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STF38N65M5 STF38N65M5 STMicroelectronics en.DM00113621.pdf Description: MOSFET N-CH 650V 30A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 1080 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.66 EUR
50+5.14 EUR
100+4.7 EUR
500+3.94 EUR
1000+3.86 EUR
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STF57N65M5 STF57N65M5 STMicroelectronics en.DM00049152.pdf Description: MOSFET N-CH 650V 42A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 1078 Stücke:
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2+14.92 EUR
50+8.28 EUR
100+7.64 EUR
500+6.87 EUR
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STGFW30NC60V STGFW30NC60V STMicroelectronics STGFW30NC60V.pdf Description: IGBT 600V 36A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 31ns/100ns
Switching Energy: 220µJ (on), 330µJ (off)
Test Condition: 390V, 20A, 3.3Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 80 W
Produkt ist nicht verfügbar
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STGW60H65DF STGW60H65DF STMicroelectronics Description: IGBT TRENCH FS 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 67ns/165ns
Switching Energy: 1.5mJ (on), 1.1mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 206 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 360 W
Produkt ist nicht verfügbar
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STI11NM80 STI11NM80 STMicroelectronics en.CD00003205.pdf Description: MOSFET N-CH 800V 11A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Produkt ist nicht verfügbar
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STI57N65M5 STI57N65M5 STMicroelectronics en.DM00049152.pdf Description: MOSFET N-CH 650V 42A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
Produkt ist nicht verfügbar
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STP11NM65N STP11NM65N STMicroelectronics en.CD00158685.pdf Description: MOSFET N-CH 650V 11A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Produkt ist nicht verfügbar
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STP31N65M5 STP31N65M5 STMicroelectronics en.DM00049148.pdf Description: MOSFET N-CH 650V 22A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
auf Bestellung 319 Stücke:
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3+7.02 EUR
50+3.62 EUR
100+3.29 EUR
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STP34N65M5 STP34N65M5 STMicroelectronics en.DM00049181.pdf Description: MOSFET N-CH 650V 28A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Produkt ist nicht verfügbar
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STP38N65M5 STP38N65M5 STMicroelectronics en.DM00049157.pdf Description: MOSFET N-CH 650V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 998 Stücke:
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2+8.91 EUR
50+4.7 EUR
100+4.3 EUR
500+3.58 EUR
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STPS20M120SR STPS20M120SR STMicroelectronics en.DM00050162.pdf Description: DIODE SCHOTTKY 120V 20A I2PAK
auf Bestellung 761 Stücke:
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6+3.19 EUR
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100+2.3 EUR
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STPS20SM120SR STPS20SM120SR STMicroelectronics en.DM00050163.pdf Description: DIODE SCHOTTKY 120V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
auf Bestellung 1909 Stücke:
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7+2.78 EUR
10+2.49 EUR
100+1.94 EUR
500+1.61 EUR
1000+1.27 EUR
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STPS30M120SR STPS30M120SR STMicroelectronics power-schottky-medium-vf-and-ir.html Description: DIODE SCHOTTKY 120V 30A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
Produkt ist nicht verfügbar
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STPS30SM120SR STPS30SM120SR STMicroelectronics en.DM00050160.pdf Description: DIODE SCHOTTKY 120V 30A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
Produkt ist nicht verfügbar
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STPS40M120CR STPS40M120CR STMicroelectronics en.DM00050153.pdf Description: DIODE ARRAY SCHOT 120V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 20 A
Current - Reverse Leakage @ Vr: 370 µA @ 120 V
Produkt ist nicht verfügbar
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STPS40SM120CR STPS40SM120CR STMicroelectronics en.DM00050154.pdf Description: DIODE ARRAY SCHOTTKY 120V I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 20 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
auf Bestellung 985 Stücke:
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6+3.45 EUR
10+3.11 EUR
100+2.5 EUR
500+2.05 EUR
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STPS40SM120CT STPS40SM120CT STMicroelectronics en.DM00050154.pdf Description: DIODE ARRAY SCHOTTKY 120V TO220
auf Bestellung 967 Stücke:
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STW31N65M5 STW31N65M5 STMicroelectronics en.DM00049148.pdf Description: MOSFET N-CH 650V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Produkt ist nicht verfügbar
