdf Description: MOSFET N-CH 650V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
auf Bestellung 500 Stücke:
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STB38N65M5 STB38N65M5 STMicroelectronics en.DM00049157.pdf Description: MOSFET N-CH 650V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 979 Stücke:
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STB57N65M5 STB57N65M5 STMicroelectronics en.DM00049152.pdf Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 5840 Stücke:
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STD18N65M5 STD18N65M5 STMicroelectronics stb18n65m5.pdf Description: MOSFET N-CH 650V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 1461 Stücke:
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STD3NM60N STD3NM60N STMicroelectronics en.DM00052307.pdf Description: MOSFET N-CH 600V 3.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 50 V
Produkt ist nicht verfügbar
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STD8NF25 STD8NF25 STMicroelectronics en.DM00024719.pdf Description: MOSFET N-CH 250V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 8A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3098 Stücke:
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STPS5L60SY STPS5L60SY STMicroelectronics en.DM00051039.pdf Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Grade: Automotive
auf Bestellung 6091 Stücke:
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3STL2540 3STL2540 STMicroelectronics DM00035034.pdf Description: TRANS PNP 40V 5A POWERFLAT3
auf Bestellung 9212 Stücke:
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LBP01-0803SC5 LBP01-0803SC5 STMicroelectronics dm00051031.pdf Description: LIGHT PROTECT LED SHUNT 15V SMD
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Voltage: 15V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
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Lieferzeit 10-14 Tag (e)
24+0.74 EUR
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LM2904AYPT en.CD00000535.pdf
LM2904AYPT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Single-Ended
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 700µA
Slew Rate: 0.6V/µs
Gain Bandwidth Product: 1.1 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-TSSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
Qualification: AEC-Q100
auf Bestellung 5115 Stücke:
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31+0.58 EUR
44+0.41 EUR
49+0.36 EUR
100+0.31 EUR
250+0.29 EUR
500+0.28 EUR
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LMV324LIPT en.DM00052423.pdf
LMV324LIPT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x4 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 2583 Stücke:
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Anzahl Preis
15+1.25 EUR
20+0.9 EUR
25+0.81 EUR
100+0.71 EUR
250+0.66 EUR
500+0.63 EUR
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LMV358LIST en.DM00052423.pdf
LMV358LIST
Hersteller: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x2 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-MiniSO
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 12473 Stücke:
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Anzahl Preis
19+0.97 EUR
26+0.68 EUR
29+0.61 EUR
100+0.54 EUR
250+0.5 EUR
500+0.48 EUR
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LMV358LIDT en.DM00052423.pdf
LMV358LIDT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x2 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 5062 Stücke:
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Anzahl Preis
19+0.95 EUR
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29+0.61 EUR
100+0.53 EUR
250+0.49 EUR
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LMV321LICT en.DM00052423.pdf
LMV321LICT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: SC-70-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 12257 Stücke:
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Anzahl Preis
32+0.56 EUR
46+0.39 EUR
51+0.35 EUR
100+0.3 EUR
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1000+0.25 EUR
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LMV321LILT en.DM00052423.pdf
LMV321LILT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 18726 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
45+0.4 EUR
50+0.36 EUR
100+0.31 EUR
250+0.28 EUR
500+0.27 EUR
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LMV324LIDT en.DM00052423.pdf
LMV324LIDT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA (x4 Channels)
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 2436 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
21+0.87 EUR
25+0.78 EUR
100+0.69 EUR
250+0.64 EUR
500+0.61 EUR
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LED7708TR en.DM00046821.pdf
LED7708TR
Hersteller: STMicroelectronics
Description: IC LED DRVR CTRLR PWM 48VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 36V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 250kHz ~ 1MHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Backlight
Current - Output / Channel: 85mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 48-VFQFPN (7x7)
Dimming: PWM
Voltage - Supply (Min): 3.6V
Voltage - Supply (Max): 36V
auf Bestellung 2469 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.74 EUR
10+5.11 EUR
25+4.7 EUR
100+4.24 EUR
250+4.03 EUR
500+3.9 EUR
1000+3.79 EUR
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STB155N3H6 en.DM00028021.pdf
STB155N3H6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
Produkt ist nicht verfügbar
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LBP01-0810B dm00051031.pdf
LBP01-0810B
Hersteller: STMicroelectronics
Description: LIGHT PROTECT LED SHUNT 15V SMD
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Voltage: 15V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: SMB
Part Status: Active
Number of Circuits: 1
auf Bestellung 5000 Stücke:
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Anzahl Preis
2500+0.35 EUR
5000+0.34 EUR
Mindestbestellmenge: 2500
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STB18N65M5 stb18n65m5.pdf
STB18N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 1000 Stücke:
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Anzahl Preis
1000+1.88 EUR
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STB31N65M5 en.DM00049148.pdf