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STW34N65M5 STW34N65M5 STMicroelectronics en.DM00049181.pdf Description: MOSFET N-CH 650V 28A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Produkt ist nicht verfügbar
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STW38N65M5 STW38N65M5 STMicroelectronics en.DM00049157.pdf Description: MOSFET N-CH 650V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 247 Stücke:
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2+11.7 EUR
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STW57N65M5 STW57N65M5 STMicroelectronics en.DM00049152.pdf Description: MOSFET N-CH 650V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 443 Stücke:
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2+16.93 EUR
30+10.13 EUR
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LBP01-0810B LBP01-0810B STMicroelectronics dm00051031.pdf Description: LIGHT PROTECT LED SHUNT 15V SMD
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Voltage: 15V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: SMB
Part Status: Active
Number of Circuits: 1
auf Bestellung 5350 Stücke:
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33+0.55 EUR
36+0.49 EUR
100+0.43 EUR
250+0.4 EUR
500+0.38 EUR
1000+0.36 EUR
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STB18N65M5 STB18N65M5 STMicroelectronics stb18n65m5.pdf Description: MOSFET N-CH 650V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 1990 Stücke:
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4+5.44 EUR
10+3.56 EUR
100+2.49 EUR
500+2.18 EUR
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STB34N65M5 STB34N65M5 STMicroelectronics en.DM00049181.pdf Description: MOSFET N-CH 650V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
auf Bestellung 500 Stücke:
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2+9.86 EUR
10+6.63 EUR
100+4.85 EUR
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STB38N65M5 STB38N65M5 STMicroelectronics en.DM00049157.pdf Description: MOSFET N-CH 650V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 979 Stücke:
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2+10.38 EUR
10+7.01 EUR
100+5.21 EUR
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STB57N65M5 STB57N65M5 STMicroelectronics en.DM00049152.pdf Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
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STD18N65M5 STD18N65M5 STMicroelectronics stb18n65m5.pdf Description: MOSFET N-CH 650V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
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STD3NM60N STD3NM60N STMicroelectronics en.DM00052307.pdf Description: MOSFET N-CH 600V 3.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 50 V
Produkt ist nicht verfügbar
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STD8NF25 STD8NF25 STMicroelectronics en.DM00024719.pdf Description: MOSFET N-CH 250V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 8A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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STPS5L60SY STPS5L60SY STMicroelectronics en.DM00051039.pdf Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Grade: Automotive
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3STL2540 3STL2540 STMicroelectronics DM00035034.pdf Description: TRANS PNP 40V 5A POWERFLAT3
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LBP01-0803SC5 LBP01-0803SC5 STMicroelectronics dm00051031.pdf Description: LIGHT PROTECT LED SHUNT 15V SMD
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Voltage: 15V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
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3STL2540 3STL2540 STMicroelectronics DM00035034.pdf Description: TRANS PNP 40V 5A POWERFLAT3
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L78L05ABZ-TR L78L05ABZ-TR STMicroelectronics l78l.pdf Description: IC REG LINEAR 5V 100MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 49dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 6 mA
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61+0.29 EUR
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250+0.23 EUR
500+0.22 EUR
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Q7096718 Q7096718 STMicroelectronics Description: KIT HIGH POWER MOSFET 12VALUES
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Q7096737 Q7096737 STMicroelectronics Description: KIT WIDE INPUT MOSFET 12VALUES
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L6360TR L6360TR STMicroelectronics en.DM00048565.pdf Description: IC TRANSCEIVER 1/1 26VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 26-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 18V ~ 32.5V
Number of Drivers/Receivers: 1/1
Protocol: IO-Link
Part Status: Active
Produkt ist nicht verfügbar
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L6360TR L6360TR STMicroelectronics en.DM00048565.pdf Description: IC TRANSCEIVER 1/1 26VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 26-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 18V ~ 32.5V
Number of Drivers/Receivers: 1/1
Protocol: IO-Link
Part Status: Active
Produkt ist nicht verfügbar
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STPS40M120CTN STPS40M120CTN STMicroelectronics en.DM00050153.pdf Description: DIODE ARR SCHOTT 120V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 20 A
Current - Reverse Leakage @ Vr: 370 µA @ 120 V
Produkt ist nicht verfügbar
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STPS30M120STN STPS30M120STN STMicroelectronics power-schottky-medium-vf-and-ir.html Description: DIODE SCHOTTKY 120V 30A TO220AB
Produkt ist nicht verfügbar
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STPS30SM120STN STPS30SM120STN STMicroelectronics en.DM00050160.pdf Description: DIODE SCHOTTKY 120V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AB Narrow Leads
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
Produkt ist nicht verfügbar
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SPBT2532C2.AT2 SPBT2532C2.AT2 STMicroelectronics SPBT2532C2.AT2_ds.pdf Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Tray
Package / Case: Module
Sensitivity: -85dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 48kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 2dBm
Data Rate: 2Mbps
Protocol: Bluetooth v2.1 +EDR, Class 2
Antenna Type: Antenna Not Included
Utilized IC / Part: STLC2500DB
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
Produkt ist nicht verfügbar
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SPBT2632C2A.AT2 SPBT2632C2A.AT2 STMicroelectronics wireless-transceivers-mcus-and-modules.html Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tray
Package / Case: Module
Sensitivity: -86dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 48kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V
Power - Output: 0dBm
Data Rate: 560kbps
Protocol: Bluetooth v3.1
Current - Receiving: 2.7mA
Current - Transmitting: 11.2mA
Antenna Type: Integrated, Chip
Utilized IC / Part: STLC2690
RF Family/Standard: Bluetooth
Serial Interfaces: UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPBT2632C1A.AT2 SPBT2632C1A.AT2 STMicroelectronics en.DM00050585.pdf Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tray
Package / Case: Module
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 48kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V
Power - Output: 10dBm
Data Rate: 560kbps
Protocol: Bluetooth v3.0
Current - Receiving: 4.2mA
Current - Transmitting: 7mA
Antenna Type: Integrated, Chip
Utilized IC / Part: STLC2690
RF Family/Standard: Bluetooth
Serial Interfaces: UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STF11N65M5 STF11N65M5 STMicroelectronics en.DM00049307.pdf Description: MOSFET N-CH 650V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 100 V
Produkt ist nicht verfügbar
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STL8DN6LF3 STL8DN6LF3 STMicroelectronics en.DM00039155.pdf Description: MOSFET 2N-CH 60V 20A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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STPSC6H065B-TR STPSC6H065B-TR STMicroelectronics en.DM00056349.pdf Description: DIODE SIL CARBIDE 650V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
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2500+1.52 EUR
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STFI34N65M5 STFI34N65M5 STMicroelectronics STF%2CFI34N65M5.pdf Description: MOSFET N CH 650V 28A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Produkt ist nicht verfügbar
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STEVAL-ILL035V1 STEVAL-ILL035V1 STMicroelectronics en.DM00055252.pdf Description: EVAL BOARD FOR LED7708
Packaging: Bulk
Features: Dimmable
Voltage - Input: 10V ~ 28V
Current - Output / Channel: 85mA
Utilized IC / Part: LED7708
Supplied Contents: Board(s)
Outputs and Type: 16, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
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STPSC6H065G-TR STPSC6H065G-TR STMicroelectronics en.DM00056349.pdf Description: DIODE SIL CARBIDE 650V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Produkt ist nicht verfügbar
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STGIPS35K60L1 STGIPS35K60L1 STMicroelectronics STGIPS35K60L1.pdf Description: MODULE IPM SLLIMM SDIP-22L
Packaging: Tube
Package / Case: 22-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 1 Phase
Voltage - Isolation: 2500Vrms
Current: 35 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STTH20L03CG-TR STTH20L03CG-TR STMicroelectronics en.DM00053149.pdf Description: DIODE ARRAY GP 300V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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STGIPS40W60L1 STGIPS40W60L1 STMicroelectronics STGIPS40W60L1.pdf Description: MODULE IPM SLLIMM SDIP-22L
Packaging: Tube
Package / Case: 22-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 1 Phase
Voltage - Isolation: 2500Vrms
Current: 40 A
Voltage: 600 V
Produkt ist nicht verfügbar
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TDA7498ETR TDA7498ETR STMicroelectronics TDA7498E.pdf Description: IC AMP D MONO/STER 220W PWRSSO36
Packaging: Tape & Reel (TR)