STB31N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 100 V
Produkt ist nicht verfügbar
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STB34N65M5 en.DM00049181.pdf
STB34N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Produkt ist nicht verfügbar
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STB38N65M5 en.DM00049157.pdf
STB38N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
Produkt ist nicht verfügbar
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STB57N65M5 en.DM00049152.pdf
STB57N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+7.72 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
STD18N65M5 stb18n65m5.pdf
STD18N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Produkt ist nicht verfügbar
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STD3NM60N en.DM00052307.pdf
STD3NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 3.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 50 V
Produkt ist nicht verfügbar
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STD8NF25 en.DM00024719.pdf
STD8NF25
Hersteller: STMicroelectronics
Description: MOSFET N-CH 250V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 8A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.51 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STH130N10F3-2 STx%28x%29130N10F3%28-2%29.pdf
STH130N10F3-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 120A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 60A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3305 pF @ 25 V
Produkt ist nicht verfügbar
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STPS5L60SY en.DM00051039.pdf
STPS5L60SY
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Grade: Automotive
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.39 EUR
5000+0.33 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
3STL2540 DM00035034.pdf
3STL2540
Hersteller: STMicroelectronics
Description: TRANS PNP 40V 5A POWERFLAT3
Produkt ist nicht verfügbar
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ESDAVLC6-1BF4 dm00053258.pdf
ESDAVLC6-1BF4
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 0201
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -30°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LBP01-0803SC5 dm00051031.pdf
LBP01-0803SC5
Hersteller: STMicroelectronics
Description: LIGHT PROTECT LED SHUNT 15V SMD
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Voltage: 15V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.33 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
LET16045C en.DM00038659.pdf
LET16045C
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS 28V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 9A
Frequency: 1.6GHz
Power - Output: 45W
Gain: 16dB
Technology: LDMOS
Supplier Device Package: M243
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 400 mA
Produkt ist nicht verfügbar
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LET16060C en.DM00038953.pdf
LET16060C
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS 28V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 12A
Frequency: 1.6GHz
Power - Output: 60W
Gain: 13.8dB
Technology: LDMOS
Supplier Device Package: M243
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 400 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STF15N65M5 en.DM00049306.pdf
STF15N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Produkt ist nicht verfügbar
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STF18N65M5 en.DM00049722.pdf
STF18N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STF31N65M5 en.DM00049148.pdf
STF31N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 22A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
auf Bestellung 1051 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.52 EUR
50+3.9 EUR
100+3.56 EUR
500+2.94 EUR
1000+2.76 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STF38N65M5 en.DM00113621.pdf
STF38N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 30A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 1080 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.66 EUR
50+5.14 EUR
100+4.7 EUR
500+3.94 EUR
1000+3.86 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STF57N65M5 en.DM00049152.pdf
STF57N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 1078 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.85 EUR
50+8.24 EUR
100+7.61 EUR
500+6.84 EUR
Mindestbestellmenge: 2
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STGFW30NC60V STGFW30NC60V.pdf
STGFW30NC60V
Hersteller: STMicroelectronics
Description: IGBT 600V 36A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 31ns/100ns
Switching Energy: 220µJ (on), 330µJ (off)
Test Condition: 390V, 20A, 3.3Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 80 W
Produkt ist nicht verfügbar
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STGW60H65DF
STGW60H65DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 67ns/165ns
Switching Energy: 1.5mJ (on), 1.1mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 206 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 360 W
Produkt ist nicht verfügbar
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STI11NM80 en.CD00003205.pdf
STI11NM80
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 11A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Produkt ist nicht verfügbar
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STI57N65M5 en.DM00049152.pdf
STI57N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
Produkt ist nicht verfügbar
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STP11NM65N en.CD00158685.pdf
STP11NM65N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Produkt ist nicht verfügbar
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STP31N65M5 en.DM00049148.pdf
STP31N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 22A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
auf Bestellung 319 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.02 EUR
50+3.62 EUR
100+3.29 EUR
Mindestbestellmenge: 3
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STP34N65M5 en.DM00049181.pdf
STP34N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 28A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Produkt ist nicht verfügbar
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STP38N65M5 en.DM00049157.pdf