Features: Differential Inputs, Mute, Short-Circuit and Thermal Protection, Standby
Package / Case: 36-PowerFSOP (0.295", 7.50mm Width)
Output Type: 1-Channel (Mono) or 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 14V ~ 36V
Max Output Power x Channels @ Load: 220W x 1 @ 3Ohm; 160W x 2 @ 4Ohm
Supplier Device Package: PowerSSO-36 EPU
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+6.07 EUR
Mindestbestellmenge: 1000
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STGW60H65DRF STGW60H65DRF STMicroelectronics en.DM00039960.pdf Description: IGBT TRENCH FS 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 85ns/178ns
Switching Energy: 940µJ (on), 1.06mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 217 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 420 W
Produkt ist nicht verfügbar
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STEVAL-ISA068V1 STEVAL-ISA068V1 STMicroelectronics en.DM00056321.pdf Description: BOARD EVAL BUCK REG ST1S32
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 2.8V ~ 5.5V
Current - Output: 4A
Frequency - Switching: 1.5MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ST1S32
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
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STP11N65M5 STP11N65M5 STMicroelectronics en.DM00049307.pdf Description: MOSFET N-CH 650V 9A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 100 V
Produkt ist nicht verfügbar
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STEVAL-ISA101V1 STEVAL-ISA101V1 STMicroelectronics en.DM00056142.pdf Description: EVAL BOARD FOR L5973D
Packaging: Bulk
Voltage - Output: 1.235V ~ 36V
Voltage - Input: 4V ~ 36V
Current - Output: 2A
Frequency - Switching: 250kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: L5973D
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
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1+64.63 EUR
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STBP110ETDJ6F STBP110ETDJ6F STMicroelectronics STBP110.pdf Description: IC OVP PROTECTION POWERFLAT2X2
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Applications: General Purpose
Technology: Internal Switch
Supplier Device Package: 8-TDFN (2x2)
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
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STTH30W03CW STTH30W03CW STMicroelectronics ultrafast-medium-vf-and-qrr-200v-400v.html Description: DIODE ARRAY GP 300V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
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STF38N65M5 en.DM00113621.pdf
STF38N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 30A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 1080 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.66 EUR
50+5.14 EUR
100+4.7 EUR
500+3.94 EUR
1000+3.86 EUR
Mindestbestellmenge: 2
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STF57N65M5 en.DM00049152.pdf
STF57N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 1078 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.92 EUR
50+8.28 EUR
100+7.64 EUR
500+6.87 EUR
Mindestbestellmenge: 2
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STGFW30NC60V STGFW30NC60V.pdf
STGFW30NC60V
Hersteller: STMicroelectronics
Description: IGBT 600V 36A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 31ns/100ns
Switching Energy: 220µJ (on), 330µJ (off)
Test Condition: 390V, 20A, 3.3Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 80 W
Produkt ist nicht verfügbar
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STGW60H65DF
STGW60H65DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 67ns/165ns
Switching Energy: 1.5mJ (on), 1.1mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 206 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 360 W
Produkt ist nicht verfügbar
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STI11NM80 en.CD00003205.pdf
STI11NM80
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 11A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Produkt ist nicht verfügbar
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STI57N65M5 en.DM00049152.pdf
STI57N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
Produkt ist nicht verfügbar
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STP11NM65N en.CD00158685.pdf
STP11NM65N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Produkt ist nicht verfügbar
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STP31N65M5 en.DM00049148.pdf
STP31N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 22A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
auf Bestellung 319 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.02 EUR
50+3.62 EUR
100+3.29 EUR
Mindestbestellmenge: 3
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STP34N65M5 en.DM00049181.pdf
STP34N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 28A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Produkt ist nicht verfügbar
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STP38N65M5 en.DM00049157.pdf
STP38N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.91 EUR
50+4.7 EUR
100+4.3 EUR
500+3.58 EUR
Mindestbestellmenge: 2
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STPS20M120SR en.DM00050162.pdf
STPS20M120SR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 120V 20A I2PAK
auf Bestellung 761 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.19 EUR
10+2.87 EUR
100+2.3 EUR
500+1.89 EUR
Mindestbestellmenge: 6
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STPS20SM120SR en.DM00050163.pdf
STPS20SM120SR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 120V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
auf Bestellung 1909 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.78 EUR
10+2.49 EUR
100+1.94 EUR
500+1.61 EUR
1000+1.27 EUR
Mindestbestellmenge: 7
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STPS30M120SR power-schottky-medium-vf-and-ir.html
STPS30M120SR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 120V 30A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
Produkt ist nicht verfügbar
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STPS30SM120SR en.DM00050160.pdf
STPS30SM120SR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 120V 30A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
Produkt ist nicht verfügbar
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STPS40M120CR en.DM00050153.pdf
STPS40M120CR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOT 120V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 20 A
Current - Reverse Leakage @ Vr: 370 µA @ 120 V
Produkt ist nicht verfügbar
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STPS40SM120CR en.DM00050154.pdf
STPS40SM120CR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 120V I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 20 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
10+3.11 EUR
100+2.5 EUR
500+2.05 EUR
Mindestbestellmenge: 6
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STPS40SM120CT en.DM00050154.pdf
STPS40SM120CT
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 120V TO220
auf Bestellung 967 Stücke:
Lieferzeit 10-14 Tag (e)
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STW31N65M5 en.DM00049148.pdf
STW31N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Produkt ist nicht verfügbar
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STW34N65M5 en.DM00049181.pdf
STW34N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 28A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Produkt ist nicht verfügbar
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STW38N65M5 en.DM00049157.pdf
STW38N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 247 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.7 EUR
30+6.78 EUR
120+5.7 EUR
Mindestbestellmenge: 2
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STW57N65M5 en.DM00049152.pdf
STW57N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 443 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.93 EUR
30+10.13 EUR
120+8.63 EUR
Mindestbestellmenge: 2
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LBP01-0810B dm00051031.pdf
LBP01-0810B
Hersteller: STMicroelectronics
Description: LIGHT PROTECT LED SHUNT 15V SMD
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Voltage: 15V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: SMB
Part Status: Active
Number of Circuits: 1
auf Bestellung 5350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
33+0.55 EUR
36+0.49 EUR
100+0.43 EUR
250+0.4 EUR
500+0.38 EUR
1000+0.36 EUR
Mindestbestellmenge: 23
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STB18N65M5 stb18n65m5.pdf
STB18N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.44 EUR
10+3.56 EUR
100+2.49 EUR
500+2.18 EUR
Mindestbestellmenge: 4
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STB34N65M5 en.DM00049181.pdf
STB34N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.86 EUR
10+6.63 EUR
100+4.85 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STB38N65M5 en.DM00049157.pdf
STB38N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.38 EUR
10+7.01 EUR
100+5.21 EUR
Mindestbestellmenge: 2
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STB57N65M5 en.DM00049152.pdf
STB57N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 6366 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.39 EUR
10+11.33 EUR
100+9.5 EUR
Mindestbestellmenge: 2
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STD18N65M5 stb18n65m5.pdf
STD18N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 6756 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.21 EUR
10+3.4 EUR
100+2.37 EUR
500+2.06 EUR
Mindestbestellmenge: 4
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STD3NM60N en.DM00052307.pdf
STD3NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 3.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 50 V
Produkt ist nicht verfügbar
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STD8NF25 en.DM00024719.pdf
STD8NF25
Hersteller: STMicroelectronics
Description: MOSFET N-CH 250V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 8A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3098 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.95 EUR
15+1.23 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.58 EUR