STP38N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.91 EUR
50+4.7 EUR
100+4.3 EUR
500+3.58 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STPS20M120SR en.DM00050162.pdf
STPS20M120SR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 120V 20A I2PAK
auf Bestellung 761 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.19 EUR
10+2.87 EUR
100+2.3 EUR
500+1.89 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
STPS20SM120SR en.DM00050163.pdf
STPS20SM120SR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 120V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
auf Bestellung 1909 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.78 EUR
10+2.49 EUR
100+1.94 EUR
500+1.61 EUR
1000+1.27 EUR
Mindestbestellmenge: 7
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STPS30M120SR power-schottky-medium-vf-and-ir.html
STPS30M120SR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 120V 30A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
Produkt ist nicht verfügbar
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STPS30SM120SR en.DM00050160.pdf
STPS30SM120SR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 120V 30A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
Produkt ist nicht verfügbar
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STPS40M120CR en.DM00050153.pdf
STPS40M120CR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOT 120V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 20 A
Current - Reverse Leakage @ Vr: 370 µA @ 120 V
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STPS40SM120CR en.DM00050154.pdf
STPS40SM120CR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 120V I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 20 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
10+3.11 EUR
100+2.5 EUR
500+2.05 EUR
Mindestbestellmenge: 6
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STPS40SM120CT en.DM00050154.pdf
STPS40SM120CT
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 120V TO220
auf Bestellung 967 Stücke:
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STW31N65M5 en.DM00049148.pdf
STW31N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Produkt ist nicht verfügbar
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STW34N65M5 en.DM00049181.pdf
STW34N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 28A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Produkt ist nicht verfügbar
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STW38N65M5 en.DM00049157.pdf
STW38N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 247 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.7 EUR
30+6.78 EUR
120+5.7 EUR
Mindestbestellmenge: 2
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STW57N65M5 en.DM00049152.pdf
STW57N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 443 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.84 EUR
30+10.08 EUR
120+8.59 EUR
Mindestbestellmenge: 2
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LBP01-0810B dm00051031.pdf
LBP01-0810B
Hersteller: STMicroelectronics
Description: LIGHT PROTECT LED SHUNT 15V SMD
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Voltage: 15V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: SMB
Part Status: Active
Number of Circuits: 1
auf Bestellung 5350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
33+0.55 EUR
36+0.49 EUR
100+0.43 EUR
250+0.4 EUR
500+0.38 EUR
1000+0.36 EUR
Mindestbestellmenge: 23
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STB18N65M5 stb18n65m5.pdf
STB18N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 1880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.44 EUR
10+3.56 EUR
100+2.49 EUR
500+2.18 EUR
Mindestbestellmenge: 4
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STB34N65M5 en.DM00049181.pdf
STB34N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.8 EUR
10+6.6 EUR
100+4.82 EUR
Mindestbestellmenge: 2
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STB38N65M5 en.DM00049157.pdf
STB38N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.38 EUR
10+7.01 EUR
100+5.21 EUR
Mindestbestellmenge: 2
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STB57N65M5 en.DM00049152.pdf
STB57N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 5840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.32 EUR
10+11.28 EUR
100+9.45 EUR
Mindestbestellmenge: 2
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STD18N65M5 stb18n65m5.pdf
STD18N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 1461 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.21 EUR
10+3.4 EUR
100+2.37 EUR
500+2.06 EUR
Mindestbestellmenge: 4
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STD3NM60N en.DM00052307.pdf
STD3NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 3.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 50 V
Produkt ist nicht verfügbar
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STD8NF25 en.DM00024719.pdf
STD8NF25
Hersteller: STMicroelectronics
Description: MOSFET N-CH 250V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 8A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3098 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.95 EUR
15+1.23 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.58 EUR
Mindestbestellmenge: 10
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STPS5L60SY en.DM00051039.pdf
STPS5L60SY
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Grade: Automotive
auf Bestellung 6091 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
20+0.91 EUR
100+0.66 EUR
500+0.51 EUR
1000+0.46 EUR
Mindestbestellmenge: 15
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3STL2540 DM00035034.pdf
3STL2540
Hersteller: STMicroelectronics
Description: TRANS PNP 40V 5A POWERFLAT3
auf Bestellung 9212 Stücke:
Lieferzeit 10-14 Tag (e)
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LBP01-0803SC5 dm00051031.pdf
LBP01-0803SC5
Hersteller: STMicroelectronics
Description: LIGHT PROTECT LED SHUNT 15V SMD
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Voltage: 15V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
auf Bestellung 5141 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
34+0.52 EUR
38+0.47 EUR
100+0.4 EUR
250+0.38 EUR
500+0.36 EUR
1000+0.34 EUR
Mindestbestellmenge: 24
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