Mindestbestellmenge: 10
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STPS5L60SY en.DM00051039.pdf
STPS5L60SY
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Grade: Automotive
auf Bestellung 6091 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
20+0.91 EUR
100+0.66 EUR
500+0.51 EUR
1000+0.46 EUR
Mindestbestellmenge: 15
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3STL2540 DM00035034.pdf
3STL2540
Hersteller: STMicroelectronics
Description: TRANS PNP 40V 5A POWERFLAT3
auf Bestellung 9212 Stücke:
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LBP01-0803SC5 dm00051031.pdf
LBP01-0803SC5
Hersteller: STMicroelectronics
Description: LIGHT PROTECT LED SHUNT 15V SMD
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Voltage: 15V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
auf Bestellung 5141 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
34+0.53 EUR
38+0.47 EUR
100+0.41 EUR
250+0.38 EUR
500+0.36 EUR
1000+0.35 EUR
Mindestbestellmenge: 24
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3STL2540 DM00035034.pdf
3STL2540
Hersteller: STMicroelectronics
Description: TRANS PNP 40V 5A POWERFLAT3
Produkt ist nicht verfügbar
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L78L05ABZ-TR l78l.pdf
L78L05ABZ-TR
Hersteller: STMicroelectronics
Description: IC REG LINEAR 5V 100MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 49dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 6 mA
auf Bestellung 21715 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
55+0.33 EUR
61+0.29 EUR
100+0.25 EUR
250+0.23 EUR
500+0.22 EUR
1000+0.21 EUR
Mindestbestellmenge: 38
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Q7096718
Q7096718
Hersteller: STMicroelectronics
Description: KIT HIGH POWER MOSFET 12VALUES
auf Bestellung 84 Stücke:
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Q7096737
Q7096737
Hersteller: STMicroelectronics
Description: KIT WIDE INPUT MOSFET 12VALUES
auf Bestellung 84 Stücke:
Lieferzeit 10-14 Tag (e)
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L6360TR en.DM00048565.pdf
L6360TR
Hersteller: STMicroelectronics
Description: IC TRANSCEIVER 1/1 26VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 26-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 18V ~ 32.5V
Number of Drivers/Receivers: 1/1
Protocol: IO-Link
Part Status: Active
Produkt ist nicht verfügbar
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L6360TR en.DM00048565.pdf
L6360TR
Hersteller: STMicroelectronics
Description: IC TRANSCEIVER 1/1 26VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 26-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 18V ~ 32.5V
Number of Drivers/Receivers: 1/1
Protocol: IO-Link
Part Status: Active
Produkt ist nicht verfügbar
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STPS40M120CTN en.DM00050153.pdf
STPS40M120CTN
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOTT 120V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 20 A
Current - Reverse Leakage @ Vr: 370 µA @ 120 V
Produkt ist nicht verfügbar
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STPS30M120STN power-schottky-medium-vf-and-ir.html
STPS30M120STN
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 120V 30A TO220AB
Produkt ist nicht verfügbar
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STPS30SM120STN en.DM00050160.pdf
STPS30SM120STN
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 120V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AB Narrow Leads
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
Produkt ist nicht verfügbar
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SPBT2532C2.AT2 SPBT2532C2.AT2_ds.pdf
SPBT2532C2.AT2
Hersteller: STMicroelectronics
Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Tray
Package / Case: Module
Sensitivity: -85dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 48kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 2dBm
Data Rate: 2Mbps
Protocol: Bluetooth v2.1 +EDR, Class 2
Antenna Type: Antenna Not Included
Utilized IC / Part: STLC2500DB
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
Produkt ist nicht verfügbar
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SPBT2632C2A.AT2 wireless-transceivers-mcus-and-modules.html
SPBT2632C2A.AT2
Hersteller: STMicroelectronics
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tray
Package / Case: Module
Sensitivity: -86dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 48kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V
Power - Output: 0dBm
Data Rate: 560kbps
Protocol: Bluetooth v3.1
Current - Receiving: 2.7mA
Current - Transmitting: 11.2mA
Antenna Type: Integrated, Chip
Utilized IC / Part: STLC2690
RF Family/Standard: Bluetooth
Serial Interfaces: UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPBT2632C1A.AT2 en.DM00050585.pdf
SPBT2632C1A.AT2
Hersteller: STMicroelectronics
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tray
Package / Case: Module
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 48kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V
Power - Output: 10dBm
Data Rate: 560kbps
Protocol: Bluetooth v3.0
Current - Receiving: 4.2mA
Current - Transmitting: 7mA
Antenna Type: Integrated, Chip
Utilized IC / Part: STLC2690
RF Family/Standard: Bluetooth
Serial Interfaces: UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STF11N65M5 en.DM00049307.pdf
STF11N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 100 V
Produkt ist nicht verfügbar
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STL8DN6LF3 en.DM00039155.pdf
STL8DN6LF3
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 60V 20A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.35 EUR
Mindestbestellmenge: 3000
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STPSC6H065B-TR en.DM00056349.pdf
STPSC6H065B-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.52 EUR
Mindestbestellmenge: 2500
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STFI34N65M5 STF%2CFI34N65M5.pdf
STFI34N65M5
Hersteller: STMicroelectronics
Description: MOSFET N CH 650V 28A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Produkt ist nicht verfügbar
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STEVAL-ILL035V1 en.DM00055252.pdf
STEVAL-ILL035V1
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR LED7708
Packaging: Bulk
Features: Dimmable
Voltage - Input: 10V ~ 28V
Current - Output / Channel: 85mA
Utilized IC / Part: LED7708
Supplied Contents: Board(s)
Outputs and Type: 16, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
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STPSC6H065G-TR en.DM00056349.pdf
STPSC6H065G-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Produkt ist nicht verfügbar
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STGIPS35K60L1 STGIPS35K60L1.pdf
STGIPS35K60L1
Hersteller: STMicroelectronics
Description: MODULE IPM SLLIMM SDIP-22L
Packaging: Tube
Package / Case: 22-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 1 Phase
Voltage - Isolation: 2500Vrms
Current: 35 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STTH20L03CG-TR en.DM00053149.pdf
STTH20L03CG-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 300V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
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STGIPS40W60L1 STGIPS40W60L1.pdf
STGIPS40W60L1
Hersteller: STMicroelectronics
Description: MODULE IPM SLLIMM SDIP-22L
Packaging: Tube
Package / Case: 22-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 1 Phase
Voltage - Isolation: 2500Vrms
Current: 40 A
Voltage: 600 V
Produkt ist nicht verfügbar
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TDA7498ETR TDA7498E.pdf
TDA7498ETR
Hersteller: STMicroelectronics
Description: IC AMP D MONO/STER 220W PWRSSO36
Packaging: Tape & Reel (TR)
Features: Differential Inputs, Mute, Short-Circuit and Thermal Protection, Standby
Package / Case: 36-PowerFSOP (0.295", 7.50mm Width)
Output Type: 1-Channel (Mono) or 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 14V ~ 36V
Max Output Power x Channels @ Load: 220W x 1 @ 3Ohm; 160W x 2 @ 4Ohm
Supplier Device Package: PowerSSO-36 EPU
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+6.07 EUR
Mindestbestellmenge: 1000
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STGW60H65DRF en.DM00039960.pdf
STGW60H65DRF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 85ns/178ns
Switching Energy: 940µJ (on), 1.06mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 217 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 420 W
Produkt ist nicht verfügbar
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STEVAL-ISA068V1 en.DM00056321.pdf
STEVAL-ISA068V1
Hersteller: STMicroelectronics
Description: BOARD EVAL BUCK REG ST1S32
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 2.8V ~ 5.5V
Current - Output: 4A
Frequency - Switching: 1.5MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ST1S32
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
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STP11N65M5 en.DM00049307.pdf
STP11N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 9A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 100 V
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STEVAL-ISA101V1 en.DM00056142.pdf
STEVAL-ISA101V1
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR L5973D
Packaging: Bulk
Voltage - Output: 1.235V ~ 36V
Voltage - Input: 4V ~ 36V
Current - Output: 2A
Frequency - Switching: 250kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: L5973D
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+64.63 EUR
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STBP110ETDJ6F STBP110.pdf
STBP110ETDJ6F
Hersteller: STMicroelectronics
Description: IC OVP PROTECTION POWERFLAT2X2
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Applications: General Purpose
Technology: Internal Switch
Supplier Device Package: 8-TDFN (2x2)
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
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STTH30W03CW ultrafast-medium-vf-and-qrr-200v-400v.html
STTH30W03CW
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 300V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
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